JP7411799B2 - オーバレイ計量計測に基づく傾斜計算システム及び方法 - Google Patents
オーバレイ計量計測に基づく傾斜計算システム及び方法 Download PDFInfo
- Publication number
- JP7411799B2 JP7411799B2 JP2022528149A JP2022528149A JP7411799B2 JP 7411799 B2 JP7411799 B2 JP 7411799B2 JP 2022528149 A JP2022528149 A JP 2022528149A JP 2022528149 A JP2022528149 A JP 2022528149A JP 7411799 B2 JP7411799 B2 JP 7411799B2
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- JP
- Japan
- Prior art keywords
- metrology
- overlay
- tools
- collectables
- measurements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962935310P | 2019-11-14 | 2019-11-14 | |
| US62/935,310 | 2019-11-14 | ||
| US17/087,417 | 2020-11-02 | ||
| US17/087,417 US11360398B2 (en) | 2019-11-14 | 2020-11-02 | System and method for tilt calculation based on overlay metrology measurements |
| PCT/US2020/059898 WO2021096896A2 (en) | 2019-11-14 | 2020-11-15 | System and method for tilt calculation based on overlay metrology measurements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023502949A JP2023502949A (ja) | 2023-01-26 |
| JP2023502949A5 JP2023502949A5 (https=) | 2023-09-06 |
| JP7411799B2 true JP7411799B2 (ja) | 2024-01-11 |
Family
ID=75909418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022528149A Active JP7411799B2 (ja) | 2019-11-14 | 2020-11-15 | オーバレイ計量計測に基づく傾斜計算システム及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11360398B2 (https=) |
| EP (1) | EP4049009B1 (https=) |
| JP (1) | JP7411799B2 (https=) |
| KR (1) | KR102694696B1 (https=) |
| CN (1) | CN114787614B (https=) |
| TW (1) | TWI829977B (https=) |
| WO (1) | WO2021096896A2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11353799B1 (en) * | 2019-07-23 | 2022-06-07 | Kla Corporation | System and method for error reduction for metrology measurements |
| US12550650B2 (en) * | 2021-08-16 | 2026-02-10 | Microchip Technology Incorporated | Method of forming an integrated circuit via |
| EP4361727A1 (en) * | 2022-10-24 | 2024-05-01 | ASML Netherlands B.V. | Method of tilt metrology and associated apparatuses |
| US12529552B2 (en) * | 2023-04-18 | 2026-01-20 | Kla Corporation | Angular averaging calibration on bare wafer metrology tools for ESFQR matching improvement |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170235233A1 (en) | 2016-02-17 | 2017-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for layoutless overlay control |
| US20180173099A1 (en) | 2015-06-23 | 2018-06-21 | Asml Netherlands B.V. | Lithographic Apparatus and Method |
| US20180253017A1 (en) | 2017-01-25 | 2018-09-06 | Kla-Tencor Corporation | Overlay Control with Non-Zero Offset Prediction |
| US20180364591A1 (en) | 2015-12-17 | 2018-12-20 | Asml Netherlands B.V. | Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured |
| EP3457212A1 (en) | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Method of controlling a patterning process, device manufacturing method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148959B2 (en) * | 2002-11-01 | 2006-12-12 | Asml Netherlands B.V. | Test pattern, inspection method, and device manufacturing method |
| CN100360918C (zh) * | 2003-08-20 | 2008-01-09 | 雷射科技股份有限公司 | 图形基板的缺陷修正方法、修正装置和图形基板制造方法 |
| CN101366095B (zh) * | 2005-12-02 | 2010-11-10 | 阿利斯公司 | 离子源、系统和方法 |
| NL2008807A (en) * | 2011-06-21 | 2012-12-28 | Asml Netherlands Bv | Inspection method and apparatus. |
| NL2009004A (en) * | 2011-07-20 | 2013-01-22 | Asml Netherlands Bv | Inspection method and apparatus, and lithographic apparatus. |
| NL2010717A (en) * | 2012-05-21 | 2013-11-25 | Asml Netherlands Bv | Determining a structural parameter and correcting an asymmetry property. |
| US10615084B2 (en) * | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
| JP6640057B2 (ja) * | 2016-09-14 | 2020-02-05 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法 |
| CN110462523B (zh) * | 2017-03-23 | 2022-02-11 | Asml荷兰有限公司 | 结构的不对称性监视 |
| EP3489756A1 (en) * | 2017-11-23 | 2019-05-29 | ASML Netherlands B.V. | Method and apparatus to determine a patterning process parameter |
| NL2023565A (en) * | 2019-07-25 | 2019-08-14 | Asml Netherlands Bv | Method and system for determining information about a target structure |
-
2020
- 2020-11-02 US US17/087,417 patent/US11360398B2/en active Active
- 2020-11-13 TW TW109139671A patent/TWI829977B/zh active
- 2020-11-15 WO PCT/US2020/059898 patent/WO2021096896A2/en not_active Ceased
- 2020-11-15 KR KR1020227019789A patent/KR102694696B1/ko active Active
- 2020-11-15 JP JP2022528149A patent/JP7411799B2/ja active Active
- 2020-11-15 CN CN202080078707.8A patent/CN114787614B/zh active Active
- 2020-11-15 EP EP20886785.3A patent/EP4049009B1/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180173099A1 (en) | 2015-06-23 | 2018-06-21 | Asml Netherlands B.V. | Lithographic Apparatus and Method |
| JP2018523152A (ja) | 2015-06-23 | 2018-08-16 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び方法 |
| US20180364591A1 (en) | 2015-12-17 | 2018-12-20 | Asml Netherlands B.V. | Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured |
| US20170235233A1 (en) | 2016-02-17 | 2017-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for layoutless overlay control |
| US20180253017A1 (en) | 2017-01-25 | 2018-09-06 | Kla-Tencor Corporation | Overlay Control with Non-Zero Offset Prediction |
| EP3457212A1 (en) | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Method of controlling a patterning process, device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021096896A3 (en) | 2021-09-16 |
| KR20220100641A (ko) | 2022-07-15 |
| WO2021096896A2 (en) | 2021-05-20 |
| US11360398B2 (en) | 2022-06-14 |
| TWI829977B (zh) | 2024-01-21 |
| EP4049009B1 (en) | 2025-05-28 |
| CN114787614B (zh) | 2023-05-23 |
| EP4049009A2 (en) | 2022-08-31 |
| KR102694696B1 (ko) | 2024-08-12 |
| TW202134798A (zh) | 2021-09-16 |
| JP2023502949A (ja) | 2023-01-26 |
| EP4049009A4 (en) | 2023-12-13 |
| CN114787614A (zh) | 2022-07-22 |
| US20210149313A1 (en) | 2021-05-20 |
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