CN115061235A - An InP-based adiabatic guided wave system suitable for optical communication and millimeter-wave communication - Google Patents

Abstract

The invention discloses an InP-based adiabatic waveguide system suitable for optical communication and millimeter wave communication, which comprises: a first silicon dioxide cladding layer, the first silicon dioxide cladding layer is connected to a silicon core, and the silicon core is connected to a first air cladding layer, the first air cladding layer is connected to a first InP cladding layer, the first InP cladding layer is connected to a second InP cladding layer, the second InP cladding layer is connected to a third InP cladding layer, the The third InP cladding layer is connected to the second silica cladding layer, and the present invention can be used to connect various functional units in optical communication and millimeter wave communication, so that energy information can be moved adiabatically in a short distance, so that it can be used in space. It transfers energy information from one functional unit to another while minimizing losses.

Description

An InP-based adiabatic guided wave system suitable for optical communication and millimeter-wave communication

technical field

The invention relates to the technical field of optical communication and millimeter wave communication, in particular to an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication.

Background technique

Optical communication devices mainly use indium phosphide (InP) materials. InP has become an indispensable semiconductor material for optoelectronic devices and microelectronic devices, and is widely used in the fields of optical communication and millimeter wave communication.

At present, the Internet uses optical fiber cables to achieve high-speed transmission of information. Only the information emitted by lasers made of InP materials can be transmitted in optical fibers without loss. InP is a direct bandgap material with the advantages of high electron mobility, excellent radiation resistance, large bandwidth, and high stability. The InP-based waveguide structure can realize the lossless transmission of information in optical fiber communication and millimeter wave communication, and can be applied to the big data centers of China Mobile, China Unicom, China Telecom, Huawei and other enterprises. InP can achieve different refractive indices to meet the requirements by controlling the combination ratio of different elements. InP-based active photonic devices, passive photonic devices, and InP-based microelectronic circuits can be integrated on the same substrate ("chip"). InP-based adiabatic guided wave system is a "connector" that connects various functional units in optical communication and millimeter-wave communication, and transmits energy information from one functional unit to another functional unit. In order to improve the integration of InP-based chips, achieve smaller In order to meet the needs of the development of new generation information technology, the optimal design of InP-based adiabatic guided wave system plays an important role in the field of optical communication and millimeter wave communication.

SUMMARY OF THE INVENTION

The purpose of this section is to outline some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the abstract and title of the application to avoid obscuring the purpose of this section, abstract and title, and such simplifications or omissions may not be used to limit the scope of the invention.

The present invention has been proposed in view of the above-mentioned and/or problems existing in existing InPs.

Therefore, the purpose of the present invention is to provide an InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, which can be used to connect various functional units in optical communication and millimeter wave communication, so that energy information can be It moves adiabatically over distance, thereby spatially transferring energy information from one functional unit to another while minimizing losses.

In order to solve the above-mentioned technical problems, according to one aspect of the present invention, the present invention provides the following technical solutions:

An InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, comprising: a multiple ridge waveguide structure, the multiple ridge waveguide structure is connected to a conventional silicon ridge waveguide structure through a silicon core;

The multiple ridge waveguide structure and the conventional silicon ridge waveguide structure all include a first silicon dioxide cladding layer, a silicon core, a first air cladding layer, a first InP cladding layer, the first silicon dioxide cladding layer, and the first silicon dioxide cladding layer. A silicon dioxide cladding layer is connected to the silicon core, the silicon core is connected to the first air cladding layer, and the first air cladding layer is connected to the first InP cladding layer;

The first InP cladding layer is connected to the second InP cladding layer, the second InP cladding layer is connected to the third InP cladding layer, and the third InP cladding layer is connected to the second silicon dioxide cladding layer.

Preferably, the thickness of the first silicon dioxide cladding layer is h ₁ , the refractive index n _{SiO 2} =1.445, the thickness of the silicon core is h ₂ , the refractive index n _si =3.455, and the first air cladding layer has a thickness of h 2 and a refractive index n si =3.455. The thickness is h ₃ , the refractive index n _Air =1, the thickness of the first InP cladding layer is h ₄ , the refractive index n _InP1 =3.1825, the thickness of the second InP cladding layer is h ₅ , the refractive index n _InP2 = 3.4195, the thickness of the third InP cladding layer is h ₆ , the refractive index n _InP3 =3.1787, the thickness of the second silicon dioxide cladding layer is h ₇ , and the refractive index n _SiO2 =1.445.

Preferably, the silicon core realizes beam propagation including two outer tapered waveguides, two sub-outside tapered waveguides inside the two outer tapered waveguides, and two sub-outside tapered waveguides inside the two sub-outside tapered waveguides Inside tapered waveguides, the two inside tapered waveguides have an intermediate core tapered waveguide inside.

Preferably, the value ranges of the h ₁ , h ₂ , h ₃ , h ₄ , h ₅ , h ₆ , and h ₇ are all 20 nm to 2000 nm.

Preferably, the outer tapered waveguide has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a first tapered waveguide with a width reduced from W _L to 0 and a length L ₂ ;

The secondary outer tapered waveguide has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a second width reduced from W _L to W ₁ =W _L /2 and a length L ₂ . a tapered waveguide, the second tapered waveguide is connected with a third tapered waveguide with a width reduced from W ₁ =W _L /2 to 0 and a length L ₃ ;

The inner tapered waveguide has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a fourth taper whose width is reduced from W _L to W ₂ =2W _L /3 and a length L ₂ The fourth tapered waveguide is connected with a fifth tapered waveguide with W ₂ =2W _L /3 reduced to W ₃ =W _L /3 and the length L ₃ , and the fifth tapered waveguide is connected with W ₃ =W _L /3 reduced to 0, length L ₄ sixth tapered waveguide;

The intermediate core tapered waveguide has a parallel-plate waveguide of width W _L and length L ₁ connected with a width increasing from W _L to W ₁ =(3W _L +W _R )/4 and length L ₂ A seventh tapered waveguide, the seventh tapered waveguide is connected with an eighth tapered waveguide whose width increases from W ₁ to W ₂ =(W _L +W _R )/2, and the length is L ₃ , the eighth tapered waveguide is The tapered waveguide is connected with a ninth tapered waveguide with a width increasing from W ₂ to W ₃ =(W _L +3W _R )/4 and a length L ₄ , the ninth tapered waveguide connecting with a width increasing from W _{3 A} tenth tapered waveguide of length _L5 as large as WR.

Preferably, the value ranges of L ₁ , L ₂ , L ₃ and L ₄ are all 20 μm to 2000 μm.

Compared with the prior art, the beneficial effects of the present invention are:

1. The present invention designs an InP-based adiabatic guided wave system for connecting different functional units in optical communication and millimeter-wave communication, and transmits the information in the multiple ridge waveguide structure to the conventional silicon ridge waveguide structure without loss , the existing technology cannot be designed for this situation.

2. In the present invention, each part of the InP-based adiabatic guided wave system is designed separately in the beam propagation direction, so that the energy information changes slowly along the propagation direction, and the energy information at the input end is transmitted to the output without loss in the shortest possible distance. It can realize adiabatic and lossless transmission of information in optical communication and millimeter wave communication.

3. The structure designed by the present invention is divided into several segments in the direction of energy information transmission. Each segment is designed separately, and the numerical idea is adopted to obtain the numerical results of the InP-based adiabatic guided wave system, thereby greatly shortening the entire process. The length of the structure can realize the optimal design of the compact InP-based adiabatic guided wave system.

4. The InP-based adiabatic waveguide system of the present invention can obtain a wide working bandwidth, and the obtained structure is small in size and simple in structure, and can improve the integration degree of the InP-based adiabatic chip to achieve a smaller size to meet the requirements of optical communication and millimeter wave communication. development needs of the field.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and detailed embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, which are very important in the art. For those of ordinary skill, other drawings can also be obtained from these drawings without creative labor. in:

Fig. 1 is the left side view of the structure of the InP-based adiabatic guided wave system of the present invention;

Fig. 2 is the right side view of the structure of the InP-based adiabatic guided wave system of the present invention;

Fig. 3 is the silicon core view of the present invention;

Fig. 4 is the actual left side view of the InP-based adiabatic guided wave system of the present invention;

FIG. 5 is an actual right side view of the InP-based adiabatic guided wave system of the present invention.

FIG. 6 is a power transmission curve diagram of the present invention.

Detailed ways

In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those skilled in the art can do so without departing from the connotation of the present invention. Similar promotion, therefore, the present invention is not limited by the specific embodiments disclosed below.

Next, the present invention is described in detail with reference to the schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional views showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not be limited here. The scope of protection of the present invention. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in the actual production.

In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

As shown in FIG. 1 and FIG. 2 , the present invention provides an InP-based adiabatic waveguide system suitable for optical communication and millimeter wave communication, which includes: a multiple ridge waveguide structure 8 , the multiple ridge waveguide structure 8 passes through the silicon core 2 connecting conventional silicon ridge waveguide structures);

The multiple ridge waveguide structure 8 and the conventional silicon ridge waveguide structure 9 include a first silicon dioxide cladding layer 1, a silicon core 2, a first air cladding layer 3, and a first InP cladding layer 4. The first silicon dioxide cladding layer Cladding layer 1, the first silicon dioxide cladding layer 1 is connected to the silicon core 2, the silicon core 2 is connected to the first air cladding layer 3, and the first air cladding layer 3 is connected to the first InP cladding layer 4;

The first InP cladding layer 4 is connected to the second InP cladding layer 5 , the second InP cladding layer 5 is connected to the third InP cladding layer 6 , and the third InP cladding layer 6 is connected to the second silicon dioxide cladding layer 7 .

The thickness of the first silicon dioxide cladding layer 1 is h ₁ , the refractive index n _SiO2 = 1.445, the thickness of the silicon core 2 is h ₂ , the refractive index n _si = 3.455, the thickness of the first air cladding layer 3 is h ₃ , the refractive index The ratio n _Air =1, the thickness of the first InP cladding 4 is h ₄ , the refractive index n _InP1 =3.1825, the thickness of the second InP cladding 5 is h ₅ , the refractive index n _InP2 =3.4195, the third InP cladding 6 The thickness of the second silicon dioxide cladding layer 7 is h ₆ , the refractive index n _InP3 =3.1787, the thickness of the second silicon dioxide cladding layer 7 is h ₇ , the refractive index n _SiO2 =1.445, wherein in this embodiment, h ₁ =1000nm, h ₂ =80nm , h ₃ =420 nm, h ₄ =150 nm, h ₅ =396 nm, h ₆ =1500 nm, h ₇ =1000 nm.

As shown in FIG. 3 , the silicon core 2 realizes beam propagation including two outer tapered waveguides 21 , two sub-outside tapered waveguides 22 inside the two outer tapered waveguides 21 , and two sub-outside tapered waveguides 22 inside the two sub-outside tapered waveguides 22 . The two inner tapered waveguides 23 have an intermediate core tapered waveguide 24 inside the two inner tapered waveguides 23 .

The outer tapered waveguide 21 has a parallel plate waveguide with a width of W _L and a length of L ₁ , and the parallel plate waveguide is connected with a first tapered waveguide with a width reduced from W _L to 0 and a length of L ₂ ;

The secondary outer tapered waveguide 22 has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a second tapered waveguide with a width reduced from W _L to W ₁ =W _L /2 and a length L ₂ , the second tapered waveguide is connected with a third tapered waveguide with a width reduced from W ₁ =W _L /2 to 0 and a length L ₃ ;

The inner tapered waveguide 23 has a parallel plate waveguide with a width of W _L and a length of L ₁ . The parallel plate waveguide is connected with a fourth tapered waveguide with a width reduced from W _L to W ₂ =2W _L /3 and a length of L ₂ . The fourth tapered waveguide is connected with W ₂ =2W _L /3 reduced to W ₃ =W _L /3, the fifth tapered waveguide of length L ₃ is connected with W ₃ =W _L /3 reduced to 0, the sixth tapered waveguide of length L ₄ ;

The intermediate core tapered waveguide 24 has a parallel-plate waveguide with a width W _L and a length L ₁ , and the parallel-plate waveguide is connected to a parallel-plate waveguide with a width increasing from W _L to W ₁ =(3W _L +W _R )/4 and a length L ₂ . Seven tapered waveguides, the seventh tapered waveguide is connected with an eighth tapered waveguide whose width increases from W ₁ to W ₂ =(W _L +W _R )/2, and the length is L ₃ , and the eighth tapered waveguide is connected with The width increases from W ₂ to W ₃ =(W _L +3W _R )/4, and a ninth tapered waveguide with a length of _{L 4} is connected to a ninth tapered waveguide with a width increased from W ₃ to WR with a length of The tenth tapered waveguide of L ₅ .

In this embodiment, W _L is the multiple ridge waveguide at the input end, W _L = 0.2 μm, the waveguide gap spacing g = 0.45 μm, W _R is the width of the ridge waveguide at the output end, W _R = 1.5 μm, and the wavelength of the light beam is 1.564 μm.

Fig. 4 and Fig. 5 are the attempts of the InP-based adiabatic guided wave system under actual working conditions.

The length of each segment in the structure of the present invention can be arbitrarily selected, and an InP-based adiabatic guided wave system that can realize lossless transmission of energy information can be designed. Taking the design length of L ₁ =L ₂ =L ₃ =L ₄ =L ₅ =50μm as an example, the power transmission efficiency curves of the TE0 mode input and TE0 mode output of the InP-based adiabatic guided wave system can be obtained through simulation, as shown in the figure 6, which gives the corresponding power transfer efficiency for different lengths. As can be seen from the figure, a total length of 750μm can achieve 90% power transfer efficiency, if you want to achieve higher power transfer efficiency, select a longer length from Figure 6, if you want to achieve 95% power For transmission efficiency, a total length of 1500 μm is required. For practical applications, it is necessary to select different lengths according to the application requirements, so as to realize the design of a compact InP-based adiabatic guided wave system in the field of optical communication and millimeter wave communication.

L ₁ , L ₂ , L ₃ , L ₄ and L ₅ are the design lengths of each segment, and they are spliced together as their respective independent and complete structures to form the final InP-based adiabatic guided wave system. Different L ₁ , L ₂ , L ₃ , L ₄ and L ₅ affect the "absolute length" of each segment, and the "overall shape" of the final InP-based adiabatic guided wave system is determined by the "relative length" of each segment. The “absolute length” can be used to obtain the “relative length” of the final InP-based adiabatic guided wave system. For example, the total length of 750 μm to achieve 90% transmission efficiency is the “relative length” of the final InP-based adiabatic guided wave system. This length can be used for The actual processing and manufacturing, the test transmission efficiency can reach 90%.

Although the present invention has been described above with reference to the embodiments, various modifications may be made and equivalents may be substituted for parts thereof without departing from the scope of the invention. In particular, as long as there is no structural conflict, the various features in the disclosed embodiments of the present invention can be combined with each other in any way, and the description of these combinations is not exhaustive in this specification. For the sake of omitting space and saving resources. Therefore, the present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims (6)

1. An InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication, characterized in that it comprises: a multiple ridge waveguide structure (8), the multiple ridge waveguide structure (8) being connected through a silicon core (2) conventional silicon ridge waveguide structure (9); The multiple ridge waveguide structure (8) and the conventional silicon ridge waveguide structure (9) all include a first silicon dioxide cladding layer (1), a silicon core (2), a first air cladding layer (3), and a first InP cladding layer Layer (4), said first silica cladding (1), said first silica cladding (1) connected to a silicon core (2), said silicon core (2) connected to a first air cladding (3), the first air cladding layer (3) is connected to the first InP cladding layer (4); The first InP cladding layer (4) is connected to a second InP cladding layer (5), the second InP cladding layer (5) is connected to a third InP cladding layer (6), and the third InP cladding layer (6) A second silica cladding (7) is attached. 2. An InP-based thermally insulated waveguide system suitable for optical communication and millimeter wave communication according to claim 1, characterized in that, the thickness of the first silicon dioxide cladding layer (1) is h ₁ , and the refraction ratio n _SiO2 =1.445, the thickness of the silicon core (2) is h ₂ , the refractive index n _si =3.455, the thickness of the first air cladding (3) is h ₃ , the refractive index n _Air =1, so The thickness of the first InP cladding layer (4) is h ₄ , the refractive index n _InP1 =3.1825, the thickness of the second InP cladding layer (5) is h ₅ , the refractive index n _InP2 =3.4195, the third InP The thickness of the cladding layer (6) is h ₆ , the refractive index n _InP3 =3.1787, the thickness of the second silicon dioxide cladding layer ( 7 ) is h ₇ , and the refractive index n _SiO2 =1.445. 3. An InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication according to claim 1, wherein the silicon core (2) realizes beam propagation comprising two outer tapered waveguides ( 21), two sub-outside tapered waveguides (22) are arranged inside the two outer tapered waveguides (21), and two inner tapered waveguides (23) are arranged inside the two sub-outside tapered waveguides (22) , the two inner tapered waveguides (23) have an intermediate core tapered waveguide (24) on the inner side. 4. The InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication according to claim 1, characterized in that the h ₁ , h ₂ , h ₃ , h 4 , h ₅ , h ₆ , h The value range of ₇ is 20nm to 2000nm. 5. The InP-based adiabatic waveguide system suitable for optical communication and millimeter wave communication according to claim 3, wherein the outer tapered waveguide (21) has a width W _L and a length L ₁ The parallel plate waveguide is connected with a first tapered waveguide with a width reduced from W _L to 0 and a length of L ₂ ; The secondary outer tapered waveguide (22) has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a width reduced from W _L to W ₁ =W _L /2 and a length L ₂ the second tapered waveguide, the second tapered waveguide is connected with a third tapered waveguide with a width reduced from W ₁ =W _L /2 to 0 and a length L ₃ ; The inner tapered waveguide (23) has a parallel plate waveguide with a width W _L and a length L ₁ , and the parallel plate waveguide is connected with a width reduced from W _L to W ₂ =2W _L /3, and the length is L ₂ A fourth tapered waveguide connected with a fifth tapered waveguide with W ₂ =2W _L /3 reduced to W ₃ =W _L /3, length L ₃ , the fifth tapered waveguide connected With W ₃ =W _L /3 reduced to 0, the sixth tapered waveguide of length L ₄ ; The intermediate core tapered waveguide (24) has a parallel plate waveguide of width W _L and length L ₁ , and the parallel plate waveguide is connected with a width increasing from W _L to W ₁ =(3W _L +W _R )/4 and a length of The seventh tapered waveguide of L ₂ is connected with the eighth tapered waveguide whose width increases from W ₁ to W ₂ =(W _L +W _R )/2, and the length is L ₃ , so The eighth tapered waveguide is connected with a ninth tapered waveguide whose width increases from W ₂ to W ₃ =(W _L +3W _R )/4, and the length is L ₄ , and the ninth tapered waveguide is connected with a width from W ₃ increases to W _R , tenth tapered waveguide of length L ₅ . 6 . The InP-based adiabatic guided wave system suitable for optical communication and millimeter wave communication according to claim 5 , wherein the values of L1 , L2 , L3 and L4 are all in the range of 20 μm to 2000 μm. 7 .

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