CN115020191A - Circuit board production method - Google Patents

Circuit board production method Download PDF

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Publication number
CN115020191A
CN115020191A CN202110247599.9A CN202110247599A CN115020191A CN 115020191 A CN115020191 A CN 115020191A CN 202110247599 A CN202110247599 A CN 202110247599A CN 115020191 A CN115020191 A CN 115020191A
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CN
China
Prior art keywords
circuit board
vacuum cavity
inert gas
gas chamber
wafer
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CN202110247599.9A
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Chinese (zh)
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高佳
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Dongguan Fenggu Nanotechnology Co ltd
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Dongguan Fenggu Nanotechnology Co ltd
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Priority to CN202110247599.9A priority Critical patent/CN115020191A/en
Publication of CN115020191A publication Critical patent/CN115020191A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention relates to a circuit board production method, which comprises the following steps: s1, roughly cleaning the surface of the wafer for etching the circuit board; s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity ranges from 5pa to 2 pa; s3, introducing inert gas into the vacuum cavity, wherein the inert gas introduction speed range is 10-5000sccm, and electrifying the graphite electrode, and the electrifying voltage range is 200-5000 v; completing one-time cleaning; according to the invention, the graphite electrode is used as a target source to ionize inert gas and active gas, so that the problem that the metal electrode is used as the target source to damage the surface of the circuit board during cleaning is solved, and the surface dyne value of the circuit board is effectively improved; the inert gas and the active gas are adopted to clean the surface of the circuit board simultaneously, so that the oxidation rate of the surface film of the cleaned circuit board reaches 99.9 percent, the surface of the wafer is cleaned twice, the surface cleanliness of the wafer is ensured, and the using effect of the circuit board is improved.

Description

Circuit board production method
Technical Field
The invention relates to the technical field of circuit boards, in particular to a circuit board production method.
Background
Circuit board refers to a silicon wafer used for making silicon semiconductor circuits, the starting material of which is silicon. High-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed crystals, the silicon crystal seed crystals are slowly pulled out to form cylindrical monocrystalline silicon, a silicon crystal bar is ground, polished and sliced to form a silicon circuit board sheet, namely a circuit board, at present, the domestic circuit board production line mainly takes 8 inches and 12 inches, and the main processing mode of the circuit board is sheet processing and batch processing, namely 1 or more circuit boards are simultaneously processed. With the smaller and smaller characteristic size of the semiconductor, the processing and measuring equipment is more and more advanced, so that the circuit board processing has new data characteristics. Meanwhile, the characteristic size is reduced, so that the influence of the particle number in the air on the quality and the reliability of the processed circuit board is increased when the circuit board is processed, and the particle number has new data characteristics along with the improvement of cleanness.
Among the prior art, when carrying out surface cleaning to the circuit board, often adopt metal electrode, metal electrode takes place the oxidation in letting in the active gas atmosphere, and ionization under the high voltage causes circuit board surface cleaning relatively poor to circuit board surface impact, moreover because the ion beam is mostly frontal impact, can not effectively wash circuit board both sides.
Disclosure of Invention
In view of the above, the present invention is directed to a method for producing a circuit board, so as to solve the problem that the surface cleanliness of the circuit board is poor due to the fact that a metal electrode is usually used when the surface of the circuit board is cleaned, the metal electrode is oxidized in an atmosphere of introducing active gas, and is ionized under high voltage to impact the surface of the circuit board.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a method of producing a circuit board comprising the steps of:
s1, roughly cleaning the surface of the wafer for etching the circuit board;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree range in the vacuum cavity is 5pa-2 pa;
s3, introducing inert gas into the vacuum cavity, introducing constant-temperature cooling water into the graphite electrode at a speed ranging from 10sccm to 5000sccm, rotating the cage provided with the substrate at a high speed, rotating the cylindrical target material at the same time, connecting the negative high voltage of a power supply to the graphite electrode by the magnetic field facing the substrate through the insulating electrode, electrifying the graphite electrode, wherein the electrifying voltage range is 200-5000 v;
s4, introducing active gas into the vacuum cavity, wherein the introduction speed of the active gas ranges from 10sccm to 5000sccm, the cleaning time is 0.5h to 2h, and one-time cleaning is completed;
s5, placing the wafer after primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity ranges from 5pa to 2 pa;
s6, introducing inert gas into the inert gas chamber, wherein the inert gas introduction speed range is 10-5000sccm, and introducing active gas into the active gas chamber, wherein the active gas introduction speed range is 10-5000 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage range is 200-5000 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed range is 0.2-0.6r/min, the cleaning time is 1.5-2h, and the secondary cleaning is completed;
and S9, patterning and etching the surface of the cleaned wafer.
Preferably, in the step S1, the wafer surface is roughly cleaned by placing the circuit board into an NMP solution to perform degumming to remove colloidal objects on the surface of the circuit board.
Preferably, in step S2, a rotating frame is disposed in the vacuum chamber, and the rotating frame rotates the circuit board from the inert gas chamber to the active gas chamber.
Preferably, the inert gas in step S3 and step S6 is any one of helium, neon, argon, krypton, xenon, and radon.
Preferably, the active gas in steps S4 and S6 is oxygen.
Preferably, the etching step in the step S9 is performed by using a resin system with a specific form; adopting a mold matched with the appearance of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly pouring or compression molding the appearance of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
Compared with the prior art, the circuit board production method has the following advantages:
1. the graphite electrode is used as a target source to ionize inert gas and active gas, so that the problem that the metal electrode is used as the target source to damage the surface of the circuit board during cleaning is solved, and the surface dyne value of the circuit board is effectively improved;
2. inert gas and active gas are adopted to clean the surface of the circuit board simultaneously, so that the oxidation rate of the surface film of the cleaned circuit board can reach 99.9 percent;
3. the surface of the wafer is cleaned twice, so that the surface cleanliness of the wafer is ensured, and the use effect of the circuit board is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments of the present invention will be briefly described below. Wherein the drawings are only for purposes of illustrating some embodiments of the invention and are not to be construed as limiting the invention to all embodiments thereof.
FIG. 1 is a flow chart of circuit board cleaning according to a fourth embodiment of the present invention;
FIG. 2 is a diagram of a cleaning apparatus for circuit boards according to a fourth embodiment of the present invention;
FIG. 3 is a diagram illustrating the distribution of substances during the cleaning process of the circuit board according to the present invention;
FIG. 4 is a schematic view of a circuit board cleaning system of the present invention;
fig. 5 is a schematic view of an ion distribution region in a cleaning system of the present invention.
Reference numerals:
1. a main body; 2. a cavity; 3. a vacuum pump set; 4. a separator plate; 5. a flexible joint; 6. a rotating frame; 7. a graphite electrode; 8. an inert gas box; 9. an electromagnetic valve; 10. a vacuum degree detector; 11. a high voltage power supply; 12. and a reactive gas box.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
The first embodiment is as follows:
a method of producing a circuit board comprising the steps of:
s1, placing the surface of the wafer for etching the circuit board into an NMP solution for degumming;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 5 pa;
s3, introducing argon into the vacuum cavity at a speed of 10sccm, and electrifying the graphite electrode at an electrifying voltage of 200 v;
s4, introducing oxygen into the vacuum cavity at a speed of 10sccm for 0.5h to complete one-time cleaning;
s5, placing the wafer subjected to primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 5 pa;
s6, introducing argon into the inert gas chamber at a speed of 10sccm, and introducing oxygen into the active gas chamber at a speed of 10 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage is 200 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed is 0.2r/min, the cleaning time is 1.5h, and secondary cleaning is completed;
s9, etching the cleaned wafer, wherein the etching step is to use a resin system with a specific form; adopting a mold matched with the appearance of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly pouring or compression molding the appearance of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
Example two:
on the basis of the first embodiment, the circuit board production method of the first embodiment is further optimized:
a method of producing a circuit board, comprising the steps of:
s1, placing the surface of the wafer for etching the circuit board into an NMP solution for degumming;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 4 pa;
s3, introducing argon into the vacuum cavity at a speed of 500sccm, and electrifying the graphite electrode at an electrifying voltage of 500 v;
s4, introducing oxygen into the vacuum cavity at a speed of 500sccm for 1h to complete one-time cleaning;
s5, placing the wafer after primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 4 pa;
s6, introducing argon into the inert gas chamber at a speed of 500sccm, and introducing oxygen into the active gas chamber at a speed of 500 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage is 500 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed is 0.5r/min, the cleaning time is 1.5h, and secondary cleaning is completed;
s9, etching the cleaned wafer, wherein the etching step is to use a resin system with a specific form; adopting a mold matched with the appearance of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly pouring or compression molding the appearance of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
Example three:
on the basis of the first embodiment, the circuit board production method of the first embodiment is further optimized:
a method of producing a circuit board, comprising the steps of:
s1, placing the surface of the wafer for etching the circuit board into an NMP solution for degumming;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 3 pa;
s3, introducing argon into the vacuum cavity at a speed of 2500sccm, and electrifying the graphite electrode at an electrifying voltage of 2500 v;
s4, introducing oxygen into the vacuum cavity at a speed of 2500sccm for 2h to complete one-time cleaning;
s5, placing the wafer after primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 3 pa;
s6, introducing argon into the inert gas chamber at a speed of 2500sccm, and introducing oxygen into the active gas chamber at a speed of 2500 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage is 3000 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed is 0.4r/min, the cleaning time is 2h, and secondary cleaning is completed;
s9, etching the cleaned wafer, wherein the etching step is to use a resin system with a specific form; adopting a mold matched with the appearance of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly casting or compression molding the shape of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
Example four:
on the basis of the first embodiment, the circuit board production method of the first embodiment is further optimized:
a method of producing a circuit board comprising the steps of:
s1, placing the surface of the wafer for the etched circuit board into an NMP solution for degumming;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 2 pa;
s3, introducing argon into the vacuum cavity at a speed of 5000sccm, and electrifying the graphite electrode at an electrifying voltage of 5000 v;
s4, introducing oxygen into the vacuum cavity at a speed of 5000sccm for 2h to complete one-time cleaning;
s5, placing the wafer subjected to primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 2 pa;
s6, introducing argon into the inert gas chamber at a speed of 5000sccm, and introducing oxygen into the active gas chamber at a speed of 5000 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage is 5000 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed is 0.2r/min, the cleaning time is 2h, and secondary cleaning is completed;
s9, etching the cleaned wafer, wherein the etching step is to use a resin system with a specific form; adopting a die matched with the shape of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly pouring or compression molding the appearance of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
The vacuum cavity is divided into an inert gas chamber and an active gas chamber by the isolation plate 4, the rotating frame and the isolation plate 4 are sealed by the flexible joint 5, a part to be cleaned is placed on the rotating frame 6, the cavity 2 of the main machine body 1 is firstly vacuumized by the vacuum pump group 3, and the cavity 2 is a vacuum cavity 2; the vacuum degree detector 10 detects the vacuum degree in the cavity 2, the graphite electrode 7 can be cleaned under different vacuum degrees according to different parts, the graphite electrode 7 is electrically connected with a high-voltage power supply 11, an alternating electric field is formed in the cavity 2, then inert gas and active gas are introduced into the cavity 2 through the inert gas box 8 and the active gas box 12, the electromagnetic valve 9 controls the ventilation speed of the inert gas and the active gas, the cavity 2 is isolated by the isolation plate 4, two sides of the isolation plate 4 are respectively in the inert gas atmosphere and the active gas atmosphere, the inert gas can be helium, neon, argon and the like in the inert gas atmosphere, the selection can be carried out according to production requirements, the graphite electrode emits a large amount of electrons under the action of the electric field to fly to a grounding anode and together with the argon in the vacuum, The oxygen collides to generate ionization to generate plasma, the plasma bombards and cleans residues on the surface of the circuit board, the plasma bombards and cleans the surface of the circuit board for pollutants strongly remained on the surface of the circuit board, the ion bombarding and cleaning is green and nondestructive, and the plasma volume is smaller than water molecules, so that the plasma can penetrate into the tiny holes of the circuit board and can complete cleaning inside the circuit board, and the cleaning effect is improved; in the active gas atmosphere, positive ions are accelerated to collide the graphite electrode to generate sputtering reaction, the graphite electrode and the active gas generate oxidation reaction, the sputtered substance reacts with oxygen and oxygen ions in vacuum to generate an oxygen compound and then bombards the surface of the circuit board, part of the oxygen is ionized by high voltage to generate ozone, the generated ozone and residues on the surface of the circuit board generate strong oxidation reaction, generating oxidation products on the surface of the circuit board, wherein the oxidation products are separated from the surface of the circuit board by the bombardment of the plasma, thereby achieving the purpose of auxiliary cleaning, the negative ions are accelerated to collide the circuit board to react with C, CC which is not oxidized, CO2 and CO generated by the reaction bombard the surface of the circuit board, all the substances exist in a gas or electronic form finally, so that no residue or little residue exists on the circuit board, and the aim of cleaning is fulfilled;
physically mixing a resin system, uniformly mixing, heating for semi-curing, semi-curing to a certain degree, keeping the molten state of the resin system, adding an ordered reinforcing material, hanging the reinforcing material in an orderly suspended manner in a free-standing die, coating a release agent on the contact surface of the free-standing die and the resin system, pouring the molten resin system into the free-standing die matched with the shape of a cleaned wafer and a wiring pattern on a circuit board, completely curing the mixture of the molten resin system solution and the reinforcing material in the free-standing die in a thermosetting manner, separating the completely cured resin system from the free-standing die at a heating temperature of 120-150 ℃, removing the release agent on the surface of the wafer, and enabling the shape of the resin system to conform to the shape required by the circuit board and the surface of the resin system to form the wiring pattern, a wiring pattern of a circuit board is formed by filling a conductive material on a wiring pattern directly molded by a free-standing mold.
The results of testing the surface dyne values and film oxidation rates of the circuit boards after cleaning in examples 1-4 are shown in table 1:
TABLE 1
Dyne value Film layer Oxidation Rate (%)
Example one 58 97.5
Example two 60 98.9
EXAMPLE III More than 60 99.9
Example four More than 60 99.9
The surface cleanliness dyne value of the circuit board treated by the cleaning method can reach 60, the film layer oxidation rate can reach 99.9%, and the effect of cleaning the surface of the circuit board is effectively improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (6)

1. A circuit board production method is characterized by comprising the following steps:
s1, roughly cleaning the surface of the wafer for etching the circuit board;
s2, placing the roughly cleaned wafer into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree range in the vacuum cavity is 5pa-2 pa;
s3, introducing inert gas into the vacuum cavity, introducing constant-temperature cooling water into the graphite electrode at a speed ranging from 10sccm to 5000sccm, rotating the cage provided with the substrate at a high speed, rotating the cylindrical target material at the same time, connecting the negative high voltage of a power supply to the graphite electrode by the magnetic field facing the substrate through the insulating electrode, electrifying the graphite electrode, wherein the electrifying voltage range is 200-5000 v;
s4, introducing active gas into the vacuum cavity, wherein the introduction speed of the active gas ranges from 10sccm to 5000sccm, the cleaning time is 0.5h to 2h, and one-time cleaning is completed;
s5, placing the wafer subjected to primary cleaning into a vacuum cavity, wherein an isolation plate is arranged in the vacuum cavity, the isolation plate divides the vacuum cavity into an inert gas chamber and an active gas chamber, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity ranges from 5pa to 2 pa;
s6, introducing inert gas into the inert gas chamber, wherein the inert gas introduction speed range is 10-5000sccm, and introducing active gas into the active gas chamber, wherein the active gas introduction speed range is 10-5000 sccm;
s7, respectively electrifying the graphite electrodes in the inert gas chamber and the active gas chamber, wherein the electrifying voltage range is 200-5000 v;
s8, rotating the wafer from the inert gas chamber to the active gas chamber, wherein the rotating speed range is 0.2-0.6r/min, the cleaning time is 1.5-2h, and the secondary cleaning is completed;
and S9, patterning and etching the surface of the cleaned wafer.
2. The method for producing a circuit board according to claim 1, wherein the rough cleaning of the wafer surface in the step S1 is to put the circuit board into an NMP solution for degumming to remove colloidal substances on the circuit board surface.
3. The method of claim 1, wherein a turret is disposed in the vacuum chamber in step S5, and the turret rotates the circuit board from the inert gas chamber to the active gas chamber.
4. The method of claim 1, wherein the inert gas in the steps S3 and S6 is any one of helium, neon, argon, krypton, xenon, and radon.
5. The method of claim 1, wherein the reactive gas in steps S4 and S6 is oxygen.
6. The method for producing a circuit board according to claim 1, wherein the etching step in the step S9 is to use a resin system with a specific form; adopting a mold matched with the appearance of the circuit board and the wiring pattern on the circuit board; placing the resin system in the mold; directly pouring or compression molding the appearance of the circuit board and the wiring pattern on the circuit board through the mold; and filling a conductive material on the wiring pattern to form a circuit board conductive pattern.
CN202110247599.9A 2021-03-06 2021-03-06 Circuit board production method Pending CN115020191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110247599.9A CN115020191A (en) 2021-03-06 2021-03-06 Circuit board production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110247599.9A CN115020191A (en) 2021-03-06 2021-03-06 Circuit board production method

Publications (1)

Publication Number Publication Date
CN115020191A true CN115020191A (en) 2022-09-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110247599.9A Pending CN115020191A (en) 2021-03-06 2021-03-06 Circuit board production method

Country Status (1)

Country Link
CN (1) CN115020191A (en)

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