CN102768397A - Projection photoetching object lens - Google Patents
Projection photoetching object lens Download PDFInfo
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- CN102768397A CN102768397A CN2011101170858A CN201110117085A CN102768397A CN 102768397 A CN102768397 A CN 102768397A CN 2011101170858 A CN2011101170858 A CN 2011101170858A CN 201110117085 A CN201110117085 A CN 201110117085A CN 102768397 A CN102768397 A CN 102768397A
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Abstract
The invention relates to a projection photoetching object lens which sequentially comprises a first reflection unit, an optical lens system, a first lens unit, a second lens unit, a concave surface sphere reflector and a second reflection unit; wherein the first reflection unit is used for reflecting incident ray on an object plane in the optical lens system; the optical lens system comprises the first lens unit with positive focal power and the second lens unit with negative focal power; the second reflection unit is used for reflecting emergent ray of the optical lens system to an image plane, wherein the first lens and the second lens meet the following relationships: the absolute value of fG11/fG12 is more than 0.1 and less than 0.5, wherein, fG11 is focal length of the first lens unit, and fG12 is focal length of the second lens unit. The submicron projection lens can correct filed curvature and astigmatism and realize double telecentres in an objective image space; and the submicron resolution ratio can be realized, and at the same time, the object plane is parallel to the image plane so as to provide convenience for the design of a complete machine.
Description
Technical field
The present invention relates to the semiconductor lithography technical field, particularly relate to the light projection photoetching objective lens of projection optical system in a kind of semiconductor light engraving device.
Background technology
In the medium and small substrate technical field of lithography of sub-micron, adopt body bulk silicon process and surface silicon micro fabrication at present, produced some new application, as: magnetic head, printing head, devices such as accelerometer.The lithographic projection system is in the application in this field, guaranteeing imaging performance simultaneously, need control cost and offer convenience for entire machine design.
U.S. Pat 4391494 discloses the design of a kind of projection objective, and the g line that covers 400～450nm is to h line wave band, numerical aperture 0.3, and visual field height 16.8mm, it is big or small to cover 7X21mm or 8X18.3mm visual field.Its picture element is good but have certain included angle between object plane and the image planes, and this uneven object plane and image planes are that entire machine design has been brought difficulty.
Chinese patent CN200610027264 discloses a kind of projection objective design, covers the g line of 365～450nm, the h line, and i line wave band, numerical aperture 0.18, visual field height 72mm can cover 44X44mm visual field size, and be the parallel design of image face.But the numerical aperture of these object lens is littler than the United States Patent (USP), resolution limited (I explanation 2um).
Summary of the invention
The user demand of comprehensive above-mentioned background technology and cooperation mask size the object of the present invention is to provide a kind of sub-micron projection objective, can realize submicron resolution simultaneously, and object plane is parallel with image planes, for entire machine design offers convenience.
The present invention proposes a kind of light projection photoetching objective lens, comprises successively along direction of beam propagation:
One first reflection unit is with incident ray reflection entering one optical lens system on object space plane; Said optical lens system comprises: one has first lens combination of positive light coke; One has second lens combination of negative power; One concave surface spherical reflector; And
One second reflection unit gets into the reflection of the emergent ray of said optical lens system as square plane;
Wherein, relation below said first, second lens combination satisfies:
0.1＜|f
G11/f
G12|＜0.5
Wherein, f
G11: the focal length of first lens combination; f
G12: the focal length of second lens combination.
Preferably, said first lens combination is made up of at least three lens, and first lens and second lens strength are for just;
Said second lens combination is made up of the first and second sub-lens groups, and the said first sub-lens group focal power comprises a positive lens and a negative lens at least for just; The said second sub-lens group focal power is for negative;
Wherein, relation below said first, second sub-lens group of said second lens combination satisfies:
1.2＜|f
G12-1n/f
G12-2n|＜2.5
Wherein, f
G12-1n: the focal length of the first sub-lens group of second lens combination; f
G12-2n: the focal length of the second sub-lens group of second lens combination.
Wherein, the negative lens that comprises in first, second sub-lens group of said second lens combination adopts commaterial.
Preferably; The negative lens that comprises in first, second sub-lens group of said second lens combination is to adopt two kinds of different materials, and in the first sub-lens group refractive index and the Abbe number of negative lens material all greater than the refractive index and the Abbe number of negative lens material in the second sub-lens group.
Preferably, the surface of the optical lens in the said lens combination with positive light coke is sphere.
Wherein, said the one the second reflection units are prism or catoptron.
Wherein, said object space plane and said picture side plane parallel.
Sub-micron projection objective of the present invention can be proofreaied and correct the curvature of field, astigmatism, and realizes the heart two far away in image space.Can realize submicron resolution simultaneously, object plane is parallel with image planes, for entire machine design offers convenience.
Description of drawings
Can graphicly further be understood through following detailed Description Of The Invention and appended about advantage of the present invention and spirit.
Fig. 1 is a light projection photoetching objective lens optical system structure synoptic diagram of the present invention;
The rectangular field that Fig. 2 forms for light projection photoetching objective lens optical system of the present invention;
The object space of Fig. 3 light projection photoetching objective lens optical system of the present invention and picture side innermost being line far away;
The aberration curve of Fig. 4 light projection photoetching objective lens optical system of the present invention.
Embodiment
Specify specific embodiment of the present invention below in conjunction with accompanying drawing.
In the lithographic projection system, the mercury lamp light source is the light source type that ghi line wave band often uses.Mercury lamp power greatly but also exist the life-span short needs periodic replacement, and needs special power drives and lamp house heat dissipation problem.Along with the exploitation of LED lighting source, its power satisfies the demand of low dose of exposure system, possesses characteristics such as cost is low, the life-span is high, and power supply control is simple simultaneously, and part adopts led light source replacement mercury lamp light source can reduce the cost of exposure system greatly.The LED spectral purity is high, and efficient is high, but the bandwidth of spectrum is bigger, wide will the reaching about 20nm of half high power of objective lens design.
As shown in Figure 1, light projection photoetching objective lens optical system of the present invention comprises: a pair of prism P1, P2, prism P1 gets into optical lens system 10 with the incident ray reflection of object space plane R.Reflection gets into as square plane W the emergent ray of optical lens system 10 through prism P2 again.Wherein prism P1, P2 also can be reflection units such as catoptron.Object space plane R and laterally arrange as square plane W is for entire machine design offers convenience.
0.1＜|f
G11/f
G12|＜0.5
1.2＜|f
G12-1n/f
G12-2n|＜2.5
f
G11: the focal length of the first lens combination G11; f
G12: the focal length of the second lens combination G12; f
G12-1n: the focal length of the second lens combination G12, the first sub-lens group G12-1n; f
G12-2n: the focal length of the second lens combination G12, the second sub-lens group G12-2n.
The negative lens that comprises among first, second sub-lens group of second lens combination G12 G12-1n, the G12-2n can adopt commaterial.Also can adopt two kinds of different materials, and among the first sub-lens group G12-1n refractive index and the Abbe number of negative lens material all greater than the refractive index and the Abbe number of negative lens material among the second sub-lens group G12-2n.The surface of the optical lens in the above-mentioned lens combination with positive light coke is sphere.
The design is negative one times symmetrical expression design, hang down axial aberration as: coma, ratio chromatism,, distortion compensate automatically.
Table 1 is the concrete design load of photoetching projection objective lens in one embodiment of the present of invention, " STOP " expression aperture diaphragm AS, and all dimensional units all are millimeters.
Table 1 example structure
In the present embodiment, the numerical aperture of optical system is 0.3, uses the wide 20nm of h line source half high power.Visual field height 48mm can realize the rectangular field of 30mm * 15mm.
Fig. 2 is the rectangular field that optical system 10 of the present invention forms.
Fig. 3 is that object space and the picture side innermost being line far away of optical system 10 of the present invention overlaps, all less than 3mrad.
Among Fig. 4 to show that the picture element of present embodiment is proofreaied and correct situation better for the ray aberration curve of optical system 10, realized the h line+/-good picture element in the 10nm.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (8)
1. a light projection photoetching objective lens is characterized in that, comprises successively along direction of beam propagation:
One first reflection unit is with incident ray reflection entering one optical lens system on object space plane; Said optical lens system comprises:
One has first lens combination of positive light coke;
One has second lens combination of negative power;
One concave surface spherical reflector; And
One second reflection unit gets into the reflection of the emergent ray of said optical lens system as square plane;
Wherein, relation below said first, second lens combination satisfies:
0.1＜|f
G11/f
G12|＜0.5
Wherein, f
G11: the focal length of first lens combination; f
G12: the focal length of second lens combination.
2. light projection photoetching objective lens as claimed in claim 1 is characterized in that:
Said first lens combination is made up of at least three lens, and first lens of said first lens combination and second lens strength are for just.
3. light projection photoetching objective lens as claimed in claim 1 is characterized in that:
Said second lens combination is made up of the first and second sub-lens groups, and the said first sub-lens group focal power comprises a positive lens and a negative lens at least for just; The said second sub-lens group focal power is for negative;
Wherein, relation below said first, second sub-lens group of said second lens combination satisfies:
1.2＜|f
G12-1n/f
G12-2n|＜2.5
Wherein, f
G12-1n: the focal length of the first sub-lens group of second lens combination; f
G12-2n: the focal length of the second sub-lens group of second lens combination.
4. light projection photoetching objective lens as claimed in claim 3 is characterized in that: the negative lens that comprises in first, second sub-lens group of said second lens combination adopts commaterial.
5. light projection photoetching objective lens as claimed in claim 3; It is characterized in that: the negative lens that comprises in first, second sub-lens group of said second lens combination adopts two kinds of different materials, and in the first sub-lens group refractive index and the Abbe number of negative lens material all greater than the refractive index and the Abbe number of negative lens material in the second sub-lens group.
6. light projection photoetching objective lens as claimed in claim 1 is characterized in that: the surface of the optical lens in the said lens combination with positive light coke is sphere.
7. light projection photoetching objective lens as claimed in claim 1 is characterized in that: said first and second reflection units are prism or catoptron.
8. light projection photoetching objective lens as claimed in claim 1 is characterized in that: said object space plane and said picture side plane parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110117085.8A CN102768397B (en) | 2011-05-05 | 2011-05-05 | Projection photoetching object lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110117085.8A CN102768397B (en) | 2011-05-05 | 2011-05-05 | Projection photoetching object lens |
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| Publication Number | Publication Date |
|---|---|
| CN102768397A true CN102768397A (en) | 2012-11-07 |
| CN102768397B CN102768397B (en) | 2014-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110117085.8A Active CN102768397B (en) | 2011-05-05 | 2011-05-05 | Projection photoetching object lens |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015149427A1 (en) * | 2014-04-04 | 2015-10-08 | 中国科学院上海光学精密机械研究所 | Catadioptric photolithographic illumination relay lens group |
| CN114859515A (en) * | 2022-05-23 | 2022-08-05 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11329935A (en) * | 1998-05-18 | 1999-11-30 | Nikon Corp | Scanning projection aligner and optical projection system suitable therefor |
| US6157497A (en) * | 1993-06-30 | 2000-12-05 | Nikon Corporation | Exposure apparatus |
| US20050146690A1 (en) * | 2003-05-27 | 2005-07-07 | Ultratech, Inc. | Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus |
| JP2005215579A (en) * | 2004-02-02 | 2005-08-11 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| CN101216597A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Refraction and reflection projection optical system |
-
2011
- 2011-05-05 CN CN201110117085.8A patent/CN102768397B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6157497A (en) * | 1993-06-30 | 2000-12-05 | Nikon Corporation | Exposure apparatus |
| JPH11329935A (en) * | 1998-05-18 | 1999-11-30 | Nikon Corp | Scanning projection aligner and optical projection system suitable therefor |
| US20050146690A1 (en) * | 2003-05-27 | 2005-07-07 | Ultratech, Inc. | Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus |
| JP2005215579A (en) * | 2004-02-02 | 2005-08-11 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| CN101216597A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Refraction and reflection projection optical system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015149427A1 (en) * | 2014-04-04 | 2015-10-08 | 中国科学院上海光学精密机械研究所 | Catadioptric photolithographic illumination relay lens group |
| CN114859515A (en) * | 2022-05-23 | 2022-08-05 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
| CN114859515B (en) * | 2022-05-23 | 2024-01-12 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
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| Publication number | Publication date |
|---|---|
| CN102768397B (en) | 2014-11-12 |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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