CN115061235A - InP-based heat insulation guided wave system suitable for optical communication and millimeter wave communication - Google Patents
InP-based heat insulation guided wave system suitable for optical communication and millimeter wave communication Download PDFInfo
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- CN115061235A CN115061235A CN202210748458.XA CN202210748458A CN115061235A CN 115061235 A CN115061235 A CN 115061235A CN 202210748458 A CN202210748458 A CN 202210748458A CN 115061235 A CN115061235 A CN 115061235A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention discloses an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, which comprises: the invention can be used for connecting different various functional units in optical communication and millimeter wave communication, so that energy information can move in an adiabatic manner within a short distance, thereby transmitting the energy information from one functional unit to another in space, and simultaneously reducing the loss to the minimum.
Description
Technical Field
The invention relates to the technical field of optical communication and millimeter wave communication, in particular to an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication.
Background
The optical communication device mainly adopts indium phosphide (InP) materials, and InP becomes an indispensable important semiconductor material of photoelectric devices and microelectronic devices, and is widely applied to the fields of optical communication and millimeter wave communication.
At present, the internet adopts an optical fiber cable to realize high-speed transmission of information, and only information sent by a laser made of InP materials can realize lossless transmission in the optical fiber. InP is a direct band gap material, and has the advantages of high electron mobility, excellent radiation resistance, large bandwidth, high stability and the like. The InP fundamental waveguide structure can realize lossless transmission of information in optical fiber communication and millimeter wave communication, and can be applied to large data centers of enterprises such as China Mobile, Union, telecommunication, Huashi and the like. InP can realize different refractive indexes to meet requirements by controlling the combination ratio of different elements. InP-based active photonic devices, passive photonic devices, and InP-based microelectronic circuits may be integrated on the same substrate ("chip"). The InP-based adiabatic guided wave system is a connector for connecting various functional units in optical communication and millimeter wave communication, energy information is transmitted from one functional unit to another functional unit, and in order to improve the integration level of an InP-based chip and realize smaller size to meet the requirement of development of new-generation information technology, the optimized design of the InP-based adiabatic guided wave system plays a significant role in the fields of optical communication and millimeter wave communication.
Disclosure of Invention
This section is for the purpose of summarizing some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. In this section, as well as in the abstract and the title of the invention of this application, simplifications or omissions may be made to avoid obscuring the purpose of the section, the abstract and the title, and such simplifications or omissions are not intended to limit the scope of the invention.
The present invention has been made in view of the above and/or problems occurring in the existing InP.
It is therefore an object of the present invention to provide an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, which can be used to connect various different functional units in optical communication and millimeter wave communication, so that energy information can be adiabatically moved in a short distance, thereby spatially transmitting energy information from one functional unit to another while minimizing loss.
To solve the above technical problem, according to an aspect of the present invention, the present invention provides the following technical solutions:
an InP-based adiabatic guided wave system suitable for optical and millimeter wave communications, comprising: the multi-ridge waveguide structure is connected with a conventional silicon ridge waveguide structure through a silicon core;
the multiple ridge waveguide structure and the conventional silicon ridge waveguide structure respectively comprise a first silica cladding layer, a silicon core, a first air cladding layer and a first InP cladding layer, wherein the first silica cladding layer is connected with the silicon core, the silicon core is connected with the first air cladding layer, and the first air cladding layer is connected with the first InP cladding layer;
the first InP cladding layer is connected with a second InP cladding layer, the second InP cladding layer is connected with a third InP cladding layer, and the third InP cladding layer is connected with a second silica cladding layer.
Preferably, the first silica cladding layer has a thickness h 1 Refractive index n SiO2 1.445, the silicon core has a thickness of h 2 Refractive index n si 3.455, the first air cladding has a thickness h 3 Refractive index n Air 1, the thickness of the first InP cladding layer is h 4 Refractive index n InP1 3.1825, the second InP cladding layer has a thickness h 5 Refractive index n InP2 3.4195, the third InP cladding layer has a thickness h 6 Refractive index n InP3 3.1787, the second silica cladding has a thickness h 7 Refractive index n SiO2 ＝1.445。
Preferably, the silicon core for realizing light beam propagation comprises two outer side tapered waveguides, two secondary outer side tapered waveguides are arranged on the inner sides of the two outer side tapered waveguides, two inner side tapered waveguides are arranged on the inner sides of the two secondary outer side tapered waveguides, and a middle core tapered waveguide is arranged on the inner sides of the two inner side tapered waveguides.
Preferably, said h 1 、h 2 、h 3 、h 4 、h 5 、h 6 、h 7 The value ranges of the (A) and (B) are all 20nm to 2000 nm.
Preferably, the outer tapered waveguide has a width W L Length of L 1 The parallel plate waveguide to which a waveguide having a width of W is connected L Reduced to 0 and a length L 2 The first tapered waveguide of (a);
the sub-outer tapered waveguide has a width W L Length of L 1 The parallel plate waveguide is connected with a width W L Reduction to W 1 ＝W L A length of L 2 The second tapered waveguide is connected with a second tapered waveguide with a width W 1 ＝W L A reduction of/2 to 0, length L 3 The third tapered waveguide of (1);
the inner tapered waveguide has a width W L Length of L 1 The parallel plate waveguide is connected with a width W L Reduction to W 2 ＝2W L A length of L 2 Is connected with W 2 ＝2W L Reduction of/3 to W 3 ＝W L /3, length L 3 A fifth tapered waveguide connected to W 3 ＝W L A reduction of/3 to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide has a width W L Length L of 1 The parallel plate waveguide is connected with a width W L Increase to W 1 ＝(3W L +W R ) /4, length L 2 Is connected with a seventh tapered waveguide having a width from W 1 Increase to W 2 ＝(W L +W R ) A length of L 3 Is connected to a waveguide having a width of from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 The ninth tapered waveguide of (2), the ninth tapered waveguide being connected to a waveguide having a width from W 3 Increase to W R Length of L 5 The tenth tapered waveguide of (2).
Preferably, said L 1 、L 2 、L 3 、L 4 The value ranges from 20 μm to 2000 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention designs an InP-based adiabatic guided wave system which is used for connecting different functional units in optical communication and millimeter wave communication and transmitting information in a multiple ridge waveguide structure to a conventional silicon ridge waveguide structure without loss, and the prior art cannot design the situation.
2. The invention designs each part of the InP-based adiabatic guided wave system in the light beam propagation direction respectively, so that the energy information is slowly changed along the propagation direction, the energy information at the input end is propagated to the output end in a short distance as far as possible without loss, and the adiabatic lossless transmission of the information in optical communication and millimeter wave communication is realized.
3. The structure designed by the invention is divided into a plurality of segments in the energy information transmission direction, each segment is respectively designed, and the numeralization idea is adopted to obtain the numeralization result of the InP-based adiabatic guided wave system, so that the length of the whole structure is greatly shortened, and the optimized design of the compact InP-based adiabatic guided wave system is realized.
4. The InP-based adiabatic guided wave system can obtain a wide working bandwidth, the obtained structure is small in size and simple in structure, the integration level of an InP-based adiabatic chip can be improved, and the size is smaller so as to meet the development requirements of the fields of optical communication and millimeter wave communication.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and detailed embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise. Wherein:
FIG. 1 is a left side view of an InP-based guided adiabatic wave system according to the present invention;
FIG. 2 is a right side view of an InP-based guided adiabatic wave system of the present invention;
FIG. 3 is a view of a silicon core of the present invention;
FIG. 4 is a left side view of an InP-based guided adiabatic wave system according to the present invention;
FIG. 5 is a right side view of an InP-based guided adiabatic wave system according to the present invention.
Fig. 6 is a graph of power transfer curves according to the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and it will be apparent to those of ordinary skill in the art that the present invention may be practiced without departing from the spirit and scope of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Next, the present invention will be described in detail with reference to the drawings, wherein for convenience of illustration, the cross-sectional view of the device structure is not enlarged partially according to the general scale, and the drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present invention provides an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, including: a multiple ridge waveguide structure 8, wherein the multiple ridge waveguide structure 8 is connected with a conventional silicon ridge waveguide structure through a silicon core 2);
the multiple ridge waveguide structure 8 and the conventional silicon ridge waveguide structure 9 both comprise a first silica cladding layer 1, a silicon core 2, a first air cladding layer 3 and a first InP cladding layer 4, wherein the first silica cladding layer 1 is connected with the silicon core 2, the silicon core 2 is connected with the first air cladding layer 3, and the first air cladding layer 3 is connected with the first InP cladding layer 4;
the first InP clad layer 4 is connected to a second InP clad layer 5, the second InP clad layer 5 is connected to a third InP clad layer 6, and the third InP clad layer 6 is connected to a second silica clad layer 7.
The first silica cladding layer 1 has a thickness h 1 Refractive index n SiO2 1.445, the thickness of the silicon core 2 is h 2 Refractive index n si 3.455, the first air cladding 3 has a thickness h 3 Refractive index n Air The thickness of the first InP clad layer 4 is h 1 4 Refractive index n InP1 3.1825, the second InP cladding layer 5 has a thickness h 5 Refractive index n InP2 3.4195, the thickness of the third InP cladding layer 6 is h 6 Refractive index n InP3 3.1787, the second silica cladding 7 has a thickness h 7 Refractive index n SiO2 1.445, where in this example h 1 ＝1000nm，h 2 ＝80nm，h 3 ＝420nm，h 4 ＝150nm，h 5 ＝396nm，h 6 ＝1500nm，h 7 ＝1000nm。
As shown in fig. 3, the silicon core 2 for realizing light beam propagation includes two outer tapered waveguides 21, two sub-outer tapered waveguides 22 inside the two outer tapered waveguides 21, two inner tapered waveguides 23 inside the two sub-outer tapered waveguides 22, and a middle core tapered waveguide 24 inside the two inner tapered waveguides 23.
The outer tapered waveguide 21 has a width W L Length of L 1 Parallel plate waveguide connected to a waveguide having a width of from W L Reduced to 0 and a length L 2 The first tapered waveguide of (a);
the sub-outer tapered waveguide 22 has a width W L Length of L 1 Parallel plate waveguide connected to a waveguide having a width of from W L Reduction to W 1 ＝W L A length of L 2 The second tapered waveguide is connected with a second tapered waveguide with a width from W 1 ＝W L A reduction of/2 to 0, length L 3 The third tapered waveguide of (1);
the inner tapered waveguide 23 has a width W L Length of L 1 Parallel plate waveguide connected to a waveguide having a width of from W L Reduction to W 2 ＝2W L A length of L 2 Is connected with W 2 ＝2W L Reduction of/3 to W 3 ＝W L /3, length L 3 Is connected with W 3 ＝W L A reduction of/3 to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide 24 has a width W L Length L of 1 Parallel plate waveguide connected to a waveguide having a width of from W L Increase to W 1 ＝(3W L +W R ) L4, length of 2 The seventh tapered waveguide is connected to the second waveguide with a width from W 1 Increase to W 2 ＝(W L +W R ) A length of L 3 Is connected to the eighth tapered waveguide with a width from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 The ninth tapered waveguide is connected with a waveguide with a width W 3 Increase to W R Length of L 5 The tenth tapered waveguide of (1).
Wherein in the present embodiment, W L Is an input-side multiple ridge waveguide, W L 0.2 μm, 0.45 μm for the waveguide gap spacing g, W R Width of the output-end ridge waveguide, W R The wavelength of the beam was 1.564 μm, 1.5 μm.
Fig. 4 and 5 show the InP-based adiabatic waveguide system in actual operation.
The individual segments in the structure of the inventionThe length of the InP-based adiabatic guided wave system can be selected at will, and the InP-based adiabatic guided wave system capable of realizing lossless transmission of energy information can be designed. With L 1 ＝L 2 ＝L 3 ＝L 4 ＝L 5 For example, the power transmission efficiency curves of the TE0 mode input and the TE0 mode output of the InP-based guided adiabatic wave system can be obtained by simulation, as shown in fig. 6, which shows the corresponding power transmission efficiency at different lengths. As can be seen from the figure, a total length of 750 μm can achieve 90% power transfer efficiency, and if higher power transfer efficiency is to be achieved, a longer length is selected from fig. 6, and if 95% power transfer efficiency is to be achieved, a total length of 1500 μm is required. In practical application, different lengths need to be selected according to application requirements, so that the design of a compact InP-based adiabatic guided wave system in the fields of optical communication and millimeter wave communication is realized.
L 1 、L 2 、L 3 、L 4 And L 5 Is the designed length of each segment, and the segments are spliced together as independent complete structures to form the final InP-based adiabatic guided wave system with different L 1 、L 2 、L 3 、L 4 And L 5 The value influences the absolute length of each segment, and the overall shape of the final InP-based adiabatic guided wave system is determined by the relative length of each segment, and the relative length of the final InP-based adiabatic guided wave system can be obtained by simulation scanning the absolute length, for example, the relative length of the final InP-based adiabatic guided wave system is the transmission efficiency of 90% achieved by 750 μm total length, and the transmission efficiency can be up to 90% for practical manufacturing.
While the invention has been described above with reference to an embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the various features of the disclosed embodiments of the invention may be used in any combination, provided that no structural conflict exists, and the combinations are not exhaustively described in this specification merely for the sake of brevity and resource conservation. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (6)
1. An InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, comprising: the multi-ridge waveguide structure (8), wherein the multi-ridge waveguide structure (8) is connected with a conventional silicon ridge waveguide structure (9) through a silicon core (2);
the multiple ridge waveguide structure (8) and the conventional silicon ridge waveguide structure (9) respectively comprise a first silica cladding layer (1), a silicon core (2), a first air cladding layer (3) and a first InP cladding layer (4), wherein the first silica cladding layer (1), the first silica cladding layer (1) is connected with the silicon core (2), the silicon core (2) is connected with the first air cladding layer (3), and the first air cladding layer (3) is connected with the first InP cladding layer (4);
the first InP cladding layer (4) is connected with a second InP cladding layer (5), the second InP cladding layer (5) is connected with a third InP cladding layer (6), and the third InP cladding layer (6) is connected with a second silica cladding layer (7).
2. The InP-based guided adiabatic wave system for optical and millimeter wave communication of claim 1, wherein the first silica cladding (1) has a thickness h 1 Refractive index n SiO2 1.445, the thickness of the silicon core (2) is h 2 Refractive index n si 3.455, the first air cladding (3) has a thickness h 3 Refractive index n Air 1, the thickness of the first InP cladding layer (4) is h 4 Refractive index n InP1 3.1825, the second InP cladding (5) has a thickness h 5 Refractive index n InP2 3.4195, the third InP cladding layer (6) has a thickness h 6 Refractive index n InP3 3.1787, the second silica cladding (7) has a thickness h 7 Refractive index n SiO2 ＝1.445。
3. The InP-based adiabatic guided wave system for optical and millimeter wave communication as claimed in claim 1, wherein said silicon core (2) for optical beam propagation comprises two outer tapered waveguides (21), two sub-outer tapered waveguides (22) inside said two outer tapered waveguides (21), two inner tapered waveguides (23) inside said two sub-outer tapered waveguides (22), and a middle core tapered waveguide (24) inside said two inner tapered waveguides (23).
4. The InP-based guided adiabatic wave system for optical and millimeter-wave communication of claim 1, wherein h is 1 、h 2 、h 3 、h4、h 5 、h 6 、h 7 The value ranges of the (A) and (B) are all 20nm to 2000 nm.
5. The InP-based adiabatic guided wave system for optical and millimeter wave communication according to claim 3, wherein the outer tapered waveguide (21) has a width W L Length of L 1 The parallel plate waveguide is connected with a width W L Reduced to 0 and a length L 2 The first tapered waveguide of (a);
the sub-outer tapered waveguide (22) has a width W L Length of L 1 The parallel plate waveguide is connected with a width W L Reduction to W 1 ＝W L A length of L 2 The second tapered waveguide is connected with a second tapered waveguide with a width W 1 ＝W L A reduction of/2 to 0, length L 3 The third tapered waveguide of (1);
the inner tapered waveguide (23) has a width W L Length of L 1 The parallel plate waveguide to which a waveguide having a width of W is connected L Down to W 2 ＝2W L A length of L 2 Is connected with W 2 ＝2W L Reduction of/3 to W 3 ＝W L /3, length L 3 A fifth tapered waveguide connected to W 3 ＝W L A reduction of/3 to 0, length L 4 A sixth tapered waveguide;
the intermediate core tapered waveguide (24) has a width W L Length L of 1 The parallel plate waveguide is connected with a width W L Increase to W 1 ＝(3W L +W R ) /4, length L 2 Is connected with a seventh tapered waveguide having a width from W 1 Increase to W 2 ＝(W L +W R ) A length of L 3 Is connected to a waveguide having a width of from W 2 Increase to W 3 ＝(W L +3W R ) /4, length L 4 The ninth tapered waveguide of (1), the ninth tapered waveguide being connected with a waveguide having a width from W 3 Increase to W R Length of L 5 The tenth tapered waveguide of (1).
6. The InP-based adiabatic guided wave system of claim 5, wherein L1, L2, L3 and L4 are all 20 μm to 2000 μm.
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