CN114850693A - Laser cutting and splitting process and device for mosfet wafer - Google Patents
Laser cutting and splitting process and device for mosfet wafer Download PDFInfo
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- CN114850693A CN114850693A CN202210392172.2A CN202210392172A CN114850693A CN 114850693 A CN114850693 A CN 114850693A CN 202210392172 A CN202210392172 A CN 202210392172A CN 114850693 A CN114850693 A CN 114850693A
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- 238000003698 laser cutting Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000008569 process Effects 0.000 title claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 60
- 239000010432 diamond Substances 0.000 claims abstract description 60
- 238000001179 sorption measurement Methods 0.000 claims abstract description 57
- 238000001816 cooling Methods 0.000 claims abstract description 55
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000000835 fiber Substances 0.000 claims abstract description 19
- 239000000110 cooling liquid Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 18
- 238000001125 extrusion Methods 0.000 claims description 16
- 238000007667 floating Methods 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 claims description 16
- 230000005389 magnetism Effects 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 10
- 238000005086 pumping Methods 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 5
- 239000002657 fibrous material Substances 0.000 claims description 5
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008602 contraction Effects 0.000 claims description 3
- 239000012781 shape memory material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 230000002146 bilateral effect Effects 0.000 claims 1
- 239000006247 magnetic powder Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 239000011863 silicon-based powder Substances 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 9
- 230000003068 static effect Effects 0.000 abstract description 9
- 210000001503 joint Anatomy 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000002955 isolation Methods 0.000 description 14
- 239000011324 bead Substances 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000004378 air conditioning Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 235000013312 flour Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention discloses a laser cutting and splitting process and equipment of a mosfet wafer, belonging to the technical field of wafer cutting and splitting, wherein the process and equipment are realized in the way that the temperature is increased in the process of scribing a diamond cutter body, a deformation memory magnetism-insulating ring body is expanded, magnetism-insulating powder is diffused, the magnetism-insulating effect is reduced, an adsorption movable ball is twisted under the attraction force between a magnetic ball and a magnet block, an adsorption port is in butt joint with a connecting pipe, a deformation memory spring is contracted to pull a piston to move, silicon powder and hot gas are extracted to enter an air extraction cylinder, the scribing motion of the diamond cutter body causes collision balls to collide with each other and rub to generate static electricity, the silicon powder enters the adsorption movable ball through the electrostatic adsorption capacity and is adhered to superfine fibers, the interference on scribing is avoided, and meanwhile, the piston blows a cooling block to emit cold air which is matched with the flowing of cooling liquid in the scribing process to cool the wafer, the possibility of oxidizing silicon powder to generate an oxide layer is reduced, the interference on the cutting of the split piece is avoided, and the precision is improved.
Description
Technical Field
The invention relates to the technical field of wafer cutting and splitting, in particular to a laser cutting and splitting process and device for a mosfet wafer.
Background
The Mosfet is a field effect transistor which can be widely used in analog circuits and digital circuits, a Mosfet wafer is a silicon wafer for manufacturing the Mosfet tube, the Mosfet wafer needs to be subjected to laser cutting and splitting to be split into pieces in the processing process of the Mosfet wafer, and the Mosfet wafer needs to be subjected to scribing pretreatment before the cutting and splitting to form a cutting channel, so that the laser accurate cutting and splitting of the Mosfet are facilitated, errors are reduced, and losses are reduced.
In the prior art, scribing pretreatment is usually diamond knife scribing, but silicon powder is generated in the scribing process to interfere scribing, and meanwhile, along with scribing on a silicon wafer by a diamond knife, the silicon powder is subjected to oxidation reaction with the silicon wafer and the surrounding temperature is increased, so that a silicon dioxide oxide layer is formed, the cutting and splitting treatment of the Mosfet wafer is influenced, the processing precision is greatly reduced, and the use cost is increased.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a laser cutting and splitting process and equipment of a mosfet wafer, which can realize that the temperature is driven to rise in the scribing process of a diamond cutter body, so that a deformation memory magnetic isolation ring body is expanded, magnetic isolation powder is diffused, the magnetic isolation effect is reduced, an adsorption movable ball is twisted under the attraction force between the magnetic ball and a magnet block, an adsorption port is butted with a connecting pipe, a deformation memory spring is contracted to pull a piston to move, silicon powder and hot gas are extracted to enter an air extracting cylinder, the scribing motion of the diamond cutter body causes collision balls to mutually collide and rub to generate static electricity, the silicon powder enters the adsorption movable ball through the electrostatic adsorption capacity and is attached to superfine fibers to avoid the interference on scribing, and meanwhile, cold air on a piston blowing cooling block is diffused to be matched with cold air diffused by cooling liquid in the scribing process to cool, the possibility of oxidizing silicon powder to generate an oxide layer is reduced, the interference on the cutting of the split piece is avoided, and the precision is improved.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A laser cutting and splitting process and equipment for a mosfet wafer comprise the following steps:
s1, preparing a wafer needing to be cut and split, and then opening a laser cutting machine to fix the wafer on an operation table top on a scribing mechanism of the laser cutting machine;
s2, driving a scribing mechanism to perform scribing pretreatment on the wafer through a laser cutting machine to form a cutting channel;
s3, fixing the wafer after the scribing pretreatment on an operation table top on a cutting and splitting mechanism, and then driving the wafer to perform cutting and splitting treatment along a cutting path through a laser cutting machine;
and S4, after the cutting and splitting are finished, taking away the wafer after the cutting and splitting, and cleaning the operation table top.
Further, the scribing mechanism in S1 includes a diamond cutter body, the interior of the diamond cutter body is hollow, the outer end of the diamond cutter body is sleeved with an absorbing frame, the inner top end of the absorbing frame is fixedly connected with two air extracting drums which are bilaterally symmetrical, the lower ends of the air extracting drums penetrate through the inner bottom end of the absorbing frame and are communicated with the outer side of the absorbing frame, pistons are slidably connected in the air extracting drums, a deformation memory spring is fixedly connected between the upper end of the piston and the inner top end of the air extracting drum, connecting pipes are fixedly connected between the air extracting drums and the diamond cutter body and respectively communicated with the interiors of the air extracting drums and the diamond cutter body, the inner side wall of the diamond cutter body is rotatably connected with an absorbing movable ball through a bearing and a rotating shaft, a torsion spring is sleeved on the rotating shaft, the outer end of the torsion spring is fixedly connected with the rear end of the absorbing movable ball, and an absorbing drum is fixedly connected between the inner wall of the absorbing movable ball, the absorption cylinder is internally provided with a plurality of small collision balls, the outer end of the absorption cylinder is fixedly connected with a plurality of superfine fibers, the upper end and the lower end of the absorption movable ball are provided with absorption openings, the inner top end and the inner bottom end of the absorption movable ball are fixedly connected with two deformation memory magnetism-isolating ring bodies which are bilaterally symmetrical, the deformation memory magnetism-isolating ring bodies are internally and fixedly connected with fixed balls, magnetic balls are fixedly connected between the inner walls of the fixed balls, the deformation memory magnetism-isolating ring bodies are internally filled with magnetism-isolating powder, the left end and the right end of the diamond cutter body are fixedly connected with two magnet blocks which are vertically symmetrical, so that when the diamond cutter body scribes on a wafer, a large amount of heat can be generated to drive the temperature to rise, the deformation film of the deformation memory magnetism-isolating ring bodies inside the diamond cutter body is heated to expand to drive the magnetism-isolating powder to diffuse, and the magnetism of the magnetic balls can not be effectively isolated, and influenced by the attractive force of the magnet block, the adsorption movable ball is driven to twist, the adsorption port is in butt joint with the connecting pipe, the scribing movement of the diamond cutter body drives the collision small balls inside the diamond cutter body to collide and rub with each other, static electricity is generated, heat is transferred into the absorption frame, the deformation memory spring is driven to contract, the piston is pulled to move upwards, silicon powder generated in the scribing process is extracted, and under the action of electrostatic adsorption capacity, the silicon powder enters the adsorption movable ball through the connecting pipe and the adsorption port and is attached to superfine fibers, so that the interference on the scribing of the diamond cutter body is avoided.
Further, both ends all inlay about the diamond cutter body and establish and install the cooling frame, two the inner bottom end of cooling frame all is equipped with the cooling block, two the one end that the cooling frame was kept away from each other is all dug there is the opening, two the equal fixedly connected with rubber mounting, two of inner wall of opening the one end that the cooling frame is close to each other all installs the check valve, two the one end that the aspiration tube is close to each other is all dug there is the mouth of blowing, two the mouth of blowing is located the one side that two rubber mountingkept away from each other respectively, and when deformation memory spring pulling piston upward movement, the inside air of extrusion aspiration tube made it blow off through the mouth of blowing, makes the rubber mounting open through gaseous blowing, makes in gaseous entering the cooling frame, blows the air conditioning that the cooling block gived off and blows off through the check valve, cools down.
Further, the inner side wall of the diamond cutter body is fixedly connected with a conical cooling cylinder, cooling liquid is filled in the conical cooling cylinder, a plurality of floating balls are arranged in the conical cooling cylinder, the floating balls are positioned on a cooling liquid level, heat absorption particles are filled in the floating balls, the outer end of each floating ball is coated with a heat conduction coating, a liquid permeable membrane is fixedly connected between the inner side walls of the conical cooling cylinder, two rebound plates which are bilaterally symmetrical are arranged in the conical cooling cylinder, two telescopic rods are fixedly connected between the end, away from each other, of each rebound plate and the inner side wall of the conical cooling cylinder, an expansion spring is sleeved at the outer end of each telescopic rod, the outer end of each expansion spring is fixedly connected with the end, close to each telescopic rod, of each rebound plate, the cutting motion of the diamond cutter body drives the cooling liquid in the conical cooling cylinder to flow, and the cold air is accelerated to be emitted, and the flow of coolant liquid makes the floater take place the motion, collision each other and with rebound board collision bounce back under telescopic link and expanding spring's effect, increase the mobility of coolant liquid, add giving off of piece air conditioning, the inside heat of the heat absorption particle in the floater can effectual absorption toper cooling cylinder simultaneously, air conditioning overflows through the liquid permeable membrane, spread, further cooling treatment, avoid the silicon powder that the lane in-process produced to react with the oxygen in the air under high temperature environment, form the silica oxide layer, lead to the fact the influence to subsequent laser cutting lobe of a leaf, prevent to cause the influence to the machining precision.
Furthermore, the inner side wall of the diamond cutter body is fixedly connected with two bilaterally symmetrical flow guide seats, an extrusion valve is fixedly connected between the two flow guide seats, the initial state of the extrusion valve is a folded state, the extrusion valve is positioned on the upper side of the adsorption movable ball, the outer end of the adsorption movable ball is fixedly connected with a plurality of uniformly distributed capillary fibers, the capillary fibers flow upwards along with the heating of the air in the diamond cutter body to drive the extrusion valve to be opened, the cold air supplements the cold air to reduce the temperature in the adsorption movable ball, meanwhile, part of the cold air flows upwards to be contacted and neutralized with the hot air to cool down, the neutralized air begins to be condensed into liquid beads along with the temperature reduction, and the liquid beads flow down along the flow guide seats under slow accumulation, flow down from the extrusion valve and enter the conical cooling cylinder through a liquid permeable membrane under the flow guide effect of the capillary fibers, and (4) recovering.
Further, the shape memory spring adopts shape memory alloy material to make, the initial state of shape memory spring is the extension state, shape memory magnetic isolation ring body adopts polymer shape memory material to make, the initial state of shape memory magnetic isolation ring body is the contraction state, and shape memory alloy and polymer shape memory material all have the memory function, and along with the temperature rise, shape memory spring takes place to deform, contracts, and shape memory magnetic isolation ring body takes place to deform, expands, and along with the temperature reduction, shape memory spring begins slowly to resume to its initial extension state, and shape memory magnetic isolation ring body also begins to resume to its initial contraction state.
Furthermore, the outer end fixedly connected with sealing washer of piston, the outer end of sealing washer and the inside wall in close contact with of pump bowl, the setting of sealing washer can reduce the possibility that silica flour permeates into through the gap between piston and the pump bowl, improves the leakproofness.
Further, the collision small balls are made of chemical fiber materials, the magnetism insulation powder is made of Fe-Ni alloy materials, the content of Ni is 80%, static electricity is generated when the collision small balls made of the chemical fiber materials collide with each other, and the magnetism of the magnetism insulation powder made of the Fe-Ni alloy materials can be effectively isolated in a dense state.
Further, two couples the one end that the magnetism ball was kept away from each other is the setting of N utmost point, and two couples the one end that the magnet piece is close to each other is the setting of S utmost point, appeal between magnetism ball and the magnet piece is greater than the elasticity of torsional spring, is greater than the elasticity of torsional spring through appeal between magnetism ball and the magnet piece, makes the absorption activity ball take place to twist reverse, makes the one end that is close to each other after magnetism ball and the magnet piece twist reverse set up for the opposite sex, tightly attracts, realizes that connecting pipe and absorption mouth dock mutually.
Furthermore, the pipe diameter of the connecting pipe is matched with the caliber of the adsorption port, and the pipe diameter of the connecting pipe is matched with the caliber of the adsorption port, so that the silica powder is conveniently transferred.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
the scheme is that in the scribing process of the diamond cutter body, the driving temperature rises, the deformation memory magnetism-insulating ring body is made to expand, magnetism-insulating powder is diffused, the magnetism-insulating effect is reduced, the adsorption movable ball is made to twist under the attraction force between the magnetic ball and the magnet block, the adsorption port is made to be in butt joint with the connecting pipe, the deformation memory spring is made to contract to pull the piston to move, silicon powder and hot gas are extracted to enter the air suction tube, the scribing motion of the diamond cutter body makes collision balls collide with each other to rub to generate static electricity, the silicon powder enters the adsorption movable ball through the electrostatic adsorption capacity and adheres to superfine fibers, interference on scribing is avoided, meanwhile, the piston blows cold air on the cooling block to emit cold air which is emitted by flowing of cooling liquid in the matching scribing process to cool down, the possibility that the silicon powder is oxidized to generate an oxide layer is reduced, interference on a cutting piece is avoided, and the precision is improved.
Drawings
FIG. 1 is a schematic view of a laser cutting and splintering process of the present invention;
FIG. 2 is a schematic view of the overall structure of the laser cutting machine according to the present invention;
FIG. 3 is a schematic cross-sectional view of a diamond tool body according to the present invention;
FIG. 4 is a schematic top sectional view of the adsorption movable ball according to the present invention;
FIG. 5 is a schematic cross-sectional view of a fixing ball according to the present invention;
FIG. 6 is a schematic view showing the dynamic change of the adsorption movable ball during twisting in the present invention;
FIG. 7 is a schematic cross-sectional view of a cooling frame according to the present invention;
FIG. 8 is a schematic cross-sectional view of a conical cooling cylinder according to the present invention;
fig. 9 is an enlarged schematic view of a portion a in fig. 8.
The reference numbers in the figures illustrate:
1. a laser cutting machine; 2. a scribing mechanism; 3. a cutting and splitting mechanism; 4. a diamond cutter body; 5. an extraction frame; 6. an air pumping cylinder; 7. a piston; 8. a deformation memory spring; 9. a connecting pipe; 10. adsorbing the movable ball; 11. a torsion spring; 12. an adsorption port; 13. fixing the ball; 14. a magnetic ball; 15. a deformation memory magnet-isolating ring body; 16. a capillary fiber; 17. an adsorption cylinder; 18. superfine fibers; 19. bumping the small ball; 20. a magnet block; 21. a cooling frame; 22. a rubber sealing sheet; 23. a one-way valve; 24. a flow guide seat; 25. squeezing the valve; 26. a conical cooling cylinder; 27. a liquid permeable membrane; 28. a floating ball; 29. a rebound board; 30. a telescopic rod; 31. a telescoping spring.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "fitted/connected", "connected", and the like, are to be interpreted broadly, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example (b):
referring to fig. 1-2, a laser dicing and splitting process and apparatus for a mosfet wafer includes the following steps:
s1, preparing a wafer needing to be cut and split, then opening the laser cutting machine 1, and fixing the wafer on an operation table top on the scribing mechanism 2;
s2, driving the scribing mechanism 2 through the laser cutting machine 1 to perform scribing pretreatment on the wafer to form a cutting path;
s3, fixing the wafer after the scribing pretreatment on an operation table top of a cutting and splitting mechanism 3, and then driving the wafer to perform cutting and splitting treatment along a cutting path through a laser cutting machine 1;
and S4, after the cutting and splitting are finished, taking away the wafer after the cutting and splitting, and cleaning the operation table top.
Referring to fig. 2-6, the scribing mechanism 2 in S1 includes a diamond cutter body 4, the interior of the diamond cutter body 4 is hollow, the outer end of the diamond cutter body 4 is sleeved with an absorbing frame 5, the inner top end of the absorbing frame 5 is fixedly connected with two air cylinders 6 which are bilaterally symmetrical, the lower ends of the air cylinders 6 penetrate through the inner bottom end of the absorbing frame 5 and are communicated with the outer side thereof, a piston 7 is slidably connected in the air cylinder 6, a deformation memory spring 8 is fixedly connected between the upper end of the piston 7 and the inner top end of the air cylinder 6, a connecting pipe 9 is fixedly connected between the air cylinder 6 and the diamond cutter body 4, the connecting pipe 9 is respectively communicated with the interiors of the air cylinder 6 and the diamond cutter body 4, the inner side wall of the diamond cutter body 4 is rotatably connected with an absorbing movable ball 10 through a bearing and a rotating shaft, a torsion spring 11 is sleeved on the rotating shaft, the outer end of the torsion spring 11 is fixedly connected with the rear end of the absorbing movable ball 10, an adsorption cylinder 17 is fixedly connected between the inner walls of the adsorption movable balls 10, a plurality of collision small balls 19 are arranged in the adsorption cylinder 17, a plurality of superfine fibers 18 are fixedly connected to the outer end of the adsorption cylinder 17, adsorption ports 12 are drilled at the upper end and the lower end of the adsorption movable balls 10, two deformation memory magnetic isolation ring bodies 15 which are bilaterally symmetrical are fixedly connected to the inner top end and the inner bottom end of the adsorption movable balls 10, fixed balls 13 are fixedly connected to the inner ends of the deformation memory magnetic isolation ring bodies 15, magnetic balls 14 are fixedly connected between the inner walls of the fixed balls 13, magnetic isolation powder is filled in the deformation memory magnetic isolation ring bodies 15, two magnet blocks 20 which are vertically symmetrical are fixedly connected to the left end and the right end of the diamond cutter body 4, and when the diamond cutter body 4 scratches a wafer, a large amount of heat can be generated to drive the temperature to rise, so that the deformation memory magnetic isolation ring bodies 15 inside the diamond cutter body is subjected to thermal deformation and expands, the magnetism insulating powder is driven to diffuse, so that the magnetism of the magnetic ball 14 cannot be effectively isolated, the absorption ball 10 is driven to twist under the influence of the attraction of the magnet block 20, the absorption port 12 is in butt joint with the connecting pipe 9, the scribing movement of the diamond cutter body 4 drives the collision small balls 19 in the absorption ball to collide with each other and rub to generate static electricity, heat is transferred into the absorption frame 5 to drive the deformation memory spring 8 to contract, the piston 7 is pulled to move upwards, silicon powder generated in the scribing process is extracted, and under the action of the electrostatic absorption capacity, the silicon powder enters the absorption ball 10 through the connecting pipe 9 and the absorption port 12 and is adhered to the superfine fibers 18, and the interference on the scribing of the diamond cutter body 4 is avoided.
Referring to fig. 3 and 7, the cooling frames 21 are installed at the left end and the right end of the diamond cutter body 4, the cooling blocks are arranged at the inner bottom ends of the two cooling frames 21, openings are cut in the ends, far away from each other, of the two cooling frames 21, rubber sealing pieces 22 are fixedly connected to the inner walls of the two openings, one-way valves 23 are installed at the ends, close to each other, of the two cooling frames 21, air blowing ports are cut in the ends, close to each other, of the two air pumping cylinders 6, the two air blowing ports are located on the sides, far away from each other, of the two rubber sealing pieces 22, when the piston 7 is pulled by the deformation memory spring 8 to move upwards, air inside the air pumping cylinders 6 is squeezed, the air is blown out through the air blowing ports, the rubber sealing pieces 22 are opened through blowing of the air, the air enters the cooling frames 21, and cold air blown out from the cooling blocks is blown out through the one-way valves 23 to cool.
Referring to fig. 3 and 8-9, a conical cooling cylinder 26 is fixedly connected to the inner side wall of the diamond cutter body 4, cooling liquid is filled in the conical cooling cylinder 26, a plurality of floating balls 28 are arranged in the conical cooling cylinder 26, the floating balls 28 are located on the cooling liquid level, heat absorbing particles are filled in the floating balls 28, a heat conducting coating is coated on the outer ends of the floating balls 28, a liquid permeable membrane 27 is fixedly connected between the inner side walls of the conical cooling cylinder 26, two bilaterally symmetrical rebounding plates 29 are arranged in the conical cooling cylinder 26, two telescopic rods 30 are fixedly connected between the ends, far away from each other, of the two rebounding plates 29 and the inner side wall of the conical cooling cylinder 26, a telescopic spring 31 is sleeved at the outer end of each telescopic rod 30, the outer end of the telescopic spring 31 is fixedly connected with the end, near the telescopic rod 30, of the rebounding plate 29, the scribing movement of the diamond cutter body 4 drives the cooling liquid inside the conical cooling cylinder 26 to flow, accelerate giving off of air conditioning, and the flow of coolant liquid makes floater 28 take place the motion, collision each other and with rebound board 29 collision bounce back under the effect of telescopic link 30 and expanding spring 31, increase the mobility of coolant liquid, add giving off of piece air conditioning, simultaneously the heat absorption particle in the floater 28 can the inside heat of effectual absorption toper cooling cylinder 26, air conditioning overflows through liquid permeable membrane 27, diffuse, further cooling treatment, avoid the silica flour that the scribing in-process produced to react with the oxygen in the air under high temperature environment, form the silica oxide layer, cause the influence to subsequent laser cutting lobe of a leaf, prevent to cause the influence to the machining precision.
Referring to fig. 3, the inner side wall of the diamond cutter body 4 is fixedly connected with two bilaterally symmetrical flow guide seats 24, an extrusion valve 25 is fixedly connected between the two flow guide seats 24, the initial state of the extrusion valve 25 is a folded state, the extrusion valve 25 is positioned on the upper side of the adsorption movable ball 10, the outer end of the adsorption movable ball 10 is fixedly connected with a plurality of uniformly distributed capillary fibers 16, the air inside the diamond cutter body 4 is heated and flows upwards to drive the extrusion valve 25 to be opened, the cold air supplements to reduce the temperature inside the adsorption movable ball, meanwhile, part of the cold air flows upwards to be contacted and neutralized with the hot air to cool down, and as the temperature is reduced, the neutralized air begins to be condensed into liquid beads, and slowly accumulates, the permeable membrane flows down along the flow guide seats 24, flows down from the extrusion valve 25 and enters the conical cooling cylinder 26 through the liquid 27 under the flow guide effect of the capillary fibers 16, and (4) recovering.
Referring to fig. 6, the shape-change memory spring 8 is made of a shape-change memory alloy material, the initial state of the shape-change memory spring 8 is an extended state, the shape-change memory magnet-isolating ring body 15 is made of a polymer shape-change memory material, the initial state of the shape-change memory magnet-isolating ring body 15 is a contracted state, both the shape-change memory alloy and the polymer shape-change memory material have memory functions, as the temperature rises, the shape-change memory spring 8 deforms and contracts, and the shape-change memory magnet-isolating ring body 15 deforms and expands, as the temperature falls, the shape-change memory spring 8 starts to slowly recover to its initial extended state, and the shape-change memory magnet-isolating ring body 15 also starts to recover to its initial contracted state, the outer end of the piston 7 is fixedly connected with a sealing ring, the outer end of the sealing ring is in close contact with the inner side wall of the air extracting cylinder 6, and the sealing ring is arranged to reduce the possibility that silicon powder penetrates through the gap between the piston 7 and the air extracting cylinder 6, the sealing performance is improved.
Referring to fig. 3-6, the collision beads 19 are made of chemical fiber material, the magnetic isolation powder is made of Fe-Ni alloy material, the content of Ni is 80%, the collision beads 19 made of chemical fiber material generate static electricity when colliding with each other, the magnetic isolation powder made of Fe-Ni alloy material can effectively isolate magnetism in a dense state, the ends of two pairs of magnetic beads 14 away from each other are both N-pole arranged, the ends of two pairs of magnet blocks 20 close to each other are both S-pole arranged, the attraction force between the magnetic beads 14 and the magnet blocks 20 is greater than the elastic force of the torsion spring 11, the attraction movable bead 10 is twisted by the attraction force between the magnetic beads 14 and the magnet blocks 20 being greater than the elastic force of the torsion spring 11, the ends of the magnetic beads 14 and the magnet blocks 20 close to each other after being twisted are opposite arranged and tightly attracted, so that the connection pipe 9 is in butt connection with the adsorption port 12, the pipe diameter of the connection pipe 9 is matched with the caliber of the adsorption port 12, the pipe diameter of the connecting pipe 9 is matched with the caliber of the adsorption port 12, so that the silicon powder is convenient to transfer.
In the invention, when the related technicians use the scribing mechanism 2 driven by the laser cutting machine 1 to work, the diamond cutter body 4 scribes on the wafer, and in the scribing process, a large amount of heat is generated to drive the temperature to rise, so that the deformation memory magnet insulating ring body 15 inside the diamond cutter body is heated to deform and expand to drive the magnet insulating powder to diffuse, the magnetism of the magnetic ball 14 cannot be effectively isolated, and the absorption movable ball 10 is driven to twist under the influence of the attraction of the magnet block 20, so that the absorption port 12 is in butt joint with the connecting pipe 9, and the scribing movement of the diamond cutter body 4 drives the collision small balls 19 inside the diamond cutter body to mutually collide and rub to generate static electricity, and the heat is transferred into the absorption frame 5 to drive the deformation memory spring 8 to contract, the piston 7 is pulled to move upwards, silicon powder generated in the scribing process is extracted, and under the action of electrostatic absorption capacity, silicon powder enters the adsorption movable ball 10 through the connecting pipe 9 and the adsorption port 12 and is adhered on the superfine fiber 18, a large amount of heat is generated to drive the temperature to rise, the deformation memory magnetism-insulating ring body 15 in the adsorption movable ball is heated to form a deformation film to expand, magnetism-insulating powder is driven to diffuse, the magnetism of the magnetic ball 14 cannot be effectively isolated, the adsorption movable ball 10 is driven to twist under the influence of the attraction of the magnet block 20, the adsorption port 12 is connected with the connecting pipe 9, the scribing movement of the diamond cutter body 4 drives the collision small balls 19 in the adsorption movable ball to collide with each other and rub to generate static electricity, the heat is transferred into the absorption frame 5 to drive the deformation memory spring 8 to contract, the piston 7 is pulled to move upwards to extract the silicon powder generated in the scribing process, and the silicon powder enters the adsorption movable ball 10 through the connecting pipe 9 and the adsorption port 12 under the action of electrostatic adsorption capacity, the cooling liquid is attached to the superfine fiber 18, and the scribing movement of the diamond cutter body 4 drives the cooling liquid in the conical cooling cylinder 26 to flow, so that the diffusion of the cold air is accelerated, the floating ball 28 moves due to the flow of the cooling liquid, the floating ball collides with each other and the rebound plate 29 and rebounds under the action of the telescopic rod 30 and the telescopic spring 31, the fluidity of the cooling liquid is increased, the diffusion of the cold air is increased, meanwhile, the heat absorption particles in the floating ball 28 can effectively absorb the heat in the conical cooling cylinder 26, the cold air overflows through the liquid permeable membrane 27 to be diffused, the temperature is further reduced, the silicon powder generated in the scribing process is prevented from reacting with the oxygen in the air under the high-temperature environment to form a silicon dioxide oxide layer, the subsequent laser cutting split is influenced, the air in the diamond cutter body 4 flows upwards along with the heating, and the extrusion valve 25 is driven to be opened, and the cold air is supplemented to reduce the temperature inside the wafer, meanwhile, part of the cold air flows upwards to be contacted and neutralized with hot air, so as to reduce the temperature, the neutralized gas begins to be condensed into liquid beads along with the temperature reduction, and flows down along the flow guide seat 24 and flows down from the extrusion valve 25, and enters the conical cooling cylinder 26 through the liquid permeable membrane 27 under the flow guide effect of the capillary fibers 16 to be recovered, after the scribing is finished, the wafer is taken down and fixed on the operation table top of the wafer cutting mechanism 3, and is driven by the laser cutting machine 1 to carry out the laser cutting and wafer cracking treatment.
The above; but are merely preferred embodiments of the invention; the scope of the invention is not limited thereto; any person skilled in the art is within the technical scope of the present disclosure; the technical scheme and the improved concept of the invention are equally replaced or changed; are intended to be covered by the scope of the present invention.
Claims (10)
1. A laser cutting and splitting process and device for a mosfet wafer are characterized in that: the method comprises the following steps:
s1, preparing a wafer needing to be cut and split, then opening the laser cutting machine (1), and fixing the wafer on an operation table top on the scribing mechanism (2);
s2, driving the scribing mechanism (2) through the laser cutting machine (1) to perform scribing pretreatment on the wafer to form a cutting channel;
s3, fixing the wafer subjected to scribing pretreatment on an operation table top on a cutting and splitting mechanism (3), and then driving the wafer to perform cutting and splitting treatment along a cutting path through a laser cutting machine (1);
and S4, after the cutting and splitting are finished, taking away the wafer after the cutting and splitting, and cleaning the operation table top.
2. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 1, wherein: the scribing mechanism (2) in the S1 comprises a diamond cutter body (4), the interior of the diamond cutter body (4) is hollow, an absorbing frame (5) is sleeved at the outer end of the diamond cutter body (4), two air pumping cylinders (6) which are bilaterally symmetrical are fixedly connected to the inner top end of the absorbing frame (5), the lower ends of the air pumping cylinders (6) penetrate through the inner bottom end of the absorbing frame (5) and are communicated with the outer side of the absorbing frame, pistons (7) are connected in the air pumping cylinders (6) in a sliding mode, deformation memory springs (8) are fixedly connected between the upper ends of the pistons (7) and the inner top ends of the air pumping cylinders (6), connecting pipes (9) are fixedly connected between the air pumping cylinders (6) and the diamond cutter body (4), the connecting pipes (9) are respectively communicated with the interiors of the air pumping cylinders (6) and the diamond cutter body (4), and the inner side wall of the diamond cutter body (4) is rotatably connected with an absorbing movable ball (10) through a bearing and a rotating shaft, the rotating shaft is sleeved with a torsion spring (11), the outer end of the torsion spring (11) is fixedly connected with the rear end of an adsorption movable ball (10), an adsorption cylinder (17) is fixedly connected between the inner walls of the adsorption movable ball (10), a plurality of collision small balls (19) are arranged in the adsorption cylinder (17), a plurality of superfine fibers (18) are fixedly connected with the outer end of the adsorption cylinder (17), adsorption ports (12) are chiseled at the upper end and the lower end of the adsorption movable ball (10), two deformation memory absolute magnetic ring bodies (15) which are bilaterally symmetrical are fixedly connected with the inner top end and the inner bottom end of the adsorption movable ball (10), a fixed ball (13) is fixedly connected in the deformation memory absolute magnetic ring body (15), a magnetic ball (14) is fixedly connected between the inner walls of the fixed ball (13), and absolute magnetic powder is filled in the deformation memory absolute magnetic ring body (15), the left end and the right end of the diamond cutter body (4) are fixedly connected with two magnet blocks (20) which are vertically symmetrical.
3. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: both ends all inlay about diamond cutter body (4) and establish and install cooling frame (21), two the inner bottom end of cooling frame (21) all is equipped with the cooling piece, two the one end of keeping away from each other of cooling frame (21) is all dug there is the opening, two the equal fixedly connected with rubber mounting (22) of inner wall of opening, two check valve (23) are all installed to the one end that cooling frame (21) are close to each other, two the one end that aspiration cylinder (6) are close to each other is all dug there is the mouth of blowing, two the mouth of blowing is located one side that two rubber mounting (22) were kept away from each other respectively.
4. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the inner side wall of the diamond cutter body (4) is fixedly connected with a conical cooling cylinder (26), the interior of the conical cooling cylinder (26) is filled with cooling liquid, a plurality of floating balls (28) are arranged in the conical cooling cylinder (26), the floating ball (28) is positioned on the cooling liquid level, the floating ball (28) is filled with heat absorption particles, the outer end of the floating ball (28) is coated with a heat conducting coating, a liquid permeable membrane (27) is fixedly connected between the inner side walls of the conical cooling cylinder (26), two rebound plates (29) which are bilaterally symmetrical are arranged in the conical cooling cylinder (26), two telescopic rods (30) are fixedly connected between one end, far away from each other, of each rebound plate (29) and the inner side wall of the conical cooling cylinder (26), the outer end cover of telescopic link (30) is equipped with expanding spring (31), the one end fixed connection that the outer end and the rebound board (29) of expanding spring (31) are close to telescopic link (30).
5. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the inside wall fixedly connected with bilateral symmetry of diamond cutter body (4) two water conservancy diversion seats (24), two fixedly connected with extrusion valve (25) between water conservancy diversion seat (24), the initial condition of extrusion valve (25) is folded state, extrusion valve (25) are located the upside that adsorbs movable ball (10), adsorb a plurality of evenly distributed's of outer end fixedly connected with capillary fiber (16) of movable ball (10).
6. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the deformation memory spring (8) is made of a shape memory alloy material, the initial state of the deformation memory spring (8) is an extension state, the deformation memory magnetism isolating ring body (15) is made of a high-molecular shape memory material, and the initial state of the deformation memory magnetism isolating ring body (15) is a contraction state.
7. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the outer end of the piston (7) is fixedly connected with a sealing ring, and the outer end of the sealing ring is in close contact with the inner side wall of the air pumping cylinder (6).
8. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the collision small ball (19) is made of chemical fiber materials, the magnetism-insulating powder is made of Fe-Ni alloy materials, and the content of Ni is 80%.
9. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: two pairs the one end that keeps away from each other of magnetic ball (14) is the N utmost point setting, two pairs the one end that magnet piece (20) are close to each other is the S utmost point setting, appeal between magnetic ball (14) and magnet piece (20) is greater than the elasticity of torsional spring (11).
10. The laser cutting and splitting process and device for a mosfet wafer as claimed in claim 2, wherein: the pipe diameter of the connecting pipe (9) is matched with the caliber of the adsorption port (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210392172.2A CN114850693A (en) | 2022-04-14 | 2022-04-14 | Laser cutting and splitting process and device for mosfet wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210392172.2A CN114850693A (en) | 2022-04-14 | 2022-04-14 | Laser cutting and splitting process and device for mosfet wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116748703A (en) * | 2023-08-15 | 2023-09-15 | 蓝思科技股份有限公司 | Method and system for processing matte substrate |
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- 2022-04-14 CN CN202210392172.2A patent/CN114850693A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116748703A (en) * | 2023-08-15 | 2023-09-15 | 蓝思科技股份有限公司 | Method and system for processing matte substrate |
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Application publication date: 20220805 |