CN114859515B - Catadioptric objective optical system for projection lithography and projection lithography system - Google Patents
Catadioptric objective optical system for projection lithography and projection lithography system Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 96
- 238000001459 lithography Methods 0.000 title claims abstract description 40
- 238000001228 spectrum Methods 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims abstract description 4
- 230000004075 alteration Effects 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 16
- 230000003595 spectral effect Effects 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000006978 adaptation Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0055—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing a special optical element
- G02B13/0065—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing a special optical element having a beam-folding prism or mirror
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0856—Catadioptric systems comprising a refractive element with a reflective surface, the reflection taking place inside the element, e.g. Mangin mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
Abstract
The invention provides a refraction and reflection type objective optical system for projection lithography and a projection lithography system, which have the characteristics of wide spectrum adaptation, simple structure, less lens number and lower production cost, wherein a first lens group has positive focal power, a second lens group has negative focal power, the mirror surface of a third lens group, which is farthest from an object plane, is a reflecting curved surface, the reflecting curved surface is formed by plating a reflecting film on the mirror surface of the third lens group, which is farthest from the object plane, and a light beam emitted by the object plane sequentially passes through the first lens group and the second lens group, then reaches the third lens group, is reflected by the reflecting curved surface, and then sequentially passes through the third lens group, the second lens group and the first lens group, and then is converged and imaged to an image plane, and the objective optical system satisfies the following relation: 0.2< f1/L <0.8, 0.3< -R/L <1.3, f1 is the combined focal length of the first lens group, L is the optical distance from the object plane to the image plane of the optical system, and R is the curvature radius of the reflecting curved surface.
Description
Technical Field
The invention relates to the technical field of projection lithography, in particular to a catadioptric objective optical system for projection lithography and a projection lithography system.
Background
Photolithography is a technique for projection replication of a mask pattern with light. The integrated circuit is made by a projection exposure apparatus. Patterns with different mask patterns are imaged onto a substrate, such as a silicon wafer or LCD panel, by means of a projection exposure apparatus for manufacturing a series of structures, such as integrated circuits, thin film magnetic heads, liquid crystal display panels, or microelectromechanical (MEMS).
Along with the development of high integration and microminiaturization of electronic products, higher requirements are put on exposure technology, the problems of complex structure and multiple lenses exist in the lenses on the market at present, the spectrum range applicable to the projection objective of the existing photoetching machine is very narrow, aberration such as chromatic aberration which cannot be well corrected for different wavelengths is not applicable to exposure of multispectral combination, and the application is limited when exposure with higher energy is required.
Disclosure of Invention
In view of the above problems, the present invention provides a catadioptric objective optical system for projection lithography and a projection lithography system, which have characteristics of wide spectrum adaptation, simple structure, fewer lenses, and lower production cost.
The technical scheme is as follows: a catadioptric objective optical system for projection lithography, provided in sequence along an optical axis with: first mirror group, second mirror group, third mirror group, its characterized in that: the first lens group has positive focal power, the second lens group has negative focal power, the mirror surface farthest from the object plane of the third lens group is a reflecting curved surface, the reflecting curved surface is formed by plating a reflecting film on the mirror surface farthest from the object plane of the third lens group, after the light beams emitted by the object plane sequentially pass through the first lens group and the second lens group to reach the third lens group, the light beams are reflected by the reflecting curved surface, and then sequentially pass through the third lens group, the second lens group and the first lens group to be converged and imaged to the image plane, and the objective optical system satisfies the following formula:
0.2<f1/L<0.8
0.3<-R/L<1.3
wherein f1 is the combined focal length of the first lens group, L is the optical distance from the object plane to the image plane of the optical system, and R is the curvature radius of the reflecting curved surface;
the first lens group at least comprises 1 positive lens, and satisfies the relation:
Vd1>55
vd1 is the abbe number of the positive lens of the first lens group.
Further, the second lens group at least comprises 1 positive lens and 1 negative lens, and satisfies the relation:
0.21<-f2/L<0.85
0.45<-f1/f2<1.9
wherein f2 is the combined focal length of the second lens group.
Further, the third lens group has positive focal power, and satisfies the relation:
0.18<f3/L<0.8
wherein f3 is the combined focal length of the third lens group.
Further, the lenses of the first lens group, the second lens group and the third lens group are spherical lenses respectively, the first lens group comprises a first lens, the first lens is a positive lens, a first side surface of the first lens far away from the reflecting curved surface is a convex surface, and a second side surface of the first lens close to the reflecting curved surface is a convex surface;
the second lens group comprises a second lens and a third lens, the second lens is a positive lens, a first side surface of the second lens, which is far away from the reflecting curved surface, is a convex surface, and a second side surface of the second lens, which is close to the reflecting curved surface, is a convex surface;
the third lens is a negative lens, a first side surface of the third lens, which is far away from the reflecting curved surface, is a concave surface, and a second side surface of the third lens, which is close to the reflecting curved surface, is a concave surface;
the third lens group comprises a fourth lens, the fourth lens is a positive lens, a first side surface of the fourth lens, which is far away from the reflecting curved surface, is a convex surface, and a second side surface of the fourth lens, which is close to the reflecting curved surface, is a convex surface.
Further, the objective optical system further satisfies:
Hy/f1≥0.06
where Hy is the maximum field image height.
Further, the first lens group includes a positive lens, the second lens group includes a positive lens and a negative lens, and the relation is satisfied:
0.21<d0/d1<0.85
0.19<(d0+d1)/L<0.8
wherein d0 is the optical distance between the object plane and the first lens group, d1 is the optical distance between the first lens group and the second lens group,
furthermore, the applicable spectrum range of the objective optical system is 360-441 nm, and the optical system can correct aberration for three spectral lines of i line, h line and g line in a spectrum.
Further, the objective optical system further comprises a reflecting mirror, the reflecting mirror comprises a first reflecting plane and a second reflecting plane, a straight line intersecting the first reflecting plane and the second reflecting extension plane is perpendicular to an optical axis formed by the first reflecting plane, the second reflecting plane and the third reflecting plane, the object plane and the image plane are parallel to each other and are parallel to the optical axis, a light beam emitted from the object plane enters the first reflecting plane after being reflected by the first reflecting plane, and the light beam emitted from the first reflecting plane sequentially passes through the first reflecting plane, the second reflecting plane and the third reflecting plane, then passes through the third reflecting plane, the second reflecting plane and the first reflecting plane, and finally is focused and imaged on the image plane after being reflected by the second reflecting plane.
Further, a cooling device is arranged at the position of the reflecting curved surface and used for controlling the temperature of the reflecting curved surface, and the cooling device is any one or a combination of a plurality of heat conduction cooling type devices, convection cooling type devices and electric refrigerating type devices.
A projection lithography system comprising a catadioptric objective optical system as described above for projection lithography.
The catadioptric objective optical system for projection lithography only adopts the first lens group, the second lens group and the third lens group, and the mirror surface farthest from the object plane of the third lens group is a reflecting curved surface, so that the purposes of fewer lenses are realized, the structure is simple, the exposure light intensity is improved, the time period is reduced, and the price cost is reduced; the projection objective of the invention is applicable to spectral line combinations with the wavelength of 365nm, 405nm and 436 nm; the chromatic aberration and the aberration can be well corrected, the exposure of multiple purposes can be satisfied, the method is suitable for exposure technology with larger exposure dose, is suitable for photosensitive materials with different spectral lines, and has wider application; the catadioptric objective optical system for projection lithography increases the field size of projection exposure and improves the yield through the combination of the first lens group, the second lens group and the third lens group.
Drawings
FIG. 1 is a schematic diagram of the composition of a catadioptric objective optical system for projection lithography in one embodiment;
FIG. 2 is a schematic diagram of another embodiment of a refractive-reflective objective optical system for projection lithography;
FIG. 3 is a schematic view of a field of view in an embodiment;
fig. 4 is a transfer function MTF diagram of a catadioptric objective optical system for projection lithography in an embodiment.
Detailed Description
Referring to fig. 1, a catadioptric objective optical system for projection lithography of the present invention is provided with, in order along an optical axis: the first lens group G1, the second lens group G2 and the third lens group G3, wherein the first lens group G1 has positive focal power, the second lens group has negative focal power, the mirror surface farthest from the object plane of the third lens group is a reflecting curved surface M1, the reflecting curved surface is formed by plating a reflecting film on the mirror surface farthest from the object plane of the third lens group, after the light beams emitted by the object plane sequentially pass through the first lens group and the second lens group to reach the third lens group, the light beams are reflected by the reflecting curved surface M1, and then sequentially pass through the third lens group, the second lens group and the first lens group to be converged and imaged to an image plane, and the objective optical system satisfies the following relation:
0.2<f1/L<0.8
0.3<-R/L<1.3
wherein f1 is the combined focal length of the first lens group, L is the optical distance from the object plane to the image plane of the optical system, and R is the curvature radius of the reflective curved surface M1;
the first lens group at least comprises 1 positive lens, and satisfies the relation:
Vd1>55
vd1 is the abbe number of the positive lens of the first lens group.
In the embodiment of the invention, the constraint of 0.2< f1/L <0.8 on the focal length of the first lens group G1 can avoid causing excessive spherical aberration and chromatic aberration, and the effective compensation is conveniently carried out through other optical components; avoiding damaging the overall structure of the optical system; the telecentric light paths of the object space and the image space are ensured, and the imaging quality is not reduced;
by the constraint on the focal length of the reflective curved surface M1, the spherical aberration, chromatic aberration and field curvature aberration of the optical system, especially advanced axial chromatic aberration, can be effectively compensated; avoiding the structural bulkiness caused by destroying the integral structure of the optical system.
By defining the dispersion coefficient of the first lens group, aberration can be corrected better.
In the embodiment of the present invention, the second lens group G2 includes at least 1 positive lens and 1 negative lens, and satisfies the relationship:
0.21<-f2/L<0.85
0.45<-f1/f2<1.9
wherein f2 is the combined focal length of the second lens group.
By the constraint on the focal lengths of the first lens group G1, the second lens group G2, it is possible to avoid causing excessive spherical aberration and chromatic aberration so that it is difficult to perform balanced and effective compensation by other optical components.
In an embodiment of the present invention, the third lens group has positive optical power, and satisfies the relationship:
0.18<f3/L<0.8
wherein f3 is the combined focal length of the third lens group; by the constraint on the focal length of the third lens group G3, spherical aberration, chromatic aberration, and curvature of field aberration of the optical system can be effectively compensated; avoiding damaging the whole structure of the optical system, resulting in too small working distance of the optical system.
In an embodiment of the present invention, the first lens group includes one positive lens, the second lens group includes one positive lens and one negative lens, and the relation is satisfied:
0.21<d0/d1<0.85
0.19<(d0+d1)/L<0.8
wherein d0 is the optical distance between the object plane and the first lens group, d1 is the optical distance between the first lens group and the second lens group, and various optical aberrations can be well balanced within the range, otherwise, exceeding the upper limit or the lower limit, particularly causing excessive spherical aberration and chromatic aberration to cause difficulty in effective compensation through other optical components; destroying the overall structure of the optical system; it is difficult to construct telecentric optical paths of the object side and the image side, resulting in degradation of imaging quality.
In particular, in one embodiment, the lenses of the first lens group G1, the second lens group G2, and the third lens group G3 are spherical lenses, which can further reduce the time period and reduce the price cost, and in an embodiment of the present invention, an objective optical system is provided, which can be applied in a digital projection lithography system, and the objective optical system includes:
the first lens group G1 includes a first lens L1, the first lens L1 is a positive lens, a first side surface of the first lens L1 far from the reflective curved surface M1 is a convex surface, and a second side surface of the first lens L1 near to the reflective curved surface M1 is a convex surface;
the second lens group G2 includes a second lens L2 and a third lens L3, the second lens L2 is a positive lens, a first side surface of the second lens L2 away from the reflective curved surface M1 is a convex surface, and a second side surface of the second lens L2 close to the reflective curved surface M1 is a convex surface;
the third lens L3 is a negative lens, a first side surface of the third lens L3 far away from the reflecting curved surface M1 is a concave surface, and a second side surface of the third lens L3 close to the reflecting curved surface M1 is a concave surface;
the third lens group G3 includes a fourth lens L4, the fourth lens L4 is a positive lens, a first side surface of the fourth lens L4 away from the reflective curved surface M1 is a convex surface, and a second side surface of the fourth lens L4 close to the reflective curved surface M1 is a convex surface.
In the embodiment of the invention, by providing the combination of positive and negative refractive powers of the lenses in the lens group comprising the first lens element to the fourth lens element, aberration can be mutually corrected, and the resolution is improved.
In the embodiment of the invention, the optical system can correct aberration for three spectral lines of i line, h line and g line in a spectrum, the spectral range of the objective optical system is 360nm-441nm, the optical system can correct aberration for three spectral lines of i line, h line and g line in the spectrum, the wavelengths of the three spectral lines of i line, h line and g line are 365 nanometers, 405 nanometers, 436 nanometers, i line, h line and g line respectively, and the g line is the characteristic wavelength of a high-pressure mercury light source during exposure, the optical system can improve the optical performance by improving the aberration, the utilization rate of the light source is improved, and the exposure intensity is greatly improved; the method is suitable for photoetching exposure with larger exposure dose; is suitable for photosensitive materials with different spectral lines.
In the embodiment of the present invention, hy=145 mm, the objective optical system also satisfies:
Hy/f1≥0.06
wherein, hy is the maximum field image height, and the objective optical system satisfies the relation: hy/f 1. Gtoreq.0.06 wherein, as shown in FIG. 3, the field of view is generally a circular range, hy is the radius of this circle, and Hy more completely and accurately represents the size of the field of view relative to the manner in which the size of the field of view is represented by the side length XX X YY of the field of view. In this embodiment, the lens groups are matched with the lenses in the lens groups, so that the problem of smaller field of view of the projection objective can be solved, the objective projection with wider spectrum and larger field of view can be realized, the exposure field of the lithography system can be increased, and the lithography yield of the lithography machine can be improved.
Referring to fig. 2, in another embodiment of the present invention, on the basis of the foregoing embodiment, the objective optical system further includes a reflecting mirror, where the reflecting mirror includes a first reflecting plane M2 and a second reflecting plane M3, a straight line intersecting the first reflecting plane M2 and an extension plane of the second reflecting plane is perpendicular to an optical axis formed by the first lens group G1, the second lens group G2 and the third lens group G3, the object planes are parallel to each other and are parallel to the optical axis, a light beam emitted from the object plane is reflected by the first reflecting plane M2 and enters the first lens group G1, and a light beam emitted from the first lens group G1 sequentially passes through the first lens group G1, the second lens group G2 and the third lens group G3, passes through the third lens group G3, the second lens group G2 and the first lens group G1 after being reflected by the reflecting curved surface M1, and then is focused on the image plane after being reflected by the second reflecting plane M3.
Through the arrangement, the optical system is compact in structure, the object image of the projection objective lens has a larger object image space working distance, enough space is reserved for the interface design of the follow-up optical system and the illumination system, the mask and the silicon wafer system, and the integral assembly requirement of the photoetching machine is met.
In one embodiment of the present invention, the position of the reflecting curved surface of the fourth lens L4 is provided with a cooling device, the cooling device is used for controlling the temperature of the reflecting curved surface, in the large-view-field optical system, the reflecting curved surface is relatively small, when all exposure beam energy is converged at the reflecting curved surface, the beam energy per unit area is rapidly increased, because the reflecting curved surface can absorb a very small part of the beam energy and convert the light energy into heat, the temperature of the reflecting curved surface is increased to generate thermal expansion, and the cooling device can effectively remove the light energy absorbed by the reflecting curved surface outside the optical system, so that the cooling device has good photo-thermal stability and is suitable for an exposure process with a large exposure dose.
Specifically, the cooling device is any one or a combination of a plurality of heat conduction cooling type device, convection cooling type device and electric refrigerating type device, so that the light energy absorbed by the reflecting curved surface is effectively discharged out of the optical system, and the cooling device has good photo-thermal stability and is suitable for an exposure process with larger exposure dose.
In one embodiment, the first lens group G1, the second lens group G2, the third lens group G3 satisfy:
the first lens L1, the refractive index nd satisfies 1.4< nd <1.5, and the dispersion coefficient vd satisfies 80< vd <90;
a second lens L2 having a refractive index nd of 1.5< nd <1.6 and a dispersion coefficient vd of 50< vd <60;
a third lens L3 having a refractive index nd of 1.5< nd <1.6 and a dispersion coefficient vd of 50< vd <60;
a fourth lens L4 having a refractive index nd of 1.4< nd <1.5 and a dispersion coefficient vd of 80< vd <90;
specifically, the numerical aperture na=0.06 of the objective optical system; object space field image height: hy=145 mm; the invention also provides specific optical parameters of the objective optical system of one embodiment, as shown in the following table 1:
TABLE 1
In this example, the characteristic parameters are shown in table 2.
| (1) | f1/L＝ | 0.39 |
| (2) | -f2/L＝ | 0.41 |
| (3) | -R/L＝ | 0.61 |
| (4) | f3/L＝ | 0.37 |
| (5) | -f1/f2＝ | 0.95 |
| (6) | d0/d1＝ | 0.42 |
| (7) | (d0+d1)/L＝ | 0.39 |
| (8) | Hy/f1＝ | 0.19 |
TABLE 2
Fig. 4 is a schematic diagram of an optical modulation transfer function of the catadioptric objective in the present embodiment. An optical Modulation Transfer Function (MTF) is used to evaluate the efficiency of a pattern of different spatial frequencies transferred through an optical system to an image plane, the optical Modulation Transfer Function (MTF) curve being plotted on the abscissa as spatial frequency, in line pairs/mm, and on the ordinate as modulation function.
As can be seen from the MTF curve, the MTF values for the representative hy=15 field of view and the maximum field of view hy=145 are already very close to the diffraction limit value. The diffraction limit means that when an ideal object point is imaged by an optical system, it is impossible to obtain an ideal image point due to the limitation of diffraction of light of physical optics, but a diffraction image of the diffraction image of the diffraction system is obtained, and the diffraction image is the diffraction limit of the physical optics, that is, the maximum value.
It can be seen that the present invention can approach the diffraction limit of physical optics over a wide range of the ultraviolet spectrum.
In view of the advantages, the wide-field, wide-spectrum and full-sphere catadioptric objective is very suitable for photoetching machine research and development, production or scientific research units.
In an embodiment of the present invention, there is also provided a projection lithography system including the catadioptric objective optical system for projection lithography described above.
The projection lithography system in the embodiment uses a smaller number of lenses, so that the installation difficulty of the lithography lens can be reduced, the process of the PCB manufacturing process can be improved, and the manufacturing cost of the lithography lens is effectively reduced.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. An catadioptric objective optical system for projection lithography, comprising a first lens group, a second lens group and a third lens group arranged in sequence along an optical axis, characterized in that: the first lens group has positive focal power, the second lens group has negative focal power, the mirror surface farthest from the object plane of the third lens group is a reflecting curved surface, the reflecting curved surface is formed by plating a reflecting film on the mirror surface farthest from the object plane of the third lens group, after the light beams emitted by the object plane sequentially pass through the first lens group and the second lens group to reach the third lens group, the light beams are reflected by the reflecting curved surface, and then sequentially pass through the third lens group, the second lens group and the first lens group to be converged and imaged to the image plane, and the objective optical system satisfies the following formula:
f1/L＝0.39
-R/L＝0.61
wherein f1 is the combined focal length of the first lens group, L is the optical distance from the object plane to the image plane of the optical system, and R is the curvature radius of the reflecting curved surface;
the first lens group at least comprises 1 positive lens, and satisfies the relation:
Vd1>55
vd1 is the dispersion coefficient of the positive lens of the first lens group;
the lenses of the first lens group, the second lens group and the third lens group are spherical surfaces respectively, the first lens group consists of a first lens, the first lens is a positive lens, a first side surface of the first lens, which is far away from the reflecting curved surface, is a convex surface, and a second side surface of the first lens, which is close to the reflecting curved surface, is a convex surface;
the second lens group consists of a second lens and a third lens, the second lens is a positive lens, a first side surface of the second lens, which is far away from the reflecting curved surface, is a convex surface, and a second side surface of the second lens, which is close to the reflecting curved surface, is a convex surface;
the third lens is a negative lens, a first side surface of the third lens, which is far away from the reflecting curved surface, is a concave surface, and a second side surface of the third lens, which is close to the reflecting curved surface, is a concave surface;
the third lens group is composed of a fourth lens, the fourth lens is a positive lens, a first side surface of the fourth lens, which is far away from the reflecting curved surface, is a convex surface, and a second side surface of the fourth lens, which is close to the reflecting curved surface, is a convex surface.
2. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the second lens group at least comprises 1 positive lens and 1 negative lens, and satisfies the relation:
-f2/L＝0.41
wherein f2 is the combined focal length of the second lens group.
3. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the catadioptric objective optical system also satisfies the relation: f1/f2=0.95, where f2 is the combined focal length of the second lens group.
4. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the third lens group has positive focal power and satisfies the relation:
f3/L＝0.37
wherein f3 is the combined focal length of the third lens group.
5. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the first lens group comprises a positive lens, the second lens group comprises a positive lens and a negative lens, and the relation is satisfied:
d0/d1＝0.42
(d0+d1)/L＝0.39
wherein d0 is the optical distance between the object plane and the first lens group, and d1 is the optical distance between the first lens group and the second lens group.
6. A catadioptric objective optical system for projection lithography as claimed in claim 4, wherein: the objective optical system further satisfies:
Hy/f1＝0.19
where Hy is the maximum field image height.
7. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the applicable spectrum range of the objective optical system is 360-441 nm, and the optical system can correct aberration for three spectral lines of i line, h line and g line in a spectrum.
8. A catadioptric objective optical system for projection lithography according to claim 1, wherein: the objective optical system further comprises a reflecting mirror, the reflecting mirror comprises a first reflecting plane and a second reflecting plane, a straight line intersecting with an extension plane of the first reflecting plane and the second reflecting plane is perpendicular to an optical axis formed by the first reflecting plane, the second reflecting plane and the third reflecting plane, an object plane and an image plane are parallel to each other and are parallel to the optical axis, a light beam emitted from the object plane enters the first reflecting plane after being reflected by the first reflecting plane, and a light beam emitted from the first reflecting plane sequentially passes through the first reflecting plane, the second reflecting plane and the third reflecting plane, then passes through the third reflecting plane, the second reflecting plane and the first reflecting plane, and finally is focused and imaged on the image plane after being reflected by the second reflecting plane.
9. A catadioptric objective optical system for projection lithography as claimed in claim 8, wherein: the cooling device is arranged at the position of the reflecting curved surface and is used for controlling the temperature of the reflecting curved surface, and the cooling device is any one or a combination of a plurality of heat conduction cooling type devices, convection cooling type devices and electric refrigerating type devices.
10. Projection lithography system, characterized by comprising a catadioptric objective optical system for projection lithography according to any one of claims 1 to 9.
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| CN114859515A (en) | 2022-08-05 |
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