CN104692450A - Preparation method for solar battery materials with three-zone gap tin doped with copper, gallium and sulphur - Google Patents
Preparation method for solar battery materials with three-zone gap tin doped with copper, gallium and sulphur Download PDFInfo
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Abstract
The invention discloses a preparation method for solar battery materials with three-zone gap tin doped with copper, gallium and sulphur. According to the preparation method for the solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur, copper chloride, gallium chloride, thiourea and stannic chloride are dissolved into ethylene glycol and then are mixed uniformly, a solvothermal synthesis reaction is conducted in a sealed steel-bushing teflon reaction still, then a solvothermal product is washed, filtered and dried, and a product is obtained. It is inferred from the growth mechanism that the preparation method for solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur is suitable for the preparation for the solar battery materials with other transmission metal elements including VIII ( Co, Fe, Ir, Ni, Pd, Rh ) doped with the three-zone gap tin. The obtained product is good in crystallinity, high in purity and uniform in morphology and distribution; an obvious ligh-induced switching effect is possessed, when there is no light, the dark current is nearly zero, and when there is light, the current intensity rises quickly; The preparation method for the solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur has the advantages that the preparation technology is simple, the repeatability is good, the cost is low, the controllability is strong, and the material usage rate is high; sulfidizing is not needed, the resultant temperature is low, and green and environmental protection are possessed.
Description
Technical field
The invention belongs to photoelectric material technical field of new energies, relate to the preparation method belonging to a kind of multi-band-gap solar cell absorbing material in third generation solar cell material, especially relate to three band gap tin (Sn) copper doped gallium sulphur (CuGaS
2) solvothermal preparation method of solar cell material.
Background technology
Energy industry as the basis of national economy, for the healthy living of socioeconomic Sustainable development and people provides important leverage.The exhaustion day by day of fossil energy and the destruction to ecotope, make the various renewable eco-friendly power source of research extremely urgent.Sun power because have recyclability, pollution-free, the features such as reserves are large and extremely people's favor.The solar cell of low cost and high performance-price ratio is provided to be the key that photovoltaic generation is applied.The primary approach realizing high conversion efficiency improves the utilization ratio of sunlight as far as possible.Multi-band-gap semiconductor solar cell model improves the utilization ratio to each wave band sunlight by electronics deep level transition transition in band gap.This kind of multi-band-gap semi-conductor has two or more by the very narrow energy gap that (or impurity band) can be with to separate, each energy gap has different width, therefore good absorption is had to the light of different wave length, photogenerated current can be impelled to increase, and keep output voltage constant, thus improve the efficiency of solar cell.Intermediate Gray battery can obtain maximum efficiency 63.2%.C.Tablero extensively forms free energy to the copper gallium sulphur of the atom doped displacement copper of transition metal and IV race or gallium and electronic structure is studied, find VIII (Co, Fe, Ir, Ni, Pd, Rh, Sn) can stable compound be formed after and IV race (Ge, Si) element doping, also form intermediate band simultaneously.Intermediate band-gap solar cell is also in theoretical research stage at present, utilizes impurity atoms to introduce intermediate band and forms multi-band-gap, thus improve the utilization ratio to each wave band sunlight.Obtain stable tin dope copper gallium sulphur phase, synthesis temperature more than 500 DEG C, otherwise can not can form copper gallium sulphur and the biphase equilibrium of copper tin sulphur.One of solvent-thermal process Research Characteristics is that research system is generally in imperfect nonequilibrium situations, and under response behaviour, solvent is in critical or supercritical state, and reactive behavior improves, and adds fast response and carries out.Its advantage is that product purity is high, and grain development is complete, is evenly distributed, chemical constitution precise control, and without the need to high-temperature roasting crystallization, particle agglomeration is less.Solvent-thermal process can prepare the metastable phase that traditional method cannot obtain.By regulating reaction conditions, as strength of solution, temperature of reaction, the time, pH value, precursor etc. can reach the object effectively controlling reaction and growth characteristics.Solvent-thermal method is not adopted to prepare the experimental study report of mid-gap tin dope copper gallium sulphur at present both at home and abroad.
Summary of the invention
The object of the present invention is to provide that a kind of technique is simple, cost is low, utilization rate of raw materials is high, preparation efficiency is high, and repeatability is high, the preparation method of three band gap tin dope copper gallium sulphur solar cell materials of composition environmental protection and morphology controllable.With cupric chloride, gallium chloride, tin tetrachloride, thiocarbamide is respectively as Cu
2+, Ga
3+, Sn
4+and S
2-source, is dissolved in ethylene glycol by certain mol proportion and is placed in the reaction of reactor solvent-thermal process again, naturally cool to room temperature, then use deionized water and absolute ethanol washing, and obtain after centrifugation drying after reaction terminates.Infer from growth mechanism, the method can be applicable to the preparation of other transition metal VIII (Co, Fe, Ir, Ni, Pd, Rh) element doping copper gallium sulphur three band gap solar cell materials.
The technical scheme that the present invention realizes above-mentioned purpose is:
A preparation method for three band gap tin dope copper gallium sulphur solar cell materials, comprises the steps:
(1) cupric chloride is dissolved in ethylene glycol, stirs and make it fully dissolve;
(2) add thiocarbamide again, stir and make it fully dissolve;
(3) add gallium chloride and gallium trichloride again, stir and make it fully dissolve;
(4) add tin tetrachloride again, stir to obtain reaction soln;
(5) above-mentioned reaction soln is placed in band teflon-lined reactor, 210 ~ 230 DEG C of reactions 12 ~ 24 hours, after naturally cooling, obtains solvent thermal product;
(6) solvent thermal product deionized water obtained above and dehydrated alcohol are washed 3 times respectively, centrifuging obtains solid product after being separated;
(7) by gained solid product in vacuum drying oven at 60 ~ 80 DEG C dry 6 ~ 12 hours, three band gap tin dope copper gallium sulphur solar cell material and final products are obtained.
Further, the molar concentration rate of described reactant cupric chloride, thiocarbamide, gallium chloride and tin tetrachloride is 1:2 ~ 2.5:1:0.05 ~ 0.2.
Further, the volume of described reaction soln accounts for 60 ~ 80% of reactor volume.
In a preference of the present invention, described reactant is according to cupric chloride: thiocarbamide: gallium chloride: the concentration ratio of tin tetrachloride is 1:2.5:1:0.05, is dissolved in solvent ethylene glycol; The volume of the reaction soln prepared accounts for 80% of reactor volume.
The reagent that the present invention participates in reacting is analytical pure, commercially available.
For the structure of the standby material of institute system, pattern, composition and optical property, X-ray diffraction analysis (XRD) has been carried out to prepared sample, scanning electron microscope analysis (SEM), tem study (TEM), energy dispersion X-ray spectroscopic analysis (EDS), X-ray photoelectron spectroscopic analysis (XPS), ultraviolet-visible light-near infrared spectrum (UV-Vis-– NIR) is analyzed, utilize spin-coating method that the copper gallium sulphur nano particle of tin dope is prepared into film, conductive silver glue is used the copper conductor polished smooth and film one end to be bondd, edge epoxy resins insulation glue bond is closed in addition, avoid leaky.The hypo solution of configuration 0.1M makes electrolytic solution, utilizes the photogalvanic cell response test of three-electrode method testing film.Prepared membrane electrode is as working electrode, and platinized platinum is as to electrode, and saturated calomel electrode (SCE) is as reference electrode.Adopt solar simulator (CHF-XM500 xenon source (500W), AM1.5,100mW/cm
2) make sunlight analog light source.
The tin dope copper gallium sulphur solar cell material be prepared from according to method disclosed by the invention, analyze to its XRD figure spectrum, low power SEM, EDS the tin dope copper gallium sulphur that known product is the yellow copper structure of pure phase, good crystallinity, topographic profile are even.Its high power SEM and TEM display, the tin dope copper gallium sulphur flower-like microsphere diameter 2 ~ 4 μm of preparation, the nanometer sheet being the thick nanometer of 12 ~ 20nm by thickness assembles.UV-Vis-– NIR absorption spectrum show sample has three obvious energy of absorption edge respectively at 460nm (2.69eV), 750nm (1.65eV) and 1280nm (0.97eV) place.Define an intermediate level after three energy of absorption edge confirm Sn doping, this energy gap conduction band is low is respectively 1.65eV and 0.97eV with top of valence band, and the electronics of Intermediate Gray is half occupied state, and this significantly increases the absorption of infrared light.The photogenerated current that photogalvanic cell response test display tin dope copper gallium sulphur compares fine copper gallium sulphur is greatly improved.
Beneficial effect of the present invention is:
(1) present invention achieves the controlled synthesis of the microscopic feature such as composition and pattern to three band gap tin dope copper gallium sulphur solar cell materials, in copper gallium sulphur crystal, intermediate level is introduced by tin dope success, absorb photons energy will expand to 0.97eV ~ 2.69eV, the absorption to infrared light can be improved greatly, impel photogenerated current to increase.
(2) resulting materials of the present invention has excellent potential quality in thin-film solar cell applications.
(3) the present invention does not need sulfuration anneal, avoids and uses the disadvantageous effect to environment such as hydrogen sulfide toxic gas or the annealing of sulphur powder.
Accompanying drawing explanation
The X-ray diffractogram of the tin dope copper gallium sulphur that Fig. 1 embodiment 1 is obtained.
The low power scanning electron microscope (SEM) photograph of the tin dope copper gallium sulphur that Fig. 2 embodiment 1 is obtained.
The high power scanning electron microscope (SEM) photograph of the tin dope copper gallium sulphur that Fig. 3 embodiment 1 is obtained.
The transmission electron microscope picture of the tin dope copper gallium sulphur that Fig. 4 embodiment 1 is obtained.
The energy spectrogram of the tin dope copper gallium sulphur that Fig. 5 embodiment 1 is obtained.
The Cu 2p x-ray photoelectron power spectrum areal map of the tin dope copper gallium sulphur that Fig. 6 embodiment 1 is obtained.
The Ga 3d x-ray photoelectron power spectrum areal map of the tin dope copper gallium sulphur that Fig. 7 embodiment 1 is obtained.
The S 2p x-ray photoelectron power spectrum areal map of the tin dope copper gallium sulphur that Fig. 8 embodiment 1 is obtained.
The Sn 3d x-ray photoelectron power spectrum areal map of the tin dope copper gallium sulphur that Fig. 9 embodiment 1 is obtained.
The study of ultraviolet-visible-near infrared figure of the tin dope copper gallium sulphur that Figure 10 embodiment 1 is obtained.
The photogalvanic cell response diagram of the tin dope copper gallium sulphur that Figure 11 embodiment 1 is obtained.
Embodiment
For a better understanding of the present invention, illustrate content of the present invention further below in conjunction with embodiment, but content of the present invention is not only confined to the following examples.
Embodiment 1
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 80 DEG C in vacuum drying oven, final product is obtained.
The XRD figure spectrum of the tin dope copper gallium sulphur flower-like microsphere product of the present embodiment gained and partial enlarged drawing are shown in Fig. 1, and low power scanning electron microscope (SEM) photograph is shown in Fig. 2, and high power scanning electron microscope (SEM) photograph is shown in Fig. 3; Transmission electron microscope picture is shown in Fig. 4; Fig. 5 can be seen by spectrogram; Fig. 6 to 9 is shown in by XPS collection of illustrative plates, and study of ultraviolet-visible-near infrared figure is shown in Figure 10; Photogalvanic cell response diagram is shown in Figure 11.
List embodiment 1 in Fig. 1 and prepare the XRD figure spectrum of sample and the partial enlarged drawing of characteristic diffraction peak.(112), (200)/(004) of the position of each characteristic diffraction peak of sample corresponding copper gallium sulphur tetragonal system, (220)/(204) and (312) crystal plane direction, the characteristic diffraction peak of built-in partial enlarged drawing display (112) crystal plane direction comparatively standard card collection of illustrative plates (JCPDS#25-0279) offsets left, the diffraction peak of built-in partial enlarged drawing display (112) crystal plane direction offsets to little angular direction, because of the radius (Sn of tin ion
4+,
) be greater than the radius (Ga of gallium ion
3+,
), when tin displacement gallium, according to bragg's formula: 2dsin θ=n λ, structure cell lattice parameter can be caused to become large, reaction offsets to little angular direction at X-ray characteristic diffraction peak, show that product is the tin dope copper gallium sulphur of yellow copper structure, and do not have other diffraction to mix peak in XRD figure spectrum, illustrate that the tin dope copper gallium sulphur that the solvent-thermal method that the present invention proposes is prepared is pure phase.
The low power scanning electron microscope (SEM) photograph of Fig. 2 can find out that the material of generation is the uniform flower-like microsphere of pattern.
The high power scanning electron microscope (SEM) photograph of Fig. 3 shows the flower-like microsphere diameter 2 ~ 4 μm generated.
The transmission electron microscope picture of Fig. 4 shows nanometer sheet that the flower-like microsphere that generates is the thick nanometer of 12 ~ 20nm by thickness and mutually intersects and assemble.
The product that the power spectrum graphs open-birth of Fig. 5 becomes only has copper, gallium, tin and element sulphur.
Fig. 6,7,8,9 shows Cu 2p respectively, the x-ray photoelectron power spectrum region collection of illustrative plates of Ga 3d, S 2p and Sn 3d, and the element further illustrating sample is formed.As can be seen from the figure, Cu 2p track is at 932.45eV (2p
3/2) and 953.15eV (2p
1/2) narrow doublet appears in two places, peak separation is 20.7eV, this and Cu
1+in conjunction with energy characteristic peak positions coincide.And Cu 2p
3/2exist without peak at 942eV place, thus can get rid of Cu
2+existence; In conjunction with the characteristic peak corresponding Ga 3d track spectrogram that can be positioned at 25.65eV place, with Ga
3+in conjunction with energy characteristic peak positions coincide; In conjunction with the characteristic peak corresponding S 2p track spectrogram that can be positioned at 161.96eV place, with S
2-in conjunction with energy characteristic peak positions coincide; Sn atom replaces Ga
3+after need formed one be similar to Sn
2s
3+ 3 valency oxidation state carry out balancing charge, Fig. 9 shows and is positioned at 486.66eV (3d
5/2) and 495.24eV (3d
3/2) spectral line of Sn 3d combined at two places, the Sn in the position description of these two spectral lines sample is by replacing Ga
3+position after in lattice with+3 valency oxidation state exist.This mode that show again tin atom copper doped gallium sulphur is Sn
gathe form of displacement atom.Therefore, in the target product synthesized in this experiment, the valence state of copper, gallium, sulphur, tin four element is respectively+1 ,+3 ,-2 ,+3.Tin atom carries out part of atoms replacement with the valence state form of positive trivalent and gallium atom, thus form the copper gallium sulphur crystalline phase of tin dope.
Figure 10 is the ultraviolet-visible-near-infrared spectrum absorption collection of illustrative plates that embodiment 1 prepares sample, and wave spectrum wavelength region is from 400nm to 1800nm.Three obvious energy of absorption edge can be found from figure.The energy of absorption edge of the absorption occurred at 460nm place corresponding copper gallium sulphur, corresponding band gap is 2.69eV, in addition has two energy of absorption edge at 750nm (1.65eV) and 1280nm (0.97eV) place.This is because introduce a new mid-gap energy level (IB) after tin dope copper gallium sulphur between valence band (VB) and conduction band (CB), reduce the excitation energy that energy level transition needs, thus produce two sub-energy of absorption edge h υ
1(VB → IB) and h υ
2(IB → CB).Experimental result shows that the doping of tin element makes mid-gap absorption characteristic produce, for it provides experiment basis as light absorption layer material.
There is obvious light activated switch effect in the photogalvanic cell response diagram show sample of Figure 11.When having illumination, photo-current intensity increases sharply, then photoelectric current stable direction state, and then during no light condition, photoelectric current drops to almost nil instantaneously.Tin dope copper gallium sulphur wants large compared with the photoresponse intensity of fine copper gallium sulphur, and step is more obvious.The raising of density of photocurrent is because Intermediate Gray energy level adds two sub-energy of absorption edge h υ
1(VB → IB) and h υ
2the photonic absorption of (IB → CB), has widened absorb photons energy region, has significantly increased photogenerated current.
Embodiment 2
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve; (2) add 1.6mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 80 DEG C in vacuum drying oven, final product is obtained.
Embodiment 3
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 210 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 80 DEG C in vacuum drying oven, final product is obtained.
Embodiment 4
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 230 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 80 DEG C in vacuum drying oven, final product is obtained.
Embodiment 5
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 12h at 60 DEG C in vacuum drying oven, final product is obtained.
Embodiment 6
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.04mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 210 DEG C of constant temperature 24h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 12h at 60 DEG C in vacuum drying oven, final product is obtained.
Embodiment 7
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 2mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.16mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 12h at 60 DEG C in vacuum drying oven, final product is obtained.
Embodiment 8
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 40ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 1.6mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.16mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 60 DEG C in vacuum drying oven, final product is obtained.
Embodiment 9
The solvent-thermal method preparation process of tin dope copper gallium sulphur three band gap solar cell material is as follows:
(1) be dissolved in 30ml ethylene glycol solution by the cupric chloride of 0.8mmol, uniform stirring makes it fully dissolve;
(2) add 1.6mmol thiocarbamide again, uniform stirring makes it fully dissolve;
(3) add the gallium chloride of 0.8mmol again, uniform stirring makes it fully dissolve;
(4) add 0.16mmol tin tetrachloride again, stir and obtain homogeneous reaction solution system;
(5) reaction soln system be transferred in 50ml teflon-lined reactor, at 220 DEG C of constant temperature 12h, naturally cooling obtains solvent thermal product;
(6) by gained solid product dry 6h at 80 DEG C in vacuum drying oven, final product is obtained.
Claims (3)
1. a preparation method for three band gap tin dope copper gallium sulphur solar cell materials, is characterized in that comprising the steps:
(1) cupric chloride is dissolved in ethylene glycol, stirs and make it fully dissolve;
(2) add thiocarbamide again, stir and make it fully dissolve;
(3) add gallium chloride again, stir and make it fully dissolve;
(4) add tin tetrachloride again, stir to obtain reaction soln;
(5) above-mentioned reaction soln is placed in band teflon-lined reactor, 210 ~ 230 DEG C of reactions 12 ~ 24 hours, after naturally cooling, obtains solvent thermal product;
(6) solvent thermal product deionized water obtained above and dehydrated alcohol are washed 3 times respectively, centrifuging obtains solid product after being separated;
(7) by gained solid product in vacuum drying oven at 60 ~ 80 DEG C dry 6 ~ 12 hours, three band gap tin dope copper gallium sulphur solar cell materials are obtained.
2. the preparation method of three band gap tin dope copper gallium sulphur solar cell materials according to claim 1, is characterized in that: the molar concentration rate of described reactant cupric chloride, thiocarbamide, gallium chloride and tin tetrachloride is 1:2 ~ 2.5:1:0.05 ~ 0.2.
3. the preparation method of three band gap tin dope copper gallium sulphur solar cell materials according to claim 1, is characterized in that: the volume of described reaction soln accounts for 60 ~ 80% of reactor volume.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226117A (en) * | 2015-09-28 | 2016-01-06 | 湘潭大学 | The method of copper indium gallium sulphur solar battery film material is prepared in a kind of bipotential step method electro-deposition after cure annealing |
| CN109545981A (en) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | A kind of organic solar batteries and preparation method thereof |
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| CN103606573A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院上海硅酸盐研究所 | Intermediate band absorbing material of chalcopyrite structure and preparing method thereof |
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| CN103606573A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院上海硅酸盐研究所 | Intermediate band absorbing material of chalcopyrite structure and preparing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226117A (en) * | 2015-09-28 | 2016-01-06 | 湘潭大学 | The method of copper indium gallium sulphur solar battery film material is prepared in a kind of bipotential step method electro-deposition after cure annealing |
| CN109545981A (en) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | A kind of organic solar batteries and preparation method thereof |
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