CN115044965A - Doping device for crystal pulling by CZ method and using method thereof - Google Patents
Doping device for crystal pulling by CZ method and using method thereof Download PDFInfo
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- CN115044965A CN115044965A CN202210846425.9A CN202210846425A CN115044965A CN 115044965 A CN115044965 A CN 115044965A CN 202210846425 A CN202210846425 A CN 202210846425A CN 115044965 A CN115044965 A CN 115044965A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 28
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 24
- 229910052742 iron Inorganic materials 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims description 44
- 238000002156 mixing Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005389 magnetism Effects 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 9
- 229910052786 argon Inorganic materials 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a doping device for crystal pulling by a CZ method and a using method thereof, wherein the doping device comprises a heavy hammer and a lifting rope, the lifting rope is arranged at the top of the heavy hammer, a lantern ring is fixedly sleeved on the surface of the heavy hammer, a connecting rod is fixedly connected to the surface of the lantern ring, a doping cup is fixedly arranged at one end of the connecting rod, a silicon wafer is movably connected to the inner wall of the doping cup, a supporting frame is fixedly connected to the bottom of the doping cup, a first blanking plate and a second blanking plate are respectively movably sleeved on the surface of the supporting frame, a ferrite block is fixedly embedded at the bottom of the first blanking plate, and an iron block is fixedly embedded at the bottom of the second blanking plate. The method has the advantage of stable doping, and solves the problems that the conventional doping method firstly consumes a long time, consumes labor and electricity and has the same production cost, and secondly, the doping method is unstable, and a crystalline silicon wafer is easily cracked when heated, so that a dopant is blown into a furnace cylinder by argon and cannot be effectively supplemented.
Description
Technical Field
The invention relates to the technical field of manufacturing of CZ method monocrystalline silicon, in particular to a doping device for CZ method crystal pulling and a using method thereof.
Background
At present, the conventional method for supplementing the dopant for the silicon single crystal is to place a cover, control the liquid level temperature in a single crystal furnace to reach a solid-liquid conversion critical point, immerse a seed crystal into the liquid level, give a descending speed to slowly crystallize the seed crystal to form an inverted umbrella-shaped crystalline silicon wafer, slowly lift out the crystalline silicon wafer after cooling, contain the dopant in the umbrella cover of the crystalline silicon wafer, and press the cover with a silicon material at the top to prevent argon from blowing. Slowly lowering the crystalline silicon wafer into the silicon liquid for dissolving, and the method is called placing a cover.
The phenomenon of silicon liquid crystallization in the crucible is easy to occur in the process of placing the cover, after crystallization, seed crystals, the heavy hammer and the tungsten wire rope are adhered by the crystallization piece, the tungsten wire rope is knotted and broken due to the fact that the crystallization piece in the crucible cannot be melted in time, the heavy hammer falls into the crucible, the quartz crucible is cracked by smashing, and production accidents are caused.
The existing doping method firstly consumes long time, consumes labor, power consumption and other production costs, and secondly, the doping method is unstable, crystalline silicon wafers are easy to crack when heated, so that a doping agent is blown into a furnace cylinder by argon gas, and the doping agent cannot be effectively supplemented.
Disclosure of Invention
The invention aims to provide a doping device for crystal pulling by a CZ method and a using method thereof, which have the advantage of stable doping, and solve the problems that the conventional doping method firstly takes longer time, consumes labor, consumes power and other production costs, secondly, the doping method is unstable, and a crystalline silicon wafer is heated and easily explodes, so that a dopant is blown into a furnace barrel by argon gas, and the dopant cannot be effectively supplemented.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a mix device with for CZ method crystal pulling, includes weight and lifting rope, the lifting rope is installed in the top of weight, the fixed cover in surface of weight is equipped with the lantern ring, the fixed surface of lantern ring is connected with the connecting rod, the one end fixed mounting of connecting rod has the cup of mixing with, the inner wall swing joint who mixes the cup with has the silicon chip, mix the bottom fixedly connected with support frame of cup with, the support frame surface is movable sleeve respectively and is equipped with first flitch and second flitch down, the bottom of first flitch is fixed to be inlayed and is had the ferrite block, the bottom of second flitch is fixed to be inlayed and is had the iron block.
In order to facilitate the silicon wafers to enter the quartz crucible, the doping device for crystal pulling by the CZ method is preferably used, and the bottoms of the silicon wafers are movably connected with the tops of the first feeding plate and the second feeding plate respectively.
In order to facilitate the prevention of the melting of the lift cord, it is preferred as an admixture device for use in the crystal pulling of the CZ method of the present invention that the material of the lift cord is tungsten wire.
In order to make the weight resistant to high temperatures, the material of the weight is preferably molybdenum as an addition device according to the invention for crystal pulling by the CZ method.
In order to prevent the lantern ring, the connecting rod, the adding and mixing cup, the support frame, the first blanking plate and the second blanking plate from melting, the lantern ring, the connecting rod, the adding and mixing cup, the support frame, the first blanking plate and the second blanking plate are preferably made of quartz.
In order to facilitate the first blanking plate and the second blanking plate to rotate, the doping device for crystal pulling by the CZ method is preferably used, one sides of the first blanking plate and the second blanking plate, which are opposite, are movably connected, and the tops of the first blanking plate and the second blanking plate are movably connected with the bottom of the doping cup.
In order to facilitate rapid melting of the silicon wafer, it is preferred that the silicon wafer has a thickness of 0.3mm as an adding apparatus for pulling a crystal by the CZ method of the present invention.
Preferably, the use method of the doping device for pulling crystals by the CZ method comprises the following steps:
1) placing a silicon wafer at the bottom of the inner cavity of the doping cup in advance, wherein the silicon wafer can seal a gap at the bottom of the doping cup, and pouring a doping agent into the inner cavity of the doping cup after the silicon wafer is placed;
2) the heavy hammer is hung into the single crystal furnace through a hanging rope, the heavy hammer drives the adding and mixing cup to enter the single crystal furnace through a lantern ring and a connecting rod, high temperature inside the single crystal furnace radiates to the adding and mixing cup, the first blanking plate, the second blanking plate, the iron block and the ferrite block, and when the temperature of the ferrite block reaches 450 ℃, the magnetism of the ferrite block disappears temporarily;
3) after the magnetism of the ferrite block disappears, the ferrite block is not adsorbed, the doping agent is added to drive the silicon wafer to move downwards, the silicon wafer drives the first blanking plate and the second blanking plate to rotate, the first blanking plate and the second blanking plate are opened, and the silicon wafer and the doping agent enter the quartz crucible to dope the liquid monocrystalline silicon.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, through the matching use of the lantern ring, the connecting rod, the supporting frame, the doping cup, the first blanking plate, the second blanking plate, the iron block, the ferrite block and the silicon wafer, the problems that the existing doping method firstly consumes a long time and consumes labor and electricity and the like, secondly, the doping method is unstable, the crystalline silicon wafer is easily cracked when being heated, so that a dopant is blown into a furnace cylinder by argon gas, and the dopant cannot be effectively supplemented are solved.
2. According to the invention, through the matching use of the heavy hammer and the lifting rope, the doping cup can be conveniently placed into the single crystal furnace, through the matching use of the lantern ring and the connecting rod, the doping cup can be conveniently supported, through the arrangement of the doping cup, the doping agent can be conveniently stored, through the arrangement of the silicon wafer, a gap at the bottom of the doping cup can be conveniently sealed, through the arrangement of the supporting frame, the rotation of the second feeding plate and the first feeding plate can be conveniently realized, through the matching use of the ferrite block and the iron block, the silicon wafer and the doping agent can be conveniently and automatically discharged after high-temperature demagnetization.
Drawings
FIG. 1 is a bottom isometric view of the present invention in a closed position;
FIG. 2 is a top view of the closed state of the present invention;
FIG. 3 is a schematic view of the doping state of the present invention.
In the figure: 1. a weight; 2. a collar; 3. a connecting rod; 4. a lifting rope; 5. a support frame; 6. adding a mixing cup; 7. a first blanking plate; 8. a second blanking plate; 9. an iron block; 10. a ferrite magnetic block; 11. and (3) a silicon wafer.
Detailed Description
Referring to fig. 1-3, an adding and mixing device for crystal pulling by CZ method comprises a heavy hammer 1 and a lifting rope 4, wherein the lifting rope 4 is installed on the top of the heavy hammer 1, a lantern ring 2 is fixedly sleeved on the surface of the heavy hammer 1, a connecting rod 3 is fixedly connected to the surface of the lantern ring 2, an adding and mixing cup 6 is fixedly installed at one end of the connecting rod 3, a silicon wafer 11 is movably connected to the inner wall of the adding and mixing cup 6, a support frame 5 is fixedly connected to the bottom of the adding and mixing cup 6, a first blanking plate 7 and a second blanking plate 8 are respectively movably sleeved on the surface of the support frame 5, a ferrite block 10 is fixedly embedded at the bottom of the first blanking plate 7, and an iron block 9 is fixedly embedded at the bottom of the second blanking plate 8.
In this embodiment: the silicon chip 11 is placed at the bottom of the inner cavity of the doping cup 6 in advance, the silicon chip 11 can seal the gap at the bottom of the doping cup 6, the doping agent is poured into the inner cavity of the doping cup 6 after the placement is finished, the heavy hammer 1 is hung into the single crystal furnace through the hanging rope 4, the heavy hammer 1 drives the adding and mixing cup 6 to enter the single crystal furnace through the lantern ring 2 and the connecting rod 3, the high temperature inside the single crystal furnace radiates to the adding and mixing cup 6, the first blanking plate 7, the second blanking plate 8, the iron block 9 and the ferrite block 10, when the temperature of the ferrite magnetic block 10 reaches 450 ℃, the magnetism of the ferrite magnetic block 10 disappears temporarily, the iron block 9 is not adsorbed after the magnetism of the ferrite magnetic block 10 disappears, the doping agent is added to drive the silicon wafer 11 to move downwards, the silicon wafer 11 drives the first blanking plate 7 and the second blanking plate 8 to rotate, the first blanking plate 7 and the second blanking plate 8 are opened, and the silicon wafer 11 and the doping agent enter the quartz crucible to dope the liquid monocrystalline silicon.
As a technical optimization scheme of the invention, the bottoms of the silicon wafers 11 are movably connected with the tops of the first blanking plate 7 and the second blanking plate 8 respectively.
In this embodiment: the silicon chip 11 is movably connected with the first blanking plate 7 and the second blanking plate 8, and when the first blanking plate 7 and the second blanking plate 8 rotate to be separated, the silicon chip 11 can move downwards to be separated from the adding and mixing cup 6.
As a technical optimization scheme of the invention, the lifting rope 4 is made of tungsten wires, and the heavy hammer 1 is made of molybdenum.
In this embodiment: the lifting rope 4 is made of tungsten wires, and the heavy hammer 1 is made of molybdenum, so that the lifting rope 4 and the heavy hammer 1 can resist high temperature.
As a technical optimization scheme of the invention, the lantern ring 2, the connecting rod 3, the doping cup 6, the support frame 5, the first blanking plate 7 and the second blanking plate 8 are all made of quartz.
In this embodiment: the lantern ring 2, the connecting rod 3, the adding and mixing cup 6, the support frame 5, the first blanking plate 7 and the second blanking plate 8 are made of quartz, so that the structure is prevented from entering the single crystal furnace and being melted by high temperature in the single crystal furnace.
As a technical optimization scheme of the invention, one side of the first blanking plate 7, which is opposite to the second blanking plate 8, is movably connected, and the tops of the first blanking plate 7 and the second blanking plate 8 are movably connected with the bottom of the adding and mixing cup 6.
In this embodiment: the first blanking plate 7 and the second blanking plate 8 seal the bottom of the adding and doping cup 6 to support the adding and doping agent, so that the adding and doping agent is prevented from falling when not reaching the adding and doping position in the single crystal furnace, and the adding and doping agent can be discharged when the first blanking plate 7 and the second blanking plate 8 rotate.
As a technical optimization scheme of the invention, the thickness of the silicon wafer 11 is 0.3 mm.
In this embodiment: the thickness of the silicon wafer 11 is 0.3mm, so that the silicon wafer 11 can be rapidly melted in the monocrystalline silicon liquid, and the silicon wafer 11 is not influenced to be separated from the doping cup 6.
A method of using a dosing apparatus for crystal pulling by the CZ method, comprising the steps of:
1) placing a silicon wafer 11 at the bottom of the inner cavity of the doping cup 6 in advance, wherein the silicon wafer 11 can seal a gap at the bottom of the doping cup 6, and pouring a doping agent into the inner cavity of the doping cup 6 after the placing is finished;
2) the heavy hammer 1 is hung into the single crystal furnace through the hanging rope 4, the heavy hammer 1 drives the adding and mixing cup 6 to enter the single crystal furnace through the lantern ring 2 and the connecting rod 3, high temperature inside the single crystal furnace radiates to the adding and mixing cup 6, the first blanking plate 7, the second blanking plate 8, the iron block 9 and the ferrite block 10, and when the temperature of the ferrite block 10 reaches 450 ℃, the magnetism of the ferrite block 10 disappears temporarily;
3) after the magnetism of the ferrite block 10 disappears, the ferrite block does not adsorb the iron block 9, the doping agent is added to drive the silicon wafer 11 to move downwards, the silicon wafer 11 drives the first blanking plate 7 and the second blanking plate 8 to rotate, so that the first blanking plate 7 and the second blanking plate 8 are opened, and the silicon wafer 11 and the doping agent enter the quartz crucible to dope the liquid monocrystalline silicon.
In summary, the following steps: according to the doping device for crystal pulling by the CZ method and the using method thereof, the lantern ring 2, the connecting rod 3, the supporting frame 5, the doping cup 6, the first blanking plate 7, the second blanking plate 8, the iron block 9, the ferrite block 10 and the silicon wafer 11 are used in a matched mode, and the problems that firstly, the existing doping method is long in time, labor and electricity consumption are consumed, and the like are caused, secondly, doping is unstable, crystalline silicon wafers are heated and prone to cracking, dopants are blown into a furnace barrel by argon, and the dopants cannot be effectively supplemented are solved.
Claims (8)
1. A doping device for pulling crystal by CZ method, comprising a heavy hammer (1) and a lifting rope (4), wherein the lifting rope (4) is installed on the top of the heavy hammer (1), and is characterized in that: the fixed surface of weight (1) is equipped with lantern ring (2) by the cover, the fixed surface of the lantern ring (2) is connected with connecting rod (3), the one end fixed mounting of connecting rod (3) has and adds and mixes cup (6), the inner wall swing joint that adds and mixes cup (6) has silicon chip (11), add bottom fixedly connected with support frame (5) of mixing cup (6), support frame (5) surface activity cover respectively is equipped with flitch (7) and second down flitch (8), the bottom fixed of first flitch (7) is inlayed and is had ferrite block (10), the bottom fixed of flitch (8) is inlayed and is had iron block (9) under the second.
2. An apparatus as claimed in claim 1, wherein the apparatus comprises: the bottoms of the silicon wafers (11) are respectively and movably connected with the tops of the first blanking plate (7) and the second blanking plate (8).
3. An apparatus as claimed in claim 1, wherein the apparatus comprises: the lifting rope (4) is made of tungsten wires.
4. An apparatus as claimed in claim 1, wherein the apparatus comprises: the heavy hammer (1) is made of molybdenum.
5. An apparatus as claimed in claim 1 for adding and doping material for crystal pulling by the CZ method, wherein: the lantern ring (2), the connecting rod (3), the doping cup (6), the support frame (5), the first blanking plate (7) and the second blanking plate (8) are all made of quartz.
6. An apparatus as claimed in claim 1, wherein the apparatus comprises: the opposite sides of the first blanking plate (7) and the second blanking plate (8) are movably connected, and the tops of the first blanking plate (7) and the second blanking plate (8) are movably connected with the bottom of the adding and mixing cup (6).
7. An apparatus as claimed in claim 1, wherein the apparatus comprises: the thickness of the silicon wafer (11) is 0.3 mm.
8. Use of a dosing device for crystal pulling by the CZ method according to any one of claims 1-7, characterized in that: the using method comprises the following steps:
1) placing a silicon wafer (11) at the bottom of the inner cavity of the doping cup (6) in advance, wherein the silicon wafer (11) can seal a gap at the bottom of the doping cup (6), and pouring a doping agent into the inner cavity of the doping cup (6) after the placing is finished;
2) the heavy hammer (1) is hung into the single crystal furnace through the lifting rope (4), the heavy hammer (1) drives the adding and mixing cup (6) to enter the single crystal furnace through the lantern ring (2) and the connecting rod (3), high temperature inside the single crystal furnace radiates to the adding and mixing cup (6), the first blanking plate (7), the second blanking plate (8), the iron block (9) and the ferrimagnet block (10), and when the temperature of the ferrimagnet block (10) reaches 450 ℃, the magnetism of the ferrimagnet block (10) disappears temporarily;
3) after the magnetism of the ferrite block (10) disappears, the ferrite block (9) is not adsorbed, the doping agent is added to drive the silicon wafer (11) to move downwards, the silicon wafer (11) drives the first blanking plate (7) and the second blanking plate (8) to rotate, so that the first blanking plate (7) and the second blanking plate (8) are opened, and the silicon wafer (11) and the doping agent enter the quartz crucible to dope the liquid monocrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210846425.9A CN115044965B (en) | 2022-07-19 | 2022-07-19 | Doping device for CZ method crystal pulling and application method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210846425.9A CN115044965B (en) | 2022-07-19 | 2022-07-19 | Doping device for CZ method crystal pulling and application method thereof |
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| CN115044965A true CN115044965A (en) | 2022-09-13 |
| CN115044965B CN115044965B (en) | 2023-11-03 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01308757A (en) * | 1988-06-08 | 1989-12-13 | Seiko Epson Corp | Magnet-type closed container |
| CN2766727Y (en) * | 2005-02-03 | 2006-03-29 | 陈维森 | Temperature controlled automatic foodstuff releasing apparatus of cooker |
| CN204022992U (en) * | 2014-05-20 | 2014-12-17 | 银川隆基硅材料有限公司 | The vertical pulling method manufacture order crystal silicon device adding doping agent |
| CN210945851U (en) * | 2019-10-11 | 2020-07-07 | 宁夏协鑫晶体科技发展有限公司 | Pure element doping device for vertical pulling single crystal |
| US20220205130A1 (en) * | 2020-12-30 | 2022-06-30 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
-
2022
- 2022-07-19 CN CN202210846425.9A patent/CN115044965B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01308757A (en) * | 1988-06-08 | 1989-12-13 | Seiko Epson Corp | Magnet-type closed container |
| CN2766727Y (en) * | 2005-02-03 | 2006-03-29 | 陈维森 | Temperature controlled automatic foodstuff releasing apparatus of cooker |
| CN204022992U (en) * | 2014-05-20 | 2014-12-17 | 银川隆基硅材料有限公司 | The vertical pulling method manufacture order crystal silicon device adding doping agent |
| CN210945851U (en) * | 2019-10-11 | 2020-07-07 | 宁夏协鑫晶体科技发展有限公司 | Pure element doping device for vertical pulling single crystal |
| US20220205130A1 (en) * | 2020-12-30 | 2022-06-30 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
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| CN115044965B (en) | 2023-11-03 |
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