CN115000012A - Method for removing test aluminum block in wafer scribing groove - Google Patents
Method for removing test aluminum block in wafer scribing groove Download PDFInfo
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- CN115000012A CN115000012A CN202210696022.0A CN202210696022A CN115000012A CN 115000012 A CN115000012 A CN 115000012A CN 202210696022 A CN202210696022 A CN 202210696022A CN 115000012 A CN115000012 A CN 115000012A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to a method for removing a wafer scribing groove test aluminum block, which comprises the following steps: coating a layer of photoresist on the upper surface of the wafer, controlling the thickness of the coated photoresist to be 65-110 mu m, baking the coated photoresist after coating, controlling the baking temperature to be 110-130 ℃ and controlling the baking time to be 3-6 minutes; exposing the wafer, wherein the exposure energy is controlled to be 800-1200 mj; carrying out development corrosion treatment on the wafer, wherein the development corrosion time is controlled to be 8-12 minutes; carrying out aluminum corrosion on the wafer, wherein an aluminum corrosion solution is prepared from an aluminum corrosion stock solution and water according to a ratio of 4-6: 1, and the aluminum corrosion time is controlled to be 25-35 minutes; the wafer is subjected to photoresist removing treatment, the temperature of the photoresist removing treatment is controlled to be 55-65 ℃, and the time is controlled to be 80-100 minutes. By the method, the removal rate of the test aluminum blocks in the wafer scribing groove can reach 100 percent, and the method has fewer steps and is simple and convenient to operate.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a method for removing a test aluminum block in a wafer scribing groove.
Background
At present, in the wafer dicing process, because a part of the wafer dicing grooves are covered by the metallic aluminum material and the physical property of the surface layer metallic aluminum material shows high ductility, when the dicing process cannot be avoided, the metallic aluminum material can cause the phenomena of rolling, falling and the like in the cutting process, namely the so-called aluminum warpage, and the aluminum warpage which does not fall off completely remains in the circuit package, so that the risk of unknown PIND failure exists.
In order to avoid this risk, the existing technical means usually adopt the improvement of laser and blade process to improve the aluminum warpage phenomenon, these methods have little effect, the laser technology cannot avoid the slag phenomenon caused by the thermal influence of laser, and the improvement of blade process cannot cover all the scribing grooves (the aluminum material fills the whole scribing grooves), so there is a need for a method capable of processing the aluminum material in the scribing grooves before the wafer scribing.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method which has few steps and simple and convenient operation and can completely remove a test aluminum block in a wafer scribing groove.
According to the technical scheme provided by the invention, the method for removing the test aluminum blocks in the wafer scribing groove comprises the following steps:
s1, coating a layer of photoresist on the upper surface of the wafer through a glue spreader, controlling the thickness of the coated photoresist to be 65-110 mu m, baking the coated photoresist after coating the glue, controlling the baking temperature to be 110-130 ℃ and controlling the baking time to be 3-6 minutes;
s2, carrying out exposure treatment on the wafer processed in the step S1 by using photoetching equipment, wherein the exposure energy is controlled to be 800-1200 mj;
s3, carrying out development corrosion treatment on the wafer processed in the step S2 by using a developing solution, wherein the development corrosion time is controlled to be 8-12 minutes;
s4, carrying out aluminum corrosion on the wafer processed in the step S3 on developing equipment by adopting an aluminum corrosion solution, wherein the aluminum corrosion solution is prepared by aluminum corrosion stock solution and water according to a ratio of 4-6: 1, and the aluminum corrosion time is controlled to be 25-35 minutes;
and S5, carrying out photoresist removing treatment on the wafer processed in the step S4 by using photoresist removing liquid, wherein the photoresist removing treatment temperature is controlled to be 55-65 ℃, and the photoresist removing treatment time is controlled to be 80-100 minutes, so that the method for removing the wafer scribing groove test aluminum blocks is completed.
Preferably, in step S1, the photoresist is JSR-THB 151N.
Preferably, in step S3, KS5300 is used as the developer.
Preferably, in step S4, the aluminum etching stock solution is aluminum etching stock solution gear.
Preferably, in step S5, the degumming solution KS3509 is used as the degumming solution.
In the invention, the gluing in the step S1, the exposure in the step S2 and the development in the step S3 are carried out to cover a layer of photoresist on the surface of the wafer except for the scribing groove area for protection; step S4, the aluminum corrosion is to completely remove the test aluminum block in the scribing slot; step S5 photoresist removal is to remove the photoresist on the wafer surface. After the 5 steps, the aluminum test block in the scribing groove on the wafer can be completely removed without damaging the surface of the chip, and the wafer can be prevented from being warped by aluminum in the scribing process.
By the method, the removal rate of the test aluminum blocks in the wafer scribing groove can reach 100 percent, and the method has fewer steps and is simple and convenient to operate.
Detailed Description
The present invention is further illustrated by the following examples.
The photoresist used in the following examples was supplied by JSR corporation under the model number JSR-THB 151N.
The developer used in the following examples was supplied from shanghai feiki materials science and technology ltd, model number KS 5300.
The aluminum corrosion stock solution used in the following examples was supplied by Shanghai-Wei chemistry, Inc., model number GEIT, and in aluminum corrosion stock solution GEIT, H 3 PO 4 68.5-69.5 wt% of HNO 3 The proportion is 2.1-2.9 wt%; CH (CH) 3 9.6-10.3 wt% of COOH, 1.9-2.1 wt% of additives and the balance of water.
The degumming solution used in the following examples is provided by shanghai feiki materials science and technology ltd, and is of the model number KS3509, and the main components of the degumming solution KS3509 are an amine mixture, dimethyl pentasulfone and an additive.
The glue applicator used in step S1 of the following examples was supplied by core-sourced microelectronic device, Inc. under the model CTD-01.
The lithographic apparatus used in step S2 of the following example is supplied by SUSS, Germany, under model EXP-01.
The developing device used in step S3 of the following example was supplied by core source microelectronics corporation, model number CTD-01.
Example 1
A method for removing an 8-inch single-plate wafer scribing groove test aluminum block comprises the following steps:
s1, coating a layer of photoresist on the upper surface of the wafer through a glue spreader, controlling the thickness of the coated photoresist to be 65 mu m, baking the coated photoresist after coating the photoresist, controlling the baking temperature to be 110 ℃ and controlling the baking time to be 3 minutes;
s2, carrying out exposure treatment on the wafer processed in the step S1 by adopting a photoetching device, wherein the exposure energy is controlled at 800 mj;
s3, carrying out development corrosion treatment on the wafer processed in the step S2 on a developing device by adopting a developing solution, wherein the development corrosion time is controlled to be 8 minutes;
s4, carrying out aluminum corrosion on the wafer processed in the step S3 by using an aluminum corrosion solution, wherein the aluminum corrosion solution is prepared by aluminum corrosion stock solution and water according to a ratio of 4:1, and the aluminum corrosion time is controlled to be 35 minutes;
and S5, carrying out photoresist removing treatment on the wafer processed in the step S4 by using photoresist removing liquid, wherein the photoresist removing treatment temperature is controlled at 55 ℃, and the photoresist removing treatment time is controlled at 80 minutes, so that the method for removing the wafer scribing groove testing aluminum block is completed.
The removal rate of the test aluminum blocks in the wafer scribe line reached 100% by the method of example 1.
Example 2
A method for removing an 8-inch single-edition wafer scribing groove test aluminum block comprises the following steps:
s1, coating a layer of photoresist on the upper surface of the wafer, controlling the coating thickness to be 80 microns, baking after coating, controlling the baking temperature to be 130 ℃ and controlling the baking time to be 4 minutes;
s2, carrying out exposure processing on the wafer processed in the step S1 by using photoetching equipment, wherein the exposure energy is controlled to be 1000 mj;
s3, carrying out development corrosion treatment on the wafer processed in the step S2 on a developing device by adopting a developing solution, wherein the development corrosion time is controlled to be 10 minutes;
s4, carrying out aluminum corrosion on the wafer processed in the step S3 by using an aluminum corrosion solution, wherein the aluminum corrosion solution is prepared by mixing an aluminum corrosion stock solution and water according to a ratio of 5:1, and the aluminum corrosion time is controlled to be 30 minutes;
and S5, carrying out photoresist removing treatment on the wafer processed in the step S4 by using a photoresist removing liquid, wherein the photoresist removing treatment temperature is controlled at 60 ℃, and the photoresist removing treatment time is controlled at 90 minutes, so that the method for removing the wafer scribing groove and testing the aluminum block is completed.
The removal rate of the test aluminum blocks in the wafer scribing grooves reaches 100% by the method of example 2.
Example 3
A method for removing an 8-inch single-plate wafer scribing groove test aluminum block comprises the following steps:
s1, coating a layer of photoresist on the upper surface of the wafer, controlling the coating thickness at 110 μm, baking after coating, controlling the baking temperature at 120 ℃ and the baking time at 6 minutes;
s2, carrying out exposure processing on the wafer processed in the step S1 by using a photoetching device, wherein the exposure energy is controlled to be 1200 mj;
s3, carrying out development corrosion treatment on the wafer processed in the step S2 on a developing device by adopting a developing solution, wherein the development corrosion time is controlled to be 12 minutes;
s4, carrying out aluminum corrosion on the wafer processed in the step S3 by using an aluminum corrosion solution, wherein the aluminum corrosion solution is prepared by aluminum corrosion stock solution and water according to a ratio of 6:1, and the aluminum corrosion time is controlled to be 25 minutes;
and S5, carrying out photoresist removing treatment on the wafer processed in the step S4 by using a photoresist removing liquid, wherein the photoresist removing treatment temperature is controlled at 65 ℃, and the photoresist removing treatment time is controlled at 100 minutes, so that the method for removing the wafer scribing groove and testing the aluminum block is completed.
The removal rate of the test aluminum blocks in the wafer scribe line reached 100% by the method of example 3.
The above is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the claims, and the present invention can be implemented by using the concept of the present invention and by using photoresist, developing solution, aluminum etchant and stripper produced by other companies.
Claims (5)
1. A method for removing a test aluminum block in a wafer scribing groove is characterized by comprising the following steps:
s1, coating a layer of photoresist on the upper surface of the wafer through a glue spreader, controlling the thickness of the coated photoresist to be 65-110 mu m, baking the coated photoresist after coating the glue, controlling the baking temperature to be 110-130 ℃ and controlling the baking time to be 3-6 minutes;
s2, carrying out exposure treatment on the wafer processed in the step S1 by adopting photoetching equipment, wherein the exposure energy is controlled to be 800-1200 mj;
s3, carrying out development corrosion treatment on the wafer processed in the step S2 on a developing device by adopting a developing solution, wherein the development corrosion time is controlled to be 8-12 minutes;
s4, carrying out aluminum corrosion on the wafer processed in the step S3 by using an aluminum corrosion solution, wherein the aluminum corrosion solution is prepared from an aluminum corrosion stock solution and water according to a ratio of 4-6: 1, and the aluminum corrosion time is controlled to be 25-35 minutes;
and S5, carrying out photoresist removing treatment on the wafer processed in the step S4 by using photoresist removing liquid, wherein the photoresist removing treatment temperature is controlled to be 55-65 ℃, and the photoresist removing treatment time is controlled to be 80-100 minutes, so that the method for removing the wafer scribing groove test aluminum blocks is completed.
2. The method of claim 1, wherein the step of removing the test aluminum blocks in the wafer scribe line comprises: in step S1, the photoresist is JSR-THB 151N.
3. The method of claim 1, wherein the step of removing the test aluminum blocks in the wafer scribe line comprises: in step S3, KS5300 was used as the developer.
4. The method of claim 1, wherein the step of removing the test aluminum blocks in the wafer scribe line comprises: in step S4, the aluminum etching stock solution is aluminum etching stock solution gear.
5. The method of claim 1, wherein the step of removing the test aluminum blocks in the wafer scribe line comprises: in step S5, a degummed solution KS3509 is used as the degummed solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210696022.0A CN115000012A (en) | 2022-06-20 | 2022-06-20 | Method for removing test aluminum block in wafer scribing groove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210696022.0A CN115000012A (en) | 2022-06-20 | 2022-06-20 | Method for removing test aluminum block in wafer scribing groove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115000012A true CN115000012A (en) | 2022-09-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210696022.0A Pending CN115000012A (en) | 2022-06-20 | 2022-06-20 | Method for removing test aluminum block in wafer scribing groove |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115000012A (en) |
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2022
- 2022-06-20 CN CN202210696022.0A patent/CN115000012A/en active Pending
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