CN109474245A - A kind of circuit structure of the broadband distributed amplifier with low-frequency gain compensation - Google Patents
A kind of circuit structure of the broadband distributed amplifier with low-frequency gain compensation Download PDFInfo
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- CN109474245A CN109474245A CN201811556771.3A CN201811556771A CN109474245A CN 109474245 A CN109474245 A CN 109474245A CN 201811556771 A CN201811556771 A CN 201811556771A CN 109474245 A CN109474245 A CN 109474245A
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- Prior art keywords
- amplifier
- access
- distributed
- low
- circuit
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
Abstract
The present invention proposes a kind of circuit structure of broadband distributed amplifier with low-frequency gain compensation, has broadband amplification characteristic；Because the distributed amplifier is attached to low-frequency gain compensation amplifier, amplifier can be made to keep the more preferably performances such as gain flatness in broader frequency range.
Description
Technical field
The present invention relates to Monolithic Microwave Integrated Circuit Technology field more particularly to a kind of broadbands point with low-frequency gain compensation
The circuit structure of cloth amplifier.
Background technique
Wideband microwave amplifier mainly applies to the broadband connections such as electronic monitoring and confrontation, radar, optical fiber and instrument system
System, they require the amplifier of multi-octave.It designs amplifier of the relative bandwidth greater than 50% and is one and great choose
War.Traditional broad band amplifier technology includes reactance/resistive network structure, parallel resistive feedback arrangement, balanced structure, divides
Cloth structure.
Monolithic integrated microwave circuit (Monolithic Microwave Integrated Circuit, MMIC) is a kind of
Active device and passive device are produced on the microwave circuit of the same semiconductor-based on piece.In distributed (or traveling wave) amplifier
In, by the way that the capacitor that outputs and inputs of a certain number of transistors to be combined among artificial transmission's cable architecture, solve width
Problem encountered when outputting and inputting impedance with matching transistor.The real advantage of this technology is using MMIC skill
Art, distributed amplifier (Distributed Amplifier, DA) have simple circuit topology, can obtain extremely wide work
Make frequency band, and its performance is insensitive to the variation of technological parameter
Traditional wideband power amplifer circuit is as shown in Figure 1, by four transistors and a grid line and a drain line structure
At.Input signal successively motivates each FET before by a terminal load absorption along gateline transmission.FET mutual conductance amplification letter
After number, signal is passed to drain line.If the phase velocity of grid line and drain line is roughly the same, the signal from each FET
It will be added in output port.Load terminal on drain line at reverse port sponges any useless signal.
Since MMIC does not have advantage to big inductance is integrated, so low-frequency gain must be improved using piece external inductance,
This is not a good news for single-chip integration.It is integrated due to higher and higher to the bandwidth requirement of broad band amplifier now
Degree require it is also higher and higher, therefore for ensure that the gain of low-frequency range is maintained while, realize complete single-chip integration gradually at
For important research direction.
Summary of the invention
The distributed amplifier structure with low-frequency compensation that the present invention provides a kind of is put with solving distribution in the prior art
Big device is difficult to the problem of taking into account single-chip integration and improving low-frequency gain.
To achieve the goals above, it is proposed that scheme is as follows:
A kind of wideband power amplifer, comprising: distributed 1 access is used for frequency range one；2 access of amplifier is used for frequency range two.
Preferably, further includes:
The control circuit being connected respectively with distributed 1 access and 2 access of amplifier, for controlling distributed 1 access
And the bias voltage of 2 access of amplifier, while for control it is described switch on-off so that the amplifier architecture realizes gain
Compensation.
The power supply circuit being connected respectively with distributed 1 access and 2 access of amplifier.
It is connected to the capacitor C1 of the power supply circuit Yu distributed 1 access, for logical exchange stopping direct current or transformation
Impedance.
Be connected to the input matching network of the power supply circuit Yu 2 access of amplifier, for logical exchange stopping direct current or
Person's transforming impedance.
It can be seen from the above technical scheme that power amplifier disclosed by the invention, the distribution for frequency range one
2 access of amplifier of 1 access of formula and frequency range two, when frequency range one works, switch S1 is opened, and S2 is closed, power supply Vdd1 power supply,
Vdd2 ground connection, this time level C2, C5 are used for output coupling, and when frequency range two works, switch S2 is opened, and S1 is closed, power supply Vdd2
Power supply, Vdd1 ground connection, the work of output matching at this time.
When design, decision design 1 access of distribution makes its input and output all reach 50 ohm of impedance value.Then pass through
Input and output matching network, so that the inter-stage impedance of corresponding 2 access of amplifier of frequency range two reaches optimal value.Due to that can be segmented
The inter-stage impedance of two frequency ranges is matched, to widen the working band of amplifier, realizes single-chip integration.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments.
Fig. 1 is the power amplifier circuit figure of the prior art.
Fig. 2 is power amplifier circuit figure disclosed by the embodiments of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
A kind of distributed amplifier structure with low-frequency compensation, with solve in the prior art distributed amplifier be difficult to it is simultaneous
The problem of caring for single-chip integration and improving low-frequency gain.
Specifically, as shown in Figure 2, comprising: distributed 1 access is used for frequency range one；2 access of amplifier is used for frequency range two
Specific working principle are as follows:
When frequency range two works, control circuit submodule provides biasing, one distributed amplifier of access to the amplifier 2 of access two
1 is biased to 0V, while control switch S1 is closed, and switch S2 is opened, while power supply Vdd1 is grounded, Vdd2 power supply.
At this point, input and output matching provides the optimum impedance matching of the frequency range, the resonance of C3 and L1 composition for frequency range two
Network resonant frequency can be not considered far from working band.
When frequency range one works, CMOS control circuitry submodule is to one distributed amplifier 1 of access and provides biasing, access
Two amplifier 2 is biased to 0V, while control switch S2 is closed, and switch S1 is opened, while power supply Vdd2 is grounded, Vdd1 power supply.
At this point, C1, C2 realize the effect that blocking circulation exchanges with C5 for frequency range one.
In conclusion the input and output network of frequency range two is used to determine the optimum impedance matching of the frequency range.Point of frequency range one
Cloth amplifier input and output are 50 ohm, and capacitor C1, C2, C5 are for blocking circulation exchange.In this way, just having widened interstage matched
Bandwidth, so that widens entire amplifier can working band.
Claims (9)
1. a kind of distributed amplifier circuit structure for improving distributed amplifier low-frequency gain performance characterized by comprising
Distributed 1 access, one access of frequency range；2 access of amplifier, two access of frequency range.
2. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 1
Structure, it is characterised in that: further include the switch being connected respectively with distributed 1 access and 2 access of amplifier, to control distribution
The turn-on and turn-off of 2 access of 1 access of formula or amplifier；The switch input terminal connects input signal, and output end is logical with distribution 1 respectively
Road is connected with the low-frequency amplifier that input matching circuit connects.
3. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 1
Structure, it is characterised in that: further include the control circuit being connected respectively with distributed 1 access and 2 access of amplifier, for controlling
The bias voltage of distributed 1 access and 2 access of amplifier, at the same for control it is described switch on-off so that the function
Rate amplifier different frequency range is relatively independent, realizes Broadband Matching between grade；It is connected to the electricity of the switch and distributed 1 access
Hold C1, for obstructing direct current；It is connected to the matching network 2 of the switch and the low-frequency amplifier, for inputting matching.
4. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 1
Structure, it is characterised in that: the power supply circuit being connected respectively with distributed 1 access and 2 access of amplifier.
5. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 1
Structure, it is characterised in that: the output matching circuit being connected respectively with 2 access of amplifier.
6. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 1
Structure, it is characterised in that: be connected to the capacitor C2 of the power supply circuit Yu distributed 1 access, for logical exchange stopping direct current or
Person's transforming impedance.
7. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 2
Structure, it is characterised in that: distributed 1 access and 2 access of amplifier are connected by capacitor C5 with load.
8. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 2
Structure, it is characterised in that: distributed 1 access includes:
Driving stage of the input terminal as distributed 1 path input；The feeder ear of the driving stage and the power supply circuit
It is connected；The control terminal of the driving stage is connected with the control circuit.
9. a kind of distributed amplifier circuit knot for improving distributed amplifier low-frequency gain performance according to claim 2
Structure, it is characterised in that: 2 access of amplifier includes:
Driving stage of the input terminal as 2 path input of amplifier；The feeder ear of the driving stage and the power supply circuit
It is connected；The control terminal of the driving stage is connected with the control circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811556771.3A CN109474245A (en) | 2018-12-19 | 2018-12-19 | A kind of circuit structure of the broadband distributed amplifier with low-frequency gain compensation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811556771.3A CN109474245A (en) | 2018-12-19 | 2018-12-19 | A kind of circuit structure of the broadband distributed amplifier with low-frequency gain compensation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109474245A true CN109474245A (en) | 2019-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811556771.3A Pending CN109474245A (en) | 2018-12-19 | 2018-12-19 | A kind of circuit structure of the broadband distributed amplifier with low-frequency gain compensation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114710126A (en) * | 2022-06-08 | 2022-07-05 | 成都嘉纳海威科技有限责任公司 | Reconfigurable broadband amplifier based on GaAs Bi-HEMT technology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656509A (en) * | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | High and low power combination circuit of radio frequency power amplifier |
| US20130260703A1 (en) * | 2012-03-27 | 2013-10-03 | Bae Systems Information And Electronic Systems Integration Inc. | Ultra-wideband high power amplifier architecture |
| CN104485904A (en) * | 2015-01-03 | 2015-04-01 | 广州钧衡微电子科技有限公司 | Wideband radio frequency power amplifier |
| CN105490648A (en) * | 2016-01-08 | 2016-04-13 | 合肥雷诚微电子有限公司 | Multi-mode power amplifier and application thereof |
-
2018
- 2018-12-19 CN CN201811556771.3A patent/CN109474245A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656509A (en) * | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | High and low power combination circuit of radio frequency power amplifier |
| US20130260703A1 (en) * | 2012-03-27 | 2013-10-03 | Bae Systems Information And Electronic Systems Integration Inc. | Ultra-wideband high power amplifier architecture |
| CN104485904A (en) * | 2015-01-03 | 2015-04-01 | 广州钧衡微电子科技有限公司 | Wideband radio frequency power amplifier |
| CN105490648A (en) * | 2016-01-08 | 2016-04-13 | 合肥雷诚微电子有限公司 | Multi-mode power amplifier and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114710126A (en) * | 2022-06-08 | 2022-07-05 | 成都嘉纳海威科技有限责任公司 | Reconfigurable broadband amplifier based on GaAs Bi-HEMT technology |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190315 |