CN114745841A - 电路板 - Google Patents
电路板 Download PDFInfo
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- CN114745841A CN114745841A CN202111589661.9A CN202111589661A CN114745841A CN 114745841 A CN114745841 A CN 114745841A CN 202111589661 A CN202111589661 A CN 202111589661A CN 114745841 A CN114745841 A CN 114745841A
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 197
- 239000011521 glass Substances 0.000 claims description 37
- 239000002335 surface treatment layer Substances 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 11
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 23
- 239000010936 titanium Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- -1 for example Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Natural products O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002334 Spandex Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004759 spandex Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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Abstract
Description
技术领域
本发明涉及一种电路板。特别地,本发明涉及一种这样的电路板,其能够在金属电极层形成在玻璃基板层上时增加电极层与玻璃基板层之间的附着力,并且能够在玻璃基板层以大尺寸形成时阻止玻璃基板层在边缘或顶点区域的提升或翘曲。
背景技术
使用玻璃作为基底层的玻璃电路板广泛应用于昂贵的产品,如LCD面板、有机发光二极管(OLED)面板等。
玻璃电路板包括玻璃基板层、形成在玻璃基板层上的金属电极层等。然而,玻璃电路板存在的问题在于,由于玻璃材料的特性,形成在玻璃基板层上的金属电极层不能牢固地附着于玻璃基板层。
韩国专利申请公开号10-2019-0003025使用光敏玻璃工艺将电极构造为贯穿电极,即上电极和下电极,从而防止玻璃基板层的热变形并增加电极的附着力。韩国专利申请公开号10-2019-0003025还提出了一种先形成籽晶层,然后在其上形成电极层的方法,以增加电极的附着力。这里,籽晶层由钛/铜的多层膜组成。
然而,在韩国专利申请公开号10-2019-0003025中,贯穿电极可能会损坏玻璃基板层,因为需要加热玻璃基板层或对玻璃基板层施加物理力。另外形成籽晶层的方法是可以设想的构造;然而,如果钛/铜的多层膜形成为籽晶层,则可以在一定程度上减轻玻璃基板层的提升或弯曲,但在增加附着力方面存在限制。
发明内容
[技术问题]
本发明是为了解决现有技术的问题,并且本发明的目的是防止玻璃基板层的提升或翘曲。
本发明的另一个目的是当金属电极层形成在玻璃基板层上时,将金属电极层与玻璃基板层之间的附着力提高到期望的水平。
[技术方案]
用于实现此目的的本发明的电路板可被构造为包括基底层、籽晶层、第一电极层等。
籽晶层可以形成在基底层上。
第一电极层可以形成在籽晶层上。
在本发明的电路板中,基底层可以由玻璃制成。
在本发明的电路板中,籽晶层可以由金属氧化物制成。
在本发明的电路板中,籽晶层可以由IZO制成。
本发明的电路板可以包括绝缘层、第二电极层、导通孔、钝化层、表面处理层等。
绝缘层可以形成在第一电极层上。
第二电极层可以形成在绝缘层上。
导通孔可穿透绝缘层以将第一电极层和第二电极层连接。
钝化层可以形成在第二电极层、绝缘层和导通孔上,同时使第二电极层的一部分敞开。
表面处理层可以形成在第二电极层的敞开表面上。
在本发明的电路板中,第二电极层的其上形成有表面处理层的敞开表面可以用作LED接合焊盘,LED被安装在该LED接合焊盘上。
在本发明的电路板中,第二电极层可以包括共用地连接至LED接合焊盘的公共线和单独地连接至LED接合焊盘的单独线。
在本发明的电路板中,第一电极层或第二电极层可包括未连接至LED接合焊盘的虚拟线。
[有益效果]
附图说明
图1是示出根据本发明的电路板的结构的横截面图。
具体实施方式
[最佳方式]
以下,参照附图更详细地描述本发明。
图1是示出根据本发明的电路板的结构的横截面图。
如图1所示,本发明的电路板可包括基底层110、籽晶层120、第一电极层130、绝缘层140、第二电极层150、导通孔160、表面处理层170、钝化层180等。
基底层110是电路板的基板,并且可以由玻璃材料制成。基底层110的尺寸可以为1100mm×1250mm。基底层110的厚度可以在0.4mm至0.7mm的范围内。
籽晶层120可以形成在基底层110上。第一电极层130形成在籽晶层120上,使得第一电极层130可以牢固地联接至基底层110。籽晶层120可以具有与第一电极层130相同的图案。
籽晶层120可由金属氧化物制成。作为金属氧化物,例如可以使用氧化铟锌(IZO)、氧化铟锡(ITO)、氧化铝锌(AZO)、氧化锌(ZnOx)、氧化钛(TiO2)、氧化铝(Al2O3)等。
下表1示出了在现有技术(使用钛作为籽晶层)和实施例(使用IZO作为籽晶层)中改变籽晶层120的厚度时对玻璃基板层110的玻璃翘曲的测量。这里,通过在玻璃基板层110的顶点区域中测量玻璃基板层110的提升高度来测量玻璃基板层110的翘曲。如果未发生翘曲,则标记为×。
[表1]
参照上面的表1,在现有技术(Ti)和实施例(IZO)中,玻璃基板层110中未出现玻璃翘曲,直到籽晶层的厚度达到然而,当籽晶层120的厚度超过时,提升高度的增加在实施例(IZO)中显示出比在现有技术(Ti)中稍好的结果。
下表2示出了在现有技术(使用钛作为籽晶层)和实施例(使用IZO作为籽晶层)中改变籽晶层120的厚度时对附着力的测量。在此,通过划格测试测量附着力。在划格测试中,以网格形式切割后,使用刷子(鞋刷等)对角摩擦5次,并在测试表面贴上胶带,然后剥离。此时,如果没有掉落的网格单元,则表示为5B;如果有小于或等于5%的掉落的网格单元,则表示为4B;如果有大于5%且小于或等于15%的掉落的网格单元,则表示为3B;如果有大于15%且小于或等于35%的掉落的网格单元,则表示为2B;如果有大于35%且小于或等于65%的掉落的网格单元,则表示为1B。
[表2]
参照上面的表2,在现有技术(Ti)中,仅当籽晶层120的厚度达到时,附着力达到5B。然而,在实施例(IZO)的情况下,对于或更厚的籽晶层120的厚度,附着力达到5B。如上所述,可以看出,在实施例(IZO)中,即使籽晶层120的厚度很薄,附着力也相当好。
将以上表1和表2的结果结合,在玻璃基板层110的玻璃翘曲方面,现有技术(Ti)和实施例(IZO)之间没有显著差异,但在附着力方面,实施例(IZO)显示出显著优于现有技术(Ti)的结果。然而,为了具有应用实施例(IZO)的技术意义,需要在玻璃基板层110的玻璃翘曲和附着力两方面都显示良好的结果。因此,当将IZO用作本发明中的籽晶层时,可优选将其厚度限制为至
除了上述实验之外,对使用ITO的籽晶层120进行了相同的实验,ITO也产生了与IZO类似的结果。因此,使用金属氧化物作为籽晶层120具有技术意义。
籽晶层120可以通过形成电路图案的方法来形成,例如可以使用光学处理、溅射处理等。
在光学处理中,在基底层110上形成金属氧化物,在金属氧化物上形成抗蚀剂层,以及可以执行诸如抗蚀剂层的曝光、显影、蚀刻和剥离的处理。
在溅射处理中,可在惰性气氛中使用金属氧化物靶来执行溅射。
第一电极层130可以形成在籽晶层120上。第一电极层130可通过图案化导电金属来形成。作为导电金属,例如,可以使用银(Ag)、铜(Cu)、金(Au)、铝(Al)、铂(Pt)、钯(Pd)、铬(Cr)、钨(W)、钛(Ti)、钽(Ta)、铁(Fe)、钴(Co)、镍(Ni)、锌(Zn)、碲(Te)、钒(V)、铌(Nb)、钼(Mo)等。
第一电极层130可被构造为网状图案以消除可见性。
第一电极层130是导电电路层,并且可用于供电、信号传输等。
第一电极层130可以竖向连接至将在稍后描述的第二电极层150,并且用作共用地连接至多个部件的公共线或用作单独地连接至一个部件的单独线。第一电极层130的一部分可以是未连接至电源等的虚拟线。
第一电极层130可以通过利用形成电路图案的方法(例如,光学处理、溅射处理、电镀处理等)来形成。
在光学处理中,在基底层110上形成金属,随后形成抗蚀剂层,以及可以执行诸如抗蚀剂层的曝光、显影、蚀刻和剥离的处理。
溅射处理可在惰性气氛(如氩气)中使用导电金属靶来执行。
可以利用籽晶层120以用于执行电镀的电解或化学镀方式执行电镀处理。
绝缘层140可以形成在第一电极层130上。
绝缘层140使第一电极层130和第二电极层150隔绝,并且可以由绝缘材料制成,绝缘材料例如为热固性有机材料或光固化有机材料,例如环氧化合物、丙烯酸化合物、或黑色素化合物。
第二电极层150可以形成在绝缘层140上。
第二电极层150可通过图案化导电金属来形成。作为导电金属,可以使用与第一电极层130的材料相同的材料,例如,银(Ag)、铜(Cu)、金(Au)、铝(Al)、铂(Pt)、钯(Pd)、铬(Cr)、钨(W)、钛(Ti)、钽(Ta)、铁(Fe)、钴(Co)、镍(Ni)、锌(Zn)、碲(Te)、钒(V)、铌(Nb)、钼(Mo)等。
与第一电极层130类似,第二电极层150可被构造为网状图案以消除可见性。
与上述第一电极层130类似,第二电极层150是导电电路层,并且可用于供电、信号传输等。
第二电极层150可以竖向连接至第一电极层130,并且用作共用地连接至多个部件的公共线或用作单独地连接至一个部件的单独线。第二电极层150的一部分可以是未连接至电源等的虚拟线。
如图1所示,第二电极层150的一部分未被稍后描述的钝化层180盖住,而是向外敞开(尽管敞开部分的上表面将被稍后描述的表面处理层170覆盖,这里描述的是关于第二电极层150形成开口),并且诸如发光二极管的各种安装部件(未示出)可以联接至开口区域。因此,第二电极层150的开口区域可以用作接合焊盘。这里,可以设置多个接合焊盘。
公共线或单独线可连接至第二电极层150的接合焊盘。公共线可以共用地连接至多个接合焊盘,并且单独线可以分别地连接至多个接合焊盘。例如,可以提供公共线作为电路板的阴极线,并且可以提供单独线作为电路板的阳极线。通过该构造,可以单独控制联接至接合焊盘的发光二极管(LED)。
第二电极层150可以通过利用形成电路图案的方法(例如,上述光学处理、溅射处理、电镀处理等)来形成。
电镀处理可以以电解或化学镀方式执行。
导通孔160可以穿过绝缘层140以将第一电极层130和第二电极层150连接,或者将第一电极层130连接至外部连接端子。
与第一电极层130和第二电极层150一样,导通孔160可以由导电金属制成,导电金属例如为银(Ag)、铜(Cu)、金(Au)、铝(Al)、铂(Pt)、钯(Pd)、铬(Cr)、钨(W)、钛(Ti)、钽(Ta)、铁(Fe)、钴(Co)、镍(Ni)、锌(Zn)、碲(Te)、钒(V)、铌(Nb),钼(Mo)等。
导通孔160可在与第二电极层150相同的处理中形成,并且在这种情况下,第二电极层150和导通孔160可一体形成。
表面处理层170可以形成在第二电极层150的敞开表面上。
表面处理层170形成为防止第二电极层150的敞开表面被腐蚀,并且可通过在第二电极层150上溅射金(Au)、锡(Sn)、银(Ag)、镍(Ni)、铜(Cu)、有机化合物(有机保焊剂:OSP)等来形成。
表面处理层170可优选地仅形成在第二电极层150的敞开表面上。然而,如果在该过程中较容易形成在第二电极层150的整个表面上,则表面处理层170可以形成在第二电极层150的整个表面上。在这种情况下,表面处理层170的一部分可埋入钝化层180中。
钝化层180可以形成在第二电极层150、绝缘层140和导通孔160上,同时使第二电极层150部分敞开。
钝化层180隔绝并保护第二电极层150等,并且可以被构造为使连接至电路板的表面处理层170敞开。钝化层180可由一般绝缘体形成,例如,由从可固化预聚合物、可固化聚合物和塑料聚合物中选择的至少一种材料形成。
钝化层180可由可制成膜的清漆型材料形成。清漆型材料可包括多晶硅基材料(如聚二甲基硅氧烷(PDMS)、聚有机硅氧烷(POS))、聚酰亚胺基材料、或聚氨酯基材料(如氨纶)等。这些清漆型材料是柔性绝缘体,这可以增加触摸传感器的拉伸性,并增加动态折叠能力。
尽管已经示出并描述了本发明的特定实施方式,但本领域技术人员将理解,并不旨在将本发明限制于优选实施方式,并且对于本领域技术人员来说显而易见的是,在不脱离本发明的精神和范围的情况下可以进行各种改变和修改。
因此,本发明的范围将由所附权利要求及其等价物限定。
[附图标记的说明]
110:基底层 120:籽晶层
130:第一电极层 140:绝缘层
150:第二电极层 160:导通孔
170:表面处理层 180:钝化层
Claims (9)
1.一种电路板,包括:
基底层;
籽晶层,所述籽晶层形成在所述基底层上;以及
第一电极层,所述第一电极层形成在所述籽晶层上。
2.如权利要求1所述的电路板,其中,所述基底层由玻璃制成。
3.如权利要求2所述的电路板,其中,所述籽晶层由金属氧化物制成。
4.如权利要求3所述的电路板,其中,所述籽晶层由氧化铟锌(IZO)制成。
6.如权利要求1至5中任一项所述的电路板,还包括:
绝缘层,所述绝缘层形成在所述第一电极层上;
第二电极层,所述第二电极层形成在所述绝缘层上;
导通孔,所述导通孔穿透所述绝缘层以将所述第一电极层和所述第二电极层连接;
钝化层,所述钝化层形成在所述第二电极层、所述绝缘层和所述导通孔上,同时使所述第二电极层的一部分敞开;以及
表面处理层,所述表面处理层形成在所述第二电极层的敞开表面上。
7.如权利要求6所述的电路板,其中,所述第二电极层的其上形成有所述表面处理层的所述敞开表面用作LED接合焊盘,LED被安装在所述LED接合焊盘上。
8.如权利要求7所述的电路板,其中,所述第二电极层包括:
共用地连接至所述LED接合焊盘的公共线;以及
单独地连接至所述LED接合焊盘的单独线。
9.如权利要求8所述的电路板,其中,所述第一电极层或所述第二电极层包括未连接至所述LED接合焊盘的虚拟线。
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