CN114930529B - 发光二极管（led）器件的扇出结构及照明系统 - Google Patents

发光二极管（led）器件的扇出结构及照明系统 Download PDF

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Publication number
CN114930529B
CN114930529B CN202080093660.2A CN202080093660A CN114930529B CN 114930529 B CN114930529 B CN 114930529B CN 202080093660 A CN202080093660 A CN 202080093660A CN 114930529 B CN114930529 B CN 114930529B
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lighting system
led lighting
substrate
back plate
silicon
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CN114930529A (zh
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T·Y·轩
A·维亚纳坦
S·班纳
R·J·邦内
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Lumileds LLC
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Lumileds LLC
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
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    • F21S41/153—Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
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Abstract

描述了LED照明系统和车辆头灯系统。一种LED照明系统，包括具有顶表面、底表面和侧表面的硅背板和围绕硅背板的侧表面的衬底，所述衬底具有顶表面、底表面和侧表面。第一重分布层设置在硅背板的顶表面和衬底的顶表面上。第二重分布层设置在硅背板的底表面和衬底的底表面上。至少一个通孔在第一重分布层和第二重分布层之间延伸穿过衬底，并且填充有金属材料。

Description

发光二极管(LED)器件的扇出结构及照明系统
相关申请的交叉引用
本申请要求2020年1月23日提交的第16/750809号美国非临时申请、2020年2月18日提交的第20157985.1号欧洲专利申请、2019年12月20日提交的第62/951601号美国临时申请和2019年11月19日提交的第62/937629号美国临时申请的权益，其内容通过引用在此并入本文。
背景技术
精密控制照明应用可能需要生产和制造小型可寻址发光二极管(LED)照明系统。这种系统的较小尺寸可能需要非常规的部件和制造工艺。
发明内容
描述了LED照明系统、车辆头灯系统和制造方法。LED照明系统包括具有顶表面、底表面和侧表面的硅背板和围绕硅背板的侧表面的衬底，衬底具有顶表面、底表面和侧表面。第一重分布层设置在硅背板的顶表面和衬底的顶表面上。第二重分布层设置在硅背板的底表面和衬底的底表面上。至少一个通孔在第一重分布层和第二重分布层之间延伸穿过衬底并且填充有金属材料。
附图说明
通过结合附图以示例的方式给出的以下描述，可以得到更详细的理解，其中：
图1A是示例LED阵列的顶视图；
图1B是示例LED照明系统的截面视图；
图1C是图1B的示例LED照明系统的顶视图；
图1D是图1B的示例LED照明系统的底视图；
图2是结合了图1B的LED照明系统的示例应用系统的截面视图；
图3是结合了图1B的LED照明系统的示例车辆头灯系统的图；
图4是另一示例车辆头灯系统的图；
图5是制造LED照明系统(诸如图1B的LED照明系统)的示例方法的流程图；
图6A、图6B、图6C、图6D、图6E、图6F、图6G、图6H、图6I和图6J是LED照明系统在制造方法的各个阶段的截面视图；以及
图7是表示图6E的LED照明系统的底表面的底视图。
具体实施方式
下文将参照所附附图更全面地描述不同光照明系统和/或发光二极管(“LED”)实施方案的示例。这些示例不相互排斥，并且在一个示例中发现的特征可以与在一个或多个其他示例中发现的特征组合，以实现附加的实施方案。因此，将理解，所附附图中所示的示例仅是出于说明的目的而提供的，并且它们不旨在以任何方式限制本公开。类似的数字始终指代类似的元件。
将理解，尽管术语第一、第二、第三等可以在本文中用于描述各种元件，但是这些元件不应该被这些术语限制。这些术语可以用于将一个元件与另一元件区分开来。例如，在不脱离本发明的范围的情况下，第一元件可以被称为第二元件，并且第二元件可以被称为第一元件。如本文中使用的，术语“和/或”可以包括一个或多个相关联列出项的任何和所有组合。
将理解，当诸如层、区域或衬底的元件被称为“在另一元件上”或“延伸到另一元件上”时，它可以直接在另一元件上或直接延伸到另一元件上，或者也可以存在中间元件。相反，当元件被称为“直接在另一元件上”或“直接延伸到另一元件上”时，可能没有中间元件的存在。还将理解，当一个元件被称为“连接”或“耦合”到另一元件时，它可以直接连接或耦合到另一元件和/或经由一个或多个中间元件而连接或耦合到另一元件。相反，当一个元件被称为“直接连接”或“直接耦合”到另一元件时，在该元件和该另一元件之间没有中间元件的存在。将理解，这些术语旨在涵盖除了附图中描绘的任何方位之外的元件的不同方位。
诸如“下面”、“上面”、“上方”、“下方”、“水平”或“垂直”的相对术语在本文中可以用于描述一个元件、层或区域与附图中所图示的另一元件、层或区域的关系。将理解，这些术语旨在涵盖除了附图中描述的方位之外的器件的不同方位。
另外，LED、LED阵列、电气部件和/或电子部件是否被容纳在一个、两个或更多个电子板上也可以取决于设计约束和/或应用。
半导体发光器件(LED)或光学功率发射器件(诸如发射紫外(UV)或红外(IR)光功率的器件)是当前可用的最有效的光源之一。这些器件(以下称为“LED”)可以包括发光二极管、谐振腔发光二极管、垂直腔激光二极管、边缘发射激光器等。例如，由于其紧凑的尺寸和较低的功率要求，LED可能是许多不同应用的有吸引力的候选。例如，它们可以用作手持式电池供电设备(诸如相机和手机)的光源(例如，闪光灯和相机闪光灯)。它们还可以用于例如汽车照明、抬头显示(HUD)照明、园艺照明、街道照明、视频手电筒(torch for video)、一般光照(例如，家庭、商店、办公室和工作室照明，剧院/舞台照明和建筑照明)、增强现实(AR)照明、虚拟现实(VR)照明、作为显示器的背光、以及IR光谱仪。单个LED可能提供不如白炽光源亮的光，并且因此，多结器件或LED阵列(诸如单片LED阵列、微型LED阵列等)可以用于期望或需要更高亮度的应用。
图1A是示例LED阵列102的顶视图。在图1A所图示的示例中，LED阵列102是发射器120的阵列。LED阵列可以用于任何应用，诸如需要精确控制LED阵列发射器的应用。LED阵列102中的发射器120可以是单独可寻址的或者可以是以组/子集可寻址的。
图1A中还示出了LED阵列102的3×3部分的分解视图。如3×3部分分解视图所示，LED阵列102可以包括发射器120，每个发射器具有宽度w1。在实施例中，宽度w1可以是大约100μm或更小(例如，40μm)。发射器120之间的通道122的宽度可以是w2。在实施例中，宽度w2可以是大约20μm或更小(例如，5μm)。通道122可以在相邻发射器之间提供气隙，或者可以包含其他材料。从一个发射器120的中心到相邻发射器120的中心的距离d1可以是大约120μm或更小(例如，45μm)。将理解，本文提供的宽度和距离仅仅是示例并且实际的宽度和/或尺寸可以变化。
将理解，尽管在图1A中示出了以对称矩阵布置的矩形发射器，但是任何形状和布置的发射器都可以应用于本文描述的实施例。例如，图1A的LED阵列102可以包括超过20000个处于任意适用布置(诸如200×100矩阵、对称矩阵、非对称矩阵等)的发射器。还将理解，多组发射器、矩阵和/或板可以以任何适用的形式被布置，以实现本文描述的实施例。
如上所述，LED阵列(诸如LED阵列102)可以包括多达20000个或更多的发射器。这种阵列可能具有90mm2或更大的表面积，并且可能需要相当大的功率来给它们供电，诸如60瓦或更大。像这样的LED阵列可以被称为微型LED阵列或简称为微型LED。微型LED可以包括设置在衬底上的单独的发射器的阵列，或者可以是划分成(形成发射器的)片段的单个硅晶片或管芯。后一种类型的微型LED可以被称为单片LED。
为了单独地驱动或控制阵列中的单独的LED，可以在LED阵列附近设置硅背板，并且该硅背板在操作期间可能变得非常热。因此，散热对于这种器件来说可能具有挑战性。尽管一些用于半导体器件的散热的解决方案是已知的，但是这些解决方案通常包括通过器件顶部来散热的结构。然而，由于光发射，LED阵列(诸如图1A的LED阵列102)可能不能够通过器件顶部来散热。
附加地，LED阵列(诸如LED阵列102)可以用于诸如车辆头灯系统的应用，其可以包括可以形成驱动器、控制器和其他电路的无源元件(诸如电阻器和电容器)。可能希望将至少一些无源元件与LED阵列进行封装。
本文所述的实施例可以提供低轮廓(profile)LED阵列封装，其可以容纳一个或多个无源元件，并且使得能够散发由硅背板和LED阵列产生的热量。
图1B是示例LED照明系统100的截面视图。在图1B所图示的示例中，LED照明系统100包括硅背板104。硅背板104具有顶表面101、底表面103和侧表面105。硅背板104的侧表面105被(由模制材料形成的)衬底106包围。衬底106具有顶表面107、底表面109和侧表面190。在硅背板104的底表面103和衬底106的底表面109上提供一个或多个金属层110或重分布层(RDL)(在图6E的替代实施例中示出)。RDL 117可以形成在硅背板104的顶表面101和衬底106的顶表面107的至少一部分上。在图1B中所图示的示例中，RDL 117包括介电材料116的两层116a和116b以及单个金属层112。一个或多个通孔108可以延伸穿过衬底106并且可以填充有金属材料。通孔因此可以在硅背板104、RDL 117和金属化/RDL 110之间形成连续的电连接。LED阵列(诸如图1A的LED阵列102)可以设置在硅背板104的顶表面101上，并且经由金属连接器阵列(图1B中未示出)与其电耦合。在实施例中，电子部件114可以设置在RDL117上，并且经由金属层112电耦合到LED照明系统100。
LED阵列102可以是微型LED，诸如上面参照图1A所描述的。LED阵列102可以具有深度d1。在实施例中，深度d1可以例如在5μm和250μm之间。
硅背板104可以包括与LED阵列102中的发射器进行单独可寻址连接的电路和连接器。在实施例中，硅背板可以是互补金属氧化物半导体(CMOS)集成电路，其在实施例中可以是专用集成电路(ASIC)。硅背板104可以具有深度d3。在实施例中，深度d3可以例如在100μm和1mm之间。
由硅背板104、衬底106、金属化/RDL 110、RDL 117和通孔108组成的结构可以具有深度d2。在实施例中，深度d2可以例如在100μm和1mm之间。由于硅背板104被集成到衬底中，并且LED阵列102被设置在硅背板104的顶部上，所以LED照明系统100相对于垂直堆叠一个或多个这些元件的系统可以具有较低的轮廓。
在图1B所图示的示例中，RDL 117包括介电材料116的两层116a和116b以及单个金属层112。介电材料116的两层中的第一层116a可以在衬底106的顶表面107上和硅背板104的顶表面101的至少一部分上。金属层112可以在介电材料116的第一层116a上被图案化，诸如通过镀铜和铜蚀刻。介电材料116的第二层116b可以在图案化的金属层112的顶部和介电材料116的第一层116a的暴露部分上。尽管在图1B中示出了由两层介电材料和单层金属组成的RDL，但是本领域普通技术人员将认识到，取决于设计约束，RDL 117可以包括更多或更少的介电材料层和/或更多的金属层。介电材料116可以是任何合适的介电材料。在实施例中，介电材料可以是聚合物介电材料(诸如聚酰亚胺)。
RDL 117可以从硅背板104的周边区域朝向衬底106的侧表面190延伸。这既可以在中心区域中容纳(附接至硅背板104的顶表面101的)LED阵列102，又可以通过包含介电材料来帮助散热，该介电材料可以进一步将LED照明系统100与远离LED照明系统100的中心的最高热量区域的区域隔离。金属层112可以具有从介电材料116暴露的部分，以形成接合焊盘。金属层112可以包括在硅背板104的周边区域和接合焊盘之间延伸的部分，以在它们之间产生连续的电连接。接合焊盘可以电耦合到通孔108，以在LED照明系统100的顶表面和底表面之间产生连续的电连接。接合焊盘可以放置在衬底的周边区域中，或者与阵列间隔开但较靠近阵列(例如，如图1C所示)。
金属化/RDL 110可以以多种不同的方式形成。在图1B所图示的示例中，金属化/RDL 110是金属层，其包括在中心区域中电耦合和热耦合到硅背板104的底表面103的第一部分和从硅背板104的周边区域朝向衬底106的侧表面190扇出的第二部分。在实施例中，第一部分和第二部分可以彼此电绝缘。尽管在图1B中看不到，但是第二部分可以从硅背板104延伸，并且在接合焊盘处与单独的通孔108结合，从而将硅背板104电耦合到顶表面上的金属层112。金属层110的第一和第二部分两者都可以耦合到外部电路板(未示出)，诸如通过焊接。这可以实现LED照明系统100和外部电路板之间的直接连接，其提供了通过LED照明系统的底部的改进的散热。附加地，该结构可以实现硅背板104、LED阵列102、衬底106上的无源部件114、和外部电路板上的任何电子部件之间的通信。
在另一示例中(其稍后将参照图6E和图7被更详细地描述)，金属化/RDL 110可以是金属层和RDL的组合。如同图1B所图示的实施例，金属层可以在中心区域中电耦合和热耦合到硅背板104的底表面103。然而，该扇出可以使用RDL而非金属层来实现。在这种实施例中，LED照明器件100可以在顶表面和底表面上都具有RDL。
在这两种情况下，与常规硅器件封装相比，金属化/RDL 110可以是薄的结构，并且可以包括比常规硅器件封装少得多的介电材料。例如，图1B所示的实施例中的金属层100可以是单个金属层，并且RDL可以包括尽可能少的介电层。这可以提高这种封装中的散热效率，并且使得能够封装可能发射相当大的热量的微型LED和CMOS背板。
在图1B所图示的LED照明系统100中，硅背板104的顶表面101和衬底106的顶表面107是共面的。类似地，硅背板104的底表面103和衬底106的底表面109是共面的。该布置可以允许尽可能薄的封装并易于制造。然而，本领域的普通技术人员将认识到，因为衬底106是模制的，所以衬底106可以采取任何形状——诸如例如，其中衬底具有高于硅背板104的顶表面101的顶表面107——以进一步将电子部件114与LED照明系统100的高热量区域间隔开。因此，在实施例中，这些表面可能不是共面的。
图1C是示出了图1B的示例LED照明系统100的顶表面130的顶视图。在图1C所图示的示例中，LED照明系统的顶表面130包括RDL 117中的介电材料116的最顶层116b。电子部件114电耦合到RDL中的金属112，并且从介电材料116暴露。在实施例中，电子部件114可以不电耦合到金属112的所有区域，并且因此，在实施例中，顶表面130也可以包括从介电材料116暴露的金属112的一些区域。硅背板104的至少一部分的顶表面在图1C中示出，并且包括没有被LED阵列102或介电材料116覆盖的硅背板104的顶表面部分。LED阵列102的顶表面也示出为安装在硅背板104的顶表面上。
如图1C所示，LED照明系统100具有长度l1和宽度w1。在实施例中，长度l1可以是大约20mm，并且宽度w1可以是大约15mm。硅背板104可以具有长度l2和宽度w2。在实施例中，长度l2可以是大约15.5mm，并且宽度w2可以是大约6.5mm。LED阵列102可以具有长度l3和宽度w3。在实施例中，长度l3可以是大约11mm，并且宽度w3可以是大约4.4mm。
给定这些示例尺寸，可以提供具有相对大的表面积(在上述示例中为300mm2)的LED阵列封装，其中相对大数量的表面积没有被LED阵列占据(在上述示例中，LED阵列具有大约100mm2的表面积)。因此，该设计为LED阵列封装上的电子部件的附接提供了充足的空间。
图1D是示出了图1B的示例LED照明系统100的底表面140的底视图。在图1D所图示的示例中，底表面140包括从模制材料106暴露的衬底106的区域和金属110或与其耦合的焊盘的区域。在实施例中，衬底的一些区域可以被互连硅背板和接合焊盘的金属化和/或RDL的部分覆盖(尽管这些没有在图1D中示出)。在一些实施例中，互连金属区域和/或RDL可以被介电材料或其他封装或保护材料覆盖(图1D中未示出)。
图2是结合了图1B的LED照明系统100的应用系统200的截面视图。应用系统200可以包括电路板150，该电路板150具有多个接合焊盘152。在图2所图示的示例中，LED照明系统100的RDL/金属化110的暴露的金属区域/接合焊盘被直接接合到电路板150的接合焊盘152。如上所述，硅背板104的底表面上的金属层110和电路板150之间的直接接合实现了从LED照明系统100到电路板150的、用于散热目的的有效热传递，而不需要LED照明系统100的顶部(或其他地方)之上的附加散热结构(否则该附加散热结构可能例如阻挡来自LED阵列102的光发射)。电路板150可以是在特定应用——诸如车辆照明或闪光应用(示例车辆照明系统在下面参照图3和图4被描述)——中使用的较大系统的一部分。在这种系统中，应用中使用的一些无源部件可以是部件114，并且可以在附接至电路板150之前直接设置在LED照明系统100上。除了散热器之外，电路板150可以包括较大系统所需的其他电路元件。RDL117、RDL/金属化110和通孔108可以在部件114、硅背板104和电路板150之间提供连续的电连接。
图3是可以结合图1B的LED照明系统100的示例车辆头灯系统300的图。图3所图示的示例车辆头灯系统300包括电力线302、数据总线304、输入滤波器与保护模块306、总线收发器308、传感器模块310、LED直流到直流(DC/DC)模块312、逻辑低压差(LDO)模块314、微控制器316和主动式头灯318。在实施例中，主动式头灯318可以包括LED照明系统(诸如图1B的LED照明系统100)。如上所述，LED照明系统100在衬底的顶表面上提供了充足的空间和接合焊盘，使得图3所图示的一个、多个或所有模块可以被容纳在LED照明系统100的顶表面上。没有设置在LED照明系统100的顶表面上的模块可以设置在电路板150上(如图2所示)。在一些实施例中，车辆照明系统300中的一些或所有模块的一些电子部件可以被容纳在LED照明系统100的顶表面上，并且一些可以设置在电路板150上(如图2所示)。
电力线302可以具有从车辆接收电力的输入端，并且数据总线304可以具有输入端/输出端，通过这些输入端/输出端，可以在车辆和车辆头灯系统300之间交换数据。例如，车辆头灯系统300可以从车辆中的其他位置接收指令，诸如打开转向信号或打开头灯的指令，并且如果需要，可以向车辆中的其他位置发送反馈。传感器模块310可以通信地耦合到数据总线304，并且可以向车辆头灯系统300或车辆中的其他位置提供附加数据，该附加数据例如与环境条件(例如，一天中的时间、雨、雾、或环境光水平)、车辆状态(例如，停放、运动中、运动速度、或运动方向)、以及其他物体(例如，车辆或行人)的存在/位置相关。与(通信地耦合到车辆数据总线的)任何车辆控制器分离的头灯控制器也可以被包括在车辆头灯系统300中。在图3中，头灯控制器可以是微控制器，诸如微控制器(μc)316。微控制器316可以通信地耦合到数据总线304。
输入滤波器与保护模块306可以电耦合到电力线302，并且可以例如支持各种滤波器以减少传导发射并且提供电力抗扰性。此外，输入滤波器与保护模块306可以提供静电放电(ESD)保护、负载突降保护、交流发电机磁场衰减保护和/或反极性保护。
LED DC/DC模块312可以耦合在滤波器与保护模块306和主动式头灯318之间，以接收经滤波的电力，并且提供驱动电流来向主动式头灯318中的LED阵列中的LED供电。LEDDC/DC模块312可以具有7和18伏之间的输入电压，其中标称电压大约为13.2伏，并且输出电压可以略高于(例如，0.3伏)LED阵列的最大电压(例如，该最大电压由工厂或本地校准以及因负载、温度或其他因素而进行的操作条件调节而被确定)。
逻辑LDO模块314可以耦合到输入滤波器与保护模块306，以接收经滤波的电力。逻辑LDO模块314也可以耦合到微控制器314和主动式头灯318，以向微控制器314和/或主动式头灯318中的硅背板(例如，CMOS逻辑)提供电力。
总线收发器308可以具有例如通用异步收发器(UART)或串行外设接口(SPI)接口，并且可以耦合到微控制器316。微控制器316可以对基于或包括来自传感器模块310的数据的车辆输入进行转换。经转换的车辆输入可以包括视频信号，该视频信号可传递到主动式头灯模块318中的图像缓冲器。此外，微控制器316可以在启动期间加载默认图像帧和用于开路/短路的像素的测试。在实施例中，SPI接口可以在CMOS中加载图像缓冲器。图像帧可以是全帧、差分或部分帧。微控制器316的其他特征可以包括对CMOS状态以及逻辑LDO输出的控制接口监控，该CMOS状态包括管芯温度。在实施例中，可以动态控制LED DC/DC输出以最小化净空(headroom)。除了提供图像帧数据之外，其他头灯功能——诸如连同边灯(sidemarker)或转向信号灯的互补使用和/或日间行车灯的激活——也可以被控制。
图4是另一示例车辆头灯系统400的图。图4所图示的示例车辆头灯系统400包括应用平台402、两个LED照明系统406和408、以及光学器件410和412。两个LED照明系统406和408可以是LED照明系统(诸如图1B的LED照明系统100)，或者可以包括LED照明系统100加上图3的车辆头灯系统300中的其他模块中的所有或一些。在后一实施例中，LED照明系统406和408可以是车辆头灯子系统。
LED照明系统408可以发射光束414(在图4中的箭头414a和414b之间示出)。LED照明系统406可以发射光束416(在图4中的箭头416a和416b之间示出)。在图4所示的实施例中，次级光学器件410邻近LED照明系统408，并且从LED照明系统408发射的光穿过次级光学器件410。类似地，次级光学器件412邻近LED照明系统406，并且从LED照明系统412发射的光穿过次级光学器件406。在替代实施例中，在车辆头灯系统中没有设置次级光学器件410/412。
在包括次级光学器件410/412的场合，次级光学器件410/412可以是一个或多个光导或包括一个或多个光导。该一个或多个光导可以是边缘照明的，或者可以具有限定光导的内部边缘的内部开口。LED照明系统408和406(或者车辆头灯子系统的主动式头灯)可以被嵌入该一个或多个光导的内部开口中，使得它们将光注入该一个或多个光导的内部边缘(内部开口光导)或外部边缘(边缘照明光导)。在实施例中，该一个或多个光导可以以期望的方式(诸如例如，以梯度、倒角分布、窄分布、宽分布或角分布)对LED照明系统408和406所发射的光进行整形。
应用平台402可以经由线路404向LED照明系统406和/或408提供电力和/或数据，线路404可以包括图3的电力线302和数据总线304中的一个或多个或一部分。一个或多个传感器(其可以是系统300中的传感器或其他附加传感器)可以在应用平台402的外壳的内部或外部。替代地或附加地，如图3的示例LED照明系统300所示，每个LED照明系统408和406可以包括其自身的传感器模块、连接和控制模块、电源模块和/或LED阵列。
在实施例中，车辆头灯系统400可以表示具有可操控光束的汽车，其中LED可以被选择性地激活以提供可操控的光。例如，LED阵列(例如，LED阵列102)可以用于限定或投射形状或图案，或者仅照亮道路的选定部分。在示例实施例中，LED系统406和408内的红外相机或检测器像素可以是识别场景中需要光照的部分(例如，道路或人行横道)的传感器(例如，类似于图3的传感器模块310中的传感器)。
图5是制造LED照明系统(诸如图1B的LED照明系统100)的示例方法500的流程图。图6A、图6B、图6C、图6D、图6E、图6F、图6G、图6H、图6I和图6J是LED照明系统在制造方法的各个阶段的截面视图。在实施例中，方法500可以生产面板级封装的高密度LED照明系统。
在图5的示例方法500中，硅背板可以附接至第一载体(502)以形成第一结构。在实施例中，硅背板可以经由粘合材料(诸如胶带或临时粘合剂)附接至临时(例如，塑料)载体。第一结构的示例600A在图6A中图示，并且包括硅背板104、第一载体602和可选的粘合材料604。
附接至第一载体的硅背板可以被模制(504)以形成第二结构。第二结构的示例600B在图6B中图示，并且包括图6A的第一结构600A，其中模制材料围绕硅背板104的侧面。模制材料形成具有嵌入的硅背板104的衬底106。在实施例中，可以将模具放置在结构600A之上，其填充有模制材料并被固化。如果需要，可以从硅背板的顶表面移除任何多余的模制材料。在实施例中，模制可以是面板级模制，模制材料可以是聚合物材料，并且第二结构600B可以是具有临时衬底上的嵌入的硅背板的塑料衬底。
可以穿过衬底形成一个或多个通孔(506)，以形成第三结构。在实施例中，可以使用激光或钻孔来形成该一个或多个通孔。第三结构的示例600C在图6C中图示，并且包括嵌入衬底106中的硅背板104，其中两个通孔108穿过衬底106而形成。在该阶段，硅背板104和具有通孔108的衬底106可以保持附接至第一临时载体602。通孔108可以填充有金属材料。
可以在硅背板的一个表面和衬底上形成至少一个金属层(508)。这可以以多种不同的方式来完成。
在一些实施例中，可以在硅背板的一个表面和衬底上图案化或电镀金属层，以形成第四结构。图6D图示了第四结构的示例600D，其包括具有金属层110的第三结构。从图6D可以看出，金属层110在从硅背板104的周边区域延伸的通孔和区域之上形成接合焊盘。金属层也设置在硅背板104的一个表面的中心区域上。图1D所图示的LED照明系统100的底视图示出了这种示例。
在其他实施例中，金属层可以形成在中心区域中的硅背板的一个表面上，并且重分布层可以邻近单个金属层形成在硅背板的一个表面和衬底上，以形成第五结构。图6E图示了第五结构的示例600E，其包括具有单个金属层618和重分布层616的第三结构。在图6E所图示的示例中，重分布层616包括介电材料614的层和金属层612。尽管在图6E中示出了三个金属层，但是由于设计限制，如果需要，可以使用一个、两个或三个以上的金属层。例如，可以通过交替沉积介电材料的层、选择性移除部分介电材料(如果需要)、以及图案化顶部上的金属层来形成重分布层。从图6E中可以看出，金属层612开始于硅背板的一个表面的周边区域，并且朝向衬底的侧表面延伸。金属层612电耦合在硅背板104和通孔之间。金属层612的一部分从介电材料614暴露以形成焊盘，或者可以在最外部介电层的最外部表面上形成单独的焊盘。
图7是表示图6E的LED照明系统的底表面700的底视图。线702表示衬底的最外周。线104表示相对于衬底的最外周的、硅背板104所占据的区域的最外周。虚线704表示线704和硅背板104的最外周之间的区域的边界，该区域在本文中可被称为硅背板104的周边区域。重分布层616的金属层612可以开始于该周边区域，并且朝向衬底的侧表面(由线702描绘)延伸。在硅背板的周边区域的边界704和形成在硅背板的一个表面上的单个金属层618之间存在间隙。该间隙可以填充有介电材料，例如，如图6E所反映。
作为508的结果而形成的结构(例如，第四或第五结构)可以被翻转并附接至第二载体(510)以形成第六结构。在实施例中，该结构(例如，第四或第五结构)可以经由粘合材料(诸如胶带或临时粘合剂)附接至临时(例如，塑料)载体。该结构可以与邻近第二载体的至少一个金属层一起放置。第六结构的示例600G在图6G中图示，并且包括第二载体608和可选的粘合材料606。一旦该结构附接至第二载体，第一载体可以被移除(512)以形成第七结构。图6G中示出了第七结构的示例600G。
可以在通过移除第二载体而暴露的表面上形成重分布层和金属连接器阵列(514)，以形成第八结构。在实施例中，金属连接器阵列可以通过电镀或以其他方式图案化或在表面上形成铜柱凸块阵列来形成。第八结构的示例600H在图6H中图示，并且包括金属连接器640和重分布层117，重分布层117包括至少一个金属层112和介电材料116。如上文参照图6E所述，可以通过交替沉积介电材料的层、选择性移除部分介电材料(如果需要)、以及图案化顶部上的金属层来形成重分布层。在实施例中，超过20000个(例如，大约28000个)金属连接器可以形成在表面上。
LED阵列可以经由电连接器附接至硅背板(516)，以形成第九结构。在实施例中，这可以通过将硅背板与电连接器对准并施加热量以回流铜柱凸块中的焊料铜材料来执行。回流会在LED阵列下方产生底部填料(underfill)。在实施例中，LED阵列可以是单片LED阵列。第九结构的示例600I在图6I中图示，并且包括LED阵列102和底部填料。
LED阵列可以经历激光剥离(LLO)工艺和磷光体集成(518)。任何无源部件可以安装在重分布层117中暴露的金属区域上，以形成第十结构。第十结构的示例6J在图6J中图示，并且包括具有磷光体材料610的LED阵列102和无源部件114。
可选地，第十结构(其可以是LED照明系统，诸如图1B的LED照明系统100)可以安装在外部电路板上(520)，以便例如将LED照明系统100结合到车辆头灯或其他应用系统中。
已经详细描述了实施例，本领域技术人员将领会，给定本说明书，在不脱离本发明构思的精神的情况下，可以对本文描述的实施例进行修改。因此，意图是本发明的范围不局限于所图示的和描述的具体实施例。

Claims (19)

1.一种LED照明系统，包括：
具有顶表面、底表面和侧表面的硅背板；
所述硅背板的顶表面上的金属连接器阵列；
围绕所述硅背板的侧表面的衬底，所述衬底具有顶表面、底表面和侧表面；
所述硅背板的顶表面的一部分和所述衬底的顶表面上的第一重分布层；
所述硅背板的底表面和所述衬底的底表面上的第二重分布层；以及
至少一个通孔，在所述第一重分布层和所述第二重分布层之间延伸穿过所述衬底并且填充有金属材料。
2.根据权利要求1所述的LED照明系统，其中所述第一重分布层包括：
至少一个第一介电层，和
至少一个第一金属层，
所述至少一个第一金属层从所述硅背板的周边区域朝向所述衬底的侧表面延伸，并且具有从至少一个介电层暴露的至少一部分，以形成至少一个接合焊盘。
3.根据权利要求2所述的LED照明系统，进一步包括电耦合到所述至少一个接合焊盘的至少一个无源部件。
4.根据权利要求1所述的LED照明系统，其中所述第二重分布层包括：
至少一个第二介电层，以及
至少一个第二金属层，
所述至少一个第二金属层从所述硅背板的周边区域朝向所述衬底的侧表面延伸，并且具有从至少一个介电层暴露的至少一部分，以形成至少一个接合焊盘。
5.根据权利要求4所述的LED照明系统，进一步包括在中心区域电耦合和热耦合到所述硅背板的底表面的金属层，所述金属层与所述第二重分布层间隔开。
6.根据权利要求1所述的LED照明系统，其中所述金属连接器阵列是铜柱凸块阵列。
7.根据权利要求1所述的LED照明系统，进一步包括电耦合到所述金属连接器阵列的发光二极管阵列。
8.根据权利要求7所述的LED照明系统，其中所述发光二极管阵列是单片LED阵列。
9.根据权利要求8所述的LED照明系统，其中所述单片LED阵列包括多个发射器，所述多个发射器中的每一个具有100μm或更小的宽度。
10.根据权利要求9所述的LED照明系统，其中所述多个发射器布置成行和列，并且相邻行和列之间的通道具有20μm或更小的宽度。
11.根据权利要求1所述的LED照明系统，其中所述衬底包括模制材料。
12.根据权利要求1所述的LED照明系统，其中所述硅背板是互补金属氧化物半导体(CMOS)集成电路。
13.根据权利要求1所述的LED照明系统，其中所述硅背板是专用集成电路(ASIC)。
14.一种车辆头灯系统，包括：
至少一个传感器；
控制器，通信地耦合到所述至少一个传感器；
发光二极管驱动器；以及
主动式头灯，通信地耦合到所述控制器并且电耦合到所述发光二极管驱动器，所述主动式头灯包括：
具有顶表面、底表面和侧表面的硅背板，
围绕所述硅背板的侧表面的衬底，所述衬底具有顶表面、底表面和侧表面，
所述硅背板的顶表面和所述衬底的顶表面上的重分布层，所述重分布层包括至少一个介电层和至少一个金属层，所述至少一个金属层从所述硅背板的周边区域朝向所述衬底的侧表面延伸，并且具有从所述至少一个介电层暴露的至少一部分，以形成至少一个接合焊盘，
所述硅背板的顶表面上的LED阵列。
15.根据权利要求14所述的车辆头灯系统，其中所述至少一个传感器、所述控制器和所述发光二极管驱动器中的至少一个包括至少一个无源元件，并且所述至少一个无源元件电耦合到所述至少一个接合焊盘。
16.根据权利要求14所述的车辆头灯系统，其中：
所述主动式头灯进一步包括电耦合和热耦合到所述硅背板的底表面的金属层，并且所述车辆头灯系统进一步包括电耦合和热耦合到所述金属层的电路板。
17.根据权利要求16所述的车辆头灯系统，其中所述至少一个无源元件包括多个无源元件，并且所述多个无源元件中的至少一个在所述电路板上。
18.根据权利要求14所述的车辆头灯系统，其中所述LED阵列是包括多个发射器的单片LED阵列，所述多个发射器中的每一个具有100μm或更小的宽度。
19.根据权利要求18所述的车辆头灯系统，其中所述多个发射器布置成行和列，并且相邻行和列之间的通道具有20μm或更小的宽度。
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