CN214694464U - Crystal growth thermal field and crystal pulling equipment - Google Patents
Crystal growth thermal field and crystal pulling equipment Download PDFInfo
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- CN214694464U CN214694464U CN202023134793.6U CN202023134793U CN214694464U CN 214694464 U CN214694464 U CN 214694464U CN 202023134793 U CN202023134793 U CN 202023134793U CN 214694464 U CN214694464 U CN 214694464U
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Abstract
The utility model discloses a crystal growth thermal field and crystal pulling equipment relates to crystal pulling technical field to it is corroded to reduce crystal growth thermal field, improves the life in crystal growth thermal field. The crystal growth thermal field includes a heater for heating the feedstock. The thermal field also includes a first thermal field and a second thermal field. The first thermal field and the second thermal field are closer to a central axis of the thermal field than the heater. The second thermal field piece is sleeved outside the first thermal field piece. The first thermal field and the second thermal field have a gap therebetween, and the gap has a filler therein. The crystal pulling equipment comprises the crystal growth thermal field provided by the technical scheme. The utility model provides a crystal growth thermal field is used for heating crystal material.
Description
Technical Field
The utility model relates to a crystal pulling technical field especially relates to a crystal growth thermal field and crystal pulling equipment.
Background
The Czochralski method, also known as the Czochralski method, is a method of single crystal growth established from Czochralski (CZ), referred to as the CZ method for short. At present, a single crystal furnace is widely adopted as single crystal growth equipment, and a silicon single crystal rod is grown by a Czochralski method.
In the prior art, the growth of the Czochralski method is carried out in a thermal field of a single crystal furnace, raw materials are heated by a heater, and simultaneously, a silicon single crystal rod is grown from a raw material melt by means of a seed crystal and pulled out. The thermal field comprises thermal field pieces such as a crucible, a heater, a heat preservation cylinder and the like. Wherein the heater has an electrode structure connected to a power supply. Gaps are formed between the thermal field elements, such as between the electrodes and their sheaths. During the crystal pulling process, silicon vapor is generated in the single crystal furnace. When silicon vapor enters the gap between the two thermal field pieces, the silicon vapor can corrode the thermal field pieces, the service life of the thermal field pieces is shortened, and even the thermal field pieces are damaged, so that accidents are caused.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a crystal growth thermal field and crystal pulling equipment reduces the degree that thermal field spare was corroded in the crystal growth thermal field, improves the life of thermal field spare to improve the life in crystal growth thermal field.
In a first aspect, the present invention provides a crystal growth thermal field. The crystal growth thermal field includes a heater for heating the feedstock. The thermal field also includes a first thermal field and a second thermal field. The first thermal field and the second thermal field are closer to a central axis of the thermal field than the heater. The second thermal field piece is sleeved outside the first thermal field piece. The first thermal field and the second thermal field have a gap therebetween, and the gap has a filler therein.
When the technical scheme is adopted, a gap is formed between the first thermal field piece and the second thermal field piece, and filler is filled in the gap. The filler can be with the clearance packing between first thermal field spare and the second thermal field spare, make between difficult entering first thermal field spare of silicon steam and the second thermal field spare, reduce the outer wall of the first thermal field spare of silicon steam contact and the inner wall of second thermal field spare, thereby reduce the degree that the outer wall of first thermal field spare and the inner wall of second thermal field spare are corroded, not only can improve the life of first thermal field spare and second thermal field spare, thereby improve the life of crystal growth thermal field, and can improve the degree of cooperation that the cover of second thermal field spare was established at first thermal field spare.
In one possible implementation, the first thermal field is a crucible. The crucible is a quartz crucible.
In one possible implementation, the second thermal field is a crucible. The crucible is a graphite crucible.
When the technical scheme is adopted, when the first thermal field piece is the quartz crucible and the second thermal field piece is the graphite crucible, the filler between the quartz crucible and the graphite crucible can cover the inner wall of the graphite crucible, so that the contact between the inner wall of the graphite crucible and silicon steam is reduced, the corrosion degree of the inner wall of the graphite crucible is reduced, the service life of the graphite crucible is prolonged, and the cost is saved. And moreover, because the graphite crucible is not easy to corrode, a gap is not easy to appear between the graphite crucible and the quartz crucible, so that the quartz crucible is not easy to deform, the conditions of cracking, silicon leakage and the like of the quartz crucible caused by deformation of the quartz crucible are reduced, and the working stability of the crystal pulling equipment can be improved.
In one possible implementation, the first thermal field is an electrode. The second thermal field is an electrode sheath.
When the technical scheme is adopted, the filler can fill the gap between the electrode and the electrode sheath, and the filler can cover the inner wall of the electrode sheath, so that the corrosion degree of the inner wall of the electrode sheath is reduced, and the service life of the electrode sheath is prolonged. Moreover, the filler may also reduce heat loss from the gap between the electrode and the electrode sheath. In addition, the filler can absorb a part of heat, and damage of the electrode sheath due to high temperature is reduced.
Moreover, the filler is positioned between the electrode and the electrode sheath, and the filler can protect the electrode, so that the heat loss of the electrode is further reduced. In addition, the electrode sheath can limit the filler between the electrode sheath and the electrode, so that the filler is prevented from scattering at other parts of the crystal pulling equipment in the use process, the filler is easy to clean, and the filler is prevented from blocking other parts of the crystal pulling equipment.
In one possible implementation, the electrode sheath has a retainer ring at one end thereof, and the retainer ring is located in the gap when the electrode sheath and the electrode are in an assembled state.
When the technical scheme is adopted, the electrode sheath and the electrode are in an assembled state, and the retainer ring can be positioned below the electrode sheath. Based on this, when the filler is filled between the electrode sheath and the electrode, the retainer ring is located below the filler. At the moment, when the electrode sheath and the filler are required to be disassembled, the electrode sheath can be lifted along the extension direction of the electrode, and the retainer ring drives the filler to be lifted together in the lifting process of the electrode sheath, so that the filler is conveniently taken out, and the filler is reduced to scatter in crystal pulling equipment in the process of disassembling the electrode sheath and the filler.
In one possible implementation, the filler includes a one-piece filler.
When the technical scheme is adopted, the filler comprises an integrated filler, and the integrated filler can be conveniently disassembled and assembled between the first thermal field piece and the second thermal field piece.
In one possible implementation, the filler includes a filler dispersion.
When the technical scheme is adopted, the filler comprises a filler dispersion. When the first thermal field piece and the second thermal field piece are corroded by silicon vapor to cause a gap to be formed between the first thermal field piece and the second thermal field piece, the filler dispersoid can move to the gap under the action of gravity to fill the gap, so that the matching degree of the second thermal field piece sleeved on the first thermal field piece is improved.
In one possible implementation, when the filler comprises a filler dispersion. The filler dispersion is at least one of sand-like filler dispersion, cotton-like filler dispersion and flake-like filler dispersion.
When the technical scheme is adopted, the sand-like filler dispersion, the cotton-wool-like filler dispersion and the flake-like filler dispersion can be filled between the graphite crucible and the quartz crucible, and when a gap occurs between the graphite crucible and the quartz crucible, the sand-like filler dispersion, the cotton-wool-like filler dispersion and the flake-like filler dispersion can move to the gap.
In one possible implementation, the filler is a thermal insulation filler.
When the technical scheme is adopted, the filler is a heat-insulating filler. The heat insulation filler can insulate heat, so that heat loss of the first thermal field piece is reduced, the first thermal field piece is insulated from other parts of the crystal pulling equipment by the heat insulation filler, and short circuit between the first thermal field piece and other parts of the crystal pulling equipment is reduced.
In one possible implementation, the thermal conductivity of the thermal insulation filler is less than or equal to 7.6W/mK.
When the technical scheme is adopted, the heat conductivity coefficient of the heat-insulating filler is less than or equal to 7.6W/mK, so that the heat-insulating filler can achieve a better heat-insulating effect.
In a possible implementation manner, the filler includes at least one of a quartz filler, a carbon-carbon composite filler, and a graphite filler.
In one possible implementation, the heat-resistant temperature of the filler is greater than or equal to the temperature of the thermal field.
In a second aspect, the present invention also provides a crystal pulling apparatus. The crystal pulling apparatus includes a furnace body and a crystal growth thermal field as described in the first aspect or any one of the possible implementations of the first aspect. The crystal growth thermal field is accommodated in the furnace body.
The beneficial effects of the crystal pulling apparatus provided by the second aspect are the same as those of the crystal growth thermal field described in the first aspect or any one of the possible implementations of the first aspect, and are not described herein again.
Drawings
The accompanying drawings, which are described herein, serve to provide a further understanding of the invention and constitute a part of this specification, and the exemplary embodiments and descriptions thereof are provided for explaining the invention without unduly limiting it. In the drawings:
FIG. 1 is a schematic view of a crystal puller according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a first thermal field coupled to a second thermal field in an embodiment of the invention;
FIG. 3 is a schematic view of a crucible structure in an embodiment of the present invention;
fig. 4 is a schematic diagram of an electrode structure in an embodiment of the present invention.
Reference numerals: 100-thermal field, 110-heater, 120-first thermal field, 130-second thermal field, 140-filler, 150-crucible structure, 151-quartz crucible, 152-graphite crucible, 160-electrode structure, 161-electrode, 162-electrode sheath.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
FIG. 1 illustrates a schematic diagram of a crystal pulling apparatus provided by an embodiment of the present invention. As shown in FIG. 1, a crystal pulling apparatus according to an embodiment of the present invention includes a furnace body and a crystal growth thermal field 100. The crystal growth thermal field 100 is contained within the furnace body. During the crystal pulling process of the crystal pulling device, the crystal growth thermal field 100 is not easy to be corroded by silicon vapor and has long service life.
As shown in fig. 1, a crystal growth thermal field 100 provided by the embodiment of the present invention includes a crucible structure 150, a heater 110, a thermal field member such as a heat-insulating cylinder, etc. Wherein the heater 110 is used to heat the crucible structure 150, the heater 110 has an electrode structure 160 connected to a power source. Gaps are provided between the thermal field members, for example, between the electrode 161 and the electrode sheath 162. Fig. 2 illustrates a cross-sectional view of a first thermal field coupled to a second thermal field in an embodiment of the invention. As shown in fig. 2, the two thermal fields are a first thermal field 120 and a second thermal field 130, respectively. The first thermal field 120 and the second thermal field 130 are closer to the central axis of the thermal field 100 than the heater 110. The second thermal field element 130 is sleeved outside the first thermal field element 120. There is a gap between the first thermal field 120 and the second thermal field 130, with a filler 140 in the gap.
In particular, as shown in FIG. 2, when the crystal growth field 100 provides a thermal field for the crystal material, silicon vapor is generated in the thermal field 100. The filler 140 fills the gap between the first thermal field 120 and the second thermal field 130, so that silicon vapor is not easily introduced between the first thermal field 120 and the second thermal field 130.
As shown in fig. 2, there is a gap between the first thermal field 120 and the second thermal field 130, and a filler 140 is in the gap. The filler 140 may fill a gap between the first thermal field 120 and the second thermal field 130, so that silicon vapor is not easy to enter between the first thermal field 120 and the second thermal field 130, and the silicon vapor is reduced from contacting the outer wall of the first thermal field 120 and the inner wall of the second thermal field 130, thereby reducing the degree of corrosion of the outer wall of the first thermal field 120 and the inner wall of the second thermal field 130, which may not only improve the service life of the first thermal field 120 and the second thermal field 130, thereby improving the service life of the crystal growth thermal field 100, but also improve the degree of fitting of the second thermal field 130 in the first thermal field 120.
In one possible approach, as shown in fig. 2, the filler 140 may comprise a one-piece filler. The integrated filler may be moved as a whole when the filler 140 is inserted into or removed from the gap. Thus, the filler 140 comprises a one-piece filler that may facilitate disassembly between the first thermal field 120 and the second thermal field 130.
In another possible approach, as shown in fig. 2, the filler 140 may comprise a filler dispersion. When the first thermal field 120 and the second thermal field 130 are corroded by silicon vapor to cause a gap between the first thermal field 120 and the second thermal field 130, the filler dispersion can move to the gap under the action of gravity to fill the gap, so that the gap between the first thermal field 120 and the second thermal field 130 is avoided, the first thermal field 120 and the second thermal field 130 are unstable in operation, and the matching degree of the second thermal field 130 and the first thermal field 120 is improved.
In one example, as shown in fig. 2, the filler 140 may also include both a one-piece filler and a filler dispersion. When the filler 140 includes the filler dispersion, the filler dispersion may be at least one of a sand-like filler dispersion, a cotton-like filler dispersion, and a flake-like filler dispersion. The sand-like filler dispersion, the cotton-wool-like filler dispersion, and the flake-like filler dispersion may be filled between the first and second thermal fields 120 and 130. When a void occurs between the first thermal field 120 and the second thermal field 130, the sand-like filler dispersion, the cotton-wool-like filler dispersion, and the flake-like filler dispersion may move to the void.
For example, the filler may include at least one of a quartz filler, a carbon-carbon composite filler, and a graphite filler. The filler may be at least one of quartz sand, quartz crucible chips, and quartz wool. The existing crystal pulling equipment mostly adopts a quartz crucible, and after the quartz crucible is used for a period of time, the quartz crucible is easy to break to generate quartz crucible fragments. Therefore, when the quartz crucible fragments are used as the filler, the waste can be utilized, and the energy-saving and environment-friendly effects and the cost are achieved.
In order to ensure that the filler can maintain the excellent physical and mechanical properties during the crystal pulling process, the heat-resistant temperature of the filler can be greater than or equal to the temperature of the thermal field.
In an alternative, the filler may be a thermal insulating filler. To ensure the heat insulation effect, the heat conductivity coefficient of the heat insulation filler can be less than or equal to 7.6W/mK. The heat insulation filler can insulate heat, so that heat loss of the first thermal field piece is reduced, the first thermal field piece is insulated from other parts of the crystal pulling equipment by the heat insulation filler, and short circuit between the first thermal field piece and other parts of the crystal pulling equipment is reduced.
In an alternative, as shown in fig. 1, when the crystal growth thermal field 100 includes a crucible structure 150 for containing the crystal material, the crucible structure includes a quartz crucible 151 and a graphite crucible 152 disposed outside the quartz crucible 151. The filling between the quartz crucible 151 and the graphite crucible 152 is not shown in fig. 1. At this time, the first thermal field is a crucible, which is the quartz crucible 151. The second thermal field is a crucible, which is a graphite crucible 152.
In practical application, fig. 3 illustrates a schematic structural diagram of a crucible in an embodiment of the present invention. As shown in fig. 1 and 3, a graphite crucible 152 is placed in a furnace body, and then a quartz crucible 151 is placed in the graphite crucible 152. At this time, a gap is left between the graphite crucible 152 and the quartz crucible 151, and the filler 140 is filled in the gap. During the crystal pulling process, the filler 140 can cover the inner wall of the graphite crucible 152, and the contact between the inner wall of the graphite crucible 152 and silicon vapor is reduced, so that the corrosion degree of the inner wall of the graphite crucible 152 is reduced, the service life of the graphite crucible 152 is prolonged, and the cost is saved. Moreover, because the graphite crucible 152 is not easy to corrode, a gap is not easy to appear between the graphite crucible 152 and the quartz crucible 151, so that the quartz crucible 151 is not easy to deform, the conditions of breakage, silicon leakage and the like of the quartz crucible 151 caused by deformation of the quartz crucible 151 are reduced, and the working stability of the crystal pulling equipment can be improved.
In addition, as shown in fig. 3, when the filler 140 includes the filler dispersion, even if the graphite crucible 152 is corroded to have a reduced wall thickness or a pit, and a gap is formed between the graphite crucible 152 and the quartz crucible 151, the filler dispersion can generate certain vibration during the crystal pulling process of the crystal pulling apparatus, and the filler dispersion can move to the gap under the action of gravity to fill the gap, so that the deformation of the quartz crucible 151 is further reduced, and the crucible lifting system is more stable during the crystal pulling of the crystal pulling apparatus, and the crystal pulling is convenient.
In another alternative, as shown in FIG. 1, when crystal growth thermal field 100 includes electrode structure 160, electrode structure 160 includes an electrode 161 and an electrode sheath 162. The electrodes 161 are electrically connected to the heater and the power supply, respectively. The electrode sheath 162 is fitted around the outside of the electrode 161 for protecting the electrode 161. In this case, the first thermal field is an electrode 161, and the second thermal field is an electrode sheath 162.
In practical applications, fig. 4 illustrates a schematic diagram of an electrode structure in an embodiment of the present invention. As shown in fig. 1 and 4, the electrode 161 may be fixed in the furnace, and then the electrode sheath 162 is sleeved outside the electrode 161. At this time, as shown in fig. 4, a gap is left between the electrode sheath 162 and the electrode 161, and the filler 140 is filled in the gap. During the crystal pulling process, the filler 140 can fill the gap between the electrode 161 and the electrode sheath 162, and the filler 140 can not only cover the inner wall of the electrode sheath 162, thereby reducing the degree of corrosion of the inner wall of the electrode sheath 162 and improving the service life of the electrode sheath 162. Also, heat loss from the gap between the electrode 161 and the electrode sheath 162 is reduced. Also, the filler 140 may absorb a portion of the heat, reducing damage to the electrode sheath 162 due to high temperatures.
Furthermore, as shown in fig. 4, the filler 140 is located between the electrode 161 and the electrode sheath 162, and the filler 140 can protect the electrode 161, thereby further reducing the heat loss of the electrode 161. Further, when the filler 140 includes a filler dispersion and the electrode sheath 162 is fitted over the electrode 161, the bottom surface of the electrode sheath 162 is in contact with the bottom surface of the furnace body, thereby closing the lower end of the gap. Therefore, even if the filler 140 includes the filler dispersion, it can be filled between the electrode 161 and the electrode sheath 162. Also, the electrode sheath 162 can confine the filler dispersion between the electrode sheath 162 and the electrode 161, reducing the filler dispersion from scattering elsewhere in the crystal puller during use, not only allowing the filler dispersion to be easily cleaned, but also reducing the filler dispersion from clogging other locations in the crystal puller. For example, the furnace body has argon gas holes below it, and the electrode sheath 162 can reduce the blockage of the argon gas holes after the filler dispersion has dissipated.
As shown in fig. 4, when the filler 140 is a thermal insulation filler, the thermal insulation filler can not only insulate heat, but also reduce the damage of the electrode sheath 162 due to high temperature. Also, the heat insulating filler may further reduce heat loss of the electrode 161. Due to the fact that the power of the crystal pulling device is too high, the electrode 161 is prone to short circuit with other parts nearby the electrode 161, for example, an insulating layer or a bottom protection pressing plate, the electrode 161 and the heater 110 are ignited, the service life of the heater 110 is shortened, the electrode 161 and other parts of the crystal pulling device can be insulated through the heat insulation filler, the number of times of ignition between the electrode 161 and the heater 110 is reduced, and the service life of the heater 110 is prolonged.
In one example, as shown in fig. 4, the electrode sheath 162 may be a quartz electrode sheath 162 or a carbon-carbon composite electrode sheath 162. When the electrode sheath 162 is a quartz electrode sheath 162, not only is the thermal insulation of the electrode sheath 162 improved, but the electrode 161 can also be further insulated from other components of the crystal puller. When the electrode sheath 162 is a carbon-carbon composite electrode sheath 162, the electrode sheath 162 is more resistant to high temperatures, cracking of the electrode sheath 162 due to high temperatures is reduced, and the electrode 161 can be further insulated from other parts of the crystal pulling apparatus. For example, the furnace body has an insulating layer and a bottom protection pressing plate near the electrode 161, and the electrode sheath 162 can prevent the electrode 161 from being short-circuited with the insulating layer or the bottom protection pressing plate, which may cause damage to the heater 110.
Optionally, one end of the electrode sheath is provided with a retainer ring. When the electrode sheath and the electrode are in an assembled state, the retainer ring is positioned in the gap. When the electrode sheath is sleeved on the electrode, the electrode penetrates through the check ring, and the inner wall of the check ring is contacted with the outer wall of the electrode. When the electrode sheath and the electrode are in an assembled state, the retainer ring can be positioned below the electrode sheath. Based on this, when the filler is filled between the electrode sheath and the electrode, the retainer ring is located below the filler. At the moment, when the electrode sheath and the filler are required to be disassembled, the electrode sheath can be lifted along the extension direction of the electrode, and the retainer ring drives the filler to be lifted together in the lifting process of the electrode sheath, so that the filler is conveniently taken out, and the filler is reduced to scatter in crystal pulling equipment in the process of disassembling the electrode sheath and the filler.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A crystal growth thermal field comprises a heater for heating raw materials, and is characterized by further comprising a first thermal field piece and a second thermal field piece, wherein the first thermal field piece and the second thermal field piece are closer to the central axis of the thermal field than the heater, the second thermal field piece is sleeved outside the first thermal field piece, a gap is formed between the first thermal field piece and the second thermal field piece, and a filler is arranged in the gap.
2. The crystal growth thermal field of claim 1, wherein the first thermal field is a crucible, the crucible being a quartz crucible; and/or the presence of a gas in the gas,
the second thermal field is a crucible, and the crucible is a graphite crucible.
3. The crystal growth thermal field of claim 1, wherein the first thermal field is an electrode and the second thermal field is an electrode sheath.
4. The crystal growth thermal field of claim 3, wherein one end of the electrode sheath has a retaining ring that is positioned within the gap when the electrode sheath and the electrode are in an assembled state.
5. The crystal growth thermal field according to any one of claims 1 to 4, wherein the filler comprises a monolithic filler and/or a filler dispersion.
6. The crystal growth thermal field of claim 5, wherein when the filler comprises a filler dispersion, the filler dispersion is at least one of a sand-like filler dispersion, a cotton-like filler dispersion, a flake-like filler dispersion.
7. The crystal growth thermal field according to any one of claims 1 to 4, wherein the filler is a heat insulating filler.
8. The crystal growth thermal field of claim 7, wherein the thermal conductivity of the thermally insulating fill is less than or equal to 7.6W/mK.
9. The crystal growth thermal field according to any one of claims 1 to 4, wherein the filler comprises at least one of a quartz filler, a carbon-carbon composite filler, and a graphite filler; and/or the presence of a gas in the gas,
the heat-resistant temperature of the filler is greater than or equal to the temperature of the thermal field.
10. A crystal pulling apparatus comprising a furnace body and a crystal growth thermal field as claimed in any one of claims 1 to 9 contained within the furnace body.
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| CN202023134793.6U CN214694464U (en) | 2020-12-23 | 2020-12-23 | Crystal growth thermal field and crystal pulling equipment |
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| CN202023134793.6U CN214694464U (en) | 2020-12-23 | 2020-12-23 | Crystal growth thermal field and crystal pulling equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115074830A (en) * | 2022-06-28 | 2022-09-20 | 乌海市京运通新材料科技有限公司 | Method for prolonging service life of czochralski monocrystalline quartz crucible and crucible structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115074830A (en) * | 2022-06-28 | 2022-09-20 | 乌海市京运通新材料科技有限公司 | Method for prolonging service life of czochralski monocrystalline quartz crucible and crucible structure |
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