CN109375480B - Photoetching projection objective and photoetching machine - Google Patents

Photoetching projection objective and photoetching machine Download PDF

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CN109375480B
CN109375480B CN201811648523.1A CN201811648523A CN109375480B CN 109375480 B CN109375480 B CN 109375480B CN 201811648523 A CN201811648523 A CN 201811648523A CN 109375480 B CN109375480 B CN 109375480B
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lens
lens group
projection objective
group
lenses
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CN109375480A (en
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张羽
安福平
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design

Abstract

An embodiment of the present invention provides a lithography projection objective including a first lens group, a second lens group, and a second lens group sequentially arranged along an optical axisThe zoom lens comprises three lens groups, a diaphragm, a fourth lens group, a fifth lens group and a sixth lens group, wherein the first lens group and the sixth lens group are symmetrical about the diaphragm, and the second lens group and the fifth lens group are symmetrical about the diaphragm; the third lens group and the fourth lens group are symmetric about the stop;
Figure DDA0001932494120000011
wherein f is1Is the focal length of the first lens group and the sixth lens group, f2Is the focal length of the second lens group and the fifth lens group, f3Is the focal length of the third lens group and the fourth lens group. According to the photoetching projection objective lens provided by the embodiment of the invention, the number of lenses is reduced by adopting the spherical lens, the processing and manufacturing cost is reduced, the numerical aperture is increased, the photoetching projection objective lens is suitable for a ghi three-line wave band, the application scene of the projection objective lens is expanded, and the resolution of a photoetching machine is improved.

Description

Photoetching projection objective and photoetching machine
Technical Field
The embodiment of the invention relates to the lithography technology, in particular to a lithography projection objective and a lithography machine.
Background
Integrated circuits are manufactured by projection exposure devices by means of which patterns with different mask patterns are imaged onto a substrate, such as a silicon wafer or L CD plate, for manufacturing a range of structures such as integrated circuits, thin film magnetic heads, liquid crystal display panels, or micro-electro-mechanical systems (MEMS).
The existing photoetching projection objective has the problems of small numerical aperture, low resolution, narrow applicable waveband, invariable numerical aperture, high processing and manufacturing cost of the common aspheric lens and the like, and no document or product discloses the prior art which can simultaneously solve the problems.
Disclosure of Invention
The embodiment of the invention provides a photoetching projection objective and a photoetching machine, which are used for solving the problems in the prior art.
In a first aspect, embodiments of the present invention provide a lithographic projection objective comprising, in order along an optical axis, a first lens group, a second lens group, a third lens group, a stop, a fourth lens group, a fifth lens group, and a sixth lens group, the first lens group and the sixth lens group being symmetric about the stop, the second lens group and the fifth lens group being symmetric about the stop; the third lens group and the fourth lens group are symmetric about the stop;
Figure GDA0002491350690000021
wherein f is1Is the focal length of the first lens group and the sixth lens group, f2Is the focal length of the second lens group and the fifth lens group, f3Is the focal length of the third lens group and the fourth lens group.
Optionally, the first lens group and the sixth lens group have positive power, the second lens group and the fifth lens group have negative power, and the third lens group and the fourth lens group have positive power.
Optionally, all lenses of the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group, and the sixth lens group are spherical lenses.
Optionally, the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group and the sixth lens group each comprise at least one meniscus lens.
Optionally, the first lens group comprises 4 lenses and the second lens group comprises 2 lenses; the third lens group includes 4 lenses;
the fourth lens group includes 4 lenses; the fifth lens group includes 2 lenses; the sixth lens group includes 4 lenses.
Optionally, the first lens group includes a first lens, a second lens, a third lens and a fourth lens arranged in sequence along an optical axis; the first lens is a biconcave lens, the second lens and the third lens are meniscus lenses, and the fourth lens is a biconvex lens;
the sixth lens group comprises a seventeenth lens, an eighteenth lens, a nineteenth lens and a twentieth lens which are sequentially arranged along an optical axis; the seventeenth lens is a biconvex lens, the eighteenth lens and the nineteenth lens are meniscus lenses, and the twentieth lens is a biconcave lens.
Optionally, the second lens group includes a fifth lens and a sixth lens arranged in sequence along the optical axis; the fifth lens is a meniscus lens, and the sixth lens is a biconcave lens;
the fifth lens group comprises a fifteenth lens and a sixteenth lens which are sequentially arranged along an optical axis; the fifteenth lens is a biconcave lens and the sixteenth lens is a meniscus lens.
Optionally, the third lens group includes a seventh lens, an eighth lens, a ninth lens, and a tenth lens arranged in order along the optical axis; the seventh lens element is a meniscus lens element, the eighth lens element and the tenth lens element are biconvex lens elements, and the ninth lens element is a biconcave lens element; the fourth lens group comprises an eleventh lens, a twelfth lens, a thirteenth lens and a fourteenth lens which are sequentially arranged along an optical axis; the eleventh lens element and the thirteenth lens element are biconvex lenses, the twelfth lens element is a biconcave lens, and the fourteenth lens element is a meniscus lens.
Optionally, the maximum image-side numerical aperture of the lithographic projection objective under i-line band illumination is 0.18.
Optionally, the maximum image-side numerical aperture of the lithographic projection objective under illumination of i-line band, h-line band and g-line band is 0.14.
Optionally, the exposure field of view of the lithographic projection objective is 62.934mm in diameter.
In a second aspect, an embodiment of the present invention provides a lithography machine, including: a lithographic projection objective as claimed in the first aspect.
The embodiment of the invention provides a photoetching projection objective lens which comprises a first lens group, a second lens group and a third lens group, and a diaphragm which is connected with the first lens group, the second lens group and the third lens groupThe lens group comprises a fourth lens group, a fifth lens group and a sixth lens group which are symmetrically arranged. The numerical aperture of the photoetching projection objective can be adjusted by adjusting the size of the light through hole of the diaphragm, so that the capability of the photoetching projection objective for being suitable for different scenes is improved. And the focal length f of the first lens group1Focal length f of the second lens group2Satisfy the requirement of
Figure GDA0002491350690000031
Focal length f of the second lens group2Focal length f of the third lens group3Satisfy the requirement of
Figure GDA0002491350690000041
Therefore, the numerical aperture of the photoetching projection objective lens is increased, and the resolution of the photoetching projection objective lens is improved. The photoetching projection objective lens provided by the embodiment of the invention can be suitable for an i-line waveband, an h-line waveband and a g-line waveband, and the applicable waveband is wide. The lenses in the embodiment of the invention are all spherical lenses, and the number of the lenses is only 20, so that the processing cost of the lenses in the photoetching projection objective is reduced, the processing period of the lenses is shortened, and the assembly and adjustment efficiency of the photoetching projection objective is improved.
Drawings
FIG. 1 is a schematic diagram of a lithographic projection objective according to an embodiment of the present invention;
FIG. 2 is a diagram of a meridional aberration distribution at a pupil of a lithographic projection objective at a field-of-view point height of 1 with respect to an object under 365nm illumination;
FIG. 3 is a sagittal aberration diagram of a lithographic projection objective at a pupil with a relative object field-of-view point height of 1 under 365nm illumination;
FIG. 4 is a diagram of a meridional aberration distribution at a pupil of a lithographic projection objective at a relative object field-of-view point height of 0.89 under 365nm illumination;
FIG. 5 is a sagittal aberration diagram at the pupil of a lithographic projection objective at 365nm illumination with a relative object field-of-view point height of 0.89;
FIG. 6 is a meridional aberration distribution plot at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.67 under 365nm illumination;
FIG. 7 is a sagittal aberration diagram at the pupil of a lithographic projection objective at 365nm illumination with a relative object field-of-view point height of 0.67;
FIG. 8 is a vertical axis aberration diagram of a lithographic projection objective under 365nm illumination;
FIG. 9 is a stereogram of an object image of a lithographic projection objective under 365nm illumination;
FIG. 10 is a diagram of a meridional aberration distribution at a pupil of a lithographic projection objective at a relative object field-of-view point height of 1 under 365nm, 405nm and 436nm illumination;
FIG. 11 is a sagittal aberration diagram at the pupil of a photoetching projection objective under 365nm, 405nm and 436nm illumination and with a relative object space field-of-view point height of 1;
FIG. 12 is a diagram of a meridional aberration distribution at a pupil for a lithographic projection objective at a relative object field-of-view point height of 0.89 at 365nm, 405nm, and 436nm illumination;
FIG. 13 is a sagittal aberration profile at a pupil for a lithographic projection objective having a relative object field-of-view point height of 0.89 at 365nm, 405nm and 436nm illumination;
FIG. 14 is a diagram of a meridional aberration distribution at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.67 under 365nm, 405nm and 436nm illumination;
FIG. 15 is a sagittal aberration profile at the pupil for a lithographic projection objective at 365nm, 405nm, and 436nm illumination with a relative object field-of-view point height of 0.67;
FIG. 16 is a graph of homeotropic chromatic aberration of a lithographic projection objective under 365nm, 405nm and 436nm illumination;
FIG. 17 is a object image side telecentricity diagram of a lithographic projection objective under 365nm, 405nm and 436nm illumination.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
FIG. 1 is a drawing of the present inventionThe embodiment provides a structural schematic diagram of a lithography projection objective, referring to fig. 1, the lithography projection objective comprises a first lens group G1, a second lens group G2, a third lens group G3, a STOP, a fourth lens group G4, a fifth lens group G5 and a sixth lens group G6 which are sequentially arranged along an optical axis, the first lens group G1 and the sixth lens group G6 are symmetrical about the STOP, the second lens group G2 and the fifth lens group G5 are symmetrical about the STOP, and the third lens group G3 and the fourth lens group G4 are symmetrical about the STOP. The first lens group G1 corrects spherical aberration, astigmatism, and curvature of field associated with the field distribution, the second lens group G2 is matched to compensate for aberrations generated by the first lens group G1 and the third lens group G3, the third lens group G3 corrects chromatic aberration, constant term spherical aberration, and astigmatism, the fourth lens group G4, the fifth lens group G5, and the sixth lens group G6 are symmetric with respect to the STOP with the first lens group G1, the second lens group G2, and the third lens group G3, respectively, and the fourth lens group G4, the fifth lens group G5, and the sixth lens group G6 may compensate for coma and distortion generated by the first lens group G1, the second lens group G2, and the third lens group G3, respectively. The lithography projection objective satisfies the formula:
Figure GDA0002491350690000061
Figure GDA0002491350690000062
wherein f is1Is the focal length of the first lens group G1 and the sixth lens group G6, f2Is the focal length of the second lens group G2 and the fifth lens group G5, f3Is the focal length of the third lens group G3 and the fourth lens group G4.
The embodiment of the invention provides a photoetching projection objective lens which comprises a first lens group, a second lens group, a third lens group, a fourth lens group, a fifth lens group and a sixth lens group, wherein the fourth lens group, the fifth lens group and the sixth lens group are symmetrically arranged with the first lens group, the second lens group and the third lens group relative to a diaphragm. The numerical aperture of the photoetching projection objective can be adjusted by adjusting the size of the light through hole of the diaphragm, so that the capability of the photoetching projection objective for being suitable for different scenes is improved. And the focal length f of the first lens group1Focal length f of the second lens group2Satisfy the requirement of
Figure GDA0002491350690000063
Focal length f of the second lens group2Focal length f of the third lens group3Satisfy the requirement of
Figure GDA0002491350690000064
Therefore, the numerical aperture of the photoetching projection objective lens is increased, and the resolution of the photoetching projection objective lens is improved. The photoetching projection objective lens provided by the embodiment of the invention can be suitable for an i-line waveband, an h-line waveband and a g-line waveband, and the applicable waveband is wide. The lenses in the embodiment of the invention can be all spherical lenses, and the number of the lenses is less than 20, so that the processing cost of the lenses in the photoetching projection objective lens is reduced, the processing period of the lenses is shortened, and the assembly and adjustment efficiency of the photoetching projection objective lens is improved.
Alternatively, referring to fig. 1, the first lens group G1 and the sixth lens group G6 have positive power, the second lens group G2 and the fifth lens group G5 have negative power, and the third lens group G3 and the fourth lens group G4 have positive power. The power, which is equal to the difference between the image-side and object-side beam convergence, characterizes the ability of the optical system to deflect light. The larger the absolute value of the focal power is, the stronger the bending ability to the light ray is, and the smaller the absolute value of the focal power is, the weaker the bending ability to the light ray is. When the focal power is positive, the refraction of the light is convergent; when the focal power is negative, the refraction of the light is divergent. The focal power can be suitable for representing a certain refractive surface of one lens, can be suitable for representing a certain lens, and can also be suitable for representing a system formed by a plurality of lenses together.
Alternatively, referring to fig. 1, all lenses of the first lens group G1, the second lens group G2, the third lens group G3, the STOP, the fourth lens group G4, the fifth lens group G5, and the sixth lens group G6 are spherical lenses. Spherical lenses are lenses that have a constant curvature from the center to the edge of the lens, both refractive surfaces of a spherical lens are spherical, while aspherical lenses have a continuously changing curvature from the center to the edge, so that spherical lenses are easier to process than aspherical lenses. The lenses in the embodiment of the invention are all spherical lenses, so that the processing cost of the lenses in the photoetching projection objective is reduced, the processing period of the lenses is shortened, and the assembly and adjustment efficiency of the photoetching projection objective is improved.
Alternatively, referring to fig. 1, the first lens group G1, the second lens group G2, the third lens group G3, the STOP, the fourth lens group G4, the fifth lens group G5, and the sixth lens group G6 each include at least one meniscus lens. The meniscus lens is generally composed of two spherical surfaces with small radii of curvature and little numerical difference, and the meniscus lens takes a crescent shape and is used for correcting aberration. At least one meniscus lens is arranged in all the lens groups, which is favorable for correcting aberration.
Alternatively, referring to fig. 1, the first lens group G1 includes 4 lenses, the second lens group G2 includes 2 lenses, and the third lens group G3 includes 4 lenses. Since the fourth lens group G4, the fifth lens group G5, and the sixth lens group G6 are symmetric with the first lens group G1, the second lens group G2, and the third lens group G3, respectively, with respect to the STOP, the fourth lens group G4 includes 4 lenses, the fifth lens group G5 includes 2 lenses, and the sixth lens group G6 includes 4 lenses, respectively. In an embodiment of the invention, the lithographic projection objective comprises a total of 20 lenses. It should be noted that in other embodiments, the lithographic projection objective may also comprise other numbers of lenses, as long as this is satisfactory
Figure GDA0002491350690000081
And (4) finishing.
Alternatively, referring to fig. 1, the first lens group G1 includes a first lens 1, a second lens 2, a third lens 3, and a fourth lens 4 arranged in order along the optical axis. The first lens 1 is a biconcave lens, the second lens 2 and the third lens 3 are meniscus lenses, and the fourth lens 4 is a biconvex lens. Since the sixth lens group G6 is symmetrical to the first lens group G1 with respect to the STOP, the sixth lens group G6 includes a seventeenth lens 17, an eighteenth lens 18, a nineteenth lens 19, and a twentieth lens 20, which are arranged in order along the optical axis, accordingly. The seventeenth lens 17 is a biconvex lens, the eighteenth lens 18 and the nineteenth lens 19 are meniscus lenses, and the twentieth lens 20 is a biconcave lens.
Alternatively, referring to fig. 1, the second lens group G2 includes a fifth lens 5 and a sixth lens 6 arranged in order along the optical axis, the fifth lens 5 being a meniscus lens, and the sixth lens 6 being a biconcave lens. Since the fifth lens group G5 is symmetrical to the second lens group G2 with respect to the STOP, accordingly, the fifth lens group G5 includes a fifteenth lens 15 and a sixteenth lens 16 arranged in order along the optical axis, the fifteenth lens 15 being a biconcave lens, the sixteenth lens 16 being a meniscus lens.
Alternatively, referring to fig. 1, the third lens group G3 includes a seventh lens 7, an eighth lens 8, a ninth lens 9, and a tenth lens 10 arranged in this order along the optical axis. The seventh lens 7 is a meniscus lens, the eighth lens 8 and the tenth lens 10 are double convex lenses, and the ninth lens 9 is a double concave lens. Since the fourth lens group G4 is symmetrical to the third lens group G3 with respect to the STOP, the fourth lens group G4 includes an eleventh lens 11, a twelfth lens 12, a thirteenth lens 13, and a fourteenth lens 14, which are arranged in order along the optical axis, accordingly. The eleventh lens 11 and the thirteenth lens 13 are double convex lenses, the twelfth lens 12 is a double concave lens, and the fourteenth lens 14 is a meniscus lens.
Alternatively, referring to fig. 1, the maximum image-side numerical aperture of a lithographic projection objective under 365nm illumination is 0.18. That is, when an i-line wavelength band (center wavelength of the i-line wavelength band is 365nm) of a mercury lamp is used as an exposure light source, the maximum image-side numerical aperture of the lithographic projection objective lens is 0.18. The object image conjugate distance of the photoetching projection objective is 900mm, and the object image conjugate distance of the photoetching projection objective is the distance between the object plane of the photoetching projection objective and the image plane of the photoetching projection objective. The magnification of the photoetching projection objective is-1, the diameter of an exposure field is 62.934mm, and the object distance and the image distance are both 55.65 mm.
TABLE 1A specific design value for a lithographic projection objective
Figure GDA0002491350690000091
Figure GDA0002491350690000101
Table 1 shows a specific design value of the lithographic projection objective, the specific value of which is adjustable according to the product requirements, without limiting the embodiments of the present invention, one lens generally comprises two surfaces, each of which is a refractive surface, the numbers in table 1 are numbered according to the surfaces of the respective lenses, the object surface of the lithographic projection objective is represented by OBJ in the column "number" representing a STOP, "IMA" in the column "representing an image plane of the lithographic projection objective," type "in the column" number "representing an image plane of the lithographic projection objective, all surfaces are spherical, all lenses are spherical, the positive radius value represents the center of curvature on the right side of the surface (adjacent to the image plane IMA side), the negative radius value represents the center of curvature on the left side of the surface (away from the image plane side), the value in the column" thickness "represents the on-axis distance from the current surface to the next surface, the cell" 1 "thickness" 12.026046 "represents the thickness of the first lens 1" tfim ", the cell" thickness "tfm" -8 "represents the thickness of the first lens", the "sfm" -equivalent to-N "-equivalent cell". 3 "18, the" 18 "8" represents the maximum thickness of the glass filled with No. 3 "sfm", the current cell No. 3 "represents the optical contamination preventing glass, the optical path of the optical contamination, the" sfy 3 "18", the cell No. 3 "18, No. represents the current glass, the p 3" No. represents the full p 3 "sfy 3" 18, the full No. 3 "No. representing the full No. 3" No. representing the full p 3, No. representing the No. 3, No. 3.
FIG. 2 is a diagram of a meridional aberration distribution at a pupil of a lithographic projection objective at a field-of-view point height of 1 with respect to the object under 365nm illumination. FIG. 3 is a sagittal aberration profile at a pupil of a lithographic projection objective at a relative object field-of-view point height of 1 under 365nm illumination. FIG. 4 is a diagram of a meridional aberration distribution at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.89 at 365nm illumination. FIG. 5 is a sagittal aberration profile at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.89 under 365nm illumination. FIG. 6 is a diagram of a meridional aberration distribution at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.67 under 365nm illumination. FIG. 7 is a sagittal aberration profile at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.67 under 365nm illumination. Referring to fig. 2-7, the abscissa represents the height (in mm) over the pupil, wherein the center point (i.e., the intersection of the abscissa and the ordinate) represents the pupil center, the ordinate represents the aberration magnitude (in mm), and the different curves of each graph represent the aberration curves at the respective wavelengths, respectively. It can be seen from fig. 2-7 that the maximum aberration at each field of view point is less than 0.005969mm, and the wave aberration of the lithographic projection objective is well corrected.
FIG. 8 is a vertical axis chromatism graph of a lithographic projection objective under 365nm illumination, referring to FIG. 8, with the ordinate being the object space height (in mm) and the abscissa being the vertical axis chromatism (in mm), a curve L1 showing the vertical axis chromatism values of 360nm and 374nm wavelengths at each object space field height, and a curve L2 showing the vertical axis chromatism values of 360nm and 365nm wavelengths at each object space field height, it can be seen from FIG. 8 that the maximum vertical axis chromatism of the lithographic projection objective is 14nm, indicating that the vertical axis chromatism of the lithographic projection objective has been well corrected.
Fig. 9 is an object-image-side telecentricity diagram of the lithography projection objective under 365nm illumination, referring to fig. 9, the abscissa is the height of the object-side field of view (in mm), the ordinate is telecentric (in mrad), two curves in fig. 9 are respectively image-side telecentric and object-side telecentric of the lithography projection objective, since the two curves are very close to each other and overlap in fig. 9, the maximum value of the object-side telecentric and the image-side telecentric in the whole field of view does not exceed 6.87mrad, and the telecentricity of the lithography projection objective is well corrected.
Alternatively, referring to fig. 1, the maximum image-side numerical aperture of the lithographic projection objective under illumination in the i-line band, the h-line band and the g-line band is 0.14. That is, when an i-line wavelength band (the center wavelength of the i-line wavelength band is 365nm), an h-line wavelength band (the center wavelength of the h-line wavelength band is 405nm), and a g-line wavelength band (the center wavelength of the g-line wavelength band is 436nm) of a mercury lamp were used as an exposure light source, the maximum image-side numerical aperture of the lithographic projection objective lens was 0.14. The object image conjugate distance of the photoetching projection objective is 900mm, and the object image conjugate distance of the photoetching projection objective is the distance between the object plane of the photoetching projection objective and the image plane of the photoetching projection objective. The magnification of the photoetching projection objective is-1, the diameter of an exposure field is 62.934mm, and the object distance and the image distance are both 55.65 mm.
FIG. 10 is a diagram of a distribution of meridional aberrations at the pupil of a lithographic projection objective at a relative object field-of-view point height of 1 under 365nm, 405nm and 436nm illumination. FIG. 11 is a sagittal aberration profile at the pupil of a lithographic projection objective at 365nm, 405nm and 436nm illumination with a relative object field-of-view point height of 1. FIG. 12 is a diagram of the distribution of the meridional aberrations at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.89 at 365nm, 405nm and 436nm illumination. FIG. 13 is a sagittal aberration profile at the pupil for a lithographic projection objective having a relative object field-of-view point height of 0.89 at 365nm, 405nm and 436nm illumination. FIG. 14 is a diagram of the distribution of the meridional aberrations at the pupil of a lithographic projection objective at a relative object field-of-view point height of 0.67 under 365nm, 405nm and 436nm illumination. FIG. 15 is a sagittal aberration profile at the pupil of a lithographic projection objective at 365nm, 405nm, and 436nm illumination with a relative object field-of-view point height of 0.67. Referring to fig. 10-15, the abscissa represents the height (in mm) over the pupil, where the center point represents the pupil center and the ordinate represents the aberration magnitude (in mm), and the different curves of each graph represent aberration curves at respective wavelengths. It can be seen from fig. 10-15 that the maximum aberration at each field of view point is less than 0.009656mm, and the wave aberration of the lithographic projection objective is well corrected.
FIG. 16 is a chart of the vertical axis chromatic aberration of the lithography projection objective under 365nm, 405nm and 436nm illumination, referring to FIG. 16, the ordinate is the object space height (in mm), the abscissa is the vertical axis chromatic aberration (in mm), a curve L1 shows the vertical axis chromatic aberration values of 360nm and 374nm wavelengths at the height of each object space field of view, a curve L2 shows the vertical axis chromatic aberration values of 360nm and 365nm wavelengths at the height of each object space field of view, and it can be seen from FIG. 16 that the maximum vertical axis chromatic aberration of the lithography projection objective is 18nm, which indicates that the vertical axis chromatic aberration of the lithography projection objective has been well corrected.
Fig. 17 is an object-image-side telecentricity diagram of the lithography projection objective under 365nm, 405nm and 436nm illumination, referring to fig. 17, the abscissa is the height of the object-side field of view (in mm), the ordinate is telecentric (in mrad), the two curves in fig. 17 are respectively the image-side telecentricity and the object-side telecentricity of the lithography projection objective, since the two curves are very close in distance and overlap in fig. 17, the maximum value of the object-side telecentricity and the image-side telecentricity does not exceed 5.88mrad in the whole field of view, and the telecentricity of the lithography projection objective is well corrected.
The embodiment of the invention also provides a photoetching machine which comprises the photoetching projection objective lens in the embodiment. The light emitted by the light source irradiates a workpiece after passing through the photoetching projection objective lens, so that the photoetching process is realized. Because the photoetching machine provided by the embodiment of the invention comprises the photoetching projection objective lens in the embodiment, and the photoetching projection objective lens has high resolution, the photoetching machine using the photoetching projection objective lens can realize more detailed exposure on products, thereby improving the yield of the products. The numerical aperture of the photoetching projection objective is large, so that the photoetching machine using the photoetching projection objective can realize wider exposure to products, thereby improving the product yield. The numerical aperture of the photoetching projection objective is adjustable, so that a photoetching machine using the photoetching projection objective can be applied to exposure scenes with different numerical apertures under the condition of not replacing the photoetching projection objective. The photoetching projection objective lens is applicable to an i-line wave band, an h-line wave band and a g-line wave band, so that a photoetching machine using the photoetching projection objective lens can have a wider application wave band.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (11)

1. A lithographic projection objective comprising, arranged in sequence along an optical axis, a first lens group, a second lens group, a third lens group, a stop, a fourth lens group, a fifth lens group and a sixth lens group, the first and sixth lens groups being symmetric about the stop, the second and fifth lens groups being symmetric about the stop; the third lens group and the fourth lens group are symmetric about the stop;
Figure FDA0002491350680000011
wherein f is1Is the focal length of the first lens group and the sixth lens group, f2Is the focal length of the second lens group and the fifth lens group, f3Is the focal length of the third lens group and the fourth lens group;
the maximum image-side numerical aperture of the photoetching projection objective under the illumination of an i-line wave band, an h-line wave band and a g-line wave band is 0.14.
2. Lithography projection objective according to claim 1, characterized in that the first lens group and the sixth lens group have positive optical power, the second lens group and the fifth lens group have negative optical power, and the third lens group and the fourth lens group have positive optical power.
3. Lithography projection objective according to claim 1, wherein all lenses of the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group and the sixth lens group are spherical lenses.
4. Lithography projection objective according to claim 1, wherein the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group and the sixth lens group each comprise at least one meniscus lens.
5. Lithography projection objective according to claim 1, wherein the first lens group comprises 4 lenses and the second lens group comprises 2 lenses; the third lens group includes 4 lenses;
the fourth lens group includes 4 lenses; the fifth lens group includes 2 lenses; the sixth lens group includes 4 lenses.
6. Lithography projection objective according to claim 5, wherein the first lens group comprises a first lens, a second lens, a third lens and a fourth lens arranged in that order along the optical axis; the first lens is a biconcave lens, the second lens and the third lens are meniscus lenses, and the fourth lens is a biconvex lens;
the sixth lens group comprises a seventeenth lens, an eighteenth lens, a nineteenth lens and a twentieth lens which are sequentially arranged along an optical axis; the seventeenth lens is a biconvex lens, the eighteenth lens and the nineteenth lens are meniscus lenses, and the twentieth lens is a biconcave lens.
7. Lithography projection objective according to claim 5, wherein the second lens group comprises a fifth lens and a sixth lens arranged in series along the optical axis; the fifth lens is a meniscus lens, and the sixth lens is a biconcave lens;
the fifth lens group comprises a fifteenth lens and a sixteenth lens which are sequentially arranged along an optical axis; the fifteenth lens is a biconcave lens and the sixteenth lens is a meniscus lens.
8. Lithography projection objective according to claim 5, wherein the third lens group comprises a seventh lens, an eighth lens, a ninth lens and a tenth lens arranged in that order along the optical axis; the seventh lens element is a meniscus lens element, the eighth lens element and the tenth lens element are biconvex lens elements, and the ninth lens element is a biconcave lens element; the fourth lens group comprises an eleventh lens, a twelfth lens, a thirteenth lens and a fourteenth lens which are sequentially arranged along an optical axis; the eleventh lens element and the thirteenth lens element are biconvex lenses, the twelfth lens element is a biconcave lens, and the fourteenth lens element is a meniscus lens.
9. Lithography projection objective according to claim 1, characterized in that the lithography projection objective has a maximum image-side numerical aperture of 0.18 in the i-line band illumination.
10. Lithography projection objective according to claim 1, characterized in that the exposure field of view of the lithography projection objective has a diameter of 62.934 mm.
11. A lithography machine, comprising: lithography projection objective according to any one of claims 1 to 10.
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