CN103353669A - High-numerical aperture immersion projection objective lens - Google Patents
High-numerical aperture immersion projection objective lens Download PDFInfo
- Publication number
- CN103353669A CN103353669A CN2013103250625A CN201310325062A CN103353669A CN 103353669 A CN103353669 A CN 103353669A CN 2013103250625 A CN2013103250625 A CN 2013103250625A CN 201310325062 A CN201310325062 A CN 201310325062A CN 103353669 A CN103353669 A CN 103353669A
- Authority
- CN
- China
- Prior art keywords
- lens
- group
- catoptron
- positive
- projection objective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Provided in the invention is a high-numerical aperture immersion projection objective lens that is used for imaging an image of an object plane in an image plane. The immersion projection objective lens comprises a parallel plate set, a first lens group, a reflector set, and a second lens group along the optical axis direction. The parallel plate set that is arranged at the light beam incidence direction includes a parallel plate; the first lens group has a positive focal power; the reflector set has a negative focal power; and the second lens group has a positive focal power. According to the high-numerical aperture immersion projection objective lens provided by the invention, aberration compensation can be realized well; the imaging quality can be improved; the resolving power of the objective lens can be enhanced; and the photoetching efficiency can also be improved.
Description
Technical field
The present invention relates to a kind of high-NA submergence projection objective, relate in particular to a kind of high resolution light projection photoetching objective lens.
Background technology
Optical projection lithography is to utilize the principle of optical projection imaging, and IC figure on the mask is transferred to optical exposure process on the gluing silicon chip in the mode of Step-and-repeat or step-scan exposure with the high resolution figure.The optical projection lithography technology grows up in contact and proximity photoetching technique basis.Adopt projection lithography, can prolong mask serviceable life, if adopt the projection objective of reduction magnification, also be convenient to mask manufacture.Optical projection lithography has experienced the evolution of Step-and-repeat photoetching (stepper) and step-scan photoetching (scanner).
Photolithography resolution can improve by the numerical aperture that shortens wavelength, reduction process constant and raising light projection photoetching objective lens.Facts have proved that shortening exposure wavelength is the most effective approach.The optical projection lithography technology has successively experienced several technological phases such as 436nm (g line), 365nm (i line), 248nm (KrF excimer laser), 193nm (ArF excimer laser) since 1978 are born.Except shortening exposure wavelength, constantly reducing technological coefficient k1 also is the very important factor that further improves resolving power.The approach that reduces the k1 value comprises several aspects such as improving lighting condition, raising resist performance, employing optical proximity correction and phase shifting mask.Through nearly 10 years effort, made technological coefficient factor k1 value in large production environment, be reduced to 0.4 from 0.7.The better combination of above-mentioned factor will make the k1 value be reduced to 0.3 and even less, and this will become a from now on Strategic Measure of an optical lithography development in period.When k1=0.25, just near the physics limit of optical lithography.Increasing numerical aperture also is the important channel of improving photolithography resolution, and the numerical aperture of camera lens increases to 0.82 gradually by initial 0.28,0.4,0.6, even 0.85, almost arrived the limit.In the situation of projection photolithography, be subjected to the restriction of the surrounding medium refractive index in the image space as number formulary value aperture.In the immersion lithographic method, possible numerical aperture is subjected to the restriction of immersing medium refractive index in theory.But for the consideration of reality, numerical aperture should at random near the refractive index of last medium, not become very large with respect to optical axis because therefore angle of propagation is understood.Industry is verified, and it is feasible that numerical aperture is no more than 95% of last medium refraction index of picture side substantially.This is corresponding to the relative about 72 ° angle of propagation of optical axis.For the operation wavelength of 193nm, this corresponding to water (n=1.43) as the situation of immersing medium under numerical aperture be 1.35.
Summary of the invention
Problem for the prior art that solves the purpose of this invention is to provide a kind of high-NA submergence projection objective device, improves the projection objective resolving power.The present invention proposes applicable a kind of deep ultraviolet illumination, numerical aperture reaches 1.35 light projection photoetching objective lens, and compact, the large visual field of this objective lens arrangement, image quality are good, and have moderate size and material consumption.
For reaching purpose of the present invention, the technical scheme of a kind of high-NA submergence projection objective provided by the invention comprises, is equipped with successively parallel flat group, first lens group, catoptron group and the second lens combination from the light beam incident direction; Wherein: the parallel flat group does not have focal power; The first lens group is complicated double gauss structure, has positive light coke, and the first lens group forms intermediary image one time to object space figure, and this intermediary image is positioned at before first catoptron of catoptron group; The catoptron group has negative power, and object space figure is formed for the second time intermediary image, is used for proofreading and correct the curvature of field of described object lens and dwindling its volume; The second lens combination has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends is by the parallel flat group, and incides the first lens group; The parallel flat group is as cover glass; The first lens group has the double gauss structure, is that the input beam to the first lens group carries out imaging, namely forms for the first time intermediary image, so that light beam can not be blocked by the second catoptron of catoptron group smoothly; On the other hand, the curvature of field that the first lens group produces described object lens, and the first catoptron of catoptron group, and the curvature of field that the second catoptron of catoptron group produces compensates mutually; The catoptron group is used for input beam is realized that two secondary reflections turn back, and produces the negative curvature of field in order to realizing compensation in described object lens, thus reduce in the described object lens the lensed bore of institute with and physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; At last, the light beam of object plane again by immersion liquid, forms the reduced image of object plane by after parallel flat group, first lens group, catoptron group and the second lens combination at the silicon chip face.
The described high-NA submergence of a kind of use provided by the invention projection objective is used for the deep ultraviolet lighting source.
The present invention compared with prior art has the following advantages:
1, to be divided into four parts be parallel flat group, first lens group, catoptron group and the second lens combination to object lens involved in the present invention, and wherein, that the focal power of first lens group, catoptron group, three mirror groups of the second lens combination is respectively is positive and negative, just.This structure can well be proofreaied and correct objective lens aberration, the particularly curvature of field, is conducive to improve image quality, and its ripple of object lens of the present invention differs and is 1nm, and distorting is 1nm.
2, involved in the present invention to described object lens consisted of by 25 lens and 2 catoptrons, all lens all use commaterial.Described objective lens arrangement is simple, compact, has simplified the object lens manufacture craft, has reduced cost of manufacture, has improved simultaneously the object lens quality.
3, the object lens that the present invention relates to, its numerical aperture is very large, can reach 1.35, if change the immersion liquid of high index of refraction, numerical aperture can be increased to 1.5, and operation wavelength is at deep ultraviolet, and objective angular field is larger.Therefore resolving power of lens involved in the present invention is higher, and photoetching efficient is higher.
4, object lens involved in the present invention are two far away core structures, and object space heart degree far away and picture Fang Yuanxin degree are all higher, owing to be two core structures far away, even therefore mask graph and silicon chip depart from and inclination, also can not change the multiplying power of projection lithography.
Description of drawings
Fig. 1 is the structural representation of high-NA submergence projection objective of the present invention;
Fig. 2 is high-NA submergence projection objective optical-modulation transfer function synoptic diagram in whole audience scope;
Fig. 3 a is high-NA submergence projection objective curvature of field synoptic diagram.
Fig. 3 b is high-NA submergence projection objective distortion synoptic diagram.
The drawing reference numeral explanation:
1-the first parallel flat, 2-the first positive lens, 3-the second positive lens,
4-the first meniscus lens, 5-the 3rd positive lens, 6-the first negative lens,
7-the 4th positive lens, 8-the 5th positive lens, 9-the second meniscus lens,
10-the 6th positive lens, 11-the 3rd meniscus lens, 12-the 4th meniscus lens,
13-the 5th meniscus lens, 14-the 7th positive lens, 15-the first catoptron,
16-the second catoptron, 17-the 6th meniscus lens, 18-the 7th meniscus lens,
19-the second negative lens, 20-the 8th positive lens, 21-the 9th positive lens,
22-the tenth positive lens, 23-the 11 positive lens, 24-the 12 positive lens,
25-the 13 positive lens, 26-the 14 positive lens, 27-the 15 positive lens,
The 28-image planes.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
As a kind of scheme that improves projection objective resolution, the present invention provides a kind of projection objective that is suitable for the microlithographic projection exposure machine according to a kind of design, its pattern that provides for the object plane with this projection objective is imaged onto the picture plane of this projection objective, this projection objective comprises: a plurality of optical elements, these optical elements are transparent for the radiation of the operating wave strong point of this projection objective.
As the submergence light projection photoetching objective lens, immersion liquid thickness wherein, preferably between 0.1mm and 10mm, because immersion liquid usually shows as high the absorption, therefore the less Thickness Design in above-mentioned thickness range may be favourable.
Fig. 1 is high-NA submergence light projection photoetching objective lens schematic layout pattern of the present invention, uses altogether 26 lens and two catoptrons, is equipped with successively parallel flat group G1, first lens group G2, catoptron group G3 and the second lens combination G4 from the light beam incident direction; Wherein: parallel flat group G1 does not have focal power; First lens group G2 is complicated double gauss structure, has positive light coke, and first lens group G2 forms intermediary image one time to object space figure, and this intermediary image is positioned at before first catoptron 15 of catoptron group G3; Catoptron group G3 has negative power, and object space figure is formed for the second time intermediary image, is used for proofreading and correct the curvature of field of described object lens and dwindling its volume; The second lens combination G4 has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends is by parallel flat group G1, and incides first lens group G2; Parallel flat group G1 is as cover glass; First lens group G2 has the double gauss structure, is that the input beam to first lens group G2 carries out imaging, namely forms for the first time intermediary image, so that light beam can not be blocked by catoptron group G3 the second catoptron 16 smoothly; On the other hand, the curvature of field that first lens group G2 produces described object lens, and the first catoptron of catoptron group G3, and the curvature of field that the second catoptron of catoptron group G3 produces compensates mutually; The catoptron group is used for input beam is realized that two secondary reflections turn back, and produces the negative curvature of field in order to realizing compensation in described object lens, thus reduce in the described object lens the lensed bore of institute with and physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; At last, the light beam of object plane again by immersion liquid, forms the reduced image of object plane by after parallel flat group G1, first lens group G2, catoptron group G3 and the second lens combination G4 at the silicon chip face.
Parallel flat group G1 comprises a parallel flat;
First lens group G2 comprises the first positive lens 2, the second positive lens 3, the first meniscus lens 4, the 3rd positive lens 5, the first negative lens (6), the 4th positive lens 7, the 5th positive lens 8, the second meniscus lens 9, the 6th positive lens 10, the 3rd meniscus lens 11, the 4th meniscus lens 12, the 5th meniscus lens 13, the 7th positive lens 14; In first lens group G2, described lens are independently installed, and are installed in respectively in the picture frame separately, and the picture frame of described lens links to each other with the whole lens barrel of described object lens.And the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
Catoptron group G3 comprises the first catoptron 15, the second catoptron 16; The first catoptron 15 and the second catoptron 16 that is to say that on same optical axis the line of the vertex curvature radius centre of sphere of the first catoptron 15 and the second catoptron 16 overlaps with described objective lens optical axis; But this high-NA submergence projection objective only use the first catoptron 15 and the second catoptron 16 from shaft portion, so that so that described object lens do not exist to block is in the light; At first in 15 reflections of the first catoptron, the light beam after the reflection is again through 16 reflections of the second catoptron, so that light beam is along original direction walking from first lens group G2 light beam out.
The second lens combination G4 comprises the 6th meniscus lens 17, the 7th meniscus lens 18, the second negative lens 19, the 8th positive lens 20, the 9th positive lens 21, the tenth positive lens 22, the 11 positive lens 23, the 12 positive lens 24, the 13 positive lens 25, the 14 positive lens 26, the 15 positive lens 27, the 15 positive lens 27 is plano-convex lenss, plano-convex lens is last piece lens of described object lens, and the last one side of described object lens is the plane; The aperture diaphragm of described object lens is between the 12 positive lens 24 and the 13 positive lens 25; In lens combination G4, each lens is independently installed, and is installed in respectively in the picture frame separately, and the picture frame of described lens links to each other with the whole lens barrel of described object lens.The mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.First lens group G2 has positive light coke; Catoptron group G3 has negative power; The second lens combination G4 has positive light coke.Image planes 28 are surfaces, silicon chip place.
Described parallel flat group (G1), first lens group (G2), the second lens combination (G4) adopt fused quartz glass.The refractive index of described fused quartz glass is 1.560326.
The present invention also provides the described high-NA submergence of a kind of use projection objective, is used for the deep ultraviolet lighting source.
27 elements that high-NA submergence projection objective of the present invention has and all be in same optical axis utilize the mechanical component of lens housing to fix relative position between them.The present invention has used fused quartz (refractive index is 1.560326 during described object lens centre wavelength) as lens material.
The course of work of high-NA submergence light projection photoetching objective lens of the present invention is: be 43 millimeters places of parallel flat group G1 precontract that mask places described object lens with object plane, each field of view center light vertical incidence parallel flat group G1, light passes through first lens group G2, catoptron group G3, the second lens combination G4 successively, and at last the mask imaging being contracted to 1/4th, to be imaged on image planes be on the silicon chip.Each field of view center light vertical incidence image planes, this projection objective are the two core structures far away in object space and picture side.
For satisfying the structural parameters requirement, and further improve picture element, object lens are carried out Continuous optimization, through each surperficial radius, thickness, interval after optimizing, and asphericity coefficient changes, the concrete Optimized Measures of present embodiment is Applied Optics Design software construction majorized function, and adds aberration and structural limitations parameter, progressively is optimized for existing result.
Present embodiment is realized by following technical measures: lighting source is the ArF laser instrument, and the numerical aperture of light projection photoetching objective lens is 1.35, and distortion is about 1nm, and the root mean square wave aberration is about 1nm, and described object lens reduction magnification is 4 times.
" sequence number " in the following table is to begin to arrange from light incident end, is sequence number S1 such as the beam incident surface of the first parallel flat 1, and the light beam exit facet is sequence number S2, and other minute surface sequence number number by that analogy; " radius " provides respectively the corresponding spherical radius in each corrugated, for aspheric surface, is its fixed point spherical radius; " spacing " provides between adjacent two surfaces along the centre distance of optical axis, if two surfaces belong to the same eyeglass, then spacing represents the thickness of this eyeglass.The design parameter of lens combination is as follows:
| Sequence number | Radius | Spacing | Material |
| Object plane | ∞ | 43.20 | ? |
| S1 | ∞ | 19.07 | SiO 2 |
| S2 | ∞ | 1.35 | ? |
| S3 | 341.90 | 31.70 | SiO 2 |
| S4(ASP) | -1470.50 | 3.34 | ? |
| S5 | 176.72 | 59.85 | SiO 2 |
| S6(ASP) | -625.99 | 3.87 | ? |
| S7(ASP) | -440.58 | 19.40 | SiO 2 |
| S8 | -684.29 | 1.00 | ? |
| S9 | 1962.02 | 22.58 | SiO 2 |
| S10(ASP) | -488.85 | 7.11 | ? |
| S11 | -266.59 | 17.28 | SiO 2 |
| S12(ASP) | 186.97 | 4.45 | ? |
| S13 | 228.14 | 46.73 | SiO 2 |
| S14(ASP) | -269.23 | 1.00 | ? |
| S15 | 93.65 | 32.13 | SiO 2 |
| S16(ASP) | 558.93 | 15.00 | ? |
| S17 | -172.37 | 18.93 | SiO 2 |
| S18(ASP) | -242.70 | 2.14 | ? |
| S19 | 560.38 | 29.76 | SiO 2 |
| S20(ASP) | -134.23 | 1.41 | ? |
| S21(ASP) | -184.97 | 24.61 | SiO 2 |
| S22 | -186.36 | 15.02 | ? |
| S23(ASP) | -95.37 | 24.37 | SiO 2 |
| S24 | -119.79 | 22.72 | ? |
| S25(ASP) | -76.53 | 38.92 | SiO 2 |
| S26 | -138.07 | 15.38 | ? |
| S27(ASP) | -307.87 | 68.53 | SiO 2 |
| ? | ? | ? | ? |
| S28 | -139.86 | 323.17 | ? |
| S29(ASP) | -246.04 | -266.51 | Mirror |
| S30(ASP) | 198.05 | 317.63 | Mirror |
| S31 | 328.75 | 18.36 | SiO 2 |
| S32(ASP) | 370.51 | 30.52 | ? |
| S33 | 213.13 | 27.65 | SiO 2 |
| S34(ASP) | 116.14 | 48.12 | ? |
| S35 | -2580.84 | 29.81 | SiO 2 |
| S36(ASP) | 224.87 | 27.26 | ? |
| S37 | -3509.94 | 49.60 | SiO 2 |
| S38 | -289.19 | 1.00 | ? |
| STO | -1199.37 | 52.10 | SiO 2 |
| S40 | -355.51 | 1.00 | ? |
| S41 | -3138.22 | 35.40 | SiO 2 |
| S42 | -1158.92 | 9.59 | ? |
| S43 | -688.99 | 79.55 | SiO 2 |
| S44(ASP) | -264.45 | 1.00 | ? |
| S45 | 265.30 | 89.62 | SiO 2 |
| S46 | -15405.57 | 1.00 | ? |
| Stop | 0.00 | 1.00 | ? |
| S48 | 197.15 | 49.40 | SiO 2 |
| S49(ASP) | 240.42 | 1.00 | ? |
| S50 | 133.74 | 74.25 | SiO 2 |
| S51(ASP) | 543.90 | 1.00 | ? |
| S52 | 59.47 | 60.76 | SiO 2 |
| S53 | ∞ | 2.00 | ? |
| Image planes | ∞ | 0 | ? |
| Coefficient | S32 |
| K | 0 |
| C1 | -3.25206E-08 |
| C2 | 3.86752E-12 |
| C3 | 4.36996E-16 |
| C4 | -1.67093E-19 |
| C5 | 2.93919E-23 |
| C6 | -3.26387E-27 |
| C7 | 2.31398E-31 |
| C8 | -9.47297E-36 |
| C9 | 1.70693E-40 |
More than the design parameter of each element in practical operation, can adjust to satisfy different systematic parameter requirements.
The deep ultraviolet high-NA immersion lithographic object lens that present embodiment is made adopt following three kinds of evaluation meanses to test and assess:
1, optical-modulation transfer function evaluation
Fig. 2 is high-NA submergence projection objective optical-modulation transfer function synoptic diagram in whole audience scope, and optical-modulation transfer function (MTF) is the direct evaluation of determining resolving power of lens and depth of focus.The diagram horizontal ordinate be spatial frequency, unit be line right/millimeter, ordinate is modulating function, described object lens MTF has reached diffraction limit.The described deep ultraviolet high-NA of present embodiment as shown in Figure 2 immersion lithographic object lens optical-modulation transfer function (MTF) figure in whole audience scope shows, during MTF ≈ 40%, that described resolving power of lens reaches 7000 lines is right/millimeter, cutoff frequency be 13760 lines right/millimeter.
2, astigmatism and the curvature of field and distortion
Fig. 3 a is light projection photoetching objective lens curvature of field intention, and horizontal ordinate is defocusing amount, and unit is millimeter, and ordinate is object height; Fig. 3 b is light projection photoetching objective lens distortion synoptic diagram, horizontal ordinate distortion number percent, and ordinate is object height.As can be seen from the figure, described object lens focal plane shift on the sagitta of arc and meridian ellipse all less than 0.2 μ m, difference with maximum deviation value and minimum deviation value represents always to depart from, be Ftot=Fmax-Fmin (namely, focal plane shift=visual field maximum offset-visual field minimum offset), its maximal value Ftot=80nm.Distortion changes with the visual field, and the marginal distortion maximum is 4.2e-8, so full the visual field maximum distortion less than 1nm.
3, root mean square wave aberration
The lithographic objective that present embodiment is designed, the minimum value of the monochromatic root mean square wave aberration take barycenter as reference is 1nm as 0.0053 (F0.57, i.e. place, 0.57 visual field), and maximal value is that 0.0083 λ (F0.79) is 1.6nm, and λ is wavelength.
The present invention selects part aspheric surface spherical lens by increasing eyeglass, optimizes radius, the thickness of each lens, and the parameter such as asphericity coefficient, and it is good to have obtained picture element, the new object lens that are easy to make.Described objective lens arrangement is compact, is two core structures far away and heart degree height far away, and picture element is good.
Those of ordinary skill in the art will be appreciated that, above embodiment illustrates the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, the above embodiment is changed, and modification all will drop in the scope of claims of the present invention.
Claims (8)
1. high-NA submergence projection objective, it is characterized in that: described submergence projection objective comprises: be equipped with successively parallel flat group, first lens group, catoptron group and the second lens combination from the light beam incident direction; Wherein: the parallel flat group does not have focal power; The first lens group is complicated double gauss structure, has positive light coke, and the first lens group forms intermediary image one time to object space figure, and this intermediary image is positioned at before first catoptron of catoptron group; The catoptron group has negative power, and object space figure is formed for the second time intermediary image, is used for proofreading and correct the curvature of field of described object lens and dwindling its volume; The second lens combination has positive light coke, intermediary image is imaged on the focal plane place of described object lens; The telecentric beam that object plane sends is by the parallel flat group, and incides the first lens group; The parallel flat group is as cover glass; The first lens group has the double gauss structure, is that the input beam to the first lens group carries out imaging, namely forms for the first time intermediary image, so that light beam can not be blocked by the second catoptron of catoptron group smoothly; On the other hand, the curvature of field that the first lens group produces described object lens, and the first catoptron of catoptron group, and the curvature of field that the second catoptron of catoptron group produces compensates mutually; The catoptron group is used for input beam is realized that two secondary reflections turn back, and produces the negative curvature of field in order to realizing compensation in described object lens, thus reduce in the described object lens the lensed bore of institute with and physical dimension; Described lens combination is used for the realization of 0.25 multiplying power, 1.35 numerical apertures; At last, the light beam of object plane again by immersion liquid, forms the reduced image of object plane by after parallel flat group, first lens group, catoptron group and the second lens combination at the silicon chip face.
2. high-NA submergence projection objective according to claim 1 is characterized in that, the parallel flat group comprises a parallel flat.
3. high-NA submergence projection objective according to claim 1, it is characterized in that the first lens group comprises the first positive lens, the second positive lens, the first meniscus lens, the 3rd positive lens, the first negative lens, the 4th positive lens, the 5th positive lens, the second meniscus lens, the 6th positive lens, the 3rd meniscus lens, the 4th meniscus lens, the 5th meniscus lens, the 7th positive lens; In the first lens group, described lens are independently installed, and are installed in respectively in the picture frame separately, and the picture frame of described lens links to each other with the whole lens barrel of described object lens, and the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
4. high-NA submergence projection objective according to claim 1 is characterized in that, the catoptron group comprises the first catoptron, the second catoptron; The first catoptron and the second catoptron that is to say that on same optical axis the line of the vertex curvature radius centre of sphere of the first catoptron and the second catoptron overlaps with described objective lens optical axis; But this high-NA submergence projection objective only use the first catoptron and the second catoptron from shaft portion, so that so that described object lens do not exist to block is in the light; At first reflect at the first catoptron from first lens group light beam out, the light beam after the reflection is again through the second mirror reflects, so that light beam is along original direction walking.
5. high-NA submergence projection objective according to claim 1, it is characterized in that the second lens combination comprises the 6th meniscus lens, the 7th meniscus lens, the second negative lens, the 8th positive lens, the 9th positive lens, the tenth positive lens, the 11 positive lens, the 12 positive lens, the 13 positive lens, the 14 positive lens, the 15 positive lens; The 15 positive lens is plano-convex lens, and plano-convex lens is last piece lens of described object lens, and the last one side of described object lens is the plane; The aperture diaphragm of described object lens is between the 12 positive lens and the 13 positive lens; In lens combination, each lens is independently installed, and is installed in respectively in the picture frame separately, and the picture frame of described lens links to each other with the whole lens barrel of described object lens, and the mechanical location of described lens is realized by the lateral thickness of reconditioning picture frame.
6. high-NA submergence projection objective according to claim 1 is characterized in that, described parallel flat group, first lens group, the second lens combination adopt fused quartz glass.
7. high-NA submergence projection objective according to claim 6 is characterized in that the refractive index of described fused quartz glass is 1.560326.
8. a right to use requires each the described high-NA submergence projection objective among the 1-8, is used for the deep ultraviolet lighting source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310325062.5A CN103353669B (en) | 2013-07-30 | 2013-07-30 | High-numerical aperture immersion projection objective lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310325062.5A CN103353669B (en) | 2013-07-30 | 2013-07-30 | High-numerical aperture immersion projection objective lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103353669A true CN103353669A (en) | 2013-10-16 |
| CN103353669B CN103353669B (en) | 2015-07-15 |
Family
ID=49310055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310325062.5A Expired - Fee Related CN103353669B (en) | 2013-07-30 | 2013-07-30 | High-numerical aperture immersion projection objective lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103353669B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103885159A (en) * | 2014-04-17 | 2014-06-25 | 中国科学院光电技术研究所 | High-NA projection lens |
| CN104111515A (en) * | 2014-07-11 | 2014-10-22 | 中国科学院光电技术研究所 | Large-numerical-aperture immersed projection object lens |
| CN105204139A (en) * | 2015-09-18 | 2015-12-30 | 苏州莱能士光电科技有限公司 | Smart home optical system high in resolution, large in aperture and large in field angle |
| CN105807410A (en) * | 2014-12-31 | 2016-07-27 | 上海微电子装备有限公司 | Catadioptric projection objective lens based on high numerical aperture |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894632A (en) * | 2003-12-15 | 2007-01-10 | 卡尔蔡司Smt股份公司 | Projection objective having a high aperture and a planar end surface |
| US20090080068A1 (en) * | 2007-09-26 | 2009-03-26 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and method of manufacturing device |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
-
2013
- 2013-07-30 CN CN201310325062.5A patent/CN103353669B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894632A (en) * | 2003-12-15 | 2007-01-10 | 卡尔蔡司Smt股份公司 | Projection objective having a high aperture and a planar end surface |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
| US20090080068A1 (en) * | 2007-09-26 | 2009-03-26 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and method of manufacturing device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103885159A (en) * | 2014-04-17 | 2014-06-25 | 中国科学院光电技术研究所 | High-NA projection lens |
| CN104111515A (en) * | 2014-07-11 | 2014-10-22 | 中国科学院光电技术研究所 | Large-numerical-aperture immersed projection object lens |
| CN104111515B (en) * | 2014-07-11 | 2016-09-28 | 中国科学院光电技术研究所 | A kind of large-numerical aperture immersion projection objective |
| CN105807410A (en) * | 2014-12-31 | 2016-07-27 | 上海微电子装备有限公司 | Catadioptric projection objective lens based on high numerical aperture |
| CN105807410B (en) * | 2014-12-31 | 2018-11-09 | 上海微电子装备（集团）股份有限公司 | A kind of refraction-reflection projection objective based on high-NA |
| CN105204139A (en) * | 2015-09-18 | 2015-12-30 | 苏州莱能士光电科技有限公司 | Smart home optical system high in resolution, large in aperture and large in field angle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103353669B (en) | 2015-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6259508B1 (en) | Projection optical system and exposure apparatus and method | |
| CN103499877B (en) | A kind of projection optical system of large-numerical aperture | |
| US7317571B2 (en) | Catadioptric projection optical system, exposure apparatus having the same, device fabrication method | |
| KR20040089688A (en) | Refractive projection lens | |
| CN102331616B (en) | Fully-spherical projection objective | |
| JP2003535356A (en) | Projection objective lens with aspheric lens surfaces arranged adjacently | |
| JP5105743B2 (en) | Refractive projection objective for immersion lithography | |
| CN103353669B (en) | High-numerical aperture immersion projection objective lens | |
| JPH1197344A (en) | Projection optical system, aligner containing the same, and method for manufacturing device using the device | |
| CN103499876B (en) | A kind of pure refractive projection optics system of large-numerical aperture | |
| KR20120081087A (en) | Catadioptric system, aberration measuring apparatus, method of adjusting optical system, exposure apparatus, and device manufacturing method | |
| JP2006147809A (en) | Aligner, projection optical system thereof, and method of manufacturing device | |
| US9436103B2 (en) | Wynne-Dyson projection lens with reduced susceptibility to UV damage | |
| JPWO2007086220A1 (en) | Catadioptric imaging optical system, exposure apparatus, and device manufacturing method | |
| CN102662307B (en) | High-resolution projection optical system | |
| CN104035187B (en) | Pure reflecting dry type projection optical system with large numerical aperture | |
| US6862078B2 (en) | Projection optical system and exposure apparatus with the same | |
| CN101950065B (en) | Fully-spherical deep ultraviolet lithography objective | |
| CN102608737B (en) | Extreme-ultraviolet-projection photoetching objective lens | |
| CN102508353B (en) | High-resolution Forbes aspherical photoetching objective lens | |
| US6700645B1 (en) | Projection optical system and exposure apparatus and method | |
| JP4868209B2 (en) | Projection optical system, exposure apparatus, and exposure method | |
| JP2003202494A (en) | Projection optical system, exposure unit and manufacture of device | |
| US8013976B2 (en) | Exposure apparatus, exposure method, and device fabrication method | |
| CN106773556B (en) | A kind of free form surface refraction-reflection type photoetching projection objective lens |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20210730 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |