CN104199173A - Single-magnification symmetric projection exposure objective - Google Patents
Single-magnification symmetric projection exposure objective Download PDFInfo
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- CN104199173A CN104199173A CN201410479916.XA CN201410479916A CN104199173A CN 104199173 A CN104199173 A CN 104199173A CN 201410479916 A CN201410479916 A CN 201410479916A CN 104199173 A CN104199173 A CN 104199173A
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Abstract
The invention discloses a single-magnification symmetric projection exposure objective which is used for imaging, copying and transferring patterns on a mask of a projection mask aligner to a silicon wafer. The projection exposure objective is a core component of the mask aligner and decides the main performance of the same. The single-magnification symmetric projection exposure objective is composed of 12 lenses which are of symmetric structure. The resolving power of the lenses is equal to 2.5 mu m, the magnification is equal to -1, and the area of the exposure view field is equal to 15mm*15mm. The projection exposure objective is particularly composed of a first lens group, a diaphragm and a second lens group; the first lens group and the second lens group are in symmetrical distribution relative to the diaphragm. The conjugate distance of the projection exposure objective is equal to 500 mm, so that the projection exposure objective system is of compact structure. Since glass material having high transmittance to i-line (365 nm) is used, system optical transmittance is improved, and requirements for high precision and high yield of the projection mask aligner are met.
Description
Technical field
The one list multiplying power projection exposure object lens that the present invention relates to, for based on digital micro-mirror array (DMD) without mask projection mask aligner, belong to microelectronic device and micro processing field.
Background technology
The fast development of the microelectric technique taking large scale integrated circuit as core, has proposed new requirement to microelectronic device and Micrometer-Nanometer Processing Technology.Release the business-like projection aligner of First from the U.S. in 1978, the Micrometer-Nanometer Processing Technology that optical projection printing is the widest as application, technology innovation is fast and vitality is strong, is the core that drives microelectric technique progress.Projection mask aligner is by the figure on mask, and through projection objective, imaging is replicated on silicon chip face.The development of large scale integrated circuit, requires on larger area chip, to hold more and more meticulousr lines, and high-precision litho machine demand increases day by day, and the making precision of mask becomes the key factor that affects litho machine performance.Maskless photoetching machine based on digital micro-mirror array (DMD) has without mask, simple in structure, cost is low and the advantage such as high resolution, is applied to modern micro processing field.In maskless photoetching machine, the emergent light that projection objective is controlled DMD is imaged onto silicon chip surface, can complete the processing and fabricating of different structure size by controlling the emergent light of DMD.Projection objective is subject to DMD size restrictions, its less but claimed structure compactness in exposure visual field, and the object-image conjugate of projection objective is apart from less; And the enlargement ratio design of the projection objective 1 times of left and right that adopts low numerical aperture more.
At present, for the projection objective of 1 times of left and right enlargement ratio, for avoiding system aberration and reducing system conjugate distance, adopt transmitting mirror structural design object lens.US Patent No. 7158215 is introduced a kind of refraction-reflection type 1
×enlargement ratio photoetching projection objective lens system, is made up of primary mirror concavees lens, the recessed catoptron of secondary mirror and bent moon refractor.US Patent No. 7148953 introduced another 1
×the refraction-reflection type photoetching projection objective lens of enlargement ratio, is made up of a refractor group, concave mirror and two prisms of turning back.In projection objective, adopt catoptron, can effectively reduce bore and the conjugate distance of projection objective, reduce object lens number; But reflection configuration is especially from shaft type reflection configuration, and processing and assembling are more difficult.
Full refraction type projection objective is because its assembly difficulty is lower, can have larger image side's working distance and change system NA not cause that the advantages such as vignetting are used widely.Chinese patent CN102200624A has introduced a kind of light projection photoetching objective lens of 1 times of amplification.The service band of this objective system is gh line, is made up of altogether 18 lens, wherein comprises 4 aspheric surfaces.This projection objective design cost and difficulty of processing are higher.
US Patent No. 2009080086A provides the projection objective of one group of numerical aperture NA by 0.02-0.25.These group projection exposure object lens all adopt symmetrical structure, and object lens first half and latter half are about diaphragm symmetry, and enlargement ratio is-1, and exposure half field-of-view is 50mm.This projection objective system has non-spherical lens equally, and processing and manufacturing difficulty is larger.
Jap.P. JP2002072080A introduces one group by 32 lens and 4 large area projection exposure object lens that aspheric surface forms, and system NA is 0.145, and exposure visual field is 100 × 100mm.This objective lens design and processing cost are higher equally.
In general, 1 of current report
×light projection photoetching objective lens, is used for the photoetching of large-area flat-plate display.For the imaging demand of DMD lithographic equipment high resolution, shorter conjugate distance, the present invention introduces a kind of light projection photoetching objective lens of symmetrical structure, meets its imaging designing requirement.
Summary of the invention
Picture element for DMD maskless photoetching machine to light projection photoetching objective lens and system dimension requirement, the present invention is intended to design one group of projection objective, meets high precision maskless photoetching machine demand.The object of the invention is to utilize simple lens imaging, distortion, astigmatism, the curvature of field and the aberration etc. of synchronous correction system; Meanwhile, system conjugate distance is shorter, simple and compact for structure.
The technical solution used in the present invention is: a kind of single multiplying power symmetrical expression projection exposure object lens, the magnification error and the alignment error that cause due to change in location for reducing mask and silicon chip, and complete the coaxial alignment of mask and silicon chip, projection optical system adopts double telecentric structure, and object lens object space is parallel with optical axis with image space chief ray; Two parts lens combination I and lens combination II before and after projection objective system is divided into, diaphragm is positioned at lens combination I and lens combination II confocal; Lens combination I and lens combination II are symmetrical with respect to diaphragm, are made up of respectively the first negative lens 1, the first positive lens 2, the second positive lens 3, the 3rd positive lens 4, the 4th positive lens 5 and the second negative lens 6.
Single times of described projection objective, is characterized in that: the first negative lens 1 being symmetric is plano-concave negative lens, the 1st of objective system and be backmost plane.
Described single multiplying power projection exposure object lens, is characterized in that objective system is at least made up of 12 lens: objective system is about diaphragm symmetry, and system enlargement ratio is-1.Concrete, for meeting the requirement of system enlargement ratio, lens combination I and lens combination II meet:
0.992<f
I/f
II<1.008
Wherein, f
iand f
iIbe respectively the focal length of front lens group I and rear lens group II.
Described single multiplying power projection exposure object lens, is characterized in that: the operation wavelength of objective system is 365 ± 3nm, select the material corrective system aberration of different dispersion characteristics, concrete:
1) the first negative lens 1, the first positive lens 2 and the second positive lens 3 adopt conventional crown glass, and its material behavior is:
1.51<N
d1～3<1.53
60.16<V
d1～3<66.02
Wherein, N
d1～3be respectively the refractive index of the first negative lens 1, the first positive lens 2 and the second positive lens 3; V
d1～3for its corresponding abbe number;
2) the 3rd positive lens 4 and the 4th positive lens 5 adopt light crown glass, and its material behavior is:
1.47<N
d4～5<1.49
65.59<V
d4～5<70.04
Wherein, N
d4～5be respectively the refractive index of the 3rd positive lens 4 and the 4th positive lens 5; V
d4～5for its corresponding abbe number;
3) the second negative lens 6 adopts light flint, and its material behavior meets:
1.55<N
d6<1.59
39.18<V
d6<48.76
Wherein, N
d6it is the refractive index of the second negative lens 6; V
d6for its corresponding abbe number.
Described single multiplying power projection exposure object lens, is characterized in that: projection objective object-image conjugate is apart from being 500mm, and system overall length is 500mm, compact conformation; Object space and image space working distance are greater than 90mm, for follow-up system structural design reserves enough spaces.For meeting system requirements, projection objective structure meets:
f
I～II<160
Described single multiplying power projection exposure object lens, is characterized in that: numerical aperture of projection objective NA is 0.12, resolving power is 2.5 μ m; Exposure visual field is 15mm × 15mm; Be better than ± 5 μ m of the curvature of field; Be better than ± 0.05 μ m of distortion, meets litho machine demand.
The present invention's advantage is compared with prior art:
(1) two groups of lens of employing symmetrical expression, with the higher system imaging picture element of less lens acquisition.
(2) adopt conventional optical glass material, save production and the assembly cost of optical system.
(3) system architecture compactness, the object-image conjugate distance of projection objective is that system total length is no more than 500mm, there is larger image side's working distance simultaneously, for the Interface design of follow-up projection objective and illuminator, mask and silicon chip system reserves enough spaces, meet litho machine entirety assembling demand.
Brief description of the drawings
Single multiplying power projection exposure object lens specific constructive form of the present invention and picture element characteristic are further elaborated with accompanying drawing form:
Fig. 1 is the optical texture schematic diagram of projection exposure object lens of the present invention.
Fig. 2 is the curvature of field (a) and distortion (b) schematic diagram of projection objective system of the present invention.
Fig. 3 is projection objective aberration curve schematic diagram of the present invention.
Fig. 4 is projection objective wave aberration schematic diagram of the present invention.
Fig. 5 is object space and the image space heart degree far away schematic diagram of projection objective of the present invention.
MTF curve when Fig. 6 is projection objective of the present invention out of focus ± 10 μ m.
Embodiment
The present invention aims to provide a kind of single multiplying power projection exposure object lens, for i Lithography machine.To specific embodiment of the invention, measure elaborates by reference to the accompanying drawings.
According to the requirement of high precision projection mask aligner, projection objective optical index of the present invention requires as follows:
● operation wavelength: 365 ± 3nm
● resolving power: 2.5 μ m
● numerical aperture NA:0.12
● enlargement ratio: 1
×
● exposure visual field: 15mm × 15mm
● object-image conjugate distance: be less than 500mm
● object space working distance: be greater than 90mm
● image space working distance: be greater than 90mm
Projection objective of the present invention adopts double telecentric structure, and objective system is made up of 12 lens.Of the present invention be projection objective structure as shown in Figure 1.Two parts lens combination I and lens combination II before and after projection objective system is divided into, diaphragm is positioned at lens combination I and II confocal; Lens combination I and lens combination II are symmetrical with respect to diaphragm, are made up of respectively the first negative lens 1, the first positive lens 2, the second positive lens 3, the 3rd positive lens 4, the 4th positive lens 5 and the second negative lens 6.
Single times of described projection objective, is characterized in that: the first negative lens 1 being symmetric is plano-concave negative lens, the 1st of objective system and be backmost plane.
Described single multiplying power projection exposure object lens, is characterized in that objective system is at least made up of 12 lens: objective system is about diaphragm symmetry, and system enlargement ratio is-1.Concrete, for meeting the requirement of system enlargement ratio, lens combination I and lens combination II meet:
0.992<f
I/f
II<1.008
Wherein, f
iand f
iIbe respectively the focal length of front lens group I and rear lens group II.
Described single multiplying power projection exposure object lens, is characterized in that: the operation wavelength of objective system is 365 ± 3nm, select the material corrective system aberration of different dispersion characteristics, concrete:
1) the first negative lens 1, the first positive lens 2 and the second positive lens 3 adopt conventional crown glass, and its material behavior is:
1.51<N
d1～3<1.53
60.16<V
d1～3<66.02
Wherein, N
d1～3be respectively the refractive index of the first negative lens 1, the first positive lens 2 and the second positive lens 3; V
d1～3for its corresponding abbe number;
2) the 3rd positive lens 4 and the 4th positive lens 5 adopt light crown glass, and its material behavior is:
1.47<N
d4～5<1.49
65.59<V
d4～5<70.04
Wherein, N
d4～5be respectively the refractive index of the 3rd positive lens 4 and the 4th positive lens 5; V
d4～5for its corresponding abbe number;
3) the second negative lens 6 adopts light flint, and its material behavior meets:
1.55<N
d6<1.59
39.18<V
d6<48.76
Wherein, N
d6it is the refractive index of the second negative lens 6; V
d6for its corresponding abbe number.
Described single multiplying power projection exposure object lens, is characterized in that: projection objective object-image conjugate is apart from being 500mm, and system overall length is 500mm, compact conformation; Object space and image space working distance are greater than 90mm, for follow-up system structural design reserves enough spaces.For meeting system requirements, projection objective structure meets:
f
I～II<160
Particularly, for ensureing the system transmitance aberration of corrective system simultaneously, projection objective is made up of symmetrical front lens group I and rear lens group II: plano-concave negative lens 1, biconvex positive lens 2 and biconvex positive lens 3 are selected crown glass K9; Biconvex positive lens 4 and biconvex positive lens 5 are selected light crown glass QK3; Double-concave negative lens 6 is selected light flint QF5.Design result is as shown in Table 1:
Form 1
| Sequence number | Face type | Radius | Thickness | Material | Semi-Diameter |
| 0 | Sphere | inf | 90.610 | ? | 10.90179868 |
| 1 | Sphere | inf | 18.734 | H-K9L | 21.33118368 |
| 2 | Sphere | 118.7065 | 3.736 | ? | 22.89751294 |
| 3 | Sphere | 168.2492 | 24.380 | H-K9L | 23.62776011 |
| 4 | Sphere | -158.8027 | 24.587 | ? | 25.58927879 |
| 5 | Sphere | 429.3494 | 4.834 | H-K9L | 27.20528838 |
| 6 | Sphere | -383.5791 | 12.160 | ? | 27.25301305 |
| 7 | Sphere | 50.5601 | 11.183 | H-QK3 | 26.96430223 |
| 8 | Sphere | -885.0077 | 0.561 | ? | 26.32946373 |
| 9 | Sphere | 61.6790 | 11.109 | H-QK3 | 24.27606136 |
| 10 | Sphere | -3458.7982 | 6.850 | ? | 22.01417182 |
| 11 | Sphere | -130.0322 | 10.037 | QF5 | 18.5207723 |
| 12 | Sphere | 30.2201 | 29.951 | ? | 14.4171144 |
| 13 | Sphere | inf | 29.360 | ? | 11.30236898 |
| 14 | Sphere | -30.2201 | 10.037 | QF5 | 14.39350729 |
| 15 | Sphere | 130.0322 | 6.866 | ? | 18.50343997 |
| 16 | Sphere | 3458.7982 | 11.109 | H-QK3 | 22.01707089 |
| 17 | Sphere | -61.6790 | 0.519 | ? | 24.28260421 |
| 18 | Sphere | 885.0077 | 11.183 | H-QK3 | 26.32868237 |
| 19 | Sphere | -50.5601 | 11.424 | ? | 26.96532693 |
| 20 | Sphere | 383.5791 | 4.834 | H-K9L | 27.26422858 |
| 21 | Sphere | -429.3494 | 28.284 | ? | 27.2184608 |
| 22 | Sphere | 158.8027 | 24.380 | H-K9L | 25.4175202 |
| 23 | Sphere | -168.2492 | 3.226 | ? | 23.4725147 |
| 24 | Sphere | -118.7065 | 18.734 | H-K9L | 22.86945558 |
| 25 | Sphere | inf | 91.312 | ? | 21.33003074 |
| 26 | Sphere | inf | 0.000 | ? | 11.00248682 |
Fig. 2 is the curvature of field and the distortion of projection objective system, shows that the curvature of field of this projection objective system is better than ± 5 μ m, and distortion is better than 0.02 μ m.
Wave aberration curve shown in projection objective aberration curve shown in Fig. 3 and Fig. 4 shows, projection objective system has good picture element, be better than ± 0.25 λ of wave aberration.
Projection objective object space shown in Fig. 5 and image space heart degree far away is better than 0.5 °, meets the error requirement in litho machine alignment and alignment procedures.
MTF curve shown in Fig. 6 shows, MTF >=0.4 of objective system when the μ m of out of focus ± 10, and system has good picture element.
Generally, single multiplying power projection exposure object lens of the present invention, have higher picture element.In design process, the aberrations such as the multiplying power of complex optimum projection objective, aberration, the curvature of field, distortion and wave aberration, meet high precision litho machine demand.The design example that the present invention describes in detail is only for advantage of the present invention and rationality are described, all projection objective examples taking technical solution of the present invention as Optimization Design of Foundation all belong to category of the present invention.The new application that the present invention does not elaborate belongs to the known technology of field personnel of the present invention.
Claims (6)
1. single multiplying power symmetrical expression projection exposure object lens, is characterized in that: these projection exposure object lens adopt double telecentric structure, and object lens object space is parallel with optical axis with image space chief ray; Two parts lens combination I and lens combination II before and after projection objective system is divided into, diaphragm is positioned at lens combination I and lens combination II confocal; Lens combination I and lens combination II are symmetrical with respect to diaphragm, are made up of successively the first negative lens (1), the first positive lens (2), the second positive lens (3), the 3rd positive lens (4), the 4th positive lens (5) and the second negative lens (6).
2. single multiplying power symmetrical expression projection exposure object lens according to claim 1, is characterized in that: the negative lens (1) being symmetric is plano-concave negative lens, the 1st of objective system and be backmost plane.
3. single multiplying power symmetrical expression projection exposure object lens according to claim 1, it is characterized in that: the objective system of lens combination I and lens combination II composition is at least made up of 12 lens: lens combination I and lens combination II are about diaphragm symmetry, the system enlargement ratio of lens combination I and lens combination II composition is-1, concrete, for meeting the requirement of system enlargement ratio, lens combination I and lens combination II meet:
0.992<f
I/f
II<1.008
Wherein, f
iand f
iIbe respectively the focal length of lens combination I and lens combination II.
4. single multiplying power symmetrical expression projection exposure object lens according to claim 1, is characterized in that: the operation wavelength of the objective system of lens combination I and lens combination II composition is 365 ± 3nm, selects the material corrective system aberration of different dispersion characteristics, concrete:
1) the first negative lens (1), the first positive lens (2) and the second positive lens (3) adopt conventional crown glass, and its material behavior is:
1.51<N
d1～3<1.53
60.16<V
d1～3<66.02
Wherein, N
d1～3be respectively the refractive index of the first negative lens (1), the first positive lens (2) and the second positive lens (3); V
d1～3for its corresponding abbe number;
2) the 3rd positive lens (4) and the 4th positive lens (5) adopt light crown glass, and its material behavior is:
1.47<N
d4～5<1.49
65.59<V
d4～5<70.04
Wherein, N
d4～5be respectively the refractive index of the 3rd positive lens (4) and the 4th positive lens (5); V
d4～5for its corresponding abbe number;
3) the second negative lens (6) adopts light flint, and its material behavior meets:
1.55<N
d6<1.59
39.18<V
d6<48.76
Wherein, N
d6it is the refractive index of the second negative lens (6); V
d6for its corresponding abbe number.
5. single multiplying power symmetrical expression projection exposure object lens according to claim 1, is characterized in that: projection objective object-image conjugate is apart from being 500mm, and system overall length is 500mm, compact conformation; Object space and image space working distance are greater than 90mm, and for follow-up system structural design reserves enough spaces, for meeting system requirements, projection objective structure meets:
f
I～II<160。
6. single multiplying power symmetrical expression projection exposure object lens according to claim 1, is characterized in that: numerical aperture of projection objective NA is 0.12, and resolving power is 2.5 μ m; Exposure visual field is 15mm × 15mm; Be better than ± 5 μ m of the curvature of field; Be better than ± 0.05 μ m of distortion, meets litho machine demand.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479916.XA CN104199173B (en) | 2014-09-19 | 2014-09-19 | A kind of single multiplying power symmetrical expression projection exposure object lens |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479916.XA CN104199173B (en) | 2014-09-19 | 2014-09-19 | A kind of single multiplying power symmetrical expression projection exposure object lens |
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| Publication Number | Publication Date |
|---|---|
| CN104199173A true CN104199173A (en) | 2014-12-10 |
| CN104199173B CN104199173B (en) | 2017-06-13 |
Family
ID=52084481
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|---|---|---|---|
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259740A (en) * | 2015-12-01 | 2016-01-20 | 中国科学院光电技术研究所 | Haploid double telecentric photoetching projection lens for photoetching system |
| CN109656102A (en) * | 2018-12-17 | 2019-04-19 | 德淮半导体有限公司 | Photoetching efficiency-adjusted method, apparatus, server and computer readable storage medium |
| CN112415865A (en) * | 2020-12-01 | 2021-02-26 | 中国科学院光电技术研究所 | Single-rate large-view-field projection exposure objective lens applied to projection photoetching machine |
| CN113568281A (en) * | 2021-07-29 | 2021-10-29 | 中国科学院光电技术研究所 | Large-view-field projection exposure objective lens system applied to projection photoetching machine |
| CN113607664A (en) * | 2021-07-14 | 2021-11-05 | 天津大学 | Spectrum type electroplating solution concentration detection method based on symmetrical transceiver group |
| US20210364735A1 (en) * | 2017-08-11 | 2021-11-25 | Ningbo Sunny Opotech Co., Ltd. | Lens assembly, camera module and method for assembling same |
| CN114859515A (en) * | 2022-05-23 | 2022-08-05 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
| CN118033878A (en) * | 2024-04-11 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | Double telecentric image position alignment measuring lens for micro-nano manufacturing technology |
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| US20020191169A1 (en) * | 2001-03-28 | 2002-12-19 | Ryoko Otomo | Projection optical system and projection and light exposure apparatus using it |
| JP2010139839A (en) * | 2008-12-12 | 2010-06-24 | Mejiro Precision:Kk | Projection optical system |
| CN102645749A (en) * | 2012-04-21 | 2012-08-22 | 张家港鹏博光电科技有限公司 | Magnification regulating method of projection optical system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020191169A1 (en) * | 2001-03-28 | 2002-12-19 | Ryoko Otomo | Projection optical system and projection and light exposure apparatus using it |
| JP2010139839A (en) * | 2008-12-12 | 2010-06-24 | Mejiro Precision:Kk | Projection optical system |
| CN102645749A (en) * | 2012-04-21 | 2012-08-22 | 张家港鹏博光电科技有限公司 | Magnification regulating method of projection optical system |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259740A (en) * | 2015-12-01 | 2016-01-20 | 中国科学院光电技术研究所 | Haploid double telecentric photoetching projection lens for photoetching system |
| US20210364735A1 (en) * | 2017-08-11 | 2021-11-25 | Ningbo Sunny Opotech Co., Ltd. | Lens assembly, camera module and method for assembling same |
| CN109656102A (en) * | 2018-12-17 | 2019-04-19 | 德淮半导体有限公司 | Photoetching efficiency-adjusted method, apparatus, server and computer readable storage medium |
| CN109656102B (en) * | 2018-12-17 | 2021-06-25 | 德淮半导体有限公司 | Photoetching efficiency adjusting method, device, server and computer readable storage medium |
| CN112415865A (en) * | 2020-12-01 | 2021-02-26 | 中国科学院光电技术研究所 | Single-rate large-view-field projection exposure objective lens applied to projection photoetching machine |
| CN112415865B (en) * | 2020-12-01 | 2023-11-17 | 中国科学院光电技术研究所 | Single-magnification large-view-field projection exposure objective lens applied to projection lithography machine |
| CN113607664A (en) * | 2021-07-14 | 2021-11-05 | 天津大学 | Spectrum type electroplating solution concentration detection method based on symmetrical transceiver group |
| CN113568281A (en) * | 2021-07-29 | 2021-10-29 | 中国科学院光电技术研究所 | Large-view-field projection exposure objective lens system applied to projection photoetching machine |
| CN113568281B (en) * | 2021-07-29 | 2023-10-03 | 中国科学院光电技术研究所 | Large-view-field projection exposure objective lens system applied to projection lithography machine |
| CN114859515A (en) * | 2022-05-23 | 2022-08-05 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
| CN114859515B (en) * | 2022-05-23 | 2024-01-12 | 张家港中贺自动化科技有限公司 | Catadioptric objective optical system for projection lithography and projection lithography system |
| CN118033878A (en) * | 2024-04-11 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | Double telecentric image position alignment measuring lens for micro-nano manufacturing technology |
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