CN114710927A

CN114710927A - Electronic device

Info

Publication number: CN114710927A
Application number: CN202210281307.8A
Authority: CN
Inventors: 周蒙蒙
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2022-03-22
Filing date: 2022-03-22
Publication date: 2022-07-05
Anticipated expiration: 2042-03-22
Also published as: WO2023179120A9; CN114710927B; WO2023179120A1

Abstract

The embodiment of the application provides electronic equipment, relates to the technical field of heat dissipation, and can quickly reduce the heat of a chip and effectively solve the heat dissipation problem of the electronic equipment. The electronic device comprises a chip, a shape memory alloy and a heat conducting structure; the shape memory alloy is positioned on the chip, and the heat conduction structure is positioned on one side of the shape memory alloy, which is far away from the chip; the shape memory alloy includes a first form and a second form; when the shape memory alloy is in the first shape, the shape memory alloy is not in contact with the heat conducting structure; the shape memory alloy is in contact with the heat conducting structure when the shape memory alloy is in the second configuration.

Description

Electronic device

Technical Field

The application relates to an electronic device, in particular to the technical field of heat dissipation of electronic devices.

Background

With the performance of electronic devices such as mobile phones and tablet computers becoming stronger, the power consumption and the heat productivity of internal chips become higher and higher. If the heat of the chip cannot be diffused out in time, the core temperature of the chip is too high, the phenomena of frequency reduction and the like occur, and the performance of the chip is limited.

In order to solve the Heat dissipation problem of the electronic device, some Heat dissipation structures such as a vacuum Vapor Chamber (VC) and a Heat Pipe (HP) are usually disposed in the electronic device.

However, in a usage scenario with large power consumption, the existing heat dissipation structure still has difficulty in solving the heat dissipation problem of the electronic device.

Disclosure of Invention

The embodiment of the application provides electronic equipment, which comprises a chip, a shape memory alloy and a heat conducting structure; the shape memory alloy is positioned on the chip, and the heat conduction structure is positioned on one side of the shape memory alloy, which is far away from the chip; the shape memory alloy includes a first form and a second form; when the shape memory alloy is in the first shape, the shape memory alloy is not in contact with the heat conducting structure; the shape memory alloy is in contact with the heat conducting structure when the shape memory alloy is in the second configuration.

By providing a shape memory alloy on a chip that is prone to heat generation. By the aid of the shape memory alloy elastic thermal refrigeration principle, heat on the chip can be quickly absorbed, and the heat on the chip can be quickly reduced. The heat is released through the heat pipe after the shape memory alloy absorbs the heat, so that the shape memory alloy can rapidly absorb the heat again, the circulation is performed, the heat of the chip is rapidly reduced, and the heat dissipation problem of the electronic equipment is effectively solved. That is to say, by applying the shape memory alloy to the heat dissipation problem of the chip, the over-high temperature of the core of the chip can be absorbed quickly, the chip can be cooled quickly, the problem that the performance of the chip is limited due to the over-high temperature of the chip is avoided, and the chip has high commercial application value.

In some possible implementations, the shape memory alloy changes from the first form to the second form based on the absorbed heat of the chip to contact the heat conducting structure; when the shape memory alloy is in contact with the heat conducting structure, the heat conducting structure is used for releasing heat absorbed by the shape memory alloy; when the heat of the shape memory alloy is released, the shape memory alloy is restored to the first shape from the second shape, and the shape memory alloy is used for absorbing the heat around the chip. The shape memory alloy absorbs the heat of the chip and then expands to contact with the heat conducting structure, and the heat is released through the heat pipe; after the heat is released, the shape memory alloy recovers the original shape and absorbs the environmental heat, thereby achieving the effect of quick refrigeration.

In some possible implementations, there is a first gap between the shape memory alloy and the thermally conductive structure along the first direction; wherein, the first direction is the direction that the chip points to the shape memory alloy. Therefore, a deformation space (deformation and expansion under the action of thermal stress) can be reserved for the shape memory alloy, so that the chip below the shape memory alloy and the heat conduction structure above the shape memory alloy are prevented from being extruded when the shape memory alloy expands, and the chip and the heat conduction structure are protected.

In some possible implementations, the orthographic projection of the shape memory alloy on the first plane covers the orthographic projection of the chip on the first plane; the first plane is perpendicular to a first direction, and the first direction is a direction in which the chip points to the shape memory alloy. Namely, the chip is wrapped by the shape memory alloy, so that the heat of the core of the chip and the heat of the edge of the chip can be quickly absorbed.

In some possible implementations, the chip includes a core area and a rim area surrounding the core area; the orthographic projection of the shape memory alloy on the first plane is superposed with the orthographic projection of the core area of the chip on the first plane; the first plane is perpendicular to a first direction, and the first direction is a direction in which the chip points to the shape memory alloy. That is, the shape memory alloy is only disposed at the core position (with a high temperature) of the chip, that is, the shape memory alloy is disposed specifically, so that the heat at the core position of the chip is absorbed, and the cost of the mobile phone is not increased.

In some possible implementations, the chip includes a core area and a rim area surrounding the core area; the heat conducting structure comprises a central subsection, a connecting subsection surrounding the central subsection and a contact subsection surrounding the connecting subsection; the extension direction of the central portion is the same as the extension direction of the contact portions; the connection subsection connects the center subsection and the contact subsection, and the extending direction of the center subsection intersects with the extending direction of the connection subsection; the orthographic projection of the shape memory alloy on the first plane is superposed with the orthographic projection of the core area of the chip on the first plane; the orthographic projection of the contact subsection on the first plane is overlapped with the orthographic projection of the edge area of the chip on the first plane; the first plane is a plane perpendicular to the first direction, and the first direction is a direction in which the chip points to the shape memory alloy.

In some possible implementations, the shape of the shape memory alloy includes a block shape, a sheet shape, a spring shape, a wire shape, etc., and the shape memory alloy can be set by those skilled in the art according to the actual situation.

In some possible implementations, the material of the shape memory alloy includes nickel manganese indium alloy, titanium nickel alloy, or the like.

In some possible implementations, the electronic device further includes a thermal pad located between the chip and the shape memory alloy. The heat conducting pad can conduct the heat of the chip to the shape memory alloy quickly, and the chip is cooled quickly.

In some possible implementations, on the basis that the electronic device includes the thermal pad, the material of the thermal pad includes a metal material; one side of the heat conducting pad, which is far away from the chip, is locally raised to form an annular raised structure; the shape memory alloy is embedded in the annular convex structure, so that heat can be rapidly transmitted to the shape memory alloy, and meanwhile, the shape memory alloy can be fixed.

In some possible implementations, the electronic device includes a heat conducting pad, and the heat conducting pad includes a conductive cloth or a conductive rubber, so that heat can be rapidly transferred to the shape memory alloy, and the shape memory alloy can be fixed at the same time.

In some possible implementation manners, on the basis that the electronic device includes the thermal pad, the electronic device further includes a shielding cover, and the shielding cover is disposed around the chip; the shielding case comprises a shielding frame and a shielding cover; the shielding frame is arranged around the chip, and the shielding cover covers the chip; the shield cover is reused as a thermal pad. And a heat conducting pad is not required to be arranged independently, so that the light and thin design of the electronic equipment is facilitated.

In some possible implementations, the electronic device further includes a middle frame located on a side of the heat conducting structure facing away from the shape memory alloy; the middle frame is used for supporting the heat conducting structure; along a first direction, the middle frame comprises a top surface and a bottom surface, and the top surface is positioned on one side of the bottom surface, which is far away from the heat conducting structure; the bottom surface of the middle frame is also provided with shape memory alloy and is positioned between the heat conducting structure and the middle frame; the first direction is the direction in which the chip points to the shape memory alloy, so that the heat inside the electronic equipment can be further reduced.

In some possible implementations, a second gap is provided between the shape memory alloy on the middle frame and the heat conducting structure on the metal on which the shape memory alloy is also disposed on the middle frame. A deformation space (deformation and expansion under the action of thermal stress) can be reserved for the shape memory alloy on the middle frame, so that the heat conduction structure above and below the shape memory alloy and the middle frame are prevented from being extruded when the shape memory alloy expands.

In some possible implementations, the bottom surface of the middle frame is partially recessed along the first direction on the metal of the middle frame, which is also provided with the shape memory alloy, to form a first groove, and the shape memory alloy provided on the middle frame is located in the first groove. The thickness of the electronic equipment is reduced.

In some possible implementations, on the metal of the middle frame, which is also provided with the shape memory alloy, an orthographic projection of the shape memory alloy on the bottom surface on the first plane is overlapped with an orthographic projection of the chip on the first plane; the first plane is a plane perpendicular to the first direction. The arrangement can conduct and output heat near the chip, and the phenomenon that the heat is accumulated around the chip to cause higher heat of the chip is avoided.

In some possible implementations, on the metal of which the middle frame is also provided with the shape memory alloy, a heat insulation structure is provided between the shape memory alloy on the bottom surface and the middle frame. The middle frame is isolated in temperature through the heat insulation structure, and other structures on the middle frame are prevented from being damaged by high temperature.

In some possible implementations, the chip includes a system-on-chip and/or a power management chip.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.

Fig. 1 is a schematic view of an application scenario of an electronic device according to an embodiment of the present application;

fig. 2 is a schematic view of a split structure of an electronic device according to an embodiment of the present disclosure;

FIG. 3 is a cross-sectional view taken along direction BB' of FIG. 1;

FIG. 4 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 5 is a schematic diagram illustrating a phase change of a shape memory alloy according to an embodiment of the present disclosure;

FIG. 6 is a diagram illustrating a process of deformation of a shape memory alloy according to an embodiment of the present disclosure;

FIG. 7 is a schematic diagram of a top view of a shape memory alloy and SOC according to an embodiment of the present disclosure;

FIG. 8 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 9 is a schematic top view of a heat pipe and a shape memory alloy according to an embodiment of the present disclosure;

FIG. 10 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 11 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 12 is a schematic top view of another shape memory alloy and SOC provided by an embodiment of the present application;

FIG. 13 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 14 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 15 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 16 is a further cross-sectional view taken along direction BB' of FIG. 1;

fig. 17 is a schematic structural diagram of a middle frame according to an embodiment of the present application;

FIG. 18 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 19 is a further cross-sectional view taken along direction BB' of FIG. 1;

FIG. 20 is a further cross-sectional view taken along direction BB' of FIG. 1;

fig. 21 is a further sectional view in the direction BB' of fig. 1.

Reference numerals:

10-a display screen; 20-rear shell; 30-middle frame; 40-PCB; 50-a battery; 60-shape memory alloy; 70-a thermally conductive structure; 80-a heat conducting pad; 90-a shield can; 100-mobile phone; 600-a thermal insulation structure;

31-a containment cavity; 301-top surface; 302-bottom surface; 303-appearance surface; 311-cavity bottom; 312-chamber walls; 313-a first groove;

41-SOC; 42-PMIC; 411-the central region; 412-edge area;

71-center subsection; 72-a connection subsection; 73-a contact section;

81-annular raised structures; 82-a second adhesive layer;

91-a shield frame; 92-shielding cover.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The term "and/or" herein is merely an association describing an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone.

The terms "first" and "second," and the like, in the description and in the claims of the embodiments of the present application are used for distinguishing between different objects and not for describing a particular order of the objects. For example, the first target object and the second target object, etc. are specific sequences for distinguishing different target objects, rather than describing target objects.

In the embodiments of the present application, words such as "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.

In the description of the embodiments of the present application, the meaning of "a plurality" means two or more unless otherwise specified. For example, a plurality of processing units refers to two or more processing units; the plurality of systems refers to two or more systems.

The embodiment of the application provides an electronic device, and the electronic device provided by the embodiment of the application can be an electronic device containing a chip, such as a mobile phone, a computer, a tablet computer, a personal digital assistant (PDA for short), a vehicle-mounted computer, a television, an air conditioner, an intelligent wearable device, an intelligent home device and the like. The embodiment of the present application does not specifically limit the specific form of the electronic device. As shown in fig. 1, for convenience of description, the electronic device will be described as a mobile phone.

For the sake of clarity, the positional relationship of the respective structures in the mobile phone is defined in the X-axis direction, the Y-axis direction, and the Z-axis direction. The X-axis direction is the width direction of the mobile phone, the Y-axis direction is the length direction of the mobile phone, and the Z-axis direction (also called the first direction) is the thickness direction of the mobile phone.

Referring to fig. 1, a cellular phone 100 includes a display 10, a rear case 20, and a middle frame 30. The rear case 20 and the display screen 10 are disposed opposite to each other in the Z-axis direction, and the middle frame 30 is located between the rear case 20 and the display screen 10.

The Display screen 10 includes, for example, a Liquid Crystal Display (LCD) screen, an Organic Light Emitting Diode (OLED) Display screen, an LED Display screen, and the like, where the LED Display screen includes, for example, a Micro-LED Display screen, a Mini-LED Display screen, and the like. The embodiment of the present application does not limit the type of the display screen 10.

The material of the rear housing 20 may include, for example, a light-opaque material such as plastic, cellulose skin, fiberglass, etc.; and may also comprise a light transmissive material such as glass. The material of the rear case 20 is not limited in the embodiment of the present application.

Referring to fig. 2, the middle frame 30 includes a top surface 301 and a bottom surface 302 disposed opposite to each other along the Z-axis direction, and further includes a design surface 303 connecting the top surface 301 and the bottom surface 302, the design surface 303 being located on the outer side of the mobile phone 100, for example.

The middle frame 30 further comprises a receiving cavity 31, and a partial area of the bottom surface 302 is recessed along the Z-axis direction to form the receiving cavity 31, wherein the receiving cavity 31 comprises a cavity bottom 311 and an annular cavity wall 312. The receiving cavity 31 is provided therein with a Printed Circuit Board (PCB) 40, a battery 50, and the like. Along the Z-axis direction, a side of the PCB 40 facing away from the rear case 20 is provided with a System On Chip (SOC) 41, a power management chip (PMIC) 42, a memory chip, and a radio frequency chip (not shown).

To address the issue of heat dissipation from the chip, and with reference to fig. 3, the handset 100 also includes a shape memory alloy 60 on the side of the chip facing away from the PCB 40.

It should be noted that, in the embodiments of the present application, a chip is taken as SOC41, and a corresponding structural design is performed on SOC41 to solve the problem of heat dissipation of the chip.

With continued reference to fig. 3, the handset 100 further includes a heat conducting structure 70, wherein the heat conducting structure 70 is disposed between the shape memory alloy 60 and the middle frame 30. The heat conducting structure 70 is, for example, a heat pipe. The heat pipe is attached to the middle frame 30 by a first adhesive layer (not shown), such as a heat conductive gel. Along the Z-axis, the shape memory alloy 60 and the heat pipe have a first gap P1 therebetween. The orthographic projection of the heat pipe on the plane consisting of the X axis and the Y axis overlaps with the orthographic projection of the shape memory alloy 60 on the plane consisting of the X axis and the Y axis. For example, as shown in FIG. 3, the orthographic projection of the heat pipe on the plane consisting of the X-axis and the Y-axis covers the orthographic projection of the shape memory alloy 60 on the plane consisting of the X-axis and the Y-axis; alternatively, as shown in FIG. 4, the orthographic projection of the heat pipe on the plane consisting of the X-axis and the Y-axis partially overlaps with the orthographic projection of the shape memory alloy 60 on the plane consisting of the X-axis and the Y-axis.

Specifically, referring to fig. 5(1) and 6(1), at normal temperature (e.g., less than or equal to the first temperature T1), the shape memory alloy 60 is in the first state, in which the shape memory alloy 60 is not in contact with the heat conducting structure 70 (e.g., a heat pipe), and the shape memory alloy 60 is in an austenitic state (parent phase state). When the SOC41 is operated, heat is generated, and the SOC41 generates heat. Referring to fig. 5(2) and 6(1), the shape memory alloy 60 is in contact with the SOC41, the shape memory alloy 60 rapidly absorbs the heat generated by the SOC41, and the temperature inside the shape memory alloy 60 increases, for example, at the second temperature T2. Referring to fig. 5(3) and to fig. 6(2), when the temperature of the shape memory alloy 60 is raised to the third temperature T3 (the first transformation temperature), the shape memory alloy 60 is transformed from the austenite phase to the martensite phase under the action of the thermal stress, and the shape memory alloy 60 is deformed and expanded under the action of the thermal stress to contact the heat pipe, and at this time, the shape memory alloy 60 is in the second form, i.e., the form when the shape memory alloy 60 contacts the heat pipe is in the second form. When the shape memory alloy 60 contacts the heat pipe, the shape memory alloy 60 transfers heat to the heat pipe, and the heat pipe dissipates heat to the heat dissipation area of the mobile phone. Referring to fig. 5(4) and to fig. 6(2), the temperature of the shape memory alloy 60 decreases, such as to a second temperature T2, due to the transfer of heat to the heat pipe during the process of the shape memory alloy 60. The thermal stress is released while the internal temperature of the shape memory alloy 60 is decreased. Referring to fig. 5(1) and fig. 6(1), when the temperature of the shape memory alloy 60 drops below the first temperature T1 (the second transformation temperature), the shape memory alloy 60 returns to the original shape due to the release of the thermal stress, i.e. the shape memory alloy 60 changes from the second shape to the first shape, and in the process, the reverse martensite elastic phase transformation (transformation from the martensite phase to the austenite phase) occurs, and at this time, the heat in the internal environment of the mobile phone can be absorbed, so as to achieve the effect of rapid cooling.

It should be noted that, as for the process and principle of the heat pipe dissipating heat to the heat dissipating area of the mobile phone and the structure of the heat pipe, reference may be made to the technical solution in the prior art embodiment, which is not described in detail in the embodiment of the present application.

In the embodiment of the present application, the shape memory alloy 60 is provided on a chip (for example, SOC41, power management chip 42, or the like) that easily generates heat. By adopting the elastic-thermal refrigeration principle of the shape memory alloy 60, the heat on the chip can be quickly absorbed, so that the heat on the chip is quickly reduced. The heat is released through the heat pipe after the shape memory alloy 60 absorbs the heat, so that the shape memory alloy 60 can rapidly absorb the heat again, the circulation is performed, the heat of the chip is rapidly reduced, and the heat dissipation problem of the electronic equipment is effectively solved. That is to say, by applying the shape memory alloy 60 to the heat dissipation problem of the chip, the excessively high temperature of the core of the chip can be quickly absorbed, the chip can be quickly cooled, the problem that the performance of the chip is limited due to the excessively high temperature of the chip is avoided, and the chip has a high commercial application value. In addition, by providing the first gap P1 between the shape memory alloy 60 and the heat pipe, a deformation space (deformation expansion under thermal stress) is left for the shape memory alloy 60, so that when the shape memory alloy 60 expands, the SOC41 below the shape memory alloy and the heat pipe above the shape memory alloy are prevented from being pressed, and the SOC41 and the heat pipe are protected.

Note that, regarding the height of the first gap P1 along the Z-axis direction, the height of the first gap P1 is not limited in the embodiments of the present application, and those skilled in the art can set the height according to the amount of heat generated during the operation of the chip, the amount of deformation of the shape memory alloy 60 based on the amount of heat generated during the operation of the chip, and the like, as long as the SOC41 is not pressed and the heat pipe can be contacted.

As for the material of the shape memory alloy 60, the material of the shape memory alloy 60 is not limited in the embodiment of the present application. Exemplary materials for the shape memory alloy 60 include, for example, nickel manganese indium alloy or titanium nickel alloy. When the shape memory alloy 60 is made of nickel-manganese-indium alloy or titanium-nickel alloy, the proportional relationship (alloy ratio) of the alloys may be selected according to actual conditions such as heat generated during the operation of the chip (the heat may affect the performance of the chip), and the like, which is not limited in the embodiment of the present application.

For the position of the shape memory alloy 60 on the chip, the position of the shape memory alloy 60 on the chip is not limited in the embodiment of the present application, as long as the heat of the chip can be quickly absorbed.

In one possible implementation, referring to fig. 3 and 7, the SOC41 includes a core region 411 and a rim region 412 surrounding the core region 411. The core area 411 has a greater heat than the rim area 412. The orthographic projection of the shape memory alloy 60 on the plane consisting of the X-axis and the Y-axis coincides with the orthographic projection of the core area 411 on the plane consisting of the X-axis and the Y-axis.

That is, the shape memory alloy 60 is disposed only at the core position of the chip (the temperature is high), that is, the shape memory alloy 60 is disposed specifically, so that the heat at the core position of the chip is absorbed, and the cost of the mobile phone is not increased.

It should be noted that the core position of the chip includes, but is not limited to, a central position. The embodiments of the present application all take the core position of the chip at the center position as an example for explanation.

In yet another possible implementation, referring to fig. 8 and 9, the SOC41 includes a core region 411 and a rim region 412 surrounding the core region 411. The core area 411 has a greater heat than the rim area 412. The orthographic projection of the shape memory alloy 60 on the plane consisting of the X-axis and the Y-axis coincides with the orthographic projection of the core area 411 on the plane consisting of the X-axis and the Y-axis. The heat pipe comprises a central portion 71, a connection portion 72 surrounding the central portion 71 and a contact portion 73 surrounding the connection portion. The central section 71 is connected to the middle frame by a first adhesive layer. The contact sections 73 are in contact with the edge area 412 of the chip, and the connection sections 72 connect the center section 71 and the contact sections 73. That is, the shape memory alloy 60 is disposed at the core position (where the temperature is higher) of the chip, the heat of the chip is rapidly absorbed by the shape memory alloy 60, and the heat pipe is disposed at the edge region of the chip, and the heat around the chip (where the heat is lower than the temperature of the core region) is absorbed by the heat pipe.

In yet another possible implementation, referring to FIG. 10, an orthographic projection of the shape memory alloy 60 on the plane of the X-axis and the Y-axis covers an orthographic projection of the SOC41 on the plane of the X-axis and the Y-axis. With this arrangement, the heat of the core and the heat of the edge of the SOC41 can be absorbed quickly.

In the following embodiments, the shape memory alloy 60 is provided at the core position of the SOC41 as an example.

Regarding the shape of the shape memory alloy 60, the shape of the shape memory alloy 60 is not limited in the embodiments of the present application, and can be set by those skilled in the art according to the actual situation. Illustratively, the shape of the shape memory alloy 60 may include, for example, a block shape (as shown in FIG. 3), a sheet shape (as shown in FIG. 11), a wire shape (as shown in FIG. 12), a spring shape (as shown in FIG. 13), or the like. When the shape memory alloy 60 is in the shape of a spring, the spring shape has a certain deformation space, so that the heat conducting structure 70 and the like can be further prevented from being damaged when the shape memory alloy 60 expands due to heat.

In addition, in order to rapidly transfer the heat of the chip to the shape memory alloy 60. Referring to fig. 14, a thermal pad 80 is also disposed between the SOC41 and the shape memory alloy 60. The heat of the SOC41 is rapidly conducted to the shape memory alloy 60 through the thermal pad 80, which is beneficial to rapidly cooling the SOC 41.

As for the type of the thermal pad 80, the embodiment of the present application does not limit the type of the thermal pad 80 as long as the heat of the chip can be rapidly conducted to the shape memory alloy 60.

In one possible implementation, the thermal pad 80 includes a metal material, such as copper foil, which has excellent thermal conductivity and has electromagnetic shielding and antistatic effects. When the thermal pad 80 is a copper foil, it may include, for example, a self-adhesive copper foil, a double-conductive copper foil, a single-conductive copper foil, or the like.

In this case, in order to dispose the shape memory alloy 60 on the thermal pad 80, with continued reference to fig. 14, the thermal pad 80 is formed with an annular projection structure 81, and the annular projection structure 81 is integrally formed with the thermal pad 80. The shape memory alloy 60 is embedded in the annular protrusion structure 81 to fix the shape memory alloy 60 by the annular protrusion structure 81. When the shape memory alloy 60 is heated and expands in the X-axis direction and/or the Y-axis direction, it can form an interference fit with the annular protrusion structure 81, so that the shape memory alloy 60 can be more firmly fixed on the thermal pad 80.

Of course, the manner of disposing the shape memory alloy 60 on the thermal pad 80 is not limited thereto. Referring to fig. 15, a second adhesive layer 82 may also be disposed between the thermal pad 80 and the shape memory alloy 60. The shape memory alloy 60 is secured to the thermal pad 80 by a second adhesive layer 82. The material of the second adhesive layer 82 is not limited in the embodiment of the present application, as long as the shape memory alloy 60 can be fixed to the thermal pad 80 without affecting the heat transfer. Illustratively, the second adhesive layer 82 may include, for example, a back adhesive or the like.

In yet another possible implementation, the thermal pad 80 includes a conductive cloth or a conductive rubber. The conductive cloth material is prepared by firstly chemically depositing or physically transferring metal nickel onto polyester fibers, then plating a copper layer with high conductivity on the nickel, and then plating nickel metal for preventing an oxidation machine from corrosion on the copper layer, wherein the combination of the copper and the nickel provides excellent conductivity and good electromagnetic shielding effect, and the shielding range is 100K-3 GHz. The conductive rubber is prepared by uniformly distributing conductive particles such as silver-plated glass, silver-plated aluminum, silver and the like in silicone rubber, and enabling the conductive particles to be contacted through pressure so as to achieve good conductive performance. Its main function is sealing and electromagnetic shielding. The product can be molded or extruded, and can be made into sheets or other die-cut shapes. The shielding performance is as high as 120dB (10 GHz).

When the thermal pad 80 includes a conductive cloth or a conductive rubber, it is possible to bond the shape memory alloy 60 to the SOC41 without providing a separate bonding layer, while it is possible to rapidly conduct the heat of the SOC41 to the shape memory alloy 60.

In the following embodiments, the heat conductive pad 80 is made of a metal material, the annular protrusion structure 81 is formed on the heat conductive pad 80, and the shape memory alloy 60 is fixed by the annular protrusion structure 81.

In addition, referring to fig. 16, the mobile phone 100 further includes a shield cover 90, and the shield cover 90 is disposed on the PCB and forms a shield space together with the PCB 40. The SOC41 is accommodated in the shield space. The SOC41 is electromagnetically shielded by the shield can 90.

The shield cover 90 includes a shield frame 91 and a shield cover 92, the shield frame 91 is disposed around the SOC41, and the shield cover 92 is disposed on a side of the shield frame 91 facing away from the PCB 40.

The material of the shield case 90 includes, for example, a metal material such as copper foil. At this time, the shield cover 92 is reused as the thermal pad 80. That is, the shielding cover 92 may be used as a part of the shielding cover 91 to electromagnetically shield the SOC41 by utilizing the excellent thermal conductivity and electromagnetic shielding performance of the copper foil; and also quickly conduct the heat of the SOC41 to the shape memory alloy 60. Thus, the thermal pad 80 need not be separately provided. Which is beneficial to the light and thin design of the mobile phone 100.

In addition, the heat inside the mobile phone is further reduced. Referring to fig. 17, at least a partial region of the cavity bottom 311 of the receiving cavity 31 is also provided with the shape memory alloy 60. Referring to FIG. 18, a second gap P2 is formed between the shape memory alloy 60 disposed on the cavity bottom 311 and the heat pipe along the Z-axis direction. When the heat inside the mobile phone 100 is high due to the structure of the chip, the battery, etc., the heat can be transferred to the heat pipe through the shape memory alloy 60 disposed on the cavity bottom 311. The specific transmission principle is similar to that when the shape memory alloy 60 is disposed on the chip, and the above explanation can be specifically referred to, and the details are not repeated herein.

That is, by disposing the shape memory alloy 60 on the chip and on the middle frame 30, not only the heat generated by the chip can be transmitted, but also the heat around the chip can be transmitted, so that the heat generation amount and the energy consumption of the chip can be reduced significantly.

It should be noted that, the position of the shape memory alloy 60 on the cavity bottom 311 is not limited in the embodiment of the present application, and a person skilled in the art can set the position of the shape memory alloy 60 according to actual needs.

In one possible implementation, with continued reference to FIG. 18, the orthographic projection of the shape memory alloy 60 disposed on the cavity bottom 31 on the plane of the X-axis and the Y-axis overlaps with the orthographic projection of the SOC41 on the plane of the X-axis and the Y-axis. For example, as shown in fig. 18, an orthographic projection of the shape memory alloy 60 provided on the cavity bottom 31 on the plane composed of the X axis and the Y axis is located within an orthographic projection of the SOC41 on the plane composed of the X axis and the Y axis; alternatively, as shown in fig. 19, the orthographic projection of the shape memory alloy 60 disposed on the cavity bottom 311 on the plane composed of the X axis and the Y axis partially overlaps the orthographic projection of the SOC41 on the plane composed of the X axis and the Y axis. That is, the shape memory alloy 60 is located in the vicinity of the SOC 41.

The arrangement can conduct and output heat near the chip, and the phenomenon that the heat is accumulated around the chip to cause higher heat of the chip is avoided.

In order to reduce the thickness of the handset 100 in the Z-axis direction, referring to fig. 20, the receiving cavity 31 further includes a first groove 313. The first groove 313 is recessed from the cavity bottom 311 in the Z-axis direction. The shape memory alloy 60 disposed on the cavity bottom 31 is located in the first groove 313.

It is contemplated that the middle frame 30 supports most of the structure within the cell phone 100, i.e., most of the structure is in contact with the middle frame 30. If the shape memory alloy 60 is provided on the middle frame 30, the absorbed heat may be transferred to the middle frame 30, thereby affecting the structure of the middle frame 30. Therefore, in order to prevent the heat absorbed by the shape memory alloy 60 from being transmitted to the middle frame 30, referring to fig. 21, a heat insulation structure 600 is further provided between the middle frame 30 and the shape memory alloy 60. The heat insulation structure 600 isolates the temperature of the middle frame 30, thereby preventing other structures on the middle frame 30 from being damaged by high temperature.

As for the material of the heat insulation structure 600, the material of the heat insulation structure 600 is not limited in the embodiments of the present application as long as the heat absorbed by the shape memory alloy 60 can be prevented from being transmitted to the middle frame 30. For example, the material of the thermal insulation structure 600 may be aerogel or other materials with high temperature insulation.

The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An electronic device, comprising: the chip, the shape memory alloy and the heat conducting structure;

the shape memory alloy is positioned on the chip, and the heat conduction structure is positioned on one side of the shape memory alloy, which is far away from the chip;

the shape memory alloy includes a first form and a second form;

when the shape memory alloy is in the first state, the shape memory alloy is not in contact with the heat conducting structure;

the shape memory alloy is in contact with the heat conducting structure when the shape memory alloy is in the second configuration.

2. The electronic device of claim 1, wherein the shape memory alloy changes from the first form to the second form to contact the thermally conductive structure based on the absorbed heat of the chip;

the heat conducting structure is used for releasing the heat absorbed by the shape memory alloy when the shape memory alloy is in contact with the heat conducting structure;

when the heat of the shape memory alloy is released, the shape memory alloy is restored to the first shape from the second shape, and the shape memory alloy is used for absorbing the heat around the chip.

3. The electronic device of claim 1, wherein, in a first direction, there is a first gap between the shape memory alloy and the thermally conductive structure;

wherein the first direction is a direction in which the chip points to the shape memory alloy.

4. The electronic device of claim 1, wherein an orthographic projection of the shape memory alloy on a first plane covers an orthographic projection of the chip on the first plane;

the first plane is perpendicular to a first direction, and the first direction is a direction in which the chip points to the shape memory alloy.

5. The electronic device of claim 1, wherein the chip comprises a core area and a rim area surrounding the core area;

the orthographic projection of the shape memory alloy on a first plane is coincident with the orthographic projection of the core area of the chip on the first plane;

6. The electronic device of claim 1, wherein the chip comprises a core area and a rim area surrounding the core area;

the thermally conductive structure includes a central section, a connection section surrounding the central section, and a contact section surrounding the connection section; the extension direction of the central portion is the same as the extension direction of the contact portions; the connection section connects the center section and the contact section, and an extending direction of the center section intersects an extending direction of the connection section;

the orthographic projection of the shape memory alloy on a first plane is coincident with the orthographic projection of the core area of the chip on the first plane; the orthographic projection of the contact subsection on a first plane is overlapped with the orthographic projection of the edge area of the chip on the first plane;

the first plane is a plane perpendicular to a first direction, and the first direction is a direction in which the chip points to the shape memory alloy.

7. The electronic device of any of claims 1-6, wherein the shape of the shape memory alloy comprises a block, a sheet, a spring, or a wire.

8. The electronic device of any of claims 1-6, wherein the material of the shape memory alloy comprises a nickel manganese indium alloy or a titanium nickel alloy.

9. The electronic device of claim 1, further comprising a thermal pad between the chip and the shape memory alloy.

10. The electronic device of claim 9, wherein the material of the thermal pad comprises a metallic material;

one side of the heat conducting pad, which is far away from the chip, is locally raised to form an annular raised structure;

the shape memory alloy is embedded in the annular convex structure.

11. The electronic device of claim 9, wherein the thermal pad comprises a conductive cloth or a conductive rubber.

12. The electronic device of claim 9, further comprising a shield can disposed around the chip; the shielding case comprises a shielding frame and a shielding cover; the shielding frame is arranged around the chip, and the shielding cover covers the chip;

the shielding cover is reused as the thermal pad.

13. The electronic device of claim 1, further comprising a bezel on a side of the heat-conducting structure facing away from the shape memory alloy;

the middle frame is used for supporting the heat conducting structure;

along a first direction, the middle frame comprises a top surface and a bottom surface, and the top surface is positioned on one side of the bottom surface, which is far away from the heat conducting structure;

the bottom surface of the middle frame is also provided with a shape memory alloy and is positioned between the heat conducting structure and the middle frame;

14. The electronic device of claim 13, wherein a second gap is located between the shape memory alloy on the middle frame and the heat conducting structure.

15. The electronic device according to claim 13, wherein a bottom surface of the middle frame is partially recessed in the first direction to form a first groove, and the shape memory alloy provided on the middle frame is located in the first groove.

16. The electronic device of claim 13, wherein an orthographic projection of the shape memory alloy on the bottom surface on a first plane overlaps with an orthographic projection of the chip on the first plane;

wherein the first plane is a plane perpendicular to the first direction.

17. The electronic device of claim 13, wherein a thermal insulation structure is disposed between the shape memory alloy on the bottom surface and the middle frame.

18. The electronic device of claim 1, wherein the chip comprises a system-on-chip and/or a power management chip.