CN114743947B - 基于to形式的功率器件封装结构及封装方法 - Google Patents
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Abstract
本发明公开了基于TO形式的功率器件封装结构及封装方法,所述封装结构包括框架、芯片、转接板、互连结构、引脚和塑封体;其中框架与芯片背面焊接连接,转接板与芯片正面焊接互连,互连结构两端分别与转接板上表面和引脚焊接互连,塑封体实现封装结构的灌封固化,本发明公开的封装结构通过改进芯片正面电极引出方式,替代了传统的引线键合工艺,利用简单的结构提高了封装结构的散热稳定性,降低寄生参数,提升了封装性能,且该封装结构无需重新设计制作塑封模具,具有普遍适用性。本发明公开的封装方法优先进行芯片与转接板的互连,在压接测试中保护芯片不被损伤,有利于封装过程的检查,剔除早期失效,确保了封装良品率。
Description
技术领域
本发明属于半导体功率器件封装技术领域,尤其涉及基于TO形式的功率器件封装结构及封装方法。
背景技术
传统的TO封装结构主要包括:铜引线框架、功率芯片、引线和塑封体,该封装结构的特点在于结构简单、外形小巧、生产周期短、成本低通用性强和可批量化生产,但这种封装结构其结构形式的改变成本较高,常见的TO封装形式包括TO-247和TO-220等。引线键合工艺是实现传统TO封装中芯片正面电极与引脚连接的关键工艺,由于该工艺操作灵活,工艺成熟,目前市面上TO封装的功率器件多采用引线键合工艺,但由于引线键合附加电阻大,寄生电感高,散热不佳,限制了其在更高性能功率器件封装中的应用。
目前也有通过金属片来实现芯片正面电极与引脚之间的互连,这种技术称为桥接焊接技术,该技术可以有效降低产品的厚度,缩小产品体积,但该结构的缺点在于芯片正面直接搭接金属片,存在降低器件绝缘性能甚至出现短路风险,也不利于封装过程中筛选测试,提升器件封装良率,且金属的CTE通常较大,与芯片CTE不匹配,容易出现热失配失效。
发明内容
有鉴于此,本发明提供一种基于TO形式的功率器件封装结构及封装方法,通过改进芯片正面电极引出结构,替代引线键合工艺,改善封装散热,降低寄生参数,提升封装性能。
为达此目的,本发明采用以下技术方案:所述结构包括:框架、芯片、转接板、互连结构、引脚和塑封体;所述转接板与芯片正面通过第一焊接层互连,所述框架与芯片背面通过第二焊接层互连,所述互连结构两端分别与转接板上表面和引脚通过第三焊接层互连,所述塑封体包覆功率器件、转接板、互连结构,露出互连结构上表面,实现双面散热。
优选的,所述第一焊接层材料为呈焊片或焊膏状的高温焊料,所述高温焊料为金锡焊料、高铅焊料和纳米银焊膏中任意一种。
优选的,所述转接板包括带通孔的转接板基材以及位于转接板基材上表面的再布线层和下表面的电极层,且转接板上下表面实现电连接。
优选的,所述转接板基材选用陶瓷材料。
优选的,所述陶瓷材料为氮化铝,所述电极层材料为铜。
优选的,互连结构为粗金属线、柔性电缆、金属片、表面敷金属层的PCB基板和表面敷金属层的DBC基板中任意一种。
优选的,所述DBC基板材料与转接板相同,基板表面敷金属层材料为铜。
基于TO形式的功率器件的封装方法,所述方法包括:
S1:将芯片正面与转接板通过高温焊料进行焊接,形成第一焊接层;
S2:对焊接后的芯片进行测试筛选;
S3:完成筛选后,将框架与芯片、转接板与互连结构、互连结构与引脚依次安装,并利用焊膏将框架与芯片、转接板与互连结构、互连结构与引脚进行一次焊接,形成位于框架与芯片之间的第二焊接层和位于互连结构与转接板以及互连结构与引脚之间的第三焊接层,所述第二焊接层和第三焊接层的焊接工艺温度低于第一焊接层的焊接工艺温度;
S4:将步骤S3中焊接连接的结构置于塑封设备中,利用塑封料进行塑封固化;
S5:塑封固化后进行切筋成型等后续工艺,完成功率器件的封装。
本发明的有益效果是:
(1)本发明公开的基于TO形式的功率器件封装结构,结构简单、便于实施、成本低、无需重新设计制作塑封模具,具有普遍适用性;
(2)本发明中通过焊接实现芯片正面电极的引出,相比于现有技术中的引线键合其引出效率和封装载流能力大幅度增加,寄生参数减小,提高封装结构的稳定性;
(3)本发明公开的基于TO形式的功率器件封装结构,通过转接板、焊料层和互连结构进行高度设计,能够实现框架与引脚之间的高度差匹配,进而实现封装器件的双面散热,增加热稳定性;
(4)本发明公开的封装结构中转接板的应用,增加了电极间的绝缘距离,使得封装绝缘强度进一步提升,同时优化了芯片电极布局,实现表面电极的再布线;
(5)本发明公开的基于TO形式的功率器件封装方法,优先进行芯片与转接板的互连,在转接板的保护下,可直接进行进行器件无损伤压接测试,有利于封装过程的检查,以及早期失效的剔除,确保了封装良品率。
附图说明
图1为本发明实施例1中基于TO形式的功率器件封装结构的结构示意图;
图2为本发明实施例1~3中转接板的结构示意图;
图3为本发明实施例1中互连结构的结构示意图;
图4为本发明实施例2中基于TO形式的功率器件封装结构的结构示意图;
图5为本发明实施例3中基于TO形式的功率器件封装结构的结构示意图;
图中:1.框架 2.第二焊接层 3.芯片 4.第一焊接层 5.转接板 6.塑封体 7.互连结构 8.引脚 9.第三焊接层 10.第一散热面 11.第二散热面 5.1.再布线层 5.2.转接板通孔填充层 5.3.转接板基材 5.4.电极层 7.1.互连结构外敷铜层 7.2.互连结构基材7.3.互连结构内敷铜层。
具体实施方式
本领域的普通技术人员将会意识到,这里所述的实施例是为了帮助读者理解本发明的原理,应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。
下面结合附图和具体实施例对本发明进行详细说明。
实施例1
如图1所示的基于TO形式的功率器件封装结构,该结构包括:框架1、芯片3、转接板5、互连结构7、引脚8和塑封体6,其中芯片3正面通过第一焊接层4与转接板5进行焊接互连,框架1位于封装结构最底部,其上表面通过第二焊接层2与芯片3的背面焊接互连,互连结构7下表面两端通过第三焊接层9分别与转接板5上表面的再布线层5.1和引脚8连接,塑封体6包覆芯片3、转接板5和互连结构7,露出互连结构7的上表面,形成形成第二散热面11,露出框架1底部,作为第一散热面10,从而实现了功率器件封装的双面散热。
作为实施例第一焊接层4的焊接材料为如金锡焊料、高铅焊料和纳米银焊膏等高温焊料,且优选呈焊片状态的高温焊料,第一焊接层4选择高温材料的优势在于不影响后续工艺,为后续的封装工艺提供温度梯度,同时增加焊接面积,实现芯片正面电极的高效引出,同时由于芯片正面存在多电极,且电极间距相对较窄(100~500μm),因此优先选用高温焊片作为第一焊接层4的焊料,可以保证焊接面积的精准控制,避免焊接短路。作为实施例第一焊接层4的焊料也可以是形状在一定程度上可控的焊膏,这种主要针对芯片面积较大的情况。
作为实施例上述转接板5包括带通孔的转接板基材5.3以及位于转接板基材5.3上表面的再布线层5.1和下表面的电极层5.4,通过转接板基材的通孔,转接板5实现上下表面的电连接,转接板基材的通孔中填充了转接板通孔填充层5.2。
作为实施例转接板基材5.3的材料优选陶瓷,如氮化铝,由于氮化铝基片的热膨胀系数与芯片3基底硅的热膨胀系数较接近,因此采用氮化铝基片作为转接板在一定程度上可以避免与芯片的热失配失效,同时鉴于陶瓷材料具有较高的绝缘强度和良好的散热性能,可增加电极间的绝缘距离,使得封装绝缘强度进一步提升,同时优化了芯片电极布局实现表面电极的再布线,转接板5表面金属化表层优选Au以方便焊接且同时防止表面氧化,保护表面电极。
本实施例中,互连结构7优选表面敷金属层的DBC基板,其优势在于,DBC基板的厚度可选择范围较广(0.25mm~1mm),选择DBC基板便于调节框架1与引脚8之间的高度差,进而实现互连结构7的部分露出形成第二散热面11,与第一散热面10配合,实现封装器件的双面散热,提高了器件的热稳定性,DBC基板材料选择与转接板相同的氮化铝,这样可以避免CTE不匹配。
互连结构7的表面敷金属层材料一般选择铜,其设计与转接板5电极结构对应,DBC基板敷铜层可实现0.1mm~0.5mm的厚度范围,具有载流能力强,散热能力强的优势,另一方面可以降低寄生参数;
实施例2
如图4所示,本实施例中,选择互连结构7为粗金属线或者柔性电缆,除互连结构7之外,其余结构均与实施例1相同。
实施例3
如图5所示,本实施例中,选择互连结构7为金属片,除互连结构7之外,其余结构与实施例1相同。
实施例4
基于TO形式的功率器件封装方法,该方法包括:
S1:将芯片正面与转接层通过高温焊料进行焊接,形成第一焊接层;
S2:对焊接后的芯片进行测试筛选;
S3:完成筛选后,将框架、芯片转接板结构、互连结构依次安装,利用焊膏进行一次焊接,形成第二、三焊接层,焊接工艺温度低于第一焊接层的焊接工艺温度;
S4:将焊接结构置于塑封设备,利用塑封料进行塑封固化。
S5:进行切筋成型等后续工艺,至封装完成。
Claims (7)
1.基于TO形式的功率器件封装结构,其特征在于,所述结构包括:框架、芯片、转接板、互连结构、引脚和塑封体;所述转接板与芯片正面通过第一焊接层互连,所述框架与芯片背面通第二焊接层互连,所述互连结构两端分别与转接板上表面和引脚通过第三焊接层互连,所述塑封体包覆功率器件、转接板、互连结构,露出互连结构上表面,实现双面散热;
所述互连结构为粗金属线、柔性电缆、金属片、表面敷金属层的PCB基板和表面敷金属层的DBC基板中任意一种。
2.根据权利要求1所述的基于TO形式的功率器件封装结构,其特征在于,所述第一焊接层材料为呈焊片或焊膏状的高温焊料,所述高温焊料为金锡焊料、高铅焊料和纳米银焊膏中任意一种。
3.根据权利要求1所述的基于TO形式的功率器件封装结构,其特征在于,所述转接板包括带通孔的转接板基材以及位于转接板基材上表面的再布线层和下表面的电极层,且转接板上下表面实现电连接。
4.根据权利要求3所述的基于TO形式的功率器件封装结构,其特征在于,所述转接板基材选用陶瓷材料。
5.根据权利要求4所述的基于TO形式的功率器件封装结构,其特征在于,所述陶瓷材料为氮化铝;所述电极层材料为铜。
6.根据权利要求1所述的基于TO形式的功率器件封装结构,其特征在于,所述DBC基板材料与转接板相同,基板表面敷金属层材料为铜。
7.如权利要求1~6中任意一项所述的基于TO形式的功率器件封装结构的封装方法,其特征在于,所述方法包括:
S1:将芯片正面与转接板通过高温焊料进行焊接,形成第一焊接层;
S2:对焊接后的芯片进行测试筛选;
S3:完成筛选后,将框架与芯片、转接板与互连结构、互连结构与引脚依次进行安装,并利用焊膏将上述安装进行一次焊接,形成位于框架与芯片之间的第二焊接层和位于互连结构与转接板以及互连结构与引脚之间的第三焊接层,所述第二焊接层和第三焊接层的焊接工艺温度低于第一焊接层的焊接工艺温度;
S4:将步骤S3中焊接连接的结构置于塑封设备中,利用塑封料进行塑封固化;
塑封固化后进行切筋成型等后续工艺,完成功率器件的封装。
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