CN114696807A - PTC control circuit and system - Google Patents
PTC control circuit and system Download PDFInfo
- Publication number
- CN114696807A CN114696807A CN202210424492.1A CN202210424492A CN114696807A CN 114696807 A CN114696807 A CN 114696807A CN 202210424492 A CN202210424492 A CN 202210424492A CN 114696807 A CN114696807 A CN 114696807A
- Authority
- CN
- China
- Prior art keywords
- ptc
- power switch
- resistor
- capacitor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
- G05D23/2451—Details of the regulator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a PTC control circuit and a system, comprising a PTC controller (200), a diode (D1) and a fifth resistor (R5); wherein the first end of the PTC controller (200) is respectively connected with the first end of the fifth resistor (R5) and the PTC circuit (300); a second end of the fifth resistor (R5) is electrically connected with a cathode of the diode (D1) and a second end of the PTC circuit (300) in sequence, and a second end of the PTC controller (200) is connected with an anode of the diode (D1) and a second end of the PTC circuit; the diode is used for offsetting the influence of parasitic inductance (L) generated by a line between the PTC controller and the PTC circuit on the first power switching tube and the second power switching tube.
Description
Technical Field
The present disclosure relates to the field of power electronics, and in particular, to a PTC control circuit and system.
Background
The existing PTC controller circuit realizes the on-off of the PTC circuit and a power supply by controlling a power switch (such as an IGBT/MOSFET/mechanical switch and the like) connected with the PTC circuit in series. In practical applications, the length of the lead from the PTC controller circuit to the PTC circuit is not controllable, which may result in uncontrollable line parasitic inductance. If the line parasitic inductance is too large, device failure, such as IGBT overvoltage breakdown, may be caused during power switch operation.
In addition, in order to operate the PTC circuit more efficiently, high voltage needs to be input during operation, but for automotive applications, a complicated voltage boosting device is also required to generate high voltage, which is disadvantageous for PTC applications. Moreover, a conventional PTC control circuit generally employs a power switch to realize the loading of the PTC by high voltage, and a power switch needs to be replaced when damaged. Meanwhile, the switching frequency of one power switch is fixed, which cannot meet the requirements of different scenes on the switching frequency.
Disclosure of Invention
The invention provides a PTC control circuit and a PTC control system, which can eliminate the risk of damage of a power switch due to parasitic inductance by adding the parasitic inductance of a diode absorption line. And the invention also provides two (or more) power switches, thereby meeting the fault tolerance which makes the power switches have damage. Furthermore, different switch devices can be adopted to respectively set the power switches, so that the requirements of different scenes on switching frequency can be met.
The invention provides a PTC control circuit, comprising: the PTC controller 200, the diode D1, and the fifth resistor R5;
wherein, the first end of the PTC controller 200 is connected to the first end of the fifth resistor R5 and the PTC circuit 300, respectively; a second end of the fifth resistor R5 is electrically connected to a cathode of the diode D1 and a second end of the PTC circuit 300 in sequence, and a second end of the PTC controller 200 is connected to an anode of the diode D1 and a second end of the PTC circuit; wherein, the PTC controller 200 includes: the power supply circuit comprises a first resistor R1, a first capacitor C1, a second resistor R2, a second capacitor C2, a first power switch tube Q1 and a second power switch tube Q2;
a first end of the first resistor R1 is connected to a first end of the first capacitor C1 and the ground, a second end of the first capacitor C1 is connected to the high-voltage power supply HV, a cathode of the diode D1 and a first end of the PTC circuit 300, a second end of the first resistor R1 is connected to a first end of the second resistor R2, an emitter of the first power switch Q1 and an emitter of the second power switch Q2, a second end of the second resistor R2 is connected to a first end of the second capacitor C2, a second end of the second capacitor C2 is connected to a collector of the first power switch Q1, a collector of the second power switch Q2, an anode of the diode D1 and a second end of the PTC circuit 300, a base of the first power switch Q1 is connected to the first driving terminal G1, and a base of the second power switch Q2 is connected to the second driving terminal G2.
The PTC controller circuit further comprises: a third resistor R3, a third capacitor C3, a fourth resistor R4 and a fourth capacitor C4; the first end of the third resistor R3 is connected to the first end of the third capacitor C3 and the second end of the first resistor R1, the second end of the third resistor R3 is connected to the second end of the third capacitor C3 and the base of the first power switch Q1, the first end of the fourth resistor R4 is connected to the first end of the fourth capacitor C4 and the second end of the first resistor R1, and the second end of the fourth resistor R4 is connected to the second end of the fourth capacitor C4 and the base of the second power switch Q2.
The first power switch Q1 is an IGBT or BJT transistor, and the second power switch Q2 is a MOS transistor.
The invention also provides a PTC control system which comprises the PTC control circuit.
In the present invention, there is provided a PTC control circuit comprising: the power switch comprises a PTC controller, a diode and a fifth resistor, wherein the first end of the PTC controller is connected with the first end of the fifth resistor, the second end of the fifth resistor is sequentially electrically connected with the cathode of the diode and the second end of the PTC circuit, the second end of the PTC controller is connected with the anode of the diode and the second end of the PTC circuit, the diode D1 is used for offsetting the influence of a parasitic inductance L generated by a line between the PTC controller and the PTC circuit on the first power switch tube and the second power switch tube, the risk that the power switch tubes are damaged due to the parasitic inductance is eliminated by adding the diode, and the first power switch tube and the second power switch tube are protected. Through the fifth resistor, the fact that the diode is broken down due to high-voltage power supply at the moment when the first power switch tube or the second power switch tube is conducted can also be avoided.
In addition, the first capacitor is pre-charged before the first power switch tube and the second power switch tube are conducted, so that a sufficiently high voltage is provided for the PTC circuit at the moment when the first power switch tube or the second power switch tube is conducted. Furthermore, the structure of two power switching tubes is adopted, redundancy can be provided for the PTC controller, and the trouble that the device is damaged and must be maintained is avoided. Furthermore, the first power switch tube and the second power switch tube adopt different devices, and the application range of the PTC controller is improved by utilizing different switching frequency characteristics of the different devices.
It should be understood that the statements herein reciting aspects are not intended to limit the critical or essential features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following description.
Drawings
The above and other features, advantages and aspects of various embodiments of the present disclosure will become more apparent by referring to the following detailed description when taken in conjunction with the accompanying drawings. The drawings are included to provide a better understanding of the present solution and are not to be construed as limiting the present disclosure. In the drawings, like or similar reference characters designate like or similar elements, and wherein:
fig. 1 shows a block diagram of a PTC control circuit according to the present invention;
fig. 2 shows a schematic circuit diagram of a PTC control circuit according to the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are some, but not all embodiments of the present disclosure. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
In addition, the term "and/or" herein is only one kind of association relationship describing an associated object, and means that there may be three kinds of relationships, for example, a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
The invention provides a PTC control circuit and a PTC control system, which aim to solve the problems in the prior art. Specifically, referring to fig. 1 and 2, the PTC control circuit includes: the PTC controller 200, the diode D1, and the fifth resistor R5;
wherein, the first end of the PTC controller 200 is connected to the first end of the fifth resistor R5 and the PTC circuit 300, respectively; a second end of the fifth resistor R5 is electrically connected to a cathode of the diode D1 and a second end of the PTC circuit 300 in sequence, and a second end of the PTC controller 200 is connected to an anode of the diode D1 and a second end of the PTC circuit; wherein, the PTC controller 200 includes: the power supply circuit comprises a first resistor R1, a first capacitor C1, a second resistor R2, a second capacitor C2, a first power switch tube Q1 and a second power switch tube Q2;
a first end of the first resistor R1 is connected to the first end of the first capacitor C1 and the ground, a second end of the first capacitor C1 is connected to the high-voltage power supply terminal HV, the cathode of the diode D1 and the first end of the PTC circuit 300, a second end of the first resistor R1 is connected to the first end of the second resistor R2, the emitter of the first power switch Q1 and the emitter of the second power switch Q2, a second end of the second resistor R2 is connected to the first end of the second capacitor C2, a second end of the second capacitor C2 is connected to the collector of the first power switch Q1, the collector of the second power switch Q2, the anode of the diode D1 and the second end of the PTC circuit 300, the base of the first power switch Q1 is connected to the first driving terminal G1, and the base of the second power switch Q2 is connected to the second driving terminal G2.
The PTC controller circuit further comprises: a third resistor R3, a third capacitor C3, a fourth resistor R4 and a fourth capacitor C4; the first end of the third resistor R3 is connected to the first end of the third capacitor C3 and the second end of the first resistor R1, the second end of the third resistor R3 is connected to the second end of the third capacitor C3 and the base of the first power switch Q1, the first end of the fourth resistor R4 is connected to the first end of the fourth capacitor C4 and the second end of the first resistor R1, and the second end of the fourth resistor R4 is connected to the second end of the fourth capacitor C4 and the base of the second power switch Q2.
The first power switch Q1 is an IGBT or BJT transistor, and the second power switch Q2 is a MOS transistor.
Next, a specific control method of the PTC control circuit according to the present invention will be described by taking the first power switch Q1 as an IGBT and the second power switch Q2 as a MOS transistor as an example.
Referring to fig. 2, the PTC controller 200 is connected to the PTC circuit using connecting wires, which generate a parasitic inductance L. When the driving signals loaded on the first driving terminal G1 of the first power switch Q1 and the second driving terminal G2 of the second power switch Q2 are suddenly cancelled, the first power switch Q1 and the second power switch Q2 are turned off from on, a loop formed by the high-voltage power supply terminal HV, the parasitic inductor L, PTC circuit 300 and the first resistor R1 is turned off instantaneously, and the parasitic inductor L generates a self-inductance effect due to the instantaneous change of the loop current, so that a large voltage is generated on the inductor. If the diode D1 and the fifth resistor R5 are not provided, the voltage across the parasitic inductor L will be directly applied to the first power switch Q1 or the second power switch Q2, and this large voltage may break down the first power switch Q1 or the second power switch Q2. According to the invention, the diode D1 and the fifth resistor R5 form a loop with the parasitic inductor, and the diode D1 is conducted by the large voltage on the parasitic inductor L, so that the voltage flowing through the parasitic inductor L is reduced, and the first power switch tube Q1 or the second power switch tube Q2 is protected from the impact of the large voltage. Finally, when the voltage of the parasitic inductor L is smaller than the turn-on voltage of the diode D1, the diode D1 is turned off to wait for the next turn-on of the first power switch Q1 or the second power switch Q2. When the diode D1 is turned off and the first power switch Q1 and the second power switch Q2 are also turned off, the fifth resistor R5 can also divide the voltage of the high voltage supply terminal HV, thereby protecting the diode D1.
When the first driving terminal G1 of the first power switch Q1 and the second driving terminal G2 of the second power switch Q2 are not loaded with driving signals, the first power switch Q1 and the second power switch Q2 are turned off and not turned on. At this time, the first capacitor C1 is charged through the high voltage supply terminal HV, and when the first power switch Q1 or the second power switch Q2 is turned on from off, the first capacitor C1 is rapidly discharged, so that the voltage applied to the PTC circuit is raised, and the efficiency of the PTC circuit is improved.
Further, the first power switch Q1 and the second power switch Q2 may be different types of power switches, for example, in this embodiment, the first power switch Q1 is an IGBT, and the second power switch Q2 is a MOS transistor. Compared with an IGBT and an MOS transistor, the IGBT can resist high voltage but has lower switching frequency than the MOS transistor; while MOS transistors have a high switching frequency but a lower withstand voltage than IGBTs. Therefore, the IGBT is suitable for the case of high power and high voltage operation, while the MOS transistor has a high switching frequency, which is suitable for the case where the response sensitivity is more required. In the present invention, the first power switch Q1 and the second power switch Q2 are controlled by independent driving, for example, if only the first power switch Q1 is used, the high voltage power supply terminal HV can form a loop with the PTC circuit 300, the first power switch Q1, and the first resistor R1 as long as the first driving terminal G1 is driven to turn on the first power switch Q1; similarly, if only the second power switch Q2 is used, the high voltage power supply terminal HV can form a loop with the PTC circuit 300, the second power switch Q2 and the first resistor R1 as long as the second driving terminal G2 is driven to turn on the second power switch Q2. Therefore, the power switch tube can be selected to adapt to different application scenarios according to specific needs. It should be appreciated that the described features, structures, or characteristics of the embodiments described above may be combined in any suitable manner in one or more embodiments. The present disclosure may be embodied in other specific forms without departing from its essential characteristics. The present embodiments are to be considered in all respects as illustrative and not restrictive, the scope of the disclosure being defined by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
In the claims and the description the term "comprising" does not exclude other means. Any reference signs in the claims and the description shall not be construed as limiting the scope. The functions of the parts appearing in the claims and the description may be implemented by a single hardware or software module. The mere fact that certain measures are recited in mutually different dependent claims and dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The above detailed description should not be construed as limiting the scope of the disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present disclosure should be included in the scope of protection of the present disclosure.
Claims (5)
1. A PTC control circuit comprising: a PTC controller (200), a diode (D1), and a fifth resistor (R5);
wherein, the first end of the PTC controller (200) is respectively connected with the first end of the fifth resistor (R5) and the PTC circuit (300); the second end of the fifth resistor (R5) is electrically connected with the cathode of the diode (D1) and the second end of the PTC circuit (300) in sequence, and the second end of the PTC controller (200) is connected with the anode of the diode (D1) and the second end of the PTC circuit.
2. The PTC control circuit according to claim 1, wherein the PTC controller (200) comprises: the circuit comprises a first resistor (R1), a first capacitor (C1), a second resistor (R2), a second capacitor (C2), a first power switch tube (Q1) and a second power switch tube (Q2);
wherein, the first end of the first resistor (R1) is connected with the first end of the first capacitor (C1) and the ground, the second end of the first capacitor (C1) is connected with the high-voltage power supply end (HV), the cathode of the diode (D1) and the first end of the PTC circuit (300), the second end of the first resistor (R1) is connected with the first end of the second resistor (R2) and the emitter of the first power switch tube (Q1), the emitter of the second power switch tube (Q2) is connected, the second end of the second resistor (R2) is connected with the first end of the second capacitor (C2), the second end of the second capacitor (C2) is connected with the collector of the first power switch tube (Q1), the collector of the second power switch tube (Q2), the anode of the diode (D1) and the second end of the PTC circuit (300), the base of the first power switch tube (Q1) is connected with the first driving end (G1), and the base of the second power switch tube (Q2) is connected with the second driving end (G2).
3. A PTC control circuit according to claim 2, the PTC controller circuit further comprising: a third resistor (R3), a third capacitor (C3), a fourth resistor (R4) and a fourth capacitor (C4); the first end of the third resistor (R3) is connected with the first end of the third capacitor (C3) and the second end of the first resistor (R1), the second end of the third resistor (R3) is connected with the second end of the third capacitor (C3) and the base of the first power switch tube (Q1), the first end of the fourth resistor (R4) is connected with the first end of the fourth capacitor (C4) and the second end of the first resistor (R1), and the second end of the fourth resistor (R4) is connected with the second end of the fourth capacitor (C4) and the base of the second power switch tube (Q2).
4. A PTC control circuit according to claim 2 or 3, wherein the first power switch transistor (Q1) is an IGBT or BJT transistor and the second power switch transistor (Q2) is a MOS transistor.
5. A PTC control system comprising a PTC control circuit according to any one of claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210424492.1A CN114696807A (en) | 2022-04-21 | 2022-04-21 | PTC control circuit and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210424492.1A CN114696807A (en) | 2022-04-21 | 2022-04-21 | PTC control circuit and system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114696807A true CN114696807A (en) | 2022-07-01 |
Family
ID=82145102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210424492.1A Pending CN114696807A (en) | 2022-04-21 | 2022-04-21 | PTC control circuit and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114696807A (en) |
-
2022
- 2022-04-21 CN CN202210424492.1A patent/CN114696807A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2022119835A1 (en) | Variable current drive for isolated gate drivers | |
| JP4779549B2 (en) | A gate driving circuit of a voltage driven semiconductor element. | |
| US11996833B2 (en) | Drive circuit | |
| US4695770A (en) | Circuit for switching current in an inductive load | |
| CN114696807A (en) | PTC control circuit and system | |
| WO2022183699A1 (en) | Gate electrode voltage passive amplitude-limiting circuit applied to igbt drive control | |
| CN111564144B (en) | Power supply switching control circuit and display device | |
| JP3560274B2 (en) | Method and circuit for driving electric field control type semiconductor device | |
| US10644687B2 (en) | Control device for power semiconductor switch | |
| CN114765361A (en) | Overvoltage protection drive circuit, motor drive circuit and vehicle | |
| JP7247903B2 (en) | Electric circuit and power supply | |
| CN114709109A (en) | Relay slow discharge driving circuit | |
| JP2006050865A (en) | Drive circuit of semiconductor power converter | |
| CN111342650A (en) | Power factor correction circuit and electronic equipment | |
| US20020167826A1 (en) | Method for turning off an insulated gate bipolar transistor and apparatus for carrying out the method | |
| JP2002530823A (en) | Protection system in power modulator to protect connected load | |
| JP2006050776A (en) | Semiconductor switch circuit, power conversion device, inverter device, and air-conditioner | |
| US6329803B1 (en) | Magnetically assisted switch circuit | |
| US20180041115A1 (en) | Modulated power supply | |
| US10530355B1 (en) | Control device for power semiconductor switch | |
| CN218568732U (en) | Control circuit of high-voltage relay, high-voltage relay and power supply system | |
| JP2003133924A (en) | High side switch driving power source | |
| WO2023162032A1 (en) | Gate drive circuit and power conversion device using same | |
| JPH10136637A (en) | Snubber circuit of semiconductor switching device | |
| CN108155895B (en) | Modulation circuit and solid-state pulse modulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |