CN114823467A - 一种平面载盘在晶圆承载中的应用 - Google Patents

一种平面载盘在晶圆承载中的应用 Download PDF

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CN114823467A
CN114823467A CN202210344265.8A CN202210344265A CN114823467A CN 114823467 A CN114823467 A CN 114823467A CN 202210344265 A CN202210344265 A CN 202210344265A CN 114823467 A CN114823467 A CN 114823467A
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严立巍
文锺
符德荣
陈政勋
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Abstract

本发明公开一种平面载盘在晶圆承载中的应用，应用的方法具体包括以下步骤：S1、完成正面前段制程后键合玻璃载板，然后对晶圆背面进行减薄并完成晶圆背面前段制程；S2、在晶圆背面喷水膜，贴附硅载板，然后整体翻转玻璃载板、晶圆和硅载板，最后解键合移除玻璃载板；S3、烘烤使水膜挥发，在晶圆的边缘涂布SOG进行封堵，除去粘着剂，完成晶圆正面后段制程；S4、正面贴附平面载盘，整体翻转硅载板、晶圆和平面载盘，通过激光环使SOG断开，移除硅载板；S5、通过平面载盘承载晶圆完成后续晶圆制程。本发明通过硅载板及平面载盘承载晶圆，无需使用黏着剂进行键合，克服了高温制程的温度限制，同时承载物制作简单，材料成本也更低。

Description

一种平面载盘在晶圆承载中的应用
技术领域
本发明涉及晶圆加工技术领域，具体的是一种平面载盘在晶圆承载中的应用。
背景技术
在集成电路器件制造装置中，晶圆承载装置扮演一个相当重要的角色，其通常用于保持晶圆，以便对晶圆进行工艺处理或仅供暂放晶圆。若晶圆承载装置承载的晶圆相对于晶圆承载装置发生偏移，则在后续的工艺过程中会导致工艺偏差，造成良率损失；或者在采用机械手臂转移晶圆的过程中会导致晶圆相对目标位置偏移，可能会造成晶圆被撞击而破碎。
为了方便晶圆加工过程中的载取与传送，目前广泛应用的方法是使用玻璃载板作为介质，以搭载晶圆。但是采用玻璃载板承载晶圆需要利用黏着剂进行键合，而黏着剂耐高温能力差，无法满足晶圆高温制程的需要，因此，亟需一种新的晶圆承载方法，以克服高温制程晶圆无法稳定限位的问题。
发明内容
为解决上述背景技术中提到的不足，本发明的目的在于提供一种平面载盘在晶圆承载中的应用，本发明通过硅载板及平面载盘承载晶圆，无需使用黏着剂进行键合，克服了高温制程的温度限制，同时承载物制作简单，材料成本也更低。
本发明的目的可以通过以下技术方案实现：
一种平面载盘在晶圆承载中的应用，平面载盘表面开设有若干用于吸附晶圆的抽气孔，应用的方法具体包括以下步骤：
S1、于完成正面前段制程的晶圆正面通过黏着剂键合玻璃载板，然后通过研磨/蚀刻的方式对晶圆背面进行减薄，并完成晶圆背面前段制程；
S2、在晶圆背面喷涂去离子水，形成一层厚度均匀的水膜，然后在晶圆背面贴附硅载板，借助水分子之间的引力及外界的大气压力使硅载板与晶圆吸附，然后整体翻转玻璃载板、晶圆和硅载板，在晶圆边缘处的至少两个点涂布SOG进行限位，最后解键合移除玻璃载板；
S3、将硅载板与晶圆送至恒温干燥设备中烘烤，使硅载板与晶圆之间的水膜挥发，然后在晶圆的边缘利用旋转涂布介质SOG或聚酰亚胺进行封堵，然后通过有机溶剂溶解除去粘着剂，完成晶圆正面后段制程；
S4、在晶圆正面涂布聚酰亚胺使正面平坦化，然后在晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，通过激光环切硅载板和晶圆边缘使封堵层断开，解除硅载板与晶圆之间的结合，然后掀起并移除硅载板；
S5、通过平面载盘承载晶圆完成后续晶圆制程。
进一步优选地，步骤S1中正面前段制程为晶圆正面金属制程前的所有制程，包括ILD制程和接触孔开窗。
进一步优选地，步骤S1中背面前段制程包括为晶圆背面制程前的所有制程，包括离子植入。
进一步优选地，步骤S3中正面后段制程包括正面金属制程。
进一步优选地，步骤S4还可以为在晶圆正面涂布聚酰亚胺使正面平坦化后先通过激光环切硅载板和晶圆边缘使封堵层断开，再将晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，最后掀起并移除硅载板。
进一步优选地，步骤S5中后续晶圆制程包括晶圆背面金属制程、黄光制程、晶圆切割制程。
本发明的有益效果：
本发明利用水膜填充晶圆与硅载板之间，借助水分子之间的引力及外界的大气压力使硅载板与晶圆吸附，同时在晶圆边缘涂布点状封堵，限制晶圆在平面方向位移，从而在解键合玻璃载板时固定晶圆。本发明进行正面金属制程前先烘烤除去硅载板与晶圆之间的水膜，再通过SOG环形涂布形成全面封堵，保证在后续金属制程不会因水膜蒸发导致晶圆鼓包裂片。本发明在完成晶圆正面制程后通过将晶圆转移至平面载盘上，利用激光环切硅载板和晶圆边缘使SOG断开，即可解除晶圆与硅载板的结合。本发明工艺中通过硅载板及平面载盘承载晶圆，无需使用黏着剂进行键合，克服了高温制程的温度限制，同时承载物制作简单，材料成本也更低。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明实施例1步骤S1的工艺流程图；
图2是本发明实施例1步骤S2的工艺流程图；
图3是本发明实施例1步骤S3的工艺流程图；
图4是本发明实施例1步骤S4的工艺流程图；
图5是本发明实施例2步骤S4的工艺流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是“载盘”是一种用于承载晶圆的载具，其材质可以为硅、石墨、玻璃或蓝宝石等，分为凹槽型载盘(见申请人在先申请的专利，专利申请号：2021114160788)和平面型载盘，在本发明中采用的为平面型载盘，平面型载盘表面没有开设凹槽，但中间与凹槽型载盘一样开设有透气孔。
实施例1
一种平面载盘在晶圆承载中的应用，其特征在于，所述平面载盘表面开设有若干用于吸附晶圆的抽气孔，所述应用的方法具体包括以下步骤：
S1、于完成ILD制程和接触孔开窗的晶圆正面通过黏着剂键合玻璃载板，然后通过研磨/蚀刻的方式对晶圆背面进行减薄，并完成晶圆背面离子植入制程；
S2、在晶圆背面喷涂去离子水，形成一层厚度均匀的水膜，然后在晶圆背面贴附硅载板，借助水分子之间的引力及外界的大气压力使硅载板与晶圆吸附，然后整体翻转玻璃载板、晶圆和硅载板，在晶圆边缘处的至少两个点涂布SOG进行限位，最后解键合移除玻璃载板；
S3、将硅载板与晶圆送至恒温干燥设备中烘烤，使硅载板与晶圆之间的水膜挥发，然后在晶圆的边缘利用旋转涂布介质SOG进行封堵，然后通过有机溶剂溶解除去粘着剂，完成晶圆正面金属制程；
S4、在晶圆正面涂布聚酰亚胺使正面平坦化，然后在晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，通过激光环切硅载板和晶圆边缘使SOG断开，解除硅载板与晶圆之间的结合，然后掀起并移除硅载板；
S5、通过平面载盘承载晶圆完成后续晶圆制程。
实施例2
一种平面载盘在晶圆承载中的应用，其特征在于，所述平面载盘表面开设有若干用于吸附晶圆的抽气孔，所述应用的方法具体包括以下步骤：
S1、于完成ILD制程和接触孔开窗的晶圆正面通过黏着剂键合玻璃载板，然后通过研磨/蚀刻的方式对晶圆背面进行减薄，并完成晶圆背面粒子植入制程；
S2、在晶圆背面喷涂去离子水，形成一层厚度均匀的水膜，然后在晶圆背面贴附硅载板，借助水分子之间的引力及外界的大气压力使硅载板与晶圆吸附，然后整体翻转玻璃载板、晶圆和硅载板，在晶圆边缘处的至少两个点涂布SOG进行限位，最后解键合移除玻璃载板；
S3、将硅载板与晶圆送至恒温干燥设备中烘烤，使硅载板与晶圆之间的水膜挥发，然后在晶圆的边缘利用聚酰亚胺进行封堵，然后通过有机溶剂溶解除去粘着剂，完成晶圆正面金属制程；
S4、在晶圆正面涂布聚酰亚胺使正面平坦化后通过激光环切硅载板和晶圆边缘使聚酰亚胺断开，再将晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，最后掀起并移除硅载板；
S5、通过平面载盘承载晶圆完成后续晶圆制程。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。

Claims (6)

1.一种平面载盘在晶圆承载中的应用，其特征在于，所述平面载盘表面开设有若干用于吸附晶圆的抽气孔，所述应用的方法具体包括以下步骤：
S1、于完成正面前段制程的晶圆正面通过黏着剂键合玻璃载板，然后通过研磨/蚀刻的方式对晶圆背面进行减薄，并完成晶圆背面前段制程；
S2、在晶圆背面喷涂去离子水，形成一层厚度均匀的水膜，然后在晶圆背面贴附硅载板，借助水分子之间的引力及外界的大气压力使硅载板与晶圆吸附，然后整体翻转玻璃载板、晶圆和硅载板，在晶圆边缘处的至少两个点涂布SOG进行限位，最后解键合移除玻璃载板；
S3、将硅载板与晶圆送至恒温干燥设备中烘烤，使硅载板与晶圆之间的水膜挥发，然后在晶圆的边缘利用旋转涂布介质SOG或聚酰亚胺进行封堵，然后通过有机溶剂溶解除去粘着剂，完成晶圆正面后段制程；
S4、在晶圆正面涂布聚酰亚胺使正面平坦化，然后在晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，通过激光环切硅载板和晶圆边缘使封堵层断开，解除硅载板与晶圆之间的结合，然后掀起并移除硅载板；
S5、通过平面载盘承载晶圆完成后续晶圆制程。
2.根据权利要求1所述的平面载盘在晶圆承载中的应用，其特征在于，所述步骤S1中正面前段制程为晶圆正面金属制程前的所有制程，包括ILD制程和接触孔开窗。
3.根据权利要求1所述的平面载盘在晶圆承载中的应用，其特征在于，所述步骤S1中背面前段制程包括为晶圆背面制程前的所有制程，包括离子植入。
4.根据权利要求1所述的平面载盘在晶圆承载中的应用，其特征在于，所述步骤S3中正面后段制程包括正面金属制程。
5.根据权利要求1所述的平面载盘在晶圆承载中的应用，其特征在于，所述步骤S4还可以为在晶圆正面涂布聚酰亚胺使正面平坦化后先通过激光环切硅载板和晶圆边缘使封堵层断开，再将晶圆正面贴附平面载盘，通过平面载盘的抽气孔抽气使晶圆与平面载盘吸附，然后整体翻转硅载板、晶圆和平面载盘，最后掀起并移除硅载板。
6.根据权利要求1所述的平面载盘在晶圆承载中的应用，其特征在于，所述步骤S5中后续晶圆制程包括晶圆背面金属制程、黄光制程、晶圆切割制程。
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CN117219561A (zh) * 2023-11-09 2023-12-12 合肥晶合集成电路股份有限公司 降低harp工艺中晶圆滑片风险的方法

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* Cited by examiner, † Cited by third party
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CN117219561A (zh) * 2023-11-09 2023-12-12 合肥晶合集成电路股份有限公司 降低harp工艺中晶圆滑片风险的方法
CN117219561B (zh) * 2023-11-09 2024-02-09 合肥晶合集成电路股份有限公司 降低harp工艺中晶圆滑片风险的方法

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