TWI824197B - 製造ｌｅｄ照明系統之方法 - Google Patents

製造ｌｅｄ照明系統之方法 Download PDF

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TWI824197B
TWI824197B TW109140564A TW109140564A TWI824197B TW I824197 B TWI824197 B TW I824197B TW 109140564 A TW109140564 A TW 109140564A TW 109140564 A TW109140564 A TW 109140564A TW I824197 B TWI824197 B TW I824197B
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Taiwan
Prior art keywords
carrier
silicon backplane
metal layer
array
led
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TW109140564A
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TW202135278A (zh
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智蛘 邢
阿南特哈拉曼 瓦伊德亞納坦
史瑞尼 邦那
羅那度 喬翰尼斯 邦尼
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美商亮銳公司
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Priority claimed from US16/750,824 external-priority patent/US11631594B2/en
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Abstract

本發明描述製造一系統之方法。一種方法包含將一矽背板附接至一載體及模製該載體上之該矽背板使得一模製材料包圍該矽背板之側表面以形成包括具有一嵌入式矽背板之一基板之一結構。該結構具有與該載體相對之一第一表面、鄰近於該載體之一第二表面及側表面。至少一通孔穿過該模製材料而形成且填充一金屬材料。一金屬層經形成在該結構之該第一表面之一中心區域上。重佈層經形成在鄰近於該金屬層之該結構之該第一表面上。

Description

製造LED照明系統之方法
本發明係關於一種發光二極體裝置及照明系統，且更特定言之，本發明係關於一種具有一扇出結構之發光二極體裝置及照明系統。
精確度控制照明應用可需要產生及製造小可定址發光二極體(LED)照明系統。此等系統之較小尺寸可需要非習知組件及製造程序。
本發明描述LED照明系統、車輛前照燈系統及製造方法。一種LED照明系統包含具有一頂面、一底面及側表面之矽背板及包圍該矽背板之該等側表面之一基板，該基板具有一頂面、一底面及側表面。第一重佈層設置在該矽背板之該頂面及該基板之該頂面上。第二重佈層設置在該矽背板之該底面及該基板之該底面上。至少一通孔延伸穿過該等第一重佈層與該等第二重佈層之間之該基板且填充一金屬材料。
100:發光二極體(LED)照明系統
101:頂面
102:發光二極體(LED)陣列
103:底面
104:矽背板
105:側表面
106:基板
107:頂面
108:通孔
109:底面
110:金屬層/重佈層(RDL)
112:金屬層
114:電子組件
116:介電層
116a:層
116b:層
117:重佈層(RDL)
120:發射器
122:通道
130:頂面
140:底面
150:電路板
152:銲墊
190:側表面
200:應用系統
300:車輛前照燈系統
302:電力線
304:資料匯流排
306:輸入濾波器及保護模組
308:匯流排收發器
310:感測器模組
312:發光二極體(LED)直流電至直流電(DC/DC)模組
314:邏輯低壓差(LDO)模組
316:微控制器
318:主動前照燈
400:車輛前照燈系統
402:應用平台
404:線路
406:發光二極體(LED)照明系統
408:發光二極體(LED)照明系統
410:二次光學器件
412:光學器件
414:光束
414a:箭頭
414b:箭頭
416:光束
416a:箭頭
416b:箭頭
500:方法
502:將矽背板附接至第一載體
504:模製矽背板
506:形成穿過模製材料之通孔及填充金屬材料
508:在矽背板及模製材料之一表面上形成至少一金屬層
510:將模製矽背板附接至第二載體
512:移除第一載體
514:在矽背板及模製材料之曝露表面上形成重佈層且在矽背板之曝露表面上形成金屬連接器陣列
516:將LED陣列附接至矽背板、回熔及移除第二載體
518:對LED陣列之表面執行雷射剝離及磷光體整合且表面安裝任何被動組件
520:附接至外部電路板
600A:實例/第一結構
600B:實例/第二結構
600C:實例
600D:實例
600E:實例
600G:實例
600H:實例
600I:實例
600J:實例
602:第一載體
604:黏著材料
606:黏著材料
608:第二載體
610:磷光體材料
612:金屬層
614:介電材料
616:重佈層
618:金屬層
640:金屬連接器
700:底面
702:線路
704:虛線
d1:距離/深度
d2:深度
d3:深度
l1:長度
l2:長度
l3:長度
w1:寬度
w2:寬度
w3:寬度
可自結合附圖以實例之方式給出之以下描述獲得一更詳細理解，其中：圖1A係一實例性LED陣列之一俯視圖； 圖1B係一實例性LED照明系統之一橫截面圖；圖1C係圖1B之實例性LED照明系統之一俯視圖；圖1D係圖1B之實例性LED照明系統之一仰視圖；圖2係併入圖1B之LED照明系統之一實例性應用系統之一橫截面圖；圖3係併入圖1B之LED照明系統之一實例性車輛前照燈系統之一圖；圖4係車輛前照燈系統圖之另一個實例；圖5係製造一LED照明系統、諸如圖1B之LED照明系統之一實例性方法之一流程圖；圖6A、圖6B、圖6C、圖6D、圖6E、圖6F、圖6G、圖6H、圖6I及圖6J係製造方法中之不同階段之LED照明系統之橫截面圖；及圖7係表示圖6E之LED照明系統之底面之一仰視圖。
相關申請案之交叉參考
本申請案主張2020年1月23日申請之美國臨時申請案第16/750,824號、2020年2月19日申請之歐洲專利申請案第20158288.9號、2019年12月20日申請之美國臨時申請案第62/951,601號、2019年11月19日申請之美國臨時申請案第62/937,629號之權利，該等案之全部內容以引用之方式併入本文中。
下文將參考附圖更完全描述不同光照明系統及/或發光二極 體(「LED「)實施方案。此等實例不相互排斥且一實例中發現之特徵可與一或多個其他實例中發現之特徵組合以達成額外實施方案。因此，應理解附圖中所展示之實例僅用於說明且其等不意欲以任何方式限制本發明。通篇中相同元件符號係指相同元件。
應理解儘管術語第一、第二、第三等可用於描述各種元件，但此等元件不應受此等術語限制。此等術語可用於區分一元件與另一元件。例如，在不背離本發明之範疇之情況中，一第一元件可被稱為一第二元件且一第二元件可被稱為一第一元件。如本文所用，術語「及/或」可包含相關聯之所列項目之一或多者之任何及所有組合。
應理解當諸如一層、區域或基板之一元件指稱「位於」或「延伸至」另一元件上時，其可直接位於或直接延伸至另一元件上或亦可存在中間元件。相反，當一元件指稱「直接位於」或「直接延伸至」另一元件上時，可不存在中間元件。亦應理解當一元件指稱「連接」或「耦合」至另一元件時，其可直接連接或耦合至另一元件及/或經由一或多個中間元件連接或耦合至另一元件。相比而言，當一元件指稱「直接連接」或「直接耦合」至另一元件時，該元件與另一元件之間不存在中間元件。應理解除圖中所描繪之任何定向之外，此等術語意欲涵蓋元件之不同定向。
如圖中所繪示，相對術語(諸如「下方」、「上方」、「上」、「下」、「水平」或「垂直」)可在本文中用於描述一元件、層或區域與另一元件、層或區域之關係。應理解除圖中所描繪之定向之外，此等術語意欲涵蓋裝置之不同定向。
此外，LED、LED陣列、電組件及/或電子組件容置於一 個、兩個或更多個電子板上亦取決於設計約束及/或應用。
半導體發光裝置(LED)或光學功率發射裝置(諸如發射紫外(UV)或紅外(IR)光學功率之裝置)係當前可用之最有效光源。此等裝置(下文簡稱「LED」)亦可包含發光二極體、諧振腔發光二極體、垂直腔雷射二極體、邊緣發射雷射或其類似者。例如，歸因於其小型化尺寸及較低功率要求，LED可為許多不同應用之有吸引力之候選。例如，LED可用作為手持式電池供電裝置(諸如攝影機及手機)之光源(例如閃光燈及相機閃光燈)。例如，LED亦可用於汽車照明、抬頭顯示器(HUD)照明、園藝照明、街道照明、視訊手電筒、一般照明(例如家庭、商店、辦公室及工作室照明、劇烷/舞台照明及建築照明)、擴增實境(AR)照明、虛擬實境(VR)照明，作為顯示器之背光及紅外光譜法。一單一LED可提供不如一白熾燈光源亮之光且因此，多接面裝置或LED陣列(諸如單塊LED陣列、微LED陣列等)可用於期望或需要更高亮度之應用。
圖1A係一實例性LED陣列102之一俯視圖。在圖1A中所繪示之實例中，LED陣列102係一發射器120陣列。LED陣列可用於任何應用，諸如需要精確控制LED陣列發射器之應用。LED陣列102中之發射器120可單獨定址或可在群組/子集中定址。
圖1A中亦展示LED陣列102之一3×3部分之一分解圖。如3×3部分分解圖中所展示，LED陣列102可包含各具有一寬度w1之發射器120。在實施例中，寬度w1可為約100μm或更小(例如40μm)。發射器120之間之通道122可為一寬度w2寬。在實施例中，寬度w2可為約20μm或更小(例如5μm)。通道122可在相鄰發射器之間提供一氣隙或可含有其他材料。自一發射器120之中心至一相鄰發射器120之中心之一距離d1可為約 120μm或更小(例如45μm)。應理解本文所提供之寬度及距離僅係實例且實際寬度及/或尺寸可變動。
應理解儘管在圖1A中展示配置於一對稱矩陣中之矩形發射器，但任何形狀及配置之發射器可應用於本文所描述之實施例。例如，圖1A之LED陣列102可包含呈任何可適用配置之超過20,000個發射器，諸如200×100個矩陣、一對稱矩陣、一非對稱矩陣或其類似者。亦應理解多組發射器、矩陣及/或板可以任何可適用格式配置以實施本文所描述之實施例。
如上文所提及，LED陣列(諸如LED陣列102)可包含高達20,000個或更多個發射器。此等陣列可具有90mm2或更大之一表面積且可需要顯著電力對其供電，諸如60瓦或更大。諸如此之一LED陣列可指稱一微LED陣列或簡稱為一微LED。一微LED可包含設置在一基板上之一個別發射器陣列或可為分成形成發射器之若干片段之一單個矽晶圓或晶粒。後一類型之微LED可指稱一單塊LED。
為個別驅動或控制陣列中之個別LED，可在LED陣列附近提供矽背板且可在操作期間變得極熱。因此，熱消散對於此等裝置而言具有挑戰性。儘管已知用於半導體裝置之熱消散之一些解決方案，但此等解決方案通常包含透過裝置之頂部消散熱之結構。然而，歸因於光發射，LED陣列(諸如圖1A之LED陣列102)可不能夠透過裝置之頂部消散熱。
另外，LED陣列(諸如LED陣列102)可用於應用(諸如車輛前照燈系統)中，其可包含可形成驅動器、控制器及其它電路之被動元件，諸如電阻器及電容器。可期望將至少一些被動元件與LED陣列一起封裝。
本文所述之實施例可提供可容納一或多個被動元件且達成由矽背板及LED陣列產生之熱之消散之一低輪廓LED陣列封裝。
圖1B係一實例性LED照明系統100之一橫截面圖之一圖。在圖1B中所繪示之實例中，LED照明系統100包含矽背板104。矽背板104具有一頂面101、一底面103及側表面105。矽背板104之側表面105由由一模製材料形成之一基板106包圍。基板106具有一頂面107、一底面109及側表面190。一或多個金屬層110或重佈層(RDL)(展示於圖6E中之替代實施例中)設置在矽背板104之底面103及基板106之底面109上。RDL 117可形成於矽背板104之頂面101之至少一部分及基板106之一頂面107上。在圖1B中所繪示之實例中，RDL 117包含一介電材料116之兩個層116a及116b及一單一金屬層112。一或多個通孔108可延伸穿過基板106且可填充一金屬材料。因此，通孔可在矽背板104、RDL 117與金屬化/RDL 110之間形成一連續電連接。LED陣列(諸如圖1A之LED陣列102)可設置在矽背板104之頂面101上且經由一金屬連接器陣列(圖1B中未展示)電耦合至頂面。在實施例中，電子組件114可設置在RDL 117上且經由金屬層112電耦合至LED照明系統100。
LED陣列102可為一微LED，諸如上文相對於圖1A所描述。LED陣列102可具有一深度d1。在實施例中，深度d1可(例如)在5μm與250μm之間。
矽背板104可包含可與LED陣列102中之發射器個別可定址連接之電路及連接器。在實施例中，矽背板可為在實施例中可為一應用特定積體電路(ASIC)之一互補金屬氧化物半導體(CMOS)積體電路。矽背板104可具有一深度d3。在實施例中，深度d3可(例如)在100μm與1mm之 間。
由矽背板104、基板106、金屬化/RDL 110、RDL 117及通孔108組成之一結構可具有一深度d2。在實施例中，深度d2可(例如)在100μm與1mm之間。由於矽背板104整合至基板中且LED陣列102設置在矽背板104之頂部上，因此LED照明系統100可具有相對於垂直堆疊此等元件中之一或多者之系統之一較低輪廓。
在圖1B中所繪示之實例中，RDL 117包含介電材料116之兩個層116a及116b及一單一金屬層112。兩層介電材料116之第一層116a可位於基板106之頂面107及矽背板104之頂面101之至少一部分上。金屬層112可(諸如)藉由鍍銅及銅蝕刻在介電材料116之第一層116a上圖案化。介電材料116之第二層116b可位於圖案化金屬層112之頂部及介電材料116之第一層116a之曝露部分上。儘管由兩層介電材料及一單層金屬組成之RDL展示於圖1B中，但一般技術者應認識到RDL 117可取決於設計約束而包含更多或更少層之介電材料及/或更多金屬層。介電材料116可為任何合適合介電材料。在實施例中，介電材料可為一聚合物介電材料，諸如聚醯亞胺。
RDL 117可自矽背板104之一周邊區域朝向基板106之側表面190延伸。此可容納附接至一中心區域中之矽背板104之頂面101之LED陣列102及藉由含有可使LED照明系統100進一步絕緣至遠離LED照明系統100中心之最高熱區域之區域之介電材料而助於熱消散兩者。金屬層112可具有自介電材料116曝露以形成銲墊之部分。金屬層112可包含延伸於矽背板104之周邊區域及銲墊之間以在其間產生一連續電連接之部分。銲墊可電耦合至通孔108以在LED照明系統100之頂面與底面之間形成一 連續電連接。銲墊可放置於基板之周邊區域中或與陣列隔開但更靠近陣列(例如如圖1C中所展示)。
金屬化/RDL 110可以多種不同方式形成。在圖1B中所繪示之實例中，金屬化/RDL 110係包含在一中心區域中電及熱耦合至矽背板104之底面103之一第一部分及自矽背板104之周邊區域朝向基板106之側表面190扇出之第二部分之一金屬層。在實施例中，第一部分及第二部分可彼此電絕緣。儘管在圖1B中不可見，但第二部分可自矽背板104延伸且在銲墊處與個別通孔108連接以將矽背板104電耦合至頂面上之金屬層112。金屬層110之第一部分及第二部分兩者可(例如)藉由焊接而耦合一至外部電路板(圖中未展示)。此可達成LED照明系統100與外部電路板之間之一直接連接，其透過LED照明系統之底部提供改良散熱。另外，此結構可達成矽背板104、LED陣列102、基板106上之被動組件114與外部電路板上之任何電子組件之間之通信。
在稍後將相對於圖6E及圖7更詳細地描述之另一實例中，金屬化/RDL 110可為一金屬層及RDL之一組合。如同圖1B中所繪示之實施例，金屬層可電及熱耦合至一中心區域中之矽背板104之底面103。然而，扇出可使用RDL而非金屬層來完成。在此等實施例中，LED照明裝置100在頂面及底面兩者上均可具有RDL。
在兩種情況中，與習知矽裝置封裝相比，金屬化/RDL 110可為一薄結構且可包含比習知矽裝置封裝少得多之介電材料。例如，圖1B中所展示之實施例中之金屬層100可為一單一金屬層，且RDL可包含盡可能少之介電層。此可提高此等封裝中之熱消散效率且達成可發射大量熱之微LED及CMOS背板之封裝。
在圖1B中所繪示之LED照明系統100中，矽背板104之頂面101與基板106之頂面107共面。類似地，矽背板104之底面103與基板106之底面109共面。此配置可允許最薄可能封裝及易於製造。然而，一般技術者應認識到由於模製基板106，因此基板106可以呈任何形狀，諸如(例如)其中基板具有高於矽背板104之頂面101之一頂面107以使電子組件114進一步遠離LED照明系統100之高熱區域。因此，在實施例中，此等表面可不共面。
圖1C係展示圖1B之實例性LED照明系統100之一頂面130之一俯視圖。在圖1C中所繪示之實例中，LED照明系統之頂面130包含RDL 117中之介電材料116之最頂層116b。電子組件114電耦合至RDL中之金屬112且自介電材料116曝露。在實施例中，一電子組件114可不電耦合至金屬112之所有區域且因此，在實施例中，頂面130亦可包含自介電材料116曝露之金屬112之一些區域。矽背板104之至少一部分之一頂面展示於圖1C中且包含未由LED陣列102或介電材料116覆蓋之矽背板104之頂面之部分。LED陣列102之一頂面展示為安裝於矽背板104之頂面上。
如圖1C中所展示，LED照明系統100具有一長度l1及一寬度w1。在實施例中，長度l1可約為20mm且寬度w1可約為15mm。矽背板104可具有一長度l2及一寬度w2。在實施例中，長度l2可約為15.5mm且寬度w2可約為6.5mm。LED陣列102可具有一長度l3及一寬度w3。在實施例中，長度l3可約為11mm且寬度w3可約為4.4mm。
給定此等實例性尺寸，可提供具有一相對大表面積(在以上實例中係300mm2)之一LED陣列封裝，其中一相對大量之表面積未由LED陣列(在以上實例中其具有約100mm2之一表面積)佔據。因此，此設 計提供將電子組件附接於LED陣列封裝上之充足空間。
圖1D係展示圖1B之實例性LED照明系統100之一底面140之一仰視圖。在圖1D中所繪示之實例中，底面140包含基板106之區域及耦合至其之金屬110或自模製材料106曝露之焊墊之區域。在實施例中，基板之一些區域可由互連矽背板及銲墊之RDL之金屬化及/或部分覆蓋，儘管此等未展示於圖1D中。在一些實施例中，互連金屬區域及/或RDL可由一介電材料或其他囊封或保護材料覆蓋(圖1D中未展示)。
圖2係併入圖1B之LED照明系統100之一應用系統200之一橫截面圖。應用系統200可包含具有若干銲墊152之一電路板150。在圖2中所繪示之實例中，LED照明系統100之RDL/金屬化110之曝露金屬區域/銲墊直接接合至電路板150之銲墊152。如上文所提及，矽背板104之底面上之金屬層110與電路板150之間之直接結合達成自LED照明系統100至電路板150之有效傳熱用於散熱而不需要可(例如)否則阻擋來自LED陣列102之光發射之LED照明系統100之頂部上(或其它位置)之額外熱消散結構。電路板150可為用於特定應用中之一較大系統之部分，諸如車輛照明或閃光應用(下面相對於圖3及圖4圖描述實例性車輛照明系統)。在此等系統中，用於應用中之一些被動組件可為組件114且且可在附接至電路板150之前直接設置在LED照明系統100上。除一散熱器之外，電路板150可包含較大系統所需之其他電路元件。RDL 117、RDL/金屬化110及通孔108可在組件114、矽背板104與電路板150之間提供一連續電連接。
圖3係可併入圖1B之LED照明系統100之一實例性車輛前照燈系統300之一圖。圖3中所繪示之實例性車輛前照燈系統300包含電力線302、一資料匯流排304、一輸入濾波器及保護模組306、一匯流排收發器 308、一感測器模組310，一LED直流電至直流電(DC/DC)模組312、一邏輯低壓差(LDO)模組314、一微控制器316及一主動前照燈318。在實施例中，主動前照燈318可包含一LED照明系統，諸如圖1B之LED照明系統100。如上文所提及，LED照明系統100在基板之頂面上提供足夠空間及銲墊使得圖3中所繪示之一個、多個或所有模組可容納於LED照明系統100之頂面上。未設置在LED照明系統100之頂面上之模組可設置在電路板150上(如圖2中所展示)。在一些實施例中，車輛照明系統300中之一些或所有模組之一些電子組件可容納於LED照明系統100之頂面上且一些電子組件可設置在電路板150上(如圖2中所展示)。
電力線302可具有自一車輛接收電力之輸入且資料匯流排304可具有可經由其在車輛與車輛前照燈系統300之間交換資料之輸入/輸出。例如，車輛前照燈系統300可自車輛中之其他位置接收指令(諸如打開轉向信號或打開前照燈之指令)且可視需要發送回饋至車輛中之其他位置。感測器模組310可通信地耦合至資料匯流排304且可提供與(例如)環境條件(例如一天中之時間、雨、霧或環境光照位準)、車輛狀態(例如停車、運動中、運動速度或運動方向)及其他物件(例如車輛或行人)之存在/位置相關之額外資料至車輛前照燈系統300或車輛中之其他位置。與通信地耦合至車輛資料匯流排之任何車輛控制器分離之一前照燈控制器也可包含於車輛前照燈系統300中。在圖3中，前照燈控制器可為一微控制器，諸如微控制器(μc)316。微控制器316可通信地耦合至資料匯流排304。
輸入濾波器及保護模組306可電耦合至電力線302且可(例如)支援各種濾波器以減少傳導發射且提供功率抗擾度。此外，輸入濾波器及保護模組306可提供靜電放電(ESD)保護、負載卸載保護、交流發電 機場致衰變保護及/或反極性保護。
LED DC/DC模組312可耦合於濾波器及保護模組306及主動前照燈318之間以接收濾波功率且提供一驅動電流來為主動前照燈318中之LED陣列中之LED供電。LED DC/DC模組312可具有7伏與18伏之間之一輸入電壓及約13.2伏之一標稱電壓及可稍高於(例如0.3伏)LED陣列之一最大電壓之一輸出電壓(例如由歸因於負載、溫度或其他因數之因數或局部校準及操作條件調整判定)。
邏輯LDO模組314可耦合至輸入濾波器及保護模組306以接收濾波功率。邏輯LDO模組314亦可耦合至微控制器314及主動前照燈318以提供電力至微控制器314及/或主動前照燈318中之矽背板(例如CMOS邏輯)。
匯流排收發器308可(例如)具有一通用非同步收發器(UART)或串列週邊介面(SPI)介面且可耦合至微控制器316。微控制器316可基於或包含來自感測器模組310之資料而轉換車輛輸入。轉換車輛輸入可包含可轉換為主動前照燈模組318中之一影像緩衝器之一視訊信號。另外，微控制器316可在啟動期間載入預設影像圖框及測試開路/短路像素。在實施例中，一SPI介面可在CMOS中載入一影像緩衝器。影像圖框可為全框、差分圖框或部分圖框。微控制器316之其它特徵可包含CMOS狀態之控制介面監視，包含晶粒溫度以及邏輯LDO輸出。在實施例中，可動態控制LED DC/DC輸出以最小化容許度。除提供影像圖框資料外，亦可控制其他前照燈功能(諸如結合側標誌燈或轉向信號燈互補地使用)及/或啟動日間行車燈。
圖4係另一實例性車輛前照燈系統400之一圖。圖4中所繪 示之實例性車輛前照燈系統400包含一應用平台402、兩個LED照明系統406及408及光學器件410及412。兩個LED照明系統406及408可為LED照明系統，諸如圖1B之LED照明系統100或可包含LED照明系統100加上圖3之車輛前照燈系統300中所有其他模組之一些模組。在後一實施例中，LED照明系統406及408可為車輛前照燈子系統。
LED照明系統408可發射光束414(展示於圖4中之箭頭414a與414b之間)。LED照明系統406可發射光束416(展示於圖4中之箭頭416a與416b之間)。在圖4中所繪示之實施例中，一二次光學器件410鄰近於LED照明系統408且自LED照明系統408發射之光通過二次光學器件410。類似地，一二次光學器件412鄰近於LED照明系統412且自LED照明系統412發射之光通過二次光學器件412。在替代實施例中，車輛前照燈系統中不提供二次光學器件410/412。
在包含之情況中，二次光學器件410/412可為或包含一或多個光導。一或多個光導可為邊緣光或可具有界定光導之一內部邊緣之一內部開口。LED照明系統408及406(或車輛前照燈子系統之主動前照燈)可插入一或多個光導之內部開口中使得其等將光注入一或多個光導之內部邊緣(內部敞開光導)或外部邊緣(邊緣光光導)。在實施例中，一或多個光導可依一期望方式整形由LED照明系統408及406發射之光，諸如(例如)具有一梯度、一倒角分佈、一窄分佈、一寬分佈或一角分佈。
應用平台402可經由可包含圖3之電力線302及資料匯流排304之一或多者或一部分之線路404提供電力及/或資料至LED照明系統406及/或408。一個或多個感測器(其可為系統300中之感測器或其他額外感測器)可位於應用平台402之外殼內部或外部。替代地或另外，如圖3之 實例性LED照明系統300中所展示，各LED照明系統408及406可包含其自身之感測器模組、連接性及控制模組、電力模組及/或LED陣列。
在實施例中，車輛前照燈系統400可表示具有可操縱光束之一汽車，其中LED可選擇性地啟動以提供可操縱光。例如，一LED陣列(例如LED陣列102)可用於界定或保護一形狀或圖案或僅照明一道路之選定區段。在一實例性實施例中，LED系統406及408內之紅外攝影機或偵測器像素可為識別需要照明之一場景(例如道路或行人過街)之部分之感測器(例如類似於圖3之感測器模組310中之感測器)。
圖5係製造一LED照明系統(諸如圖1B之LED照明系統100)之一實例性方法500之一流程圖。圖6A、圖6B、圖6C、圖6D、圖6E、圖6F、圖6G、圖6H、圖6I及圖6J係製造方法中之不同階段之LED照明系統之橫截面圖。在實施例中，方法500可產生一面板級封裝之高密度LED照明系統。
在圖5之實例性方法500中，該矽背板可附接至一第一載體(502)以形成一第一結構。在實施例中，矽背板可經由一黏著材料(諸如一膠帶或臨時黏著劑)附接至一臨時(例如塑膠)載體。第一結構之一實例600A繪示於圖6A中且包含矽背板104、第一載體602及可選黏著材料604。
可模製(504)附接至該第一載體之該矽背板以形成一第二結構。第二結構之一實例600B繪示於圖6B中且包含圖6A之第一結構600A，其中模製材料包圍矽背板104之側。模製材料形成具有一嵌入式矽背板104之一基板106。在實施例中，一模具可放置於填充模製材料且固化之結構600A上。若需要，則可自矽背板之頂面移除任何過量模製材料。在 實施例中，模製可為面板級模製，模製材料可為一聚合物材料，且第二結構600B可為一臨時基板上之一嵌入式矽背板之一塑膠基板。
一或多個通孔可穿過該基板(506)形成以形成一第三結構。在實施例中，一或多個通孔可使用雷射或鑽頭形成。第三結構之一實例600C繪示於圖6C中且包含嵌入具有貫穿其間形成之兩個通孔108之基板106中之矽背板104。在此階段，具有通孔108之矽背板104及基板106可保持附接至第一臨時載體602。通孔108可填充一金屬材料。
至少一金屬層可形成於該矽背板及該基板之一表面上(508)。此可依若干不同方式完成。
在一些實施例中，一金屬層可在矽背板及基板之一表面上圖案化或電鍍以形成一第四結構。圖6D繪示第四結構之一實例600D，其包含具有金屬層110之第三結構。如可圖6D中可見，金屬層110在自矽背板104之一周邊區域延伸之通孔及區域上形成銲墊。一金屬層亦設置在矽背板104之一表面之一中心區域上。圖1D中所繪示之LED照明系統100之仰視圖展示此至一實例。
在其它實施例中，一金屬層可形成與一中心區域中之矽背板之一表面上，且重佈層可形成於矽背板之一表面與鄰近於該單一金屬層之基板之間以形成一第五結構。圖6E繪示第五結構之一實例600E，其包含具有單一金屬層618及重佈層616之第三結構。在圖6E中所繪示之實例中，重佈層616包含一介電材料614之若干層及金屬層612。儘管圖6E中展示三個金屬層，但歸因於設計約束，若需要，則可使用一個、兩個或三個以上金屬層。重佈層可(例如)藉由交替沈積介電材料之層、選擇性地移除介電材料之部分(若需要)及在頂部上圖案化一層金屬。如圖6E中可見，金 屬層612開始於矽背板之一表面之一周邊區域且朝向基板之側表面延伸。金屬層612電耦合於矽背板104與通孔之間。金屬層612之一部分自介電材料614曝露以形成一焊墊或單獨焊墊可形成於最外介電層之最外表面上。
圖7係表示圖6E之LED照明系統之一底面700之一仰視圖。線路702表示基板之最外周邊。線路104表示由相對於基板之最外周邊之矽背板104佔據之一區域之最外周邊。虛線704指定線路704與矽背板104之最外周邊之間的一區域之一邊界，其可指稱矽背板104之周邊區域。重佈層616之金屬層612可在周邊區域中開始且朝向基板之側表面延伸(由線路702劃界)。在矽背板之周邊區域之邊界704與形成於矽背板之一表面上之單一金屬層618之間存在一間隙。例如，如圖6E中所反映，可使用介電材料填充此間隙。
由於508而形成之該結構(例如第四或第五結構)可翻轉或附接至一第二載體(510)以形成一第六結構。在實施例中，結構(例如第四或第五結構)可經由一黏著材料(諸如一膠帶或臨時黏著劑)附接至一臨時(例如塑膠)載體。可放置該結構，其中至少一金屬層鄰近於第二載體之情況下。第六結構之一實例600G繪示於圖6G中且包含第二載體608及可選黏著材料606。一旦該結構附接至該第二載體，即可移除(512)該第一載體以形成一第七結構。圖6G中展示第七結構之一實例600G。
重佈層及一金屬連接器陣列可形成於藉由移除該第二載體(514)而曝露之該表面上以形成一第八結構。在實施例中，金屬連接器陣列可藉由電鍍或以其它方式圖案化或在表面上形成銅支柱凸塊陣列而形成。第八結構之一實例600H繪示於圖6H中且包括金屬連接器640及重佈層117，包含至少一金屬層112及介電材料116。如上文相對於圖6E所描 述，可藉由交替沈積介電材料、選擇性地移除介電材料之部分(若需要)及在頂部上圖案化一層金屬層而形成重佈層。在實施例中，超過20,000(例如約28,000)個金屬連接器可形成於該表面上。
一LED陣列可經由該等電連接器附接至該矽背板(516)以形成一第九結構。在實施例中，此可藉由使矽背板與電連接器對準且加熱以使銅支柱凸塊中之焊料銅材料回熔而執行。回熔可在LED陣列下形成一底膠。在實施例中，LED陣列可為一單塊LED陣列。第九結構之一實例600I繪示於圖6I中且包含LED陣列102及底膠。
該LED陣列可經歷一雷射剝離(LLO)程序及磷光體整合(518)。任何被動組件可安裝於重佈層117中之曝露金屬區域上以形成一第十結構。第十結構之一實例600J繪示於圖600J中且包含具有磷光體材料610及被動組件114之LED陣列102。
該第十結構(其可為一LED照明系統(諸如圖1B之LED照明系統100)可視情況安裝於一外部電路板上(520)以(例如)將LED照明系統100併入一車輛前照燈或其他應用系統中。
已詳細描述實施例，熟習技術者應認識到可在不背離本發明概念之精神之情況中對本文所描述之實施例進行修改。因此，不意欲使本發明之範疇受限於所繪示及描述之特定實施例。
100:發光二極體(LED)照明系統
101:頂面
102:發光二極體(LED)陣列
103:底面
104:矽背板
105:側表面
106:基板
107:頂面
108:通孔
109:底面
110:金屬層/重佈層(RDL)
112:金屬層
114:電子組件
116:介電層
116a:層
116b:層
117:重佈層(RDL)
190:側表面
d1:距離/深度
d2:深度
d3:深度

Claims (14)

  1. 一種製造一LED照明系統之方法，該方法包括：將一矽背板附接至一載體；模製該載體上之該矽背板使得一模製材料包圍該矽背板之側表面以形成包括具有一嵌入式矽背板之一基板的一結構，該結構具有與該載體相對之一第一表面、鄰近於該載體之一第二表面及側表面；形成穿過該模製材料之至少一通孔；使用一金屬材料填充該至少一通孔；在該結構之該第一表面之一中心區域上形成一金屬層；在鄰近於該金屬層之該結構之該第一表面上形成重佈層；移除該載體；及直接在藉由移除該載體而曝露之該矽背板之一表面上形成一銅支柱凸塊陣列。
  2. 如請求項1之方法，其中該形成該重佈層包括：在該結構之該第一表面上形成一第一層之一介電材料，圖案化該介電材料之該第一層上之一金屬層使得該金屬層之至少一部分保持與該至少一通孔接觸且該金屬層之至少另一部分保持與該矽背板接觸，在該介電材料之該第一層及該金屬層上形成該介電材料之一第二層，及移除覆蓋對應於銲墊位置之該第一金屬層之區域之該介電材料之該 第二層之部分。
  3. 如請求項2之方法，其進一步包括在移除該載體之前將另一載體附接至該等重佈層。
  4. 如請求項3之方法，其進一步包括在該結構之該第二表面上形成其他重佈層。
  5. 如請求項1之方法，其進一步包括：使一LED陣列與該銅支柱凸塊陣列對準；及施加熱以使該等銅支柱凸塊回熔。
  6. 如請求項5之方法，其進一步包括：對該LED陣列執行雷射剝離；及對該LED陣列執行磷光體整合。
  7. 如請求項5之方法，其中使該LED陣列與該銅支柱凸塊陣列對準包括使包括20,000或多於20,000個發射器之一LED陣列與包括每發射器至少一銅支柱凸塊之一銅支柱凸塊陣列對準。
  8. 一種製造一LED照明系統之方法，該方法包括：將一矽背板附接至一載體；模製該載體上之該矽背板使得一模製材料包圍該矽背板之側表面以 形成包括具有一嵌入式矽背板之一基板的一結構，該結構具有與該載體相對之一第一表面、鄰近於該載體之一第二表面及側表面；形成穿過該模製材料之至少一通孔；使用一金屬材料填充該至少一通孔；圖案化該結構之該第一表面上之一金屬層，該金屬層具有電及熱耦合至一中心區域中之該矽背板之該底面之一第一部分及延伸於該矽背板之一周邊區域與該至少一銲墊之間的第二部分；移除該載體；及直接在藉由移除該載體而曝露之該矽背板之一表面上形成一銅支柱凸塊陣列。
  9. 如請求項8之方法，其進一步包括在移除該載體之前將另一載體附接至該金屬層。
  10. 如請求項9之方法，其進一步包括在該結構之該第二表面上形成其他重佈層。
  11. 如請求項8之方法，其進一步包括：使一LED陣列與該銅支柱凸塊陣列對準；及施加熱以使該等銅支柱凸塊回熔。
  12. 如請求項11之方法，其進一步包括：對該LED陣列執行雷射剝離；及 對該LED陣列執行磷光體整合。
  13. 如請求項11之方法，其中使該LED陣列與該銅支柱凸塊陣列對準包括使包括20,000或多於20,000個發射器之一LED陣列與包括每發射器至少一銅支柱凸塊之一銅支柱凸塊陣列對準。
  14. 如請求項12之方法，其進一步包括將至少一電子組件附接至該矽背板之該表面上之該至少一重佈層及藉由移除該載體而曝露之該模製材料。
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