TWI829977B - 基於疊對計量量測之傾斜計算的系統及方法 - Google Patents

基於疊對計量量測之傾斜計算的系統及方法 Download PDF

Info

Publication number
TWI829977B
TWI829977B TW109139671A TW109139671A TWI829977B TW I829977 B TWI829977 B TW I829977B TW 109139671 A TW109139671 A TW 109139671A TW 109139671 A TW109139671 A TW 109139671A TW I829977 B TWI829977 B TW I829977B
Authority
TW
Taiwan
Prior art keywords
metrology
tools
overlay
tilt
measurements
Prior art date
Application number
TW109139671A
Other languages
English (en)
Chinese (zh)
Other versions
TW202134798A (zh
Inventor
羅伊 弗克維奇
保羅 麥當勞
艾迪 賴威
裴金成
宋金岩
阿農 馬那森
Original Assignee
美商科磊股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商科磊股份有限公司 filed Critical 美商科磊股份有限公司
Publication of TW202134798A publication Critical patent/TW202134798A/zh
Application granted granted Critical
Publication of TWI829977B publication Critical patent/TWI829977B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109139671A 2019-11-14 2020-11-13 基於疊對計量量測之傾斜計算的系統及方法 TWI829977B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962935310P 2019-11-14 2019-11-14
US62/935,310 2019-11-14
US17/087,417 2020-11-02
US17/087,417 US11360398B2 (en) 2019-11-14 2020-11-02 System and method for tilt calculation based on overlay metrology measurements

Publications (2)

Publication Number Publication Date
TW202134798A TW202134798A (zh) 2021-09-16
TWI829977B true TWI829977B (zh) 2024-01-21

Family

ID=75909418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109139671A TWI829977B (zh) 2019-11-14 2020-11-13 基於疊對計量量測之傾斜計算的系統及方法

Country Status (7)

Country Link
US (1) US11360398B2 (https=)
EP (1) EP4049009B1 (https=)
JP (1) JP7411799B2 (https=)
KR (1) KR102694696B1 (https=)
CN (1) CN114787614B (https=)
TW (1) TWI829977B (https=)
WO (1) WO2021096896A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US12550650B2 (en) * 2021-08-16 2026-02-10 Microchip Technology Incorporated Method of forming an integrated circuit via
EP4361727A1 (en) * 2022-10-24 2024-05-01 ASML Netherlands B.V. Method of tilt metrology and associated apparatuses
US12529552B2 (en) * 2023-04-18 2026-01-20 Kla Corporation Angular averaging calibration on bare wafer metrology tools for ESFQR matching improvement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180253017A1 (en) * 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction
US20180364591A1 (en) * 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
TW201925910A (zh) * 2017-11-23 2019-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於判定圖案化製程參數的方法及裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148959B2 (en) * 2002-11-01 2006-12-12 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
CN100360918C (zh) * 2003-08-20 2008-01-09 雷射科技股份有限公司 图形基板的缺陷修正方法、修正装置和图形基板制造方法
CN101366095B (zh) * 2005-12-02 2010-11-10 阿利斯公司 离子源、系统和方法
NL2008807A (en) * 2011-06-21 2012-12-28 Asml Netherlands Bv Inspection method and apparatus.
NL2009004A (en) * 2011-07-20 2013-01-22 Asml Netherlands Bv Inspection method and apparatus, and lithographic apparatus.
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US10324379B2 (en) * 2015-06-23 2019-06-18 Asml Netherlands B.V. Lithographic apparatus and method
US10061211B2 (en) * 2016-02-17 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for layoutless overlay control
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
CN110462523B (zh) * 2017-03-23 2022-02-11 Asml荷兰有限公司 结构的不对称性监视
EP3457212A1 (en) * 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method
NL2023565A (en) * 2019-07-25 2019-08-14 Asml Netherlands Bv Method and system for determining information about a target structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180364591A1 (en) * 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
US20180253017A1 (en) * 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction
TW201925910A (zh) * 2017-11-23 2019-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於判定圖案化製程參數的方法及裝置

Also Published As

Publication number Publication date
WO2021096896A3 (en) 2021-09-16
KR20220100641A (ko) 2022-07-15
JP7411799B2 (ja) 2024-01-11
WO2021096896A2 (en) 2021-05-20
US11360398B2 (en) 2022-06-14
EP4049009B1 (en) 2025-05-28
CN114787614B (zh) 2023-05-23
EP4049009A2 (en) 2022-08-31
KR102694696B1 (ko) 2024-08-12
TW202134798A (zh) 2021-09-16
JP2023502949A (ja) 2023-01-26
EP4049009A4 (en) 2023-12-13
CN114787614A (zh) 2022-07-22
US20210149313A1 (en) 2021-05-20

Similar Documents

Publication Publication Date Title
TWI821586B (zh) 用於在計量量測中減少錯誤之系統及方法
TWI829977B (zh) 基於疊對計量量測之傾斜計算的系統及方法
JP6758309B2 (ja) フォーカスエラー感応性が減少した光学的計測
CN104220932B (zh) 检查设备和方法
CN110312967B (zh) 具有非零偏移预测的叠加控制
CN109632819B (zh) 用于测量半导体参数的设备、技术和目标设计
CN108463877B (zh) 用于扩展的红外线光谱椭偏测量的系统及方法
JP6723269B2 (ja) 焦点感応オーバーレイターゲットを使用する焦点決定のためのシステムおよび方法
CN107851589B (zh) 在激光暗场系统中用于斑点抑制的方法及装置
US9879977B2 (en) Apparatus and method for optical metrology with optimized system parameters
US11333982B2 (en) Scaling metric for quantifying metrology sensitivity to process variation
TW201702588A (zh) 在度量衡系統中度量衡資料之前向饋送
CN108603830B (zh) 具有改进的光斑大小能力的单波长椭圆偏振测量法
TW201918806A (zh) 基於影像之疊對量測及使用全焦點成像之監測
US11150563B2 (en) Method of measuring a parameter of a patterning process, metrology apparatus, target
TW201841064A (zh) 用於焦點敏感式量測目標之系統及方法
WO2021055407A1 (en) System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
TWI899213B (zh) 污染識別度量衡系統、微影設備及其方法