CN108091710B - A kind of Intermediate Gray solar absorption semiconductor and preparation method thereof - Google Patents
A kind of Intermediate Gray solar absorption semiconductor and preparation method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 12
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 12
- 239000012467 final product Substances 0.000 claims abstract description 8
- 238000004321 preservation Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 15
- 238000009396 hybridization Methods 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 2
- 229910017911 MgIn Inorganic materials 0.000 abstract description 15
- 238000001228 spectrum Methods 0.000 abstract description 12
- 238000011161 development Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010792 warming Methods 0.000 abstract 1
- 230000009102 absorption Effects 0.000 description 21
- 239000000843 powder Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000004570 mortar (masonry) Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000005211 surface analysis Methods 0.000 description 3
- 150000003624 transition metals Chemical group 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000001392 ultraviolet--visible--near infrared spectroscopy Methods 0.000 description 1
- 238000000584 ultraviolet--visible--near infrared spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
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Abstract
The invention discloses a kind of Intermediate Gray solar absorption semiconductor and preparation method thereof, chemical general formula MgIn2‑xNixS4, 0 < x < 2, MgIn in formula2S4In atom in part obtains MgIn replaced Ni atom in ternary compound2‑xNixS4, then according to MgIn2‑ xNixS4Stoichiometric ratio weigh Mg, In, S and Ni raw material, Vacuum Package is in being warming up to 700-800 DEG C of reaction-sintered in quartz glass tube, furnace cooling after heat preservation 24-48 hours, then secondary response is sintered under the same conditions to obtain the final product；Resulting Intermediate Gray solar absorption semiconductor has multi-band-gap wide spectrum solar absorption ability, is expected to push the development of intermediate carrying semiconductor material Yu high performance solar batteries technology.
Description
Technical field
The invention belongs to photoelectric conversion technical field of semiconductor, and in particular to a kind of Intermediate Gray solar absorption is partly led
Body and preparation method thereof.
Background technique
Semiconductor material such as silicon (Si), copper indium gallium selenide (CIGS) are absorbed, in tellurium cadmium (CdTe) in mainstream solar battery, energy
Amount is less than and solar battery efficiency can not be caused to be restricted by semiconductor using photoelectric current is converted into beyond bandwidth photon.
By impurity band engineering, after introducing half-full intermediate band in the parent compound band gap of semiconductor, electronics is from valence
To conduction band, in addition blanking bar of the electronics from valence to Intermediate Gray and it is energized into conduction band from the filled state of Intermediate Gray, at these three
Photon within the scope of excitation process energy gap can be absorbed by the intermediate carrying semiconductor material, to preferably utilize solar spectrum.
Just because of this, Intermediate Gray photovoltaic cell is considered as third generation photovoltaic technology with the Ultra-High Efficiency advantage of its beyond tradition battery
One of optional means.
MgIn2S4The optical absorption band gap of ternary compound is 2.28eV, absorbs half in efficient Intermediate Gray solar battery
In conductor optimization of material value (2.0~2.5eV) range；In addition, the compound belongs to direct band-gap semicondictor, visible light is managed
10 are up to by absorption coefficient4~105cm-1.Therefore, with MgIn2S4As acceptor, can be absorbed and utilized more after introducing intermediate band
More visible lights and near infrared light, MgIn2S4It is a kind of good Intermediate Gray semiconductor fertile material.
From the point of view of domestic and international present Research, there is presently no replace MgIn about selection Ni atom2S4Cationic In adjusts
The relevant report for controlling acceptor's semiconductor light electrical property, the intermediate carrying semiconductor material type with wide spectrum solar absorption is still
It is very rare, it is very necessary to develop new inorganic photovoltaic functional material.
Summary of the invention
For the drawbacks described above for overcoming the prior art, the purpose of the present invention is to provide a kind of Intermediate Gray solar absorptions partly to lead
Body obtains a kind of novel centre using the generation of transition group atom Ni induction interstitial impurity energy band by semiconductor doping technique
Carrying semiconductor material realizes multipotency bandwidth spectrum solar absorption, is expected to push intermediate carrying semiconductor material and high-efficiency solar
The development of battery technology.
The object of the invention is also to provide a kind of preparation methods of Intermediate Gray solar absorption semiconductor, solid by vacuum
State sintering reaction is made, and simple process is easily operated.
Above-mentioned purpose of the invention is achieved through the following technical solutions:
A kind of Intermediate Gray solar absorption semiconductor, the chemical general formula of the semiconductor are MgIn2-xNixS4, 0 < x in formula <
2。
Further, the parent compound of the semiconductor is MgIn2S4Ternary compound.
Further, the MgIn2S4In atom in part obtains MgIn replaced Ni atom in ternary compound2- xNixS4, 0 < x < 2 in formula.
Further, the doping concentration of transition metal atoms Ni optimization is not more than 5at%.
Further, the MgIn2-xNixS4Electronic band structure with half-full Intermediate Gray.
Further, the electronic band structure of the half-full Intermediate Gray is formed by Ni-3d and S-3p orbital hybridization.
A kind of preparation method of above-mentioned Intermediate Gray solar absorption semiconductor, using vacuum solid sintering reaction technique, tool
Body, comprising the following steps:
S1, according to MgIn2-xNixS4Stoichiometric ratio weigh Mg, In, Ni and S raw material, Vacuum Package is in quartz glass tube
In, and the effective oxyhydrogen flame of the quartz glass is sealed；
S2, the quartz glass tube in step S1 is placed in temperature programmed control Muffle furnace, is slowly risen with 2-5 DEG C/min of rate
Temperature is to 700-800 DEG C of reaction-sintered, furnace cooling after heat preservation 24-48 hours；
S3, product cooling in step S2 is poured out into grinding, then Vacuum Package is placed in quartz glass tube again
In temperature programmed control Muffle furnace, 700-800 DEG C of reaction-sintered is to slowly warm up to 2-5 DEG C/min of rate again, heat preservation 24-48 is small
When after regrind after furnace cooling to obtain the final product.
Further, Mg, In, Ni and S raw material described in step S1 include simple substance or binary compound, and purity is not low
In 99.99%.
Further, the value range of x described in step S1 is 0 < x < 2.
In one embodiment of the invention, Mg, In, Ni and S raw material is simple substance.
In another embodiment of the present invention, Mg, In, Ni and S raw material is binary compound.
On the basis of common knowledge of the art, above-mentioned each optimum condition can be in any combination up to each preferable reality of the present invention
Example；In addition the raw materials and reagents used in the present invention are unless otherwise stated commercially available or are conventional selection.
MgIn of the present invention2-xNixS4The X ray diffracting spectrum of ternary compound is spread out using Bruker D8ADVANCE X-ray
It penetrates instrument to measure, using 1 ray (0.15405nm) of Cu K α, scanning voltage 40kV, sweep current 40mA；The microcosmic shape of material
Looks and element surface analysis are using scanning electron microscope (the SEM JEOL for being equipped with energy disperse spectroscopy (EDS Oxofrd INCAx-car)
JSM-6510,20kV) it measures；The UV-visible-near infrared absorption of material is at Hitachi U4100UV-Vis-NIR points
It is measured on light photometer.
Present invention firstly provides adulterating using transition metal Ni, MgIn is induced2S4Generate half-full Intermediate Gray electron energy band knot
Structure replaces part In atom with foreign atom Ni, is formed in the band gap by main semiconductor by Ni-3d and S-3p orbital hybridization
New energy band.
Compared with prior art, the positive effect of the present invention is that:
(1) present invention MgIn excellent with photoelectric properties2S4It is used for Intermediate Gray semiconductor by semiconductor doping technique
The atom doped regulation parent compound MgIn of Ni2S4Band structure, obtain a kind of novel centre with metallicity band structure
Carrying semiconductor material realizes multipotency bandwidth spectrum solar absorption, pushes intermediate carrying semiconductor material and high performance solar batteries
The development of technology.
(2) present invention adulterates MgIn using solid state reaction sintering method preparation Ni2S4Series compound, simple process, easily
In operation, UV-visible-near infrared absorption further proves that the material of above method preparation has multi-band-gap wide spectrum too
Positive energy absorbability.
Detailed description of the invention
Fig. 1 is MgIn2S4Crystal structure schematic diagram；
Fig. 2 is MgIn2-xNixS4(x=0,0.05,0.1) XRD spectrum of series of samples；
Fig. 3 is MgIn1.9Ni0.1S4The SEM photograph of sample；
Fig. 4 is MgIn1.9Ni0.1S4The element surface analysis figure of Mg, In, Ni and S in sample；
Fig. 5 is MgIn2-xNixS4(x=0,0.05,0.1) the UV-Vis-NIR abosrption spectrogram of series of samples；
Fig. 6 is (a) MgIn2S4(b) the band structure figure after Ni doping.
Specific embodiment
Presently preferred embodiments of the present invention is provided with reference to the accompanying drawing, in order to explain the technical scheme of the invention in detail.
Embodiment 1
By Mg powder (purity 99.99%), In (purity 99.999%), S powder (purity 99.999%), Ni powder
(purity 99.99%) is according to MgIn2-xNixS4The stoichiometric ratio of (x=0,0.05,0.1) weighs, and reaction raw materials are put into stone
In English glass tube, and the effective oxyhydrogen flame of quartz glass is sealed；The quartz glass tube of sealing is put into temperature programmed control Muffle furnace,
750 DEG C of sintering are to slowly warm up to 2 DEG C/min of rates and keep the temperature 24 hours, then cool to room temperature with the furnace；It, will again after open pipe
Gained sample, which is placed in agate mortar, to be ground, and Vacuum Package is in quartz glass tube, being placed in temperature programmed control Muffle furnace, with 2
DEG C/min rate is to slowly warm up to 750 DEG C and is sintered and keeps the temperature again 48 hours, and sample cools to room temperature with the furnace, after open pipe again
It grinds to obtain the final product.
Embodiment 2
By Mg powder (purity 99.99%), In (purity 99.999%), S powder (purity 99.999%), Ni powder
(purity 99.99%) is according to MgIn2-xNixS4The stoichiometric ratio of (x=0,0.05,0.1) weighs, and reaction raw materials are put into stone
In English glass tube, and the effective oxyhydrogen flame of quartz glass is sealed；The quartz glass tube of sealing is put into temperature programmed control Muffle furnace,
700 DEG C are to slowly warm up to 5 DEG C/min of rates and keeps the temperature 48 hours, then cool to room temperature with the furnace；Again after open pipe, by gained
Sample is placed in agate mortar and grinds, Vacuum Package in quartz glass tube, being placed in temperature programmed control Muffle furnace, then with 5 DEG C/
Minute rate is to slowly warm up to 700 DEG C and is sintered and keeps the temperature again 48 hours, and sample cools to room temperature with the furnace, regrinds after open pipe
To obtain the final product.
Embodiment 3
The binary compound of Mg, In, S and Ni by purity not less than 99.99% are according to MgIn2-xNixS4(x=0,0.05,
0.1) stoichiometric ratio weighs, and reaction raw materials are put into quartz glass tube, and the effective oxyhydrogen flame of quartz glass is sealed；It will
The quartz glass tube of sealing is put into temperature programmed control Muffle furnace, is to slowly warm up to 800 DEG C with 3 DEG C/min of rates and heat preservation 24 is small
When, then cool to room temperature with the furnace；Again after open pipe, gained sample is placed in agate mortar and is ground, Vacuum Package is in quartzy glass
It in glass pipe, is placed in temperature programmed control Muffle furnace, then is to slowly warm up to 800 DEG C with 3 DEG C/min of rates and is sintered again and keeps the temperature 48
Hour, sample cools to room temperature with the furnace, regrinds after open pipe to obtain the final product.
Embodiment 4
The binary compound of Mg, In, S and Ni by purity not less than 99.99% are according to MgIn2-xNixS4(x=0,0.05,
0.1) stoichiometric ratio weighs, and reaction raw materials are put into quartz glass tube, and the effective oxyhydrogen flame of quartz glass is sealed；It will
The quartz glass tube of sealing is put into temperature programmed control Muffle furnace, is to slowly warm up to 750 DEG C with 4 DEG C/min of rates and heat preservation 24 is small
When, then cool to room temperature with the furnace；Again after open pipe, gained sample is placed in agate mortar and is ground, Vacuum Package is in quartzy glass
It in glass pipe, is placed in temperature programmed control Muffle furnace, then is to slowly warm up to 750 DEG C with 4 DEG C/min of rates and is sintered again and keeps the temperature 48
Hour, sample cools to room temperature with the furnace, regrinds after open pipe to obtain the final product.
Embodiment 5
By Mg powder (purity 99.99%), In (purity 99.999%), S powder (purity 99.999%), Ni powder
(purity 99.99%) is according to MgIn2-xNixS4The stoichiometric ratio of (x=0,0.05,0.1) weighs, and reaction raw materials are put into stone
In English glass tube, and the effective oxyhydrogen flame of quartz glass is sealed；The quartz glass tube of sealing is put into temperature programmed control Muffle furnace,
800 DEG C are to slowly warm up to 5 DEG C/min of rates and keeps the temperature 24 hours, then cool to room temperature with the furnace；Again after open pipe, by gained
Sample is placed in agate mortar and grinds, Vacuum Package in quartz glass tube, being placed in temperature programmed control Muffle furnace, then with 5 DEG C/
Minute rate is to slowly warm up to 800 DEG C and is sintered and keeps the temperature again 24 hours, and sample cools to room temperature with the furnace, regrinds after open pipe
To obtain the final product.
MgIn in effect example embodiment 12-xNixS4The test and characterization of (x=0,0.05,0.1)
To MgIn obtained in embodiment 12-xNixS4Ternary compound is tested and is characterized, and the results are shown in attached figure 1-6；Its
In, X ray diffracting spectrum is measured using Bruker D8ADVANCE X-ray diffractometer, using 1 ray of Cu K α
(0.15405nm), scanning voltage 40kV, sweep current 40mA；The microscopic appearance and element surface analysis of material are using assembly
There is the scanning electron microscope (SEM JEOL JSM-6510,20kV) of energy disperse spectroscopy (EDS Oxofrd INCAx-car) to measure；Material
The UV-visible-near infrared absorption of material measures on Hitachi U4100UV-Vis-NIR spectrophotometer.
It is MgIn referring to attached drawing 12S4Crystal structure schematic diagram, MgIn2S4Space group is Fd-3m, and 32 S anion account for
According to 32e, 8 Mg cations occupy 8a, and 16 In ions occupy 16d.
Referring to attached drawing 2, MgIn2-xNixS4The XRD spectrum and standard card (JCPDS# of (x=0,0.05,0.1) powder sample
31-0792) unanimously, show that obtained sample is single pure phase.
Referring to attached drawing 3,4, MgIn1.9Ni0.1S4EDX elemental analysis map confirmation crystal by tetra- kinds of members of Mg, In, S and Ni
Element is formed and is uniformly distributed in crystal.
It is MgIn referring to attached drawing 52-xNixS4The UV-Vis-NIR absorption spectrum of powder sample occurs due to the doping of Ni
Two new absorption bands, have expanded material absorption region significantly, wherein yellow background is AM1.5G standard solar spectrum；Ni mixes
The absorption curve of miscellaneous sample about near the 0.7eV increase, reach first absorption maximum in 1.05eV；Then, it inhales
Receipts are begun to decline, and are reduced to first the lowest point in 1.3eV；It then absorbs and starts to enhance again, second ABSORPTION EDGE occur, and
1.65eV reaches second peak value；Finally, there is third ABSORPTION EDGE near the 1.8eV.
It is (a) MgIn referring to attached drawing 62S4(b) the band structure map after Ni doping, the energy of comparison doping fore-and-aft architecture
Band structure, discovery Ni doping introduce new energy level, these energy levels provide new possible optical transitions approach, and band structure feature is good
The mechanism of Semiconductor absorption enhancing is illustrated, the density of electronic states of analysis Ni doping system finds that half-full Intermediate Gray is mainly derived from
The contribution of Ni-3d and S-3p track.
In conclusion transition metal atoms Ni is in MgIn in the present invention2S4In doping concentration be not more than 5at%, obtain one
Kind of new intermediate carrying semiconductor material, successfully realizes multipotency bandwidth spectrum solar absorption, push intermediate carrying semiconductor material and
The development of solar battery technology research field.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention are fallen within the scope of the claimed invention.
Claims (6)
1. a kind of Intermediate Gray solar absorption semiconductor, which is characterized in that the chemical general formula of the semiconductor is MgIn2-xNixS4,
0 < x < 2 in formula；Wherein: the MgIn2-xNixS4Electronic band structure with half-full Intermediate Gray, by parent compound MgIn2S4
Middle part In atom is replaced to obtain by Ni atom.
2. Intermediate Gray solar absorption semiconductor as described in claim 1, which is characterized in that the Ni atomic optimization is mixed
Miscellaneous concentration is not more than 5at%.
3. Intermediate Gray solar absorption semiconductor as described in claim 1, which is characterized in that the electronics of the half-full Intermediate Gray
Band structure is formed by Ni-3d and S-3p orbital hybridization.
4. the preparation method of any one of the claim 1-3 Intermediate Gray solar absorption semiconductor, which is characterized in that including with
Lower step:
S1, according to MgIn2-xNixS4Stoichiometric ratio weigh Mg, In, Ni and S raw material, Vacuum Package in quartz glass tube,
And the effective oxyhydrogen flame of the quartz glass is sealed；
S2, quartz glass tube in step S1 is placed in temperature programmed control Muffle furnace, is to slowly warm up to 2-5 DEG C/min of rate
700-800 DEG C of reaction-sintered, furnace cooling after heat preservation 24-48 hours；
S3, cooled product in step S2 is poured out into grinding, then Vacuum Package is placed in program control in quartz glass tube again
In warm Muffle furnace, 700-800 DEG C of reaction-sintered is to slowly warm up to 2-5 DEG C/min of rate again, after heat preservation 24-48 hours with
It is regrind after furnace is cooling to obtain the final product.
5. the preparation method of Intermediate Gray solar absorption semiconductor as claimed in claim 4, which is characterized in that described in step S1
Mg, In, Ni and S raw material include simple substance or binary compound.
6. the preparation method of Intermediate Gray solar absorption semiconductor as claimed in claim 5, which is characterized in that the Mg, In,
Ni and S material purity is not less than 99.99%.
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