CN114700857A - Semiconductor wafer polishing device capable of completely removing ring-shaped oxide layer - Google Patents
Semiconductor wafer polishing device capable of completely removing ring-shaped oxide layer Download PDFInfo
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- CN114700857A CN114700857A CN202210628730.0A CN202210628730A CN114700857A CN 114700857 A CN114700857 A CN 114700857A CN 202210628730 A CN202210628730 A CN 202210628730A CN 114700857 A CN114700857 A CN 114700857A
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- 238000005498 polishing Methods 0.000 title claims abstract description 240
- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 239000007788 liquid Substances 0.000 claims description 26
- 230000001174 ascending effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 4
- 238000007517 polishing process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 94
- 239000007921 spray Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a semiconductor wafer polishing device capable of completely removing a ring-shaped oxide layer, which comprises: the polishing device comprises a base, a rack, an upper polishing mechanism, a lower polishing mechanism, an end face polishing mechanism, a sucker for adsorbing and fixing a semiconductor wafer and a rotating motor for driving the sucker to rotate so as to drive the semiconductor wafer to rotate; the frame is fixed above the base; the upper polishing mechanism and the end face polishing mechanism are arranged on the frame; the lower polishing mechanism and the rotating motor are mounted to the base; the diameter of the sucker is smaller than that of the semiconductor wafer; the semiconductor wafer is positioned on the sucking disc, and the sucking disc adsorbs the middle part of the semiconductor wafer; a semiconductor wafer polishing apparatus capable of completely removing a ring-shaped oxide layer has an end-face polishing state and an edge polishing state. The invention has the beneficial effects that: the ring-shaped oxide layers on the front surface and the back surface can be completely removed in the local polishing process.
Description
Technical Field
The invention relates to a semiconductor wafer polishing device capable of completely removing a ring-shaped oxide layer.
Background
In a semiconductor manufacturing process, polishing of a wafer typically requires several steps:
1. rough polishing, i.e. polishing both the front and back surfaces of the wafer.
2. Forming annular oxide layers on the front and back surfaces of the semiconductor wafer respectively, wherein the annular oxide layers cover the outer circumferential areas of the front and back surfaces of the semiconductor wafer close to the edges;
3. and local polishing, namely performing local mirror polishing on the edge part of the wafer, and removing the annular oxide layer.
4. And (4) finish polishing, namely performing mirror polishing on the front surface or the front surface and the back surface of the wafer.
Traditional local polishing equipment emphatically polishes the terminal surface, and the annular oxide layer of tow sides is got rid of incompletely, and remaining part is mainly got rid of at the finish polishing in-process for polishing efficiency is low.
Disclosure of Invention
The present invention is directed to a semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer, so as to solve the above-mentioned problems in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
a semiconductor wafer polishing apparatus capable of completely removing a ring-shaped oxide layer, comprising: the polishing device comprises a base, a rack, an upper polishing mechanism, a lower polishing mechanism, an end face polishing mechanism, a sucker for adsorbing and fixing a semiconductor wafer and a rotating motor for driving the sucker to rotate so as to drive the semiconductor wafer to rotate; the frame is fixed above the base; the upper polishing mechanism and the end face polishing mechanism are arranged on the frame; the lower polishing mechanism and the rotating motor are mounted to the base; the diameter of the sucker is smaller than that of the semiconductor wafer; the semiconductor wafer is positioned on the sucking disc, and the sucking disc adsorbs the middle part of the semiconductor wafer;
go up polishing mechanism includes: the polishing device comprises an ascending and descending hydraulic cylinder, an upper motor base, an upper motor and an upper polishing piece which is used for being in contact with the upper surface of a semiconductor wafer; the lifting hydraulic cylinder drives the upper motor base to move up and down; the lifting hydraulic cylinder is arranged on the frame; the upper motor is fixed to the upper motor base; the upper motor drives the upper polishing piece to rotate;
the lower polishing mechanism includes: the lower lifting hydraulic cylinder, the lower motor base, the lower motor and a lower polishing piece are used for being in contact with the lower surface of the semiconductor wafer; the lower lifting hydraulic cylinder drives the lower motor base to move up and down; the lower lifting hydraulic cylinder is mounted to the base; the lower motor is fixed to the lower motor base; the lower motor drives the lower polishing piece to rotate;
the terminal surface polishing mechanism includes: the polishing device comprises a telescopic hydraulic cylinder, a telescopic motor base, a telescopic motor and an end face polishing piece, wherein the end face polishing piece is used for polishing by contacting with the end face of a semiconductor wafer; the telescopic hydraulic cylinder drives the telescopic motor base to move up and down; the telescopic hydraulic cylinder is mounted to the frame; the telescopic motor is fixed to the telescopic motor base; the end surface polishing piece is driven to rotate by the telescopic motor;
the semiconductor wafer polishing device capable of completely removing the ring-shaped oxide layer has an end face polishing state and an edge polishing state;
in the end face polishing state, the end face polishing piece is contacted with the end face of the semiconductor wafer, and the lower polishing piece and the upper polishing piece are not contacted with the semiconductor wafer;
in an edge polishing state, the lower polishing member and the upper polishing member are respectively in contact with the lower surface and the upper surface of the semiconductor wafer, and the end surface polishing member is not in contact with the semiconductor wafer;
firstly, polishing the semiconductor wafer in an end face polishing state, and then polishing the semiconductor wafer in an edge polishing state;
after the polishing is finished in the end face polishing state, the telescopic hydraulic cylinder contracts to drive the telescopic motor base to move so as to enable the end face polishing piece to be far away from the semiconductor wafer, and then the lower lifting hydraulic cylinder and the upper lifting hydraulic cylinder respectively drive the lower motor base and the upper motor base to move towards the direction close to the semiconductor wafer so as to enable the lower polishing piece and the upper polishing piece to respectively contact the lower surface and the upper surface of the semiconductor wafer, so that the edge polishing state is achieved.
As a further scheme of the invention: the semiconductor wafer polishing apparatus capable of completely removing the ring-shaped oxide layer has an initial state for loading or unloading a semiconductor wafer; in an initial state, the lower polishing member, the upper polishing member and the end face polishing member are not in contact with the semiconductor wafer; after the edge polishing is finished in the edge polishing state, the lower lifting hydraulic cylinder and the lifting hydraulic cylinder respectively drive the lower motor base and the upper motor base to move towards the direction far away from the semiconductor wafer, so that the lower polishing piece and the upper polishing piece are respectively separated from being in contact with the semiconductor wafer.
As a further scheme of the invention: when the end face is in a polished state, the upper motor and the lower motor are closed, and the telescopic motor and the rotating motor are in an open state; when the edge is polished, the telescopic motor is closed, and the upper motor, the lower motor and the rotating motor are in an open state.
As a further scheme of the invention: in the initial state, the upper motor, the lower motor, the telescopic motor and the rotating motor are closed.
As a further scheme of the invention: the frame is provided with a movable door and a plurality of closing plates; the movable door is rotatably mounted to the frame; the closing plate is fixed to the frame; the movable door and the closing plate enclose a closed space together; the suction cup and the semiconductor wafer sucked by the suction cup are positioned in the closed space.
As a further scheme of the invention: the top of the base is formed with a sump for collecting polishing solution.
As a further scheme of the invention: the base is provided with a liquid discharge hole for discharging the polishing liquid in the liquid collecting tank; the liquid discharge hole is communicated with the bottom of the liquid collecting groove and the outside of the base.
As a further scheme of the invention: the liquid collecting groove is annular and surrounds the sucking disc.
As a further scheme of the invention: the groove wall and the groove bottom of the liquid collecting groove are arranged at an obtuse angle.
Compared with the prior art, the invention has the beneficial effects that: the ring-shaped oxide layers on the front surface and the back surface can be completely removed in the local polishing process.
The semiconductor wafer polishing device capable of completely removing the ring-shaped oxide layer has an end face polishing state and an edge polishing state, and polishes the end face of the semiconductor wafer first and then polishes the upper surface and the lower surface of the semiconductor wafer. The ring-shaped oxide layer can be completely removed, meanwhile, the semiconductor wafer is not subjected to 'over polishing', and the quality of the semiconductor wafer is effectively improved.
The polishing of the end face and the removal of the annular oxide layers on the front and back surfaces can be realized by clamping the semiconductor wafer once.
And the upper injection pipe and the lower injection pipe respectively inject polishing liquid to the upper surface and the lower surface of the semiconductor wafer when the semiconductor wafer polishing device capable of completely removing the ring-shaped oxide layer performs polishing.
Other features and advantages of the present invention will be disclosed in more detail in the following detailed description of the invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic view of a semiconductor wafer polishing apparatus for completely removing a ring oxide layer according to the present invention;
FIG. 2 is a schematic view showing an internal structure of the semiconductor wafer polishing apparatus of FIG. 1 in which a ring oxide layer is completely removed;
FIG. 3 is a schematic view of an upper polishing mechanism and a lower polishing mechanism of the configuration of FIG. 2;
FIG. 4 is a schematic view of the end face polishing member of the structure of FIG. 3 in contact with the end face of a semiconductor wafer, showing the semiconductor wafer polishing apparatus with the ring oxide layer completely removed in an end face polishing state;
FIG. 5 is a schematic view of the lower polishing member and the upper polishing member of the structure of FIG. 4 in contact with the lower surface and the upper surface of the semiconductor wafer, respectively, showing the semiconductor wafer polishing apparatus in an edge polishing state in which the ring oxide layer is completely removed;
fig. 6 is a schematic view of the structure of fig. 5 in which none of the end face polishing member, the lower polishing member and the upper polishing member is in contact with the semiconductor wafer, showing an initial state of the semiconductor wafer polishing apparatus in which the ring oxide layer is completely removed.
List of reference numerals: the semiconductor wafer polishing device 100 capable of completely removing the ring-shaped oxide layer comprises a base 10, a liquid collecting tank 11, a liquid discharging hole 12, a frame 20, a movable door 21, a closing plate 22, an upper polishing mechanism 30, an ascending and descending hydraulic cylinder 31, an upper motor base 32, an upper motor 33, an upper polishing piece 34, a lower polishing mechanism 40, a lower ascending and descending hydraulic cylinder 41, a lower motor base 42, a lower motor 43, a lower polishing piece 44, an end face polishing mechanism 50, a telescopic hydraulic cylinder 51, a telescopic motor base 52, a telescopic motor 53, an end face polishing piece 54, a sucker 60, a rotating motor 70, an upper injection pipe 81, a lower injection pipe 82 and a semiconductor wafer 200.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 6, in an embodiment of the present invention, a semiconductor wafer polishing apparatus 100 for completely removing a collar oxide layer includes: the polishing machine comprises a base 10, a frame 20, an upper polishing mechanism 30, a lower polishing mechanism 40, an end face polishing mechanism 50, a suction cup 60 and a rotating motor 70. The chuck 60 is used for holding the semiconductor wafer 200. The rotary motor 70 is used to drive the chuck 60 to rotate so as to drive the semiconductor wafer 200 to rotate. The housing 20 is fixed to the upper side of the base 10. The upper polishing mechanism 30 and the end face polishing mechanism 50 are mounted to the frame 20. The lower polishing mechanism 40 and the rotary motor 70 are mounted to the base 10. The diameter of the chuck 60 is smaller than the diameter of the semiconductor wafer 200. The semiconductor wafer 200 is positioned on the chuck 60 and the chuck 60 sucks the middle portion of the semiconductor wafer 200.
The upper polishing mechanism 30 includes: an ascending and descending hydraulic cylinder 31, an upper motor base 32, an upper motor 33 and an upper polishing member 34. The upper polishing member 34 is adapted to contact the upper surface of the semiconductor wafer 200. The ascending and descending hydraulic cylinder 31 drives the upper motor base 32 to move up and down. The ascent and descent hydraulic cylinder 31 is mounted to the frame 20. The upper motor 33 is fixed to the upper motor mount 32. The upper motor 33 drives the upper polishing member 34 to rotate.
The lower polishing mechanism 40 includes: a lower lifting hydraulic cylinder 41, a lower motor base 42, a lower motor 43 and a lower polishing piece 44. The lower polishing member 44 is adapted to contact the lower surface of the semiconductor wafer 200. The lower lifting hydraulic cylinder 41 drives the lower motor base 42 to move up and down. The lower hydraulic lift cylinder 41 is mounted to the base 10. The lower motor 43 is fixed to the lower motor mount 42. The lower motor 43 drives the lower polishing member 44 to rotate.
The end surface polishing mechanism 50 includes: a telescopic hydraulic cylinder 51, a telescopic motor base 52, a telescopic motor 53 and an end face polishing piece 54. The end face polishing member 54 is used for polishing in contact with the end face of the semiconductor wafer 200. The telescopic hydraulic cylinder 51 drives the telescopic motor base 52 to move up and down. A telescopic hydraulic cylinder 51 is mounted to the frame 20. The telescopic motor 53 is fixed to the telescopic motor mount 52. The end face polishing member 54 is driven to rotate by the telescopic motor 53.
The semiconductor wafer polishing apparatus 100 capable of completely removing the ring oxide layer has an end-face polishing state and an edge polishing state.
In the end-face polished state, the end-face polishing member 54 is in contact with the end face of the semiconductor wafer 200, while the lower polishing member 44 and the upper polishing member 34 are not in contact with the semiconductor wafer 200.
In the edge polishing state, the lower polishing member 44 and the upper polishing member 34 are in contact with the lower surface and the upper surface of the semiconductor wafer 200, respectively, while the end surface polishing member 54 is not in contact with the semiconductor wafer 200.
The semiconductor wafer 200 is first polished in an end-face polishing state, and then the edge polishing state is entered to polish the semiconductor wafers 200.
After the end surface polishing state is finished, the telescopic hydraulic cylinder 51 contracts to drive the telescopic motor base 52 to move, so that the end surface polishing piece 54 is far away from the semiconductor wafer 200, and then the lower lifting hydraulic cylinder 41 and the upper lifting hydraulic cylinder 31 respectively drive the lower motor base 42 and the upper motor base 32 to move towards the direction close to the semiconductor wafer 200, so that the lower polishing piece 44 and the upper polishing piece 34 respectively contact the lower surface and the upper surface of the semiconductor wafer 200, so that the edge polishing state is achieved.
The working principle is as follows: the telescopic hydraulic cylinder 51 extends to drive the telescopic motor base 52 to move, so that the end face polishing piece 54 approaches to the semiconductor wafer 200 and contacts with the end face of the semiconductor wafer 200, and the telescopic motor 53 drives the end face polishing piece 54 to rotate, so that the end face polishing piece 54 polishes the end face of the semiconductor wafer 200. After the polishing process is completed in the end-face polishing state, the telescopic hydraulic cylinder 51 is contracted to drive the telescopic motor base 52 to move, so that the end-face polishing member 54 is away from the semiconductor wafer 200. Then, the lower lifting hydraulic cylinder 41 and the lifting hydraulic cylinder 31 respectively drive the lower motor base 42 and the upper motor base 32 to move towards the direction close to the semiconductor wafer 200, so that the lower polishing piece 44 and the upper polishing piece 34 respectively contact with the lower surface and the upper surface of the semiconductor wafer 200, and the lower motor 43 and the upper motor 33 respectively drive the lower polishing piece 44 and the upper polishing piece 34 to rotate, so that the lower polishing piece 44 and the upper polishing piece 34 respectively polish the lower surface and the upper surface of the semiconductor wafer 200. After the polishing process is completed in the edge polishing state, the lower lift cylinder 41 and the lift cylinder 31 respectively drive the lower motor base 42 and the upper motor base 32 to move away from the semiconductor wafer 200, so that the lower polishing member 44 and the upper polishing member 34 are separated from the lower surface and the upper surface of the semiconductor wafer 200, respectively.
Specifically, the end face of the semiconductor wafer 200 is polished first, and then the upper and lower surfaces of the semiconductor wafer 200 are polished.
As a specific embodiment, the semiconductor wafer polishing apparatus 100 capable of completely removing the oxide ring layer has an initial state for loading or unloading the semiconductor wafer 200. In the initial state, none of the lower polishing member 44, the upper polishing member 34, and the end face polishing member 54 contact the semiconductor wafer 200. After the polishing in the edge polishing state is completed, the lower lift cylinder 41 and the upper lift cylinder 31 respectively drive the lower motor base 42 and the upper motor base 32 to move away from the semiconductor wafer 200, so that the lower polishing member 44 and the upper polishing member 34 are respectively separated from contact with the semiconductor wafer 200.
As a specific embodiment, in the end surface polishing state, the upper motor 33 and the lower motor 43 are turned off, and the telescopic motor 53 and the rotary motor 70 are turned on. In the edge polishing state, the telescopic motor 53 is turned off, and the upper motor 33, the lower motor 43, and the rotary motor 70 are in an open state. In the initial state, the upper motor 33, the lower motor 43, the telescopic motor 53, and the rotary motor 70 are turned off.
In one embodiment, the housing 20 is fitted with a moveable door 21 and a plurality of closure panels 22. The movable door 21 is rotatably mounted to the frame 20. A closure plate 22 is secured to the frame 20. The movable door 21 and the closing plate 22 together enclose a closed space. The chuck 60 and the semiconductor wafer 200 sucked by the chuck 60 are located in the closed space.
As a specific embodiment, the semiconductor wafer polishing apparatus 100 capable of completely removing the ring oxide layer further includes an upper spray pipe 81 and a lower spray pipe 82. The upper spray pipe 81 sprays the polishing liquid to the upper surface of the semiconductor wafer 200. The lower spray pipe 82 sprays the polishing liquid to the lower surface of the semiconductor wafer 200. Specifically, the upper and lower spray pipes 81 and 82 spray polishing liquids to the upper and lower surfaces of the semiconductor wafer 200, respectively, when the semiconductor wafer 200 is polished by the semiconductor wafer polishing apparatus 100 capable of completely removing the oxide ring.
In a specific embodiment, the top of the base 10 is formed with a sump 11. The sump 11 serves to collect the polishing solution. The sump 11 is annular and surrounds the suction plate 60. The groove wall and the groove bottom of the liquid collecting groove 11 are arranged in an obtuse angle.
In a specific embodiment, the base 10 is formed with a drain hole 12. The drain hole 12 drains the polishing liquid in the sump 11. The drain hole 12 communicates the bottom of the sump 11 with the outside of the base 10.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A semiconductor wafer polishing apparatus capable of completely removing a ring-shaped oxide layer, comprising: the polishing device comprises a base, a rack, an upper polishing mechanism, a lower polishing mechanism, an end face polishing mechanism, a sucker for adsorbing and fixing a semiconductor wafer and a rotating motor for driving the sucker to rotate so as to drive the semiconductor wafer to rotate; the frame is fixed above the base; the upper polishing mechanism and the end face polishing mechanism are mounted to the frame; the lower polishing mechanism and the rotating motor are mounted to the base; the diameter of the sucker is smaller than that of the semiconductor wafer; the semiconductor wafer is positioned on the sucker, and the sucker adsorbs the middle part of the semiconductor wafer;
go up polishing mechanism includes: the polishing device comprises an ascending and descending hydraulic cylinder, an upper motor base, an upper motor and an upper polishing piece, wherein the upper polishing piece is used for contacting with the upper surface of a semiconductor wafer; the lifting hydraulic cylinder drives the upper motor base to move up and down; the hydraulic lifting cylinder is mounted to the frame; the upper motor is fixed to the upper motor base; the upper motor drives the upper polishing piece to rotate;
the lower polishing mechanism includes: the lower lifting hydraulic cylinder, the lower motor base, the lower motor and a lower polishing piece are used for being in contact with the lower surface of the semiconductor wafer; the lower lifting hydraulic cylinder drives the lower motor base to move up and down; the lower hydraulic lifting cylinder is mounted to the base; the lower motor is fixed to the lower motor base; the lower motor drives the lower polishing piece to rotate;
the end face polishing mechanism includes: the polishing device comprises a telescopic hydraulic cylinder, a telescopic motor base, a telescopic motor and an end face polishing piece, wherein the end face polishing piece is used for polishing by contacting with the end face of a semiconductor wafer; the telescopic hydraulic cylinder drives the telescopic motor base to move up and down; the telescopic hydraulic cylinder is mounted to the frame; the telescopic motor is fixed to the telescopic motor base; the telescopic motor drives the end surface polishing piece to rotate;
the semiconductor wafer polishing device capable of completely removing the ring-shaped oxide layer has an end face polishing state and an edge polishing state;
in the end face polishing state, the end face polishing piece is contacted with the end face of the semiconductor wafer, and the lower polishing piece and the upper polishing piece are not contacted with the semiconductor wafer;
in the edge polishing state, the lower polishing piece and the upper polishing piece are respectively contacted with the lower surface and the upper surface of the semiconductor wafer, and the end surface polishing piece is not contacted with the semiconductor wafer;
polishing the semiconductor wafer in the end face polishing state, and then polishing the semiconductor wafer in the edge polishing state;
after the end face polishing state is finished, the telescopic hydraulic cylinder contracts to drive the telescopic motor base to move so as to enable the end face polishing piece to be far away from the semiconductor wafer, and then the lower lifting hydraulic cylinder and the upper lifting hydraulic cylinder respectively drive the lower motor base and the upper motor base to move towards the direction close to the semiconductor wafer so as to enable the lower polishing piece and the upper polishing piece to respectively contact the lower surface and the upper surface of the semiconductor wafer, so that the edge polishing state is achieved.
2. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 1,
the semiconductor wafer polishing apparatus capable of completely removing the ring oxide layer has an initial state for loading or unloading a semiconductor wafer; in the initial state, the lower polishing member, the upper polishing member and the end face polishing member are not in contact with the semiconductor wafer; after the edge polishing state is finished, the lower lifting hydraulic cylinder and the lifting hydraulic cylinder respectively drive the lower motor base and the upper motor base to move towards the direction far away from the semiconductor wafer, so that the lower polishing piece and the upper polishing piece are respectively separated from the contact with the semiconductor wafer.
3. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 2,
when the end face is in a polished state, the upper motor and the lower motor are closed, and the telescopic motor and the rotating motor are in an open state; when the edge polishing state is achieved, the telescopic motor is closed, and the upper motor, the lower motor and the rotating motor are in an open state.
4. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 3,
in the initial state, the upper motor, the lower motor, the telescopic motor, and the rotary motor are turned off.
5. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 1,
the rack is provided with a movable door and a plurality of closing plates; the movable door is rotatably mounted to the frame; the closure plate is secured to the frame; the movable door and the closing plate enclose a closed space together; the sucker and the semiconductor wafer sucked by the sucker are positioned in the closed space.
6. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 1,
the semiconductor wafer polishing device capable of completely removing the ring-shaped oxide layer further comprises an upper spraying pipe for spraying polishing liquid to the upper surface of the semiconductor wafer and a lower spraying pipe for spraying polishing liquid to the lower surface of the semiconductor wafer.
7. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 6,
and a liquid collecting groove for collecting polishing liquid is formed at the top of the base.
8. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 7,
the base is provided with a liquid discharge hole for discharging the polishing liquid in the liquid collecting tank; the liquid discharge hole is communicated with the bottom of the liquid collecting groove and the outside of the base.
9. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 7,
the liquid collecting groove is annular and surrounds the sucking disc.
10. The semiconductor wafer polishing apparatus capable of completely removing a ring oxide layer as set forth in claim 9,
the groove wall and the groove bottom of the liquid collecting groove are arranged at an obtuse angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210628730.0A CN114700857A (en) | 2022-06-06 | 2022-06-06 | Semiconductor wafer polishing device capable of completely removing ring-shaped oxide layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210628730.0A CN114700857A (en) | 2022-06-06 | 2022-06-06 | Semiconductor wafer polishing device capable of completely removing ring-shaped oxide layer |
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| CN114700857A true CN114700857A (en) | 2022-07-05 |
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| CN202210628730.0A Pending CN114700857A (en) | 2022-06-06 | 2022-06-06 | Semiconductor wafer polishing device capable of completely removing ring-shaped oxide layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115351664A (en) * | 2022-09-02 | 2022-11-18 | 江西安芯美科技有限公司 | Die bonding device for semiconductor wafer |
| CN116276480A (en) * | 2023-04-28 | 2023-06-23 | 浙江台佳电子信息科技有限公司 | Processing device and processing method for optical glass substrate |
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| CN213615632U (en) * | 2020-11-27 | 2021-07-06 | 郑州琦升精密制造有限公司 | Double-sided grinding device for scribing cutter |
| CN214054648U (en) * | 2020-12-26 | 2021-08-27 | 玉溪建福集团机床有限责任公司 | Disc part grinding tool |
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| JP2009072879A (en) * | 2007-09-21 | 2009-04-09 | Toyo Advanced Technologies Co Ltd | End face grinding method and double-side grinding device |
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| CN115351664A (en) * | 2022-09-02 | 2022-11-18 | 江西安芯美科技有限公司 | Die bonding device for semiconductor wafer |
| CN116276480A (en) * | 2023-04-28 | 2023-06-23 | 浙江台佳电子信息科技有限公司 | Processing device and processing method for optical glass substrate |
| CN116276480B (en) * | 2023-04-28 | 2023-11-03 | 浙江台佳电子信息科技有限公司 | Processing device and processing method for optical glass substrate |
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