KR102694696B1 - 오버레이 계측 측정값에 기반한 틸트 계산을 위한 시스템 및 방법 - Google Patents

오버레이 계측 측정값에 기반한 틸트 계산을 위한 시스템 및 방법 Download PDF

Info

Publication number
KR102694696B1
KR102694696B1 KR1020227019789A KR20227019789A KR102694696B1 KR 102694696 B1 KR102694696 B1 KR 102694696B1 KR 1020227019789 A KR1020227019789 A KR 1020227019789A KR 20227019789 A KR20227019789 A KR 20227019789A KR 102694696 B1 KR102694696 B1 KR 102694696B1
Authority
KR
South Korea
Prior art keywords
metrology
overlay
tilt
tools
measurements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227019789A
Other languages
English (en)
Korean (ko)
Other versions
KR20220100641A (ko
Inventor
로이 볼코비치
파울 맥도널드
아디 레비
진쳉 페이
진얀 송
암논 마나쎈
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20220100641A publication Critical patent/KR20220100641A/ko
Application granted granted Critical
Publication of KR102694696B1 publication Critical patent/KR102694696B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020227019789A 2019-11-14 2020-11-15 오버레이 계측 측정값에 기반한 틸트 계산을 위한 시스템 및 방법 Active KR102694696B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962935310P 2019-11-14 2019-11-14
US62/935,310 2019-11-14
US17/087,417 2020-11-02
US17/087,417 US11360398B2 (en) 2019-11-14 2020-11-02 System and method for tilt calculation based on overlay metrology measurements
PCT/US2020/059898 WO2021096896A2 (en) 2019-11-14 2020-11-15 System and method for tilt calculation based on overlay metrology measurements

Publications (2)

Publication Number Publication Date
KR20220100641A KR20220100641A (ko) 2022-07-15
KR102694696B1 true KR102694696B1 (ko) 2024-08-12

Family

ID=75909418

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227019789A Active KR102694696B1 (ko) 2019-11-14 2020-11-15 오버레이 계측 측정값에 기반한 틸트 계산을 위한 시스템 및 방법

Country Status (7)

Country Link
US (1) US11360398B2 (https=)
EP (1) EP4049009B1 (https=)
JP (1) JP7411799B2 (https=)
KR (1) KR102694696B1 (https=)
CN (1) CN114787614B (https=)
TW (1) TWI829977B (https=)
WO (1) WO2021096896A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US12550650B2 (en) * 2021-08-16 2026-02-10 Microchip Technology Incorporated Method of forming an integrated circuit via
EP4361727A1 (en) * 2022-10-24 2024-05-01 ASML Netherlands B.V. Method of tilt metrology and associated apparatuses
US12529552B2 (en) * 2023-04-18 2026-01-20 Kla Corporation Angular averaging calibration on bare wafer metrology tools for ESFQR matching improvement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120330592A1 (en) * 2011-06-21 2012-12-27 Asml Netherlands B.V. Inspection Method and Apparatus
US20130162996A1 (en) * 2011-07-20 2013-06-27 Asml Netherlands B.V. Inspection Method and Apparatus, and Lithographic Apparatus
US20180173099A1 (en) 2015-06-23 2018-06-21 Asml Netherlands B.V. Lithographic Apparatus and Method
US20180253017A1 (en) 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction
US20180364591A1 (en) 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148959B2 (en) * 2002-11-01 2006-12-12 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
CN100360918C (zh) * 2003-08-20 2008-01-09 雷射科技股份有限公司 图形基板的缺陷修正方法、修正装置和图形基板制造方法
CN101366095B (zh) * 2005-12-02 2010-11-10 阿利斯公司 离子源、系统和方法
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US10061211B2 (en) * 2016-02-17 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for layoutless overlay control
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
CN110462523B (zh) * 2017-03-23 2022-02-11 Asml荷兰有限公司 结构的不对称性监视
EP3457212A1 (en) * 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method
EP3489756A1 (en) * 2017-11-23 2019-05-29 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
NL2023565A (en) * 2019-07-25 2019-08-14 Asml Netherlands Bv Method and system for determining information about a target structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120330592A1 (en) * 2011-06-21 2012-12-27 Asml Netherlands B.V. Inspection Method and Apparatus
US20130162996A1 (en) * 2011-07-20 2013-06-27 Asml Netherlands B.V. Inspection Method and Apparatus, and Lithographic Apparatus
US20180173099A1 (en) 2015-06-23 2018-06-21 Asml Netherlands B.V. Lithographic Apparatus and Method
US20180364591A1 (en) 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
US20180253017A1 (en) 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction

Also Published As

Publication number Publication date
WO2021096896A3 (en) 2021-09-16
KR20220100641A (ko) 2022-07-15
JP7411799B2 (ja) 2024-01-11
WO2021096896A2 (en) 2021-05-20
US11360398B2 (en) 2022-06-14
TWI829977B (zh) 2024-01-21
EP4049009B1 (en) 2025-05-28
CN114787614B (zh) 2023-05-23
EP4049009A2 (en) 2022-08-31
TW202134798A (zh) 2021-09-16
JP2023502949A (ja) 2023-01-26
EP4049009A4 (en) 2023-12-13
CN114787614A (zh) 2022-07-22
US20210149313A1 (en) 2021-05-20

Similar Documents

Publication Publication Date Title
KR102694696B1 (ko) 오버레이 계측 측정값에 기반한 틸트 계산을 위한 시스템 및 방법
CN110312967B (zh) 具有非零偏移预测的叠加控制
TWI821586B (zh) 用於在計量量測中減少錯誤之系統及方法
US9594310B2 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US11429029B2 (en) Method and apparatus for illumination adjustment
US11333982B2 (en) Scaling metric for quantifying metrology sensitivity to process variation
TW201841075A (zh) 隨機察覺度量衡及製造
WO2021055407A1 (en) System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
US9304077B2 (en) Inspection apparatus and method
TWI761414B (zh) 基於超出規格點之減少之用於對準量測的取樣圖之判定
KR102821159B1 (ko) 측정 레시피를 결정하기 위한 방법 및 연관된 장치들
US20200081340A1 (en) Metrology Apparatus and Method for Determining a Characteristic of One or More Structures on a Substrate

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20220610

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240110

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240521

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240808

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240808

End annual number: 3

Start annual number: 1

PG1601 Publication of registration