CN218089893U

CN218089893U - Silicon carbide single crystal growth device with large size and low defect density

Info

Publication number: CN218089893U
Application number: CN202222160073.XU
Authority: CN
Inventors: 卜俊恩; 崔海; 谢莉华; 谭思佳; 谢姗
Original assignee: Anhui Yanling Technology Co ltd
Current assignee: Anhui Yanling Technology Co ltd
Priority date: 2022-08-17
Filing date: 2022-08-17
Publication date: 2022-12-20
Anticipated expiration: 2032-08-17

Abstract

The utility model discloses a carborundum single crystal growth device of jumbo size, low defect density, including setting up the heat preservation shell in the growth furnace, be provided with growth crucible, crucible cover and board type resistance heater in the heat preservation shell, the growth crucible passes through screw fixed mounting in the bottom of crucible cover, the top fixed mounting of crucible cover has the vertical axis, and the top fixed mounting of heat preservation shell has the cage. The utility model relates to a rationally, the practicality is good, can control growth crucible level and rotate, can make the growth temperature of carborundum single crystal more even in the growth crucible to can be according to the speed that carborundum single crystal grows, adjust the high position of growth crucible, can guarantee that the height of carborundum single crystal growing point in the growth crucible remains unchanged, and then be favorable to the suppression of carborundum single crystal growth defect, can make the carborundum single crystal of jumbo size, low defect density, improved the production quality of carborundum single crystal.

Description

Silicon carbide single crystal growth device with large size and low defect density

Technical Field

The utility model relates to a carborundum single crystal growth equipment technical field specifically is a carborundum single crystal growth device of jumbo size, low defect density.

Background

Silicon carbide is a third-generation semiconductor material, has the properties of wide forbidden band, high thermal conductivity, high electron saturation migration rate, high breakdown electric field and the like, is one of wide-forbidden-band semiconductor materials which are mature in the current crystal production technology and device manufacturing level and most widely applied as a typical representative of the third-generation semiconductor materials, and is an ideal semiconductor material in high-temperature, high-frequency, radiation-resistant and high-power application occasions. Therefore, the production of a large-size, low-defect-density silicon carbide single crystal is very important work. The physical vapor transport method (PVT) is the most widely applied method for growing silicon carbide single crystal in commercial use at present, a growth device for growing the silicon carbide single crystal by the PVT method generally adopts a medium-frequency induction heating mode, a growth crucible and a coil are coaxially arranged, when the coil is loaded with medium-frequency alternating current, the powder is heated by induction heating of the growth crucible and a heat conduction mode, the powder is in a sublimation atmosphere of high-temperature area, gas phase components rise to the seed crystal position of a low-temperature area under temperature gradient for crystal growth, and in the prior art, when the silicon carbide single crystal growth device is used for preparing the silicon carbide single crystal, the growth temperature is high, the involved chemical reaction is complex, the growth information cannot be observed in real time and cannot be obtained in time in the crystal growth process, and the growth period is long, so that the quality of the grown crystal is reduced and the waste of raw materials is easily caused.

Aiming at the problem, the Chinese patent publication No. CN114318515A discloses a PVT growth device of a large-size silicon carbide single crystal, which has the technical key points that: the device comprises a growth furnace, an X-ray in-situ imaging module and a control system, wherein the growth furnace comprises a furnace wall, a heat preservation felt, a plate-type resistance heater and a crucible from outside to inside, and the X-ray in-situ imaging module comprises an X-ray source and an X-ray imaging receiver which are respectively arranged at two opposite sides of the growth furnace in the radial direction of single crystal growth; the two sides of the furnace wall in the radial direction are provided with non-metal windows for transmitting X-rays, and the heat preservation felt, the plate-type resistance heater and the crucible are all made of non-metal materials; and the control system receives an imaging signal of the X-ray imaging receiver and controls the X-ray source and the plate-type resistance heater to work.

Above-mentioned scheme discovers in actual production, be not convenient for control carborundum single crystal growth crucible horizontal rotation, carborundum single crystal growth crucible is heated inhomogeneously, easily cause the growth temperature in the carborundum single crystal growth crucible inhomogeneous, also be not convenient for adjust the height of carborundum single crystal growth crucible as required, easily cause the height nonconformity of carborundum single crystal growing point, and then influence the production quality of carborundum single crystal, can not satisfy the user demand, for this reason, we propose a carborundum single crystal growth device of jumbo size, low defect density and be used for solving above-mentioned problem.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

The utility model provides a not enough to prior art, the utility model provides a jumbo size, low defect density's carborundum single crystal growth device, solved current carborundum single crystal growth device when using, be not convenient for control carborundum single crystal growth crucible horizontal rotation, carborundum single crystal growth crucible is heated inhomogeneously, it is inhomogeneous easily to cause the growth temperature in the carborundum single crystal growth crucible, also be not convenient for adjust the height of carborundum single crystal growth crucible as required, easily cause the height nonconformity of carborundum single crystal growing point, and then influence the problem of the production quality of carborundum single crystal.

(II) technical scheme

In order to achieve the above purpose, the utility model provides a following technical scheme: the utility model provides a jumbo size, low defect density's carborundum single crystal growth device, is provided with growth crucible, crucible lid and board type resistance heater including setting up the heat preservation shell in the growth furnace in, and growth crucible passes through screw fixed mounting in the bottom of crucible lid, the top fixed mounting of crucible lid has the vertical axis, and the top fixed mounting of heat preservation shell has the cage, has seted up perpendicular hole on the top inner wall of heat preservation shell, erects the hole and is linked together with the cage is inside, and the top of vertical axis runs through perpendicular hole, and the spout has been seted up on the top of vertical axis, and slidable mounting has the slide bar in the spout, and fixed mounting has the axle bed on the top inner wall of cage, and the top of slide bar extends to outside the spout and is connected with the bottom rotation of axle bed, is provided with promotion subassembly and drive assembly in the cage.

Preferably, the lifting assembly comprises a disc, two sliders and two electric push rods, the disc is fixedly sleeved on the vertical shaft and located in the isolation cover, the annular sliding groove is formed in the bottom of the disc, the two sliders are slidably mounted in the annular sliding groove and symmetrically arranged, the bottoms of the two sliders are extended out of the annular sliding groove, the two electric push rods are fixedly mounted at the top of the heat preservation shell, the two electric push rods are symmetrically arranged on two sides of the vertical shaft, and output shaft ends of the two electric push rods are fixedly connected with the bottoms of the corresponding sliders respectively.

Preferably, the driving assembly comprises a motor, a main gear and a pinion, the motor is fixedly mounted on the inner wall of the top of the isolation cover through a support, the main gear is fixedly mounted at the output shaft end of the motor, the pinion is fixedly sleeved on the sliding rod in a fixing mode, and the main gear is meshed with the pinion.

Preferably, the inner walls of the two sides of the sliding groove are provided with limiting grooves, the two sides of the sliding rod are fixedly provided with limiting rods, and the two limiting rods are respectively slidably mounted in the corresponding limiting grooves.

Preferably, a sealing ring is fixedly mounted on the inner wall of the vertical hole, and an inner ring of the sealing ring is in sliding sealing contact with the outer wall of the vertical shaft.

Preferably, the front side inner wall of the heat preservation shell is provided with a taking and placing opening, the front side outer wall of the heat preservation shell is fixedly provided with a sealing cover plate through screws, and the sealing cover plate is matched with the taking and placing opening.

(III) advantageous effects

The utility model provides a silicon carbide single crystal growth device with large size and low defect density. The method has the following beneficial effects:

according to the large-size low-defect-density silicon carbide single crystal growth device, the driving assembly formed by combining the motor, the main gear and the pinion is utilized, the growth crucible can be controlled to horizontally rotate, so that the growth temperature in the growth crucible is more uniform, the growth of silicon carbide single crystals is more facilitated, the lifting assembly formed by combining the disc, the two sliding blocks and the two electric push rods is utilized, the height position of the growth crucible can be adjusted according to the growth speed of the silicon carbide single crystals, the height of growth points of the silicon carbide single crystals in the growth crucible is kept unchanged, the inhibition of growth defects of the silicon carbide single crystals is facilitated, the large-size low-defect-density silicon carbide single crystals can be prepared, the production quality of the silicon carbide single crystals is improved, and the problems that when the conventional silicon carbide single crystal growth device is used, the horizontal rotation of the silicon carbide single crystal growth crucible is inconvenient to control, the growth temperature in the silicon carbide single crystal growth crucible is not uniform, the height of the silicon carbide single crystal growth crucible is inconvenient to adjust according to requirements, the height of the silicon carbide single crystal growth points are easily caused to be inconsistent, and the production quality of the silicon carbide single crystals is further influenced are solved.

Drawings

FIG. 1 is a schematic view of the three-dimensional structure of the present invention;

FIG. 2 is a schematic sectional view of the front view of the present invention;

fig. 3 is an enlarged schematic view of a portion a in fig. 2.

In the figure: 1. a heat preservation shell; 2. growing a crucible; 3. a crucible cover; 4. a plate-type resistive heater; 5. a vertical axis; 6. an isolation cover; 7. a vertical hole; 8. a chute; 9. a slide bar; 10. a shaft seat; 11. a disc; 12. an annular chute; 13. a slider; 14. an electric push rod; 15. a motor; 16. a main gear; 17. a pinion gear; 18. and sealing the cover plate.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, are not to be construed as limiting the present invention, and in addition, in the description of the present invention, "a plurality" means two or more unless otherwise specifically defined.

As shown in fig. 1-3, the utility model provides a technical solution: a large-size low-defect-density silicon carbide single crystal growth device comprises a heat-insulating shell 1 arranged in a growth furnace, a growth crucible 2, a crucible cover 3 and plate-type resistance heaters 4 are arranged in the heat-insulating shell 1, silicon carbide seed crystals are arranged at the bottom of the crucible cover 3, silicon carbide powder is placed in the growth crucible 2, the number of the plate-type resistance heaters 4 is three, the distribution arrangement of the silicon carbide seed crystals, the silicon carbide powder and the three plate-type resistance heaters 4 is disclosed and described in the patent document with the publication number of CN114318515A, so that the description is not repeated, the growth crucible 2 is fixedly arranged at the bottom of the crucible cover 3 through screws, a vertical shaft 5 is fixedly arranged at the top of the crucible cover 3, an isolation cover 6 is fixedly arranged at the top of the heat-insulating shell 1, a vertical hole 7 is formed on the inner wall of the top of the heat-insulating shell 1, the vertical hole 7 is communicated with the inside of the isolation cover 6, the top end of the vertical shaft 5 penetrates through the vertical hole 7, the top end of the vertical shaft 5 is provided with a sliding chute 8, a sliding rod 9 is slidably mounted in the sliding chute 8, an axle seat 10 is fixedly mounted on the inner wall of the top part of the isolation cover 6, the top end of the sliding rod 9 extends out of the sliding chute 8 and is rotatably connected with the bottom of the axle seat 10, a disc 11, two sliding blocks 13, two electric push rods 14, a motor 15, a main gear 16 and a pinion 17 are arranged in the isolation cover 6, the disc 11 is fixedly sleeved on the vertical shaft 5 and is positioned in the isolation cover 6, the bottom of the disc 11 is provided with an annular sliding chute 12, the two sliding blocks 13 are both slidably mounted in the annular sliding chute 12 and are symmetrically arranged, the bottoms of the two sliding blocks 13 extend out of the annular sliding chute 12, the two electric push rods 14 are both fixedly mounted on the top part of the heat preservation shell 1, the two electric push rods 14 are symmetrically arranged on both sides of the vertical shaft 5, and output shaft ends of the two electric push rods 14 are respectively and fixedly connected with the bottoms of the corresponding sliding blocks 13, the disc 11, the two sliding blocks 13 and the two electric push rods 14 are connected and matched to support the disc 11 and the vertical shaft 5, so that the growth crucible 2 and the crucible cover 3 can be stably supported at proper positions in the heat insulation shell 1, the two electric push rods 14 are utilized to control the disc 11 to ascend or descend, further, the height positions of the growth crucible 2 and the crucible cover 3 can be conveniently adjusted, the motor 15 is fixedly installed on the inner wall of the top of the isolation cover 6 through a support, the main gear 16 is fixedly installed at the output shaft end of the motor 15, the auxiliary gear 17 is fixedly sleeved on the sliding rod 9, the main gear 16 is meshed with the auxiliary gear 17, the motor 15 is used for driving the main gear 16 to rotate, and the main gear 16 and the auxiliary gear 17 are meshed for transmission to control the growth crucible 2 and the crucible cover 3 to horizontally rotate.

In this embodiment, all seted up the spacing groove on the both sides inner wall of spout 8, the equal fixed mounting in both sides of slide bar 9 has the gag lever post, and two gag lever posts are respectively slidable mounting at corresponding spacing inslot, utilize the sliding connection cooperation of gag lever post at the spacing inslot, can carry on spacingly to the lift stroke of vertical axis 5 to make the steady rotation of drive vertical axis 5 that slide bar 9 can be smooth and easy.

In this embodiment, a seal ring is fixedly installed on the inner wall of the vertical hole 7, the inner ring of the seal ring is in sliding sealing contact with the outer wall of the vertical shaft 5, and the seal ring can be used to seal the gap between the vertical shaft 5 and the vertical hole 7.

In this embodiment, the front side inner wall of the heat preservation shell 1 is provided with a taking and placing opening, the front side outer wall of the heat preservation shell 1 is provided with a sealing cover plate 18 through a screw fixed mounting, the sealing cover plate 18 is matched with the taking and placing opening, the taking and placing opening is arranged, the growth crucible 2 is conveniently arranged in the heat preservation shell 1, the growth crucible 2 is also taken out, and the sealing cover plate 18 is used for sealing and shielding the taking and placing opening.

In this embodiment, a controller is arranged on the growth furnace, a plurality of control buttons are arranged on the controller, the plate-type resistance heater 4, the two electric push rods 14, the motor 15 and the controller are electrically connected with an external power line through wires in sequence to form a loop, and the plurality of control buttons on the controller can respectively control the plate-type resistance heater 4 and the motor 15 to be turned on and off and can also control the two electric push rods 14 to be turned on, turned off and reset.

When the device is used, silicon carbide powder is put into the growth crucible 2, the growth crucible 2 is installed and fixed at the bottom of the crucible cover 3, then the plate-type resistance heater 4 is started, the growth crucible 2 is heated by heat generated by the plate-type resistance heater 4, and then the silicon carbide single crystal can be grown and prepared, so that in the process of growing the silicon carbide single crystal, the motor 15 is started to rotate, the motor 15 drives the main gear 16 to rotate, the slide bar 9 can be controlled to drive the vertical shaft 5, the disc 11, the crucible cover 3 and the growth crucible 2 to horizontally rotate by utilizing the meshing transmission of the main gear 16 and the pinion 17, the two slide blocks 13 slide in the annular chute 12, and further the growth crucible 2 can be controlled to be heated more uniformly, so that the growth temperature in the growth crucible 2 is more uniform, the growth of the silicon carbide single crystal is more favorably realized, according to the growth speed of the silicon carbide single crystal, the two electric push bars 14 are started to work, the disc 11, the vertical shaft 5, the crucible cover 3 and the growth crucible 2 are pushed to rise, further, the height position of the growth crucible 2 can be adjusted in detail, the height of the silicon carbide single crystal can be kept unchanged, and the defects in the existing single crystal growing crucible 2 can be favorably produced and the defect production technology of the existing technical specifications of the silicon carbide can be improved.

In conclusion, the large-size low-defect-density silicon carbide single crystal growth device can control the growth crucible 2 to horizontally rotate, can enable the growth temperature of the silicon carbide single crystal in the growth crucible 2 to be more uniform, can adjust the height position of the growth crucible 2 according to the growth speed of the silicon carbide single crystal, can ensure that the height of the growth point of the silicon carbide single crystal in the growth crucible 2 is kept unchanged, is favorable for inhibiting the growth defects of the silicon carbide single crystal, can prepare the large-size low-defect-density silicon carbide single crystal, and improves the production quality of the silicon carbide single crystal.

Claims

1. A silicon carbide single crystal growth device with large size and low defect density comprises a heat preservation shell (1) arranged in a growth furnace, wherein a growth crucible (2), a crucible cover (3) and a plate-type resistance heater (4) are arranged in the heat preservation shell (1), the growth crucible (2) is fixedly arranged at the bottom of the crucible cover (3) through screws, and the silicon carbide single crystal growth device is characterized in that: the utility model discloses a crucible cover, including crucible cover (3), heat preservation shell (1), fixed mounting has cage (6) at the top of crucible cover (3), erect hole (7) have been seted up on the top inner wall of heat preservation shell (1), erect hole (7) with cage (6) inside is linked together, the top of vertical axis (5) is run through erect hole (7), spout (8) have been seted up on the top of vertical axis (5), slidable mounting has slide bar (9) in spout (8), fixed mounting has axle bed (10) on the top inner wall of cage (6), the top of slide bar (9) extend to outside spout (8) and with the bottom of axle bed (10) is rotated and is connected, be provided with promotion subassembly and drive assembly in cage (6).

2. A large-size, low-defect-density single-crystal silicon carbide growing apparatus according to claim 1, wherein: the lifting component comprises a disc (11), two sliders (13) and two electric push rods (14), wherein the disc (11) is fixedly sleeved on the vertical shaft (5) and is positioned in the isolation cover (6), an annular sliding groove (12) is formed in the bottom of the disc (11), the two sliding blocks (13) are arranged in the annular sliding groove (12) in a sliding mode and are symmetrically arranged, the two sliding blocks (13) are arranged at the two ends of the two sliders (13) and extend to the outer portion of the annular sliding groove (12), the two electric push rods (14) are fixedly arranged at the top of the heat preservation shell (1), the two electric push rods (14) are symmetrically arranged at the two sides of the vertical shaft (5) and are fixedly connected with the output shaft ends of the two electric push rods (14) correspondingly and respectively at the bottom of the sliders (13).

3. A large-size, low-defect-density single-crystal silicon carbide growing apparatus according to claim 1, wherein: drive assembly includes motor (15), master gear (16) and pinion (17), motor (15) pass through support fixed mounting on the top inner wall of cage (6), master gear (16) fixed mounting is in the output shaft end of motor (15), pinion (17) fixed cover is established on slide bar (9), master gear (16) with pinion (17) mesh mutually.

4. A large-size, low-defect-density single-crystal silicon carbide growing apparatus according to claim 1, wherein: limiting grooves are formed in the inner walls of the two sides of the sliding groove (8), limiting rods are fixedly mounted on the two sides of the sliding rod (9), and the two limiting rods are slidably mounted in the corresponding limiting grooves respectively.

5. A large-size, low-defect-density single-crystal silicon carbide growing apparatus according to claim 1, wherein: and a sealing ring is fixedly arranged on the inner wall of the vertical hole (7), and the inner ring of the sealing ring is in sliding sealing contact with the outer wall of the vertical shaft (5).

6. A large-sized silicon carbide single crystal growth apparatus of low defect density according to claim 1, wherein: the heat-insulating shell is characterized in that a taking and placing opening is formed in the inner wall of the front side of the heat-insulating shell (1), a sealing cover plate (18) is fixedly mounted on the outer wall of the front side of the heat-insulating shell (1) through screws, and the sealing cover plate (18) is matched with the taking and placing opening.