JP7411799B2 - オーバレイ計量計測に基づく傾斜計算システム及び方法 - Google Patents

オーバレイ計量計測に基づく傾斜計算システム及び方法 Download PDF

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JP7411799B2
JP7411799B2 JP2022528149A JP2022528149A JP7411799B2 JP 7411799 B2 JP7411799 B2 JP 7411799B2 JP 2022528149 A JP2022528149 A JP 2022528149A JP 2022528149 A JP2022528149 A JP 2022528149A JP 7411799 B2 JP7411799 B2 JP 7411799B2
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metrology
overlay
tools
collectables
measurements
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Japanese (ja)
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JP2023502949A5 (https=
JP2023502949A (ja
Inventor
ロイエ ボルコビッチ
ポール マクドナルド
アディ レビイ
ジンチェン ペイ
ジンヤン ソング
アムノン マナッセン
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KLA Corp
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KLA Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022528149A 2019-11-14 2020-11-15 オーバレイ計量計測に基づく傾斜計算システム及び方法 Active JP7411799B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962935310P 2019-11-14 2019-11-14
US62/935,310 2019-11-14
US17/087,417 2020-11-02
US17/087,417 US11360398B2 (en) 2019-11-14 2020-11-02 System and method for tilt calculation based on overlay metrology measurements
PCT/US2020/059898 WO2021096896A2 (en) 2019-11-14 2020-11-15 System and method for tilt calculation based on overlay metrology measurements

Publications (3)

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JP2023502949A JP2023502949A (ja) 2023-01-26
JP2023502949A5 JP2023502949A5 (https=) 2023-09-06
JP7411799B2 true JP7411799B2 (ja) 2024-01-11

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JP2022528149A Active JP7411799B2 (ja) 2019-11-14 2020-11-15 オーバレイ計量計測に基づく傾斜計算システム及び方法

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US (1) US11360398B2 (https=)
EP (1) EP4049009B1 (https=)
JP (1) JP7411799B2 (https=)
KR (1) KR102694696B1 (https=)
CN (1) CN114787614B (https=)
TW (1) TWI829977B (https=)
WO (1) WO2021096896A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US12550650B2 (en) * 2021-08-16 2026-02-10 Microchip Technology Incorporated Method of forming an integrated circuit via
EP4361727A1 (en) * 2022-10-24 2024-05-01 ASML Netherlands B.V. Method of tilt metrology and associated apparatuses
US12529552B2 (en) * 2023-04-18 2026-01-20 Kla Corporation Angular averaging calibration on bare wafer metrology tools for ESFQR matching improvement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170235233A1 (en) 2016-02-17 2017-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for layoutless overlay control
US20180173099A1 (en) 2015-06-23 2018-06-21 Asml Netherlands B.V. Lithographic Apparatus and Method
US20180253017A1 (en) 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction
US20180364591A1 (en) 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
EP3457212A1 (en) 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method

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Publication number Priority date Publication date Assignee Title
US7148959B2 (en) * 2002-11-01 2006-12-12 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
CN100360918C (zh) * 2003-08-20 2008-01-09 雷射科技股份有限公司 图形基板的缺陷修正方法、修正装置和图形基板制造方法
CN101366095B (zh) * 2005-12-02 2010-11-10 阿利斯公司 离子源、系统和方法
NL2008807A (en) * 2011-06-21 2012-12-28 Asml Netherlands Bv Inspection method and apparatus.
NL2009004A (en) * 2011-07-20 2013-01-22 Asml Netherlands Bv Inspection method and apparatus, and lithographic apparatus.
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
CN110462523B (zh) * 2017-03-23 2022-02-11 Asml荷兰有限公司 结构的不对称性监视
EP3489756A1 (en) * 2017-11-23 2019-05-29 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
NL2023565A (en) * 2019-07-25 2019-08-14 Asml Netherlands Bv Method and system for determining information about a target structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180173099A1 (en) 2015-06-23 2018-06-21 Asml Netherlands B.V. Lithographic Apparatus and Method
JP2018523152A (ja) 2015-06-23 2018-08-16 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び方法
US20180364591A1 (en) 2015-12-17 2018-12-20 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
US20170235233A1 (en) 2016-02-17 2017-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for layoutless overlay control
US20180253017A1 (en) 2017-01-25 2018-09-06 Kla-Tencor Corporation Overlay Control with Non-Zero Offset Prediction
EP3457212A1 (en) 2017-09-18 2019-03-20 ASML Netherlands B.V. Method of controlling a patterning process, device manufacturing method

Also Published As

Publication number Publication date
WO2021096896A3 (en) 2021-09-16
KR20220100641A (ko) 2022-07-15
WO2021096896A2 (en) 2021-05-20
US11360398B2 (en) 2022-06-14
TWI829977B (zh) 2024-01-21
EP4049009B1 (en) 2025-05-28
CN114787614B (zh) 2023-05-23
EP4049009A2 (en) 2022-08-31
KR102694696B1 (ko) 2024-08-12
TW202134798A (zh) 2021-09-16
JP2023502949A (ja) 2023-01-26
EP4049009A4 (en) 2023-12-13
CN114787614A (zh) 2022-07-22
US20210149313A1 (en) 2021-05-20

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