CN114921844A - System and method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG - Google Patents

System and method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG Download PDF

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Publication number
CN114921844A
CN114921844A CN202210434887.XA CN202210434887A CN114921844A CN 114921844 A CN114921844 A CN 114921844A CN 202210434887 A CN202210434887 A CN 202210434887A CN 114921844 A CN114921844 A CN 114921844A
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plate
fixing plate
single crystal
fixing
shouldering
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Chinese (zh)
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李小红
王忠保
闫龙
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Ningxia Zhongxin Wafer Semiconductor Technology Co ltd
Hangzhou Semiconductor Wafer Co Ltd
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Ningxia Zhongxin Wafer Semiconductor Technology Co ltd
Hangzhou Semiconductor Wafer Co Ltd
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Priority to CN202210434887.XA priority Critical patent/CN114921844A/en
Publication of CN114921844A publication Critical patent/CN114921844A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a system and a method for effectively inhibiting NG (nitrogen-doped growth) of 300mm heavily arsenic-doped MCZ (micro-crystalline silicon) single crystal shouldering, wherein a heat dissipation mechanism comprises a first fixing plate, a second fixing plate and a third fixing plate, the first fixing plate is provided with a crucible through an installation mechanism, and the top of the second fixing plate is symmetrically penetrated with a rotating groove in a left-right mode. The system and the method for effectively inhibiting the NG of the 300mm heavily arsenic-doped MCZ single crystal shouldering solve the problems that the service life of a crystal bar is reduced and a black heart circle and a black chip are formed due to the cavity defect of the head of the crystal bar caused by temperature fluctuation caused by inaccurate temperature control in the existing shouldering process under the matched use of a first fixing plate, a second fixing plate, a third fixing plate, an installation mechanism, a crucible, a rotating groove, a rotating shaft, a rotating arm, a cylinder, a first threaded rod, a positioning mechanism, a spring, a first connecting plate, a second connecting plate and a sealing plate.

Description

System and method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG
Technical Field
The invention relates to the technical field of monocrystalline silicon production, in particular to a system and a method for effectively inhibiting NG (nitrogen-doped) of 300mm heavily arsenic MCZ monocrystalline shouldering.
Background
The silicon single crystal has a forbidden band width of 1.11 eV. A crystal having a substantially complete lattice structure. Is a good semiconductor material. The purity in production basically reaches 99.9999 percent, even more than 99.9999999 percent. For the manufacture of semiconductor devices, solar cells, chips, etc. The polycrystalline silicon is pulled in a single crystal furnace. Is the purest substance that can be prepared by human beings. The solar cell can be made by doping trace IIIA group elements into monocrystalline silicon to form a P-type semiconductor, doping trace VA group elements to form an N-type semiconductor, and combining the N-type semiconductor and the P-type semiconductor to convert radiation energy into electric energy.
The production process of the monocrystalline silicon comprises the following steps: the invention provides a system and a method for effectively inhibiting the shouldering of 300mm heavily arsenic-doped MCZ single crystal, wherein the shouldering is realized by adjusting the heating power and the temperature effect output of a single crystal furnace after the process of the thin neck is finished, reducing the temperature and the pulling speed to control the shouldering quality, the speed and the shape, and the shouldering shape and the angle, which can influence the solid-liquid interface shape of the head of a crystal rod and the quality of the crystal rod, if the temperature is too fast reduced, the liquid surface is supercooled, the shape of the shoulder is changed into a square shape due to the fast amplification of the diameter, and the dislocation is easily generated and the single crystal is lost when the shoulder is serious, the cavity defect of the head of the crystal rod is caused by the temperature fluctuation caused by inaccurate temperature control in the existing shouldering process, the service life of the crystal rod is reduced, and a black heart circle and a black core sheet are further formed, to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a system and a method for effectively inhibiting the 300mm heavily arsenic-doped MCZ single crystal shouldering NG, and solves the problems that the service life of a crystal bar is reduced and further a black heart circle and a black chip are formed due to the cavity defect of the head of the crystal bar caused by temperature fluctuation caused by inaccurate temperature control in the existing shouldering process.
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides an effectively restrain 300mm and heavily mix system that arsenic MCZ single crystal put shoulder NG, includes box and base, it has the case lid to articulate on the box, the cavity has been seted up on the box, be provided with the heating rod in the cavity, the first through-hole that is linked together with the cavity is seted up to the surface of box, fixedly connected with inner bag in the cavity, the surface of inner bag runs through and sets up the second through-hole that is linked together with the cavity, be provided with heat dissipation mechanism on the inner bag.
The heat dissipation mechanism comprises a first fixing plate, a second fixing plate and a third fixing plate, the first fixing plate is provided with a crucible through an installation mechanism, the top of the second fixing plate is symmetrically provided with rotating grooves in a left-right penetrating manner, the inner parts of the two rotating grooves are rotatably connected with rotating arms through rotating shafts, an air cylinder is rotatably connected between the two rotating arms, the rotating arm is movably connected with the first fixing plate, the top of the second fixing plate is in threaded connection with a first threaded rod, a positioning mechanism is arranged on the top end of the first threaded rod, a spring is fixedly connected between the second fixing plate and the third fixing plate, the bottom of the third fixing plate is fixedly connected with a first connecting plate, the first connecting plate is fixedly connected with a second connecting plate, a sealing plate is fixedly connected to the second connecting plate, and the sealing plate is connected with the inner container in a sliding manner;
positioning mechanism includes the fixing base, the bottom of fixing base surface and the top threaded connection of first threaded rod, one side of fixing base is run through and is seted up the thread groove, symmetrical threaded connection has the second threaded rod on the thread groove, two the one end that the second threaded rod departed from is all rotated and is connected with the touch panel, the external fixed surface of second threaded rod is connected with the knob, swing joint between touch panel and the first fixed plate, be in the contact state between touch panel and the inner bag.
Preferably, the mounting mechanism comprises a mounting plate fixedly connected on top of the first fixing plate by a fixing screw.
Preferably, a movable hole is formed in the top of the second fixing plate in a penetrating mode, a connecting rod is fixedly connected to the top of the third fixing plate, and the connecting rod is located inside the spring.
Preferably, a movable hole is formed in the top of the second fixing plate in a penetrating mode, a connecting rod is fixedly connected to the top of the third fixing plate, and the connecting rod is located inside the spring.
Preferably, a movable hole is formed in the top of the second fixing plate in a penetrating mode, a connecting rod is fixedly connected to the top of the third fixing plate, and the connecting rod is located inside the spring.
Preferably, a movable hole is formed in the top of the second fixing plate in a penetrating mode, a connecting rod is fixedly connected to the top of the third fixing plate, and the connecting rod is located inside the spring.
Preferably, a movable hole is formed in the top of the second fixing plate in a penetrating mode, a connecting rod is fixedly connected to the top of the third fixing plate, and the connecting rod is located inside the spring.
Preferably, the interior of the movable groove is matched with the outer surface of the box body, the top of the shielding plate is fixedly connected with a magnetic strip, and the top plate is made of a ferrous material.
The invention also discloses a method for effectively inhibiting the 300mm heavily arsenic-doped MCZ single crystal shouldering NG system, which specifically comprises the following steps:
s1, mounting member: firstly, placing a fixed seat in an inner container, then, connecting the fixed seat and a second fixed plate together by using a first threaded rod in a threaded manner, then, respectively rotating two knobs, so that two drive the second threaded rod to rotate, thereby respectively attaching two touch plates to two sides of the inner wall of the inner container to realize fixation, then, placing a first fixed plate on the tops of two rotating arms, and clamping the touch plates in a sliding groove, and then, fixing a crucible on the first fixed plate by using a fixing screw;
s2, heating of single crystal: then, placing the single crystal in a crucible, covering a box cover, opening a heating rod to heat the single crystal, heating the single crystal for a period of time, and closing the heating rod;
s3, heat dissipation: finally, lift the shielding plate, utilize the magnetism strip to make the shielding plate fix on the roof, afterwards, open the cylinder, and then make the rotor arm use the pivot to rotate as the fulcrum, thereby the top and the bottom of rotor arm all move to the minimum separately, at the in-process of motion, first fixed plate can the downstream, thereby first fixed plate does not contact with the opening part of inner bag, and third fixed plate can the downstream, thereby it moves to drive the shrouding through first connecting plate and second connecting plate, thereby second through-hole and first through-hole and external intercommunication, thereby the heat of the airtight environment of cavity can be stabilized and dispels, it leads to the fact the temperature fluctuation because the temperature is held inaccurately to have solved current shoulder in-process, lead to the cavity type defect of crystal bar head, cause the crystal bar life-span to reduce, and then form the problem of black heart circle and black core piece.
Preferably, the heating rod in S2 and the cylinder in S3 are both electrically connected to an external power source, and the cylinder in S3 is controlled by an external control program.
Advantageous effects
The invention provides a system and a method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG. Compared with the prior art, the method has the following beneficial effects:
(1) the system and the method for effectively inhibiting the NG of the 300mm heavily arsenic-doped MCZ single crystal shouldering, the heat dissipation mechanism comprises a first fixing plate, a second fixing plate and a third fixing plate, the first fixing plate is provided with crucibles through an installation mechanism, rotation grooves are formed in the top of the second fixing plate in a bilaterally symmetrical penetrating mode, rotation arms are rotatably connected inside the two rotation grooves through a rotation shaft, an air cylinder is rotatably connected between the two rotation arms, the rotation arms are movably connected with the first fixing plate, the top of the second fixing plate is in threaded connection with a first threaded rod, a positioning mechanism is arranged on the top end of the first threaded rod, a spring is fixedly connected between the second fixing plate and the third fixing plate, a first connecting plate is fixedly connected to the bottom of the third fixing plate, a second connecting plate is fixedly connected to the first connecting plate, a sealing plate is fixedly connected to the second connecting plate, and the sealing plate is in sliding connection with the inner container; the positioning mechanism comprises a fixed seat, the bottom of the outer surface of the fixed seat is in threaded connection with the top end of a first threaded rod, a threaded groove is formed in one side of the fixed seat in a penetrating mode, second threaded rods are in threaded connection symmetrically on the threaded groove, one ends, away from each other, of the two second threaded rods are rotatably connected with touch plates, knobs are fixedly connected to the outer surfaces of the second threaded rods, the touch plates are movably connected with a first fixed plate, the touch plates are in contact with an inner container, and under the matched use of the first fixed plate, the second fixed plate, the third fixed plate, an installation mechanism, a crucible, a rotating groove, a rotating shaft, a rotating arm, a cylinder, the first threaded rod, a positioning mechanism, a spring, a first connecting plate, a second connecting plate and a sealing plate, the problem that the service life of a crystal bar is shortened due to temperature fluctuation caused by inaccurate temperature control in the existing shouldering process is solved, thereby forming black circles and black chips.
(2) This effectively restrain system and method that 300mm heavily adulterates arsenic MCZ single crystal and put on shoulder NG, the movable hole has been seted up through running through at the top of second fixed plate, the top fixedly connected with connecting rod of third fixed plate, the connecting rod is located the inside of spring, the surface of connecting rod and the inside looks adaptation of movable hole, the top fixedly connected with dog of connecting rod, through at the connecting rod, under the cooperation of dog and movable hole is used, when installing inner bag interior subassembly, avoid the spring to receive the action of gravity to be in the extension state, influence the subsequent result of use of spring.
(3) This effectively restrain system and method that 300mm heavily adulterates arsenic MCZ single crystal and put on shoulder NG, through all having seted up the spout in the both sides of first fixed plate, the top and the bottom of spout vallecular cavity all are the opening setting, the transverse groove has been seted up with the bottom of the first fixed plate of surface looks adaptation of conflict board to the inside of spout, the inside of transverse groove and the surface looks adaptation of rotor arm, use under the cooperation through spout and transverse groove, when first fixed plate up-and-down motion, be favorable to spacing first fixed plate, prevent that first fixed plate from squinting to the left and right sides.
(4) This effectively restrain system and method that 300mm heavily mixes arsenic MCZ single crystal and put on shoulder NG, surface difference fixedly connected with roof and bottom plate through at the box, the surface swing joint of box has the shielding plate, the movable groove has been run through and has been seted up at the top of shielding plate, the inside in movable groove and the surface looks adaptation of box, the top fixedly connected with magnetic strip of shielding plate, the roof is made by the iron material, through at the roof, the bottom plate, the shielding plate, under the cooperation use of movable groove and magnetic strip, utilize the shielding plate to carry out the shutoff to first through-hole when not using, avoid the dust to enter into in first through-hole and the second through-hole, and utilize magnetic strip and roof to inhale mutually and realize fixing the shielding plate, be favorable to the inside heat of inner bag to discharge.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a front view of the internal structure of the case of the present invention;
FIG. 3 is an enlarged view of a portion of the invention at A in FIG. 1;
FIG. 4 is an enlarged view of a portion of the invention at B in FIG. 2;
FIG. 5 is a partial cross-sectional view taken at C of FIG. 2 in accordance with the present invention;
FIG. 6 is a perspective view of a first retaining plate of the present invention;
FIG. 7 is a top view of the first retaining plate and crucible of the present invention;
FIG. 8 is a sectional view of the fixing base of the present invention;
FIG. 9 is a side view of the swivel arm of the present invention;
FIG. 10 is a process flow diagram of the present invention.
In the figure: 1-box body, 2-base, 3-box cover, 4-concave cavity, 5-heating rod, 6-first through hole, 7-heat dissipation mechanism, 701-first fixing plate, 702-second fixing plate, 703-third fixing plate, 704-installation mechanism, 7041-installation plate, 7042-fixing screw, 705-crucible, 706-rotation groove, 707-rotation shaft, 708-rotation arm, 709-cylinder, 710-first threaded rod, 711-positioning mechanism, 7111-fixing seat, 7112-threaded groove, 7113-second threaded rod, 7114-touch plate, 7115-knob, 712-spring, 713-first connecting plate, 714-second connecting plate, 715-sealing plate, 8-connecting rod, 9-stop block, 10-sliding groove, 11-transverse groove, 12-top plate, 13-bottom plate, 14-baffle plate, 15-movable groove, 16-magnetic strip, 17-inner container, 18-second through hole, 19-movable hole and 20-through groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-10, the present invention provides a technical solution: a system for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG comprises a box body 1 and a base 2, wherein a box cover 3 is hinged on the box body 1, a concave cavity 4 is formed in the box body 1, a heating rod 5 is arranged in the concave cavity 4, a first through hole 6 communicated with the concave cavity 4 is formed in the outer surface of the box body 1, an inner container 17 is fixedly connected in the concave cavity 4, the outer surface of the inner container 17 is attached to the concave cavity 4, a second through hole 18 communicated with the concave cavity 4 is formed in the outer surface of the inner container 17 in a penetrating mode, and a heat dissipation mechanism 7 is arranged on the inner container 17; the heat dissipation mechanism 7 includes a first fixing plate 701, the crucible sealing device comprises a second fixing plate 702 and a third fixing plate 703, wherein a crucible 705 is arranged on the first fixing plate 701 through an installing mechanism 704, rotating grooves 706 are symmetrically arranged in the top of the second fixing plate 702 in a penetrating mode, rotating arms 708 are rotatably connected inside the two rotating grooves 706 through rotating shafts 707, air cylinders 709 are rotatably connected between the two rotating arms 708, the rotating arms 708 are movably connected with the first fixing plate 701, a first threaded rod 710 is in threaded connection with the top of the second fixing plate 702, a positioning mechanism 711 is arranged at the top end of the first threaded rod 710, a spring 712 is fixedly connected between the second fixing plate 702 and the third fixing plate 703, a first connecting plate 713 is fixedly connected with the bottom of the third fixing plate 703, a second connecting plate 714 is fixedly connected with the first connecting plate 713, a sealing plate 715 is fixedly connected with the second connecting plate 714, and the sealing plate 715 is in sliding connection with the inner container 17; the positioning mechanism 711 comprises a fixed seat 7111, the bottom of the outer surface of the fixed seat 7111 is in threaded connection with the top end of a first threaded rod 710, a threaded groove 7112 penetrates through one side of the fixed seat 7111, a second threaded rod 7113 is symmetrically and threadedly connected to the threaded groove 7112, the separated ends of the two second threaded rods 7113 are rotatably connected with a collision plate 7114, the outer surface of the second threaded rod 7113 is fixedly connected with a knob 7115, the collision plate 7114 is movably connected with a first fixed plate 701, the collision plate 7114 is in a contact state with the liner 17, and by using the first fixed plate 701, the second fixed plate 702, the third fixed plate 703, the mounting mechanism 704, the crucible 705, the rotating groove 706, a rotating shaft 709, a rotating arm 708, the air cylinder, the first threaded rod 710, the positioning mechanism 711, the spring 712, the first connecting plate 713, the second connecting plate 714 and the sealing plate 715 in a matching manner, the problem of temperature fluctuation caused by inaccurate temperature control in the existing shoulder-placing process is solved, leading to the defect of hollow type at the head of the crystal bar, causing the service life of the crystal bar to be reduced, and further forming a black core circle and a black chip, the mounting mechanism 704 comprises a mounting plate 7041, the mounting plate 7041 is fixedly connected on the top of the first fixing plate 701 through a fixing screw 7042, a movable hole 19 is formed through the top of the second fixing plate 702, a connecting rod 8 is fixedly connected on the top of the third fixing plate 703, the connecting rod 8 is positioned inside the spring 712, when the internal components of the inner container 17 are mounted through the cooperation of the connecting rod 8, the stopper 9 and the movable hole 19, the spring 712 is prevented from being in an extension state under the action of gravity, the subsequent use effect of the spring 712 is influenced, the outer surface of the connecting rod 8 is matched with the inside of the movable hole 19, the stopper 9 is fixedly connected on the top end of the connecting rod 8, the second through hole 18 and the first through hole 6 are positioned on the same horizontal line, the two sides of the first fixing plate 701 are both provided with chutes 10, the top and the bottom of 10 slot cavities of spout all are the opening setting, the inside of spout 10 and conflict board 7114's surface looks adaptation, horizontal slot 11 has been seted up to the bottom of first fixed plate 701, the inside of horizontal slot 11 and the surface looks adaptation of rotor arm 708, use through the cooperation at spout 10 and horizontal slot 11, when first fixed plate 701 up-and-down motion, be favorable to spacing first fixed plate 701, prevent that first fixed plate 701 from squinting to the left and right sides, rotor arm 708's one side is run through and is seted up logical groove 20, the surface of box 1 is fixedly connected with roof 12 and bottom plate 13 respectively, the surface swing joint of box 1 has shielding plate 14, movable groove 15 has been run through at the top of shielding plate 14, the inside of movable groove 15 and the surface looks adaptation of box 1, the top fixedly connected with magnetic strip 16 of shielding plate 14, roof 12 is made by the iron material, through at roof 12, the outer surface of box 1, Under the cooperation of bottom plate 13, shielding plate 14, activity groove 15 and magnetic strip 16 was used, utilize shielding plate 14 to carry out the shutoff to first through-hole 6 when not using, avoid the dust to enter into first through-hole 6 and second through-hole 18, utilize magnetic strip 16 and roof 12 to inhale mutually in addition and realize fixing shielding plate 14, be favorable to the inside heat of inner bag 17 to discharge.
The invention also discloses a method for effectively inhibiting the 300mm heavily arsenic-doped MCZ single crystal shouldering NG system, which specifically comprises the following steps:
s1, mounting member: firstly, a fixed seat 7111 is placed in an inner container 17, then the fixed seat 7111 is connected with a second fixed plate 702 through a first threaded rod 710 in a threaded manner, then two knobs 7115 are respectively rotated to drive two second threaded rods 7113 to rotate, so that two touch plates 7114 are respectively attached to two sides of the inner wall of the inner container 17 to realize fixation, then the first fixed plate 701 is placed on the tops of two rotating arms 708, the touch plates 7114 are clamped in a sliding groove 10, and then a crucible 705 is fixed on the first fixed plate 701 through a fixing screw 7042;
s2, heating of single crystal: then, the single crystal is placed in the crucible 705, the box cover 3 is closed, the heating rod 5 is opened to heat the single crystal, the single crystal is heated for a period of time, and the heating rod 5 is closed;
s3, heat dissipation: finally, the shutter 14 is lifted up, the shutter 14 is fixed to the top plate 12 by the magnetic strip 16, and thereafter, the cylinder 709 is opened, and then the rotating arm 708 is rotated around the rotating shaft 707 as a pivot, so that the top and bottom of the rotating arm 708 each move to the lowest point, during the movement, the first fixing plate 701 moves downward, so that the first fixing plate 701 does not contact with the opening of the inner container 17, and the third fixing plate 703 moves downward, thereby moving the closing plate 715 through the first linkage plate 713 and the second linkage plate 714, thereby second through-hole 18 and first through-hole 6 and external intercommunication to the heat of the airtight environment of cavity 4 can be stably dispersed, has solved current shoulder in-process and has led to the fact the temperature fluctuation because the temperature is held inaccurately, leads to the cavity type defect of crystal bar head, causes the crystal bar life-span to reduce, and then forms the problem of black heart circle and black chip.
In the present invention, the heating rod 5 in S2 and the cylinder 709 in S3 are both electrically connected to an external power source, and the cylinder 709 in S3 is controlled by an external control program.
And those not described in detail in this specification are well within the skill of those in the art.
It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (10)

1. A system for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG comprises a box body (1) and a base (2), wherein a box cover (3) is hinged to the box body (1), a concave cavity (4) is formed in the box body (1), and a heating rod (5) is arranged in the concave cavity (4), and is characterized in that a first through hole (6) communicated with the concave cavity (4) is formed in the outer surface of the box body (1), an inner container (17) is fixedly connected in the concave cavity (4), a second through hole (18) communicated with the concave cavity (4) is formed in the outer surface of the inner container (17) in a penetrating mode, and a heat dissipation mechanism (7) is arranged on the inner container (17);
the heat dissipation mechanism (7) comprises a first fixing plate (701), a second fixing plate (702) and a third fixing plate (703), a crucible (705) is arranged on the first fixing plate (701) through an installation mechanism (704), rotating grooves (706) are symmetrically formed in the left and right of the top of the second fixing plate (702) in a penetrating mode, rotating arms (708) are rotatably connected inside the two rotating grooves (706) through rotating shafts (707), an air cylinder (709) is rotatably connected between the two rotating arms (708), the rotating arms (708) are movably connected with the first fixing plate (701), a first threaded rod (710) is in threaded connection with the top of the second fixing plate (702), a positioning mechanism (711) is arranged at the top end of the first threaded rod (710), and a spring (712) is fixedly connected between the second fixing plate (702) and the third fixing plate (703), the bottom of the third fixing plate (703) is fixedly connected with a first connecting plate (713), a second connecting plate (714) is fixedly connected to the first connecting plate (713), a sealing plate (715) is fixedly connected to the second connecting plate (714), and the sealing plate (715) is in sliding connection with the inner container (17);
positioning mechanism (711) are including fixing base (7111), the bottom of fixing base (7111) surface and the top end threaded connection of first threaded rod (710), threaded groove (7112) have been run through to one side of fixing base (7111), symmetrical threaded connection has second threaded rod (7113), two on threaded groove (7112) the one end that second threaded rod (7113) left from all rotates and is connected with and supports touch panel (7114), the outer fixed surface of second threaded rod (7113) is connected with knob (7115), swing joint between touch panel (7114) and first fixed plate (701), it is in the contact condition to support between touch panel (7114) and inner bag (17).
2. The system of claim 1, wherein the system is effective to suppress re-arsenic doping of 300mm MCZ single crystal shouldering NG, and comprises: the mounting mechanism (704) comprises a mounting plate (7041), the mounting plate (7041) being fixedly attached to the top of the first fixing plate (701) by a fixing screw (7042).
3. The system and the method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG as claimed in claim 1, wherein: the top of the second fixing plate (702) penetrates through the movable hole (19), the top of the third fixing plate (703) is fixedly connected with a connecting rod (8), and the connecting rod (8) is located inside the spring (712).
4. The system for effectively suppressing 300mm heavily arsenic-doped MCZ single-crystal shouldering NG as claimed in claim 3, wherein: the outer surface of the connecting rod (8) is matched with the inside of the movable hole (19), the top end of the connecting rod (8) is fixedly connected with a stop block (9), and the second through hole (18) and the first through hole (6) are located on the same horizontal line.
5. The system of claim 1, wherein the system is effective to suppress re-arsenic doping of 300mm MCZ single crystal shouldering NG, and comprises: spout (10) have all been seted up to the both sides of first fixed plate (701), the top and the bottom in spout (10) slot chamber all are the opening setting, the inside of spout (10) and the surface looks adaptation of conflict board (7114).
6. The system for effectively suppressing 300mm heavily arsenic-doped MCZ single-crystal shouldering NG as claimed in claim 1, wherein: a transverse groove (11) is formed in the bottom of the first fixing plate (701), the inner portion of the transverse groove (11) is matched with the outer surface of the rotating arm (708), and a through groove (20) penetrates through one side of the rotating arm (708).
7. The system of claim 1, wherein the system is effective to suppress re-arsenic doping of 300mm MCZ single crystal shouldering NG, and comprises: the outer surface of the box body (1) is fixedly connected with a top plate (12) and a bottom plate (13) respectively, the outer surface of the box body (1) is movably connected with a shielding plate (14), and a movable groove (15) is formed in the top of the shielding plate (14) in a penetrating mode.
8. The system of claim 7, wherein the system is effective to suppress 300mm heavily arsenic-doped MCZ single crystal shouldering NG, and is characterized in that: the inside of activity groove (15) and the surface looks adaptation of box (1), the top fixedly connected with magnetic stripe (16) of shielding plate (14), roof (12) are made by the iron material.
9. A method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG system is characterized by comprising the following steps: the method specifically comprises the following steps:
s1, mounting member: firstly, a fixed seat (7111) is placed in an inner container (17), then the fixed seat (7111) and a second fixed plate (702) are connected together in a threaded mode through a first threaded rod (710), then two knobs (7115) are rotated respectively, so that the second threaded rod (7113) is driven to rotate by the two screws, two touch plates (7114) are attached to two sides of the inner wall of the inner container (17) respectively to achieve fixation, then a first fixed plate (701) is placed on the tops of two rotating arms (708), the touch plates (7114) are clamped in a sliding chute (10), and then a crucible (705) is fixed on the first fixed plate (701) through a fixing screw (7042);
s2, heating of single crystal: then, placing the single crystal in a crucible (705), covering a box cover (3), starting a heating rod (5) to heat the single crystal, heating the single crystal for a period of time, and closing the heating rod (5);
s3, heat dissipation: finally, lifting the shielding plate (14), fixing the shielding plate (14) on the top plate (12) by using the magnetic strip (16), then starting the air cylinder (709), further rotating the rotating arm (708) by using the rotating shaft (707) as a fulcrum, so that the top and the bottom of the rotating arm (708) respectively move towards the lowest point, in the moving process, the first fixing plate (701) moves downwards, so that the first fixing plate (701) is not contacted with the opening of the liner (17), and the third fixing plate (703) moves downwards, so that the sealing plate (715) is driven to move by the first connecting plate (713) and the second connecting plate (714), so that the second through hole (18) and the first through hole (6) are communicated with the outside, thereby the heat of the closed environment of the cavity (4) is stably dissipated, and the problem of temperature fluctuation caused by inaccurate temperature control in the existing shoulder-putting process is solved, leading to the defect of cavity type at the head of the crystal bar, causing the reduction of the service life of the crystal bar and further forming a black core circle and a black chip.
10. The method of claim 9, wherein the system is configured to inhibit 300mm re-arsenic MCZ single crystal shouldering NG effectively, and further comprising: the heating rod (5) in the S2 and the air cylinder (709) in the S3 are both electrically connected with an external power supply, and the air cylinder (709) in the S3 is controlled by an external control program.
CN202210434887.XA 2022-04-24 2022-04-24 System and method for effectively inhibiting 300mm heavily arsenic-doped MCZ single crystal shouldering NG Pending CN114921844A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003002782A (en) * 2001-06-15 2003-01-08 Toshiba Ceramics Co Ltd Method and device for pulling silicon single crystal
CN112779601A (en) * 2020-12-23 2021-05-11 有研半导体材料有限公司 Growth method of heavily arsenic-doped extremely-low-resistance silicon single crystal
CN113564693A (en) * 2021-08-02 2021-10-29 宁夏中欣晶圆半导体科技有限公司 Production method of low-resistivity heavily arsenic-doped silicon single crystal
CN113638040A (en) * 2021-08-12 2021-11-12 宁夏中欣晶圆半导体科技有限公司 Production method of heavily arsenic-doped silicon single crystal capable of inhibiting resistivity from warping

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003002782A (en) * 2001-06-15 2003-01-08 Toshiba Ceramics Co Ltd Method and device for pulling silicon single crystal
CN112779601A (en) * 2020-12-23 2021-05-11 有研半导体材料有限公司 Growth method of heavily arsenic-doped extremely-low-resistance silicon single crystal
CN113564693A (en) * 2021-08-02 2021-10-29 宁夏中欣晶圆半导体科技有限公司 Production method of low-resistivity heavily arsenic-doped silicon single crystal
CN113638040A (en) * 2021-08-12 2021-11-12 宁夏中欣晶圆半导体科技有限公司 Production method of heavily arsenic-doped silicon single crystal capable of inhibiting resistivity from warping

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