CN102279457B - Single-power large-viewing field photoetching projection objective lens - Google Patents
Single-power large-viewing field photoetching projection objective lens Download PDFInfo
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- CN102279457B CN102279457B CN 201010196221 CN201010196221A CN102279457B CN 102279457 B CN102279457 B CN 102279457B CN 201010196221 CN201010196221 CN 201010196221 CN 201010196221 A CN201010196221 A CN 201010196221A CN 102279457 B CN102279457 B CN 102279457B
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Abstract
The invention relates to a photoetching projection objective lens, which is used for projecting a pattern positioned in the objective plane of the projection objective lens to the image plane of the projection objective lens. The photoetching projection objective lens comprises six lens groups which comprise 16 lenses sequentially arranged from the objective plane along an optical axis, wherein the fourth lens group, the fifth lens group and the sixth lens group are symmetrical with the third lens group, the second lens group and the first lens group about an aperture diaphragm. The magnifying power of the photoetching projection objective lens is -1. The projection objective lens optical system has a large exposure area, a plurality of kinds of aberration and distortion can be well corrected, a telecentric object party can be ensured, a viewing field which is 1.5 to 2 times of that in background patent can be provided, and the requirements of high-yield photoetching equipment can be met.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of list times large visual field photoetching projection objective lens.
Background technology
Lithographic equipment is a kind of required pattern to be applied to device on workpiece.Normally required pattern is applied to the device on the target part on workpiece.Lithographic equipment can be used to for example manufacturing of integrated circuit (IC).Usually, the scope of lithographic equipment includes but not limited to: integrated circuit is made lithographic equipment, panel display board lithographic equipment, MEMS/MOEMS lithographic equipment, Advanced Packaging lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
At present in field of semiconductor processing, micron order resolution, the projection optical system demand of high yield increases day by day.Lithographic equipment must have large areas imaging in order to obtain high yield, and broad spectrum light source is as mercury lamp.Simultaneously for simplified design, tendency adopts 1x enlargement ratio system.
Chinese patent CN101438196A has introduced another kind of 1x enlargement ratio projection objective, and these object lens are a kind of poly-lens structures, comprises 20-24 lens, comprises a plurality of aspheric surfaces, numerical aperture maximum 0.25, but this patent half field-of-view only has 42mm.
Jap.P. JPA2002072080 has introduced another kind of 1x enlargement ratio projection objective, and these object lens have also adopted the poly-lens structure, comprises 32 eyeglasses, comprises a plurality of aspheric surfaces, numerical aperture 0.145, and half field-of-view's size is 71mm.
Summary of the invention
The objective of the invention is to design a kind of large visual field photoetching projection objective lens, realize the resolution of the micron utmost point with relatively simple structure, particularly can realize large exposure visual field, and larger operating distance.Also want simultaneously to proofread and correct distortion in large field range, the curvature of field, astigmatism, aberration, heart error far away.
A kind of photoetching projection objective lens of the present invention is used for a pattern that is positioned at the object plane of described projection objective is projected described projection objective as the plane, it is characterized in that six lens combination setting gradually from described object plane along optical axis totally 16 lens, comprising:
First lens group with positive light coke;
The second lens combination with positive light coke;
The 3rd lens combination with negative power;
Aperture diaphragm;
The 4th lens combination with negative power;
The 5th lens combination with positive light coke; And
The 6th lens combination with positive light coke;
The 4th lens combination and the 3rd lens combination are symmetrical with respect to aperture diaphragm;
The 5th lens combination and the second lens combination are symmetrical with respect to aperture diaphragm;
The 6th lens combination and first lens group are symmetrical with respect to aperture diaphragm;
Wherein, described each lens combination satisfies following relational expression:
0.013<f
2/f
1<0.028
-3.7<f
3/f
2<-6.2
f
1: the focal length of first lens group; f
2: the focal length of the second lens combination; f
3: the focal length of the 3rd lens combination;
Wherein, described first lens group is comprised of two lens, and the first lens focal power is for just, and the second lens strength is for negative;
Described the second lens combination is comprised of three lens, and that focal power is followed successively by is negative, positive, just; First, second lens wherein form one first sub-lens group;
Described the 3rd lens combination is made of three lens, and focal power just is being followed successively by, positive and negative; First, second lens wherein form one second sub-lens group;
Satisfy following relational expression between lens combination and sub-lens group:
0.019<f
1-2/f1<0.025
-8.4<f
1n/f
2<-6.9
-0.12<f
2n/f
3<-0.22
Wherein: f
1-2: the focal length of first lens group the second lens; f
1n: the focal length of the first sub-lens group; f
2n: the focal length of the second sub-lens group;
Wherein, the objective material Abbe number satisfies following relation:
0.34<V
1-1/V
1-2<0.65
0.55<V
2-1/V
2-2<0.95
1.46<V
3-2/V
3-3<1.89
V
1-1And V
1-2: the Abbe number of the first lens of first lens group and the second lens;
V
2-1And V
2-2: the Abbe number of the first lens of the second lens combination and the second lens;
V
3-2And V
3-3: the second lens of the 3rd lens combination and the Abbe number of the 3rd lens.
Preferably, the enlargement ratio of photoetching projection objective lens is-1 times.
Wherein the first lens of first lens group is approximate plano-convex lens, and almost plane is towards the mask face; The second lens are biconcave lens.
Wherein the first lens of first lens group is made of high chromatic dispersion material, and the second lens are made of low chromatic dispersion material.
Wherein the first lens of the second lens combination is biconcave lens; The second lens are biconvex lens; The 3rd lens are biconvex lens.
Wherein the first lens of the second lens combination is made of high chromatic dispersion material, and the second lens are made of low chromatic dispersion material, and the 3rd lens are made of low chromatic dispersion material.
Wherein the first lens of the 3rd lens combination is approximate plano-convex lens, and almost plane is towards the picture plane; The second lens are meniscus lens, and its concave surface is towards the picture plane; The 3rd lens are biconcave lens.
Wherein the first lens of the 3rd lens combination is made of low chromatic dispersion material; The second lens are made of low chromatic dispersion material; The 3rd lens are made of high chromatic dispersion material.
Wherein high chromatic dispersion material comprises PBM2Y_OHAR, PBM1Y_OHARA, PBM6Y_OHARA.Low chromatic dispersion material comprises SFSL5Y_OHARA, SFPL51Y_OHARA.
A kind of projection objective lens optical system of the present invention has large wide exposure area, can the multiple aberration of well-corrected, distortion, and guarantee image Fang Yuanxin.Numerical aperture of objective is moderate, can provide background patents 1.5 times of visual fields to twice, and namely half field-of-view 100mm, can satisfy high yield lithographic equipment demand.
Description of drawings
Fig. 1 is photoetching projection objective lens optical system schematic diagram of the present invention;
Fig. 2 is photoetching projection objective lens ray aberration curve map of the present invention;
Fig. 3 is photoetching projection objective lens distortion curve figure of the present invention;
Fig. 4 is photoetching projection objective lens object space of the present invention and picture side innermost being line chart far away.
Embodiment
Describe specific embodiments of the invention in detail below in conjunction with accompanying drawing.
The present embodiment eyeglass quantity is 16, and numerical aperture is 0.15, can guarantee the good imaging of exposure visual field in diameter 200mm scope.
As shown in Figure 1, embodiment object lens 50 are 16 chip architectures, are all sphere, take symmetrical structure.Lens combination G51 is made of two lens 51,52.Lens 51 focal powers are for just, and approximate plane 501 is made of high chromatic dispersion material towards mask face R; Lens 52 focal powers are biconcave lens for negative, are made of low chromatic dispersion material.Lens combination G52 by three lens 54,54,55, consist of, that focal power is followed successively by is negative, positive, just.Lens combination G52 comprises a sub-lens group G52-1n, and sub-lens group G52-1n comprises the lens 53,54 of lens combination G52.Lens 53 are made of high chromatic dispersion material, and lens 54,55 are made of low chromatic dispersion material.Lens combination G53 is made of three lens 56,57,58, and focal power just is being followed successively by, positive and negative.Lens combination G53 comprises a sub-lens group G53-1n, and sub-lens group G53-1n comprises the lens 56,57 of lens combination G53, and lens 56,57 are made of low chromatic dispersion material.Lens 58 are made of high chromatic dispersion material.Lens combination G54 and lens combination G53 are symmetrical about diaphragm AS; Lens combination G55 and G52 are symmetrical about diaphragm AS; Lens combination G56 and G51 are symmetrical about diaphragm AS.
Latter half of symmetry system having symmetry before object lens forms the enlargement ratio of-1 times, the vertical axial aberration auto-compensations such as coma, distortion.
Lens combination G51 is made of the two positive negative lenses that separate, and has proofreaied and correct the curvature of field, astigmatism, guarantees simultaneously the object space heart far away.The first lens 51 of lens combination G51 is made of PBM2Y_OHARA, and the second lens 52 of lens combination G51 are made of SFPL51Y_OHARA, both forms the anomalous dispersion combination.
The sub-lens group G52-1n of lens combination G52 comprises two lens 53,54, the biconcave lens that lens 53 consist of for PBL6Y_OHARA, the biconvex lens that lens 54 consist of for SFSL5Y_OHARA.Sub-lens group G52-1n forms the structure of similar thick bent moon formula lens with positive and negative lens, play the effect of the further correction curvature of field and astigmatism.The biconvex lens that the 3rd lens 55 of lens combination G52 consist of for SFSL5Y_OHARA.
The sub-lens group G53-1n of lens combination G53 comprises two positive lenss 56,57, and lens 56,57 consist of by SFSL5Y_OHARA.The biconcave lens that the 3rd lens 58 of lens combination G53 consist of for PBL1Y_OHARA.Lens combination G53 has compensated the spherical aberration that lens combination G51, G52 produce, and remaining aberration.The effect of the latter half of lens combination G54 of system, G55, G56 is similar.
Each parameter request of embodiment is as shown in table 1
Table 1
Operation wavelength | @365nm±3nm |
Thing/as number formulary value aperture NA | 0.15 |
Enlargement ratio | -1 |
Visual field (diameter) | 200mm |
Object image distance from | 1650mm |
Thing/as square working distance | 100.5mm |
Relational expression between following lens combination G51, G52, G54, G54 and sub-lens group lens thereof has further been established the basis that the object lens picture element is optimized.
Described each lens combination satisfies following relational expression:
0.013<f
2/f
1<0.028
-3.7<f
3/f
2<-6.2
0.019<f
1-2/f1<0.025
-8.4<f
1n/f
2<-6.9
-0.12<f
2n/f
3<-0.22
0.34<V
1-1/V
1-2<0.65
0.55<V
2-1/V
2-2<0.95
1.46<V
3-2/V
3-3<1.89
Wherein: f
1: the focal length of first lens group G51; f
2: the focal length of the second lens combination G52; f
3: the focal length of the 3rd lens combination G53;
f
1-2: the focal length of first lens group G51 the second lens 52; f
1n: the focal length of the first sub-lens group G52-1n; f
2n: the focal length of the second sub-lens group G53-1n;
V
1-1And V
1-2: the first lens 51 of first lens group G51 and the Abbe number of the second lens 52;
V
2-1And V
2-2: the first lens 53 of the second lens combination G52 and the Abbe number of the second lens 54;
V
3-2And V
3-3: the second lens 57 of the 3rd lens combination G53 and the Abbe number of the 3rd lens 58.
Owing to being-1x enlargement ratio system that lens combination G54, G55, G56 and corresponding sub-lens group, lens also should satisfy similar relational expression.
Table 2 has provided the specific design value of the projection objective of this example, and positive radius value represents the center of curvature on the right on surface, and negative radius value represents that the center of curvature is on the left side on surface.Interval between optical element thickness or two optical elements is distance to the axle on next surface.All dimensional units are all millimeters.
In table 2, " S# " presentation surface numbering, " STOP " expression aperture diaphragm AS.In the radius item, " INF " represents infinitely great.
S # | Radius | Thickness and spacing | Material | Remarks |
0 | 1.00E+18 | 100.5448 | Operating distance WDI | |
1 | -2.49E+03 | 49.92852 | PBM2Y_OHARA | L1 |
2 | -265.36158 | 7.027256 | ||
3 | -8084.3386 | 20.04565 | SFPL51Y_OHARA | L2 |
4 | 229.312027 | 172.4362 | ||
5 | -180.51269 | 43.70618 | PBL6Y_OHARA | L3 |
6 | 853.730686 | 7.441044 | ||
7 | 1003.506 | 62.6858 | SFSL5Y_OHARA | L4 |
8 | -212.54774 | 48.41391 |
9 | 458.188242 | 48.39013 | SFSL5Y_OHARA | L5 | |
10 | -535.74649 | 118.024 | |||
11 | 314.863116 | 25.86282 | SFSL5Y_OHARA | L6 | |
12 | 3184.91458 | 7.494267 | |||
13 | 278.890782 | 39.37729 | SFSL5Y_OHARA | L7 | |
14 | 627.606481 | 15.15477 | |||
15 | -1656.5001 | 39.11947 | PBL1Y_OHARA | L8 | |
16 | 176.613164 | 17.73981 | |||
17 | 1.00E+18 | 17.73981 | (Stop) | ||
18 | -1.77E+02 | 39.11947 | | L9 | |
19 | 1656.50006 | 15.15477 | |||
20 | -627.60648 | 39.37729 | SFSL5Y_OHARA | L10 | |
21 | -278.89078 | 7.494267 | |||
22 | -3184.9146 | 25.86282 | SFSL5Y_OHARA | L11 | |
23 | -314.86312 | 118.024 | |||
24 | 535.74649 | 48.39013 | SFSL5Y_OHARA | L12 | |
25 | -458.18824 | 48.41391 | |||
26 | 212.547743 | 62.6858 | SFSL5Y_OHARA | L13 | |
27 | -1003.506 | 7.441044 | |||
28 | -853.73069 | 43.70618 | PBL6Y_OHARA | L14 | |
29 | 180.512689 | 172.4362 | |||
30 | -229.31203 | 20.04565 | SFPL51Y_OHARA | L15 | |
31 | 8084.33863 | 7.027256 | |||
32 | 265.361578 | 49.92852 | PBM2Y_OHARA | L16 | |
33 | 2487.97739 | 100.5448 | |||
IMAGE | 1.00E+18 | -0.01822 |
Fig. 2 is the ray aberration curve map of the present embodiment, and on figure, aberration is proofreaied and correct.
Fig. 3 is the invention photoetching projection objective lens distortion curve figure of the present embodiment, and on figure, distortion is calibrated.
Fig. 4 is object space and the picture side innermost being line chart far away of the present embodiment, and the heart far away is in the 10mrad left and right.
Described in this instructions is a kind of preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (11)
1. photoetching projection objective lens is used for a pattern that is positioned at the object plane of described projection objective is projected described projection objective as the plane, it is characterized in that six lens combination setting gradually from described object plane along optical axis totally 16 lens, comprising:
First lens group with positive light coke, described first lens group is comprised of two lens, and the first lens focal power is for just, and the second lens strength is for negative;
The second lens combination with positive light coke, described the second lens combination is comprised of three lens, and that focal power is followed successively by is negative, positive, just; First, second lens wherein form one first sub-lens group;
Described the 3rd lens combination of the 3rd lens combination with negative power is made of three lens, and focal power just is being followed successively by, positive and negative; First, second lens wherein form one second sub-lens group;
Aperture diaphragm;
The 4th lens combination with negative power;
The 5th lens combination with positive light coke; And
The 6th lens combination with positive light coke;
The 4th lens combination and the 3rd lens combination are symmetrical with respect to aperture diaphragm;
The 5th lens combination and the second lens combination are symmetrical with respect to aperture diaphragm;
The 6th lens combination and first lens group are symmetrical with respect to aperture diaphragm;
Wherein, described each lens combination satisfies following relational expression:
0.013<f
2/f
1<0.028
-3.7<f
3/f
2<-6.2
f
1: the focal length of first lens group; f
2: the focal length of the second lens combination; f
3: the focal length of the 3rd lens combination;
Satisfy following relational expression between lens combination and sub-lens group:
0.019<f
1-2/f
1<0.025
-8.4<f
1n/f
2<-6.9
-0.12<f
2n/f
3<-0.22
Wherein: f
1-2: the focal length of first lens group the second lens; f
1n: the focal length of the first sub-lens group; f
2n: the focal length of the second sub-lens group.
2. photoetching projection objective lens according to claim 1 is characterized in that the objective material Abbe number satisfies following relation:
0.34<V
1-1/V
1-2<0.65
0.55<V
2-1/V
2-2<0.95
1.46<V
3-2/V
3-3<1.89
V
1-1And V
1-2: the Abbe number of the first lens of first lens group and the second lens;
V
2-1And V
2-2: the Abbe number of the first lens of the second lens combination and the second lens;
V
3-2And V
3-3: the second lens of the 3rd lens combination and the Abbe number of the 3rd lens.
3. photoetching projection objective lens according to claim 2, is characterized in that the enlargement ratio of photoetching projection objective lens is-1 times.
4. photoetching projection objective lens according to claim 2, wherein the first lens of first lens group is that one side is the plano-convex lens of almost plane, almost plane is towards the mask face; The second lens are biconcave lens.
5. photoetching projection objective lens according to claim 2, wherein the first lens of first lens group is made of high chromatic dispersion material, and the second lens are made of low chromatic dispersion material.
6. photoetching projection objective lens according to claim 2, wherein the first lens of the second lens combination is biconcave lens; The second lens are biconvex lens; The 3rd lens are biconvex lens.
7. photoetching projection objective lens according to claim 2, wherein the first lens of the second lens combination is made of high chromatic dispersion material, and the second lens are made of low chromatic dispersion material, and the 3rd lens are made of low chromatic dispersion material.
8. photoetching projection objective lens according to claim 2, wherein the first lens of the 3rd lens combination is that one side be the plano-convex lens of almost plane, almost plane is towards looking like the plane; The second lens are meniscus lens, and its concave surface is towards the picture plane; The 3rd lens are biconcave lens.
9. photoetching projection objective lens according to claim 2, wherein the first lens of the 3rd lens combination is made of low chromatic dispersion material; The second lens are made of low chromatic dispersion material; The 3rd lens are made of high chromatic dispersion material.
10. according to claim 5, one of 7,9 described photoetching projection objective lens, wherein high chromatic dispersion material comprises PBM2Y_OHARA, PBM1Y_OHARA, PBM6Y_OHARA.
11. according to claim 5, one of 7,9 described photoetching projection objective lens, wherein low chromatic dispersion material comprises SFSL5YOHARA, SFPL51Y_OHARA.
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CN103278912B (en) * | 2013-06-19 | 2015-07-08 | 中国科学院光电技术研究所 | Reflective type ultra-violet lithography objective lens |
CN103926801B (en) * | 2014-04-01 | 2016-03-09 | 中国科学院上海光学精密机械研究所 | Projection optical system |
CN104122669B (en) * | 2014-08-07 | 2016-08-10 | 张家港鹏博光电科技有限公司 | A kind of symmetrical expression double-telecentric projection optical system and lithographic equipment |
CN109991816B (en) * | 2017-12-29 | 2020-06-16 | 上海微电子装备(集团)股份有限公司 | Projection objective optical system and photoetching machine |
CN110941144B (en) * | 2018-09-21 | 2021-01-15 | 上海微电子装备(集团)股份有限公司 | Testing device and method for objective lens distortion and field curvature and photoetching equipment |
CN109375480B (en) * | 2018-12-30 | 2020-08-07 | 上海微电子装备(集团)股份有限公司 | Photoetching projection objective and photoetching machine |
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CN1256429A (en) * | 1998-12-09 | 2000-06-14 | 中国科学院西安光学精密机械研究所 | Image space telecentric double-Gaussian optical system |
CN101063743A (en) * | 2007-04-29 | 2007-10-31 | 上海微电子装备有限公司 | Full refraction projection optical system |
CN101356466A (en) * | 2006-05-24 | 2009-01-28 | 卡西欧计算机株式会社 | Zoom lens having four lens groups |
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JP2006071893A (en) * | 2004-09-01 | 2006-03-16 | Canon Inc | Optical scanner and image forming apparatus using the same |
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CN1256429A (en) * | 1998-12-09 | 2000-06-14 | 中国科学院西安光学精密机械研究所 | Image space telecentric double-Gaussian optical system |
CN101356466A (en) * | 2006-05-24 | 2009-01-28 | 卡西欧计算机株式会社 | Zoom lens having four lens groups |
CN101063743A (en) * | 2007-04-29 | 2007-10-31 | 上海微电子装备有限公司 | Full refraction projection optical system |
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