CN115070975A - Large-size silicon wafer diamond wire cutting device and method - Google Patents
Large-size silicon wafer diamond wire cutting device and method Download PDFInfo
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- CN115070975A CN115070975A CN202210837166.3A CN202210837166A CN115070975A CN 115070975 A CN115070975 A CN 115070975A CN 202210837166 A CN202210837166 A CN 202210837166A CN 115070975 A CN115070975 A CN 115070975A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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Abstract
The invention provides a large-size silicon wafer diamond wire cutting device and a method. According to the method, the pressure borne by the cut silicon rod, the wire saw speed of the wire mesh for cutting the silicon rod and the offset angle of the swinging mechanism in the vertical direction are monitored in real time, the stress condition and the vibration condition of the wire mesh, abutted by the cut silicon rod and the swinging mechanism and the main roller, are analyzed, the warping degree and the total thickness deviation of the cut large-size silicon wafer which are optimal under the condition of stable vibration, namely constant amplitude variation are determined, the stable amplitude can be ensured, the vibration reduction effect is achieved, the large-size silicon wafer obtained by production cutting can be ensured to meet the production standard, the yield is improved, the probability of producing defective products in the cutting process is reduced, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of large-size silicon wafer cutting, and particularly relates to a large-size silicon wafer diamond wire cutting device and method.
Background
With the increasingly severe energy crisis in the global scope and the rapid development of international green energy engineering, the solar photovoltaic power generation has been internationally recognized due to the characteristics of environmental protection, cleanness, safety, gradual reduction of cost and the like, and becomes a key point of competitive development of countries in the world, and the development and utilization of the solar photovoltaic power generation are effective ways for finally solving the problems of shortage of conventional energy, particularly petrochemical energy, environmental pollution, greenhouse effect and the like. In recent years, although the solar photovoltaic power generation industry has been developed vigorously, large-scale utilization of solar cells is still difficult to start in a short period of time, the cost problem is always a bottleneck restricting large-scale application of solar cells, and the power generation cost of the solar cells needs to be close to the cost of a conventional power generation mode to really enable solar energy to become an alternative energy source. Therefore, the innovation and breakthrough of the technology are realized, the cheap and efficient new generation solar cell is developed, and the urgent task is presented to us. The large-size silicon wafer can reduce the cost for producing the solar cell, and the manufacturing of the large-size silicon wafer mainly comprises a crystal sound field, the cutting of a monocrystalline silicon rod (or the squaring of a polycrystalline silicon ingot), the inspection of the silicon rod, the cutting and grinding of the silicon rod, the slicing of the silicon rod, the cleaning of the silicon wafer and the sorting and packaging of the silicon wafer. In the process of slicing a silicon rod, a large-size silicon wafer multi-wire cutting or inner circle cutting technology is generally adopted, a large-size silicon wafer diamond wire cutting device disclosed in Chinese patent CN212826177U is often adopted for multi-wire cutting, but a wire mesh formed by diamond wires can generate vibration, CN203957173U discloses a vibration damper of a silicon wafer multi-wire cutting machine and the silicon wafer multi-wire cutting machine, which mainly adopt two vibration dampers parallel to the axis of a main roller respectively arranged between two parallel main rollers, and through the interaction of an elastic part and a supporting part of the vibration dampers, a roller is abutted against the diamond wire mesh, so that part of vibration generated by the diamond wires during high-speed movement is absorbed by the elastic part, and further the probability that the diamond wires are picked out from a guide wheel groove (namely an annular cutting groove on the main roller) is reduced, and the problem of wire jumping is solved.
The damping device cannot accurately determine the cutting speed of the diamond wire net and the tension between the main rollers (or between the main rollers and the roller of the damping device) during cutting only by the action of the mechanical structure on the diamond wire net, the cut silicon rod and the main rollers, and further cannot accurately adjust the vibration of the diamond wire net in the large-size silicon wafer diamond wire cutting device, so that the low yield of the cutting of the large-size silicon wafers and the condition of wire jumping are reduced.
Disclosure of Invention
Aiming at the defects, the invention provides a large-size silicon wafer diamond wire cutting device and a method. According to the invention, the pressure borne by the cut silicon rod, the wire saw speed of the wire net for cutting the silicon rod and the offset angle of the swinging mechanism in the vertical direction are monitored in real time, the stress condition and the vibration condition of the wire net for butting the cut silicon rod with the swinging mechanism and the main roller are analyzed, the warping degree and the total thickness deviation of the cut large-size silicon wafer which are optimal under the condition of stable vibration, namely constant amplitude variation quantity are determined, the stable amplitude can be ensured, the vibration reduction effect is achieved, meanwhile, the large-size silicon wafer obtained by production cutting can be ensured to accord with the production standard, the finished product rate is improved, the probability of generating defective products in the cutting process is reduced, and the production efficiency is improved
The invention provides the following technical scheme: the large-size silicon wafer diamond cutting device comprises a case and a lifting mechanism arranged on the upper part of the case, wherein a pressure sensor for monitoring the pressure on a cut silicon rod in real time is arranged on the lower part of the lifting mechanism, a three-roller cutting mechanism is arranged in the case, a pay-off mechanism is arranged on one side outside the case, a take-up mechanism is arranged on the other side, a linear velocity sensor is arranged at the end part of the pay-off mechanism, a swing mechanism for adjusting the angle of the diamond wire for cutting the silicon rod is also arranged in the case, and the diamond wire is wound on the three-roller cutting mechanism to form a wire mesh for cutting the silicon rod; the swinging mechanism is also provided with an angle sensor for monitoring the swinging deflection angle of the swinging mechanism relative to the vertical direction in real time and a tension sensor for monitoring the tension applied to the diamond wire, and the rear part of the case is also provided with a large-size silicon wafer detection device for detecting the warping degree and the total thickness deviation of the large-size silicon wafer obtained by cutting in real time; the lifting mechanism, the paying-off mechanism, the take-up mechanism, the motor for driving the main roller, the hydraulic cylinder for driving the swing mechanism, the pressure sensor, the angle sensor, the tension sensor and the large-size silicon wafer detection device are all connected with a single chip microcomputer through electric signals.
Furthermore, the swing mechanism comprises two fixed shafts fixedly arranged at two sides of the case, the fixed shaft is rotatably sleeved with a swinging plate, the swinging plate is provided with a first sliding chute, the first sliding chute is slidably sleeved with a second limiting column, a fixed base is fixedly arranged on one side of the case, the hydraulic cylinder is fixedly sleeved on the fixed base, the output end of the hydraulic cylinder is fixedly sleeved with a first limiting sleeve, the first limiting sleeve and the second limiting column are fixedly sleeved on two sides of the first chute, two movable shafts which penetrate through the case and extend to one side of the case are rotatably sleeved on the two swinging plates, the movable shaft is fixedly sleeved with a swing guide roller, both sides of the case are fixedly provided with first limit posts, one end of the first limiting sleeve is provided with an extension section, and a second sliding groove matched with the first limiting column is formed in the extension section.
Furthermore, the take-up mechanism and the pay-off mechanism wind the diamond wire winding displacement on the three-roller cutting mechanism and the swing mechanism through the diamond wire winding displacement device; the diamond wire arranging device comprises a first roller, a second roller and a third roller which are sequentially connected and are mutually perpendicular to the planes of the first roller, the second roller and the third roller.
The invention also provides a large-size silicon wafer diamond cutting method adopting the device, which comprises the following steps:
s1, the paying-off mechanism pays out diamond wires, and the diamond wires are sequentially wound to three main rollers of the three-roller cutting mechanism for a plurality of circles to form a wire mesh which is abutted against the lower part of the swinging mechanism and the lower part of the cut silicon rod;
s2, driving the lifting mechanism to move the silicon rod to be cut downwards to be abutted against the wire mesh, and starting the motor to drive the diamond wires in the wire mesh to move along the annular cutting grooves on the main rollers of the three-roller cutting mechanism; the width, length and height directions of the silicon rod are respectively set as three-dimensional coordinate systems of an x axis, a y axis and a z axis, and the single chip microcomputer controls the pressure sensor to monitor the pressure p between the silicon rod and a wire net formed by diamond wires in real time t Controlling the tension F borne by the diamond wire monitored by the tension sensor in real time, and controlling the wire saw speed V of the wire saw cutting the silicon rod by the diamond wire monitored by the linear velocity sensor in real time t And controlling the angle sensor to monitor the deflection angle beta of the swing mechanism along the z-axis direction in real time t And simultaneously driving the hydraulic cylinder to reciprocate along the width direction of the cut silicon rod so as to drive the swinging mechanism which is abutted against the wire mesh and the cut silicon rod to reciprocate along the width direction of the cut silicon rod, thereby reducing the on-line cutting of the diamond wireThe length of the section directly receiving the reaction force of the silicon material in the cutting process;
and S3, controlling the large-size silicon wafer detection device by the single chip microcomputer to detect whether the large-size silicon wafer obtained by cutting is qualified or not and controlling the take-up mechanism to take up the wire.
Further, the method for detecting whether the large-size silicon wafer is qualified by the large-size silicon wafer detection device comprises the following steps:
s301, calculating tangential force moment of inertia I borne by each silicon wafer unit of angular points of large-size silicon wafer m And normal force moment of inertia I n Further obtaining a total inertia moment I;
s302, monitoring the pressure p between the silicon rod and the wire mesh formed by the diamond wires in real time according to the step S2 t Calculating the displacement of a plurality of silicon wafers which are formed by the silicon rod cut along the z axis and an xz plane to the jth silicon wafer unit of each silicon wafer under the action of a tangential force and a normal force;
s303, constructing a total amplitude change stabilization model generated by corner points of the large-size silicon wafers obtained after the silicon rod is cut, cutting the silicon rod under the condition of stable amplitude change, and detecting warping degrees and total thickness deviation indexes of the obtained large-size silicon wafers;
s304, judging whether the warping degree of the large-size silicon wafer obtained by cutting is smaller than a warping degree threshold value and whether the total thickness deviation TTV is smaller than a total thickness deviation threshold value; if both are true, the wire saw speed and the offset angle beta are used t Cutting large-size silicon wafers by the angle alpha of the deviation of the thread grooves on the three main rollers where each diamond wire is located in the wire mesh, wherein the three main rollers are parallel to each other, otherwise, repeating the steps S301-S303, and adjusting the linear moment speed of the diamond wires and the deviation angle beta of the swinging mechanism in real time t (ii) a The warp threshold is 35 μm and the total thickness variation is 20 μm.
Further, the tangential force moment of inertia I to which each silicon wafer unit is subjected is calculated in the step S102 m The formula of (1) is as follows:
normal force moment of inertia I borne by each silicon wafer unit of angular point of large-size silicon wafer n The formula of (1) is as follows:
the total moment of inertia I is calculated as follows:
where m is a wavelength of a transverse vibration generated in the x-axis direction within one vibration period T, n is a wavelength of a longitudinal vibration generated in the z-axis direction within one vibration period T, c 1 The velocity of the vibration wave being a transverse vibration generated in the direction of the x-axis, c 2 I is an imaginary number, sgn (·) is a step function, W is a width of the cut silicon rod in the x-axis direction, and H is a height of the cut silicon rod in the z-axis direction.
Further, the vibration wave velocity c of the lateral vibration generated in the x-axis direction 1 The calculation formula of (a) is as follows:
the vibration wave velocity c of the longitudinal vibration generated along the z-axis direction 2 The calculation formula of (c) is as follows:
wherein E is the elastic modulus of the diamond wire, ρ 2 Is the density of the diamond wire.
Further, the step S302 includes the steps of:
s3021, monitoring the swing mechanism edge according to the step of S2Deflection angle beta in z-axis direction t And the fretsaw speed V of the diamond wire to perform fretsaw cutting on the silicon rod t And the offset angle of the thread groove on the main roller where each diamond wire in the wire mesh is parallel to each other along the x axis is alpha, and the excitation amplitude A caused by the vibration of the wire mesh formed by the diamond wires is calculated t ：
A t ＝p t ×exp i(k(sinβcosα+sinβsinα)-ωt)
Wherein i is an imaginary number, k is a wave number of a vibration wave generated by vibration of a wire mesh formed of the diamond wire, ω is an angular frequency of the vibration wave generated by vibration of the wire mesh formed of the diamond wire, and ω is 2 π V t ；
S3022, calculating the modal pressure applied to the jth silicon chip unit, which is in contact with the swing mechanism, of the cut silicon rod
Wherein the three-dimensional coordinate of the jth silicon chip unit in the established three-dimensional coordinate system at the moment t is
S3023, calculating the modal pressure of the jth silicon chip unit, which is contacted with the swing mechanism, of the cut silicon rod
Total vibration displacement generated by coupling of transverse vibration along x-axis and longitudinal vibration along z-axis
Wherein the content of the first and second substances,ω n the natural frequency of the wire web formed for the diamond wire, ρ is the density of the silicon rod being cut, C D Is the equivalent viscous damping constant of the ejected mortar;
s3024, calculating the displacement of the plurality of silicon wafers which are cut along the z-axis and form the xz plane to the jth silicon wafer unit of each silicon wafer under the action of tangential force and normal force according to the calculation result of the step S3023
Further, the natural frequency ω of the wire mesh formed by the diamond wires n The calculation formula of (a) is as follows:
wherein E is the elastic modulus of the diamond wire.
Further, the model for stabilizing the total amplitude variation generated by the corner points of the large-size silicon wafer obtained after the silicon rod constructed in step S303 is cut is as follows:
wherein E is the elastic modulus of the diamond wire,
forming a plurality of silicon wafers which are cut along the z axis and form an xz plane for the silicon rod cut along the z axis obtained by the calculation in the step S302, wherein the displacement is generated on the jth silicon wafer unit of each silicon wafer under the action of tangential force and normal force, rho is the density of the cut silicon rod, and B t The total amplitude variation generated for the jth silicon chip unit at the corner point of the cut large-size silicon chip, i is an imaginary number, and omega is 2 pi V t 。
The invention has the beneficial effects that:
1. according to the invention, the swinging mechanism is arranged, the hydraulic cylinder drives the diamond wire to continuously deflect under the matching of the elastic device through the swinging guide roller, so that the cutting points of the diamond wire and the silicon rod keep moving, and the silicon rod is cut in an approximately arc-shaped cutting path, thereby reducing the length of a section of the diamond wire directly subjected to the reaction force of a silicon material in the cutting process, reducing the working loads of the diamond wire and the driving motor, reducing the rising amplitude of the heat productivity of the driving motor and the diamond wire, prolonging the service lives of the diamond wire and the driving motor, and ensuring the cutting effect of the diamond wire.
2. According to the invention, the swing mechanism 6 is arranged between the main roller and the cut silicon rod, so that the length of the reaction force between the cut silicon rod and the main roller can be reduced, the contact part of the large-size silicon wafer cut by the cut silicon rod and the swing mechanism is decomposed into a single silicon wafer unit, the reaction force of the swing mechanism traction wire net received by the single silicon wafer unit on the cutting force generated by the single silicon wafer unit is a tangential force and a normal force, a stable model of the total amplitude change generated by the angular points of the large-size silicon wafer cut by the silicon rod is constructed, the stable vibration can be obtained, and the total amplitude change B generated by the jth silicon wafer unit at the angular points of the cut large-size silicon wafer is stable t Wire saw speed V for cutting of wire web while stationary t And an offset angle beta t And further judging whether the large-size silicon wafer cut under the parameter meets the conditions of being smaller than a warping degree threshold and being smaller than a Total Thickness Variation (TTV) threshold, if so, the method not only can ensure that the amplitude is stable under the parameter, namely, the vibration damping effect is achieved, but also can ensure that the large-size silicon wafer cut by production meets the production standard, the yield is improved, the probability of producing defective products in the cutting process is reduced, and the production efficiency is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
FIG. 1 is a schematic perspective view of a large-size silicon wafer diamond wire cutting device according to the present invention;
FIG. 2 is a schematic view of an assembled three-dimensional structure of the case and the lifting mechanism of the present invention;
FIG. 3 is a front view of a large-sized silicon wafer diamond cutting device provided by the present invention;
FIG. 4 is a schematic perspective view of the swing member of the present invention;
FIG. 5 is a schematic diagram of a three-dimensional coordinate system formed by the present invention with the straight lines of the silicon rod to be cut along the x-axis, the y-axis and the z-axis;
fig. 6 is a graph showing the force condition of the oscillating mechanism shown in fig. 2 for the cut corner point of the silicon rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the diamond cutting device for large-size silicon wafers provided by the invention comprises a chassis 1 and a lifting mechanism 2 mounted on the upper part of the chassis 1, wherein the lifting mechanism 2 can be a hydraulic oil cylinder, a push rod motor and the like in the prior art, a crystal support is arranged on the lower part of the lifting mechanism 2 and is used for clamping a silicon rod which is not cut, a pressure sensor for monitoring the pressure applied to the cut silicon rod in real time is arranged on the crystal support on the lower part of the lifting mechanism 2, a three-roller cutting mechanism 3 is arranged in the chassis 1, as shown in fig. 2, a pay-off mechanism 4 is arranged on one side outside the chassis 1, a take-up mechanism 5 is arranged on the other side, a linear velocity sensor 41 is arranged at the end part of the pay-off mechanism 4, the three-roller cutting mechanism 2 comprises a first main roller 31, a second main roller 32 and a third main roller 33 which are uniformly distributed at three angular points of a triangle, the triangle is an isosceles triangle in which the first main roller and the second main roller 32 are axisymmetric about the third main roller 33, that is, the axis of the third main roller 33 is located on the axial symmetry line of the axis of the first main roller 31 and the second axis 32, and is located below the first main roller 21 and the second main roller 22, preferably, the triangle is an equilateral triangle, the axis of the first main roller 31 is parallel to the axis of the second main roller 32 and is located on the horizontal plane with the same height, as shown in fig. 1, a swing mechanism 6 for adjusting the angle of the diamond wire for cutting the silicon rod is further arranged in the case 1, as shown in fig. 2, a movable groove 602 adapted to the swing mechanism 6 is arranged on the side wall of the case 1, as shown in fig. 5, and the same technique is adopted in the large-size silicon wafer diamond wire cutting device disclosed in the chinese patent of the prior art CN212826177U, the diamond wire is sequentially wound around the cutting mechanism 3 by the pay-off mechanism 4 to form a wire mesh for cutting the silicon rod by the first main roller 31, the second main roller 32 and the third main roller 33, as shown in fig. 3, the diamond wire wound between the third main roller 33 and the first main roller 32 is abutted against the swing mechanism 6; an angle sensor for monitoring the swinging deflection angle of the swinging mechanism 6 relative to the vertical direction in real time and a tension sensor for monitoring the tension applied to the diamond wire are also arranged on the swinging mechanism 6, and a large-size silicon wafer detection device 7 is also arranged at the rear part of the case 1 and is used for detecting the warping degree and the total thickness deviation of the large-size silicon wafer obtained by cutting in real time; the lifting mechanism 2, the paying-off mechanism 3, the take-up mechanism 4, the motor 601 for driving the main roller, the hydraulic cylinder 8 for driving the swing mechanism, the pressure sensor, the angle sensor, the tension sensor and the large-size silicon wafer detection device are all connected with a single chip microcomputer through electric signals.
And a cutting fluid spraying device is arranged above the first main roller 31 and the second main roller 32 of the three-roller cutting mechanism 2 and is used for spraying mortar with components including SiC particles and other components, and is used for assisting diamond wires on a wire mesh to increase the friction force on the silicon rod and cutting the silicon rod.
As shown in fig. 4, as a preferred embodiment of the present invention, the swing mechanism 6 includes two fixed shafts 60 fixedly installed on two sides of the chassis 1, a swing plate 61 is rotatably sleeved on the fixed shafts 60, a first sliding groove 62 is formed on the swing plate 61, a second limiting post 63 is slidably sleeved in the first sliding groove 62, a fixed base 64 is fixedly installed on one side of the chassis 1, the hydraulic cylinder 8 is fixedly sleeved on the fixed base 64, an output end of the hydraulic cylinder 8 is fixedly sleeved with a first limiting sleeve 65, the first limiting sleeve 65 and the second limiting post 63 are fixedly sleeved on two sides of the first sliding groove 62, two movable shafts 66 penetrating through the chassis 1 and extending to one side of the chassis 1 are rotatably sleeved on the two swing plates 61, a swing guide roller 67 is fixedly sleeved on the movable shaft 66, first limiting posts 68 are fixedly installed on two sides of the chassis 1, one end of the first limiting sleeve 65 is provided with an extending section, and a second sliding groove 69 adapted to the first limiting post 68 is formed on the extending section. The two oscillating guide rollers 69 form a multi-stage interference with the wire mesh formed by the diamond wires along the length direction of the cut silicon rod; the tension sensor is arranged on the swing guide roller 69 and is provided with a tension sensor for monitoring the tension F of the diamond wire contacted with the swing guide roller 69 in real time, the movable shaft 66 is positioned in the movable groove 602,
the operation principle of the swing mechanism 6 is that when the swing mechanism 6 works, a box door is opened, a support plate adhered with a silicon rod is lifted to a height equal to the output end of the lifting mechanism 2 through the lifting device outside the box 1, then the support plate is pushed into the box 1 through a feed inlet to be fixedly sleeved with the output end of the lifting mechanism 2, then the driving motor 601 is started, the lifting mechanism 5, the support plate and the bonding plane drive the silicon rod to move downwards, meanwhile, the hydraulic cylinder 8 is started, the hydraulic cylinder 8 drives the second limit column 63 to do reciprocating linear motion through the first limit sleeve 65, the second limit column 63 drives the swing plate 61 to do reciprocating rotation under the limit of the fixed shaft 60 through the first sliding groove 62, further, the swing guide roller 67 is driven by the movable shaft 66 to do reciprocating deflection motion, the swing guide roller 67 drives the diamond wire to continuously deflect under the cooperation of the elastic device, and the cutting point of the diamond wire and the silicon rod keeps moving, and the silicon rod is cut by the approximate arc-shaped cutting path, so that the length of a direct silicon material reaction force section of the diamond wire in the cutting process is reduced, the working load of the diamond wire and the driving motor 601 is reduced, the rising range of the heating amount of the driving motor 601 and the diamond wire is reduced, the service lives of the diamond wire and the driving motor 601 are prolonged, and the cutting effect of the diamond wire is guaranteed.
When the hydraulic cylinder 8 drives the first limiting sleeve 65 to move through the second sliding groove 69 matched with the first limiting column 68, the first limiting sleeve 65 and the first limiting column 68 slide relatively in the second sliding groove of the first limiting sleeve 65, the first limiting sleeve 65 is supported and limited through the first limiting column 68, namely, the sliding distance of the first limiting column 68 in the first limiting sleeve 65 is only limited to the size of the pore length of the second sliding groove 69, the first limiting sleeve 65 is prevented from being influenced by the reaction force of the oscillating plate 61 through the second limiting column 63 to deflect excessively, the precision is reduced after the long-time use, and the cutting stability of the silicon rod is influenced.
As shown in fig. 3, as another preferred embodiment of the present invention, the take-up mechanism 5 and the pay-off mechanism 4 wind the diamond wire winding on the three-roller cutting mechanism 3 and the swing mechanism 6 through the diamond wire winding device 9; the diamond wire arranging device 9 includes a first roller 91, a second roller 92 and a third roller 93 which are connected in sequence and are perpendicular to each other in the plane thereof. As shown in fig. 5, the width, length and height directions of the silicon rod are set as three-dimensional coordinate systems of the x axis, the y axis and the z axis respectively, the first roller 91 and the second roller 92 are disposed right above the third roller 93, the plane of the third roller 93 is parallel to the xz plane formed by the x axis and the z axis of the cut silicon rod, the plane of the second roller 92 is parallel to the xy plane formed by the x axis and the y axis of the silicon rod, and the plane of the first roller 91 is parallel to the yz plane formed by the y axis and the z axis of the silicon rod. As in the diamond wire cutting device for large-size silicon wafers disclosed in the chinese patent CN212826177U in the prior art, when the diamond wire is wound around each main roller, the xy plane is offset by a certain angle α with respect to the x axis, but not parallel to the x axis, the diamond wire is wound around the first main roller 31 through the first roller 91, the second roller 92 and the third roller 93 of the diamond wire winding device 9 connected to the paying out mechanism 4 in sequence after being paid out by the paying out mechanism 4, then wound around the second main roller 32 and the third main roller 33 respectively and then abutted against the two swinging guide rollers 69 of the swinging mechanism, then returned to the first main roller 31 again, wound around the annular cutting grooves on the three main rollers, which are offset by a certain angle α with respect to the x axis on the y plane, to form a wire mesh, and finally wound around the third main roller 33 and then not abutted against the two swinging guide rollers 69 of the swinging mechanism again, and is returned to the first main roller 31 again, and is returned to the take-up 5 through the third roller 93, the second roller 92 and the first roller 91 of the diamond wire arranging device connected to the take-up mechanism 5 in order.
Preferably, the large-size silicon wafer diamond wire cutting device provided by the invention is also provided with a cooling liquid spraying device shown in CN 114633387A, the cooling liquid spraying device is arranged on the horizontal height parallel to a clamping part for clamping the silicon rod by the lifting mechanism and is parallel to the cut plane of the silicon rod, and then the sprayed cooling liquid is vertically sprayed to the plane of the large-size silicon wafer obtained by cutting along the y-axis direction, so that the cooling is effectively carried out, and the probability of cracks and wire marks is reduced. In silicon rod cutting process, coolant liquid spray set can spray the coolant liquid to quick-witted case 1 in, shelter from movable groove 602 through the backplate, avoid the coolant liquid to sputter outside quick-witted case 1 through movable groove 602, cause the waste of external pollution and coolant liquid, increase the area of contact of backplate and loose axle 66 through second stop collar 20, guarantee backplate and loose axle 66's joint strength, the curved surface through the backplate reflects the coolant liquid, make the coolant liquid sputter to swing deflector roll 18 and cutting deflector roll 2 on, improve the utilization ratio of coolant liquid, guarantee the cooling effect of diamond wire on swing deflector roll 67 and the home roll 2.
The invention also provides a large-size silicon wafer diamond cutting method adopting the device, which comprises the following steps:
s1, the paying-off mechanism 4 releases diamond wires, and the diamond wires are sequentially wound to a plurality of circles of a first main roller 21, a second main roller 22 and a third main roller 23 of three main rollers of the three-roller cutting mechanism 3 to form a wire net which is abutted against the lower part of the swinging mechanism 6 and the lower part of the cut silicon rod;
s2, driving the lifting mechanism 2 to move the silicon rod to be cut downwards to be abutted against the wire mesh, and starting the motor 601 to drive the diamond wires in the wire mesh to move along the annular cutting grooves on the main rollers of the three-roller cutting mechanism 3; the width, length and height directions of the silicon rod are respectively set as a three-dimensional coordinate system of an x axis, a y axis and a z axis, and the pressure sensor is controlled by a single chip microcomputerMonitoring the pressure p between the silicon rod and the wire mesh formed by the diamond wire t Controlling a tension sensor to monitor tension F borne by the diamond wire in real time, and controlling a linear velocity sensor to monitor fretsaw speed V of the diamond wire for carrying out fretsaw cutting on the silicon rod in real time t And controlling an angle sensor to monitor the deflection angle beta of the swing mechanism along the z-axis direction in real time t Simultaneously, the hydraulic cylinder is driven to reciprocate along the width direction of the cut silicon rod, and then the swing mechanism 6 which is abutted against the wire mesh and the cut silicon rod is driven to reciprocate along the width direction of the cut silicon rod, so that the length of a section of the diamond wire which is directly acted by a silicon material reaction force in the cutting process is reduced;
and S3, controlling the large-size silicon wafer detection device by the single chip microcomputer to detect whether the large-size silicon wafer obtained by cutting is qualified or not, and controlling the take-up mechanism 5 to take up the wire.
As a preferred embodiment of the present invention, the method for inspecting a large-sized silicon wafer by the large-sized silicon wafer inspection apparatus in the step S3 includes the steps of:
s301, calculating tangential force moment of inertia I borne by each silicon wafer unit of angular points of large-size silicon wafer m And normal force moment of inertia I n Further obtaining a total inertia moment I;
as shown in fig. 2 and 6, in the process of cutting the silicon rod, the swing mechanism 6 swings left and right along the central axis of the silicon rod of the z axis under the condition that the fixed shaft 60 is fixed, so as to continuously collide with the corner points of the silicon rod, further to prolong the length of the acting force generated by the intersection point of the main roller and the silicon rod on the xz axis plane, and reduce the acting force and the reacting force applied to each silicon wafer unit at the corner points, as shown in fig. 6, the swing mechanism 6 swings the deflection angle β to the left side, as shown in fig. 6 t Then, an upward acting force is generated on the jth silicon chip unit, the silicon chip unit generates a reaction force on the wire mesh, and the reaction force is decomposed into a tangential force F m And normal force F n Tangential force F m With tangential force moment of inertia I m Normal force F n Having a normal force moment of inertia I n ；
S302, monitoring the pressure p between the silicon rod and the wire mesh formed by the diamond wires in real time according to the step S2 t Calculated as being cut along the z-axisThe cut silicon rod forms a displacement which is generated on the jth silicon chip unit of each silicon chip under the action of tangential force and normal force with a plurality of silicon chips on an xz plane;
s303, constructing a total amplitude change stabilization model generated by corner points of the large-size silicon wafers obtained after the silicon rod is cut, cutting the silicon rod under the condition of stable amplitude change, and detecting warping degrees and total thickness deviation indexes of the obtained large-size silicon wafers;
s304, judging whether the warping degree of the large-size silicon wafer obtained by cutting is smaller than a warping degree threshold value and whether the total thickness deviation TTV is smaller than a total thickness deviation threshold value; if both are true, the wire saw speed and the offset angle beta are used t Cutting large-size silicon wafers by the angle alpha of the deviation of the thread grooves on the three main rollers where each diamond wire is positioned in the wire mesh, wherein the three main rollers are parallel to each other, otherwise, repeating the steps S301-S303, and adjusting the linear moment speed of the diamond wires and the deviation angle beta of the swing mechanism in real time t (ii) a The warpage threshold is 35 μm and the total thickness variation is 20 μm.
Further, the tangential force moment of inertia I suffered by each silicon wafer unit is calculated in the step S102 m The formula of (1) is as follows:
normal force moment of inertia I borne by each silicon wafer unit of angular point of large-size silicon wafer n The formula of (1) is as follows:
the total moment of inertia I is calculated as follows:
where m is the wavelength of the transverse vibration generated along the x-axis direction within one vibration period T, and n is the wavelength generated along the z-axis directionWavelength of longitudinal vibration within one vibration period T, c 1 The velocity of the vibration wave being a transverse vibration generated in the direction of the x-axis, c 2 The velocity of the vibration wave being the longitudinal vibration generated in the direction of the z-axis, i being an imaginary number, i.e.
sgn (·) is a step function, W is the width of the sliced silicon rod in the x-axis direction, H is the height of the sliced silicon rod in the z-axis direction, and the length of the sliced silicon rod in the y-axis direction is L. Since the wire mesh formed by the diamond wire vertically cuts the silicon rod mainly in an xz plane formed along the z-axis vertical direction with respect to the x-axis and the z-axis, a vibration wave is hardly generated in the y-axis direction, and a tangential force and a normal force along a cutting arc formed by the swing mechanism and the diamond wire are mainly formed for the plurality of silicon wafer units in the xz plane.
Further, the vibration wave velocity c of the lateral vibration generated in the x-axis direction 1 The calculation formula of (a) is as follows:
vibration wave velocity c of longitudinal vibration generated in z-axis direction 2 The calculation formula of (a) is as follows:
wherein E is the elastic modulus of the diamond wire, ρ 2 Is the density of the diamond wire.
Further, the S302 step includes the steps of:
s3021, monitoring the deflection angle beta of the swing mechanism along the z-axis direction according to the step of S2 t And the fretsaw speed V of the diamond wire to perform fretsaw cutting on the silicon rod t And the angle of deviation of the thread groove on the main roller of each diamond wire parallel to each other in the net inherent to the annular cutting groove along the x axis in the xy plane is alpha, and the excitation caused by the vibration of the net formed by the diamond wires is calculatedAmplitude of excitation A t ：
A t ＝p t ×exp i(k(sinβcosα+sinβsinα)-ωt)
Wherein i is an imaginary number, k is a wave number of a vibration wave generated by vibration of a wire mesh formed of the diamond wire, ω is an angular frequency of the vibration wave generated by vibration of the wire mesh formed of the diamond wire, and ω is 2 π V t ；
S3022, calculating the modal pressure of the j-th silicon chip unit, which is contacted with the oscillating mechanism, of the cut silicon rod
Wherein, the three-dimensional coordinate in the three-dimensional coordinate system established in the step S101 at the time t of the jth silicon wafer unit is
S3023, calculating the modal pressure of the jth silicon chip unit, which is contacted with the swing mechanism, of the cut silicon rod
Total vibration displacement generated by coupling of transverse vibration along x-axis and longitudinal vibration along z-axis
Wherein, ω is n The natural frequency of the wire web formed for the diamond wire, ρ is the density of the silicon rod being cut, C D Is the equivalent viscous damping constant of the ejected mortar;
s3024, calculating the silicon rod cut along the z-axis according to the calculation result in the step S3023The displacement of the jth silicon wafer unit of each silicon wafer generated by a plurality of silicon wafers forming an xz plane under the action of tangential force and normal force
Further, the natural frequency ω of the wire mesh formed of the diamond wires n The calculation formula of (a) is as follows:
wherein E is the elastic modulus of the diamond wire.
Further, the model for stabilizing the total amplitude change generated at the corner points of the large-size silicon wafer obtained after the silicon rod constructed in step S303 is cut is as follows:
wherein E is the elastic modulus of the diamond wire,
forming a plurality of silicon wafers of an xz plane for the silicon rod cut along the z axis and obtained by the calculation in the step S302, and generating displacement to the jth silicon wafer unit of each silicon wafer under the action of tangential force and normal force, wherein rho is the density of the cut silicon rod, and B t The total amplitude variation generated for the jth silicon chip unit at the corner point of the cut large-size silicon chip, i is an imaginary number, and omega is 2 pi V t 。
According to the silicon single crystal silicon wafer cutting device, the swinging mechanism 6 is arranged between the main roller and the cut silicon rod, so that the length of the reaction force between the cut silicon rod and the main roller can be reduced, and the reaction force between the edge of the cut silicon rod and the wire mesh contacted with the swinging mechanism 6 is decomposed into single cut silicon single crystal silicon wafer units
The tangential force and the normal force of the collided wire meshes are combined with the pressure p between the wire meshes formed by the silicon rod and the diamond wire and monitored by the pressure sensor t Speed V of wire saw for cutting wire web t And an offset angle beta t Calculating the tangential force moment and the normal force moment received by a single silicon chip unit by the offset angle alpha of the thread grooves on the three main rollers where each diamond wire is positioned and which are parallel to each other in the wire mesh along the x axis, and combining the calculated excitation amplitude A caused by the vibration of the wire mesh formed by the diamond wires t Further calculating the modal pressure of the single silicon chip unit
The j-th silicon chip unit of the cut silicon rod contacted with the swing mechanism is subjected to modal pressure
Total vibration displacement generated by coupling of transverse vibration along x-axis and longitudinal vibration along z-axis
Finally, the displacement of a plurality of silicon wafers formed by the silicon rod cut along the z axis and the xz plane to the jth silicon wafer unit of each silicon wafer under the action of tangential force and normal force is obtained
According to the displacement
A model for stabilizing the total amplitude change generated by the corner points of the large-size silicon wafer obtained after the silicon rod is cut is constructed, so that the total amplitude change B generated by the jth silicon wafer unit at the corner points of the large-size silicon wafer which is cut and can make the vibration stable can be obtained t Wire saw speed V for cutting of wire web while stationary t And an offset angle beta t Further judging the size obtained by cutting under the parameterWhether the size silicon wafer meets the conditions of being smaller than a warping degree threshold value and being smaller than a total thickness deviation (TTV) threshold value or not is judged, if yes, the stable amplitude can be ensured under the parameters, namely, the vibration reduction effect is achieved, meanwhile, the fact that the size silicon wafer obtained by production and cutting meets the production standard can be ensured, the yield is improved, the probability of producing defective products in the cutting process is reduced, and the production efficiency is improved.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. The large-size silicon wafer diamond cutting device comprises a case (1) and a lifting mechanism (2) installed on the upper portion of the case (1), wherein a pressure sensor used for monitoring the pressure on a cut silicon rod in real time is arranged on the lower portion of the lifting mechanism (2), a three-roller cutting mechanism (3) is arranged in the case (1), a pay-off mechanism (4) is arranged on one outer side of the case (1), and a take-up mechanism (5) is arranged on the other outer side of the case, and the large-size silicon wafer diamond cutting device is characterized in that a linear velocity transducer (41) is arranged at the end portion of the pay-off mechanism (4), a swinging mechanism (6) used for adjusting the angle of the diamond wire cut silicon rod is further arranged in the case (1), and the diamond wire is wound on the three-roller cutting mechanism (3) to form a wire net used for cutting the silicon rod; the swinging mechanism (6) is also provided with an angle sensor for monitoring the swinging deflection angle of the swinging mechanism relative to the vertical direction in real time and a tension sensor for monitoring the tension applied to the diamond wire, and the rear part of the case (1) is also provided with a large-size silicon wafer detection device (7) for detecting the warping degree and the total thickness deviation of the large-size silicon wafer obtained by cutting in real time; the lifting mechanism (2), the pay-off mechanism (3), the take-up mechanism (4), the motor (601) for driving the main roller, the hydraulic cylinder (8) for driving the swing mechanism, the pressure sensor, the angle sensor, the tension sensor and the large-size silicon wafer detection device are all connected with a single chip microcomputer through electric signals.
2. The large-size silicon wafer diamond cutting device according to claim 1, wherein the swing mechanism (6) comprises two fixed shafts (60) fixedly installed at two sides of the case (1), a swing plate (61) is rotatably sleeved on the fixed shafts (60), a first sliding groove (62) is formed in the swing plate (61), a second limit column (63) is slidably sleeved in the first sliding groove (62), a fixed base (64) is fixedly installed at one side of the case (1), the hydraulic cylinder (8) is fixedly sleeved on the fixed base (64), a first limit sleeve (65) is fixedly sleeved at an output end of the hydraulic cylinder (8), the first limit sleeve (65) and the second limit column (63) are fixedly sleeved at two sides of the first sliding groove (62), and two movable shafts (66) which penetrate through the case (1) and extend to one side of the case (1) are rotatably sleeved on the two swing plates (61) The swing guide roller (67) is fixedly connected to the movable shaft (66) in a fixed mode, first limiting columns (68) are fixedly mounted on two sides of the case (1), an extension section is arranged at one end of each first limiting sleeve (65), and second sliding grooves (69) matched with the first limiting columns (68) are formed in the extension section.
3. The large-size silicon wafer diamond cutting device according to claim 1, wherein the take-up mechanism (5) and the pay-off mechanism (4) wind diamond wire arrangement on the three-roller cutting mechanism (3) and the swinging mechanism (6) through a diamond wire arrangement device (9); the diamond wire arranging device (9) comprises a first roller (91), a second roller (92) and a third roller (93) which are connected in sequence and are mutually perpendicular to the plane of the first roller.
4. A large-sized silicon wafer diamond cutting method using the apparatus according to any one of claims 1 to 3, comprising the steps of:
s1, the paying-off mechanism (4) pays off diamond wires, and the diamond wires are sequentially wound to three main rollers of the three-roller cutting mechanism (3) for a plurality of circles to form a wire net which is abutted against the lower part of the swinging mechanism (6) and the lower part of the cut silicon rod;
s2, driving the lifting mechanism (2) to move the silicon rod to be cut downwards to be abutted against the wire mesh, and starting the motor (601) to drive the diamond wires in the wire mesh to move along the annular cutting grooves on the main rollers of the three-roller cutting mechanism (3); the width, length and height directions of the silicon rod are respectively set as three-dimensional coordinate systems of an x axis, a y axis and a z axis, and the singlechip controls the pressure sensor to monitor the pressure p between the silicon rod and the wire mesh formed by the diamond wire in real time t Controlling the tension F borne by the diamond wire monitored by the tension sensor in real time, and controlling the wire saw speed V of the wire saw cutting the silicon rod by the diamond wire monitored by the linear velocity sensor in real time t And controlling the angle sensor to monitor the deflection angle beta of the swing mechanism along the z-axis direction in real time t Simultaneously, the hydraulic cylinder is driven to reciprocate along the width direction of the cut silicon rod, and then the swinging mechanism (6) which is abutted against the wire mesh and the cut silicon rod is driven to reciprocate along the width direction of the cut silicon rod, so that the length of a section of the diamond wire which is directly reacted by a silicon material in the cutting process is reduced;
and S3, controlling the large-size silicon wafer detection device by the single chip microcomputer to detect whether the large-size silicon wafer obtained by cutting is qualified or not and controlling the take-up mechanism (5) to take up the wire.
5. The large-size silicon wafer diamond cutting method according to claim 4, wherein the large-size silicon wafer detection device is used for detecting whether the large-size silicon wafer is qualified or not, and comprises the following steps:
s301, calculating tangential force moment of inertia I borne by each silicon wafer unit of angular points of large-size silicon wafer m And normal force moment of inertia I n Further obtaining a total inertia moment I;
s302, monitoring the pressure p between the silicon rod and the wire mesh formed by the diamond wires in real time according to the step S2 t Calculating the displacement of a plurality of silicon wafers which are formed by the silicon rod cut along the z axis and an xz plane to the jth silicon wafer unit of each silicon wafer under the action of a tangential force and a normal force;
s303, constructing a total amplitude change stabilization model generated by corner points of the large-size silicon wafers obtained after the silicon rod is cut, cutting the silicon rod under the condition of stable amplitude change, and detecting warping degrees and total thickness deviation indexes of the obtained large-size silicon wafers;
s304, judging whether the warping degree of the large-size silicon wafer obtained by cutting is smaller than a warping degree threshold value and whether the total thickness deviation TTV is smaller than a total thickness deviation threshold value; if both are true, the wire saw speed and the offset angle beta are used t Cutting the large-size silicon wafer by the angle alpha of deviation of the thread grooves on the three main rollers where each diamond wire is located and is parallel to each other in the wire mesh along the x axis, otherwise, repeating the steps S301-S303, and adjusting the linear moment speed of the diamond wires and the deviation angle beta of the swing mechanism in real time t (ii) a The warp threshold is 35 μm and the total thickness variation is 20 μm.
6. The large-sized silicon wafer diamond cutting device according to claim 5, wherein the tangential force moment of inertia I to which each silicon wafer unit is subjected is calculated in the step S102 m The formula of (1) is as follows:
normal force moment of inertia I borne by each silicon wafer unit of angular point of large-size silicon wafer n The formula of (1) is as follows:
the total moment of inertia I is calculated as follows:
wherein m is the transverse vibration generated along the x-axis direction in a vibration period TN is the wavelength of the longitudinal vibration generated in the z-axis direction within one vibration period T, c 1 The velocity of the vibration wave being a transverse vibration generated in the direction of the x-axis, c 2 I is an imaginary number, sgn (·) is a step function, W is a width of the cut silicon rod in the x-axis direction, and H is a height of the cut silicon rod in the z-axis direction.
7. The large-sized silicon wafer diamond cutting device according to claim 6, wherein the vibration wave velocity c of the transverse vibration generated in the x-axis direction 1 The calculation formula of (a) is as follows:
the vibration wave velocity c of the longitudinal vibration generated along the z-axis direction 2 The calculation formula of (a) is as follows:
wherein E is the elastic modulus of the diamond wire, ρ 2 Is the density of the diamond wire.
8. The large-size silicon wafer diamond cutting method according to claim 6, wherein the step S302 comprises the steps of:
s3021, monitoring the deflection angle beta of the swing mechanism along the z-axis direction according to the step of S2 t And the fretsaw speed V of the diamond wire to perform fretsaw cutting on the silicon rod t And the offset angle of the thread groove on the main roller where each diamond wire in the wire mesh is parallel to each other along the x axis is alpha, and the excitation amplitude A caused by the vibration of the wire mesh formed by the diamond wires is calculated t ：
A t ＝p t ×expi(k(sinβcosα+sinβsinα)-ωt)
Wherein i is an imaginary number, and k is a diamondThe wave number of the vibration wave generated by the vibration of the wire mesh formed by the stone wire is omega, the angular frequency of the vibration wave generated by the vibration of the wire mesh formed by the diamond wire is 2 pi V t ；
S3022, calculating the modal pressure of the j-th silicon chip unit, which is contacted with the oscillating mechanism, of the cut silicon rod
Wherein the three-dimensional coordinate of the jth silicon chip unit in the established three-dimensional coordinate system at the moment t is
S3023, calculating the modal pressure of the jth silicon chip unit, which is contacted with the swing mechanism, of the cut silicon rod
Total vibration displacement generated by coupling of transverse vibration along x-axis and longitudinal vibration along z-axis
Wherein, ω is n The natural frequency of the wire web formed for the diamond wire, ρ is the density of the silicon rod being cut, C D Is the equivalent viscous damping constant of the ejected mortar;
s3024, calculating the silicon rod cut along the z axis and the silicon wafers of the xz plane generated by the j th silicon wafer unit of each silicon wafer under the action of tangential force and normal force according to the calculation result of the step S3023Displacement of
9. The large-sized silicon wafer diamond cutting method according to claim 8, wherein the natural frequency ω of the wire mesh formed of the diamond wire n The calculation formula of (a) is as follows:
wherein E is the elastic modulus of the diamond wire.
10. The large-size silicon wafer diamond cutting method according to claim 5, wherein the model for stabilizing the total amplitude variation generated at the corner points of the large-size silicon wafer obtained after the silicon rod is cut, which is constructed in the step S303, is as follows:
wherein E is the elastic modulus of the diamond wire,
forming a plurality of silicon wafers in an xz plane for the silicon rod cut along the z axis obtained by the calculation in the step S302, and generating displacement to the jth silicon wafer unit of each silicon wafer under the action of tangential force and normal force, wherein rho is the density of the cut silicon rod, and B t The total amplitude variation generated for the jth silicon chip unit at the corner point of the cut large-size silicon chip, i is an imaginary number, and omega is 2 pi V t 。
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| CN115781954B (en) * | 2022-12-02 | 2024-04-23 | 无锡展照精密机械科技有限公司 | Three main shaft three motor drive's silicon chip cutting equipment |
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