CN114710126A - Reconfigurable broadband amplifier based on GaAs Bi-HEMT technology - Google Patents
Reconfigurable broadband amplifier based on GaAs Bi-HEMT technology Download PDFInfo
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
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Abstract
The invention discloses a reconfigurable broadband amplifier based on a GaAs Bi-HEMT (gallium arsenide Bi-high electron mobility transistor) process, which belongs to the technical field of integrated circuits and comprises a frequency band selectable input matching network, a self-adaptive bias feed network, a PD (differential power) control unit and a novel distributed amplification network. The invention adopts a Bi-HEMT process, and HBT and pHEMT are integrated in a single chip, thereby realizing the optimized chip performance; secondly, the circuit has reconfigurable characteristics, realizes the electrical performance of a multi-band selectable and dynamic control circuit, can simultaneously realize the characteristics of ultra wide band, high gain, high linearity, high output power, lower power consumption and lower noise, and has good circuit reliability; finally, the circuit of the invention has the characteristics of temperature stability and self-adaptive linearization.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process.
Background
In the semiconductor industry, reconfigurable chips are gradually emerging due to their advantages such as flexibility and resource reusability. A number of VGA chips with adjustable gain are available on the market, but in the disclosed topology, it is not uncommon for MMIC amplifier chips to be adjustable both in frequency band and electrical performance.
For traditional amplifier design, the same process device is often used for multiple transistors in a chip, and each process has unique and excellent performance: the pHEMT process has excellent low noise characteristics and excellent power performance due to high electron mobility, but has the disadvantage of poor linearity; the HBT process has high transconductance, excellent current amplification capability and ideal linearity, but has the disadvantages of poor noise characteristics and self-heating effect. Therefore, when a circuit is designed by adopting a single process, the characteristics of high gain, high linearity, low noise, ideal power output and the like are difficult to be considered simultaneously.
As above, due to the poor thermal conductivity of GaAs material, HBT transistors generate a large amount of heat when operating in high power mode, and the heat is not dissipated in time, which may cause the performance of the transistor to deteriorate, and bring a great challenge to the reliability design of the amplifier, which is the self-heating effect of GaAs HBT transistors. It would be beneficial to the performance output and reliability of the amplifier if a method could be found to suppress the self-heating effect, making the temperature of the circuit relatively stable.
Disclosure of Invention
In order to solve the problems, the invention provides a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process.
The technical scheme of the invention is as follows: a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process comprises a frequency band selectable input matching network, a self-adaptive bias feed network, a PD control unit and a novel distributed amplification network;
the frequency band selectable input matching network is used as the input end of the reconfigurable broadband amplifier, and the output end of the reconfigurable broadband amplifier is connected with the first input end of the novel distributed amplification network;
the output end of the novel distributed amplification network is used as the output end of the reconfigurable broadband amplifier;
the first output end of the self-adaptive bias feed network is connected with the input end of the PD control unit, and the second output end of the self-adaptive bias feed network is connected with the second input end of the novel distributed amplification network;
the first output end of the PD control unit is connected with the third input end of the novel distributed amplification network; the second output end of the PD control unit is connected with the fourth input end of the novel distributed amplification network; and a third output end of the PD control unit is connected with a fifth input end of the novel distributed amplification network.
Further, the frequency band selectable input matching network comprises a resistor R15, a resistor R16, a resistor R17, a capacitor C1, a capacitor C32, a capacitor C33, an inductor L30, an inductor L31, a grounded inductor L32, a grounded inductor L33, a grounded inductor L34, a microstrip line TL1, a microstrip line TL2, a switch tube M7, a switch tube M8 and a switch tube M9;
one end of the capacitor C1 is used as an input end of the frequency band selectable input matching network, and the other end of the capacitor C1 is connected with one end of the microstrip line TL 1; the other end of the microstrip line TL1 is connected to the drain of the switching tube M7, one end of the inductor L30, and one end of the capacitor C32, respectively; the grid of the switch tube M7 is connected with one end of the resistor R15; the other end of the resistor R15 is connected with a control voltage Vfcon 1; the source of the switching tube M7 is connected with the grounding inductor L32; the other end of the inductor L30 is connected with the other end of the capacitor C32, one end of the inductor L31, one end of the capacitor C33 and the drain of the switching tube M8 respectively; the grid of the switch tube M8 is connected with one end of the resistor R16; the other end of the resistor R16 is connected with a control voltage Vfcon 2; the source of the switching tube M8 is connected with the grounding inductor L33; the other end of the inductor L31 is connected with the other end of the capacitor C33, one end of the microstrip line TL2 and the drain electrode of the switch tube M9 respectively; the grid of the switch tube M9 is connected with one end of the resistor R17; the other end of the resistor R17 is connected with a control voltage Vfcon 3; the source of the switching tube M9 is connected with the grounding inductor L34; the other end of the microstrip line TL2 is used as the output end of the frequency band selectable input matching network.
The beneficial effects of the further scheme are as follows: in the present invention, the inventive circuit employs an innovative input match that integrates the multi-band selectable feature. The on-off states of the switching tubes M7-M9 are respectively controlled by control voltages Vfcon1, Vfcon2 and Vfcon3, so that related frequency band signals can pass through an inductor L30, a capacitor C32, an inductor L31 and a capacitor C32, and part of signals pass through an inductor L32 or an inductor L33 or an inductor L34 to the ground, and the on states of the switching tubes M7-M9 are selectable, so that the passing frequency band of radio frequency signals is adjusted, and multi-band selection is realized. During design, the switching tubes M7-M9 are switched on and off and participate in impedance matching of the circuit by combining capacitance and inductance, so that the frequency reconfigurable characteristic of the circuit is realized on the premise of meeting better input standing waves.
Further, the adaptive bias feed network comprises a resistor R9, a resistor R11, a ground resistor R12, a resistor R13, a resistor R14, a ground capacitor C27, a capacitor C28, a ground capacitor C30, an inductor L29, a triode H13, a triode H14 and a triode H15;
the base electrode of the triode H13 is respectively connected with one end of the resistor R11, the collector electrode of the triode H14, one end of the resistor R13 and the grounding capacitor C27; an emitter of the triode H13 is respectively connected with one end of the capacitor C28 and one end of the resistor R14; the other end of the capacitor C28 is used as a first output end of the self-adaptive bias feed network and is connected with the other end of the resistor R14; the collector of the triode H13 is respectively connected with the other end of the resistor R11, one end of the resistor R9, one end of the inductor L29 and the power supply feed VD; the other end of the resistor R9 is connected with a grounding capacitor C30; the base electrode of the triode H14 is connected with the other end of the resistor R13; the emitter of the triode H14 is respectively connected with the base of the triode H15 and the collector of the triode H15; the emitter of the triode H15 is connected with the grounding resistor R12; the other end of the inductor L29 serves as a second output terminal of the adaptive bias feed network.
The beneficial effects of the further scheme are as follows: in the invention, the circuit adopts a linearized adaptive bias circuit with stable temperature and controllable impedance:
firstly, the method comprises the following steps: the base bias current of the triodes (H1-H12) in the novel distributed amplification network is provided by a current mirror consisting of the triode H13 and the triode H14. The magnitude of the bias current is controlled by resistor R11, and a diode-like transistor H15 is added to stabilize the base dc level of transistor H13. The linearizer consists of a triode H13 and a bypass capacitor C27, and when the input power is increased, the linearizer provides increased base bias and collector current, so that the bias point of the triodes (H1-H12) is adjusted and changed along with the input signal power. When the temperature changes, the resistor R12, the resistor R13 and the resistor R14 regulate the current in the transistor H13 and the transistor H14, for example, when the temperature rises, the current in the transistor H13 and the transistor H14 is restrained due to the functions of the resistor R12, the resistor R13 and the resistor R14, so that the self-heating effect of the HBT triode is restrained to a certain degree, and the temperature is stabilized. Because the resistor R14 increases the bias impedance, the linearization effect is reduced, and the bypass capacitor C28 is added to be connected with the resistor R14 in parallel, the linearization and the temperature stabilization can be realized at the same time.
Secondly, the method comprises the following steps: the pHEMT transistors M1-M6 adopt a self-bias structure, the self-bias structure is formed by connecting a resistor (R1-R6) and a capacitor (C2-C7) to the ground in parallel, and when the temperature of the structure rises, the current in the pHEMT transistors is adjusted by the resistor, and then the grid voltage of a field effect transistor is adjusted, so that the bias has a certain temperature stabilizing function.
Further, the novel distributed amplifying network includes a ground resistor R1, a ground resistor R2, a ground resistor R3, a ground resistor R4, a ground resistor R5, a ground resistor R6, a ground capacitor C6, a ground inductor L6, a ground capacitor C6, a ground inductor C6, a ground capacitor C6, a ground inductor L6, a inductor L6, a capacitor C6, a inductor L6, a capacitor C6, a inductor L, a capacitor C6, a inductor L, a capacitor C6, a inductor L, a capacitor C6, a inductor L, a capacitor C6, a inductor L, a capacitor C6, a capacitor, Inductor L12, inductor L13, inductor L14, inductor L15, inductor L16, inductor L17, inductor L18, inductor L19, inductor L20, inductor L21, inductor L22, inductor L23, inductor L24, inductor L25, inductor L26, inductor L27, inductor L28, microstrip line TL3, microstrip line TL4, microstrip line TL5, microstrip line TL6, microstrip line TL7, field effect transistor M1, field effect transistor M2, field effect transistor M3, field effect transistor M4, field effect transistor M5, field effect transistor M6, transistor H1, transistor H2, transistor H3, transistor H4, transistor H5, transistor H6, transistor H7, transistor H8, transistor H9, transistor H10, transistor H11, and transistor H12;
the grid electrode of the field effect transistor M1 is used as a first input end of the novel distributed amplification network and is connected with one end of the inductor L1; the source electrode of the field effect transistor M1 is respectively connected with a grounding capacitor C2 and a grounding resistor R1; the drain electrode of the field effect transistor M1 is respectively connected with one end of the capacitor C8 and one end of the inductor L6; the other end of the capacitor C8 is used as a third input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL3, the base electrode of the triode H1 and the base electrode of the triode H2; the collector of the triode H2 is respectively connected with one end of the inductor L12 and the collector of the triode H1; the emitter of the triode H1 is respectively connected with the emitter of the triode H2, the other end of the inductor L6 and the grounding capacitor C14; the other end of the inductor L12 is connected with one end of an inductor L18, one end of an inductor L24 and one end of a microstrip line TL6 respectively; the other end of the inductor L18 is connected with a grounding capacitor C21; the other end of the microstrip line TL6 is used as a second input end of the novel distributed amplification network and is connected with one end of a resistor R10; the other end of the resistor R10 is connected with a grounding capacitor C29;
the grid electrode of the field effect transistor M2 is respectively connected with the other end of the inductor L1 and one end of the inductor L2; the source electrode of the field effect transistor M2 is respectively connected with a grounding capacitor C3 and a grounding resistor R2; the drain electrode of the field effect transistor M2 is respectively connected with one end of the capacitor C9 and one end of the inductor L7; the other end of the capacitor C9 is respectively connected with the other end of the microstrip line TL3, the base electrode of the triode H3 and the base electrode of the triode H4; the collector of the triode H4 is connected with one end of the inductor L13 and the collector of the triode H3 respectively; the emitter of the triode H3 is respectively connected with the emitter of the triode H4, the other end of the inductor L7 and the grounding capacitor C15; the other end of the inductor L13 is connected with one end of the inductor L19, the other end of the inductor L24 and one end of the inductor L25 respectively; the other end of the inductor L19 is connected with a grounding capacitor C22;
the grid of the field effect transistor M3 is respectively connected with the other end of the inductor L2 and one end of the inductor L3; the source electrode of the field effect transistor M3 is respectively connected with a grounding capacitor C4 and a grounding resistor R3; the drain electrode of the field effect transistor M3 is respectively connected with one end of the capacitor C10 and one end of the inductor L8; the other end of the capacitor C10 is used as a fourth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL4, the base electrode of the triode H5 and the base electrode of the triode H6; the collector of the triode H6 is respectively connected with one end of the inductor L14 and the collector of the triode H5; the emitter of the triode H5 is respectively connected with the emitter of the triode H6, the other end of the inductor L8 and the grounding capacitor C16; the other end of the inductor L14 is connected with one end of the inductor L20, the other end of the inductor L25 and one end of the inductor L26 respectively; the other end of the inductor L20 is connected with a grounding capacitor C23;
the grid of the field effect transistor M4 is respectively connected with the other end of the inductor L3 and one end of the inductor L4; the source electrode of the field effect transistor M4 is respectively connected with a grounding capacitor C5 and a grounding resistor R4; the drain electrode of the field effect transistor M4 is respectively connected with one end of the capacitor C11 and one end of the inductor L9; the other end of the capacitor C11 is respectively connected with the other end of the microstrip line TL4, the base electrode of the triode H7 and the base electrode of the triode H8; the collector of the triode H8 is respectively connected with one end of the inductor L15 and the collector of the triode H7; the emitter of the triode H7 is respectively connected with the emitter of the triode H8, the other end of the inductor L9 and the grounding capacitor C17; the other end of the inductor L15 is connected with one end of the inductor L21, the other end of the inductor L26 and one end of the inductor L27 respectively; the other end of the inductor L21 is connected with a grounding capacitor C24;
the grid of the field effect transistor M5 is respectively connected with the other end of the inductor L4 and one end of the inductor L5; the source electrode of the field effect transistor M5 is respectively connected with a grounding capacitor C6 and a grounding resistor R5; the drain electrode of the field effect transistor M5 is respectively connected with one end of the capacitor C12 and one end of the inductor L10; the other end of the capacitor C12 is used as a fifth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL5, the base electrode of the triode H9 and the base electrode of the triode H10; the collector of the triode H10 is connected with one end of the inductor L16 and the collector of the triode H9 respectively; the emitter of the triode H9 is respectively connected with the emitter of the triode H10, the other end of the inductor L10 and the grounding capacitor C18; the other end of the inductor L16 is connected with one end of the inductor L22, the other end of the inductor L27 and one end of the inductor L28 respectively; the other end of the inductor L22 is connected with a grounding capacitor C25;
the grid of the field effect transistor M6 is respectively connected with the other end of the inductor L5, one end of the grounding resistor R7 and one end of the resistor R8; the other end of the resistor R8 is connected with a grounding capacitor C20; the source electrode of the field effect transistor M6 is respectively connected with a grounding capacitor C7 and a grounding resistor R6; the drain electrode of the field effect transistor M6 is respectively connected with one end of the capacitor C13 and one end of the inductor L11; the other end of the capacitor C13 is respectively connected with the other end of the microstrip line TL5, the base electrode of the triode H11 and the base electrode of the triode H12; the collector of the triode H12 is respectively connected with one end of the inductor L17 and the collector of the triode H11; the emitter of the triode H11 is respectively connected with the emitter of the triode H12, the other end of the inductor L11 and the grounding capacitor C19; the other end of the inductor L17 is connected with one end of an inductor L23, the other end of an inductor L28 and one end of a microstrip line TL7 respectively; the other end of the inductor L23 is connected with a grounding capacitor C26; the other end of the microstrip line TL7 is connected with one end of a capacitor C31; the other end of the capacitor C31 is used as the output end of the novel distributed amplification network.
The beneficial effects of the further scheme are as follows: in the invention, a novel distributed amplifying network is adopted, and a current multiplexing structure is embedded in a distributed structure by the novel distributed amplifying network. The distributed structure is composed of 6 subunits, and each subunit is a current multiplexing structure. pHEMT transistors are used as M1-M6, and HBT transistors are used as H1-H12. The field effect transistors M1-M6 adopt a self-bias structure, gate bias voltage can be changed by adjusting the sizes of resistors R1-R6, the gates of the field effect transistors M1-M6 are grounded through the resistor R7, and the drain voltage of the field effect transistors M1-M6 is provided through the emitters of the HBT transistors in each subunit through inductors (L6-L11); the current flowing through the pHEMT transistor in each subunit simultaneously flows through the HBT transistor, so that the power consumption of the circuit is reduced, but radio-frequency signals reach the HBT transistor through the pHEMT transistor for amplification, for example, the radio-frequency signals are amplified by M1 and then pass through a capacitor C8 to be amplified continuously to a triode H1 and a triode H2, so that high gain and low power consumption are realized; the pHEMT transistor has a low noise coefficient and a high input impedance, so the pHEMT transistor is used for a front stage, the HBT transistor has high linearity and good current driving capability, so the pHEMT transistor is used for a final stage, and in consideration of the self-heating benefit problem of the HBT transistor, two identical HBT transistors are adopted in each sub-unit to synthesize and replace one large-area HBT transistor, so that the output power and the linearity are improved, and the reliability of a circuit is improved.
The triodes H1-H12 adopt a novel linear self-adaptive biasing circuit, high linearity characteristics of stable temperature and controllable impedance are realized, meanwhile, the bias of the 6 subunits is controllable in two ways through the PD control unit, so that the working states of the subunits are selectable in two ways, the changes of circuit gain, output power, linearity and power consumption, even working bandwidth and the like are realized, and the reconfiguration of the circuit is realized. Different from the traditional distributed amplifier which performs output impedance matching after each subunit is synthesized, the output end of each subunit of the novel distributed amplifier circuit performs output matching firstly, and an inductor and a capacitor are connected in parallel to the ground after the inductor is connected in series, such as the inductor L12, the inductor L18 and the capacitor C21, so that the purpose is firstly to adjust the phase delay, the in-band harmonic component can be inhibited, and good linearity is realized; secondly, impedance matching is integrated in the sub-units as much as possible, and the reconfigurable characteristic of the circuit can be better realized.
The radio frequency input end of each stage of distributed subunit is connected with the inductor L1-L5, and the radio frequency output end of each stage of subunit is connected with the inductor L24-L28. The current multiplexing structure mode of the subunit has good broadband characteristics, and the whole circuit has very wide working bandwidth and excellent standing waves by combining a distributed structure.
The beneficial effects of the invention are:
(1) the invention adopts a Bi-HEMT process. The process integrates HBT and pHEMT in a single chip, so that the design is more flexible and innovative. The process has the characteristics of high input impedance, low noise, good thermal stability and the like of the pHEMT device, and can also exert the advantages of high linearity, high transconductance, strong current driving capability and the like of the HBT device. By adopting the Bi-HEMT technology, the radio frequency performance required by the circuit can be matched by selecting a proper device, so that the optimized chip performance is realized;
(2) the circuit has reconfigurable characteristics. Firstly, the circuit adopts an innovative input matching network, and the matching network simultaneously realizes input impedance matching and multi-band selectable characteristics; secondly, the working states of every two subunits of the distributed structure of the circuit are controllable, and each subunit is integrated with respective output matching and phase delay adjustment, so that the gain, power, linearity and power consumption of the circuit, even working bandwidth and the like can be dynamically controlled, and the reconfiguration of the circuit is realized;
(3) the circuit can simultaneously realize the characteristics of ultra wide band, high gain, high linearity, high output power, lower power consumption and lower noise, and has good circuit reliability. The circuit adopts a novel distributed amplifying network structure. The current multiplexing structure is embedded in the distributed structure, so that the circuit can realize a very wide working frequency band and has high gain and low power consumption; the combination of the pHEMT transistor and the HBT transistor is adopted in each subunit, so that the circuit not only has a wide frequency band and excellent standing waves, but also realizes high linearity and high output power and has better noise. Meanwhile, the self-heating benefit problem of the HBT transistor is considered, two identical HBT tubes are adopted in each subunit to synthesize and replace a large-area HBT tube, so that the output power and the linearity are improved, and the reliability of the circuit is improved;
(4) the circuit has the characteristics of temperature stability and self-adaptive linearization. First, the HBT in the distributed structure employs a linearized bias control circuit structure with self-heating suppression, temperature stability, and controllable impedance. The circuit not only can enable the bias point of the HBT transistor in the distributed circuit to be adjusted and changed along with the power of the input signal, and obtain good compromise between efficiency and linearity, but also can simultaneously realize the purposes of linearization and temperature stability. Secondly, the pHEMT tube in the distributed structure adopts a self-bias structure, and the resistance in the self-bias structure can adjust the current in the transistor when the temperature changes, so that the temperature compensation effect is achieved, and the temperature stability is realized.
Drawings
Fig. 1 is a schematic block diagram of a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the invention provides a reconfigurable broadband amplifier based on a GaAs Bi-HEMT process, comprising a frequency band selectable input matching network, an adaptive bias feed network, a PD control unit and a novel distributed amplification network;
the frequency band selectable input matching network is used as the input end of the reconfigurable broadband amplifier, and the output end of the reconfigurable broadband amplifier is connected with the first input end of the novel distributed amplification network;
the output end of the novel distributed amplification network is used as the output end of the reconfigurable broadband amplifier;
the first output end of the self-adaptive bias feed network is connected with the input end of the PD control unit, and the second output end of the self-adaptive bias feed network is connected with the second input end of the novel distributed amplification network;
the first output end of the PD control unit is connected with the third input end of the novel distributed amplification network; a second output end of the PD control unit is connected with a fourth input end of the novel distributed amplification network; and a third output end of the PD control unit is connected with a fifth input end of the novel distributed amplification network.
In the embodiment of the present invention, as shown in fig. 2, the frequency band selectable input matching network includes a resistor R15, a resistor R16, a resistor R17, a capacitor C1, a capacitor C32, a capacitor C33, an inductor L30, an inductor L31, a grounded inductor L32, a grounded inductor L33, a grounded inductor L34, a microstrip line TL1, a microstrip line TL2, a switch tube M7, a switch tube M8, and a switch tube M9;
one end of the capacitor C1 is used as an input end of the frequency band selectable input matching network, and the other end of the capacitor C1 is connected with one end of the microstrip line TL 1; the other end of the microstrip line TL1 is connected to the drain of the switching tube M7, one end of the inductor L30, and one end of the capacitor C32, respectively; the grid of the switch tube M7 is connected with one end of the resistor R15; the other end of the resistor R15 is connected with a control voltage Vfcon 1; the source of the switching tube M7 is connected with the grounding inductor L32; the other end of the inductor L30 is connected with the other end of the capacitor C32, one end of the inductor L31, one end of the capacitor C33 and the drain of the switching tube M8 respectively; the grid of the switch tube M8 is connected with one end of the resistor R16; the other end of the resistor R16 is connected with a control voltage Vfcon 2; the source of the switching tube M8 is connected with the grounding inductor L33; the other end of the inductor L31 is connected with the other end of the capacitor C33, one end of the microstrip line TL2 and the drain electrode of the switch tube M9 respectively; the grid of the switch tube M9 is connected with one end of the resistor R17; the other end of the resistor R17 is connected with a control voltage Vfcon 3; the source of the switching tube M9 is connected with the grounding inductor L34; the other end of the microstrip line TL2 is used as the output end of the frequency band selectable input matching network.
In the embodiment of the present invention, as shown in fig. 2, the adaptive bias feed network includes a resistor R9, a resistor R11, a ground resistor R12, a resistor R13, a resistor R14, a ground capacitor C27, a capacitor C28, a ground capacitor C30, an inductor L29, a transistor H13, a transistor H14, and a transistor H15;
the base electrode of the triode H13 is respectively connected with one end of the resistor R11, the collector electrode of the triode H14, one end of the resistor R13 and the grounding capacitor C27; an emitter of the triode H13 is respectively connected with one end of the capacitor C28 and one end of the resistor R14; the other end of the capacitor C28 is used as a first output end of the self-adaptive bias feed network and is connected with the other end of the resistor R14; the collector of the triode H13 is respectively connected with the other end of the resistor R11, one end of the resistor R9, one end of the inductor L29 and the power supply feed VD; the other end of the resistor R9 is connected with a grounding capacitor C30; the base electrode of the triode H14 is connected with the other end of the resistor R13; the emitter of the triode H14 is respectively connected with the base of the triode H15 and the collector of the triode H15; the emitter of the triode H15 is connected with the grounding resistor R12; the other end of the inductor L29 serves as a second output terminal of the adaptive bias feed network.
In the embodiment of the present invention, as shown in fig. 2, the novel distributed amplifying network includes a ground resistor R1, a ground resistor R2, a ground resistor R3, a ground resistor R4, a ground resistor R5, a ground resistor R6, a ground resistor R7, a resistor R8, a resistor R10, a ground capacitor C2, a ground inductor L2, a ground capacitor C2, a ground inductor L2, a capacitor C2, a inductor L, a capacitor C2, a capacitor, Inductor L10, inductor L11, inductor L12, inductor L13, inductor L14, inductor L15, inductor L16, inductor L17, inductor L18, inductor L19, inductor L20, inductor L21, inductor L22, inductor L23, inductor L24, inductor L25, microstrip line TL 25, field effect tube M25, triode H25, H25 and H25;
the grid electrode of the field effect transistor M1 is used as a first input end of the novel distributed amplification network and is connected with one end of the inductor L1; the source electrode of the field effect transistor M1 is respectively connected with a grounding capacitor C2 and a grounding resistor R1; the drain electrode of the field effect transistor M1 is respectively connected with one end of the capacitor C8 and one end of the inductor L6; the other end of the capacitor C8 is used as a third input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL3, the base electrode of the triode H1 and the base electrode of the triode H2; the collector of the triode H2 is respectively connected with one end of the inductor L12 and the collector of the triode H1; the emitter of the triode H1 is respectively connected with the emitter of the triode H2, the other end of the inductor L6 and the grounding capacitor C14; the other end of the inductor L12 is connected with one end of an inductor L18, one end of an inductor L24 and one end of a microstrip line TL6 respectively; the other end of the inductor L18 is connected with a grounding capacitor C21; the other end of the microstrip line TL6 is used as a second input end of the novel distributed amplification network and is connected with one end of a resistor R10; the other end of the resistor R10 is connected with a grounding capacitor C29;
the grid of the field effect transistor M2 is respectively connected with the other end of the inductor L1 and one end of the inductor L2; the source electrode of the field effect transistor M2 is respectively connected with a grounding capacitor C3 and a grounding resistor R2; the drain electrode of the field effect transistor M2 is respectively connected with one end of the capacitor C9 and one end of the inductor L7; the other end of the capacitor C9 is respectively connected with the other end of the microstrip line TL3, the base electrode of the triode H3 and the base electrode of the triode H4; the collector of the triode H4 is respectively connected with one end of the inductor L13 and the collector of the triode H3; the emitter of the triode H3 is respectively connected with the emitter of the triode H4, the other end of the inductor L7 and the grounding capacitor C15; the other end of the inductor L13 is connected with one end of the inductor L19, the other end of the inductor L24 and one end of the inductor L25 respectively; the other end of the inductor L19 is connected with a grounding capacitor C22;
the grid electrode of the field effect transistor M3 is respectively connected with the other end of the inductor L2 and one end of the inductor L3; the source electrode of the field effect transistor M3 is respectively connected with a grounding capacitor C4 and a grounding resistor R3; the drain electrode of the field effect transistor M3 is respectively connected with one end of the capacitor C10 and one end of the inductor L8; the other end of the capacitor C10 is used as a fourth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL4, the base electrode of the triode H5 and the base electrode of the triode H6; the collector of the triode H6 is respectively connected with one end of the inductor L14 and the collector of the triode H5; the emitter of the triode H5 is respectively connected with the emitter of the triode H6, the other end of the inductor L8 and the grounding capacitor C16; the other end of the inductor L14 is connected with one end of the inductor L20, the other end of the inductor L25 and one end of the inductor L26 respectively; the other end of the inductor L20 is connected with a grounding capacitor C23;
the grid of the field effect transistor M4 is respectively connected with the other end of the inductor L3 and one end of the inductor L4; the source electrode of the field effect transistor M4 is respectively connected with a grounding capacitor C5 and a grounding resistor R4; the drain electrode of the field effect transistor M4 is respectively connected with one end of the capacitor C11 and one end of the inductor L9; the other end of the capacitor C11 is respectively connected with the other end of the microstrip line TL4, the base electrode of the triode H7 and the base electrode of the triode H8; the collector of the triode H8 is respectively connected with one end of the inductor L15 and the collector of the triode H7; the emitter of the triode H7 is respectively connected with the emitter of the triode H8, the other end of the inductor L9 and the grounding capacitor C17; the other end of the inductor L15 is connected with one end of the inductor L21, the other end of the inductor L26 and one end of the inductor L27 respectively; the other end of the inductor L21 is connected with a grounding capacitor C24;
the grid electrode of the field effect transistor M5 is respectively connected with the other end of the inductor L4 and one end of the inductor L5; the source electrode of the field effect transistor M5 is respectively connected with a grounding capacitor C6 and a grounding resistor R5; the drain electrode of the field effect transistor M5 is respectively connected with one end of the capacitor C12 and one end of the inductor L10; the other end of the capacitor C12 is used as a fifth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL5, the base electrode of the triode H9 and the base electrode of the triode H10; the collector of the triode H10 is respectively connected with one end of the inductor L16 and the collector of the triode H9; the emitter of the triode H9 is respectively connected with the emitter of the triode H10, the other end of the inductor L10 and the grounding capacitor C18; the other end of the inductor L16 is connected with one end of the inductor L22, the other end of the inductor L27 and one end of the inductor L28 respectively; the other end of the inductor L22 is connected with a grounding capacitor C25;
the grid of the field effect transistor M6 is respectively connected with the other end of the inductor L5, one end of the grounding resistor R7 and one end of the resistor R8; the other end of the resistor R8 is connected with a grounding capacitor C20; the source electrode of the field effect transistor M6 is respectively connected with a grounding capacitor C7 and a grounding resistor R6; the drain electrode of the field effect transistor M6 is respectively connected with one end of the capacitor C13 and one end of the inductor L11; the other end of the capacitor C13 is respectively connected with the other end of the microstrip line TL5, the base electrode of the triode H11 and the base electrode of the triode H12; the collector of the triode H12 is respectively connected with one end of the inductor L17 and the collector of the triode H11; the emitter of the triode H11 is respectively connected with the emitter of the triode H12, the other end of the inductor L11 and the grounding capacitor C19; the other end of the inductor L17 is connected with one end of an inductor L23, the other end of an inductor L28 and one end of a microstrip line TL7 respectively; the other end of the inductor L23 is connected with a grounding capacitor C26; the other end of the microstrip line TL7 is connected with one end of a capacitor C31; the other end of the capacitor C31 is used as the output end of the novel distributed amplification network.
The specific working principle and process of the present invention are described below with reference to fig. 2:
signals enter from the RFIN, are selectively input into the matching network through the frequency band, select the signals of the related frequency band and are amplified through the novel distributed amplification network; after entering a novel distributed amplification network, the signal is amplified in each subunit through a pHEMT tube, then further amplified through an HBT tube, and currents of the pHEMT tube and the HBT tube are multiplexed; the PD control unit completes control selection on the working state of the subunits of the distributed structure; and the amplified signals of the final subunit are synthesized and then output from an RFOUT terminal.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (4)
1. A reconfigurable broadband amplifier based on a GaAs Bi-HEMT technology is characterized by comprising a frequency band selectable input matching network, a self-adaptive bias feed network, a PD control unit and a novel distributed amplification network;
the frequency band selectable input matching network is used as an input end of the reconfigurable broadband amplifier, and an output end of the reconfigurable broadband amplifier is connected with a first input end of the novel distributed amplification network;
the output end of the novel distributed amplification network is used as the output end of the reconfigurable broadband amplifier;
the first output end of the self-adaptive bias feed network is connected with the input end of the PD control unit, and the second output end of the self-adaptive bias feed network is connected with the second input end of the novel distributed amplification network;
the first output end of the PD control unit is connected with the third input end of the novel distributed amplification network; the second output end of the PD control unit is connected with the fourth input end of the novel distributed amplification network; and a third output end of the PD control unit is connected with a fifth input end of the novel distributed amplification network.
2. The GaAs Bi-HEMT technology-based reconfigurable broadband amplifier of claim 1, wherein the frequency band selectable input matching network comprises a resistor R15, a resistor R16, a resistor R17, a capacitor C1, a capacitor C32, a capacitor C33, an inductor L30, an inductor L31, a grounded inductor L32, a grounded inductor L33, a grounded inductor L34, a microstrip line TL1, a microstrip line TL2, a switch tube M7, a switch tube M8 and a switch tube M9;
one end of the capacitor C1 is used as an input end of the frequency band selectable input matching network, and the other end of the capacitor C1 is connected with one end of the microstrip line TL 1; the other end of the microstrip line TL1 is connected to the drain of the switching tube M7, one end of the inductor L30 and one end of the capacitor C32 respectively; the grid of the switch tube M7 is connected with one end of a resistor R15; the other end of the resistor R15 is connected with a control voltage Vfcon 1; the source electrode of the switching tube M7 is connected with the grounding inductor L32; the other end of the inductor L30 is connected with the other end of the capacitor C32, one end of the inductor L31, one end of the capacitor C33 and the drain of the switching tube M8 respectively; the grid of the switch tube M8 is connected with one end of a resistor R16; the other end of the resistor R16 is connected with a control voltage Vfcon 2; the source electrode of the switching tube M8 is connected with the grounding inductor L33; the other end of the inductor L31 is connected with the other end of the capacitor C33, one end of the microstrip line TL2 and the drain electrode of the switch tube M9 respectively; the grid of the switch tube M9 is connected with one end of a resistor R17; the other end of the resistor R17 is connected with a control voltage Vfcon 3; the source electrode of the switching tube M9 is connected with the grounding inductor L34; and the other end of the microstrip line TL2 is used as an output end of the frequency band selectable input matching network.
3. The GaAs Bi-HEMT process based reconfigurable broadband amplifier of claim 1, wherein the adaptive bias feed network comprises a resistor R9, a resistor R11, a ground resistor R12, a resistor R13, a resistor R14, a ground capacitor C27, a capacitor C28, a ground capacitor C30, an inductor L29, a transistor H13, a transistor H14 and a transistor H15;
the base electrode of the triode H13 is respectively connected with one end of a resistor R11, the collector electrode of the triode H14, one end of a resistor R13 and a grounding capacitor C27; the emitting electrode of the triode H13 is respectively connected with one end of a capacitor C28 and one end of a resistor R14; the other end of the capacitor C28 is used as a first output end of the self-adaptive bias feed network and is connected with the other end of the resistor R14; the collector of the triode H13 is respectively connected with the other end of the resistor R11, one end of the resistor R9, one end of the inductor L29 and the power supply feed VD; the other end of the resistor R9 is connected with a grounding capacitor C30; the base electrode of the triode H14 is connected with the other end of the resistor R13; the emitter of the triode H14 is respectively connected with the base of the triode H15 and the collector of the triode H15; the emitter of the triode H15 is connected with a grounding resistor R12; the other end of the inductor L29 is used as a second output end of the adaptive bias feed network.
4. The GaAs Bi-HEMT process based reconfigurable broadband amplifier of claim 1, wherein the novel distributed amplification network comprises a grounded resistor R1, a grounded resistor R2, a grounded resistor R3, a grounded resistor R4, a grounded resistor R5, a grounded resistor R6, a grounded resistor R7, a resistor R8, a resistor R10, a grounded capacitor C2, a grounded capacitor C3, a grounded capacitor C4, a grounded capacitor C5, a grounded capacitor C6, a grounded capacitor C7, a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C12, a capacitor C13, a grounded capacitor C14, a grounded capacitor C15, a grounded capacitor C16, a L16, a inductor L16, a capacitor C16, a grounded capacitor C16, a, An inductor L3, an inductor L4, a microstrip line TL4, a field effect tube M4, a triode H4, and a triode H4;
the grid electrode of the field effect transistor M1 is used as a first input end of the novel distributed amplification network and is connected with one end of an inductor L1; the source electrode of the field effect transistor M1 is respectively connected with a grounding capacitor C2 and a grounding resistor R1; the drain electrode of the field effect transistor M1 is respectively connected with one end of a capacitor C8 and one end of an inductor L6; the other end of the capacitor C8 is used as a third input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL3, the base electrode of the triode H1 and the base electrode of the triode H2; the collector of the triode H2 is respectively connected with one end of an inductor L12 and the collector of the triode H1; the emitting electrode of the triode H1 is respectively connected with the emitting electrode of the triode H2, the other end of the inductor L6 and the grounding capacitor C14; the other end of the inductor L12 is connected with one end of an inductor L18, one end of an inductor L24 and one end of a microstrip line TL6 respectively; the other end of the inductor L18 is connected with a grounding capacitor C21; the other end of the microstrip line TL6 is used as a second input end of the novel distributed amplification network and is connected with one end of a resistor R10; the other end of the resistor R10 is connected with a grounding capacitor C29;
the grid electrode of the field effect transistor M2 is respectively connected with the other end of the inductor L1 and one end of the inductor L2; the source electrode of the field effect transistor M2 is respectively connected with a grounding capacitor C3 and a grounding resistor R2; the drain electrode of the field effect transistor M2 is respectively connected with one end of a capacitor C9 and one end of an inductor L7; the other end of the capacitor C9 is connected with the other end of the microstrip line TL3, the base of the triode H3 and the base of the triode H4 respectively; the collector of the triode H4 is respectively connected with one end of an inductor L13 and the collector of the triode H3; the emitting electrode of the triode H3 is respectively connected with the emitting electrode of the triode H4, the other end of the inductor L7 and the grounding capacitor C15; the other end of the inductor L13 is connected with one end of an inductor L19, the other end of the inductor L24 and one end of the inductor L25 respectively; the other end of the inductor L19 is connected with a grounding capacitor C22;
the grid electrode of the field effect transistor M3 is respectively connected with the other end of the inductor L2 and one end of the inductor L3; the source electrode of the field effect transistor M3 is respectively connected with a grounding capacitor C4 and a grounding resistor R3; the drain electrode of the field effect transistor M3 is respectively connected with one end of a capacitor C10 and one end of an inductor L8; the other end of the capacitor C10 is used as a fourth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL4, the base electrode of the triode H5 and the base electrode of the triode H6; the collector of the triode H6 is respectively connected with one end of an inductor L14 and the collector of the triode H5; the emitting electrode of the triode H5 is respectively connected with the emitting electrode of the triode H6, the other end of the inductor L8 and the grounding capacitor C16; the other end of the inductor L14 is connected with one end of an inductor L20, the other end of an inductor L25 and one end of an inductor L26 respectively; the other end of the inductor L20 is connected with a grounding capacitor C23;
the grid electrode of the field effect transistor M4 is respectively connected with the other end of the inductor L3 and one end of the inductor L4; the source electrode of the field effect transistor M4 is respectively connected with a grounding capacitor C5 and a grounding resistor R4; the drain electrode of the field effect transistor M4 is respectively connected with one end of a capacitor C11 and one end of an inductor L9; the other end of the capacitor C11 is connected with the other end of the microstrip line TL4, the base of the triode H7 and the base of the triode H8 respectively; the collector of the triode H8 is respectively connected with one end of an inductor L15 and the collector of the triode H7; the emitting electrode of the triode H7 is respectively connected with the emitting electrode of the triode H8, the other end of the inductor L9 and the grounding capacitor C17; the other end of the inductor L15 is connected with one end of an inductor L21, the other end of an inductor L26 and one end of an inductor L27 respectively; the other end of the inductor L21 is connected with a grounding capacitor C24;
the grid electrode of the field effect transistor M5 is respectively connected with the other end of the inductor L4 and one end of the inductor L5; the source electrode of the field effect transistor M5 is respectively connected with a grounding capacitor C6 and a grounding resistor R5; the drain electrode of the field effect transistor M5 is respectively connected with one end of a capacitor C12 and one end of an inductor L10; the other end of the capacitor C12 is used as a fifth input end of the novel distributed amplification network and is respectively connected with one end of a microstrip line TL5, the base electrode of the triode H9 and the base electrode of the triode H10; the collector of the triode H10 is respectively connected with one end of an inductor L16 and the collector of the triode H9; the emitting electrode of the triode H9 is respectively connected with the emitting electrode of the triode H10, the other end of the inductor L10 and the grounding capacitor C18; the other end of the inductor L16 is connected with one end of an inductor L22, the other end of an inductor L27 and one end of an inductor L28 respectively; the other end of the inductor L22 is connected with a grounding capacitor C25;
the grid of the field effect transistor M6 is respectively connected with the other end of the inductor L5, one end of the grounding resistor R7 and one end of the resistor R8; the other end of the resistor R8 is connected with a grounding capacitor C20; the source electrode of the field effect transistor M6 is respectively connected with a grounding capacitor C7 and a grounding resistor R6; the drain electrode of the field effect transistor M6 is respectively connected with one end of a capacitor C13 and one end of an inductor L11; the other end of the capacitor C13 is connected with the other end of the microstrip line TL5, the base of the triode H11 and the base of the triode H12 respectively; the collector of the triode H12 is respectively connected with one end of an inductor L17 and the collector of the triode H11; the emitting electrode of the triode H11 is respectively connected with the emitting electrode of the triode H12, the other end of the inductor L11 and the grounding capacitor C19; the other end of the inductor L17 is connected with one end of an inductor L23, the other end of an inductor L28 and one end of a microstrip line TL7 respectively; the other end of the inductor L23 is connected with a grounding capacitor C26; the other end of the microstrip line TL7 is connected with one end of a capacitor C31; the other end of the capacitor C31 is used as the output end of the novel distributed amplification network.
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| CN114866047A (en) * | 2022-07-07 | 2022-08-05 | 成都嘉纳海威科技有限责任公司 | Bi-Hemt technology-based broadband dual-channel transceiving amplification chip |
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| CN115913146B (en) * | 2023-03-09 | 2023-07-14 | 成都嘉纳海威科技有限责任公司 | Reconfigurable amplifier chip |
| CN116317988A (en) * | 2023-05-24 | 2023-06-23 | 广东工业大学 | Reconfigurable broadband low-noise amplifier |
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| CN114710126B (en) | 2022-09-20 |
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