CN102279457A - Single-power large-viewing field photoetching projection objective lens - Google Patents
Single-power large-viewing field photoetching projection objective lens Download PDFInfo
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- CN102279457A CN102279457A CN2010101962212A CN201010196221A CN102279457A CN 102279457 A CN102279457 A CN 102279457A CN 2010101962212 A CN2010101962212 A CN 2010101962212A CN 201010196221 A CN201010196221 A CN 201010196221A CN 102279457 A CN102279457 A CN 102279457A
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Abstract
The invention relates to a photoetching projection objective lens, which is used for projecting a pattern positioned in the objective plane of the projection objective lens to the image plane of the projection objective lens. The photoetching projection objective lens comprises six lens groups which comprise 16 lenses sequentially arranged from the objective plane along an optical axis, wherein the fourth lens group, the fifth lens group and the sixth lens group are symmetrical with the third lens group, the second lens group and the first lens group about an aperture diaphragm. The magnifying power of the photoetching projection objective lens is -1. The projection objective lens optical system has a large exposure area, a plurality of kinds of aberration and distortion can be well corrected, a telecentric object party can be ensured, a viewing field which is 1.5 to 2 times of that in background patent can be provided, and the requirements of high-yield photoetching equipment can be met.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the doubly big visual field of a kind of list photoetching projection objective lens.
Background technology
Lithographic equipment is a kind of required pattern to be applied to device on the workpiece.Normally required pattern is applied to the device on the target part on the workpiece.Lithographic equipment can be used to for example manufacturing of integrated circuit (IC).Usually, the scope of lithographic equipment includes but not limited to: integrated circuit is made lithographic equipment, panel display board lithographic equipment, MEMS/MOEMS lithographic equipment, advanced encapsulation lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
At present in field of semiconductor processing, micron order resolution, the projection optical system demand of high yield increases day by day.Lithographic equipment must have big imaging scope in order to obtain high yield, and broad spectrum light source is as mercury lamp.For simplified design, tendency adopts 1x enlargement ratio system simultaneously.
Chinese patent CN101438196A has introduced another kind of 1x enlargement ratio projection objective, and these object lens are a kind of poly-lens structures, comprises 20-24 lens, comprises a plurality of aspheric surfaces, numerical aperture maximum 0.25, but this patent half field-of-view has only 42mm.
Jap.P. JPA2002072080 has introduced another kind of 1x enlargement ratio projection objective, and these object lens have also adopted the poly-lens structure, comprises 32 eyeglasses, comprises a plurality of aspheric surfaces, numerical aperture 0.145, and half field-of-view's size is 71mm.
Summary of the invention
The objective of the invention is to design a kind of big visual field photoetching projection objective lens, the resolution with the simple relatively structure realization micron utmost point particularly can realize big exposure visual field, and bigger operating distance.Also want simultaneously to proofread and correct distortion in the big field range, the curvature of field, astigmatism, aberration, heart error far away.
A kind of photoetching projection objective lens of the present invention is used for a pattern that is positioned at the object plane of described projection objective is projected described projection objective as the plane, it is characterized in that six lens combination setting gradually from described object plane along optical axis totally 16 lens, comprising:
First lens combination with positive light coke;
Second lens combination with positive light coke;
The 3rd lens combination with negative power;
Aperture diaphragm;
The 4th lens combination with negative power;
The 5th lens combination with positive light coke; And
The 6th lens combination with positive light coke;
The 4th lens combination and the 3rd lens combination are with respect to the aperture diaphragm symmetry;
The 5th lens combination and second lens combination are with respect to the aperture diaphragm symmetry;
The 6th lens combination and first lens combination are with respect to the aperture diaphragm symmetry;
Wherein, described each lens combination satisfies following relational expression:
0.013＜f
2/f
1＜0.028
-3.7＜f
3/f
2＜-6.2
f
1: the focal length of first lens combination; f
2: the focal length of second lens combination; f
3: the focal length of the 3rd lens combination;
Wherein, described first lens combination is made up of two lens, and first lens strength is for just, and second lens strength is for negative;
Described second lens combination is made up of three lens, and that focal power is followed successively by is negative, positive, just; First, second lens are wherein formed one first sub-lens group;
Described the 3rd lens combination is made of three lens, and focal power just is being followed successively by, positive and negative; First, second lens are wherein formed one second sub-lens group;
Satisfy following relational expression between lens combination and the sub-lens group:
0.019＜f
1-2/f1＜0.025
-8.4＜f
1n/f
2＜-6.9
-0.12＜f
2n/f
3＜-0.22
Wherein: f
1-2: the focal length of first lens combination, second lens; f
1n: the focal length of the first sub-lens group; f
2n: the focal length of the second sub-lens group;
Wherein, the objective material Abbe number satisfies following relation:
0.34＜V
1-1/V
1-2＜0.65
0.55＜V
2-1/V
2-2＜0.95
1.46＜V
3-2/V
3-3＜1.89
V
1-1And V
1-2: first lens of first lens combination and the Abbe number of second lens;
V
2-1And V
2-2: first lens of second lens combination and the Abbe number of second lens;
V
3-2And V
3-3: second lens of the 3rd lens combination and the Abbe number of the 3rd lens.
Preferably, the enlargement ratio of photoetching projection objective lens is-1 times.
Wherein first lens of first lens combination are approximate plano-convex lens, and almost plane is towards the mask face; Second lens are biconcave lens.
Wherein first lens of first lens combination are made of high chromatic dispersion material, and second lens are made of low chromatic dispersion material.
Wherein first lens of second lens combination are biconcave lens; Second lens are biconvex lens; The 3rd lens are biconvex lens.
Wherein first lens of second lens combination are made of high chromatic dispersion material, and second lens are made of low chromatic dispersion material, and the 3rd lens are made of low chromatic dispersion material.
Wherein first lens of the 3rd lens combination are approximate plano-convex lens, and almost plane is towards the picture plane; Second lens are meniscus lens, and its concave surface is towards the picture plane; The 3rd lens are biconcave lens.
Wherein first lens of the 3rd lens combination are made of low chromatic dispersion material; Second lens are made of low chromatic dispersion material; The 3rd lens are made of high chromatic dispersion material.
Wherein high chromatic dispersion material comprises PBM2Y_OHAR, PBM1Y_OHARA, PBM6Y_OHARA.Low chromatic dispersion material comprises SFSL5Y_OHARA, SFPL51Y_OHARA.
A kind of projection objective lens optical system of the present invention has big wide exposure area, can the multiple aberration of well-corrected, distortion, and guarantee image Fang Yuanxin.Numerical aperture of objective is moderate, can provide background patents 1.5 times of visual fields to twice, and promptly half field-of-view 100mm can satisfy high yield lithographic equipment demand.
Description of drawings
Fig. 1 is a photoetching projection objective lens optical system synoptic diagram of the present invention;
Fig. 2 is a photoetching projection objective lens ray aberration curve map of the present invention;
Fig. 3 is photoetching projection objective lens distortion curve figure of the present invention;
Fig. 4 is photoetching projection objective lens object space of the present invention and picture side innermost being line chart far away.
Embodiment
Describe specific embodiments of the invention in detail below in conjunction with accompanying drawing.
Present embodiment eyeglass quantity is 16, and numerical aperture is 0.15, can guarantee the good imaging of exposure visual field in the diameter 200mm scope.
As shown in Figure 1, embodiment object lens 50 are 16 chip architectures, are sphere all, take symmetrical structure.Lens combination G51 is made of two lens 51,52.Lens 51 focal powers are for just, and approximate plane 501 is made of high chromatic dispersion material towards mask face R; Lens 52 focal powers are biconcave lens for negative, are made of low chromatic dispersion material.Lens combination G52 by three lens 54,54,55, constitute, that focal power is followed successively by is negative, positive, just.Lens combination G52 comprises a sub-lens group G52-1n, and sub-lens group G52-1n comprises the lens 53,54 of lens combination G52.Lens 53 are made of high chromatic dispersion material, and lens 54,55 are made of low chromatic dispersion material.Lens combination G53 is made of three lens 56,57,58, and focal power just is being followed successively by, positive and negative.Lens combination G53 comprises a sub-lens group G53-1n, and sub-lens group G53-1n comprises the lens 56,57 of lens combination G53, and lens 56,57 are made of low chromatic dispersion material.Lens 58 are made of high chromatic dispersion material.Lens combination G54 and lens combination G53 are about diaphragm AS symmetry; Lens combination G55 and G52 are about diaphragm AS symmetry; Lens combination G56 and G51 are about diaphragm AS symmetry.
Latter half of system symmetry forms-1 times enlargement ratio before the object lens, and vertical axial aberrations such as coma, distortion compensate automatically.
Lens combination G51 is made of the two positive negative lenses that separate, and has proofreaied and correct the curvature of field, astigmatism, guarantees the object space heart far away simultaneously.First lens 51 of lens combination G51 are made of PBM2Y_OHARA, and second lens 52 of lens combination G51 are made of SFPL51Y_OHARA, and the two forms anomalous dispersion combination.
The sub-lens group G52-1n of lens combination G52 comprises two lens 53,54, the biconcave lens that lens 53 constitute for PBL6Y_OHARA, the biconvex lens that lens 54 constitute for SFSL5Y_OHARA.Sub-lens group G52-1n forms the structure of similar thick bent moon formula lens with positive and negative lens, plays the effect of the further correction curvature of field and astigmatism.The biconvex lens that the 3rd lens 55 of lens combination G52 constitute for SFSL5Y_OHARA.
The sub-lens group G53-1n of lens combination G53 comprises two positive lenss 56,57, and lens 56,57 constitute by SFSL5Y_OHARA.The biconcave lens that the 3rd lens 58 of lens combination G53 constitute for PBL1Y_OHARA.Lens combination G53 has compensated the spherical aberration that lens combination G51, G52 produce, and remaining aberration.The effect of the latter half of lens combination G54 of system, G55, G56 is similar.
Each parameter request of embodiment is as shown in table 1
Table 1
| Operation wavelength | 365nm±3nm |
| Thing/as number formulary value aperture NA | 0.15 |
| Enlargement ratio | -1 |
| Visual field (diameter) | 200mm |
| Object image distance from | 1650mm |
| Thing/as side's work distance | 100.5mm |
Relational expression between following lens combination G51, G52, G54, G54 and sub-lens group lens thereof has further been established the basis that the object lens picture element is optimized.
Described each lens combination satisfies following relational expression:
0.013＜f
2/f
1＜0.028
-3.7＜f
3/f
2＜-6.2
0.019＜f
1-2/f1＜0.025
-8.4＜f
1n/f
2＜-6.9
-0.12＜f
2n/f
3＜-0.22
0.34＜V
1-1/V
1-2＜0.65
0.55＜V
2-1/V
2-2＜0.95
1.46＜V
3-2/V
3-3＜1.89
Wherein: f
1: the focal length of the first lens combination G51; f
2: the focal length of the second lens combination G52; f
3: the focal length of the 3rd lens combination G53;
f
1-2: the focal length of the first lens combination G51, second lens 52; f
1n: the focal length of the first sub-lens group G52-1n; f
2n: the focal length of the second sub-lens group G53-1n;
V
1-1And V
1-2: first lens 51 of the first lens combination G51 and the Abbe number of second lens 52;
V
2-1And V
2-2: first lens 53 of the second lens combination G52 and the Abbe number of second lens 54;
V
3-2And V
3-3: second lens 57 of the 3rd lens combination G53 and the Abbe number of the 3rd lens 58.
Owing to be-1x enlargement ratio system that lens combination G54, G55, G56 and corresponding sub-lens group, lens also should satisfy similar relational expression.
Table 2 has provided the specific design value of the projection objective of this example, and positive radius value is represented center of curvature the right on the surface, and negative radius value is represented the left side of the center of curvature on the surface.Between optical element thickness or two optical elements is to go up distance to the axle on next surface at interval.All dimensional units all are millimeters.
In the table 2, " S# " presentation surface numbering, " STOP " expression aperture diaphragm AS.In the radius item, " INF " represents infinitely great.
| S # | Radius | Thickness and spacing | Material | Remarks | |
| 0 | 1.00E+18 | 100.5448 | Operating distance WDI | ||
| 1 | -2.49E+03 | 49.92852 | PBM2Y_OHARA | L1 | |
| 2 | -265.36158 | 7.027256 | |||
| 3 | -8084.3386 | 20.04565 | SFPL51Y_OHARA | L2 | |
| 4 | 229.312027 | 172.4362 | |||
| 5 | -180.51269 | 43.70618 | | L3 | |
| 6 | 853.730686 | 7.441044 | |||
| 7 | 1003.506 | 62.6858 | SFSL5Y_OHARA | L4 | |
| 8 | -212.54774 | 48.41391 | |||
| 9 | 458.188242 | 48.39013 | SFSL5Y_OHARA | L5 | |
| 10 | -535.74649 | 118.024 | |||
| 11 | 314.863116 | 25.86282 | SFSL5Y_OHARA | L6 | |
| 12 | 3184.91458 | 7.494267 | |||
| 13 | 278.890782 | 39.37729 | SFSL5Y_OHARA | L7 | |
| 14 | 627.606481 | 15.15477 | |||
| 15 | -1656.5001 | 39.11947 | PBL1Y_OHARA | L8 | |
| 16 | 176.613164 | 17.73981 | |||
| 17 | 1.00E+18 | 17.73981 | (Stop) | ||
| 18 | -1.77E+02 | 39.11947 | | L9 | |
| 19 | 1656.50006 | 15.15477 | |||
| 20 | -627.60648 | 39.37729 | SFSL5Y_OHARA | L10 | |
| 21 | -278.89078 | 7.494267 | |||
| 22 | -3184.9146 | 25.86282 | SFSL5Y_OHARA | L11 | |
| 23 | -314.86312 | 118.024 | |||
| 24 | 535.74649 | 48.39013 | SFSL5Y_OHARA | L12 | |
| 25 | -458.18824 | 48.41391 | |||
| 26 | 212.547743 | 62.6858 | SFSL5Y_OHARA | L13 | |
| 27 | -1003.506 | 7.441044 | |||
| 28 | -853.73069 | 43.70618 | PBL6Y_OHARA | L14 | |
| 29 | 180.512689 | 172.4362 | |||
| 30 | -229.31203 | 20.04565 | SFPL51Y_OHARA | L15 | |
| 31 | 8084.33863 | 7.027256 | |||
| 32 | 265.361578 | 49.92852 | PBM2Y_OHARA | L16 | |
| 33 | 2487.97739 | 100.5448 | |||
| IMAGE | 1.00E+18 | -0.01822 |
Fig. 2 is the ray aberration curve map of present embodiment, and aberration is proofreaied and correct on the figure.
Fig. 3 is the invention photoetching projection objective lens distortion curve figure of present embodiment, and distortion is calibrated on the figure.
Fig. 4 is object space and the picture side innermost being line chart far away of present embodiment, and the heart far away is about 10mrad.
Described in this instructions is a kind of preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (12)
1. photoetching projection objective lens is used for a pattern that is positioned at the object plane of described projection objective is projected described projection objective as the plane, it is characterized in that six lens combination setting gradually from described object plane along optical axis totally 16 lens, comprising:
First lens combination with positive light coke;
Second lens combination with positive light coke;
The 3rd lens combination with negative power;
Aperture diaphragm;
The 4th lens combination with negative power;
The 5th lens combination with positive light coke; And
The 6th lens combination with positive light coke;
The 4th lens combination and the 3rd lens combination are with respect to the aperture diaphragm symmetry;
The 5th lens combination and second lens combination are with respect to the aperture diaphragm symmetry;
The 6th lens combination and first lens combination are with respect to the aperture diaphragm symmetry;
Wherein, described each lens combination satisfies following relational expression:
0.013＜f
2/f
1＜0.028
-3.7＜f
3/f
2＜-6.2
f
1: the focal length of first lens combination; f
2: the focal length of second lens combination; f
3: the focal length of the 3rd lens combination.
2. photoetching projection objective lens according to claim 1 is characterized in that:
Described first lens combination is made up of two lens, and first lens strength is for just, and second lens strength is for negative;
Described second lens combination is made up of three lens, and that focal power is followed successively by is negative, positive, just; First, second lens are wherein formed one first sub-lens group;
Described the 3rd lens combination is made of three lens, and focal power just is being followed successively by, positive and negative; First, second lens are wherein formed one second sub-lens group;
Satisfy following relational expression between lens combination and the sub-lens group:
0.019＜f
1-2/f1＜0.025
-8.4＜f
1n/f
2＜-6.9
-0.12＜f
2n/f
3＜-0.22
Wherein: f
1-2: the focal length of first lens combination, second lens; f
1n: the focal length of the first sub-lens group; f
2n: the focal length of the second sub-lens group.
3. photoetching projection objective lens according to claim 2 is characterized in that the objective material Abbe number satisfies following relation:
0.34＜V
1-1/V
1-2＜0.65
0.55＜V
2-1/V
2-2＜0.95
1.46＜V
3-2/V
3-3＜1.89
V
1-1And V
1-2: first lens of first lens combination and the Abbe number of second lens;
V
2-1And V
2-2: first lens of second lens combination and the Abbe number of second lens;
V
3-2And V
3-3: second lens of the 3rd lens combination and the Abbe number of the 3rd lens.
4. photoetching projection objective lens according to claim 3 is characterized in that the enlargement ratio of photoetching projection objective lens is-1 times.
5. photoetching projection objective lens according to claim 3, wherein first lens of first lens combination are approximate plano-convex lens, almost plane is towards the mask face; Second lens are biconcave lens.
6. according to the described photoetching projection objective lens of claim 3, wherein first lens of first lens combination are made of high chromatic dispersion material, and second lens are made of low chromatic dispersion material.
7. according to the described light projection photoetching objective lens of claim 3, wherein first lens of second lens combination are biconcave lens; Second lens are biconvex lens; The 3rd lens are biconvex lens.
8. according to the described photoetching projection objective lens of claim 3, wherein first lens of second lens combination are made of high chromatic dispersion material, and second lens are made of low chromatic dispersion material, and the 3rd lens are made of low chromatic dispersion material.
9. according to the described photoetching projection objective lens of claim 3, wherein first lens of the 3rd lens combination are approximate plano-convex lens, and almost plane is towards the picture plane; Second lens are meniscus lens, and its concave surface is towards the picture plane; The 3rd lens are biconcave lens.
10. according to the described light projection photoetching objective lens of claim 3, wherein first lens of the 3rd lens combination are made of low chromatic dispersion material; Second lens are made of low chromatic dispersion material; The 3rd lens are made of high chromatic dispersion material.
11. according to claim 6,8, one of 10 described lithographic objectives, wherein high chromatic dispersion material comprises PBM2Y_OHAR, PBM1Y_OHARA, PBM6Y_OHARA.
12. according to claim 6,8, one of 10 described lithographic objectives, wherein low chromatic dispersion material comprises SFSL5Y_OHARA, SFPL51Y_OHARA.
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|---|---|---|---|
| CN 201010196221 CN102279457B (en) | 2010-06-09 | 2010-06-09 | Single-power large-viewing field photoetching projection objective lens |
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|---|---|---|---|
| CN 201010196221 CN102279457B (en) | 2010-06-09 | 2010-06-09 | Single-power large-viewing field photoetching projection objective lens |
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| CN102279457B CN102279457B (en) | 2013-05-22 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278912A (en) * | 2013-06-19 | 2013-09-04 | 中国科学院光电技术研究所 | Catadioptric ultraviolet lithography objective lens |
| CN103926801A (en) * | 2014-04-01 | 2014-07-16 | 中国科学院上海光学精密机械研究所 | Projection optical system |
| CN104122669A (en) * | 2014-08-07 | 2014-10-29 | 张家港鹏博光电科技有限公司 | Symmetrical double telecentric projection optical system and photoetching apparatus |
| CN109375480A (en) * | 2018-12-30 | 2019-02-22 | 上海微电子装备（集团）股份有限公司 | A kind of photoetching projection objective lens and litho machine |
| WO2019129051A1 (en) * | 2017-12-29 | 2019-07-04 | 上海微电子装备（集团）股份有限公司 | Optical system of projection objective lens, and mask aligner |
| CN110941144A (en) * | 2018-09-21 | 2020-03-31 | 上海微电子装备（集团）股份有限公司 | Device, method and equipment for testing distortion and field curvature of objective lens |
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| CN101356466A (en) * | 2006-05-24 | 2009-01-28 | 卡西欧计算机株式会社 | Zoom lens having four lens groups |
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| JP2006071893A (en) * | 2004-09-01 | 2006-03-16 | Canon Inc | Optical scanner and image forming apparatus using the same |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278912A (en) * | 2013-06-19 | 2013-09-04 | 中国科学院光电技术研究所 | Catadioptric ultraviolet lithography objective lens |
| CN103278912B (en) * | 2013-06-19 | 2015-07-08 | 中国科学院光电技术研究所 | Catadioptric ultraviolet lithography objective lens |
| CN103926801A (en) * | 2014-04-01 | 2014-07-16 | 中国科学院上海光学精密机械研究所 | Projection optical system |
| CN103926801B (en) * | 2014-04-01 | 2016-03-09 | 中国科学院上海光学精密机械研究所 | Projection optical system |
| CN104122669A (en) * | 2014-08-07 | 2014-10-29 | 张家港鹏博光电科技有限公司 | Symmetrical double telecentric projection optical system and photoetching apparatus |
| CN104122669B (en) * | 2014-08-07 | 2016-08-10 | 张家港鹏博光电科技有限公司 | A kind of symmetrical expression double-telecentric projection optical system and lithographic equipment |
| WO2019129051A1 (en) * | 2017-12-29 | 2019-07-04 | 上海微电子装备（集团）股份有限公司 | Optical system of projection objective lens, and mask aligner |
| CN110941144A (en) * | 2018-09-21 | 2020-03-31 | 上海微电子装备（集团）股份有限公司 | Device, method and equipment for testing distortion and field curvature of objective lens |
| CN109375480A (en) * | 2018-12-30 | 2019-02-22 | 上海微电子装备（集团）股份有限公司 | A kind of photoetching projection objective lens and litho machine |
| TWI715392B (en) * | 2018-12-30 | 2021-01-01 | 大陸商上海微電子裝備（集團）股份有限公司 | Photoetching projection objective lens and photoetching machine |
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| CN102279457B (en) | 2013-05-22 |
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