CN115074830A - Method for prolonging service life of czochralski monocrystalline quartz crucible and crucible structure - Google Patents
Method for prolonging service life of czochralski monocrystalline quartz crucible and crucible structure Download PDFInfo
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- CN115074830A CN115074830A CN202210740026.4A CN202210740026A CN115074830A CN 115074830 A CN115074830 A CN 115074830A CN 202210740026 A CN202210740026 A CN 202210740026A CN 115074830 A CN115074830 A CN 115074830A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 239000010453 quartz Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000006004 Quartz sand Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 74
- 229910002804 graphite Inorganic materials 0.000 claims description 42
- 239000010439 graphite Substances 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000003575 carbonaceous material Substances 0.000 claims description 5
- 239000007770 graphite material Substances 0.000 claims description 5
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 claims description 2
- 229910001863 barium hydroxide Inorganic materials 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 12
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004031 devitrification Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention particularly relates to the technical field of czochralski monocrystalline silicon, and particularly relates to a method for prolonging the service life of a czochralski monocrystalline quartz crucible and a crucible structure. The technical problem to be solved is that the quartz crucible is easy to deform when a plurality of silicon single crystal rods are straightened. The technical scheme is as follows: the crucible structure is characterized in that a gap is reserved between the outer side of the quartz crucible and the inner side of the first crucible, and high-purity quartz sand is filled in the first gap and used for preventing the quartz crucible from reacting with the first crucible on the outer side at high temperature.
Description
Technical Field
The invention belongs to the technical field of czochralski monocrystalline silicon, and particularly relates to a method for prolonging the service life of a czochralski monocrystalline quartz crucible and a crucible structure.
Background
In the production flow of monocrystalline silicon wafers, a quartz crucible is a key component of a photovoltaic monocrystalline furnace, is a consumable utensil for drawing large-diameter monocrystalline silicon, and is mainly used for containing molten silicon and manufacturing crystal bars required by subsequent procedures. Based on the requirement of the purity of the monocrystalline silicon piece, the quartz crucible is scrapped after the crystal pulling is finished by heating once or several times, and a new quartz crucible needs to be purchased for the next crystal pulling, so that the quartz crucible has stronger attribute characteristics of consumables in a monocrystalline silicon industry chain.
The quartz crucible is a container for melting silicon in the process of preparing monocrystalline silicon, the inside of the quartz crucible is filled with the silicon melt, and the outside of the quartz crucible is in contact with a graphite crucible or a carbon-carbon crucible. In Czochralski silicon, the one-time consumption of the quartz crucible and the time consumption for disassembling and assembling the furnace account for a high proportion of the cost. Under the traditional czochralski method, the quartz crucible can be used only once, and only one crystal bar can be produced at one time. The continuous Czochralski method can continuously feed materials into the quartz crucible in the crystal pulling process, continuously produce a plurality of new crystal bars and put higher requirements on the service life of the quartz crucible. The service time of the quartz crucible is prolonged, the utilization rate of the quartz crucible can be realized to the greatest extent, the production efficiency is greatly improved, and the manufacturing cost of the monocrystalline silicon piece is reduced. However, the quartz crucible has a crystal tending to become silica at high temperature, so-called "devitrification", which usually occurs on the surface layer of the quartz crucible, and we can find that both the inside and the outside of the quartz crucible have devitrification phenomena in daily use, and the external devitrification reduces the original thickness of the quartz crucible, and the crucible with reduced strength is easy to cause deformation.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a method for prolonging the service life of a czochralski monocrystalline quartz crucible and a crucible structure.
In order to solve the technical problems, the invention adopts the technical scheme that:
the crucible structure for prolonging the service life of the czochralski monocrystalline quartz crucible comprises a quartz crucible arranged on the inner side and used for containing silicon to be melted and a first crucible arranged on the outer side and used for supporting the quartz crucible, and is characterized in that a gap is reserved between the outer side of the quartz crucible and the inner side of the first crucible, and high-purity quartz sand is filled in the first gap and used for preventing the quartz crucible from reacting with the first crucible on the outer side at high temperature.
Furthermore, the mesh number of the high-purity quartz sand is 80-140 meshes, and SiO is 2 The content of (A) is not less than 99.5%.
Further, the quartz crucible comprises an inner coating, a transparent layer and a bubble layer from inside to outside, wherein the inner coating is formed by spraying a barium hydroxide solution.
Furthermore, the first crucible is of a detachable structure and is made of graphite/carbon.
Further, first crucible includes discoid crucible tray and the annular crucible lateral wall of circle, crucible tray upper end center department is provided with the cross-section and is the circular shape location arch, the crucible lateral wall is provided with the flexion including straight wall portion, straight wall portion lower end integrated into one piece, the flexion to centre of a circle department extend form with the protruding matched with holding ring in location.
Further, the crucible tray and the positioning protrusion are integrally formed or detachably connected.
Further, the width of the first gap is 2-4 mm.
The invention also provides a czochralski crystal growing furnace which adopts the crucible structure.
The invention also provides a method for prolonging the service life of the Czochralski single crystal quartz crucible, which is characterized in that high-purity quartz sand is filled in a gap between the outer wall of the quartz crucible and the inner wall of the graphite/carbon crucible to separate the quartz crucible and the graphite/carbon crucible, so that the quartz crucible is prevented from reacting with the graphite/carbon crucible at the outer side at high temperature; the thickness of the filled high-purity quartz sand is 2-4 mm.
The invention also provides a preparation method of the crucible structure for prolonging the service life of the czochralski monocrystalline quartz crucible, which is characterized by comprising the following steps: installing and fixing a crucible tray; the side wall of the crucible is concentrically placed at the upper end of the crucible tray; paving high-purity quartz sand of 2-4 mm at the upper end of the graphite/carbon crucible tray; placing a quartz crucible into the graphite/carbon crucible, and ensuring that the gap between the outer wall of the quartz crucible and the inner wall of the graphite/carbon crucible is 2-4 mm; high-purity quartz sand with the mesh number of 80-140 meshes is added into a gap between the quartz crucible and the graphite/carbon crucible.
Compared with the prior art, the invention has the following beneficial effects.
According to the invention, the high-purity quartz sand is filled in the first gap between the quartz crucible and the first crucible, the original direct contact between the quartz crucible and the first crucible is changed into indirect contact, and the high-purity quartz sand is a raw material for manufacturing the quartz crucible, and has the same characteristics.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of an embodiment of the present invention.
FIG. 2 is a schematic diagram of a second embodiment of the present invention.
FIG. 3 is an enlarged view of the invention at A.
In the figure: 10 is a quartz crucible, 20 is a first crucible, 210 is a crucible side wall, 220 is a crucible tray, 230 is a positioning protrusion, 240 is a positioning ring, 30 is a first gap, and 40 is high-purity quartz sand.
Detailed Description
The present invention is further illustrated by the following specific examples.
As shown in FIGS. 1 to 3, the present invention provides a crucible structure for improving the service life of a Czochralski single crystal quartz crucible, which comprises three layers, a first crucible 20 of graphite/carbon material as an outer layer and a quartz crucible 10 as an inner layer, wherein a first gap 30 is formed between the outer layer and the inner layer, and high purity quartz sand is filled in the first gap 30.
The quartz crucible 10 is a container for melting silicon in the process of manufacturing single crystal silicon, the inside of the quartz crucible is filled with the molten silicon, the quartz crucible 10 is rigid in a normal state, and the quartz crucible 10 can be softened at a temperature of about 1600 ℃ and cannot bear the molten silicon inside, and therefore, the outside of the quartz crucible 10 is supported by a graphite/carbon crucible.
The quartz crucible 10 has a crystal tendency to become silica at a high temperature, and the process is called recrystallization, also called "devitrification", and is generally called "crystallization", wherein the crystallization usually occurs on the surface layer of the quartz crucible 10, and we can find that the inner and outer layers of the quartz crucible 10 have crystallization phenomena in daily use, and the degree of crystallization varies according to the cause of the crystallization. The original thickness of the quartz crucible 10 can be reduced by crystallization, the crucible with reduced strength is easy to deform, and in severe cases, the strength is greatly influenced because the thickness of the crucible is reduced too much, so that the service life of the quartz crucible 10 is shortened, and the quartz crucible 10 is broken and leaks silicon because the pressure of molten silicon cannot be borne, thereby causing property loss and personal injury. Under the traditional czochralski method, the quartz crucible is only used once, and only one crystal bar can be produced at one time, so that the requirement on the service life of the quartz crucible 10 is not high. The continuous Czochralski method can continuously feed materials into the quartz crucible 10 during the crystal pulling process, continuously produce a plurality of new crystal bars, and put higher requirements on the service life of the quartz crucible 10.
The quartz crucible crystallization is divided into inner crystallization and outer crystallization, and the main reason of the outer crystallization is that the graphite/carbon crucible directly contacted with the outside has low purity or is contaminated, and reacts with the outer quartz crucible 10 to cause the outer layer crystallization of the quartz crucible 10 when in use, which accelerates the outer crystallization of the quartz crucible 10, and accordingly reduces the service life of the quartz crucible 10 in response. Contamination of the graphite/carbon crucible every time it is used is unavoidable due to the process defects of the czochralski method itself.
Through filling high-purity quartz sand 40, will originally direct contact become indirect contact, because high-purity quartz sand 40 is the raw and other materials of making quartz crucible, characteristics of both are the same, when graphite/carbon material crucible because self purity is low or receive to stain, the high-purity quartz sand 40 that its part was filled reacts with graphite/carbon material crucible and becomes the crystal of silica when using, high-purity quartz sand 40 has obstructed quartz crucible 10 and outside graphite/carbon material crucible and has reacted under the high temperature to reach the purpose of protection quartz crucible skin.
SiO in high-purity quartz sand 40 2 The content of the quartz sand is not less than 99.5 percent, the mesh number is required to be 80-140 meshes, and the small gap between the quartz sand is too large,the service life of the quartz crucible 10 is effectively prolonged, the quartz crucible is too small and too compact, the uniformity of heat of a thermal field is affected, and experiments show that when the mesh number of the high-purity quartz sand 40 is 80-140 meshes and the thickness is 2-4 mm, the service life can be prolonged from 300 hours to 400 hours when a 36-inch single crystal silicon rod is straightened, and the service life is prolonged from 6 straightened in one furnace to 8 straightened.
The quartz crucible 10 is an integrally formed bowl-shaped structure, the upper end of the quartz crucible is provided with an opening, the quartz crucible comprises an inner layer and an outer layer, the inner layer is a transparent layer, the content of bubbles is low, a barium coating is coated on the inner layer, the coating can prevent a bubble composite layer from being broken to a certain extent so as to prevent the bubbles from breaking and escaping to react with the inner surface of the quartz crucible 10, and a layer of compact and tiny cristobalite crystals can be formed on the wall of the quartz crucible, so that the strength of the quartz crucible can be increased, and the deformation resistance and the heat radiation efficiency of the quartz crucible 10 can be improved; the outer layer is a bubble composite layer, the bubble content is high, heat can be preserved, and the heat transfer is uniform.
The graphite/carbon crucible is bowl-shaped as a whole, and the upper end of the graphite/carbon crucible is open and is disposed outside the quartz crucible 10. The graphite/carbon crucible is of a detachable split structure, a disc-shaped crucible tray 220 and a circular crucible side wall 210, a positioning protrusion 230 with a circular cross section is arranged at the center of the upper end of the crucible tray 220, the upper end of the positioning protrusion 230 is small, the lower end of the positioning protrusion is large, the upper end of the positioning protrusion 230 is provided with a downward concave arc surface, and the concave arc surface can assist in positioning the quartz crucible 10 so as to ensure that the quartz crucible 10 and the graphite/carbon crucible are coaxial. The crucible side wall 210 includes a straight wall portion, a curved portion is integrally formed at the lower end of the straight wall portion, the curved portion extends towards the center of the circle to form a positioning ring 240, and the inner diameter of the positioning ring 240 is slightly larger than the outer diameter of the positioning protrusion 230 and is matched with the positioning protrusion 230.
In the first embodiment, as shown in fig. 1, in a 32-inch single crystal silicon graphite/carbon crucible, the crucible tray 220 is integrally formed with the positioning protrusion 230, the diameter of the positioning protrusion 230 is less than 0.5 times the outer diameter of the crucible tray 220, the upper end of the crucible tray 220 is a concave arc, the lower end of the curved portion of the crucible side wall 210 is placed on the upper end of the crucible tray 220, and the positioning protrusion 230 is matched and positioned by the positioning ring 240 to ensure that the crucible side wall 210 is concentric with the crucible tray 220.
In a second embodiment, as shown in fig. 2, in a 36-inch single crystal silicon graphite/carbon crucible, the crucible tray 220 is separated from the positioning protrusion 230, the diameter of the positioning protrusion 230 is slightly smaller than the outer diameter of the crucible tray 220, the lower end of the curved portion of the crucible side wall 210 is placed on the upper end of the crucible tray 220, and the positioning protrusion 230 is matched and positioned by the positioning ring 240, so as to ensure that the crucible side wall 210 is concentric with the crucible tray 220.
In both embodiments, the inner diameter of the crucible side wall 210 is H, the outer diameter of the quartz crucible 10 is H- (4 to 8) mm, and when the quartz crucible 10 is secured at the center of the crucible side wall 210 and the crucible tray 220, the width of the first gap is secured to be 2 to 4 mm.
The invention also provides a czochralski crystal growing furnace, which comprises a heater, a heat-insulating layer, a graphite crucible, a quartz crucible and a furnace wall, wherein the heat-insulating layer and the heater are arranged inside the furnace wall, the graphite crucible is fixed on a crucible towing bar, the crucible towing bar is connected with a central shaft, the quartz crucible is placed in the graphite crucible, high-purity quartz sand 40 is filled between the quartz crucible 10 and the graphite crucible, silicon melt is prevented in the quartz crucible 10, a heat shield is arranged above the silicon melt, seed crystals are contacted with the silicon melt, and exhaust holes are formed in the furnace wall.
The invention also provides a method for prolonging the service life of the czochralski monocrystal quartz crucible, which is characterized in that high-purity quartz sand 40 is filled in a gap between the outer wall of the quartz crucible 10 and the inner wall of the graphite/carbon crucible to separate the quartz crucible and the graphite/carbon crucible so as to prevent the quartz crucible 10 from reacting with the graphite/carbon crucible at the outer side at high temperature; wherein the thickness of the filled high-purity quartz sand 40 is 2-4 mm.
The invention also provides a preparation method of the crucible structure for prolonging the service life of the czochralski monocrystalline quartz crucible, which comprises the following steps:
s1: mounting and fixing a crucible tray 220 to the upper end of the crucible towing rod;
s2: placing the crucible side wall 210 concentrically on the upper end of the crucible tray 220;
s3: paving 2-4 mm of high-purity quartz sand 40 at the upper end of the bottom wall of the graphite/carbon crucible;
s4: placing the quartz crucible 10 into the graphite/carbon crucible, adjusting the position of the quartz crucible 10, and ensuring that the quartz crucible 10 is positioned at the center of the graphite/carbon crucible, wherein the gap between the outer wall of the quartz crucible 10 and the inner wall of the graphite/carbon crucible is 2-4 mm;
s5: high purity quartz sand 40 of 80-140 mesh is added to the gap between the quartz crucible 10 and the graphite/carbon crucible.
According to the invention, the high-purity quartz sand is filled in the first gap between the quartz crucible and the first crucible, the original direct contact between the quartz crucible and the first crucible is changed into indirect contact, and the high-purity quartz sand is a raw material for manufacturing the quartz crucible, and has the same characteristics.
The above embodiments are merely illustrative of the principles of the present invention and its effects, and do not limit the present invention. It will be apparent to those skilled in the art that modifications and improvements can be made to the above-described embodiments without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications or changes be made by those skilled in the art without departing from the spirit and technical spirit of the present invention, and be covered by the claims of the present invention.
Claims (10)
1. The crucible structure for prolonging the service life of the czochralski monocrystalline quartz crucible comprises a quartz crucible (10) arranged at the inner side for containing molten silicon and a first crucible (20) arranged at the outer side for supporting the quartz crucible (10), and is characterized in that a gap is reserved between the outer side of the quartz crucible (10) and the inner side of the first crucible (20), the first gap (30) is filled with high-purity quartz sand (40), and the high-purity quartz sand (40) is used for preventing the quartz crucible (10) from reacting with the first crucible (20) at the outer side at high temperature.
2. The crucible structure for improving the service life of a Czochralski single crystal quartz crucible as recited in claim 1,
the mesh number of the high-purity quartz sand (40) is 80-140 meshes, and SiO is 2 The content of (A) is not less than 99.5%.
3. The crucible structure for improving the service life of the czochralski single crystal quartz crucible according to claim 1, wherein the quartz crucible (10) comprises an inner coating layer, a transparent layer and a bubble layer from the inside to the outside, and the inner coating layer is formed by spraying a barium hydroxide solution.
4. The crucible structure for improving the service life of the czochralski single crystal quartz crucible as claimed in claim 1, wherein the first crucible (20) is of a detachable structure, and the first crucible (20) is of a graphite/carbon material.
5. The crucible structure for prolonging the service life of the czochralski single crystal quartz crucible as claimed in claim 4, wherein the first crucible (20) comprises a disc-shaped crucible tray (220) and a circular crucible side wall (210), a positioning protrusion (230) with a circular cross section is arranged at the center of the upper end of the crucible tray (220), the crucible side wall (210) comprises a straight wall part, a bending part is integrally formed at the lower end of the straight wall part, and the bending part extends to the center of the circle to form a positioning ring (240) matched with the positioning protrusion (230).
6. The crucible structure for improving the service life of the czochralski single crystal quartz crucible as claimed in claim 5, wherein the crucible tray (220) is integrally formed with the positioning projection (230) or detachably connected thereto.
7. The crucible structure for improving the service life of the czochralski single crystal quartz crucible according to claim 4 or 5, wherein the width of the first gap (30) is 2-4 mm.
8. A Czochralski crystal growing furnace, wherein the Czochralski crystal growing furnace adopts the crucible structure as claimed in any one of claims 1 to 6.
9. A method for improving the service life of a Czochralski single crystal quartz crucible as claimed in any one of claims 2 to 7, wherein the gap between the outer wall of the quartz crucible (10) and the inner wall of the graphite/carbon crucible is filled with high purity quartz sand (40) to separate the outer wall from the graphite/carbon crucible to block the reaction of the quartz crucible (10) with the graphite/carbon crucible at a high temperature; the thickness of the filled high-purity quartz sand (40) is 2-4 mm.
10. A method of manufacturing a crucible structure for improving the service life of a Czochralski single crystal quartz crucible as claimed in any one of claims 4 to 7, comprising the steps of:
mounting and fixing a crucible tray (220);
placing the crucible side wall (210) concentrically on the upper end of the crucible tray (220);
paving 2-4 mm of high-purity quartz sand (40) at the upper end of the bottom wall of the graphite/carbon crucible;
placing the quartz crucible (10) into a graphite/carbon crucible, and ensuring that the gap between the outer wall of the quartz crucible (10) and the inner wall of the graphite/carbon crucible is 2-4 mm;
high-purity quartz sand (40) with the mesh number of 80-140 meshes is added to the gap between the quartz crucible (10) and the graphite/carbon crucible.
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