CN114709132A - 一种晶圆切割工艺 - Google Patents
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Abstract
本发明公开一种一种晶圆切割工艺,包括以下步骤:S1、于晶圆正面切割道处切割形成宽而浅的沟槽A,研磨晶圆背面使晶圆减薄;S2、翻转晶圆正面朝上置入第一载盘中;S3、翻转晶圆背面朝上置入第二载盘中,晶圆侧壁外圈SOG进行封堵;S4、在晶圆背面对应切割道处切割形成窄而深的沟槽B,最后进行背面的粒子植入及背面金属制程;S5、采用晶圆环切机沿对晶圆边缘处SOG切断,用裂片及拉膜机将晶圆未断裂部分断开。本发明工艺减少了载板键合解键合的步骤,同时利用正面的沟槽切割背面切割道,无需双面曝光,最后采用裂片技术断开两面沟槽衔接处,快速完成晶圆切割,提高了晶圆切割的效率,降低了晶圆切割的成本。
Description
技术领域
本发明涉及晶圆加工技术领域,具体的是一种晶圆切割工艺。
背景技术
在半导体制程中,需要将晶圆(wafer)切割成一个个芯片(d ie),然后将这些芯片做成不同的半导体封装结构。随着半导体行业的发展,为了满足电子器件微型化,多功能化和智能化的要求,对超薄晶圆的需求日益增长。
现有技术中的晶圆切割方法通常包括主要有背面水刀半切透加裂片工艺和激光工艺。现行工艺作业超薄晶圆时,研磨后晶圆易翘曲,且后续处理作业时易造成晶圆破裂。尤其是采用传统金刚石刀切割超薄、低介电常数晶圆时,容易出现金属层间分层现象。采用激光切割工艺虽然它产生的裂边齐整,不易导致晶圆破裂,但是激光切割Si片和金属的速度慢,生产效率低,同时,晶圆背面若有金属,激光切割会看不到正面的图案,所以必须双面曝光,工艺步骤增加生产成本高。
发明内容
为解决上述背景技术中提到的不足,本发明的目的在于提供一种晶圆切割工艺,减少了载板键合解键合的步骤,同时利用正面的沟槽切割背面切割道,无需双面曝光,最后采用裂片技术断开两面沟槽衔接处,快速完成晶圆切割,提高了晶圆切割的效率,降低了晶圆切割的成本。
本发明的目的可以通过以下技术方案实现:
一种晶圆切割工艺,包括以下步骤:
S1、于完成正面制程的晶圆正面切割道处切割形成宽而浅的沟槽A,然后将晶圆正面粘附研磨胶带,研磨晶圆背面使晶圆减薄至所需厚度;
S2、在减薄后的晶圆背面贴在第一载盘的凹槽中,然后整体翻转研磨胶带、晶圆和第一载盘,揭下研磨胶带后晶圆正面朝上置入第一载盘中;
S3、将晶圆正面贴在第二载盘的凹槽中,然后整体翻转第一载盘、晶圆和第二载盘,取下第一载盘后晶圆背面朝上置入第二载盘中,在晶圆侧壁外圈处通过旋转涂布介质SOG进行封堵;
S4、在晶圆背面对应切割道处切割形成窄而深的沟槽B,最后进行背面的粒子植入及背面金属制程;
S5、采用晶圆环切机沿对晶圆边缘处SOG切断,然后再晶圆背面贴附在切割模框上,整体翻转切割模框、晶圆和载盘,取下正面的载盘后用裂片及拉膜机将晶圆未断裂部分断开。
进一步优选地,沟槽A的宽度为30-60μm,深度为10-20μm。
进一步优选地,晶圆背面减薄后厚度为90-120μm。
进一步优选地,沟槽B的宽度为10-20μm,深度为50-60μm。
进一步优选地,步骤S1中晶圆初始厚度<100μm时,先将完成正面制程的晶圆背面键合玻璃载板后在正面切割道处切割形成宽而浅的沟槽A,再将晶圆正面粘附研磨胶带,解键合移除背面的玻璃载板,研磨晶圆背面使晶圆减薄至所需厚度。
进一步优选地,步骤S3中第二载盘还可以为平面载盘,采用SOG封堵时涂布的SOG材料覆盖晶圆的背面边缘。
本发明的有益效果:
本发明先在晶圆正面切割道处开设宽而浅的沟槽A,完成晶圆背面减薄后转移至载盘中,利用载盘承载减薄后晶圆,无需进行键合,然后从晶圆的背面识别第一沟槽并对准沟槽A进行沟槽B的切割,无需二次曝光,在切割沟槽B后可以在晶圆的背面进行粒子植入和背面金属制程,金属镀层在沟槽B处会沉积在沟槽B的底部,因此晶圆背面金属层会自动断开,最后晶圆转移至切割模框上采用裂片技术使沟槽A和沟槽B中间衔接处断开即可完成晶圆的切割,提高了晶圆切割的效率,降低了晶圆切割的成本。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明实施例1步骤S1的工艺流程图;
图2是本发明实施例1步骤S2的工艺流程图;
图3是本发明实施例1步骤S3的工艺流程图;
图4是本发明实施例1步骤S4的工艺流程图;
图5是本发明实施例1步骤S5的工艺流程图;
图6是本发明实施例2步骤S1的工艺流程图;
图7是本发明实施例3步骤S3的工艺流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是“载盘”是一种用于承载晶圆的载具,其材质可以为硅、石墨、玻璃或蓝宝石等,分为凹槽型载盘(见申请人在先申请的专利,专利申请号:2021114160788)和平面型载盘,在本发明实施例1和实施例2中采用的“第一载盘”和“第二载盘”均为凹槽型载盘,本发明实施例3中采用的“第一载盘”为凹槽型载盘,“第二载盘”为平面型载盘,平面型载盘表面没有开设凹槽,但中间与凹槽型载盘一样开设有透气孔。
实施例1
如图1-5所示,一种晶圆切割工艺,包括以下步骤:
S1、于完成正面制程的晶圆正面切割道处切割形成60×20μm的沟槽A,然后将晶圆正面粘附研磨胶带,研磨晶圆背面使晶圆减薄至120μm;
S2、在减薄后的晶圆背面贴在第一载盘的凹槽中,然后整体翻转研磨胶带、晶圆和第一载盘,揭下研磨胶带后晶圆正面朝上置入第一载盘中;
S3、将晶圆正面贴在第二载盘的凹槽中,然后整体翻转第一载盘、晶圆和第二载盘,取下第一载盘后晶圆背面朝上置入第二载盘中,在晶圆侧壁外圈处通过旋转涂布介质SOG进行封堵;
S4、在晶圆背面对应切割道处切割形成20×60μm的沟槽B,最后进行背面的粒子植入及背面金属制程;
S5、采用晶圆环切机沿对晶圆边缘处SOG切断,然后再晶圆背面贴附在切割模框上,整体翻转切割模框、晶圆和载盘,取下正面的载盘后用裂片及拉膜机将晶圆未断裂部分断开。
实施例2
一种晶圆切割工艺,包括以下步骤:
S1、将完成正面制程的晶圆背面键合玻璃载板后在正面切割道处切割形成30×10μm的沟槽A,再将晶圆正面粘附研磨胶带,解键合移除背面的玻璃载板,研磨晶圆背面使晶圆减薄至所需厚度;
S2、在减薄后的晶圆背面贴在第一载盘的凹槽中,然后整体翻转研磨胶带、晶圆和第一载盘,揭下研磨胶带后晶圆正面朝上置入第一载盘中;
S3、将晶圆正面贴在第二载盘的凹槽中,然后整体翻转第一载盘、晶圆和第二载盘,取下第一载盘后晶圆背面朝上置入第二载盘中,在晶圆侧壁外圈处通过旋转涂布介质SOG进行封堵;
S4、在晶圆背面对应切割道处切割形成10×50μm的沟槽B,最后进行背面的粒子植入及背面金属制程;
S5、采用晶圆环切机沿对晶圆边缘处SOG切断,然后再晶圆背面贴附在切割模框上,整体翻转切割模框、晶圆和载盘,取下正面的载盘后用裂片及拉膜机将晶圆未断裂部分断开。
实施例3
S1、于完成正面制程的晶圆正面切割道处切割形成40×15μm的沟槽A,然后将晶圆正面粘附研磨胶带,研磨晶圆背面使晶圆减薄至90μm;
S2、在减薄后的晶圆背面贴在第一载盘的凹槽中,然后整体翻转研磨胶带、晶圆和第一载盘,揭下研磨胶带后晶圆正面朝上置入第一载盘中;
S3、将晶圆正面贴在第二载盘的表面,然后整体翻转第一载盘、晶圆和第二载盘,取下第一载盘后晶圆背面朝上置入第二载盘中,在晶圆背面边缘处通过旋转涂布介质SOG进行封堵;
S4、在晶圆背面对应切割道处切割形成15×55μm的沟槽B,最后进行背面的粒子植入及背面金属制程;
S5、采用晶圆环切机沿对晶圆边缘处SOG切断,然后再晶圆背面贴附在切割模框上,整体翻转切割模框、晶圆和载盘,取下正面的载盘后用裂片及拉膜机将晶圆未断裂部分断开。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (6)
1.一种晶圆切割工艺,其特征在于,包括以下步骤:
S1、于完成正面制程的晶圆正面切割道处切割形成宽而浅的沟槽A,然后将晶圆正面粘附研磨胶带,研磨晶圆背面使晶圆减薄至所需厚度;
S2、在减薄后的晶圆背面贴在第一载盘的凹槽中,然后整体翻转研磨胶带、晶圆和第一载盘,揭下研磨胶带后晶圆正面朝上置入第一载盘中;
S3、将晶圆正面贴在第二载盘的凹槽中,然后整体翻转第一载盘、晶圆和第二载盘,取下第一载盘后晶圆背面朝上置入第二载盘中,在晶圆侧壁外圈处通过旋转涂布介质SOG进行封堵;
S4、在晶圆背面对应切割道处切割形成窄而深的沟槽B,最后进行背面的粒子植入及背面金属制程;
S5、采用晶圆环切机沿对晶圆边缘处SOG切断,然后再晶圆背面贴附在切割模框上,整体翻转切割模框、晶圆和载盘,取下正面的载盘后用裂片及拉膜机将晶圆未断裂部分断开。
2.根据权利要求1所述的晶圆切割工艺,其特征在于,所述沟槽A的宽度为30-60μm,深度为10-20μm。
3.根据权利要求1所述的晶圆切割工艺,其特征在于,所述晶圆背面减薄后厚度为90-120μm。
4.根据权利要求1所述的晶圆切割工艺,其特征在于,所述沟槽B的宽度为10-20μm,深度为50-60μm。
5.根据权利要求1所述的晶圆切割工艺,其特征在于,所述步骤S1中晶圆初始厚度<100μm时,先将完成正面制程的晶圆背面键合玻璃载板后在正面切割道处切割形成宽而浅的沟槽A,再将晶圆正面粘附研磨胶带,解键合移除背面的玻璃载板,研磨晶圆背面使晶圆减薄至所需厚度。
6.根据权利要求1所述的晶圆切割工艺,其特征在于,所述步骤S3中第二载盘还可以为平面载盘,采用SOG封堵时涂布的SOG材料覆盖晶圆的背面边缘。
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