CN115061235B - InP-based heat-insulating guided wave system suitable for optical communication and millimeter wave communication - Google Patents
InP-based heat-insulating guided wave system suitable for optical communication and millimeter wave communication Download PDFInfo
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- CN115061235B CN115061235B CN202210748458.XA CN202210748458A CN115061235B CN 115061235 B CN115061235 B CN 115061235B CN 202210748458 A CN202210748458 A CN 202210748458A CN 115061235 B CN115061235 B CN 115061235B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application discloses an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, which comprises: the application can be used to connect different functional units in optical and millimeter wave communications, so that energy information can be moved in an adiabatic manner within a short distance, thereby spatially transmitting energy information from one functional unit to another functional unit, while minimizing losses.
Description
Technical Field
The application relates to the technical field of optical communication and millimeter wave communication, in particular to an InP-based heat insulation guided wave system suitable for optical communication and millimeter wave communication.
Background
The optical communication device mainly adopts indium phosphide (InP) material, and InP has become an essential semiconductor material for optoelectronic devices and microelectronic devices, and is widely used in the fields of optical communication and millimeter wave communication.
At present, the Internet adopts an optical fiber cable to realize high-speed information transmission, and only information sent by a laser manufactured by adopting an InP material can realize lossless transmission in the optical fiber. InP is a direct bandgap material, and has the advantages of high electron mobility, excellent radiation resistance, large bandwidth, high stability, and the like. The InP fundamental wave guide structure can realize lossless transmission of information in optical fiber communication and millimeter wave communication, and can be applied to large data centers of China Mobile, UNICOM, telecom, huacheng and other enterprises. InP can achieve different refractive indices to meet the requirements by controlling the combination ratio of different elements. InP-based active photonic devices, passive photonic devices, and InP-based microelectronic loops may be integrated on the same substrate ("chip"). The InP-based heat-insulating guided wave system is a connector for connecting various functional units in optical communication and millimeter wave communication, and energy information is transmitted from one functional unit to another functional unit, so that the integration level of an InP-based chip is improved, the smaller size is realized to meet the requirements of the development of new-generation information technology, and the optimal design of the InP-based heat-insulating guided wave system plays a role in the fields of optical communication and millimeter wave communication.
Disclosure of Invention
This section is intended to outline some aspects of embodiments of the application and to briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section as well as in the description of the application and in the title of the application, which may not be used to limit the scope of the application.
The present application has been made in view of the above and/or problems occurring in the prior InP.
It is therefore an object of the present application to provide an InP-based adiabatic guided wave system suitable for optical and millimeter wave communications, which can be used to connect various functional units different in optical and millimeter wave communications, so that energy information can be moved in an adiabatic manner within a short distance, thereby spatially transmitting energy information from one functional unit to another functional unit, while minimizing loss.
In order to solve the technical problems, according to one aspect of the present application, the following technical solutions are provided:
an InP-based adiabatic guided wave system suitable for optical and millimeter wave communications, comprising: the multi-ridge waveguide structure is connected with the conventional silicon ridge waveguide structure through a silicon core;
the multi-ridge waveguide structure and the conventional silicon ridge waveguide structure comprise a first silicon dioxide cladding layer, a silicon core, a first air cladding layer and a first InP cladding layer, wherein the first silicon dioxide cladding layer is connected with the silicon core, the silicon core is connected with the first air cladding layer, and the first air cladding layer is connected with the first InP cladding layer;
the first InP cladding layer is connected with a second InP cladding layer, the second InP cladding layer is connected with a third InP cladding layer, and the third InP cladding layer is connected with a second silicon dioxide cladding layer.
Preferably, the thickness of the first silicon dioxide cladding layer is h 1 Refractive index n SiO2 =1.445, the thickness of the silicon core is h 2 Refractive index n si = 3.455, the first air cladding has a thickness h 3 Refractive index n Air =1, the thickness of the first InP clad layer is h 4 Refractive index n InP1 = 3.1825 the second InP cladding layer has a thickness h 5 Refractive index n InP2 = 3.4195 the thickness of the third InP clad layer is h 6 Refractive index n InP3 = 3.1787, the second silica cladding has a thickness h 7 Refractive index n SiO2 ＝1.445。
Preferably, the silicon core realizes light beam propagation and comprises two outer tapered waveguides, two sub-outer tapered waveguides are arranged on the inner sides of the two outer tapered waveguides, two inner tapered waveguides are arranged on the inner sides of the two sub-outer tapered waveguides, and an intermediate core tapered waveguide is arranged on the inner sides of the two inner tapered waveguides.
Preferably, said h 1 、h 2 、h 3 、h 4 、h 5 、h 6 、h 7 The values of the (C) are all 20nm to 2000nm.
Preferably, the outer tapered waveguide has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Reduced to 0 and length L 2 Is provided;
the secondary outside tapered waveguide has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Shrink to W 1 ＝W L 2, length L 2 Is connected with a second tapered waveguide with a width from W 1 ＝W L /2 is reduced to 0, length L 3 Is a third tapered waveguide of (a);
the inner tapered waveguide has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Shrink to W 2 ＝2W L 3, length L 2 A fourth tapered waveguide connected with W 2 ＝2W L 3 is reduced to W 3 ＝W L 3, length L 3 A fifth tapered waveguide connected with W 3 ＝W L 3 is reduced to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Increase to W 1 ＝(3W L +W R ) /4, length L 2 A seventh tapered waveguide connected with a waveguide having a width from W 1 Increase to W 2 ＝(W L +W R ) 2, length L 3 An eighth tapered waveguide connected with a waveguide having a width from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 A ninth tapered waveguide connected with a waveguide having a width from W 3 Increase to W R Length L 5 Is provided.
Preferably, the L 1 、L 2 、L 3 、L 4 The values of (2) are all 20 μm to 2000 μm.
Compared with the prior art, the application has the beneficial effects that:
1. the application designs an InP-based adiabatic guided wave system which is used for connecting different functional units in optical communication and millimeter wave communication, transmitting information in a multiple ridge waveguide structure into a conventional silicon ridge waveguide structure in a lossless manner, and the prior art cannot design the situation.
2. According to the application, through designing each part of the InP-based adiabatic guided wave system in the light beam propagation direction, energy information is slowly changed along the propagation direction, and the energy information of the input end is propagated to the output end in a lossless manner in a shortest distance, so that adiabatic lossless transmission of information in optical communication and millimeter wave communication is realized.
3. The structure designed by the application is divided into a plurality of segments in the energy information transmission direction, each segment is designed respectively, the numerical idea is adopted, and the numerical result of the InP-based adiabatic guided wave system is obtained, so that the length of the whole structure is shortened greatly, and the optimal design of the compact InP-based adiabatic guided wave system is realized.
4. The InP-based adiabatic waveguide system can obtain a very wide working bandwidth, has a small and simple structure, and can improve the integration level of an InP-based adiabatic chip to realize a smaller size so as to meet the development requirements of the fields of optical communication and millimeter wave communication.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following detailed description will be given with reference to the accompanying drawings and detailed embodiments, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive faculty for a person skilled in the art. Wherein:
FIG. 1 is a left side view of the InP-based adiabatic guided wave system of the present application;
FIG. 2 is a right side view of the InP-based adiabatic guided wave system of the present application;
FIG. 3 is a view of a silicon core of the present application;
FIG. 4 is a left side view of an InP-based adiabatic guided wave system of the present application;
fig. 5 is a practical right side view of an InP-based adiabatic guided wave system of the present application.
Fig. 6 is a graph of power transfer in accordance with the present application.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, wherein the sectional view of the device structure is not partially enlarged to general scale for the convenience of description, and the drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present application provides an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, comprising: a multiple ridge waveguide structure 8, the multiple ridge waveguide structure 8 being connected to a conventional silicon ridge waveguide structure by a silicon core 2);
the multi-ridge waveguide structure 8 and the conventional silicon ridge waveguide structure 9 comprise a first silicon dioxide cladding layer 1, a silicon core 2, a first air cladding layer 3 and a first InP cladding layer 4, wherein the first silicon dioxide cladding layer 1 is connected with the silicon core 2, the silicon core 2 is connected with the first air cladding layer 3, and the first air cladding layer 3 is connected with the first InP cladding layer 4;
the first InP clad layer 4 is connected to a second InP clad layer 5, the second InP clad layer 5 is connected to a third InP clad layer 6, and the third InP clad layer 6 is connected to a second silica clad layer 7.
The thickness of the first silica cladding 1 is h 1 Refractive index n SiO2 =1.445, the thickness of the silicon core 2 is h 2 Refractive index n si = 3.455 the first air cladding 3 has a thickness h 3 Refractive index n Air =1, the first InP clad layer 4 has a thickness h 4 Refractive index n InP1 The second InP clad layer 5 has a thickness h= 3.1825 5 Refractive index n InP2 = 3.4195 the thickness of the third InP clad layer 6 is h 6 Refractive index n InP3 = 3.1787 the second silica cladding 7 has a thickness h 7 Refractive index n SiO2 =1.445, where in the present embodiment h 1 ＝1000nm，h 2 ＝80nm，h 3 ＝420nm，h 4 ＝150nm，h 5 ＝396nm，h 6 ＝1500nm，h 7 ＝1000nm。
As shown in fig. 3, the silicon core 2 is configured to implement beam propagation and includes two outer tapered waveguides 21, two sub-outer tapered waveguides 22 are disposed inside the two outer tapered waveguides 21, two inner tapered waveguides 23 are disposed inside the two sub-outer tapered waveguides 22, and an intermediate core tapered waveguide 24 is disposed inside the two inner tapered waveguides 23.
The outer tapered waveguide 21 has a width W L Length L 1 Is connected with a parallel plate waveguide with width W L Reduced to 0 and length L 2 Is provided;
the minor-outside tapered waveguide 22 has a width W L Length L 1 Is connected with a parallel plate waveguide with width W L Shrink to W 1 ＝W L 2, length L 2 Is connected with a second tapered waveguide with a width from W 1 ＝W L /2 is reduced to 0, length L 3 Is of a third taper of (2)A waveguide;
the inner tapered waveguide 23 has a width W L Length L 1 Is connected with a parallel plate waveguide with width W L Shrink to W 2 ＝2W L 3, length L 2 Is connected with W 2 ＝2W L 3 is reduced to W 3 ＝W L 3, length L 3 Is connected with W 3 ＝W L 3 is reduced to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide 24 has a width W L Length L 1 Is connected with a parallel plate waveguide with width W L Increase to W 1 ＝(3W L +W R ) /4, length L 2 A seventh tapered waveguide of (2) connected with a waveguide having a width from W 1 Increase to W 2 ＝(W L +W R ) 2, length L 3 Eighth tapered waveguide of (2) connected with a waveguide having a width from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 Is connected with a ninth tapered waveguide with a width from W 3 Increase to W R Length L 5 Is provided.
Wherein in the present embodiment, W L For input end multiple ridge waveguide, W L =0.2 μm, waveguide gap spacing g=0.45 μm, W R For the width of the ridge waveguide at the output end, W R =1.5 μm, and the wavelength of the light beam is 1.564 μm.
Fig. 4 and 5 show the InP-based adiabatic guided wave system under actual operation.
The length of each segment in the structure can be arbitrarily selected, and an InP-based adiabatic guided wave system capable of realizing lossless transmission of energy information can be designed. With L 1 ＝L 2 ＝L 3 ＝L 4 ＝L 5 By taking a design length of 50 μm as an example, the power transmission efficiency curves of TE0 mode input and TE0 mode output of the InP-based adiabatic guided wave system can be obtained by simulation, as shown in FIG. 6, which shows thatCorresponding power transmission efficiency at the same length. As can be seen from the figure, a total length of 750 μm achieves a 90% power transmission efficiency, and if a higher power transmission efficiency is to be achieved, a longer length is selected from fig. 6, and if a 95% power transmission efficiency is to be achieved, a total length of 1500 μm is required. The practical application needs to select different lengths according to application requirements, so that the design of the compact InP-based adiabatic guided wave system in the fields of optical communication and millimeter wave communication is realized.
L 1 、L 2 、L 3 、L 4 And L 5 Is the design length of each segment, and the segments are spliced together as independent and complete structures to form a final InP-based adiabatic guided wave system, different L 1 、L 2 、L 3 、L 4 And L 5 The value affects the "absolute length" of each segment, and the "overall shape" of the final InP-based adiabatic guided wave system is determined by the "relative length" of each segment, so that the "relative length" of the final InP-based adiabatic guided wave system can be obtained by simulation scanning the "absolute length", for example, the total length of 750 μm achieves 90% of transmission efficiency, which is the "relative length" of the final InP-based adiabatic guided wave system, and the length can be used for practical manufacturing, and the test transmission efficiency can reach 90%.
Although the application has been described hereinabove with reference to embodiments, various modifications thereof may be made and equivalents may be substituted for elements thereof without departing from the scope of the application. In particular, the features of the disclosed embodiments may be combined with each other in any manner as long as there is no structural conflict, and the exhaustive description of these combinations is not given in this specification merely for the sake of omitting the descriptions and saving resources. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (4)
1. An InP-based adiabatic guided wave system suitable for optical and millimeter wave communications, comprising: a multiple ridge waveguide structure (8), wherein the multiple ridge waveguide structure (8) is connected with a conventional silicon ridge waveguide structure (9) through a silicon core (2);
the multi-ridge waveguide structure (8) and the conventional silicon ridge waveguide structure (9) comprise a first silicon dioxide cladding layer (1), a silicon core (2), a first air cladding layer (3) and a first InP cladding layer (4), wherein the first silicon dioxide cladding layer (1) is connected with the silicon core (2), the silicon core (2) is connected with the first air cladding layer (3), and the first air cladding layer (3) is connected with the first InP cladding layer (4);
the first InP cladding layer (4) is connected with a second InP cladding layer (5), the second InP cladding layer (5) is connected with a third InP cladding layer (6), and the third InP cladding layer (6) is connected with a second silicon dioxide cladding layer (7); the silicon core (2) realizes light beam propagation and comprises two outer tapered waveguides (21), two sub-outer tapered waveguides (22) are arranged on the inner sides of the two outer tapered waveguides (21), two inner tapered waveguides (23) are arranged on the inner sides of the two sub-outer tapered waveguides (22), and a middle core tapered waveguide (24) is arranged on the inner sides of the two inner tapered waveguides (23); the outer tapered waveguide (21) has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Reduced to 0 and length L 2 Is provided;
the minor-outside tapered waveguide (22) has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Shrink to W 1 ＝W L 2, length L 2 Is connected with a second tapered waveguide with a width from W 1 ＝W L /2 is reduced to 0, length L 3 Is a third tapered waveguide of (a);
the inner tapered waveguide (23) has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Shrink to W 2 ＝2W L 3, length L 2 A fourth tapered waveguide connected with W 2 ＝2W L 3 is reduced to W 3 ＝W L 3, length L 3 A fifth tapered waveguide connected with W 3 ＝W L 3 is reduced to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide (24) has a width W L Length L 1 Is connected with a parallel plate waveguide with a width W L Increase to W 1 ＝(3W L +W R ) /4, length L 2 A seventh tapered waveguide connected with a waveguide having a width from W 1 Increase to W 2 ＝(W L +W R ) 2, length L 3 An eighth tapered waveguide connected with a waveguide having a width from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 A ninth tapered waveguide connected with a waveguide having a width from W 3 Increase to W R Length L 5 Is provided.
2. An InP-based adiabatic guided wave system for optical and millimeter wave communication according to claim 1, wherein the thickness of the first silica cladding (1) is h 1 Refractive index n SiO2 =1.445, the thickness of the silicon core (2) is h 2 Refractive index n si = 3.455, the first air cladding (3) has a thickness h 3 Refractive index n Air =1, the first InP cladding layer (4) has a thickness h 4 Refractive index n InP1 = 3.1825, the second InP cladding layer (5) has a thickness h 5 Refractive index n InP2 = 3.4195, the thickness of the third InP clad layer (6) is h 6 Refractive index n InP3 = 3.1787, the second silica cladding (7) has a thickness h 7 Refractive index n SiO2 ＝1.445。
3. An InP-based adiabatic guided wave system suitable for optical and millimeter wave communication as claimed in claim 2, characterized in that said h 1 、h 2 、h 3 、h 4 、h 5 、h 6 、h 7 The values of the (C) are all 20nm to 2000nm.
4. The InP-based adiabatic guided wave system for optical and millimeter wave communication according to claim 1, wherein said L 1 、L 2 、L 3 、L 4 The values of (2) are all 20 μm to 2000 μm.
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| CN115061235A (en) | 2022-09-16 |
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