CN114787614B - 基于叠加计量测量的倾斜计算的系统及方法 - Google Patents

基于叠加计量测量的倾斜计算的系统及方法 Download PDF

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Publication number
CN114787614B
CN114787614B CN202080078707.8A CN202080078707A CN114787614B CN 114787614 B CN114787614 B CN 114787614B CN 202080078707 A CN202080078707 A CN 202080078707A CN 114787614 B CN114787614 B CN 114787614B
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China
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metrology
tools
tilt
overlay
measurements
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Chinese (zh)
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CN114787614A (zh
Inventor
R·弗克维奇
P·麦克唐纳
A·莱维
裴金成
宋金岩
A·玛纳森
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202080078707.8A 2019-11-14 2020-11-15 基于叠加计量测量的倾斜计算的系统及方法 Active CN114787614B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962935310P 2019-11-14 2019-11-14
US62/935,310 2019-11-14
US17/087,417 2020-11-02
US17/087,417 US11360398B2 (en) 2019-11-14 2020-11-02 System and method for tilt calculation based on overlay metrology measurements
PCT/US2020/059898 WO2021096896A2 (en) 2019-11-14 2020-11-15 System and method for tilt calculation based on overlay metrology measurements

Publications (2)

Publication Number Publication Date
CN114787614A CN114787614A (zh) 2022-07-22
CN114787614B true CN114787614B (zh) 2023-05-23

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US (1) US11360398B2 (https=)
EP (1) EP4049009B1 (https=)
JP (1) JP7411799B2 (https=)
KR (1) KR102694696B1 (https=)
CN (1) CN114787614B (https=)
TW (1) TWI829977B (https=)
WO (1) WO2021096896A2 (https=)

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Publication number Priority date Publication date Assignee Title
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US12550650B2 (en) * 2021-08-16 2026-02-10 Microchip Technology Incorporated Method of forming an integrated circuit via
EP4361727A1 (en) * 2022-10-24 2024-05-01 ASML Netherlands B.V. Method of tilt metrology and associated apparatuses
US12529552B2 (en) * 2023-04-18 2026-01-20 Kla Corporation Angular averaging calibration on bare wafer metrology tools for ESFQR matching improvement

Citations (8)

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CN1499293A (zh) * 2002-11-01 2004-05-26 Asml 检验方法及器件制造方法
CN1584534A (zh) * 2003-08-20 2005-02-23 雷射科技股份有限公司 图形基板的缺陷修正方法、修正装置和图形基板制造方法
CN101371326A (zh) * 2005-12-02 2009-02-18 阿利斯公司 离子源、系统和方法
CN107092167A (zh) * 2016-02-17 2017-08-25 台湾积体电路制造股份有限公司 用于无布局套刻控制的方法及系统
CN109073996A (zh) * 2016-03-01 2018-12-21 Asml荷兰有限公司 用于确定图案化工艺的参数的方法和设备
CN109073980A (zh) * 2015-12-17 2018-12-21 Asml荷兰有限公司 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量
EP3457212A1 (en) * 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method
CN110312967A (zh) * 2017-01-25 2019-10-08 科磊股份有限公司 具有非零偏移预测的叠加控制

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Publication number Priority date Publication date Assignee Title
NL2008807A (en) * 2011-06-21 2012-12-28 Asml Netherlands Bv Inspection method and apparatus.
NL2009004A (en) * 2011-07-20 2013-01-22 Asml Netherlands Bv Inspection method and apparatus, and lithographic apparatus.
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US10324379B2 (en) * 2015-06-23 2019-06-18 Asml Netherlands B.V. Lithographic apparatus and method
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
CN110462523B (zh) * 2017-03-23 2022-02-11 Asml荷兰有限公司 结构的不对称性监视
EP3489756A1 (en) * 2017-11-23 2019-05-29 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
NL2023565A (en) * 2019-07-25 2019-08-14 Asml Netherlands Bv Method and system for determining information about a target structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1499293A (zh) * 2002-11-01 2004-05-26 Asml 检验方法及器件制造方法
CN1584534A (zh) * 2003-08-20 2005-02-23 雷射科技股份有限公司 图形基板的缺陷修正方法、修正装置和图形基板制造方法
CN101371326A (zh) * 2005-12-02 2009-02-18 阿利斯公司 离子源、系统和方法
CN109073980A (zh) * 2015-12-17 2018-12-21 Asml荷兰有限公司 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量
CN107092167A (zh) * 2016-02-17 2017-08-25 台湾积体电路制造股份有限公司 用于无布局套刻控制的方法及系统
CN109073996A (zh) * 2016-03-01 2018-12-21 Asml荷兰有限公司 用于确定图案化工艺的参数的方法和设备
CN110312967A (zh) * 2017-01-25 2019-10-08 科磊股份有限公司 具有非零偏移预测的叠加控制
EP3457212A1 (en) * 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method

Also Published As

Publication number Publication date
WO2021096896A3 (en) 2021-09-16
KR20220100641A (ko) 2022-07-15
JP7411799B2 (ja) 2024-01-11
WO2021096896A2 (en) 2021-05-20
US11360398B2 (en) 2022-06-14
TWI829977B (zh) 2024-01-21
EP4049009B1 (en) 2025-05-28
EP4049009A2 (en) 2022-08-31
KR102694696B1 (ko) 2024-08-12
TW202134798A (zh) 2021-09-16
JP2023502949A (ja) 2023-01-26
EP4049009A4 (en) 2023-12-13
CN114787614A (zh) 2022-07-22
US20210149313A1 (en) 2021-05-20

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