CN1894632A - Projection objective having a high aperture and a planar end surface - Google Patents

Abstract

age plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n = 1.6 at the operating wavelength.

Description

The projection objective that high aperture and planar end surface are arranged

The background of invention

Invention field

The present invention relates to be used for the projection objective on the image surface that projection objective is provided at the pattern that provides on the object plane of projection objective.Projection objective can be used in the microlithographic projection exposure machine.The present invention be more particularly directed to be used for the exposure machine that those are designed to the semiconductor structure of submergence operation, that is to say, its image-side numerical aperture NA greater than 1.0 pore diameter range among.

Description of Related Art

Under the situation of dwindling optical imagery of projection lithography particularly, the refractive index restriction of the medium around image-side numerical aperture NA is subjected in the image space.In immersion lithographic, possible in theory numerical aperture NA is limited by the refractive index of submergence medium.The submergence medium can be liquid or solids.Under the latter's situation, be also referred to as solid immersion.

Yet, because actual cause, the refractive index of the medium (that is, approaching the medium of image most) that the aperture is should be not approaching arbitrarily not last.Because at this moment angle of propagation becomes very big with respect to optical axis.Verified, about 95% of the refractive index of last above image-side significantly medium aperture does not gear to actual circumstances.This is corresponding to the angle of propagation about 72 ° with respect to optical axis.For 193nm, this is at Yi Shui (n _H2O=1.43) as under the situation of submergence medium corresponding to NA=1.35.

The liquid that is higher than the refractive index of last lens material for refractive index, or under the situation of solid immersion, if the design of last end face (exit face of projection objective) be the plane or slight curvature only, then the material of last lens unit (that is the last optical unit of the projection objective of adjacent image) plays the effect of restriction.Planar design is being favourable under the following situation for example: for the characteristic of the fluid of the submergence medium between wafer that will be exposed and last object lens face and for they cleaning and measure distance between wafer and object lens.For solid immersion, be the wafer on plane equally particularly in order to expose, last end face must be planar design,

For DUV (operation wavelength of 248nm or 193nm), the material that is generally used for last lens is to have refractive index n _SiO2=1.56 fused quartz (synthetic quartz glass, SiO ₂) or have refractive index n _CaF2=1.50 CaF ₂The synthetic quartz glass material also is called " quartz " below for short.Because the high radiation load in last lens unit particularly preferably uses calcium fluoride as last lens at 193nm, because synthetic quartz glass will be owing to radiation load damages for a long time.The numerical aperture that this causes reaching is about 1.425 (n=1.5 95%).If accept the shortcoming of radiation damage, then quartz glass still allow 1.48 (193nm corresponding to the refractive index of quartz about 95%) numerical aperture.This pass is similar when tying up to 248nm.

Brief summary of the invention

An object of the present invention is to provide high aperture projection objective, it prevents to have such as the submergence medium of water or has such as fused quartz and CaF ₂The shortcoming of traditional design of lens material.Another object of the present invention provide size with appropriateness and material consumption, be suitable for the image-side immersion lithographic, numerical aperture is at least the projection objective of NA=1.35.

Solution as this and other purpose, according to a formula, the invention provides a kind of being used for the projection objective on the image surface that the projection objective that is suitable for the microlithographic projection exposure machine is provided at the pattern that provides on the object plane of projection objective, comprising: to the radiation in the projection objective operation wavelength is transparent a plurality of optical units; Wherein at least one optical unit is the high index of refraction optical unit of being made by the high-index material with refractive index n on operation wavelength 〉=1.6.

An embodiment comprises the radiation proof lithographic objective with the image-side numerical aperture that is preferably more than or equals NA=1.35, and for it, last at least lens unit comprises high-index material (refractive index n＞1.6, particularly n＞1.8).Thereby under the situation of the minification of (absolute value) of the convention of photoetching 4: 1 (| β |=0.25), object side (mask side) numerical aperture is NA _Obj〉=0.33, NA preferably _Obj〉=0.36.

Exemplary embodiment below by using for 193nm illustrates in greater detail various aspect of the present invention.In example, the material that is used for last lens unit or its parts is sapphire (Al ₂O ₃), and all the other lens are made by fused quartz.Yet these examples can be transferred to other high refractive index lens material and other wavelength.For example, for 248nm, might use germanium dioxide (GeO ₂) as the material that is used for last lens or its parts.Compare with sapphire, this material has advantage: it is not birefringent.Yet this material no longer is transparent at 193nm.

Under liquid-immersed situation,, then can reach NA＞1.35 if use immersion liquid with refractive index higher than water.In some example application, use cyclohexane (refractive index n=1.556).

Has the current reality of being considered to of the submergence medium of n＞1.6.

If the thickness that use immersion liquid, then high refractive index liquid--that is to say immersion liquid--preferably can be 0.1 and 10mm between.Less thickness in this scope can be favourable, because high index of refraction submergence medium also present higher absorption usually.

The above characteristic with other singly can in the claims and can not seen in explanation and accompanying drawing, wherein each characteristic can be individually or is divided and be used as embodiments of the invention in combination, and can express embodiment favourable and can patent in other field individually.

The accompanying drawing summary

Fig. 1 is the longitdinal cross-section diagram according to first embodiment of Catadioptric projection objective of the present invention;

Fig. 2 is the longitdinal cross-section diagram according to second embodiment of Catadioptric projection objective of the present invention;

Fig. 3 is the longitdinal cross-section diagram according to the 3rd embodiment of Catadioptric projection objective of the present invention;

Fig. 4 is the longitdinal cross-section diagram according to the 4th embodiment of Catadioptric projection objective of the present invention;

Fig. 5 is the longitdinal cross-section diagram according to the 5th embodiment of Catadioptric projection objective of the present invention.

Preferred embodiment describes in detail

In the explanation of following the preferred embodiments of the present invention, term " optical axis " is meant straight line or a series of straight-line segment that passes involved optical unit center of surface.Optical axis can be folding by folding mirror (deflection mirror).Under the situation of these examples that here provide, related object is the mask (reticle) that is loaded with the pattern of integrated circuit, or certain other pattern, for example grating pattern.In these examples that here provide, the image of object is projected to the wafer that is used as substrate, is applying one deck photoresists on it, though the substrate of other type such as the element of LCD or be used for the substrate of grating, also is feasible.

Be provided at form under the occasion of technical manual of open design as shown in the figure, form is represented by the numeral identical with each accompanying drawing.

Fig. 1 show be designed to about 193nm UV operation wavelength, according to the longitdinal cross-section diagram of first embodiment of Catadioptric projection objective 100 of the present invention.It is designed to the ratio of image to dwindle of the pattern on the master (or mask) that is arranged at object plane OP for example projected to image surface IP at 4: 1, and accurately creates two real intermediate image IMI1 and IMI2 simultaneously.The first refractive objective lens part ROP1 is designed to the pattern on the object plane is imaged as the first intermediate image IMI1, second reflective (pure reflection) object lens part COP2 is imaged as the second intermediate image IMI2 to the first intermediate image IMI1 with the magnification that approached 1: 1, and third reflect object lens part ROP3 is imaged onto image surface to the second intermediate image IMI2 with very high minification.The second reflective object lens part COP2 comprises the first concave mirror CM1 that has in the face of the concave reflection minute surface of object side, and has the second concave mirror CM2 in the face of the concave reflection minute surface of image-side.Mirror surface is continuous or does not rupture that promptly they do not have hole or hole.The mirror surface that faces one another has been stipulated space between a mirror, i.e. the space that curved surface surrounded of being stipulated by the concave reflection minute surface.Two intermediate image IMI1, IMI2 are positioned at space between mirror on how much, paraxial at least intermediate image almost is in the centre away from this space of mirror surface.

One " curved surface " or " flexure plane " of each mirror surface regulation of concave mirror, it is the mathematics surface that extends to beyond the edge of physics mirror surface and comprise mirror surface.First and second concave mirrors are the parts with rotation symmetroid of public rotation axes of symmetry.

System 100 is rotational symmetric, and has one for all refraction and the common direct light axle AX in catoptrics unit.There is not folding mirror.Concave mirror has little diameter, allow them to be close together and and the intermediate image between them quite approaching.Concave mirror is building with irradiated from the axle segmentation as the rotational symmetry face.Light beam transmits by not fogging towards the edge of the concave mirror of optical axis.

That Catadioptric projection objective with this general structure is for example submitted on January 14th, 2004, sequence number 60/536,248; In U.S. Provisional Patent Application that submit to, sequence number 60/587,504 on July 14th, 2004; And be disclosed in the application of the later expansion of submitting on October 13rd, 2004.The content of these applications is integrated into the application, for your guidance.The characteristic of a characterization of such Catadioptric projection objective is: between the object plane and first intermediate image, between first and second intermediate image and on formation each perforation hole surface (on principal ray and optical axis intersecting axis position) between second intermediate image and the image surface, and all concave mirrors are arranged to optically away from the perforation hole surface, especially on the position of principal ray height above the marginal ray height of imaging processing process of imaging processing process.And, at least the first intermediate image space between the mirror that is located on how much between first concave mirror and second concave mirror preferably.Preferably, first intermediate image and second intermediate image are located on how much between mirror between the concave mirror in the space.

The illustrative example that describes below is shared these characteristics, and they allow to carry out with the optical system of the optical material structure of relatively small amount the immersion lithographic of numerical aperture NA＞1.

Fig. 1 shows the 193nm lithographic objective as first exemplary embodiment, has sapphire lens and cyclohexane give and is the submergence medium and combine with the image-side numerical aperture of NA=1.45.The sapphire lens are the last optical unit LOE that approach image surface most.The image-side operating distance is 1mm.Catadioptric design has two concave mirrors, and be mainly used in chromaticity correction and Petzval and proofread and correct, and an intermediate image, be in this upstream and downstream respectively to catoptron.Yet these intermediate images are not corrected fully, and are mainly used in how much restrictions of design and are used to isolate two beam paths of advancing and advancing from catoptron at the mirror reflection back that is reflected to catoptron.Picture field (on wafer) is a rectangle.Outfield radius (on the wafer limit) is 15.5mm, and the internal field radius is 4.65mm.Such result is the rectangular field of 26 * 3.8mm.

In first exemplary embodiment, aperture diaphragm (aperture diaphragm AS, system aperture) is arranged at the first refractive objective lens part ROP1.This is favourable, on the one hand in order to make less variable aperture diaphragm, and on the other hand, when the diaphragm of reduced bore, mainly protects later object lens parts (seeing from object plane (mask face)) to avoid useless and the radiation load that disturbs.Caudacoria in image-side object lens part ROP3 is unilateral, can place the aperture location of aperture therein, is positioned in the zone between the lens LMD of maximum gauge and the image surface IP on the converging beam path.

A contraction section (contraction of light beam and lens diameter) is formed among the local object lens ROP1 that reflects before the object side, and this contraction section is mainly used in correcting image curvature of field face (Petzval summation).Aperture diaphragm AS is arranged at contraction section.

CaF ₂It is not preferred being used for last lens, because this need be not more than 1.425 (CaF as far as possible ₂Refractive index about 95%) numerical aperture.In this example, sapphire (Al ₂O ₃) be used as high-index material among the last lens unit LOE at 193mm.In all embodiment as shown in the figure, the optical unit of being made by sapphire draws hacures becomes grey, so that reference.

The birefringence that takes place when using sapphire is by being separated into last lens two lens unit LOE1 and LOE2 and rotating two lens units relative to each other and compensated to a great extent around optical axis.In this case, separate interface S1 (surface of contact of two lens unit LOE1 and LOE2) and preferably be bent, so that two lens units have similar refracting power.Alternatively, might use the Unit of being made by sapphire second that is arranged near near position of object lens (for example the intermediate image or object plane) for compensation, it plays similar effect aspect optics.In this example, last sapphire lens LOE is separated into two lens unit LOE1 and the LOE2 that in fact plays same function.The preceding radius surface of sapphire lens LOE (promptly, the radius of light approaching side) is designed such that the aperture light beam, promptly the center of the light beam trend picture field of advancing to image with the circumference (parimeter) of assembling light beam is passed interface and is actually aclastic, that is to say, in fact vertically project interface (in fact lens radius is concentric with the point of crossing of image surface and optical axis).At the radius of cutting apart interface SI between two lens units of this sapphire split lens (split lens) is more smooth (distance between image surface of wafer be multiply by and can be placed on it in radius＞1.3).

For example in by the applicant's patented claim DE 101 23 725 A1 (for example corresponding to US 2004/0190151 A1) or WO 03/077007 A2, the describing in more detail by the relative rotation of the unit made by birefringent material to the birefringence effect redeeming.Have be designed to the last lens of cutting open made by birefringent material (calcium fluoride), with the Catadioptric projection objective of the hithermost last lens unit of image surface be that 722B is known from US 6,717.

The technical manual of the design of Fig. 1 is summarized in table 1.The row on the left side are listed plane of refraction, reflecting surface or the number of the face of appointment in addition, secondary series is listed the radius r [mm] of this face, the 3rd be listed between this face and the next face apart from d[mm], it is called as the parameter of optical unit " thickness ", the 4th lists and is used to make the material that optical unit adopts, and the 5th refractive index of listing the material that the manufacturing that is used for it adopts.The 6th lists available on the optics of optics, semidiameter [mm] clearly.On this table, the radius value r=0 that provides for plane with infinitely great radius.

Under the situation of this certain embodiments, 15 faces are faces of aspheric surface.Table 1A lists for these aspheric relevant data, and thus, the curved arrow of their surface number can utilize following formula to calculate as the function of height h:

P (h)=[((1/r) h ²(1-(1+K) (1/r) for)/(1+SQRT ²h ²)]+C1h ⁴+ C2h ⁶+ ...., wherein the reciprocal value of radius (1/r) is the surface of the being discussed curvature at surperficial top, and h is that thereon a point is from the distance of optical axis.Therefore curvedly vow that p (h) representative is along the z direction--promptly along optical axis--measurement, this distance from the top on the surface of being discussed.Constant K, C1, C2 or the like lists on table 1A.

Similarly, the technical manual of following embodiment is for the table 2 of Fig. 2,2A; For the table 3 of Fig. 3,3A; For the table 4 of Fig. 4,4A; With table 5, represent in a similar fashion among the 5A for Fig. 5.

According to the projection objective on Fig. 2 200, the last optical unit LOE on image surface has total shape of planar convex lens.Lens are divided into two optical unit LOE1 and LOE2 again, and they are cut apart interface S1 and contact with each other along the plane.Especially, has the positive curvature radius of entering surface and be thereafter that the quartz glass lens LOE1 on plane is bonded on (or two) planopaallel plate LOE2 who is made by sapphire.This produces the numerical value be not higher than NA possible in the quartz glass, but it has such advantage, and promptly the angle of propagation of light beam is reduced in last objection lens portion office, and there the aperture because the medium of high index of refraction but maximum.When considering that this is favourable when the reflection loss on the possible protective seam and scattered light effect at interface with on last end face, these scattered light effects are for those otherwise will be that very large propagation angle will constitute problem.Like this, Zui Da angle only takes place on the bonding surface between the quartz lens LOE1 and the first high index of refraction planopaallel plate LOE2.This bonding surface (wherein adjacent optical unit is by bonding and adhered to one another surface of contact) is protected to be avoided polluting and damaging, and available have the also responsive coating of environmental impact is designed.If two planopaallel plates are used for forming parallel plane high index of refraction element LOE2, then two planopaallel plates being made by sapphire can rotate relatively around optical axis, and the compensation S in the x and y direction and the birefringence effect of P polarization ideally actually, this is at first to need for making the semiconductor structure imaging.

Yet, because its lower refractive index, quartz lens LOE1 has following effect here, even--because its less concentration effect--is for the image-side numerical aperture of the projection objective of limited total length, need very large lens diameter, and in fact these diameters not so big yet.In second exemplary embodiment (Fig. 2), the aperture is NA=1.35, but lens diameter bigger compared with among first embodiment.Here, lens diameter has surpassed 143mm, therefore is actually 212 times of numerical aperture, and only reaches 200 times numerical aperture in first embodiment.Particularly, in the exemplary embodiment of Fig. 2, maximum half lens diameter under 143mm even greater than the catoptron semidiameter under about 136mm.

Diameter for the maximum lens unit that minimizes projection objective, and minimize birefringent effect simultaneously, in the alternative embodiment (projection objective 300) of the design example with NA=1.45, last lens unit LOE comprises the entering surface of thin sapphire lens LOE1 with positive refracting power, spherical curve and is bonded to appear outside the plane on the thin quartz glass plate LOE2 (exemplary embodiment 3 of Fig. 3).Provide the outer parallel plane quartz glass plate of appearing of object lens can take place then owing to exchanged after the damage that radiation load causes.Therefore bonding quartz plate also is used as tradable protective seam, and protection sapphire lens LOE1 avoids pollution and/or scratch or destruction.It is immersion fluid that embodiment 3 adapts to cyclohexane give, and it has and is used for and the similar refractive index (n=1.566) of the refractive index (n=1.560) of the fused quartz of the contacted plate of immersion fluid.

Under these situations, NA is limited by the refractive index of quartz glass.Yet, compare with design with last lens of making by pure quartz glass, in the end the result of the upstream of lens is less beam angles, so also be the lower sensitivity (to the susceptibility of fabrication tolerance) of the less diameter and the last lens unit of total object lens.In embodiment 3, maximum lens diameter is about 186 times of numerical aperture now under 135mm.

Certainly, the present invention also can be used for the object lens of low numerical aperture, so that reduce the diameter of former projection objective significantly.This advantageously influences the price of projection objective, because quantity of material can be reduced significantly.

The 4th exemplary embodiment (Fig. 4) shows the lithographic objective 400 be used for 193nm, it have by sapphire make but the last lens and the Yi Shui (n of monolithic _H2O=1.43) as the submergence medium, NA=1.35 and operating distance are 1mm.Monolithic (parts, ameristic) top surface (entering surface) of sapphire lens LOE is aspheric surface, and in the zone of the zone of the largest beam diameter of aperture diaphragm AS in the 3rd object lens part ROP3 that is in the biconvex lens LMD with maximum gauge and the collected radiation between the image surface IP in the aft section of image surface refractive objective lens part ROP3.Maximum lens diameter is limited to 190 times less than numerical aperture.

By means of the high-index material of last at least lens unit, even the numerical aperture higher than NA=1.45 also is possible.

The 5th exemplary embodiment 500 (Fig. 5) be designed for NA=1.6 have a plane convex surface sapphire lens (n _Sapphire=1.92) solid immersion (photoetching of contact object lens).Therefore, even also be feasible on principle up to the numerical aperture of NA＞1.8.In this example, be 15.53mm at the external field radius of wafer side, and the fields inside radius is 5.5mm, that is to say that the size of rectangular field is 26 * 3mm.

Since have NA＞0.52 the high aperture light beam in aperture at plane exit face place when when sapphire is transferred to air, standing total reflection, so must realize operating distance for solid immersion, so that the service wear ripple makes wafer exposure effectively less than wavelength.This can be achieved like this: wafer is placed in the end near the lens surface for example 100nm (≈ λ/2) is exposed consistently in a vacuum.

Yet, because the through-put power by evanescent field (evanescent field) is pressed index decreased with distance, the minor alteration of distance also will cause inhomogeneity surging, be favourable so wafer is contacted with last end face (exit face) direct mechanical of projection objective.In order to expose, wafer can be adhered on the last planar lens face (surface of contact CS), so that reach the Mechanical Contact between the exit face of projection objective and the interior coupling surface that is associated with substrate.The exposure method of substep scan pattern or splicing is preferred in this case, that is to say, the zone bigger than picture field is exposed in each step respectively, and reticle also correspondingly is adjusted so that aim at, rather than as former convention to the wafer adjustment.Because the imaging of having dwindled is adjusted master and can be used than adjusting the lower precision of wafer, this also is favourable.The follow-up level of the semiconductor structure of exposure area adjacent to each other (target area) or step of exposure subsequently thus by reticle laterally and axially-movable and rotation obtain good overlappingly, with the overlapping accuracy that is better than several nanometers semiconductor structure is exposed to the wafer of also defective applying thus.For example the alignment mark of master also aligns with the alignment mark that has exposed on wafer for this reason

Wafer takes out from last surface and preferably carries out in a vacuum.If desired, place a thin layer (film/membrane sheet) between wafer and last planar lens face, it can for example exchanged after each step of exposure.This diaphragm for example also can keep being engaged with on the wafer and help separating, and is used as the protective seam for last planar lens face especially.The latter can randomly be protected by thin protective layer in addition.

Under the situation of solid immersion, because the situation that imaging is disturbed, the fringe region at last lens face between exposure period can produce high-intensity standing wave.So, when wafer because how much bonding out of true once in a while ground when being placed on certain scope of several microns, for structure repeated exposure on wafer, can be compensated it by using master to adjust, being burnt on the last lens so that prevent systematic structure, is more favourable.

All exemplary embodiments discussed above are to have just in time two concave mirrors and the Catadioptric projection objective of two intermediate images just in time, and wherein all optical units are aimed at along folding straight line optical axis.The projection objective that is selected to illustrate the unified fundamental type of preferred variation of the present invention plan to help explanation some become substantially example and with different relevant technique effect and the advantages of change example of the present invention.Yet the illustrative of the lens unit of being made by high-index material (for example n 〉=1.6 or even n 〉=1.8) in the projection objective of the operation wavelength in being specifically used for deep UV (DUV) scope is used and is not limited to this projection objective.The present invention also be directed into pure refraction projection object lens.In these types, the last lens unit that approaches image surface most usually is a plano-convex lens, and it for example can be designed by each the rule of last optical unit LOE above-mentioned, that be used for first to the 5th embodiment.Some examples for example have a sequence number 10/931 the applicant, 051 (also seeing WO 03/075049 A), 10/931,062 (also seeing US 2004/0004757 A1), 10/379,809 (also seeing US 2004/0004757A1), in the U.S. Patent application or in WO 03/077036A, provide.The disclosure of these documents is being hereby incorporated by reference.

Similarly, the present invention may be embodied as the Catadioptric projection objective that only has a concave mirror, or is embodied as Catadioptric projection objective in a device that is different from accompanying drawing with two above concave mirrors or embodiment, that have two concave mirrors.In addition, use of the present invention can irrespectively be implemented with whether there is folding mirror in optical design.The example of reflected refraction system is in the U.S. Patent application of the applicant with sequence number 60/511,673,10/743,623,60/530,622,60/560,267 or describe in US2002/0012100.The disclosure of these documents is being hereby incorporated by reference.Other example shows in US 2003/0011755 A1 and relevant application.

Similarly, the present invention may be implemented as and not have projection objective intermediate image or that have the intermediate image of any proper number on request.

Table 1

Embodiment 1:NA=1.45, β=-0.25, λ=193.4nm

The surface	Radius	Thickness	Material	Refractive index	Semidiameter
						0	0.000000	37.647680			62.000
1	200.438805	20.912608	SIO2HL	1.56018811	83.110
						2	747.538013	7.881173			83.845
3	317.250503	20.945704	SIO2HL	1.56018811	86.831
						4	22587.222465	11.951766			86.988
5	-354.957551	49.505975	SIO2HL	1.56018811	87.016
						6	-278.404969	31.885410			92.050
7	133.981210	32.856595	SIO2HL	1.56018811	92.150
						8	186.155059	11.833855			85.480
9	260.034334	38.111988	SIO2HL	1.56018811	85.440
						10	-248.127931	0.945803			84.087
11	97.319012	29.863172	SIO2HL	1.56018811	63.308
						12	247.011352	15.182258			54.518
13	0.000000	13.667911			46.858
						14	-118.535589	9.039902	SIO2HL	1.56018811	47.472
15	-136.528381	10.289540			49.929
						16	-117.640924	9.240335	SIO2HL	1.56018811	50.901
17	-267.170322	7.604882			57.478
						18	-147.424814	27.658175	SIO2HL	1.56018811	58.338
19	-83.904407	29.670597			63.295
						20	-79.022234	16.329258	SIO2HL	1.56018811	66.670
21	-99.429984	38.001255			76.192
						22	-111.093244	49.234984	SIO2HL	1.56018811	86.007
23	-144.921986	0.952550			108.817
						24	-6366.151454	44.409555	SIO2HL	1.56018811	119.243
25	-217.880653	270.750636			120.802
						26	-219.739583	-239.183412		REFL	145.235
27	184.636114	269.507816		REFL	128.436
						28	197.874974	37.626342	SIO2HL	1.56018811	86.078
29	524.125561	15.614096			81.840
						30	-406.239674	8.985971	SIO2HL	1.56018811	81.383
31	106.800601	32.709694			77.510
						32	-1162.346319	30.365146	SIO2HL	1.56018811	78.287
33	-161.881438	8.348534			81.54
						34	-166.445156	11.418724	SIO2HL	1.56018811	81.127
35	-1076.211334	42.927908			95.134
						36	-546.503260	41.443273	SIO2HL	1.56018811	113.022
37	-173.835591	0.952741			119.110
						38	-372.875307	32.537548	SIO2HL	1.56018811	128.490
39	-210.380863	1.042699			131.802
						40	303.213120	50.564746	SIO2HL	1.56018811	145.286
41	5346.623071	0.921057			144.413
						42	262.055999	33.924688	SIO2HL	1.56018811	133.743
43	733.81 3747	0.928913			130.461
						44	163.353186	39.409378	SIO2HL	1.56018811	116.482
45	349.938998	0.920003			111.971
						46	279.917107	28.062402	SIO2HL	1.56018811	109.138
47	11299.235097	0.896338			104.077
						48	88.608734	39.730068	SIO2HL	1.56018811	73.896
49	114.264419	0.751321			56.000
						50	65.720894	25.021454	SAPHIR	1.92674849	49.523
51	131.441788	25.021469	SAPHIR	1.92674849	39.659
						52	0.000000	1.000000	HKIINDEX	1.55600000	18.066
53	0.000000	0.000000	Air	0.00000000	15.503

Table 1A

Aspheric constants

SRF	1	6	8	12	16
						K	0	0	0	0	0
C1	-2.263569e-08	5.432610e-08	-7.143508e-09	2.619298e-07	-3.184960e-07
						C2	-9.879901e-13	-7.797101e-12	1.564097e-11	-3.814641e-11	-3.142211e-11
C3	3.070713e-17	8.455873e-16	-1.599946e-15	1.148617e-14	-1.728296e-15
						C4	-6.018627e-21	-6.875038e-20	3.060476e-19	-4.506119e-18	-1.249207e-18
C5	4.073174e-26	3.863488e-24	-2.788321e-23	-5.794434e-23	-9.678014e-24
						C6	1.391778e-29	-1.112310e-28	1.126553e-27	4.244063e-26	-4.921692e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	22	26	27	28	31
						K	0	0	0	0	0
C1	2.863527e-08	8.694636e-09	-6.654566e-09	5.614883e-08	-1.288689e-07
						C2	1.884154e-12	1.385871e-13	-1.686449e-13	1.450774e-12	-4.820574e-12
C3	1.636375e-17	1.727286e-18	-2.470942e-18	1.892047e-16	5.082977e-16
						C4	1.888300e-20	4.461465e-23	-2.362157e-22	6.954696e-21	-1.375138e-19
C5	-2.021635e-24	-7.172318e-28	7.757389e-7	-1.108417e-24	1.555422e-23
						C6	1.591959e-28	3.081240e-32	-3.330142e-31	2.459404e-28	-2.481857e-28
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	34	36	41	47	49
						K	0	0	0	0	0
C1	-1.177998e-07	-2.187776e-08	-1.577571e-08	-8.244653e-09	2.024084e-07
						C2	-5.683441e-12	-8.068584e-14	3.706857e-13	4.957466e-12	1.422789e-11
C3	-5.647064e-16	8.600815e-17	-1.492063e-17	-2.442972e-16	3.923209e-15
						C4	-7.031797e-21	-2.071494e-20	-9.742126eI	6.741381e-21	4.845684e-19
C5	-1.902336e-24	1.290940e-24	6.498365e-26	2.034640e-25	-2.134986e-22
						C6	2.891112e-29	-3.884318e-29	-9.630077e-31	-2.570056e-29	5.591977e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	9.579172e-34	0.000000e+00

Table 2

Embodiment 2 (b037b): NA=1.35, β=-0.25, λ=193.4nm

The surface	Radius	Thickness	Material	Refractive index	Semidiameter
						0	0.000000	37.647680			62.000
1	526.196808	49.977602	SIO2HL	1.56018811	75.944
						2	-256.668548	1.120100			85.473
3	696.160336	28.649736	SIO2HL	1.56018811	90.668
						4	-2056.955285	22.244610			92.750
5	-195.811665	49.974335	SIO2HL	1.56018811	92.870
						6	-158.185918	9.821764			101.539
7	138.796255	49.218181	SIO2HL	1.56018811	90.394
						8	301.060143	1.660319			80.597
9	161.646552	42.095627	SIO2HL	1.56018811	78.153
						10	-406.812049	0.979493			70.852
11	100.020556	24.469422	SIO2HL	1.56018811	52.354
						12	102.330592	10.088496			38.573
13	0.000000	10.406389			37.226
						14	-157.109979	8.950512	SIO2HL	1.56018811	38.841
15	618.822068	8.847956			46.776
						16	-561.300665	33.147649	SIO2HL	1.56018811	51.388
17	-73.150544	9.448760			56.377
						18	-699.300574	8.926672	SIO2HL	1.56018811	57.781
19	-86.551998	8.003693			64.608
						20	-78.306541	10.360105	SIO2HL	1.56018811	66.592
21	-117.142798	2.915635			75.827
						22	-356.673528	46.693825	SIO2HL	1.56018811	86.465
23	-108.386760	266.538313			90.245
						24	-177.092218	-236.552196		REFL	129.567
25	200.462621	288.213928		REFL	136.687
						26	604.677438	50.022575	SIO2HL	1.56018811	82.440
27	125.234518	13.901039			73.274
						28	257.421526	34.367199	SIO2HL	1.56018811	73.449
29	111.03495	29.307766			73.890
						30	-848.480773	29.119950	SIO2HL	1.56018811	74.404
31	-194.073508	7.840952			80.032
						32	-225.307336	46.053997	SIO2HL	1.56018811	81.668
33	-535.709449	0.941640			105.651
						34	-1622.810467	46.410355	SIO2HL	1.56018811	108.373
35	-173.207717	0.932943			113.398
						36	-236.921577	22.327373	SIO2HL	1.56018811	116.764
37	-261.220038	0.938270			124.709
						38	364.988031	40.936258	SIO2HL	1.56018811	142.520
39	11406.698081	0.943482			142.679
						40	379.203162	36.840265	SIO2HL	1.56018811	142.867
41	-33782.42006	0.921857			141.929
						42	245.879991	49.886843	SIO2HL	1.56018811	134.831
43	-10061.581161	0.883850			132.020
						44	145.995266	39.892414	SIO2HL	1.56018811	105.854
45	375.256079	0.817132			99.565
						46	86.107554	37.429431	SIO2HL	1.56018811	73.276
47	215.234027	0.667291			63.094
						48	52.718236	26.546970	SIO2HL	1.56018811	42.800
49	0.000000	16.594510	SAPHIR	1.92674849	42.800
						50	0.000000	0.999826	H2O	1.43612686	42.800
51	0.000000	0.000000	Air	0.00000000	15.501

Table 2A

Aspheric constants

SRF	1	6	9	12	14
						K	0	0	0	0	0
C1	-8.448852e-08	-4.108258e-09	-6.153759e-08	4.456016e-07	-6.305745e-07
						C2	-4.761055e-12	-9.598657e-12	-1.480269e-11	1.857407e-11	-7.903687e-11
C3	-1.420861e-16	1.072661e-15	1.473191e-15	1.064538e-14	-2.534563e-14
						C4	-8.023974e-20	-6.889975e-0	-3.255374e-19	-5.079476e-18	-3.735078e-18
C5	1.173437e-23	2.314066e-24	3.131675e-23	1.056992e-22	1.905659e-22
						C6	-1.454073e-27	-3.793935e-29	-6.955428e-28	7.981996e-26	-3.500146e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	20	24	25	26	29
						K	0	0	0	0	0
C1	1.209336e-07	1.259532e-08	-4.077497e-09	1.111414e-07	-8.942189e-08
						C2	1.869926e-11	3.424346e-13	-8.690596e-14	3.172584e-13	-1.116520e-13
C3	1.314270e-15	6.952906e-18	-1.505812e-18	3.429058e-19	4.168290e-16
						C4	3.650689e-19	3.744203e-22	-8.583957e-23	-1.068048e-20	-2.231424e-19
C5	-5.603440e-23	-1.203108e-26	2.784182e-27	1.935865e-24	2.267328e-23
						C6	9.844086e-27	6.714766e-31	-1.06660e-31	-5.318242e-29	-1.588914e-27
C7	0.000000e+00	0.00000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	32	34	39	45	47
						K	0	0	0	0	0
C1	-9.549663e-08	-5.673614e-09	-1.220571e-08	-2.613273e-08	1.649072e-07
						C2	-3.034519e-12	-5.774683e-14	4.574492e-13	4.882999e-12	-4.982295e-13
C3	1.985443e-16	-1.715933e-16	-3.026161e-17	-2.171852e-16	-2.462341e-16
						C4	-1.403621e-20	5.949307e-21	8.480395e-22	8.220913e-21	6.329880e-19
C5	2.496197e-24	1.220843e-25	-5.629908e-27	2.183741e-25	-1.498580e-22
						C6	-1.598958e-28	-2.178077e-29	-3.377722e-32	-2.816869e-29	1.552461e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	1.520501e-33	0.000000e+00

Table 3

Embodiment 3 (b037a): NA=1.45, β=-0.25, λ=193.4nm

The surface	Radius	Thickness	Material	Refractive index	Semidiameter
						0	0.000000	37.647680			62.000
1	178.098560	47.089109	SIO2HL	1.56018811	83.684
						2	508.791874	0.982161			86.920
3	260.152118	29.610169	SIO2HL	1.56018811	89.203
						4	-897.680969	14.988854			89.348
5	-224.555888	50.010854	SIO2HL	1.56018811	89.318
						6	-167.290149	6.943751			94.603
7	185.350898	29.083481	SIO2HL	1.56018811	84.200
						8	161.696842	4.567325			74.817
9	156.295087	29.687097	SIO2HL	1.56018811	74.801
						10	-1628.579737	27.610587			72.999
11	116.709207	25.652669	SIO2HL	1.56018811	57.349
						12	3359.816893	2.336800			52.702
13	0.000000	42.058143			50.890
						14	-114.711496	34.899486	SIO2HL	1.56018811	53.065
15	-73.282662	4.817213			60.856
						16	-72.166685	17.818288	SIO2HL	1.56018811	60.190
17	-80.823907	4.905081			66.269
						18	-78.170209	34.642475	SIO2HL	1.56018811	65.802
19	-161.353349	3.907912			83.613
						20	-250.115507	50.004289	SIO2HL	1.56018811	87.033
21	-130.504962	244.427626			94.956
						22	-180.721067	-214.432541		REFL	135.011
23	179.125663	274.568868		REFL	126.490
						24	337.886373	47.239794	SIO2HL	1.56018811	107.066
25	-899.516467	5.847365			104.221
						26	-2346.009271	43.828445	SIO2HL	1.56018811	101.016
27	101.771490	35.484160			86.055
						28	-4439.596410	23.703533	SIO2HL	1.56018811	86.263
29	-254.324560	5.801976			87.609
						30	-445.540133	48.164461	SIO2HL	1.56018811	87.772
31	-735.213902	16.951226			100.097
						32	-650.817086	49.961292	SIO2HL	1.56018811	102.416
33	-281.005458	31.479288			116.698
						34	-649.019441	49.768062	SIO2HL	1.56018811	130.316
35	-215.856617	0.928162			134.641
						36	312.849138	39.828764	SIO2HL	1.56018811	135.256
37	-1022.199791	0.857904			133.831
						38	278.748013	42.635737	SIO2HL	1.56018811	128.369
39	-3295.326556	0.914469			126.650
						40	128.656616	61.387113	SIO2HL	1.56018811	106.520
41	-2188.188515	0.730038			100.722
						42	90.065507	18.596750	SIO2HL	1.56018811	69.706
43	93.775489	1.000000			60.097
						44	73.203900	33.227474	SAPHIR	1.92674849	55.900
45	0.000000	11.657723	SIO2HL	1.56018811	55.900
						46	0.000000	0.999913	HIINDEX	1.55600000	55.900
47	0.000000	0.000000	Air	0.00000000	15.520

Table 3A

Aspheric constants

SRF	1	6	8	12	14
						K	0	0	0	0	0
C1	-3.797021e-08	4.091151e-08	9.284044e-09	1.793476e-07	-3.526789e-07
						C2	-1.858357e-12	-7.880362e-12	2.927990e-11	-4.710051e-11	-5.029864e-11
C3	6.026920e-17	9.074630e-16	-2.187906e-15	2.197728e-15	-6.353989e-15
						C4	-3.792813e-20	-7.153651e-20	3.131133e-19	-3.553387e-18	-2.243484e-18
C5	3.121506e-24	2.884237e-24	-3.422295e-23	-7.638265e-23	1.422334e-23
						C6	-1.940311e-28	-4.358943e-29	2.472280e-27	2.576563e-26	-7.652798e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	18	22	23	24	27
						K	0	0	0	0	0
C1	4.805447e-08	1.366493e-08	-7.247654e-09	2.039086e-09	-2.335210e-07
						C2	6.053101e-12	3.157722e-13	-1.844324e-13	4.079171e-12	-3.581428e-12
C3	1.864225e-16	4.418704e-18	-3.130608e-18	3.415807e-19	8.204976e-16
						C4	1.774391e-19	3.842541e-22	-2.876782e-22	-3.143532e-21	-1.472132e-19
C5	-1.538124e-23	-1.422352e-26	1.047999e-26	-6.009771e-26	1.193755e-23
						C6	1.486597e-27	5.625242e-31	-4.798652e-31	5.373759e-30	-5.012293e-28
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	30	32	37	41	43
						K	0	0	0	0	0
C1	-9.015949e-08	-4.710517e-08	2.981775e-08	7.825942e-08	-1.254855e-07
						C2	-5.963683e-12	1.502154e-12	-1.562632e-15	-5.678508e-12	4.044789e-11
C3	-2.709599e-17	-1.008729e-16	-1.924785e-17	9.897699e-16	5.935178e-15
						C4	1.782520e-20	-2.037099e-20	1.470777e-21	-1.257950e-19	-7.518165e-19
C5	-1.313151e-25	1.244695e-24	-9.287054e-26	1.131690e-23	5.626054e-23
						C6	1.114296e-28	-7.926554e-29	2.454712e-30	-6.106697e-28	5.101190e-26
C7	0.000000e+00	0.000000e+00	0.000000e+00	1.494562e-32	0.000000e+00

Table 4

Embodiment 4:NA=1.35, β=-0.25, λ=193.4nm

The surface	Radius	Thickness	Material	Refractive index	Semidiameter
						0	0.000000	37.647680			62.000
1	213.097095	21.139875	SIO2HL	1.56018811	81.073
						2	980.962863	0.933467			81.638
3	312.309311	19.869666	SIO2HL	1.56018811	82.923
						4	7050.227976	14.977212			82.853
5	-284.845054	46.899913	SIO2HL	1.56018811	82.842
						6	-316.674517	31.820687			87.867
7	127.504953	32.199127	SIO2HL	1.56018811	90.842
						8	177.687028	14.069304			84.748
9	233.816949	49.949045	SIO2HL	1.56018811	84.566
						10	-272.601570	1.802731			81.010
11	92.974202	24.948435	SIO2HL	1.56018811	61.866
						12	228.036841	31.795297			55.983
13	-128.436888	15.028089	SIO2HL	1.56018811	45.986
						14	-208.039449	19.686225			50.292
15	-85.822730	9.039605	SIO2HL	1.56018811	51.590
						16	-124.923386	5.248146			59.096
17	-134.255203	24.981296	SIO2HL	1.56018811	61.621
						18	-866.028170	70.079618			66.114
19	-91.784845	49.926992	SIO2HL	1.56018811	78.125
						20	-130.258172	3.354815			102.297
21	-819.889396	43.461173	SIO2HL	1.56018811	114.993
						22	-193.549016	277.291798			117.690
23	-220.432400	-231.344649		REFL	147.536
						24	175.171589	261.356424		REFL	120.087
25	222.618410	49.895981	SIO2HL	1.56018811	93.866
						26	227.634130	10.722465			85.687
27	469.132386	43.799915	SIO2HL	1.56018811	85.491
						28	112.693662	31.313114			76.622
29	12293.399547	31.702057	SIO2HL	1.56018811	77.313
						30	-155.449641	4.962336			79.575
31	-219.506451	26.268152	SIO2HL	1.56018811	79.827
						32	-1377.822971	32.354789			93.063
33	-519.892544	47.183977	SIO2HL	1.56018811	101.635
						34	-163.140684	1.841108			110.786
35	-340.920966	26.977392	SIO2HL	1.56018811	116.967
						36	-214.582539	2.006234			120.143
37	271.181444	53.143321	SIO2HL	1.56018811	127.047
						38	-1118.441818	19.790952			125.887
39	0.000000	-14.609943			112.489
						40	174.102740	52.205661	SIO2HL	1.56018811	107.954
41	-663.589997	3.836965			104.404
						42	84.561977	46.625084	SIO2HL	1.56018811	71.481
43	95.046969	0.694913			51.033
						44	64.492898	46.885676	SAPHIR	1.92674849	46.520
45	0.000000	1.000000	H2O	1.43612686	18.265
						46	0.000000	0.000000	Air	0.00000000	15.515

Table 4A

Aspheric constants

SRF	1	6	8	12	15
						K	0	0	0	0	0
C1	-7.766221e-09	3.921777e-08	-1.973978e-08	2.262385e-07	-2.849645e-07
						C2	-1.414298e-12	-746692e-12	1.686856e-11	-3.111178e-11	-3.795087e-11
C3	2.026799e-16	9.877277e-16	-1.521195e-15	8.999889e-15	-4.195519e-15
						C4	-9.311177e-21	-6.24165e-20	2.838141e-19	-4.631502e-18	-2.684695e-18
C5	8.98377e-26	3.68366e-24	-2.893390e-23	7.225241e-23	-2.249016e-23
						C6	-5.139250e-30	-1.606542e-28	1.372152e-27	5.035383e-26	-5.606361e-26
C7	0.000000e+00	0.000000e+00	0.000000e+0	0.000000e+00	0.000000e+00

SRF	19	23	24	25	28
						K	0	0	0	0	0
C1	2.306275e-08	9.197905e-09	-7.280789e-09	8.044076e-08	-1.035389e-08
						C2	1.672430e-12	1.297990e-13	-2.062090e-13	6.845761e-13	5.752946e-14
C3	-3.451288e-18	1.447412e-18	-3.885785e-18	8.440855e-17	3.412577e-16
						C4	3.656429e-20	4.002605e-23	-3.101616e-22	-8.233892e-21	-1.247784e-19
C5	-5.091821e-24	-7.044663e-28	1.113163e-26	1.115110e-24	5.556509e-24
						C6	5.148418e-28	3.011922e-32	-6.186058e-31	-3.079026e-29	1.295943e-27
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	31	33	38	41	44
						K	0	0	0	0	0
C1	-1.291718e-07	-4.530057e-08	-1.801990e-08	-2.682021e-08	-1.900216e-07
						C2	-4.385607e-12	-2.081953e-13	6.277450e-13	7.361672e-12	-4.832504e-11
C3	-2.255698e-16	1.680387e-16	-5.256278e-17	-3.951877e-16	-1.233010e-14
						C4	-2.117620e-21	-4.155797e-20	-4.688822e-21	1.434967e-20	7.440284e-19
C5	-1.322919e-24	3.040355e-24	4.497908e-25	-3.980440e-26	1.430823e-22
						C6	1.074049e-28	-1.238033e-28	-9.348185e-30	-2.642973e-29	-3.924075e-25
C7	0.000000e+00	0.000000e+00	0.000000e+00	1.163864e-33	0.0000

Table 5

Embodiment 5:NA=1.6, β=-0.25, λ=193.4nm

The surface	Radius	Thickness	Material	Refractive index	Semidiameter
						0	0.000000	37.663108			62.000
1	192.084227	26.622297	SIO2V	1.56078570	87.833
						2	1075.649716	0.946456			88.233
3	491.402040	19.101530	SIO2V	1.56078570	88.867
						4	-934.209447	36.905290			88.935
5	125.340633	9.623977	SIO2V	1.56078570	90.013
						6	122.019859	23.963817			87.312
7	252.185057	44.239148	SIO2V	1.56078570	87.669
						8	-204.394078	0.923049			87.161
9	102.471834	52.8522020	SIO2V	1.56078570	67.768
						10	254.533994	9.305878			48.073
11	0.000000	52.418616			46.820
						12	-75.641562	68.872834	SIO2V	1.56078570	58.068
13	-124.953275	39.621161			93.864
						14	-835.558655	54.318921	SIO2V	1.56078570	126.993
15	-178.850083	0.948020			130.230
						16	2111.392648	22.857019	SIO2V	1.56078570	132.098
17	-901.583067	358.679202			132.071
						18	-225.015829	-231.613549		REFL	160.876
19	168.185189	261.594819		REFL	120.144
						20	-736.571530	23.114077	SIO2V	1.56078570	81.485
21	132.965130	36.406211			86.933
						22	-512.908458	28.535664	SIO2V	1.56078570	87.621
23	-185.099986	6.615931			92.898
						24	-544.628556	33.807132	SIO2V	1.56078570	99.839
25	-547.431224	19.995820			114.885
						26	-359.224408	99.479683	SIO2V	1.56078570	119.014
27	-168.873687	12.916761			143.505
						28	313.449462	92.758623	SIO2V	1.56078570	165.026
29	983.057723	1.167054			158.153
						30	227.152511	48.817493	SIO2V	1.56078570	148.584
31	684.382976	0.981700			144.866
						32	144.775480	60.829967	SIO2V	1.56078570	121.541
33	1285.387522	0.899534			116.276
						34	99.002284	39.642869	SIO2V	1.56078570	84.155
35	243.117451	0.805490			74.674
						36	65.952055	54.681070	SAPHIR	1.92674849	54.379
37	0.000000	0.000000	Air	0.00000000	15.530

Table 5A

Aspheric constants

SRF	4	5	10	14	18
						K	0	0	0	0	0
C1	4.332466e-08	5.983847e-08	4.678448e-07	-5.502311e-09	9.581997e-09
						C2	-4.251613e-12	-1.394334e-11	1.214772e-11	6.759433e-14	1.191548e-13
C3	8.548420e-16	1.246293e-15	1.462858e-14	-2.777895e-18	5.628084e-19
						C4	-7.822847e-20	-2.065935e-19	-5.084805e-18	1.850960e-22	7.255139e-23
C5	3.463295e-24	1.861321e-23	4.192361e-22	-7.883399e-27	-1.691943e-27
						C6	-7.495559e-29	-7.372680e-28	1.456331e-26	1.533878e-31	3.619858e-32
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	19	20	21	24	26
						K	0	0	0	0	0
C1	-5.661490e-09	8.762490e-08	-3.207763e-08	-6.520443e-08	4.364974e-09
						C2	-1.921628e-13	-1.093121e-11	-5.311243e-12	4.777722e-13	-1.522836e-12
C3	-7.055884e-19	1.359734e-15	6.816058e-16	-7.895875e-17	-6.656442e-18
						C4	-6.935220e-22	-2.479964e-19	-2.253013e-19	1.733738e-20	-2.640069e-21
C5	3.152816e-26	2.421781e-23	2.354847e-23	-2.097861e-24	2.889539e-25
						C6	-1.191863e-30	-1.346005e-27	-1.003551e-27	1.235456e-28	-1.101803e-29
C7	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00	0.000000e+00

SRF	29	33	35
				K	0	0	0
C1	8.788855e-09	3.258556e-08	1.084860e-07
				C2	-6.462954e-13	1.588293e-12	6.094001e-12
C3	-1.551858e-17	-1.752790e-16	1.646644e-16
				C4	1.099566e-21	1.227022e-20	-9.287322e-20
C5	-1.930245e-26	-5.173475e-25	1.657126e-23
				C6	1.160550e-31	1.295964e-29	-1.278529e-27
C7	0.000000e+00	-1.104258e-34	0.000000e+00

Claims (31)

1. one kind is used for the projection objective on the image surface that the projection objective that is suitable for the microlithographic projection exposure machine is provided at the pattern that provides on the object plane of projection objective is comprised:

For the radiation on the operation wavelength of projection objective is transparent a plurality of optical units;

Wherein at least one optical unit is the high index of refraction optical unit of being made by the high-index material with refractive index n 〉=1.6 on operation wavelength.

2. according to the projection objective of claim 1, wherein high-index material has refractive index n 〉=1.8 on operation wavelength.

3. according to the projection objective of claim 1 or 2, wherein high-index material is a sapphire.

4. according to the projection objective of claim 1 and 2, wherein high-index material is a germanium dioxide.

5. according to each projection objective of aforementioned claim, object side numerical aperture NA wherein _ObjGreater than 0.3.

6. according to the projection objective of claim 5, wherein with | β | the object side numerical aperture NA that≤0.25 absolute minification combines _Obj＞0.36.

7. according to each projection objective of aforementioned claim, have the first high index of refraction optical unit and at least one second high index of refraction optical unit.

8. according to the projection objective of claim 7, wherein each of the first high index of refraction optical unit and the second high index of refraction optical unit is made by high-index material, this material presents the birefringence of the birefringent orientation of having stipulated each optical unit, wherein the first and second high index of refraction unit are differently installed with respect to birefringent orientation, so that birefringent effect to the small part that is caused by the high index of refraction optical unit is compensated.

9. according to each projection objective of aforementioned claim, wherein projection objective has a last optical unit that approaches image surface most, and wherein last optical unit to small part is made by the high-index material with refractive index n＞1.6.

10. according to the projection objective of claim 9, wherein last optical unit is the monolithic plano-convex lens of being made by the high-index material with refractive index n＞1.6.

11. projection objective according to claim 9, wherein last optical unit is by form along two optical units cutting apart the mutual optics contact of interface at least, and at least one optical unit that wherein forms last optical unit is made up of the high-index material with refractive index n＞1.6.

12. according to the projection objective of claim 9, wherein last optical unit by the plano-convex lens unit of an entering surface of exit face with crooked entering surface and plane with form with the exit face planopaallel plate that this plano-convex lens unit optics contacts along the plane divisional plane.

13. according to the projection objective of claim 12, its convexity planar lens unit is made up of the high-index material with refractive index n＞1.6, and wherein the exit face planopaallel plate is made up of fused quartz.

14. according to the projection objective of claim 12, wherein the plano-convex lens unit is made up of fused quartz and this exit face planopaallel plate is made up of the high-index material with refractive index n＞1.6.

15. according to the projection objective of claim 11, wherein last optical unit is shaped as plano-convex lens, and divisional plane is bent so that two optical units that contact at the divisional plane place are the lens components with similar refracting power.

16. each projection objective according to aforementioned claim, wherein projection objective is designed to an immersion objective of revising with reference to aberration, so that filled greater than 1 submergence medium significantly by having refractive index at last optical unit and the image-side operating distance between the image surface.

17. according to the projection objective of claim 16, wherein projection objective adapts to immersion fluid, this immersion fluid has the refractive index greater than 1.4 when operation wavelength.

18. according to the projection objective of claim 17, wherein projection objective designed to be used the 193nm operation wavelength, and wherein immersion fluid is a cyclohexane.

19. each projection objective according to aforementioned claim 1 to 15, wherein projection objective is designed to have the solid immersion medium that are about or are lower than the limited image-side operating distance of operation wavelength, so that the evanescent field of going out from the image-side exit face of projection objective can be used in imaging.

20. according to each projection objective of aforementioned claim 1 to 15, wherein projection objective is designed to the solid immersion photoetching, wherein the image-side exit face of projection objective has Mechanical Contact with the coupling surface that the substrate that will be exposed is associated.

21. according to each projection objective of aforementioned claim, wherein image-side numerical aperture NA is greater than 1.3.

22., wherein approach most unthreaded hole face that image surface places and be placed between the zone of the zone of the beam diameter local maximum that approaches image surface most and the converging beam between the image surface according to each projection objective of aforementioned claim.

23. have image surface and a projection objective, and, has the converging beam of through this image surface, wherein unthreaded hole face or the system aperture image surface place distance of 10mm at least that is arranged at described lens from this projection objective from its lens farthest.

24. be used for the pattern that provides is imaged onto the on-chip microlithographic projection exposure method of the image surface that is arranged on projection objective on the mask of the object plane that is arranged in projection objective, wherein use according to each the microlithography projection objective at least in the aforementioned claim, and between the last lens of microlithography projection objective and the substrate that will be exposed, introduce immersion fluid.

25., wherein used the immersion fluid that on the operation wavelength of projection objective, has greater than 1.4 refractive index according to the method for claim 24.

26. according to the method for claim 25, wherein immersion fluid has the refractive index greater than 1.5 on operation wavelength.

27. be used for the pattern that provides is imaged onto the on-chip microlithographic projection exposure method of the image surface that is arranged on projection objective on the mask of the object plane that is arranged in projection objective, the last optical unit of wherein employed projection objective image-side is fitted or is pressed on the object that will be exposed, and comprises the step of following given sequence:

The substrate of placing projection objective relative to each other and will being exposed;

The exit face of projection objective and the coupling surface of substrate are contacted;

Come alignment mask with respect to projection objective, so that the area of the pattern of wanting in the mask is imaged at the target area of a substrate that contacts with the exit face of projection objective.

28., wherein a plurality of target areas arranged side by side on the substrate are repeated described each step according to the method for claim 27.

29., wherein thin transparent membrane is placed between the exit face of the substrate that will be exposed and projection objective according to the method for claim 27 or 28.

30., wherein use microlithography projection objective according to one of claim 1 to 23 according to each method of claim 24 to 29.

31. be used for the pattern that provides is imaged onto the on-chip microlithographic projection exposure method of the image surface that is arranged on projection objective on the mask of the object plane that is arranged in projection objective, wherein use microlithography projection objective, and between the last lens of microlithography projection objective and the substrate that will be exposed, introduce immersion fluid, and be immersion fluid wherein with cyclohexane give.

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