CN103353669B - High numerical aperture immersion projection objective - Google Patents
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- CN103353669B CN103353669B CN201310325062.5A CN201310325062A CN103353669B CN 103353669 B CN103353669 B CN 103353669B CN 201310325062 A CN201310325062 A CN 201310325062A CN 103353669 B CN103353669 B CN 103353669B
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- 238000007654 immersion Methods 0.000 title claims abstract description 13
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- 230000005499 meniscus Effects 0.000 claims description 21
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 5
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Abstract
The invention provides a high-numerical aperture immersion projection objective which is used for imaging an image of an object plane into an image plane; the immersion projection objective lens comprises a parallel flat plate group, a first lens group, a reflector group and a second lens group along the optical axis direction; the parallel flat plate group is provided with a parallel flat plate in sequence from the incident direction of the light beam, the first lens group has positive focal power, the reflector group has negative focal power, and the second lens group has positive focal power. The high-numerical-aperture immersion projection lens group can better compensate aberration, improve the imaging quality, improve the resolution of the objective lens and improve the photoetching efficiency.
Description
Technical field
The present invention relates to a kind of high-NA submergence projection objective, particularly relate to a kind of high resolution light projection photoetching objective lens.
Background technology
Optical projection lithography is the principle utilizing optical projection imaging, by IC figure on mask with Step-and-repeat or step-scan exposure mode by high resolution Graphic transitions to the optical exposure process on gluing silicon chip.Optical projection lithography technology grows up in contact and proximity lithography technical foundation.Adopt projection lithography, mask serviceable life can be extended, if adopt the projection objective of reduction magnification, be also convenient to mask manufacture.Optical projection lithography experienced by the evolution of Step-and-repeat photoetching (stepper) and step-scan photoetching (scanner).
Photolithography resolution can be improved by the numerical aperture shortening wavelength, reduction process constant and raising light projection photoetching objective lens.Facts have proved, shortening exposure wavelength is the most effective approach.Optical projection lithography technology successively experienced by several technological phases such as 436nm (g line), 365nm (i line), 248nm (KrF excimer laser), 193nm (ArF excimer laser) since being born from 1978.Except shortening exposure wavelength, constantly reducing technological coefficient k1 is also the very important factor improving resolving power further.The approach reducing k1 value comprise improve lighting condition, improve resist performance, employing several aspect such as optical proximity correction and phase shifting mask.Through the effort of nearly 10 years, technological coefficient factor k1 value has been made to be reduced to 0.4 from 0.7 in large production environment.The better combination of above-mentioned factor will make k1 value be reduced to 0.3 and even less, and this will become a Strategic Measure of an optical lithography development in period from now on.As k1=0.25, just close to the physics limit of optical lithography.Increasing numerical aperture is also improve the important channel of photolithography resolution, and the numerical aperture of camera lens increases to 0.82 gradually by initial 0.28,0.4,0.6, even 0.85, almost arrive the limit.When projection photolithography, image-side numerical aperture is by the restriction of the surrounding medium refractive index in image space.In immersion lithographic method, numerical aperture possible is in theory by the restriction of immersing medium refractive index.But for the consideration of reality, numerical aperture should at random close to the refractive index of last medium, because therefore angle of propagation can become very large relative to optical axis.Industry is verified, and it is feasible that numerical aperture is no more than 95% of last medium refraction index of image space substantially.This corresponds to the angle of propagation of about 72 °, relative optical axis.For the operation wavelength of 193nm, this corresponds at water (n=1.43) is 1.35 as numerical aperture when immersing medium.
Summary of the invention
In order to the problem of prior art solved, the object of this invention is to provide a kind of high-NA submergence projection objective device, improve projection objective resolving power.The present invention proposes applicable a kind of deep ultraviolet illumination, numerical aperture reaches the light projection photoetching objective lens of 1.35, and this objective lens arrangement is compact, Large visual angle, image quality are excellent, and has moderate size and material consumption.
For reaching object of the present invention, the technical scheme of a kind of high-NA submergence projection objective provided by the invention comprises, and is equipped with parallel flat group, the first lens combination, catoptron group and the second lens combination successively from light beam incident direction; Wherein: parallel flat group does not have focal power; First lens combination is complicated double gauss structure, has positive light coke, and the first lens combination forms an intermediary image to object space figure, before this intermediary image is positioned at first piece of catoptron of catoptron group; Catoptron group has negative power, and forms second time intermediary image, for correcting the curvature of field of described object lens and reducing its volume to object space figure; Second lens combination has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends by parallel flat group, and incides the first lens combination; Parallel flat group is used as cover glass; First lens combination has double gauss structure, is to carry out imaging to the input beam of the first lens combination, namely forms first time intermediary image, so that light beam can be blocked by the second catoptron of catoptron group smoothly; On the other hand, the curvature of field that the first lens combination produces described object lens, and the first catoptron of catoptron group, and the curvature of field that the second catoptron of catoptron group produces compensates mutually; Catoptron group is used for that input beam is realized two secondary reflections and turns back, and in described object lens, produces the negative curvature of field in order to realize compensating, thus the lensed bore of institute reduced in described object lens and its physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; Finally, the light beam of object plane by after parallel flat group, the first lens combination, catoptron group and the second lens combination, then by immersion liquid, silicon chip face forms the reduced image of object plane.
Provided by the inventionly a kind ofly use described high-NA submergence projection objective, for deep ultraviolet lighting source.
The present invention compared with prior art has the following advantages:
1, object lens involved in the present invention are divided into four parts and parallel flat group, the first lens combination, catoptron group and the second lens combination, and wherein, the focal power of the first lens combination, catoptron group, the second lens combination three mirror groups is respectively positive and negative, just.This structure well can correct objective lens aberration, particularly the curvature of field, is conducive to improving image quality, and its ripple of object lens of the present invention difference is 1nm, distorts as 1nm.
2, involved in the present invention to described object lens be made up of 25 lens and 2 catoptrons, all lens all use commaterial.Described objective lens arrangement is simple, compact, simplifies object lens manufacture craft, reduces cost of manufacture, improves object lens quality simultaneously.
3, the object lens that the present invention relates to, its numerical aperture is very large, can reach 1.35, if change the immersion liquid of high index of refraction, numerical aperture can be increased to 1.5, operation wavelength is at deep ultraviolet, and objective angular field is larger.Therefore resolving power of lens involved in the present invention is higher, and photoetching efficiency is higher.
4, object lens involved in the present invention are double telecentric structure, object space telecentricity and image space telecentricity all higher, owing to being double telecentric structure, even if therefore mask graph and silicon chip depart from and inclination, also can not change the multiplying power of projection lithography.
Accompanying drawing explanation
Fig. 1 is the structural representation of high-NA submergence projection objective of the present invention;
Fig. 2 is high-NA submergence projection objective optical-modulation transfer function schematic diagram within the scope of the whole audience;
Fig. 3 a is high-NA submergence projection objective curvature of field schematic diagram.
Fig. 3 b is high-NA submergence projection objective distortion schematic diagram.
Drawing reference numeral illustrates:
1-first parallel flat, 2-first positive lens, 3-second positive lens,
4-first meniscus lens, 5-the 3rd positive lens, 6-first negative lens,
7-the 4th positive lens, 8-the 5th positive lens, 9-second meniscus lens,
10-the 6th positive lens, 11-the 3rd meniscus lens, 12-the 4th meniscus lens,
13-the 5th meniscus lens, 14-the 7th positive lens, 15-first catoptron,
16-second catoptron, 17-the 6th meniscus lens, 18-the 7th meniscus lens,
19-second negative lens, 20-the 8th positive lens, 21-the 9th positive lens,
22-the tenth positive lens, 23-the 11 positive lens, 24-the 12 positive lens,
25-the 13 positive lens, 26-the 14 positive lens, 27-the 15 positive lens,
28-image planes.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
As a kind of scheme improving projection objective resolution, the present invention provides a kind of projection objective being suitable for microlithographic projection exposure machine according to a kind of design, it is for being imaged onto the picture plane of this projection objective by the pattern provided in the object plane of this projection objective, this projection objective comprises: multiple optical element, and these optical elements are transparent for the radiation of the operating wave strong point of this projection objective.
As submergence light projection photoetching objective lens, immersion liquid thickness wherein, preferably between 0.1mm and 10mm, because immersion liquid usually shows as high-selenium corn, the less thickness design therefore in above-mentioned thickness range may be favourable.
Fig. 1 is high-NA submergence light projection photoetching objective lens schematic layout pattern of the present invention, uses 26 lens and two panels catoptron altogether, is equipped with parallel flat group G1, the first lens combination G2, catoptron group G3 and the second lens combination G4 successively from light beam incident direction; Wherein: parallel flat group G1 does not have focal power; First lens combination G2 is complicated double gauss structure, has positive light coke, and the first lens combination G2 forms an intermediary image to object space figure, before this intermediary image is positioned at first piece of catoptron 15 of catoptron group G3; Catoptron group G3 has negative power, and forms second time intermediary image, for correcting the curvature of field of described object lens and reducing its volume to object space figure; Second lens combination G4 has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends by parallel flat group G1, and incides the first lens combination G2; Parallel flat group G1 is used as cover glass; First lens combination G2 has double gauss structure, is to carry out imaging to the input beam of the first lens combination G2, namely forms first time intermediary image, so that light beam can be blocked by catoptron group G3 second catoptron 16 smoothly; On the other hand, the curvature of field that the first lens combination G2 produces described object lens, and first catoptron of catoptron group G3, and the curvature of field that second catoptron of catoptron group G3 produces compensates mutually; Catoptron group is used for that input beam is realized two secondary reflections and turns back, and in described object lens, produces the negative curvature of field in order to realize compensating, thus the lensed bore of institute reduced in described object lens and its physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; Finally, the light beam of object plane by after parallel flat group G1, the first lens combination G2, catoptron group G3 and the second lens combination G4, then by immersion liquid, silicon chip face forms the reduced image of object plane.
Parallel flat group G1 comprises one piece of parallel flat;
First lens combination G2 comprises the first positive lens 2, second positive lens 3, first meniscus lens 4, the 3rd positive lens 5, first negative lens (6), the 4th positive lens 7, the 5th positive lens 8, second meniscus lens 9, the 6th positive lens 10, the 3rd meniscus lens 11, the 4th meniscus lens 12, the 5th meniscus lens 13, the 7th positive lens 14; In the first lens combination G2, described lens are independently installed, and are arranged in respective picture frame respectively, and the picture frame of described lens is connected with the whole lens barrel of described object lens.Further, the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
Catoptron group G3 comprises the first catoptron 15, second catoptron 16; First catoptron 15 and the second catoptron 16 are on same optical axis, and that is, the line of the vertex curvature radius centre of sphere of the first catoptron 15 and the second catoptron 16 overlaps with described objective lens optical axis; But this high-NA submergence projection objective only use the first catoptron 15 and the second catoptron 16 from shaft portion, to make described object lens not exist to block and be in the light; First reflect at the first catoptron 15 from the first lens combination G2 light beam out, the light beam after reflection reflects through the second catoptron 16 again, and light beam is walked along original direction.
Second lens combination G4 comprises the 6th meniscus lens 17, the 7th meniscus lens 18, second negative lens 19, the 8th positive lens 20, the 9th positive lens 21, the tenth positive lens the 22, the 11 positive lens the 23, the 12 positive lens the 24, the 13 positive lens the 25, the 14 positive lens the 26, the 15 positive lens 27,15 positive lens 27 is plano-convex lenss, plano-convex lens is last block lens of described object lens, and the last one side of described object lens is plane; The aperture diaphragm of described object lens is between the 12 positive lens the 24 and the 13 positive lens 25; In lens combination G4, each lens are independently installed, and are arranged in respective picture frame respectively, and the picture frame of described lens is connected with the whole lens barrel of described object lens.The mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.First lens combination G2 has positive light coke; Catoptron group G3 has negative power; Second lens combination G4 has positive light coke.Image planes 28 are surfaces, silicon chip place.
Described parallel flat group (G1), the first lens combination (G2), the second lens combination (G4) adopt fused quartz glass.The refractive index of described fused quartz glass is 1.560326.
The present invention also provides a kind of and uses described high-NA submergence projection objective, for deep ultraviolet lighting source.
27 elements that high-NA submergence projection objective of the present invention has and be all in same optical axis, utilize the mechanical component of lens housing to fix relative position between them.Present invention uses fused quartz (during described object lens centre wavelength, refractive index is 1.560326) as lens material.
The course of work of high-NA submergence light projection photoetching objective lens of the present invention is: parallel flat group G1 precontract 43 millimeters place object plane and mask being placed in described object lens, each field of view center light vertical incidence parallel flat group G1, mask imaging, successively through the first lens combination G2, catoptron group G3, the second lens combination G4, is finally contracted to 1/4th and is imaged on image planes and silicon chip by light.Each field of view center light vertical incidence image planes, this projection objective is object space and image space double telecentric structure.
For meeting structural parameters requirement, and improve picture element further, Continuous optimization is carried out to object lens, the radius on each surface, thickness, interval after optimizing, and asphericity coefficient changes, the concrete Optimized Measures of the present embodiment is Applied Optics Design software construction majorized function, and adds aberration and structural limitations parameter, and successive optimization is existing result.
The present embodiment is realized by following technical measures: lighting source is ArF laser instrument, and the numerical aperture of light projection photoetching objective lens is 1.35, and distortion is about 1nm, and root mean square wave aberration is about 1nm, and described object lens reduction magnification is 4 times.
" sequence number " in following table arranges from light end, and the beam incident surface as the first parallel flat 1 is sequence number S1, and beam exit face is sequence number S2, and other minute surface sequence number number by that analogy; " radius " provides the spherical radius corresponding to each corrugated respectively, for aspheric surface, is its fixed point spherical radius; " spacing " provides the centre distance along optical axis between adjacent two surfaces, if two surfaces belong to same eyeglass, then spacing represents the thickness of this eyeglass.The design parameter of lens combination is as follows:
| Sequence number | Radius | Spacing | Material |
| Object plane | ∞ | 43.20 | |
| S1 | ∞ | 19.07 | SiO 2 |
| S2 | ∞ | 1.35 | |
| S3 | 341.90 | 31.70 | SiO 2 |
| S4(ASP) | -1470.50 | 3.34 | |
| S5 | 176.72 | 59.85 | SiO 2 |
| S6(ASP) | -625.99 | 3.87 | |
| S7(ASP) | -440.58 | 19.40 | SiO 2 |
| S8 | -684.29 | 1.00 | |
| S9 | 1962.02 | 22.58 | SiO 2 |
| S10(ASP) | -488.85 | 7.11 | |
| S11 | -266.59 | 17.28 | SiO 2 |
| S12(ASP) | 186.97 | 4.45 | |
| S13 | 228.14 | 46.73 | SiO 2 |
| S14(ASP) | -269.23 | 1.00 | |
| S15 | 93.65 | 32.13 | SiO 2 |
| S16(ASP) | 558.93 | 15.00 | |
| S17 | -172.37 | 18.93 | SiO 2 |
| S18(ASP) | -242.70 | 2.14 | |
| S19 | 560.38 | 29.76 | SiO 2 |
| S20(ASP) | -134.23 | 1.41 | |
| S21(ASP) | -184.97 | 24.61 | SiO 2 |
| S22 | -186.36 | 15.02 | |
| S23(ASP) | -95.37 | 24.37 | SiO 2 |
| S24 | -119.79 | 22.72 | |
| S25(ASP) | -76.53 | 38.92 | SiO 2 |
| S26 | -138.07 | 15.38 | |
| S27(ASP) | -307.87 | 68.53 | SiO 2 |
| S28 | -139.86 | 323.17 | |
| S29(ASP) | -246.04 | -266.51 | Mirror |
| S30(ASP) | 198.05 | 317.63 | Mirror |
| S31 | 328.75 | 18.36 | SiO 2 |
| S32(ASP) | 370.51 | 30.52 | |
| S33 | 213.13 | 27.65 | SiO 2 |
| S34(ASP) | 116.14 | 48.12 | |
| S35 | -2580.84 | 29.81 | SiO 2 |
| S36(ASP) | 224.87 | 27.26 | |
| S37 | -3509.94 | 49.60 | SiO 2 |
| S38 | -289.19 | 1.00 | |
| STO | -1199.37 | 52.10 | SiO 2 |
| S40 | -355.51 | 1.00 | |
| S41 | -3138.22 | 35.40 | SiO 2 |
| S42 | -1158.92 | 9.59 | |
| S43 | -688.99 | 79.55 | SiO 2 |
| S44(ASP) | -264.45 | 1.00 | |
| S45 | 265.30 | 89.62 | SiO 2 |
| S46 | -15405.57 | 1.00 | |
| Stop | 0.00 | 1.00 | |
| S48 | 197.15 | 49.40 | SiO 2 |
| S49(ASP) | 240.42 | 1.00 | |
| S50 | 133.74 | 74.25 | SiO 2 |
| S51(ASP) | 543.90 | 1.00 | |
| S52 | 59.47 | 60.76 | SiO 2 |
| S53 | ∞ | 2.00 | |
| Image planes | ∞ | 0 |
| Coefficient | S32 |
| K | 0 |
| C1 | -3.25206E-08 |
| C2 | 3.86752E-12 |
| C3 | 4.36996E-16 |
| C4 | -1.67093E-19 |
| C5 | 2.93919E-23 |
| C6 | -3.26387E-27 |
| C7 | 2.31398E-31 |
| C8 | -9.47297E-36 |
| C9 | 1.70693E-40 |
The design parameter of each element is in practical operation above, can adjust to meet different systematic parameter requirements.
Following three kinds of evaluation meanses are adopted to test and assess to the deep ultraviolet high-NA immersion lithographic object lens that the present embodiment makes:
1, optical-modulation transfer function evaluation
Fig. 2 is high-NA submergence projection objective optical-modulation transfer function schematic diagram within the scope of the whole audience, and optical-modulation transfer function (MTF) is the direct evaluation determining resolving power of lens and depth of focus.Diagram horizontal ordinate be spatial frequency, unit be line right/millimeter, ordinate is modulating function, and described object lens MTF reaches diffraction limit.Deep ultraviolet high-NA immersion lithographic object lens optical-modulation transfer function (MTF) figure within the scope of the whole audience described in the present embodiment as shown in Figure 2 shows, during MTF ≈ 40%, described resolving power of lens reaches 7000 lines right/millimeter, cutoff frequency be 13760 lines right/millimeter.
2, astigmatism and the curvature of field and distortion
Fig. 3 a is light projection photoetching objective lens curvature of field intention, and horizontal ordinate is defocusing amount, and unit is millimeter, and ordinate is object height; Fig. 3 b is light projection photoetching objective lens distortion schematic diagram, and horizontal ordinate distortion percentage, ordinate is object height.As can be seen from the figure, described object lens focal plane shift is all less than 0.2 μm in the sagitta of arc and meridian ellipse, represent by the difference of maximum deviation value and minimum deviation value and always depart from, namely Ftot=Fmax-Fmin (namely, focal plane shift=visual field maximum offset-visual field minimum offset), its maximal value Ftot=80nm.Distort with visual field change, marginal distortion maximum is 4.2e-8, therefore full filed maximum distortion is less than 1nm.
3, root mean square wave aberration
Lithographic objective designed by the present embodiment take barycenter as the minimum value of the monochromatic root mean square wave aberration of reference be 0.0053 (F0.57, i.e. 0.57 visual field place) is 1nm, and maximal value is 0.0083 λ (F0.79) for 1.6nm, λ are wavelength.
The present invention, by increasing eyeglass, selects part aspheric surface spherical lens, optimizes the radius of each lens, thickness, and the parameter such as asphericity coefficient, obtains picture element excellent, is easy to the new object lens manufactured.Described objective lens arrangement is compact, and for double telecentric structure and telecentricity is high, picture element is excellent.
Those of ordinary skill in the art will be appreciated that, above embodiment is only used to the present invention is described, and be not used as limitation of the invention, as long as in spirit of the present invention, change the above embodiment, modification all will drop in the scope of claims of the present invention.
Claims (7)
1. a high-NA submergence projection objective, is characterized in that: described submergence projection objective comprises: be equipped with parallel flat group, the first lens combination, catoptron group and the second lens combination successively from light beam incident direction; Wherein: parallel flat group does not have focal power; First lens combination is complicated double gauss structure, has positive light coke, and the first lens combination forms an intermediary image to object space figure, before this intermediary image is positioned at first piece of catoptron of catoptron group; Catoptron group has negative power, and forms second time intermediary image, for correcting the curvature of field of described object lens and reducing its volume to object space figure; Second lens combination has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends by parallel flat group, and incides the first lens combination; Parallel flat group is used as cover glass; First lens combination has double gauss structure, is to carry out imaging to the input beam of the first lens combination, namely forms first time intermediary image, so that light beam can be blocked by the second catoptron of catoptron group smoothly; On the other hand, the curvature of field that the first lens combination produces described object lens, and the first catoptron of catoptron group, and the curvature of field that the second catoptron of catoptron group produces compensates mutually; Catoptron group is used for that input beam is realized two secondary reflections and turns back, and in described object lens, produces the negative curvature of field in order to realize compensating, thus the lensed bore of institute reduced in described object lens and its physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; Finally, the light beam of object plane by after parallel flat group, the first lens combination, catoptron group and the second lens combination, then by immersion liquid, silicon chip face forms the reduced image of object plane; Described first lens combination comprises the first positive lens, the second positive lens, the first meniscus lens, the 3rd positive lens, the first negative lens, the 4th positive lens, the 5th positive lens, the second meniscus lens, the 6th positive lens, the 3rd meniscus lens, the 4th meniscus lens, the 5th meniscus lens, the 7th positive lens; In the first lens combination, described lens are independently installed, and are arranged in respective picture frame respectively, and the picture frame of described lens is connected with the whole lens barrel of described object lens, and the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
2. high-NA submergence projection objective according to claim 1, is characterized in that, parallel flat group comprises a parallel flat.
3. high-NA submergence projection objective according to claim 1, is characterized in that, catoptron group comprises the first catoptron, the second catoptron; First catoptron and the second catoptron are on same optical axis, and that is, the line of the vertex curvature radius centre of sphere of the first catoptron and the second catoptron overlaps with described objective lens optical axis; But this high-NA submergence projection objective only use the first catoptron and the second catoptron from shaft portion, to make described object lens not exist to block and be in the light; First reflect at the first catoptron from the first lens combination light beam out, the light beam after reflection through the second catoptron reflection, makes light beam walk along original direction again.
4. high-NA submergence projection objective according to claim 1, it is characterized in that, the second lens combination comprises the 6th meniscus lens, the 7th meniscus lens, the second negative lens, the 8th positive lens, the 9th positive lens, the tenth positive lens, the 11 positive lens, the 12 positive lens, the 13 positive lens, the 14 positive lens, the 15 positive lens; 15 positive lens is plano-convex lens, and plano-convex lens is last block lens of described object lens, and the last one side of described object lens is plane; The aperture diaphragm of described object lens is between the 12 positive lens and the 13 positive lens; In lens combination, each lens are independently installed, and are arranged in respective picture frame respectively, and the picture frame of described lens is connected with the whole lens barrel of described object lens, and the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
5. high-NA submergence projection objective according to claim 1, is characterized in that, described parallel flat group, the first lens combination, the second lens combination adopt fused quartz glass.
6. high-NA submergence projection objective according to claim 5, is characterized in that, the refractive index of described fused quartz glass is 1.560326.
7. the high-NA submergence projection objective as described in any one in claim 1-6, for deep ultraviolet lighting source.
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|---|---|---|---|
| CN201310325062.5A CN103353669B (en) | 2013-07-30 | 2013-07-30 | High numerical aperture immersion projection objective |
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| CN201310325062.5A CN103353669B (en) | 2013-07-30 | 2013-07-30 | High numerical aperture immersion projection objective |
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| CN103353669A CN103353669A (en) | 2013-10-16 |
| CN103353669B true CN103353669B (en) | 2015-07-15 |
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| CN103885159B (en) * | 2014-04-17 | 2016-03-30 | 中国科学院光电技术研究所 | High NA projection objective lens |
| CN104111515B (en) * | 2014-07-11 | 2016-09-28 | 中国科学院光电技术研究所 | Large-numerical-aperture immersion type projection objective lens |
| CN105807410B (en) * | 2014-12-31 | 2018-11-09 | 上海微电子装备（集团）股份有限公司 | A kind of refraction-reflection projection objective based on high-NA |
| CN105204139B (en) * | 2015-09-18 | 2017-12-15 | 苏州莱能士光电科技股份有限公司 | A kind of big angle of visual field smart home optical system of high-resolution large aperture |
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| CN1894632A (en) * | 2003-12-15 | 2007-01-10 | 卡尔蔡司Smt股份公司 | Projection objective having a high aperture and a planar end surface |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1894632A (en) * | 2003-12-15 | 2007-01-10 | 卡尔蔡司Smt股份公司 | Projection objective having a high aperture and a planar end surface |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
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