CN103149808B - Immersed ultraviolet optical system - Google Patents
Immersed ultraviolet optical system Download PDFInfo
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- CN103149808B CN103149808B CN201310062008.6A CN201310062008A CN103149808B CN 103149808 B CN103149808 B CN 103149808B CN 201310062008 A CN201310062008 A CN 201310062008A CN 103149808 B CN103149808 B CN 103149808B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 238000007654 immersion Methods 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000004075 alteration Effects 0.000 abstract description 15
- 238000001259 photo etching Methods 0.000 abstract description 8
- 238000003384 imaging method Methods 0.000 abstract description 3
- 241000219739 Lens Species 0.000 description 124
- 210000000695 crystalline len Anatomy 0.000 description 124
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 201000009310 astigmatism Diseases 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004304 visual acuity Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention provides an immersed ultraviolet optical system which is used for imaging an image of an object plane into an image plane. The immersion type ultraviolet optical system comprises a first unit, a second unit, a third unit, a fourth unit and a fifth unit along the optical axis direction. The first unit group L1 has positive refractive power, the second unit group L2 has positive refractive power, the third unit group L3 has positive refractive power, the fourth unit group L4 has negative refractive power, and the fifth unit group L5 has negative refractive power. The immersion type ultraviolet optical system can better compensate aberration, improve imaging quality, improve system resolution and improve photoetching efficiency.
Description
Technical field
The present invention relates to a kind of for the immersion ultraviolet optics system in lithography process, semiconductor element producing device, belong to projection optics technical field.
Background technology
Photoetching is a kind of ic manufacturing technology, it utilizes the principle of optical projection image high graphics to be transferred to by the IC figure on mask plate optical exposure process on gluing silicon chip in the mode of exposure, and the manufacture of nearly all integrated circuit is all adopt optical projection lithography technology.At first, semiconductor devices manufacture, employing be the contact photolithography technology that mask and wafer sticks together.Nineteen fifty-seven, contact photolithography technology achieves the manufacture that characteristic dimension (Feature Size) is the dynamic RAM (DRAM, DynamicRandom Access Memory) of 20 microns.Afterwards, semicon industry introduces the proximity lithography technology between mask and wafer with certain interval, and produces respectively at 1971 and 1974 DRAM that characteristic dimension is 10 microns and 6 microns.1978, GCA company of the U.S. have developed First distribution wafer stepper in the world, and resolution can reach 2 microns, and distribution wafer stepper becomes rapidly the main flow in semiconductor fabrication.Distribution wafer stepper alignment precision can reach ± 0.5 μm, compared with litho machine before this, steppers significantly improves alignment precision during resolution and the mask/silicon chip alignment of system.
Photoetching technique is one of important support type technology of China's chip industry development, projection lithography device is the key equipment of large scale integrated circuit manufacturing process, At High Resolution projection optical system is the core component of high most advanced and sophisticated litho machine, and its performance directly decides the precision of litho machine.The projection optical system practical research of the domestic wavelength 193nm that just started working at present, design value aperture was also all not bery high in the past, and best result distinguishes that power is 0.35-0.5 micron.Because resolution is low, the figure of high-accuracy high-resolution can not be produced, can not meet the demand of large scale integrated circuit manufacture and research.
The formula that can be obtained litho machine resolving power by Rayleigh Diffraction Theorem is as follows:
R＝k
1λ/NA
In above formula, R is the resolving power of litho machine, k
1for the technological coefficient factor, λ is operation wavelength, and NA is the numerical aperture of light projection photoetching objective lens.Therefore, in order to meet higher resolution, need the wavelength of light source to shorten and the numerical aperture increasing projection optical system realizes, but when the wavelength of light source shortens, because optical glass is to the absorption of light, the material category for projection optical system can be very limited.
Summary of the invention
Technology of the present invention is dealt with problems: for solving the low deficiency of existing projection optical system resolution, a kind of immersion ultraviolet optics system realizing ultrahigh resolution is provided, can aberration for compensation better, promote image quality, and improve system resolution, improve photoetching efficiency.
Technical solution of the present invention: a kind of immersion ultraviolet optics system, comprise first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5 successively along its optical axis direction, wherein first module L1, second unit L2, the 4th unit L4 and the 5th unit L5 are in same optical axis; First module group L1 has positive refracting power, and second unit group L2 has positive refracting power, and the 3rd unit group L3 has positive refracting power, and the 4th unit group L4 has negative refracting power, and the 5th unit group L5 has negative refracting power.
Described first module L1 comprises the first positive lens 1, second positive lens 2, the 3rd positive lens 3 and the 4th positive lens 4.
Described second unit L2 comprises the 5th positive lens 5, first negative lens 6, the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens 9.
Described 3rd unit L3 comprises the first catoptron 10, second negative lens 11, the 9th positive lens 12, the tenth positive lens 13, second catoptron 14, the 3rd catoptron 18.
Described 4th unit L4 comprises the 3rd negative lens 19, the 4th negative lens 20, the 5th negative lens the 21, the 11 positive lens the 22, the 12 positive lens 23.
Described 5th unit L5 comprises the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the tenth negative lens the 28, the 11 negative lens the 29, the 12 negative lens the 30, the 13 negative lens the 31, the 14 negative lens 32, image planes 33.
Optical element in described first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5 is all monolithic mirror, fixes the relative position between each optical element with the mechanical component on optical element housing.
The optical material that the refracting telescope of described immersion ultraviolet optics system uses is all fused quartz.
The present invention and prior art have the following advantages:
(1) structure of the present invention composition can aberration for compensation better, improves image quality, and improves system resolution, improve photoetching efficiency.
(2) the numerical aperture NA of immersion ultraviolet optics system of the present invention is 1.35, and operation wavelength is 193 nanometers, and image space is larger, for 26mm × 5.5mm, because numerical aperture of objective is very large, overcomes the deficiency that existing projection optical system resolution is low, improve photoetching resolution.
(3) immersion ultraviolet optics entire system of the present invention is made up of 32 lens, is all monolithic mirror, does not adopt gummed optical element, simple and compact for structure.
(4) 32 optical elements in immersion ultraviolet optics system of the present invention, are made up of five unit, use two catoptrons to turn back to light path, effectively reduce system length.
(5) immersion ultraviolet optics system of the present invention have employed two telecentric system, can ensure the reduction magnification of projection exposure optical system, and telecentricity is high, and object space is the heart definitely far away, and the image space heart far away reaches 1.53mrad.
(6) immersion ultraviolet optics system proposed by the invention, can be applied to lighting source wavelength is in the deep UV projection photoetching device of 193nm.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of immersion ultraviolet optics system of the present invention;
Fig. 2 is projection optical system astigmatism of the present invention and the curvature of field, distortion schematic diagram, and wherein left figure is astigmatism and curvature of field figure, and right figure is distortion figure.
Label declaration: 1-first positive lens, 2-second positive lens, 3-the 3rd positive lens, 4-the 4th positive lens, 5-the 5th positive lens, 6-first negative lens, 7-the 6th positive lens, 8 the 7th positive lenss, 9-the 8th positive lens, 10-first catoptron, 11-second negative lens, 12-the 9th positive lens, 13-the tenth positive lens, 14-second catoptron, 18-the 3rd catoptron, 19-the 3rd negative lens, 20-the 4th negative lens, 21-the 5th negative lens, 22-the 11 positive lens, 23-the 12 positive lens, 24-the 6th negative lens, 25-the 7th negative lens, 26-the 8th negative lens, 27-the 9th negative lens, 28-the tenth negative lens, 29-the 11 negative lens, 30-the 12 negative lens, 31-the 13 negative lens, 32-the 14 negative lens, 33-image planes.
Embodiment
As shown in Figure 1, be immersion ultraviolet optics system layout of the present invention schematic diagram, 32 optical elements form first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5, arrange successively from light beam incident direction.
First module L1 is the unit group with positive refracting power, comprises the first positive lens 1, second positive lens 2, the 3rd positive lens 3 and the 4th positive lens 4.Assemble through the first positive lens 1 after ray cast to the first positive lens 1, then arrive the 3rd positive lens 3 after the second positive lens 2 is assembled, after the first negative lens 3 is assembled, incide the 4th positive lens 4.
Second unit L2 is the unit group with positive refracting power, comprises the 5th positive lens 5, first negative lens 6, the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens 9.Light enters the first negative lens 6 through the 5th positive lens 5 convergence after assembling from the 4th positive lens 4 of first module L1, after the first negative lens 6 is dispersed, arrive the 6th positive lens 7, after the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens are assembled for 9 three times continuously, leave second unit L2.
3rd unit L3 is the unit group with positive refracting power, comprises the first catoptron 10, second negative lens 11, the 9th positive lens 12, the tenth positive lens 13, second catoptron 14, the 3rd catoptron 18.Lens in this unit between the first catoptron 10 and the second catoptron 14 are because light reflection employs twice, light arrives the second negative lens 11 after the first catoptron 10 reflects, the 9th positive lens 12 is entered after the second negative lens 11 is dispersed, after the 9th positive lens 12, the tenth positive lens 13 are assembled continuously, arrive the second catoptron 14, and after after the 3rd catoptron 18, leave the 3rd unit L3.
4th unit L4 is the unit group with negative refracting power, comprises the 3rd negative lens 19, the 4th negative lens 20, the 5th negative lens the 21, the 11 positive lens the 22, the 12 positive lens 23.Light enters the 4th unit L4 and enter the 11 positive lens 22 after the 3rd negative lens 19, the 4th negative lens 20, the dispersing continuously of the 5th negative lens 21, after the 11 positive lens 22 is assembled, arrive the 12 positive lens 23, the 12 positive lens 23 pairs light assembles the diaphragm of rear arrival optical system.
5th unit L5 is the unit group with negative refracting power, comprises the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the tenth negative lens the 28, the 11 negative lens the 29, the 12 negative lens the 30, the 13 negative lens the 31, the 14 negative lens 32, image planes 33.Light enters the 4th unit L4 and arrive image planes 33 after the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the dispersing continuously of the tenth negative lens the 28, the 11 negative lens the 29, the 12 negative lens the 30, the 13 negative lens the 31, the 14 negative lens 32.
Optical system is folded by three catoptrons by this optical system cleverly, effectively shortens system overall length.What in the present invention, all diaphotoscopes used is all fused quartz material, and when centre wavelength 193nm place, the refractive index of fused quartz glass is 1.560491.
For meeting structural parameters requirement, and improve picture element further, Continuous optimization is carried out to system, after optimizing, the radius on each surface and thickness interval change, the concrete Optimized Measures of the present embodiment is Applied Optics Design software construction majorized function, and adding aberration and structural limitations parameter, successive optimization is existing result.
The embodiment of the present invention is realized by following technical measures: lighting source operation wavelength 193 nanometer, image space 26mm × 5.5mm, the numerical aperture (NA)=1.35 of optical system, photolithography resolution (R)=40 nanometer, optical system reduction magnification is 4 times, projection exposure optical system first mirror distance mask 42.10mm.
The front 42.10 millimeters of places of the first positive lens object plane and mask being placed in objective system of immersion ultraviolet optics system of the present invention, each field of view center light vertical incidence first positive lens, this immersion ultraviolet optics system is the object space heart far away at object space, light enters L4 unit group after the continuous convergence of L1 unit group, L2 unit group and L3 unit group, dispersing for twice then through L4 unit group and L5 unit group, reduces four times and is imaged on image planes and silicon chip.The chief ray vertical incidence image planes of immersion ultraviolet optics system nine visual fields, system is telecentric beam path in image space.
Immersion ultraviolet optics system of the present invention from mask face to the distance in silicon chip face be 1480mm, compact conformation.The object space of this system is the heart definitely far away, image space telecentricity is 1.53mrad, the telecentricity of object space image space is all very high, by optimizing the radius-of-curvature of each lens, thickness and the interval changed between each lens reduces the various aberrations of optical system, the final distortion of system is for being less than 1nm, and wave aberration is less than 1nm.
In practical operation, the design parameter (as radius-of-curvature, lens thickness, lens separation) of above each lens can do certain adjustment to meet different systematic parameter requirements.
Following several evaluation means is adopted to test and assess to the immersion ultraviolet optics system that the present embodiment makes:
1, root mean square wave aberration
Wave aberration is the optical assessment index all will used of the optical system that image quality is very high, and it intuitively can react the situation of low order aberration and higher order aberratons.Immersion ultraviolet optics system designed by the present embodiment, table 1 lists the root mean square wave aberration that each visual field take barycenter as each visual field of reference, and wherein ω represents full filed, and λ represents wavelength, known, and the maximum wave aberration of this system is 0.75 nanometer.
The root mean square wave aberration of each visual field of table 1
| Visual field | Root mean square wave aberration |
| 0.2ω | 0.0018λ |
| 0.3ω | 0.0020λ |
| 0.4ω | 0.0022λ |
| 0.5ω | 0.0025λ |
| 0.6ω | 0.0026λ |
| 0.7ω | 0.0030λ |
| 0.8ω | 0.0033λ |
| 0.9ω | 0.0035λ |
| 1.0ω | 0.0039λ |
2, spherical aberration, astigmatism, the curvature of field and distortion
Distortion can make a picture point offset from ideal position, in order to ensure alignment precision, and the width of the extra fine wire bar that distortion causes the displacement of picture point to be no more than will to scribe.Fig. 2 gives the various aberration curve figure of the projection optical system described in the present embodiment.As can be seen from Figure 2, the curvature of field maximal value of this system is 11nm, and astigmatism maximal value is 8nm, and the distortion maximum of optical system is-2.8e-8, and full filed maximum distortion is less than 1nm.
The present invention, by optimizing the radius-of-curvature of each mirror, thickness parameter, asphericity coefficient and lens separation, obtains the immersion ultraviolet optics system that high resolving power, picture element are excellent, has the advantages such as whole compact conformation is simple, telecentricity is high, imaging is excellent.
Non-elaborated part of the present invention belongs to the known technology of those skilled in the art.
Above-described specific descriptions; the object of inventing, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; for explaining the present invention, the protection domain be not intended to limit the present invention, within the spirit and principles in the present invention all; any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. an immersion ultraviolet optics system, it is characterized in that: comprise first module (L1), second unit (L2), the 3rd unit (L3), the 4th unit (L4) and the 5th unit (L5) successively along its optical axis direction, wherein first module (L1), second unit (L2), the 4th unit (L4) and the 5th unit (L5) are in same optical axis;
First module (L1), for having the unit group of positive refracting power, comprises the first positive lens (1), the second positive lens (2), the 3rd positive lens (3) and the 4th positive lens (4); Ray cast is assembled to the first positive lens (1) by the first positive lens (1), after the second positive lens (2) is assembled, arrive the 3rd positive lens (3) again, after the 3rd positive lens (3) is assembled, incide the 4th positive lens (4);
Second unit (L2), for having the unit group of positive refracting power, comprises the 5th positive lens (5), the first negative lens (6), the 6th positive lens (7), the 7th positive lens (8) and the 8th positive lens (9); Light enters the first negative lens (6) through the 5th positive lens (5) convergence after assembling from the 4th positive lens (4) of first module (L1), arrival the 6th positive lens (7) after the first negative lens (6) is dispersed, leaves second unit (L2) after the 6th positive lens (7), the 7th positive lens (8) and the 8th positive lens are assembled for (9) three times continuously;
3rd unit (L3), for having the unit group of positive refracting power, comprises the first catoptron (10), the second negative lens (11), the 9th positive lens (12), the tenth positive lens (13), the second catoptron (14), the 3rd catoptron (18); The lens be positioned in this unit between the first catoptron (10) and the second catoptron (14) employ twice because of light reflection, light arrives the second negative lens (11) after the first catoptron (10) reflection, the 9th positive lens (12) is entered after the second negative lens (11) is dispersed, arrival the second catoptron (14) after the 9th positive lens (12), the tenth positive lens (13) are assembled continuously, and after after the 3rd catoptron (18), leave the 3rd unit (L3);
4th unit (L4), for having the unit group of negative refracting power, comprises the 3rd negative lens (19), the 4th negative lens (20), the 5th negative lens (21), the 11 positive lens (22), the 12 positive lens (23); Light enters the 4th unit (L4) and enter the 11 positive lens (22) after the 3rd negative lens (19), the 4th negative lens (20), the dispersing continuously of the 5th negative lens (21), after the 11 positive lens (22) is assembled, arrive the 12 positive lens (23), the diaphragm of rear arrival optical system assembled by the 12 positive lens (23) to light;
5th unit (L5), for having the unit group of negative refracting power, comprises the 6th negative lens (24), the 7th negative lens (25), the 8th negative lens (26), the 9th negative lens (27), the tenth negative lens (28), the 11 negative lens (29), the 12 negative lens (30), the 13 negative lens (31), the 14 negative lens (32), image planes (33); Light enters the 4th unit (L4) arrival image planes (33) after the 6th negative lens (24), the 7th negative lens (25), the 8th negative lens (26), the 9th negative lens (27), the tenth negative lens (28), the 11 negative lens (29), the 12 negative lens (30), the 13 negative lens (31), the dispersing continuously of the 14 negative lens (32).
2. immersion ultraviolet optics system according to claim 1, it is characterized in that: the lens in described first module (L1), second unit (L2), the 3rd unit (L3), the 4th unit (L4) and the 5th unit (L5) are all monolithic mirrors, fix the relative position between each optical element with the mechanical component on optical element housing.
3. immersion ultraviolet optics system according to claim 1, is characterized in that: the optical material that the lens in described first module (L1), second unit (L2), the 3rd unit (L3), the 4th unit (L4) and the 5th unit (L5) all use is fused quartz.
4. immersion ultraviolet optics system according to claim 1, is characterized in that: the numerical aperture NA of described immersion ultraviolet optics system is 1.35, and operation wavelength is 193 nanometers, and image space is 26mm × 5.5mm.
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| CN201310062008.6A CN103149808B (en) | 2013-02-27 | 2013-02-27 | Immersed ultraviolet optical system |
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| CN201310062008.6A CN103149808B (en) | 2013-02-27 | 2013-02-27 | Immersed ultraviolet optical system |
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| CN103149808B true CN103149808B (en) | 2015-02-18 |
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| CN112927305B (en) * | 2021-02-23 | 2024-04-02 | 桂林电子科技大学 | Geometric dimension precision measurement method based on telecentricity compensation |
| CN116263565A (en) * | 2021-12-13 | 2023-06-16 | 长鑫存储技术有限公司 | Method for forming photoresist pattern and projection exposure apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1816502B1 (en) * | 2004-11-10 | 2011-06-22 | Nikon Corporation | Projection optical system, exposure equipment and exposure method |
| JP4810133B2 (en) * | 2005-06-15 | 2011-11-09 | キヤノン株式会社 | Zoom lens and imaging apparatus having the same |
| CN101349798B (en) * | 2008-08-29 | 2010-06-02 | 上海微电子装备有限公司 | Full refraction type projection objective |
| JP5799227B2 (en) * | 2010-07-15 | 2015-10-21 | パナソニックＩｐマネジメント株式会社 | Zoom lens system, interchangeable lens device and camera system |
| CN102662307B (en) * | 2012-05-02 | 2014-03-12 | 中国科学院光电技术研究所 | High-resolution projection optical system |
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