CN114957316B - 硅烷基膦化合物的制造方法和硅烷基膦化合物 - Google Patents

硅烷基膦化合物的制造方法和硅烷基膦化合物 Download PDF

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Publication number
CN114957316B
CN114957316B CN202210634428.6A CN202210634428A CN114957316B CN 114957316 B CN114957316 B CN 114957316B CN 202210634428 A CN202210634428 A CN 202210634428A CN 114957316 B CN114957316 B CN 114957316B
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CN114957316A (zh
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田久保洋介
田村健
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Nippon Chemical Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/062—Organo-phosphoranes without P-C bonds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
CN202210634428.6A 2016-09-29 2017-09-19 硅烷基膦化合物的制造方法和硅烷基膦化合物 Active CN114957316B (zh)

Applications Claiming Priority (4)

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JP2016191858 2016-09-29
JP2016-191858 2016-09-29
PCT/JP2017/033724 WO2018061869A1 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物
CN201780056268.9A CN109715643B (zh) 2016-09-29 2017-09-19 硅烷基膦化合物的制造方法和硅烷基膦化合物

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CN114957316A CN114957316A (zh) 2022-08-30
CN114957316B true CN114957316B (zh) 2025-02-07

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CN201780056268.9A Active CN109715643B (zh) 2016-09-29 2017-09-19 硅烷基膦化合物的制造方法和硅烷基膦化合物

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US (2) US10934316B2 (https=)
EP (1) EP3521296B1 (https=)
JP (2) JP6401426B2 (https=)
KR (1) KR102569148B1 (https=)
CN (2) CN114957316B (https=)
TW (1) TW201827446A (https=)
WO (1) WO2018061869A1 (https=)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
CN114957316B (zh) * 2016-09-29 2025-02-07 日本化学工业株式会社 硅烷基膦化合物的制造方法和硅烷基膦化合物
CN110312729B (zh) * 2017-03-03 2023-09-15 Sk化学株式会社 用于制备量子点的膦前体及由其制备的量子点
WO2018212597A1 (ko) 2017-05-18 2018-11-22 에스케이케미칼 주식회사 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점
WO2019188679A1 (ja) * 2018-03-27 2019-10-03 日本化学工業株式会社 ＩｎＰ量子ドットの製造方法
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 ＩｎＰ量子ドット前駆体の製造方法及びＩｎＰ系量子ドットの製造方法
CN113905980A (zh) * 2019-04-16 2022-01-07 日本化学工业株式会社 InP量子点前体的制造方法和InP系量子点的制造方法
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
WO2025129004A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci
WO2016080683A1 (ko) * 2014-11-18 2016-05-26 에스케이케미칼주식회사 트리스(트리알킬실릴)포스핀의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) * 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) * 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
CN114957316B (zh) * 2016-09-29 2025-02-07 日本化学工业株式会社 硅烷基膦化合物的制造方法和硅烷基膦化合物
KR102770560B1 (ko) * 2018-03-27 2025-02-19 니폰 가가쿠 고교 가부시키가이샤 실릴포스핀 화합물, 실릴포스핀 화합물의 제조 방법 및 InP 양자 도트의 제조 방법
CN113905980A (zh) * 2019-04-16 2022-01-07 日本化学工业株式会社 InP量子点前体的制造方法和InP系量子点的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci
WO2016080683A1 (ko) * 2014-11-18 2016-05-26 에스케이케미칼주식회사 트리스(트리알킬실릴)포스핀의 제조방법

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CA3036035A1 (en) 2018-04-05
JP6401426B2 (ja) 2018-10-10
US11512103B2 (en) 2022-11-29
CN114957316A (zh) 2022-08-30
TW201827446A (zh) 2018-08-01
US10934316B2 (en) 2021-03-02
US20210171551A1 (en) 2021-06-10
CN109715643A (zh) 2019-05-03
EP3521296A1 (en) 2019-08-07
WO2018061869A1 (ja) 2018-04-05
KR20190059268A (ko) 2019-05-30
JP2018197257A (ja) 2018-12-13
JP7077180B2 (ja) 2022-05-30
US20190263845A1 (en) 2019-08-29
KR102569148B1 (ko) 2023-08-23
EP3521296A4 (en) 2019-08-28
EP3521296B1 (en) 2020-10-28
CN109715643B (zh) 2022-06-28
JPWO2018061869A1 (ja) 2018-09-27

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