CN115044965B - Doping device for CZ method crystal pulling and application method thereof - Google Patents
Doping device for CZ method crystal pulling and application method thereof Download PDFInfo
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- CN115044965B CN115044965B CN202210846425.9A CN202210846425A CN115044965B CN 115044965 B CN115044965 B CN 115044965B CN 202210846425 A CN202210846425 A CN 202210846425A CN 115044965 B CN115044965 B CN 115044965B
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000002019 doping agent Substances 0.000 claims abstract description 30
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 19
- 229910052742 iron Inorganic materials 0.000 claims abstract description 15
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005389 magnetism Effects 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052786 argon Inorganic materials 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 40
- 239000000463 material Substances 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a doping device for CZ method crystal pulling and a use method thereof, the doping device comprises a heavy hammer and a lifting rope, the lifting rope is arranged at the top of the heavy hammer, a lantern ring is fixedly sleeved on the surface of the heavy hammer, a connecting rod is fixedly connected to the surface of the lantern ring, a doping cup is fixedly arranged at one end of the connecting rod, a silicon wafer is movably connected to the inner wall of the doping cup, a support frame is fixedly connected to the bottom of the doping cup, a first blanking plate and a second blanking plate are respectively and movably sleeved on the surface of the support frame, a ferrite magnetic block is fixedly embedded at the bottom of the first blanking plate, and an iron block is fixedly embedded at the bottom of the second blanking plate. The method has the advantage of stable doping, and solves the problems that the existing doping method firstly needs longer time and consumes labor, electricity and other production costs, and secondly, the method is unstable in doping, the crystalline silicon wafer is easy to crack when heated, so that the doping agent is blown into the furnace barrel by argon, and the doping agent cannot be effectively supplemented.
Description
Technical Field
The invention relates to the technical field of CZ method monocrystalline silicon manufacturing, in particular to a doping device for CZ method crystal pulling and a use method thereof.
Background
The conventional method for supplementing the dopant for the silicon single crystal is to put a cover, control the temperature of the liquid level in a single crystal furnace to reach a solid-liquid conversion critical point, immerse seed crystals into the liquid level, slowly crystallize the seed crystals at a given descending speed to form a reversely buckled umbrella-shaped crystalline silicon wafer, slowly lift the crystalline silicon wafer after cooling, place the dopant in an umbrella cover of the crystalline silicon wafer, and cover the top of the crystalline silicon wafer with a silicon material to prevent argon blowing. Slowly lowering the crystalline silicon wafer into the silicon liquid for dissolution, and the method is called cap placing.
In the process of placing the cover, the phenomenon of crystallization of silicon liquid in the crucible is easy to occur, after crystallization, seed crystals, heavy hammers and tungsten filament ropes are adhered by crystal wafers, the crystal wafers in the crucible cannot be melted in time, the tungsten filament ropes are knotted and broken, the heavy hammers fall into the crucible, and the quartz crucible is broken, so that production accidents are caused.
The existing doping method firstly needs longer time and consumes labor, electricity and other production costs, and secondly, the doping method is unstable, the crystalline silicon wafer is easy to crack when heated, so that the doping agent is blown into the furnace barrel by argon, and the doping agent cannot be effectively supplemented.
Disclosure of Invention
The invention aims to provide a doping device for CZ method crystal pulling and a use method thereof, which have the advantage of stable doping, and solve the problems that the existing doping method firstly needs longer time and consumes labor, electricity consumption and other production costs, and secondly, the doping method is unstable, a crystalline silicon wafer is easy to crack when heated, so that a doping agent is blown into a furnace by argon, and the doping agent cannot be effectively supplemented.
In order to achieve the above purpose, the present invention provides the following technical solutions: the utility model provides a add and mix device for CZ method crystal pulling, includes weight and lifting rope, the lifting rope is installed in the top of weight, the fixed surface cover of weight is equipped with the lantern ring, the fixed surface of lantern ring is connected with the connecting rod, the one end fixed mounting of connecting rod has and adds and mix the cup, add the inner wall swing joint who mixes the cup has the silicon chip, add the bottom fixedly connected with support frame that mixes the cup, the support frame surface movable sleeve respectively is equipped with first flitch and second flitch, the fixed iron oxide magnetic path that inlays in bottom of first flitch, the fixed iron block that inlays in bottom of second flitch.
In order to facilitate the silicon wafer to enter the quartz crucible, the bottom of the silicon wafer is preferably movably connected with the tops of the first blanking plate and the second blanking plate respectively as the doping device for CZ method crystal pulling.
In order to prevent the lifting rope from melting, the doping device for CZ method crystal pulling is preferably used for the invention, and the lifting rope is made of tungsten wires.
In order to facilitate the high temperature resistance of the heavy hammer, the material of the heavy hammer is preferably molybdenum as a doping device for CZ method crystal pulling.
In order to prevent the lantern ring, the connecting rod, the doping cup, the supporting frame, the first blanking plate and the second blanking plate from melting, the doping device for CZ method crystal pulling is preferably used, and the lantern ring, the connecting rod, the doping cup, the supporting frame, the first blanking plate and the second blanking plate are all made of quartz.
In order to facilitate the rotation of the first blanking plate and the second blanking plate, as a doping device for CZ method crystal pulling, the opposite sides of the first blanking plate and the second blanking plate are preferably movably connected, and the tops of the first blanking plate and the second blanking plate are movably connected with the bottom of a doping cup.
In order to facilitate rapid melting of the silicon wafer, a thickness of the silicon wafer is preferably 0.3mm as a doping apparatus for CZ process crystal pulling according to the present invention.
Preferably, a method of using a doping apparatus for CZ process crystal pulling includes the steps of:
1) A silicon wafer is placed at the bottom of the inner cavity of the doping cup in advance, the silicon wafer can seal a gap at the bottom of the doping cup, and the doping agent is poured into the inner cavity of the doping cup after the placement is completed;
2) The heavy hammer is hung into the single crystal furnace through the hanging rope, the heavy hammer drives the doping cup to enter the single crystal furnace through the lantern ring and the connecting rod, high temperature inside the single crystal furnace is radiated onto the doping cup, the first blanking plate, the second blanking plate, the iron block and the ferrite magnet, and when the temperature of the ferrite magnet reaches 450 ℃, the magnetism of the ferrite magnet temporarily disappears;
3) The iron oxide magnetic block is not adsorbed on the iron block after the magnetism of the iron oxide magnetic block disappears, the doping agent drives the silicon wafer to move downwards, the silicon wafer drives the first blanking plate and the second blanking plate to rotate, the first blanking plate and the second blanking plate are opened, and the silicon wafer and the doping agent enter the quartz crucible to dope liquid monocrystalline silicon.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention solves the problems that the prior doping method firstly needs longer time and consumes labor, electricity consumption and other production costs, and secondly, the doping method is unstable, the crystalline silicon wafer is easy to crack when being heated, so that the doping agent is blown into the furnace barrel by argon, and the doping agent cannot be effectively supplemented.
2. According to the invention, through the matched use of the heavy hammer and the lifting rope, the doping cup can be conveniently placed into the single crystal furnace, through the matched use of the lantern ring and the connecting rod, the doping cup can be conveniently supported, through the arrangement of the doping cup, the doping agent can be conveniently stored, through the arrangement of the silicon wafer, the gap at the bottom of the doping cup can be conveniently sealed, through the arrangement of the supporting frame, the rotation of the second blanking plate and the first blanking plate can be conveniently realized, and through the matched use of the ferrite magnet and the iron block, the silicon wafer and the doping agent can be conveniently and automatically discharged after the high-temperature demagnetization.
Drawings
FIG. 1 is a bottom isometric view of the present invention in a closed position;
FIG. 2 is a top view of the present invention in a closed position;
FIG. 3 is a schematic diagram of the doping state of the present invention.
In the figure: 1. a heavy hammer; 2. a collar; 3. a connecting rod; 4. a hanging rope; 5. a support frame; 6. adding a mixing cup; 7. a first blanking plate; 8. a second blanking plate; 9. iron blocks; 10. a ferrite magnet; 11. and (3) a silicon wafer.
Detailed Description
Referring to fig. 1-3, a doping device for pulling crystal by CZ method comprises a weight 1 and a lifting rope 4, wherein the lifting rope 4 is installed at the top of the weight 1, a lantern ring 2 is fixedly sleeved on the surface of the weight 1, a connecting rod 3 is fixedly connected with the surface of the lantern ring 2, a doping cup 6 is fixedly installed at one end of the connecting rod 3, a silicon wafer 11 is movably connected with the inner wall of the doping cup 6, a supporting frame 5 is fixedly connected with the bottom of the doping cup 6, a first blanking plate 7 and a second blanking plate 8 are movably sleeved on the surface of the supporting frame 5 respectively, a ferrite magnet 10 is fixedly embedded at the bottom of the first blanking plate 7, and an iron block 9 is fixedly embedded at the bottom of the second blanking plate 8.
In this embodiment: the method comprises the steps that a silicon wafer 11 is placed at the bottom of an inner cavity of a doping cup 6 in advance, the silicon wafer 11 can seal a gap at the bottom of the doping cup 6, doping agents are poured into the inner cavity of the doping cup 6 after placement is completed, a heavy hammer 1 is hung into a single crystal furnace through a hanging rope 4, the heavy hammer 1 drives the doping cup 6 to enter the single crystal furnace through a lantern ring 2 and a connecting rod 3, high temperature inside the single crystal furnace is radiated onto the doping cup 6, a first blanking plate 7, a second blanking plate 8, an iron block 9 and a ferrite magnetic block 10, when the temperature of the ferrite magnetic block 10 reaches 450 ℃, the magnetism of the ferrite magnetic block 10 temporarily disappears, the iron block 9 is not adsorbed after the magnetism of the ferrite magnetic block 10 disappears, the doping agents drive the silicon wafer 11 to move downwards, the silicon wafer 11 drives the first blanking plate 7 and the second blanking plate 8 to rotate, the first blanking plate 7 and the second blanking plate 8 are opened, and the silicon wafer 11 and the doping agents enter a quartz crucible to dope liquid single crystal silicon.
As a technical optimization scheme of the invention, the bottoms of the silicon wafers 11 are respectively and movably connected with the tops of the first blanking plate 7 and the second blanking plate 8.
In this embodiment: the silicon chip 11 is movably connected with the first blanking plate 7 and the second blanking plate 8, and when the first blanking plate 7 and the second blanking plate 8 are rotationally separated, the silicon chip 11 can move downwards to be separated from the doping cup 6.
As a technical optimization scheme of the invention, the material of the lifting rope 4 is tungsten wire, and the material of the heavy hammer 1 is molybdenum.
In this embodiment: the material of the lifting rope 4 is tungsten wire, and the material of the heavy hammer 1 is molybdenum, so that the lifting rope 4 and the heavy hammer 1 can resist high temperature.
As a technical optimization scheme of the invention, the lantern ring 2, the connecting rod 3, the doping cup 6, the supporting frame 5, the first blanking plate 7 and the second blanking plate 8 are all made of quartz.
In this embodiment: the lantern ring 2, the connecting rod 3, the doping cup 6, the supporting frame 5, the first blanking plate 7 and the second blanking plate 8 are all made of quartz, so that the structure is prevented from entering the single crystal furnace and being melted at high temperature in the single crystal furnace.
As a technical optimization scheme of the invention, one side of the first blanking plate 7 opposite to the second blanking plate 8 is movably connected, and the top of the first blanking plate 7 and the top of the second blanking plate 8 are movably connected with the bottom of the doping cup 6.
In this embodiment: the first blanking plate 7 and the second blanking plate 8 are sealed at the bottom of the doping cup 6 to support the doping agent, prevent the doping agent from falling when the doping agent does not reach the doping position in the single crystal furnace, and release the doping agent when the first blanking plate 7 and the second blanking plate 8 rotate.
As a technical optimization scheme of the invention, the thickness of the silicon wafer 11 is 0.3mm.
In this embodiment: the thickness of the silicon wafer 11 is 0.3mm, so that the silicon wafer 11 can be quickly melted in monocrystalline silicon liquid, and the silicon wafer 11 is not influenced to be separated from the doping cup 6.
A method for using a doping device for CZ method crystal pulling, comprising the following steps:
1) A silicon wafer 11 is placed at the bottom of the inner cavity of the doping cup 6 in advance, the silicon wafer 11 can seal a gap at the bottom of the doping cup 6, and the doping agent is poured into the inner cavity of the doping cup 6 after the placement is finished;
2) The heavy hammer 1 is hung into the single crystal furnace through the hanging rope 4, the heavy hammer 1 drives the doping cup 6 to enter the single crystal furnace through the lantern ring 2 and the connecting rod 3, high temperature inside the single crystal furnace is radiated onto the doping cup 6, the first blanking plate 7, the second blanking plate 8, the iron block 9 and the ferrite magnet 10, and when the temperature of the ferrite magnet 10 reaches 450 ℃, the magnetism of the ferrite magnet 10 temporarily disappears;
3) The iron oxide magnetic block 10 is not adsorbed on the iron block 9 after the magnetism disappears, the doping agent drives the silicon wafer 11 to move downwards, the silicon wafer 11 drives the first blanking plate 7 and the second blanking plate 8 to rotate, the first blanking plate 7 and the second blanking plate 8 are opened, and the silicon wafer 11 and the doping agent enter the quartz crucible to dope liquid monocrystalline silicon.
To sum up: according to the doping device for CZ method crystal pulling and the application method thereof, the problems that the existing doping method is long in time, labor, electricity consumption and other production costs, the doping is unstable, the crystalline silicon wafer is easy to crack when being heated, and the doping agent is blown into the furnace by argon, and the doping agent cannot be effectively supplemented are solved through the cooperation of the lantern ring 2, the connecting rod 3, the supporting frame 5, the doping cup 6, the first blanking plate 7, the second blanking plate 8, the iron block 9, the ferrite magnet 10 and the silicon wafer 11.
Claims (2)
1. A add and mix device for CZ method crystal pulling, includes weight (1) and lifting rope (4), lifting rope (4) install in the top of weight (1), its characterized in that: the surface fixing sleeve of the heavy hammer (1) is provided with a sleeve ring (2), the surface fixing of the sleeve ring (2) is connected with a connecting rod (3), one end of the connecting rod (3) is fixedly provided with a doping cup (6), the inner wall of the doping cup (6) is movably connected with a silicon wafer (11), the bottom of the doping cup (6) is fixedly connected with a supporting frame (5), the surface of the supporting frame (5) is movably sleeved with a first blanking plate (7) and a second blanking plate (8) respectively, the bottom of the first blanking plate (7) is fixedly embedded with a ferrite magnet (10), and the bottom of the second blanking plate (8) is fixedly embedded with an iron block (9);
the bottom of the silicon wafer (11) is respectively and movably connected with the tops of the first blanking plate (7) and the second blanking plate (8);
the lifting rope (4) is made of tungsten wires, the heavy hammer (1) is made of molybdenum, and the lantern ring (2), the connecting rod (3), the doping cup (6), the supporting frame (5), the first blanking plate (7) and the second blanking plate (8) are made of quartz;
one side of the first blanking plate (7) opposite to the second blanking plate (8) is movably connected, and the tops of the first blanking plate (7) and the second blanking plate (8) are movably connected with the bottom of the doping cup (6);
the thickness of the silicon wafer (11) is 0.3mm.
2. The method of using a doping apparatus for CZ pulling as defined in claim 1, wherein: the using method comprises the following steps:
1) A silicon wafer (11) is placed at the bottom of the inner cavity of the doping cup (6) in advance, the silicon wafer (11) can seal a gap at the bottom of the doping cup (6), and the doping agent is poured into the inner cavity of the doping cup (6) after the placement is finished;
2) The heavy hammer (1) is hung into the single crystal furnace through the hanging rope (4), the heavy hammer (1) drives the doping cup (6) to enter the single crystal furnace through the lantern ring (2) and the connecting rod (3), high temperature inside the single crystal furnace is radiated onto the doping cup (6), the first blanking plate (7), the second blanking plate (8), the iron block (9) and the ferrite magnet (10), and when the temperature of the ferrite magnet (10) reaches 450 ℃, the magnetism of the ferrite magnet (10) temporarily disappears;
3) The iron oxide magnetic block (10) is not adsorbed on the iron block (9) after the magnetism disappears, the doping agent drives the silicon wafer (11) to move downwards, the silicon wafer (11) drives the first blanking plate (7) and the second blanking plate (8) to rotate, the first blanking plate (7) and the second blanking plate (8) are opened, and the silicon wafer (11) and the doping agent enter the quartz crucible to dope liquid monocrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210846425.9A CN115044965B (en) | 2022-07-19 | 2022-07-19 | Doping device for CZ method crystal pulling and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210846425.9A CN115044965B (en) | 2022-07-19 | 2022-07-19 | Doping device for CZ method crystal pulling and application method thereof |
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| Publication Number | Publication Date |
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| CN115044965A CN115044965A (en) | 2022-09-13 |
| CN115044965B true CN115044965B (en) | 2023-11-03 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01308757A (en) * | 1988-06-08 | 1989-12-13 | Seiko Epson Corp | Magnet-type closed container |
| CN2766727Y (en) * | 2005-02-03 | 2006-03-29 | 陈维森 | Temperature controlled automatic foodstuff releasing apparatus of cooker |
| CN204022992U (en) * | 2014-05-20 | 2014-12-17 | 银川隆基硅材料有限公司 | The vertical pulling method manufacture order crystal silicon device adding doping agent |
| CN210945851U (en) * | 2019-10-11 | 2020-07-07 | 宁夏协鑫晶体科技发展有限公司 | Pure element doping device for vertical pulling single crystal |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11499245B2 (en) * | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
-
2022
- 2022-07-19 CN CN202210846425.9A patent/CN115044965B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01308757A (en) * | 1988-06-08 | 1989-12-13 | Seiko Epson Corp | Magnet-type closed container |
| CN2766727Y (en) * | 2005-02-03 | 2006-03-29 | 陈维森 | Temperature controlled automatic foodstuff releasing apparatus of cooker |
| CN204022992U (en) * | 2014-05-20 | 2014-12-17 | 银川隆基硅材料有限公司 | The vertical pulling method manufacture order crystal silicon device adding doping agent |
| CN210945851U (en) * | 2019-10-11 | 2020-07-07 | 宁夏协鑫晶体科技发展有限公司 | Pure element doping device for vertical pulling single crystal |
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| CN115044965A (en) | 2022-09-13 |
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