CN114724976A - 处理模块、基板处理系统以及处理方法 - Google Patents

处理模块、基板处理系统以及处理方法 Download PDF

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CN114724976A
CN114724976A CN202111579992.4A CN202111579992A CN114724976A CN 114724976 A CN114724976 A CN 114724976A CN 202111579992 A CN202111579992 A CN 202111579992A CN 114724976 A CN114724976 A CN 114724976A
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processing
wafer
processing module
row
module
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山岸孝幸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract

本发明提供能够降低占地面积的处理模块、基板处理系统以及处理方法。处理模块在处理模块的内部具有以两行两列的方式布局的四个载置台，构成布局的行间隔和列间隔为不同的尺寸。

Description

处理模块、基板处理系统以及处理方法
技术领域
本公开涉及处理模块、基板处理系统以及处理方法。
背景技术
作为基板处理系统中的对基板(以下，也称作晶圆)进行处理的处理模块，公知有一种在一个腔室同时处理四张晶圆的形态的处理模块(专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2019-087576号公报
发明内容
发明要解决的问题
本公开提供能够降低占地面积的处理模块、基板处理系统以及处理方法。
用于解决问题的方案
本公开的一技术方案的处理模块在处理模块的内部具有以两行两列的方式布局的四个载置台，构成布局的行间隔和列间隔为不同的尺寸。
发明的效果
根据本公开，能够降低占地面积。
附图说明
图1是表示本公开的一实施方式的基板处理系统的结构的一个例子的概略俯视图。
图2是表示本实施方式的基板处理装置的结构的一个例子的分解立体图。
图3是表示待机位置处的处理空间与旋转臂的位置关系的一个例子的图。
图4是表示晶圆的保持位置处的处理空间与旋转臂的位置关系的一个例子的图。
图5是表示本实施方式的基板处理装置内的晶圆的移动路径的一个例子的图。
图6是表示本实施方式的基板处理装置的排气路径的一个例子的图。
图7是表示本实施方式的基板处理装置的结构的一个例子的概略剖视图。
具体实施方式
以下，基于附图详细地说明所公开的处理模块、基板处理系统以及处理方法的实施方式。此外，公开技术并不被以下的实施方式所限定。
在一个腔室同时处理四张晶圆的形态的处理模块也具有四个分别载置四张晶圆的载置台，因此，占地面积也较大。相对于此，在设置基板处理系统的工厂中，谋求占地面积的降低，以提高空间效率。另外，有时在相对于处理模块送入送出晶圆的真空输送室连接有在一个腔室同时处理两张晶圆的形态的处理模块。也就是说，有时在真空输送室连接有不同的尺寸的处理模块。在这样的情况下，在真空输送室设置分别与不同的尺寸的处理模块相对应的晶圆输送机构。因此，期待降低处理模块的占地面积，并且进行晶圆输送机构的共用化。
(实施方式)
[基板处理系统的结构]
图1是表示本公开的一实施方式的基板处理系统的结构的一个例子的概略俯视图。图1所示的基板处理系统1具有送入送出口11、送入送出模块12、真空输送模块13a、13b和基板处理装置2、2a、2b。在图1中，将X方向设为左右方向，将Y方向设为前后方向，将Z方向设为上下方向(高度方向)，将送入送出口11设为前后方向上的近前侧，而进行说明。在送入送出模块12的近前侧互相朝向前后方向地连接有送入送出口11，在送入送出模块12的里侧互相朝向前后方向地连接有真空输送模块13a。
在送入送出口11载置有载体，该载体是收容有作为处理对象的基板的输送容器。基板是作为直径例如为300mm的圆形基板的晶圆W。送入送出模块12是用于在载体与真空输送模块13a之间进行晶圆W的送入送出的模块。送入送出模块12具有：常压输送室121，其利用输送机构120在常压气氛中在与载体之间进行晶圆W的交接；和加载互锁室122，其将载置晶圆W的气氛在常压气氛与真空气氛之间切换。
真空输送模块13a、13b分别具有形成为真空气氛的真空输送室14a、14b。在真空输送室14a、14b的内部分别配置有基板输送机构15a、15b。真空输送模块13a与真空输送模块13b之间配置有在真空输送模块13a、13b之间进行晶圆W的交接的通道16。真空输送室14a、14b例如分别形成为俯视时呈矩形。在真空输送室14a的四个侧壁中的在左右方向上互相相对的边，分别连接有基板处理装置2、2b。在真空输送室14b的四个侧壁中的在左右方向上互相相对的边，分别连接有基板处理装置2a、2b。
另外，在真空输送室14a的四个侧壁中的近前侧的边，连接有在送入送出模块12内设置的加载互锁室122。在常压输送室121与加载互锁室122之间、加载互锁室122与真空输送模块13a之间、真空输送模块13a、13b与基板处理装置2、2a、2b之间配置有闸阀G。闸阀G对分别在互相连接的模块设置的晶圆W的送入送出口进行开闭。
基板输送机构15a在真空气氛中在送入送出模块12、基板处理装置2、2b和通道16之间进行晶圆W的输送。另外，基板输送机构15b在真空气氛中在通道16和基板处理装置2a、2b之间进行晶圆W的输送。基板输送机构15a、15b由多关节臂形成，具有保持晶圆W的基板保持部。基板处理装置2、2a、2b在真空气氛中对多张(例如两张或四张)晶圆W一并进行使用了处理气体的基板处理。因此，基板输送机构15a、15b的基板保持部例如构成为能够同时保持两张晶圆W，以向基板处理装置2、2a、2b一并交接两张晶圆W。此外，基板处理装置2、2a能够利用设于内部的旋转臂将在真空输送模块13a、13b侧的载置台接收到的晶圆W向里侧的载置台输送。另外，基板输送机构15a、15b为晶圆输送机构的一个例子。
另外，基板处理装置2、2a、2b的载置台的Y方向间距(行间隔)共同为间距Py，因此，该基板处理装置2、2a、2b能够连接于真空输送模块13a、13b的在左右方向上互相相对的边的任一部位。在图1的例子中，在真空输送模块13a连接有基板处理装置2和基板处理装置2b，在真空输送模块13b连接有基板处理装置2a和基板处理装置2b。此外，基板处理装置2和基板处理装置2a是与工艺用途相对应的、包括与一个载置台对应的处理空间的反应器的直径不同且作为载置台的X方向间距(列间隔)的间距Px1、Px2不同的基板处理装置。另外，基板处理装置2a的间距Px2是与间距Py相同的值。也就是说，间距Py对应于最大的反应器的尺寸。即，基板处理装置2的反应器的尺寸比基板处理装置2a小，因此能够使间距Px1小于间距Px2。
基板处理装置2a的内部结构除了间距Px2与间距Px1不同这方面以外与基板处理装置2基本同样，省略其说明。此外，基板处理装置2b是具有两个载置台的类型的基板处理装置，在基板处理装置2b内不进行晶圆的输送，该基板处理装置2b是将两张晶圆同时送入而进行处理并同时送出的类型的基板处理装置。此外，为了方便说明，将图1的XYZ坐标中的X方向间距设为列间隔，将Y方向间距设为行间隔，而进行说明，但例如，也存在基板处理装置2、2a配置于真空输送模块13b的里侧的边的情况，因此，在该情况下，需要将列间隔与行间隔调换地进行考虑。也就是说，哪个是行哪个是列需要以基板处理装置2、2a与真空输送模块13a、13b接触的面为基准进行考虑。
基板处理系统1具有控制部8。控制部8例如是具备处理器、存储部、输入装置、显示装置等的计算机。控制部8控制基板处理系统1的各部分。控制部8能够使用输入装置进行命令的输入操作等，以供操作者对基板处理系统1进行管理。另外，在控制部8中，能够利用显示装置可视化地显示基板处理系统1的运转状况。而且，在控制部8的存储部存储有用于利用处理器控制基板处理系统1所执行的各种处理的控制程序以及制程数据等。控制部8的处理器执行控制程序，按照制程数据控制基板处理系统1的各部分，从而由基板处理系统1执行期望的基板处理。
[基板处理装置的结构]
接着，使用图2至图7，说明将基板处理装置2应用于例如对晶圆W进行等离子体CVD(Chemical Vapor Deposition：化学气相沉积)处理的成膜装置的例子。此外，基板处理装置2是处理模块的一个例子。图2是表示本实施方式的基板处理装置的结构的一个例子的分解立体图。如图2所示，基板处理装置2包括俯视时呈长方形的处理容器(真空容器)20。处理容器20构成为能够将内部维持为真空气氛。处理容器20构成为利用后述的气体供给部4和歧管36封闭上表面的开放部。此外，在图2中，以容易判断处理空间S1～S4与旋转臂3之间的关系的方式省略了内部的隔壁等。处理容器20在与真空输送室14a或真空输送室14b连接的一侧的侧面以在Y方向上排列的方式形成有两个送入送出口21。送入送出口21利用闸阀G进行开闭。
在处理容器20的内部设有多个处理空间S1～S4。在处理空间S1～S4分别配置有载置台22。载置台22能够在上下方向上移动，在晶圆W的处理时，向上部移动，在晶圆W的输送时，向下部移动。在处理空间S1～S4的下部设有输送空间T，该输送空间T将处理空间S1～S4连接，利用旋转臂3进行晶圆W的输送。另外，处理空间S1、S2的下部的输送空间T与各送入送出口21连接，利用基板输送机构15a、15b在与真空输送室14a、14b之间进行晶圆W的送入送出。
在从上表面侧观察时，处理空间S1～S4的各载置台22以两行两列的方式布局。该布局的行间隔与列间隔成为不同的尺寸。也就是说，若比较载置台22的作为Y方向间距(行间隔)的间距Py与作为X方向间距(列间隔)的间距Px1，则间距Py＞间距Px1。
图3是表示待机位置处的处理空间与旋转臂的位置关系的一个例子的图。图4是表示晶圆的保持位置处的处理空间与旋转臂的位置关系的一个例子的图。如图3和图4所示，旋转臂3具有：四个末端执行器32，其能够对分别载置于载置台22的晶圆W进行保持；和基部构件33，其旋转轴线位于两行两列的布局的中心位置。四个末端执行器32以成为X形状的方式连接于基部构件33。旋转臂3的X形状成为如下这样的结构：在图4所示的晶圆W的保持位置处，X形状的与行间隔对应的Y方向上的尺寸和与所述列间隔对应的X方向上的尺寸不同。
在图3所示的待机位置处，旋转臂3位于各个处理空间S1～S4之间，从而不妨碍各载置台22的上下方向上的移动。图3是在各载置台22载置有晶圆W的状态。说明从该状态例如以调换第一列和第二列的晶圆W的方式进行输送的情况、也就是将处理空间S1、S2的晶圆W向处理空间S3、S4输送并将处理空间S3、S4的晶圆W向处理空间S1、S2输送的情况下的旋转臂3的运动。
首先，将各载置台22移动到下侧的输送空间T的交接位置，使设于各载置台22的后述的升降销26上升而抬起晶圆W。接着，使旋转臂3顺时针旋转大约30°，如图4所示，将各末端执行器32插入于载置台22与晶圆W之间。接着，使升降销26下降而将晶圆W载置于各末端执行器32。接着，使旋转臂3顺时针旋转180°，将晶圆W向各载置台22上的保持位置输送。当各载置台22使升降销26上升而接收晶圆W时，使旋转臂3逆时针旋转大约30°，而向待机位置移动。如此，能够利用旋转臂3以调换第一列和第二列的晶圆W的方式进行输送。由此，例如，在处理空间S1、S2和处理空间S3、S4重复进行不同的处理这样的情况(例如，重复进行成膜处理和退火处理的情况)下，能够缩短与晶圆W的输送相关的时间。
图5是表示本实施方式的基板处理装置内的晶圆的移动路径的一个例子的图。在图5中，说明自真空输送室14a向基板处理装置2的内部输送晶圆W的情况下的移动路径。首先，如路径F1所示，利用真空输送室14a的基板输送机构15a，在与同一列的载置台22对应的处理空间S1、S2的下部的输送空间T的交接位置，向各载置台22同时送入两张晶圆W。处理空间S1、S2的各载置台22使升降销26上升而接收晶圆W。
接着，使旋转臂3自待机位置顺时针旋转大约30°，而将末端执行器32插入于处理空间S1、S2的下部的交接位置处的载置台22与晶圆W之间，使升降销26下降而将晶圆W载置于各末端执行器32。在载置晶圆W时，如路径F2所示，使旋转臂3顺时针旋转180°，而向处理空间S3、S4的下部的输送空间T的交接位置处的载置台22上(旋转臂3的保持位置)输送晶圆W。在处理空间S3、S4的下部的交接位置处的载置台22使升降销26上升而接收晶圆W时，使旋转臂3逆时针旋转大约30°，而向待机位置移动。在该状态下，在处理空间S1、S2的载置台22未载置晶圆W，在处理空间S3、S4的载置台22载置有晶圆W。接着，如路径F1所示，利用真空输送室14a的基板输送机构15a，在处理空间S1、S2的下部的交接位置，向各载置台22同时送入两张晶圆W，将晶圆W载置于处理空间S1、S2的载置台22，从而在所有处理空间S1～S4的载置台22均载置有晶圆W。
送出时也同样地，首先，利用基板输送机构15a先将在处理空间S1、S2的下部的交接位置处的载置台22载置着的晶圆W向真空输送室14a送出。接着，利用旋转臂3将在处理空间S3、S4的下部的交接位置处的载置台22载置着的晶圆W向处理空间S1、S2的下部的交接位置处的载置台22输送。接着，利用基板输送机构15a将在处理空间S1、S2的下部的交接位置处的载置台22载置着的晶圆W向真空输送室14a送出。如此，通过使用旋转臂3和能够同时送入送出两张晶圆W的基板输送机构15a，从而能够相对于处理空间S1～S4送入送出晶圆W。
另外，在利用旋转臂3进行晶圆W的输送时，也可以检测晶圆W相对于作为输送目的地的载置台22的偏移，使载置台22在XY平面内微小地移动，从而校正晶圆W的偏移。在该情况下，基板处理装置2在被旋转臂3保持着的晶圆W的旋转轨迹上、且是行间隔内或列间隔内的旋转对称位置分别具有检测晶圆W的偏移的偏移检测传感器。在图5的例子中，在行间隔内的、处理空间S1与S2之间以及处理空间S3与S4之间分别具有传感器31a、31b。
传感器31a、31b均是由例如两个光学传感器构成的组，且配置于穿过基板处理装置2的中心、也就是两行两列的布局的中心位置的X方向的直线上。这是为了，将处理容器20的热膨胀的膨胀方向在两个传感器中设为同一方向，从而减少误差。此外，传感器31a、31b的配置位置只要是穿过基板处理装置2的中心的直线上即可，并不限定于X方向。基板处理装置2对利用传感器31a、31b检测到的晶圆W的前后的边缘与在旋转臂3设置的未图示的编码器的输出结果进行比较，从而检测晶圆W的偏移量。
在图5的例子中，地点P24表示自处理空间S2向处理空间S4进行输送时晶圆W的后侧的边缘经过了传感器31b的状态，地点P42表示自处理空间S4向处理空间S2进行输送时晶圆W的后侧的边缘经过了传感器31a的状态。基板处理装置2能够根据检测到的偏移量来使载置台22在XY平面内微小地移动，从而校正晶圆W的偏移。也就是说，基板处理装置2以使晶圆W在载置台22上升了时位于处理空间S1～S4的中心的方式调整偏移。此外，在此所说的微小是指5mm以内的程度。
图6是表示本实施方式的基板处理装置的排气路径的一个例子的图。在图6中，示出了在拆除了后述的气体供给部4的状态下从上表面观察处理容器20的情况。如图6所示，在基板处理装置2的中心配置有歧管36。歧管36具有与处理空间S1～S4连接的多个排气通路361。各排气通路361在歧管36的中心下部连接于后述的推力螺母35的孔351。各排气通路361与在处理空间S1～S4的上部设置的各引导构件362内的环状的流路363连接。也就是说，处理空间S1～S4内的气体经由流路363、排气通路361、孔351而向后述的合流排气口205排气。
图7是表示本实施方式的基板处理装置的结构的一个例子的概略剖视图。图7的剖面相当于图6所示的基板处理装置2的A-A线处的剖面。四个处理空间S1～S4互相同样地构成，分别形成于载置晶圆W的载置台22和与载置台22相对地配置的气体供给部4之间。换言之，在处理容器20内，针对四个处理空间S1～S4分别设有载置台22和气体供给部4。在图7中，示出了处理空间S1和S3。以下，以处理空间S1为例进行说明。
载置台22兼用作下部电极，例如形成为由金属或埋入有金属网电极的氮化铝(AlN)构成的扁平的圆柱状。载置台22被支承构件23自下方支承。支承构件23形成为圆筒状，向铅垂下方延伸，并贯穿处理容器20的底部27。支承构件23的下端部位于处理容器20的外部，并连接于旋转驱动机构600。支承构件23利用旋转驱动机构600进行旋转。载置台22构成为能够根据支承构件23的旋转而旋转。另外，在支承构件23的下端部设有调整载置台22的位置和倾斜度的调整机构700。载置台22构成为能够利用调整机构700借助支承构件23在处理位置与交接位置之间升降。在图7中，分别用实线描绘位于交接位置的载置台22，用虚线表示位于处理位置的载置台22。另外，在交接位置，示出了将末端执行器32插入于载置台22与晶圆W之间而自升降销26接收晶圆W的状态。此外，处理位置是指执行基板处理(例如，成膜处理)时的位置，交接位置是指在与基板输送机构15a或末端执行器32之间进行晶圆W的交接的位置。
在载置台22埋设有加热器24。加热器24将载置于载置台22的各晶圆W加热到例如60℃～600℃左右。另外，载置台22连接于接地电位。
另外，在载置台22设有多个(例如三个)销用贯通孔26a，在这些销用贯通孔26a的内部分别配置有升降销26。销用贯通孔26a设为自载置台22的载置面(上表面)贯通到与载置面相对的背面(下表面)。升降销26以能够滑动的方式插入于销用贯通孔26a。升降销26的上端吊挂于销用贯通孔26a的载置面侧。即，升降销26的上端具有大于销用贯通孔26a的直径，在销用贯通孔26a的上端形成有直径和厚度大于升降销26的上端且能够收容升降销26的上端的凹部。由此，升降销26的上端卡定于载置台22并吊挂于销用贯通孔26a的载置面侧。另外，升降销26的下端自载置台22的背面向处理容器20的底部27侧突出。
在使载置台22上升到处理位置的状态下，升降销26的上端收纳于销用贯通孔26a的载置面侧的凹部。在从该状态使载置台22向交接位置下降时，升降销26的下端与处理容器20的底部27抵接，升降销26在销用贯通孔26a内移动，如图7所示，升降销26的上端自载置台22的载置面突出。此外，在该情况下，也可以是，升降销26的下端不与处理容器20的底部27抵接，而与位于底部侧的升降销抵接构件这样的构件抵接。
气体供给部4借助由绝缘构件构成的引导构件362设于处理容器20的顶部且是载置台22的上方。气体供给部4具有作为上部电极的功能。气体供给部4具有：盖体42；喷淋板43，其构成以与载置台22的载置面相对的方式设置的相对面；和气体的流通室44，其形成于盖体42与喷淋板43之间。在盖体42连接有气体供给管51，并且在喷淋板43例如纵横地排列有在厚度方向上贯通的气体喷出孔45，气体呈喷淋状朝向载置台22喷出。
各气体供给部4借助气体供给管51连接于气体供给系统50。气体供给系统50例如包括：作为处理气体的反应气体(成膜气体)、吹扫气体、清洁气体的供给源、配管、阀V、流量调整部M等。气体供给系统50例如具有：清洁气体供给源53、反应气体供给源54、吹扫气体供给源55、在各个供给源的配管设置的阀V1～V3以及流量调整部M1～M3。
清洁气体供给源53借助流量调整部M1、阀V1、远程等离子体单元(RPU：RemotePlasma Unit)531连接于清洁气体供给通路532。清洁气体供给通路532在RPU531的下游侧分支成四个系统，分别连接于气体供给管51。针对每个在RPU531的下游侧分支而成的分支管设有阀V11～V14，在清洁时，打开对应的阀V11～V14。此外，在图7中，为了方便，仅示出了阀V11、V14。
反应气体供给源54和吹扫气体供给源55分别借助流量调整部M2、M3以及阀V2、V3连接于气体供给通路52。气体供给通路52借助气体供给管510连接于气体供给管51。此外，在图7中，气体供给通路52和气体供给管510统一地示出了与各气体供给部4对应的各供给通路和各供给管。
在喷淋板43借助匹配器40连接有高频电源41。喷淋板43具有作为与载置台22相对的上部电极的功能。在向作为上部电极的喷淋板43与作为下部电极的载置台22之间施加高频电力时，能够利用电容耦合将自喷淋板43供给到处理空间S1的气体(在本例子中为反应气体)等离子体化。
接着，说明自处理空间S1～S4向合流排气口205的排气路径。如图6和图7所示，排气路径从在处理空间S1～S4的上部设置的各引导构件362内的环状的流路363，穿过各排气通路361，经由歧管36的中心下部的合流部、孔351，去向合流排气口205。此外，排气通路361的剖面例如形成为圆形状。
在各处理空间S1～S4的周围，以分别包围各处理空间S1～S4的方式设有排气用的引导构件362。引导构件362例如是设为与位于处理位置的载置台22空开间隔地包围该载置台22的周围的区域的环状体。引导构件362构成为在内部形成例如纵剖面呈矩形状且俯视时呈环状的流路363。在图6中，概略地示出了处理空间S1～S4、引导构件362、排气通路361以及歧管36。
引导构件362形成朝向处理空间S1～S4开口的狭缝状的狭缝排气口364。由此，在各个处理空间S1～S4的侧周部沿着周向形成有狭缝排气口364。在流路363连接有排气通路361，使自狭缝排气口364排出来的处理气体朝向歧管36的中心下部的合流部、孔351流通。
如图6所示，在从上表面侧观察时，处理空间S1-S2、S3-S4的组围绕歧管36以180°旋转对称的方式配置。由此，自各处理空间S1～S4借助狭缝排气口364、引导构件362的流路363、排气通路361到达孔351的处理气体的流通路径围绕孔351以180°旋转对称的方式形成。
孔351借助合流排气口205连接于排气管61，该合流排气口205作为在处理容器20的中心部配置的双轴真空密封件34的推力配管341的内侧。排气管61借助阀机构7连接于构成真空排气机构的真空泵62。真空泵62例如针对一个处理容器20设有一个，各真空泵62的下游侧的排气管合流，例如连接于工厂排气系统。
阀机构7对形成于排气管61内的处理气体的流通路径进行开闭，该阀机构7例如具有壳体71和开闭部72。在壳体71的上表面形成有与上游侧的排气管61连接的第1开口部73，在壳体71的侧面形成有与下游侧的排气管连接的第2开口部74。
开闭部72例如具有形成为堵塞第1开口部73的大小的开闭阀721和设于壳体71的外部并使开闭阀721在壳体71内升降的升降机构722。开闭阀721构成为在图7中由点划线表示的堵塞第1开口部73的封闭位置与图7中由实线表示的向比第1开口部73和第2开口部74靠下方侧的位置退避的开放位置之间升降自如。当开闭阀721位于封闭位置时，合流排气口205的下游端被封闭，处理容器20内的排气被停止。另外，当开闭阀721位于开放位置时，合流排气口205的下游端被打开，处理容器20内被排气。
接着，说明双轴真空密封件34和推力螺母35。双轴真空密封件34具有推力配管341、轴承342、344、转子343、主体部345、磁性流体密封件346、347和直接驱动马达348。
推力配管341是不旋转的中心轴，借助推力螺母35承受对基板处理装置2的中心上部施加的推力负荷。也就是说，在将处理空间S1～S4设为真空气氛时，推力配管341承受对基板处理装置2的中心部施加的真空负荷，从而抑制基板处理装置2的上部的变形。另外，推力配管341是中空构造，其内部成为合流排气口205。推力配管341的上表面与推力螺母35的下表面抵接。另外，推力配管341的上部的内表面与推力螺母35的内周侧的凸部的外表面之间利用未图示的O形密封圈密封。
推力螺母35的外周侧面成为螺纹构造，推力螺母35与处理容器20的中心部的隔壁螺纹结合。处理容器20的中心部在其上部设有歧管36。推力负荷由歧管36、处理容器20的中心部的隔壁、推力螺母35以及推力配管341承受。
轴承342是在推力配管341侧保持转子343的径向轴承。轴承344是在主体部345侧保持转子343的径向轴承。转子343与推力配管341呈同心圆地配置，是旋转臂3的中心的旋转轴。另外，在转子343连接有基部构件33。通过转子343旋转，从而旋转臂3、也就是末端执行器32和基部构件33旋转。
主体部345在其内部收纳轴承342、344、转子343、磁性流体密封件346、347和直接驱动马达348。磁性流体密封件346、347配置于转子343的内周侧和外周侧，将处理空间S1～S4相对于外部密封。直接驱动马达348与转子343连接，通过驱动转子343，从而使旋转臂3旋转。
如此，在双轴真空密封件34中，第1轴即作为不旋转的中心轴的推力配管341支承处理容器20的上部的负荷并且承担气体排气配管的作用，第2轴即转子343承担使旋转臂3旋转的作用。
以上，根据本实施方式，处理模块(基板处理装置2)在处理模块的内部具有以两行两列的方式布局的四个载置台22，构成布局的行间隔与列间隔为不同的尺寸。其结果，能够降低处理模块的占地面积，并且进行晶圆输送机构的共用化。
另外，根据本实施方式，处理模块还具有旋转臂3，该旋转臂3包括：四个末端执行器32，其能够保持分别载置于四个载置台22的晶圆W；和基部构件33，其旋转轴线位于布局的中心位置，四个末端执行器32以成为X形状的方式连接于基部构件33，X形状的与行间隔对应的Y方向上的尺寸和与列间隔对应的X方向上的尺寸不同。其结果，能够降低处理模块的占地面积，并且进行晶圆输送机构的共用化。
另外，根据本实施方式，处理模块还具有偏移检测传感器(传感器31a、31b)，该偏移检测传感器分别在被旋转臂3保持着的晶圆W的旋转轨迹上、且是行间隔内或列间隔内的旋转对称的位置检测晶圆W的偏移。其结果，能够修正利用旋转臂3进行输送时的晶圆W的偏移。
另外，根据本实施方式，四个载置台22分别能够根据偏移检测传感器所检测到的晶圆W的位置来在至少XY平面内微小地移动。其结果，能够修正因旋转臂3的输送等而引起的晶圆W的偏移。
另外，根据本实施方式，能够同时送入或送出两张载置于同一列的载置台22的晶圆W。其结果，能够与两张型的基板处理装置进行晶圆输送机构的共用化。
另外，根据本实施方式，基板处理系统是多个处理模块(基板处理装置2、2a)连接于具有晶圆输送机构(基板输送机构15a、15b)的真空输送室14a、14b的基板处理系统1，多个处理模块分别在内部具有以两行两列的方式布局的四个载置台。多个处理模块分别是，沿着真空输送室14a、14b侧的面的方向上的、布局的载置台之间的Y方向间距在多个处理模块中的一个处理模块和其他的处理模块中相同，与真空输送室14a、14b侧的面垂直的方向上的、布局的载置台之间的X方向间距在一个处理模块和其他的处理模块中不同。其结果，能够混合占地面积不同的处理模块，并且能够进行晶圆输送机构的共用化。
另外，根据本实施方式，在处理模块(基板处理装置2)的处理方法中，处理模块具有：四个载置台22，其在该处理模块的内部以两行两列的方式布局，构成布局的行间隔和列间隔为不同的尺寸；以及旋转臂3，其包括能够保持分别载置于四个载置台22的晶圆W的四个末端执行器32和旋转轴线位于布局的中心位置的基部构件33，四个末端执行器32以成为X形状的方式连接于基部构件33，X形状的与行间隔对应的Y方向上的尺寸和与列间隔对应的X方向上的尺寸不同，在处理方法中，利用旋转臂3以将布局的第一列和第二列的晶圆W调换的方式进行输送，从而在第一列和第二列重复进行不同的处理。其结果，能够缩短各个处理之间的与晶圆W的输送相关的时间。
应该认为，此次公开了的实施方式在所有方面均为例示，并不是限制性的。上述的实施方式也可以在不脱离添附的权利要求书及其主旨的范围内以各种各样的形态进行省略、置换、变更。
例如，在上述实施方式中，说明了基板处理装置2是进行等离子体CVD处理作为基板处理的装置的例子，但也可以将公开技术应用于进行等离子体蚀刻等其他的基板处理的任意的装置。
此外，在上述的实施方式中，作为双轴真空密封件34中的转子343的驱动方法，使用了直接驱动马达348，但并不限定于此。例如，也可以在转子343设置带轮，并由在双轴真空密封件34的外部设置的马达利用同步带进行驱动。

Claims (7)

1.一种处理模块，其中，
在处理模块的内部具有以两行两列的方式布局的四个载置台，
构成所述布局的行间隔与列间隔为不同的尺寸。
2.根据权利要求1所述的处理模块，其中，
该处理模块还具有旋转臂，该旋转臂包括：四个末端执行器，其能够保持分别载置于所述四个载置台的晶圆；和基部构件，其旋转轴线位于所述布局的中心位置，所述四个末端执行器以成为X形状的方式连接于所述基部构件，所述X形状的与所述行间隔对应的Y方向上的尺寸和与所述列间隔对应的X方向上的尺寸不同。
3.根据权利要求2所述的处理模块，其中，
该处理模块还具有偏移检测传感器，该偏移检测传感器分别在被所述旋转臂保持着的所述晶圆的旋转轨迹上、且是所述行间隔内或所述列间隔内的旋转对称的位置检测所述晶圆的偏移。
4.根据权利要求3所述的处理模块，其中，
所述四个载置台分别能够根据所述偏移检测传感器所检测到的所述晶圆的位置来在至少XY平面内微小地移动。
5.根据权利要求2～4中任一项所述的处理模块，其中，
能够同时送入或送出两张载置于同一列的所述载置台的所述晶圆。
6.一种基板处理系统，其是多个处理模块连接于具有晶圆输送机构的真空输送室的基板处理系统，其中，
所述多个处理模块分别在内部具有以两行两列的方式布局的四个载置台，
沿着所述真空输送室侧的面的方向上的、所述布局的所述载置台之间的Y方向间距在所述多个处理模块中的一个处理模块和其他的处理模块中相同，与所述真空输送室侧的面垂直的方向上的、所述布局的所述载置台之间的X方向间距在所述一个处理模块和所述其他的处理模块中不同。
7.一种处理方法，其是处理模块的处理方法，其中，
所述处理模块具有：
四个载置台，其在该处理模块的内部以两行两列的方式布局，构成所述布局的行间隔与列间隔为不同的尺寸；以及
旋转臂，其包括：四个末端执行器，其能够保持分别载置于所述四个载置台的晶圆；和基部构件，其旋转轴线位于所述布局的中心位置，所述四个末端执行器以成为X形状的方式连接于所述基部构件，所述X形状的与所述行间隔对应的Y方向上的尺寸和与所述列间隔对应的X方向上的尺寸不同，
利用所述旋转臂以将所述布局的第一列和第二列的所述晶圆调换的方式进行输送，从而在所述第一列和所述第二列重复进行不同的处理。
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US20230386870A1 (en) * 2022-05-26 2023-11-30 Taiwan Semiconductor Manufacturing Company Ltd. Wet processing system and system and method for manufacturing semiconductor structure

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