CN115074670A - 一种二硒化钯的制备方法 - Google Patents
一种二硒化钯的制备方法 Download PDFInfo
- Publication number
- CN115074670A CN115074670A CN202210703529.4A CN202210703529A CN115074670A CN 115074670 A CN115074670 A CN 115074670A CN 202210703529 A CN202210703529 A CN 202210703529A CN 115074670 A CN115074670 A CN 115074670A
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- Prior art keywords
- palladium
- film
- diselenide
- substrate
- selenium
- Prior art date
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 240
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 119
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 76
- 239000011669 selenium Substances 0.000 claims abstract description 38
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 238000004528 spin coating Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000006185 dispersion Substances 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229920006289 polycarbonate film Polymers 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical group COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 6
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- 239000010453 quartz Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
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- 238000002207 thermal evaporation Methods 0.000 claims description 2
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- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000003746 solid phase reaction Methods 0.000 abstract description 4
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- 230000003287 optical effect Effects 0.000 description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 239000002120 nanofilm Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 125000003748 selenium group Chemical group *[Se]* 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
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- 230000004044 response Effects 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229960001701 chloroform Drugs 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种二硒化钯的制备方法，包括以下步骤：(1)在基底表面进行钯金属镀膜，得到基底/钯薄膜；(2)在基底/钯薄膜的表面旋涂含硒分散液，干燥后在保护气氛中，利用等离子体辅助热退火制备得到二硒化钯薄膜。所述制备方法还包括：将步骤(2)得到的二硒化钯薄膜转移至目标基底的步骤。本发明利用钯薄膜蒸镀‑硒分子涂覆‑加热反应制备二硒化钯薄膜的方法，不但钯金属膜与硒分子膜固相反应制备方法简单直接、生长速率快，而且利用了钯薄膜前驱体的完整涂覆特点，可以得到完整的二硒化钯薄膜，可获取晶圆级二硒化钯的规模化生产。
Description
技术领域
本发明涉及半导体晶圆技术领域，具体涉及一种二硒化钯的制备方法。
背景技术
二硒化钯(PdSe2)是和石墨烯类似的层状二维结构薄膜。石墨烯拥有极高的电子迁移率、高热导率、高机械强度、光透率等优异的物理性质，使得其在集成电路、气体分子传感器、超级电容器、柔性透明电极、太赫兹器件等领域有着重要的应用前景。然而，由于石墨烯本身并没有能隙，使其无法像传统半导体那样构建pn结，极大地限制了石墨烯在半导体等领域的应用。
二硒化钯是一种贵金属硫族化合物，具有良好的环境稳定性和带隙可调特性。当二硒化钯的厚度从单层变为多层，其带隙会从1.3eV到0eV变化，表现了优异的光电性能和丰富的应用潜力。层状二硒化钯在场效应晶体管和光电探测器应用上吸引了极大的研究兴趣。有以下几种方法可获得高质量二硒化钯，例如机械剥离法、脉冲激光沉积法和化学气相沉积法。机械剥离法制备的二硒化钯是最早报道的，但是有尺寸小以及厚度不可控的缺点。脉冲激光沉积法制备速率快，但是对靶材要求苛刻以及制备的二硒化钯面积小。化学气相沉积法制备的二硒化钯单晶性良好，但是存在单个畴区为微米级的局限性，目前不能实现全覆盖薄膜的制备。申请号为201810102885.4的专利公开了一种二硒化钯二维晶态薄膜层的制备方法：纯硒和纯钯按反应比例以蒸发的方式生成硒原子和钯原子后沉积至基座上，硒原子和钯原子在基座上发生反应，形成原子组成的二维有序晶态薄膜层，该薄膜层中，硒原子和钯原子以硒-钯-硒的叠加状态分布。但通过蒸发沉积形成的薄膜很粗糙、不致密，影响后续使用。所以需要制备方法简单，可获得高质量二硒化钯的制备方法。
发明内容
针对上述现有技术，本发明的目的是提供一种二硒化钯的制备方法。本发明利用钯薄膜蒸镀-硒分子涂覆-加热反应制备二硒化钯薄膜的方法，不但钯金属膜与硒分子膜固相反应制备方法简单直接、生长速率快，而且利用了钯薄膜前驱体的完整涂覆特点，可以得到完整的二硒化钯薄膜，可获取晶圆级二硒化钯的规模化生产。
为实现上述目的，本发明采用如下技术方案：
本发明提供一种二硒化钯的制备方法，包括以下步骤：
(1)在基底表面进行钯金属镀膜，得到基底/钯薄膜；
(2)在基底/钯薄膜的表面旋涂含硒分散液，干燥后在保护气氛中，利用等离子体辅助热退火制备得到二硒化钯薄膜。
优选的，步骤(1)中，所述镀膜为电子束蒸发镀膜、电阻热蒸发镀膜或者磁控溅射镀膜。
优选的，步骤(1)中，所述基底为单晶硅/二氧化硅、单晶钛酸锶或单晶石英。
优选的，步骤(1)中，所述钯薄膜的厚度为1-30nm。
优选的，步骤(2)中，所述含硒分散液是将硒分散于溶剂中得到的，所述溶剂为苯甲醚或乙醇；所述含硒分散液的浓度为0.12～1.2g/mL。
优选的，步骤(2)中，所述旋涂的速度为550-2800r/min；所述旋涂的速度为20-90nm；所述干燥的温度为55-95℃。
优选的，步骤(2)中，所述保护气氛为氢气气氛、氮气气氛或者真空气氛。
优选的，步骤(2)中，所述等离子的功率为100-500W；所述退火的温度为400℃，退火的时间为2-10min。退火的升温速率为50℃/min。
优选的，所述制备方法还包括：将步骤(2)得到的二硒化钯薄膜转移至目标基底的步骤。
优选的，在步骤(2)得到的二硒化钯薄膜的表面附着一层聚碳酸酯薄膜，采用碱刻蚀使基底脱落，将剩余的二硒化钯/聚碳酸酯薄膜转移到目标基底上，用溶剂溶解聚碳酸酯薄膜，得到附着在目标基底上的二硒化钯薄膜。
优选的，聚碳酸酯薄膜是将PC溶液旋涂于二硒化钯薄膜上，干燥后得到的。旋涂的速度为800～1200r/min。
PC溶液是由PC与三氯甲烷或二氯甲烷混合得到的，PC溶液的浓度为10wt％。
碱溶液浸泡是在50-80℃水浴加热下，浸泡于浓度为0.2-0.8mol/L的氢氧化钠或氢氧化钾溶液中。
优选的，所述溶剂为热丙酮或二氯甲烷(40～75℃下水浴)。
本发明的有益效果：
(1)本发明首次公开利用钯薄膜蒸镀-硒分子涂覆-加热反应制备二硒化钯薄膜的方法，这种方法不但具有钯金属膜与硒分子膜固相反应简单直接、生长速率快的优点，而且由于利用了钯薄膜前驱体的完整涂覆特点，可以得到完整的二硒化钯薄膜，可获取晶圆级二硒化钯的规模化生产；
(2)本发明公开的制备方法采用在绝缘基板上沉积钯薄膜及涂覆硒分子薄膜并加热反应的方法，可进行电极触点的镀膜，获得光电子或电子器件的制备，实现与传统半导体制备工艺无缝衔接；
(3)本发明公开的制备方法提出利用等离子体活化辅助电阻加热，可以实现对钯薄膜和硒分子膜的加热反应，使钯和硒快速化合，从而获取二硒化钯，通过固相反应，充分利用原材料硒，不会由于硒挥发而浪费硒原料，同时节省了反应时间。不但可以抑制非晶硒化物等副产物的出现，而且加速材料的合成。
附图说明
图1为本发明所述二硒化钯制备流程示意图。
图2为本发明所获得的二硒化钯光学显微镜(1)、拉曼光谱(2)、透射电镜显微图片(3)和X射线光电子能谱(4～5)。二硒化钯光学显微镜(1)二硒化钯光学显微镜图(右上角的三角形区域为空白基底，其他区域为全覆盖薄膜)。
具体实施方式
应该指出，以下详细说明都是例示性的，旨在对本申请提供进一步的说明。除非另有指明，本文使用的所有技术和科学术语具有与本申请所属技术领域的普通技术人员通常理解的相同含义。
正如背景技术所述，二硒化钯晶圆的制备方法主要有以下几种机械剥离法、脉冲激光沉积法和化学气相沉积法。此外，申请号为201810102885.4的专利通过将纯硒和纯钯按反应比例以蒸发的方式生成硒原子和钯原子后沉积至基座上，硒原子和钯原子在基座上发生反应，形成原子组成的二维有序晶态薄膜层。上述反应需要连续的进行钯蒸气和硒蒸气的提供，钯和硒的原料只有极少部分沉积到基底，绝大部分会吸附到反应腔室内壁或被真空泵抽取至下游，具有原料利用率低的缺点。
基于此，本发明提供一种二硒化钯的制备方法。利用钯金属膜和硒分子膜在基板的预沉积，通过一次等离子体活化热退火，由于反应温度未达到硒的气化点，不会造成预沉积原料的蒸发或损失，具有高效利用原料的优点。制备得到的二硒化钯性的光电性能更优异。
为了使得本领域技术人员能够更加清楚地了解本申请的技术方案，以下将结合具体的实施例详细说明本申请的技术方案。
本发明实施例中所用的试验材料均为本领域常规的试验材料，均可通过商业渠道购买得到。
实施例1：
利用如图1所示的技术制备二硒化钯材料：
(1)利用真空蒸发镀膜方法在2英寸单晶硅/二氧化硅晶圆上沉积1nm金属钯薄膜；真空镀膜方法为电子束蒸发镀膜，蒸发速率为0.3nm/s；
(2)将1.2g的硒粉末分散在10mL苯甲醚中，超声处理3h，形成浓度为0.12g/mL硒分子分散液；在上述金属钯薄膜表面上利用匀胶机在550r/min条件下旋涂硒分子膜，经55℃干燥，形成90nm硒分子薄膜；
将上述材料置于卧式管式炉中，在氮气保护下，等离子的功率为100W辅助电阻丝加热，以50℃/min升温至400℃，退火10min，得到二硒化钯薄膜。
(3)在二硒化钯材料表面利用匀胶机，在钯薄膜的表面旋涂PC溶液，干燥后得到一层聚碳酸酯(PC)薄膜；旋涂的速度为1200rpm；PC溶液是PC与三氯甲烷混合得到的，PC溶液的浓度为10wt％。
将上述材料在80℃的水浴加热下，浸泡在0.2mol/L的氢氧化钠溶液中，获得脱落并漂在溶液表面的PC-二硒化钯薄膜。
将上述PC-二硒化钯薄膜用新基板(例如透射电镜铜网)舀起，获得在新基板上的转移，用热丙酮(75℃水浴)将PC溶解，得到二硒化钯薄膜。
得到的二硒化钯薄膜光学显微镜、拉曼光谱、透射电镜显微图片和X射线光电子能谱如图2所示：图2(1)所示的光学显微镜图，右上的三角形灰色区域为空白基底，其他的区域为二硒化钯薄膜，光学对比度显示的高均匀度；图2(2)所示的拉曼光谱，显示了两个峰位143cm-1和256cm-1，所对应的是二硒化钯的A1 g和A3 g的振动模式，证实了二硒化钯的合成。图2(3)所示的透射电镜图像，显示了二硒化钯的高结晶质量。图2(4～5)所示的X射线光电子能谱展示了Pd 3d的两个峰位以及Se 3d的峰位，与二硒化钯的峰位一致，证实了准确化学计量比的二硒化钯的合成。
实施例2
利用如图1所示的技术制备二硒化钯材料：
(1)利用真空溅射镀膜方法在4英寸单晶钛酸锶晶圆上沉积8nm金属钯薄膜；真空镀膜方法为电子束蒸发镀膜，蒸发速率为0.6nm/s；
(2)将3g的硒粉末分散在6mL乙醇中，超声处理6h，形成浓度为0.5g/mL硒分子分散液；在上述金属钯薄膜表面上利用旋涂仪在1500r/min条件下旋涂硒分子膜，经70℃干燥，形成65nm硒分子薄膜；
将上述材料置于卧式管式炉中，在氮气保护下，等离子的功率为500W辅助电阻丝加热，以50℃/min升温至400℃，退火2min，得到二硒化钯薄膜。
(3)在二硒化钯材料表面利用匀胶机，在钯薄膜的表面旋涂PC溶液，得到一层聚碳酸酯(PC)薄膜；旋涂的速度为800rpm；PC溶液是PC与三氯甲烷混合得到的，PC溶液的浓度为10wt％。
将上述材料在50℃的水浴加热下，浸泡在0.8mol/L的氢氧化钠溶液中，获得脱落并漂在溶液表面的PC-二硒化钯薄膜。
将上述PC-二硒化钯薄膜用新基板(例如透射电镜铜网)舀起，获得在新基板上的转移，用热丙酮(40℃水浴)将PC溶解，得到二硒化钯薄膜。
得到的二硒化钯薄膜光学显微镜、拉曼光谱、透射电镜显微图片和X射线光电子能谱如图2所示。
实施例3
利用如图1所示的技术制备二硒化钯材料：
(1)利用金属真空镀膜方法在6英寸单晶石英圆片上沉积30nm金属钯薄膜；真空镀膜方法为电子束蒸发镀膜，蒸发速率为0.8nm/s；
(2)将6g的硒粉末分散在5mL乙醇中，超声处理10h，形成浓度为1.2g/mL硒分子分散液；在上述金属钯薄膜表面上利用旋涂仪在2800r/min条件下旋涂硒分子膜，经95℃干燥，形成20nm硒分子薄膜；
将上述材料置于卧式管式炉中，在氮气保护下，等离子的功率为300W辅助电阻丝加热，以50℃/min升温至400℃，退火6min，得到二硒化钯薄膜。
(3)在二硒化钯材料表面利用匀胶机，在钯薄膜的表面旋涂PC溶液，得到一层聚碳酸酯(PC)薄膜；旋涂的速度为1000rpm；PC溶液是PC与二氯甲烷混合得到的，PC溶液的浓度为10wt％。
将上述材料在65℃的水浴加热下，浸泡在0.5mol/L的氢氧化钠溶液中，获得脱落并漂在溶液表面的PC-二硒化钯薄膜。
将上述PC-二硒化钯薄膜用新基板(例如透射电镜铜网)舀起，获得在新基板上的转移，用热丙酮(55℃水浴)将PC溶解，得到二硒化钯薄膜。
得到的二硒化钯薄膜光学显微镜、拉曼光谱、透射电镜显微图片和X射线光电子能谱如图2所示。
对比例1
与实施例3的区别在于：仅通过电阻丝加热退火，加热温度为500℃，时间为30min。
对比例2
与实施例3的区别在于：仅通过等离子体处理进行退火，时间为30min。仅通过等离子体处理进行退火，所得的薄膜进行表征没有出现二硒化钯的特征，所以未实现硒化反应，不能合成二硒化钯。
试验例
将实施例3和对比例1～2制备的二硒化钯薄膜利用光刻、氧等离子体刻蚀、图案化以及电极制备等常规半导体工艺，分别构筑了常规的光电探测器和场效应晶体管。
其中，场效应晶体管的构筑，用于电子迁移率测试参照Self-TerminatingConfinement Approach for Large-Area Uniform Monolayer Graphene Directly overSi/SiOx by Chemical Vapor Deposition ACS Nano.2017；11(2):1946-1956.中的方法。
光电探测器的构筑，用于测试光电响应、周期等参照A wafer-scale two-dimensional platinum monosulfide ultrathin film via metal sulfurization forhigh performance photoelectronicsMater Adv.2022；3(3):1497-1505.中的方法。
实施例3：将所制备的二硒化钯薄膜，利用光刻、氧等离子体刻蚀、图案化以及电极制备等常规半导体工艺，分别构筑了常规的光电探测器和场效应晶体管。其中，二硒化钯基光电探测器的光响应率可达40mA/W，光响应周期的升起时间为0.12s，下降时间为0.10s；二硒化钯基场效应晶体管的电子迁移率为200cm2/V/s。
对比例1：光响应率可达18mA/W，光响应周期的升起时间为0.56s，下降时间为0.72s；其场效应晶体管的电子迁移率为16cm2/V/s。
以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。
Claims (10)
1.一种二硒化钯的制备方法，其特征在于，包括以下步骤：
(1)在基底表面进行钯金属镀膜，得到基底/钯薄膜；
(2)在基底/钯薄膜的表面旋涂含硒分散液，干燥后在保护气氛中，利用等离子体辅助热退火制备得到二硒化钯薄膜。
2.根据权利要求1所述的制备方法，其特征在于，步骤(1)中，所述镀膜为电子束蒸发镀膜、电阻热蒸发镀膜或者磁控溅射镀膜。
3.根据权利要求1所述的制备方法，其特征在于，步骤(1)中，所述基底为单晶硅/二氧化硅、单晶钛酸锶或单晶石英。
4.根据权利要求1所述的制备方法，其特征在于，步骤(1)中，所述钯薄膜的厚度为1-30nm。
5.根据权利要求1所述的制备方法，其特征在于，步骤(2)中，所述含硒分散液是将硒分散于溶剂中得到的，所述溶剂为苯甲醚或乙醇；所述含硒分散液的浓度为0.12～1.2g/mL。
6.根据权利要求1所述的制备方法，其特征在于，步骤(2)中，所述旋涂的速度为550-2800r/min；所述旋涂的速度为20-90nm；所述干燥的温度为55-95℃。
7.根据权利要求1所述的制备方法，其特征在于，步骤(2)中，所述保护气氛为氢气气氛、氮气气氛或者真空气氛。
8.根据权利要求1所述的制备方法，其特征在于，步骤(2)中，所述等离子的功率为100-500W；所述退火的温度为400℃，退火的时间为2-10min。
9.根据权利要求1所述的制备方法，其特征在于，所述制备方法还包括：将步骤(2)得到的二硒化钯薄膜转移至目标基底的步骤。
10.根据权利要求9所述的制备方法，其特征在于，在步骤(2)得到的二硒化钯薄膜的表面附着一层聚碳酸酯薄膜，采用碱刻蚀使基底脱落，将剩余的二硒化钯/聚碳酸酯薄膜转移到目标基底上，用溶剂溶解聚碳酸酯薄膜，得到附着在目标基底上的二硒化钯薄膜。
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