CN115007522A - Surface cleaning oxidation method - Google Patents
Surface cleaning oxidation method Download PDFInfo
- Publication number
- CN115007522A CN115007522A CN202110247594.6A CN202110247594A CN115007522A CN 115007522 A CN115007522 A CN 115007522A CN 202110247594 A CN202110247594 A CN 202110247594A CN 115007522 A CN115007522 A CN 115007522A
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- Prior art keywords
- product
- cleaning
- processed
- vacuum cavity
- graphite electrode
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- 238000004140 cleaning Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 15
- 230000003647 oxidation Effects 0.000 title claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 21
- 239000010439 graphite Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 238000001035 drying Methods 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- 239000013077 target material Substances 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 8
- 230000003749 cleanliness Effects 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002736 metal compounds Chemical group 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Abstract
The invention relates to a surface cleaning oxidation method, which comprises the following steps: s1, roughly cleaning the surface of the product to be processed, and drying the roughly cleaned product to be processed; s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity; s3, introducing inert gas into the vacuum cavity, wherein the vacuum degree range in the vacuum cavity is 5pa-0.05pa, and the inert gas introduction speed range is 10-5000 sccm; s4, electrifying the graphite electrode, wherein the electrifying voltage range is 200-; s5, introducing active gas into the vacuum cavity, wherein the velocity range of the introduced active gas is 10-5000 sccm; according to the invention, the graphite electrode is used as a target source to ionize the inert gas and the active gas, so that the problem of surface deposition caused by cleaning the surface of a product to be treated by using a metal electrode as the target source is solved, and the surface dyne value of the product to be treated is effectively improved; inert gas and active gas are adopted to clean the surface of the product to be treated at the same time, so that the surface cleanliness of the product to be treated after cleaning can reach 99.9%.
Description
Technical Field
The invention relates to the technical field of products to be treated, in particular to a surface cleaning and oxidizing method.
Background
In the prior art, when the surface of a product to be treated is cleaned, a metal electrode is usually adopted, the metal electrode is oxidized in the atmosphere of introducing active gas, and is ionized under high voltage, so that the surface of the product to be treated is impacted, the surface cleanliness of the product to be treated is poor, and metal or metal compound residues often exist.
Disclosure of Invention
In view of the above, the present invention is directed to a surface cleaning and oxidizing method, so as to solve the problem that the surface cleanliness of the product to be treated is poor due to the fact that the metal electrode is usually used when the surface of the product to be treated is cleaned, the metal electrode is oxidized in an atmosphere of introducing active gas, and is ionized under high voltage to impact the surface of the product to be treated.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
1. a surface cleaning oxidation method comprises the following steps:
s1, roughly cleaning the surface of the product to be processed, and drying the roughly cleaned product to be processed;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity;
s3, introducing inert gas into the vacuum cavity, wherein the vacuum degree range in the vacuum cavity is 5pa-0.05pa, the inert gas introduction speed range is 10-5000sccm, introducing constant-temperature cooling water into the graphite electrode, rotating the cage provided with the substrate at a high speed, rotating the cylindrical target material at the same time, and connecting the negative high voltage of the power supply to the graphite electrode through the insulating electrode with the magnetic field facing the substrate;
s4, electrifying the graphite electrode, wherein the electrifying voltage range is 200-5000 v;
s5, introducing active gas into the vacuum cavity, wherein the introduction speed of the active gas is 10-5000sccm, positive ions collide with the graphite electrode to generate sputtering, the graphite electrode and the active gas generate oxidation reaction, oxygen compounds generated by the reaction of sputtering substances and the active gas collide with the base material, negative ions collide with the base material to react with C, CC which is not oxidized, and CO2 and CO generated by the reaction collide with the base material and then escape from the base material and are sucked away by a vacuum pump;
s6, taking out the product to be processed by using tweezers, and placing the product into a storage box.
Preferably, in step S2, the product to be processed is clamped and fixed by using a clamp in the vacuum chamber.
Preferably, the inert gas in step S3 is any one of helium, neon, argon, krypton, xenon, and radon gas.
Preferably, the active gas in step S5 is oxygen.
Compared with the prior art, the surface cleaning oxidation method has the following advantages:
1. the graphite electrode is used as a target source to ionize the inert gas and the active gas, so that the problem of surface deposition caused by cleaning the surface of a product to be treated by using the metal electrode as the target source is solved, and the surface dyne value of the product to be treated is effectively improved;
2. inert gas and active gas are adopted to clean the surface of the product to be treated at the same time, so that the surface cleanliness of the product to be treated after cleaning can reach 99.9%;
3. the cleaning agent is relatively cleanest for cleaning surfaces of glass, metal, plastic and UV, has the advantages of lowest temperature, most uniform ions, highest energy, highest density, optimal cleaning effect and minimum risk.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments of the present invention will be briefly described below. Wherein the showings are for the purpose of illustrating certain embodiments of the invention only and not for the purpose of limiting the invention to all embodiments thereof.
FIG. 1 is a flow chart of cleaning of the product to be treated according to the present invention;
FIG. 2 is a diagram showing the distribution of substances during the cleaning of the product to be treated according to the present invention;
FIG. 3 is a schematic view of a system for cleaning products to be treated according to the present invention;
fig. 4 is a schematic view of an ion distribution region in a cleaning system of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
The first embodiment is as follows:
a surface cleaning oxidation method comprises the following steps:
s1, roughly cleaning the product to be processed, and drying the roughly cleaned product to be processed;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 0.05 pa;
s3, introducing argon into the vacuum chamber, and introducing inert gas at a speed of 10 sccm;
s4, electrifying the graphite electrode, wherein the electrifying voltage is 1500 v;
s5, introducing oxygen into the vacuum cavity at a speed of 10 sccm;
and S6, taking out the product to be processed by using tweezers and placing the product into a storage box.
The second embodiment:
on the basis of the first embodiment, the surface cleaning oxidation method of the first embodiment is further optimized:
a surface cleaning oxidation method comprises the following steps:
s1, roughly cleaning the product to be treated, and drying the roughly cleaned product to be treated;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 0.5 pa;
s3, introducing argon into the vacuum cavity at a speed of 1000 sccm;
s4, electrifying the graphite electrode, wherein the electrifying voltage is 500 v;
s5, introducing oxygen into the vacuum cavity at a speed of 1000 sccm;
and S6, taking out the product to be processed by using tweezers and placing the product into a storage box.
Example three:
on the basis of the first embodiment, the surface cleaning oxidation method of the first embodiment is further optimized:
a surface cleaning oxidation method comprises the following steps:
s1, roughly cleaning the product to be processed, and drying the roughly cleaned product to be processed;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 1 pa;
s3, introducing argon into the vacuum cavity at a flow rate of 3500 sccm;
s4, electrifying the graphite electrode, wherein the electrifying voltage is 350 v;
s5, introducing oxygen into the vacuum cavity at a speed of 3500 sccm;
s6, taking out the product to be processed by using tweezers, and placing the product into a storage box.
Example four:
on the basis of the first embodiment, the surface cleaning oxidation method of the first embodiment is further optimized:
a surface cleaning oxidation method comprises the following steps:
s1, roughly cleaning the product to be processed, and drying the roughly cleaned product to be processed;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity, wherein the vacuum degree in the vacuum cavity is 1.5 pa;
s3, introducing argon into the vacuum cavity at a speed of 5000 sccm;
s4, electrifying the graphite electrode, wherein the electrifying voltage is 300 v;
s5, introducing oxygen into the vacuum cavity at a speed of 5000 sccm;
s6, taking out the product to be processed by using tweezers, and placing the product into a storage box.
In step S2, the two sides of the product to be processed are clamped so that the product to be processed faces the graphite electrode;
in step S3, the graphite electrode ionizes the inert gas under high pressure, the ionized inert gas ions collide with the surface of the product to be processed, and the impurities on the surface of the product to be processed are collided with the product to be processed, so as to realize preliminary physical and chemical cleaning;
in step S4, the graphite electrode emits a lot of electrons under the action of the electric field to fly to the grounded anode and collide with argon and oxygen in vacuum to generate ionization, because the migration speed of argon and oxygen ions is relatively slow compared with that of electrons, a high-density plasma region is formed between the surface of the cylindrical target and the anode, and because the substrate is in or near the anode plasma region, the positive ions are accelerated to collide with the graphite electrode to generate sputtering, the sputtered substances react with oxygen and oxygen ions in vacuum to generate oxygen compounds and then collide with the product to be treated to realize further physical and chemical cleaning, and the negative ions are accelerated to collide with the product to be treated and C, CC which is not oxidized to react, and the generated CO2 and CO collide with the product to be treated to realize further physical and chemical cleaning, because all the above substances exist in the form of gas or electrons finally, therefore, the product to be treated has no residue or little residue, thereby achieving the purpose of cleaning.
The results of testing the surface dyne values and film cleaning rates of the products to be treated after washing in examples 1 to 4 are shown in table 1:
TABLE 1
| Dyne value | Film cleaning ratio (%) | |
| Example one | 54 | 96.6 |
| Example two | 56 | 97.9 |
| EXAMPLE III | 60 | 98.9 |
| Example four | 60 | 99.9 |
The surface cleanliness dyne value of the product to be treated by the cleaning method of the embodiment can reach 68, the film layer cleaning rate can reach 99.9%, and the surface cleaning effect of the product to be treated is effectively improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.
Claims (4)
1. A surface cleaning oxidation method is characterized by comprising the following steps:
s1, roughly cleaning the surface of the product to be processed, and drying the roughly cleaned product to be processed;
s2, placing the product to be processed after rough cleaning into a vacuum cavity, and vacuumizing the vacuum cavity;
s3, introducing inert gas into the vacuum cavity, wherein the vacuum degree range in the vacuum cavity is 5pa-0.05pa, the inert gas introduction speed range is 10-5000sccm, introducing constant-temperature cooling water into the graphite electrode, rotating the cage provided with the substrate at high speed, rotating the cylindrical target material at the same time, facing the magnetic field to the substrate, and connecting the negative high voltage of the power supply to the graphite electrode through the insulating electrode;
s4, electrifying the graphite electrode, wherein the electrifying voltage range is 200-;
s5, introducing active gas into the vacuum cavity, wherein the velocity range of the introduced active gas is 10-5000sccm, positive ions collide with the graphite electrode to generate sputtering, the graphite electrode and the active gas generate oxidation reaction, oxygen compounds generated by the reaction of sputtering substances and the active gas collide with the base material, negative ions collide with the base material and C, CC which is not oxidized react, and CO2 and CO generated by the reaction collide with the base material and then escape from the base material and are sucked away by the vacuum pump;
s6, taking out the product to be processed by using tweezers, and placing the product into a storage box.
2. The method for cleaning and oxidizing a surface of a substrate according to claim 1, wherein the step S2 comprises clamping and fixing the product to be processed by using a clamp in the vacuum chamber.
3. The method of claim 1, wherein the inert gas in step S3 is any one of helium, neon, argon, krypton, xenon, and radon.
4. The method as claimed in claim 1, wherein the active gas in step S5 is oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110247594.6A CN115007522A (en) | 2021-03-06 | 2021-03-06 | Surface cleaning oxidation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110247594.6A CN115007522A (en) | 2021-03-06 | 2021-03-06 | Surface cleaning oxidation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115007522A true CN115007522A (en) | 2022-09-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110247594.6A Pending CN115007522A (en) | 2021-03-06 | 2021-03-06 | Surface cleaning oxidation method |
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| Country | Link |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652862A (en) * | 2002-05-08 | 2005-08-10 | 刘健安 | Hazardous waste treatment method and apparatus |
| US20100200393A1 (en) * | 2009-02-09 | 2010-08-12 | Robert Chow | Sputter deposition method and system for fabricating thin film capacitors with optically transparent smooth surface metal oxide standoff layer |
| CN105018896A (en) * | 2014-04-22 | 2015-11-04 | 常州二维碳素科技股份有限公司 | Graphene film as well as preparation method and application thereof |
| CN105220212A (en) * | 2015-11-05 | 2016-01-06 | 北京科技大学 | A kind of liquid phase plasma large-area metal material surface continous treatment process |
| CN110304944A (en) * | 2019-07-15 | 2019-10-08 | 浙江星星科技股份有限公司 | A kind of surface treatment method of 3D hot bending graphite jig |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
| CN111477537A (en) * | 2020-04-07 | 2020-07-31 | 北京烁科精微电子装备有限公司 | Wafer cleaning method and wafer cleaning equipment |
-
2021
- 2021-03-06 CN CN202110247594.6A patent/CN115007522A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652862A (en) * | 2002-05-08 | 2005-08-10 | 刘健安 | Hazardous waste treatment method and apparatus |
| US20100200393A1 (en) * | 2009-02-09 | 2010-08-12 | Robert Chow | Sputter deposition method and system for fabricating thin film capacitors with optically transparent smooth surface metal oxide standoff layer |
| CN105018896A (en) * | 2014-04-22 | 2015-11-04 | 常州二维碳素科技股份有限公司 | Graphene film as well as preparation method and application thereof |
| CN105220212A (en) * | 2015-11-05 | 2016-01-06 | 北京科技大学 | A kind of liquid phase plasma large-area metal material surface continous treatment process |
| CN110304944A (en) * | 2019-07-15 | 2019-10-08 | 浙江星星科技股份有限公司 | A kind of surface treatment method of 3D hot bending graphite jig |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
| CN111477537A (en) * | 2020-04-07 | 2020-07-31 | 北京烁科精微电子装备有限公司 | Wafer cleaning method and wafer cleaning equipment |
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