CN114747204B - 光检测器、固体摄像装置及距离测定装置 - Google Patents

光检测器、固体摄像装置及距离测定装置 Download PDF

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Publication number
CN114747204B
CN114747204B CN202080081503.XA CN202080081503A CN114747204B CN 114747204 B CN114747204 B CN 114747204B CN 202080081503 A CN202080081503 A CN 202080081503A CN 114747204 B CN114747204 B CN 114747204B
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China
Prior art keywords
transistor
source
pixels
avalanche photodiode
reset
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CN202080081503.XA
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Chinese (zh)
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CN114747204A (zh
Inventor
石井基范
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080081503.XA 2019-11-29 2020-11-06 光检测器、固体摄像装置及距离测定装置 Active CN114747204B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019217324 2019-11-29
JP2019-217324 2019-11-29
PCT/JP2020/041462 WO2021106521A1 (ja) 2019-11-29 2020-11-06 光検出器、固体撮像装置、及び、距離測定装置

Publications (2)

Publication Number Publication Date
CN114747204A CN114747204A (zh) 2022-07-12
CN114747204B true CN114747204B (zh) 2025-06-27

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Country Link
US (1) US12310128B2 (https=)
JP (1) JP7281718B2 (https=)
CN (1) CN114747204B (https=)
WO (1) WO2021106521A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118160320A (zh) * 2021-11-02 2024-06-07 松下知识产权经营株式会社 成像元件及测距装置
JP7686683B2 (ja) * 2023-02-10 2025-06-02 キヤノン株式会社 撮像装置、撮像装置の制御方法およびプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000350103A (ja) * 1999-06-02 2000-12-15 Canon Inc 光電変換装置
JP2004363437A (ja) * 2003-06-06 2004-12-24 Sharp Corp 増幅型固体撮像装置

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US7897906B2 (en) * 2007-03-23 2011-03-01 Excelitas Canada Inc. Double quench circuit for an avalanche current device
US9985163B2 (en) * 2016-04-13 2018-05-29 Stmicroelectronics (Research & Development) Limited Single photon avalanche diode having pulse shaping filter
US10002986B1 (en) * 2016-12-19 2018-06-19 Waymo Llc Hybrid integration of photodetector array with digital front end
JP6799690B2 (ja) * 2017-01-25 2020-12-16 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 変調感度を有するｓｐａｄ検出器
JP6643270B2 (ja) 2017-03-31 2020-02-12 株式会社デンソー 光検出器
WO2018216400A1 (ja) * 2017-05-25 2018-11-29 パナソニックＩｐマネジメント株式会社 固体撮像素子、及び撮像装置
JP2019075394A (ja) 2017-10-12 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、電子装置
JP7149784B2 (ja) * 2017-12-20 2022-10-07 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
US20190281238A1 (en) * 2018-03-09 2019-09-12 Caeleste Cvba Double source follower hdr pixel
US10715756B1 (en) * 2019-01-28 2020-07-14 Pixart Imaging Inc. Image sensor employing avalanche diode
US11108980B2 (en) * 2019-02-04 2021-08-31 Semiconductor Components Industries, Llc Semiconductor devices with single-photon avalanche diode pixels

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000350103A (ja) * 1999-06-02 2000-12-15 Canon Inc 光電変換装置
JP2004363437A (ja) * 2003-06-06 2004-12-24 Sharp Corp 増幅型固体撮像装置

Also Published As

Publication number Publication date
US12310128B2 (en) 2025-05-20
US20220285420A1 (en) 2022-09-08
JP7281718B2 (ja) 2023-05-26
WO2021106521A1 (ja) 2021-06-03
CN114747204A (zh) 2022-07-12
JPWO2021106521A1 (https=) 2021-06-03

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