CN114717655B - 一种用于钻石定制图案和电极的晶体内部图形化方法 - Google Patents
一种用于钻石定制图案和电极的晶体内部图形化方法 Download PDFInfo
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Abstract
一种用于钻石定制图案和电极的晶体内部图形化方法，本发明的目的是为了解决现有钻石内部难以定制图案和电极的问题。本发明晶体内部图形化方法如下：一、将选取所要制作于钻石晶体内部的图案转化为黑白模式，作为光刻机输入掩膜图形；二、将钻石衬底置于混酸溶液中超声清洗；三、采用光刻工艺以光刻胶作为掩模版，通过掩模在钻石表面沉积金属膜或非金属膜；四、将带有图案的钻石衬底置于等离子体化学气相沉积系统中，通入生长气体进行外延生长，得到带有定制图案的钻石。本发明利用化学气相沉积工艺再外延一层晶体，将图案覆盖于晶体内部能对图案实现很好的保护作用，满足钻石内部图案的定制需求。
Description
技术领域
本发明属于半导体器件领域和钻石加工领域，具体涉及用于钻石定制图案和电极的晶体内部图形化方法。
背景技术
化学气相沉积技术的进步使得合成金刚石品质尺寸逐渐提升。合成金刚石在珠宝首饰领域的认可度也在逐渐提高，品质较高的合成金刚石被加工成钻石，供消费者选购。钻石可以利用激光进行切割与加工，也可以利用激光使其表面或者其亚表面石墨化，从而达到雕刻特定图案的目的。然而，激光加工图案进行钻石雕刻是有损加工，且精度受限。实现钻石内部定制图案的图形化方法可以使钻石大大增值。利用此技术可以将人物照、文字、图标等定制于晶体内部，满足钻石私人定制的需求。此外，金属化图案也可以用于制作基于晶体内部电极的各种半导体器件，以发挥金刚石作为半导体材料的优异性能。
发明内容
本发明的目的是为了解决现有钻石内部难以定制图案和电极的问题，而提供一种用于钻石定制图案和电极的晶体内部图形化方法，以实现钻石内部不同尺寸的人像、文字、金属电极等的图案化定制。
本发明用于钻石定制图案和电极的晶体内部图形化方法按照以下步骤实现：
一、将选取所要制作于钻石晶体内部的图案转化为黑白模式，作为光刻机输入掩膜图形；
二、将钻石(金刚石)衬底置于混酸溶液中，加热至煮沸，经超声清洗后得到清洗后的钻石衬底；
三、在清洗后的钻石衬底表面旋涂光刻胶，掩膜图形输入光刻机，采用光刻工艺以光刻胶作为掩模版，通过掩模在钻石表面沉积金属膜或非金属膜，去除光刻胶后形成所需要的图案，得到带有图案的钻石衬底；
四、将带有图案的钻石衬底置于等离子体化学气相沉积系统中，通入生长气体进行外延生长，得到带有定制图案的钻石。
本发明通过光刻技术结合薄膜沉积工艺实现钻石表面膜层的图案化沉积。对于首饰、收藏品来说，图案只沉积于晶体表面，膜层会因为刮蹭，摩擦而脱落，不利于保护。利用化学气相沉积工艺再外延一层晶体，将图案覆盖于晶体内部能对图案实现很好的保护作用。对于半导体器件来说，晶体内部图案定制成各种电极形状，能实现半导体器件的内部电极结构，以提升器件性能。在晶体外延的过程中，非金属覆盖区域为典型的同质外延生长；在金属覆盖区域，应该是同质外延区域晶体的横向生长为主，实现了金属覆盖区域上方的钻石膜层的覆盖。
本发明带有定制的内部图案的钻石晶体能够满足钻石首饰的个性化定制需求，以增加钻石的附加值。也可以在晶体内部定制金属电极图案，以实现半导体器件内部电极。
附图说明
图1为实施例中正胶光刻输入图形示意图(白色区域为金属沉积区域)；
图2为实施例中钻石表面镀完金属膜后光学显微镜透射模式照片；
图3为实施例中钻石表面镀完金属膜后光学显微镜透射模式下局部放大照片；
图4为实施例中钻石表面镀完金属膜后光学显微镜透射模式图标照片；
图5为实施例中钻石表面镀完金属膜后光学显微镜透射模式文字照片；
图6为实施例中微波等离子体化学气相沉积生长完成后的照片；
图7为实施例中微波等离子体化学气相沉积生长完成后光学显微镜透射模式照片；
图8为实施例中微波等离子体化学气相沉积生长完成后图标照片；
图9为实施例中微波等离子体化学气相沉积生长完成后文字照片；
图10为实施例中微波等离子体化学气相沉积生长完成后的内部电极照片。
具体实施方式
具体实施方式一：本实施方式用于钻石定制图案和电极的晶体内部图形化方法按照以下步骤实施：
一、将选取所要制作于钻石晶体内部的图案转化为黑白模式，作为光刻机输入掩膜图形；
二、将钻石(金刚石)衬底置于混酸溶液中，加热至煮沸，经超声清洗后得到清洗后的钻石衬底；
三、在清洗后的钻石衬底表面旋涂光刻胶，掩膜图形输入光刻机，采用光刻工艺以光刻胶作为掩模版，通过掩模在钻石表面沉积金属膜或非金属膜，去除光刻胶后形成所需要的图案，得到带有图案的钻石衬底；
四、将带有图案的钻石衬底置于等离子体化学气相沉积系统中，通入生长气体进行外延生长，得到带有定制图案的钻石。
本实施方式步骤二选取的钻石衬底可以是单晶钻石衬底或者多晶钻石衬底；尺寸在0.01×0.01×0.001mm到500×500×20mm之间。
本实施方式步骤一可将图像加工成不锈钢或者硅等掩膜版，步骤三利用不锈钢或者硅等掩膜版在晶体表面制作膜层图案。
本实施方式步骤三在钻石表面优选沉积金属膜。
本实施方式步骤四中微波源功率为生长完成后，关闭甲烷，二氧化碳等含碳气体，保持15min，待等离子体中含碳基团耗尽，缓慢降温，降气压，待舱体气压降至10-3mbar以下，开舱。
具体实施方式二：本实施方式与具体实施方式一不同的是步骤二将钻石衬底置于硝酸和硫酸组成的混酸溶液中，加热至200～400℃，加热时间为30～200min。
本实施方式中硝酸和硫酸的体积比为1:3～1:1。
具体实施方式三：本实施方式与具体实施方式一或二不同的是步骤二所述的超声清洗是依次使用去离子水、丙酮、酒精进行超声清洗。
具体实施方式四：本实施方式与具体实施方式一至三之一不同的是步骤三中沉积金属膜或非金属膜的方法为磁控溅射法、热蒸发法、电子束蒸发法或原子层沉积法。
具体实施方式五：本实施方式与具体实施方式一至四之一不同的是步骤三中沉积金属膜或非金属膜的厚度为5～1000nm。
具体实施方式六：本实施方式与具体实施方式四不同的是步骤三中沉积膜的材质为Au、Pt、Ru、Pd、Au、Ru、Ti/Au、Ti/Pt/Au、Ti/Ru、Ti/Mo、Cr/Au、Cr/Ru、W、Si、SiO2、TiO2、SiN、Al2O3、Cu、Rh、Mo、Pb、Ir、W、SiC、GaN中的一种或者多种叠层膜。
具体实施方式七：本实施方式与具体实施方式一至六之一不同的是步骤四中的化学气相沉积方法为微波等离子体化学气相沉积、射频等离子体化学气相沉积、激光诱导等离子体化学气相沉积、直流电弧等离子体子化学气相沉积或者热丝化学气相沉积。
本实施方式化学气相沉积过程中，等离子体化学气相沉积系统中的舱体抽真空，真空度为10-7～10-5mbar。
具体实施方式八：本实施方式与具体实施方式一至七之一不同的是步骤四中所述的生长气体包括CH4和H2。
具体实施方式九：本实施方式与具体实施方式八不同的是生长气体还包括CO2、O2、N2、Ar、硼烷、磷烷中的一种或多种混合气体。
本实施方式控制CH4流量为0～100sccm，CO2流量为0～50sccm，H2流量为1～1000sccm，N2流量为0～20sccm，Ar流量为0～500sccm，硼烷流量为0～20sccm，磷烷为0～20sccm。
具体实施方式十：本实施方式与具体实施方式一至九之一不同的是步骤四中控制微波源功率为60～6000W，外延生长的温度为600～1100℃。
具体实施方式十一：本实施方式与具体实施方式一至十之一不同的是步骤四中外延生长时间为30min～300min。
实施例：本实施例用于钻石定制图案和电极的晶体内部图形化方法按照以下步骤实施：
一、将选取所要制作于钻石晶体内部的图案转化为黑白模式，作为光刻机输入掩膜图形，白色区域为图案区域，黑色为掩膜区域，作为光刻机输入掩膜图形(如图1所示)；
二、选取3×3×1mm的化学气相沉积单晶钻石衬底，将钻石衬底置于混酸溶液中，加热至煮沸，经超声清洗后得到清洗后的钻石衬底；
三、在清洗后的钻石衬底表面旋涂光刻胶AZ5214，利用光刻机MicroWriter ML3读取图1并使钻石衬底表面的光刻胶曝光，然后用显影液对光刻胶显影，利用完成显影的光刻胶作为掩模版，利用磁控溅射镀膜方法通过光刻掩膜在钻石表面依次沉积Ti/Pt金属膜，沉积气压为0.5Pa，射频源功率依次为60W与50W，沉积时间依次为50s与4min，最后利用去胶液除去多余光刻胶形成所需要的金属图案，得到带有图案的钻石衬底，如图2-图5所示；
四、将带有图案的钻石衬底置于等离子体化学气相沉积系统中，舱体抽真空，真空度达到5×10-6mbar，通入氢气，流量为196sccm，设定气压为10mbar，开启微波电源，交替提高气压与微波功率，使钻石衬底温度达到800℃，CVD生长钻石过程中温度会受到气压、功率、衬底等影响，会在一定范围内变化，但是在生长初期，为了防止金属变形，保持图案精准，应严格控制温度不能超过800℃，并在达到800℃后，立即通入CH4，流量为4sccm，进行外延生长，生长一段时间后，温度可以提高，生长两个小时后，取出样品，得到带有定制的内部图案的钻石晶体。
本实施例步骤四外延生长得到的外延层厚度为10微米。
通过对比图1-图5可以看出，图案中的图形完好的复制于钻石表面。在钻石表面形成了人像，图标与文字的图案。
经过化学气相沉积生长，得到带有内部金属图案的钻石晶体。图6展示了3×3×1mm的带有内部金属图案的钻石晶体的全貌，可以看出，人物相片、图标与文字大致可辨。可以推广的是，选取更大的尺寸的钻石晶体，如10×10mm，则制作出的相片更为直观。为了辨认所制作样品的细节。同样选择了在显微镜下对其观察。从图7中可以看出，晶体内部的人物相片、图标与文字完好的保持了掩模图像中的照片的原貌。通过图8与图9的图标与文字放大图可以看出，晶体内部图案细节完整，并且可以看出明显的晶体表面生长台阶，这是钻石外延生长的典型形貌。同样的方法，也可以用于制作晶体内部金属电极，如图10所示。
综上，本发明所述的用于钻石定制图案和电极的晶体内部图形化方法能完好的实现晶体内部图案的定制，可以用于钻石首饰个性化定制与半导体器件，具有极大应用价值。
Claims (8)
1.用于钻石定制图案和电极的晶体内部图形化方法，其特征在于该用于钻石定制图案和电极的晶体内部图形化方法按照以下步骤实现：
一、将选取所要制作于钻石晶体内部的图案转化为黑白模式，作为光刻机输入掩膜图形；
二、将钻石衬底置于混酸溶液中，加热至煮沸，经超声清洗后得到清洗后的钻石衬底；
三、在清洗后的钻石衬底表面旋涂光刻胶，掩膜图形输入光刻机，采用光刻工艺以光刻胶作为掩模版，通过掩模在钻石表面沉积金属膜或非金属膜，去除光刻胶后形成所需要的图案，得到带有图案的钻石衬底；
四、将带有图案的钻石衬底置于等离子体化学气相沉积系统中，舱体抽真空，真空度达到5×10-6mbar，通入生长气体，其中氢气流量为196sccm，设定气压为10mbar，开启微波电源，交替提高气压与微波功率，使钻石衬底温度达到800℃，并在达到800℃后，立即通入CH4，流量为4sccm，进行外延生长，得到带有定制图案的钻石。
2.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤二将钻石衬底置于硝酸和硫酸组成的混酸溶液中，加热至200～400℃，加热时间为30～200min。
3.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤三中沉积金属膜或非金属膜的方法为磁控溅射法、热蒸发法、电子束蒸发法或原子层沉积法。
4.根据权利要求3所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤三中沉积金属膜或非金属膜的厚度为5～1000nm。
5.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤三中沉积膜的材质为Au、Pt、Ru、Pd、Au、Ru、Ti/Au、Ti/Pt/Au、Ti/Ru、Ti/Mo、Cr/Au、Cr/Ru、W、Si、SiO2、TiO2、SiN、Al2O3、Cu、Rh、Mo、Pb、Ir、W、SiC、GaN中的一种或者多种叠层膜。
6.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤四中的化学气相沉积方法为微波等离子体化学气相沉积、射频等离子体化学气相沉积、激光诱导等离子体化学气相沉积或者直流电弧等离子体子化学气相沉积。
7.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于生长气体还包括CO2、O2、N2、Ar、硼烷、磷烷中的一种或多种混合气体。
8.根据权利要求1所述的用于钻石定制图案和电极的晶体内部图形化方法，其特征在于步骤四中外延生长时间为30min～300min。
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