CN114868258A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN114868258A
CN114868258A CN202080089138.7A CN202080089138A CN114868258A CN 114868258 A CN114868258 A CN 114868258A CN 202080089138 A CN202080089138 A CN 202080089138A CN 114868258 A CN114868258 A CN 114868258A
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CN
China
Prior art keywords
film
semiconductor substrate
semiconductor device
region
insulating material
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Pending
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CN202080089138.7A
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English (en)
Chinese (zh)
Inventor
中西贤太郎
可部达也
森三佳
斋藤繁
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of CN114868258A publication Critical patent/CN114868258A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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CN202080089138.7A 2019-12-27 2020-12-01 半导体装置及半导体装置的制造方法 Pending CN114868258A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-238445 2019-12-27
JP2019238445 2019-12-27
PCT/JP2020/044735 WO2021131539A1 (ja) 2019-12-27 2020-12-01 半導体装置及び半導体装置の製造方法

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CN114868258A true CN114868258A (zh) 2022-08-05

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CN202080089138.7A Pending CN114868258A (zh) 2019-12-27 2020-12-01 半导体装置及半导体装置的制造方法

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US (1) US20220310674A1 (https=)
JP (1) JPWO2021131539A1 (https=)
CN (1) CN114868258A (https=)
WO (1) WO2021131539A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090020795A1 (en) * 2007-07-18 2009-01-22 Hiroyuki Doi Solid-state imaging element and method for fabricating the same
JP2010080648A (ja) * 2008-09-25 2010-04-08 Panasonic Corp 固体撮像装置及びその製造方法
CN103493202A (zh) * 2011-05-31 2014-01-01 松下电器产业株式会社 固体摄像装置及其制造方法
CN103681714A (zh) * 2012-09-11 2014-03-26 瑞萨电子株式会社 摄像装置及其制造方法
CN107845649A (zh) * 2016-09-20 2018-03-27 松下知识产权经营株式会社 摄像装置及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906364B2 (en) * 2001-06-26 2005-06-14 United Microelectronics Corp. Structure of a CMOS image sensor
JP2009170789A (ja) * 2008-01-18 2009-07-30 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
JP2013055113A (ja) * 2011-09-01 2013-03-21 Sharp Corp 固体撮像素子
JP2015130442A (ja) * 2014-01-08 2015-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2016092203A (ja) * 2014-11-04 2016-05-23 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
JP6978893B2 (ja) * 2017-10-27 2021-12-08 キヤノン株式会社 光電変換装置、その製造方法及び機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090020795A1 (en) * 2007-07-18 2009-01-22 Hiroyuki Doi Solid-state imaging element and method for fabricating the same
JP2010080648A (ja) * 2008-09-25 2010-04-08 Panasonic Corp 固体撮像装置及びその製造方法
CN103493202A (zh) * 2011-05-31 2014-01-01 松下电器产业株式会社 固体摄像装置及其制造方法
CN103681714A (zh) * 2012-09-11 2014-03-26 瑞萨电子株式会社 摄像装置及其制造方法
CN107845649A (zh) * 2016-09-20 2018-03-27 松下知识产权经营株式会社 摄像装置及其制造方法

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JPWO2021131539A1 (https=) 2021-07-01
WO2021131539A1 (ja) 2021-07-01
US20220310674A1 (en) 2022-09-29

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Application publication date: 20220805