CN108155895B - Modulation circuit and solid-state pulse modulator - Google Patents
Modulation circuit and solid-state pulse modulator Download PDFInfo
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- CN108155895B CN108155895B CN201611104598.4A CN201611104598A CN108155895B CN 108155895 B CN108155895 B CN 108155895B CN 201611104598 A CN201611104598 A CN 201611104598A CN 108155895 B CN108155895 B CN 108155895B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
Abstract
The invention provides a modulation circuit and a solid-state pulse modulator, wherein a first control circuit and a second control circuit adopt master-slave control and synchronous drive, the problem that each switching tube needs high-voltage isolation drive is solved, and the modulation circuit and the solid-state pulse modulator have good turn-off balance characteristics. When the first feedback branch and the second feedback branch detect that the voltage of the switching tube is greater than the preset value, the feedback branches are switched on, so that the current flows to the control end of the switching tube, the current of the control end of the switching tube is increased until the working point of the switching tube moves to the amplification area of the output characteristic, and the voltage balance of the switching tube is realized. On the basis, the modulation circuit provided by the scheme further comprises a clamping element, and the condition that the interelectrode voltage between the control end and the output end of the switching tube is not damaged by overvoltage is guaranteed. In addition, the modulation circuit provided by the scheme does not adopt a power resistor and a capacitor, so that the overall energy consumption and loss of the modulation circuit are reduced.
Description
Technical Field
The invention relates to the technical field of circuit design, in particular to a modulation circuit and a solid-state pulse modulator.
Background
Solid-state pulse modulators are widely used in various fields such as medical treatment, particle accelerators, radar emission, industrial irradiation and the like. However, solid-state pulse modulators need to operate at high voltages of tens or even hundreds of kilovolts, both in the field of particle accelerators and in the field of radar transmission. Therefore, as shown in fig. 1, the solid-state pulse modulator usually employs a plurality of switches directly connected in series to meet the requirement of use.
However, the maximum operating voltage of each switch is a fixed value, such as 3.3kv, and therefore, in order to ensure the normal operation of each switch, the voltage across each switch needs to be equally distributed. A common voltage equalizing circuit is connected in parallel between the first terminal and the second terminal of the switch as shown in fig. 2. Wherein, is connected in parallel with the switch tube V1And V2R at both endss1And Rs2The voltage-sharing resistor is a static voltage-sharing resistor and plays a role in sharing voltage when dv/dt is small. The dynamic voltage-sharing adopts a typical RCD buffer absorption circuit which is respectively composed of Rd1、Cd1、Vd1And Rd2、Cd2、Vd2The composition has a pressure equalizing function when dv/dt is large. Specifically, when the switch tube is turned off, the power supply passes through the diode Vd1To the capacitor Cd1And charging to suppress the voltage change rate and the peak voltage applied to the switching tube. When the switch tube is conducted, the capacitor Cd1Through a resistance Rd1Discharging, and further limiting the turn-on spike current in the switching tube IGBT.
It can be seen that the RCD network can effectively support dynamic voltage equalization, but the inventors found that the passive devices in the voltage equalizing circuit need to be able to withstand high voltage, and therefore, the method of equalizing the voltage of the switching tube by the additional resistor R and the RCD network causes the cost of the passive components to increase and increases the circuit loss.
Therefore, it is an urgent technical problem to be solved by those skilled in the art to provide a modulation circuit, which has simple circuit structure, low cost and low circuit loss while equalizing voltage.
Disclosure of Invention
In view of this, the present invention provides a modulation circuit, which can achieve voltage equalization of a switching tube, and has a simple circuit structure, low cost and low power consumption.
In order to achieve the purpose, the invention provides the following technical scheme:
a modulation circuit, comprising: the circuit comprises a power supply, a pulse capacitor, a load and at least one modulation subcircuit;
the first output end of the power supply is connected with the first end of the pulse capacitor and the input end of the modulation sub-circuit, and the output end of the modulation sub-circuit is connected with the second end of the pulse capacitor and the second output end of the power supply through the load;
the modulation sub-circuit comprises a first control circuit and at least one second control circuit, the first control circuit comprises a first switch tube and a first feedback branch, the second control circuit comprises a second switch tube and a second feedback branch, and the control end of the first switch tube is electrically connected with the control end of each second switch tube and receives the same driving signal;
the input end of the first feedback branch is connected with the input end of the first switching tube, the output end of the first feedback branch is connected with the control end of the first switching tube, and the first feedback branch is used for conducting the first feedback branch when the voltage of the first switching tube is detected to be greater than a first preset value, so that current flows to the control end of the first switching tube;
the input end of the second feedback branch is connected with the input end of the second switching tube, the output end of the second feedback branch is connected with the control end of the second switching tube, and the second feedback branch is used for conducting the second feedback branch when the voltage of the second switching tube is detected to be greater than a second preset value, so that the current flows to the control end of the second switching tube;
the first switch tube and each second switch tube are connected in series, the input end of the branch circuit after the series connection is used as the input end of the modulation sub-circuit, and the output end of the branch circuit after the series connection is used as the output end of the modulation sub-circuit.
Preferably, the modulation sub-circuit further comprises: a decoupling diode is connected to the first side of the diode,
the control end of the first switch tube is connected with the anode of the decoupling diode, and the cathode of the decoupling diode is connected with the control end of the second switch tube.
Preferably, the first feedback branch comprises: a voltage-stabilizing element for controlling the voltage of the power supply,
the first end of the voltage stabilizing element is connected with the input end of the first switch tube, and the second end of the voltage stabilizing element is connected with the control end of the first switch tube.
Preferably, the voltage stabilizing element comprises at least one zener diode.
Preferably, the first feedback branch further comprises: a first diode;
the first diode is connected in series with the voltage stabilizing element, a branch circuit after the series connection is connected in parallel between the input end of the first switch tube and the control end of the first switch tube, and the first diode is used for preventing the current of the control end of the first switch tube from flowing to the input end of the first switch tube.
Preferably, the first control circuit further includes: the clamping element is provided with a clamping element,
the clamping element is connected in parallel between the output end of the first switch tube and the control end of the first switch tube, and is used for enabling the voltage value between the control end of the first switch tube and the output end of the first switch tube to be not greater than a third preset value.
Preferably, the clamping element includes: a first zener diode and a second zener diode,
the anode of the first voltage stabilizing diode is connected with the anode of the second voltage stabilizing diode, the cathode of the first voltage stabilizing diode is connected with the control end of the first switch tube, and the cathode of the second voltage stabilizing diode is connected with the output end of the first switch tube.
Preferably, the clamping element includes: a first voltage-stabilizing resistor, a second voltage-stabilizing resistor,
the first end of the first voltage-stabilizing resistor is connected with the control end of the first switch tube, and the second end of the first voltage-stabilizing resistor is connected with the output end of the first switch tube.
Preferably, the first switch tube and the second switch tube are both insulated gate bipolar transistors.
A solid state pulse modulator comprising any of the above modulation circuits.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
the control end of the first switch tube in the modulation circuit is electrically connected with the control end of each second switch tube and receives the same driving signal.
When the first feedback branch detects that the voltage of the first switch tube is greater than a first preset value, the first feedback branch is conducted to enable current to flow to the control end of the first switch tube, and when the second feedback branch detects that the voltage of the second switch tube is greater than a second preset value, the second feedback branch is conducted to enable current to flow to the control end of the second switch tube, so that the current of the control end of the switch tube is increased until the working point of the switch tube moves to an amplification area of an output characteristic, and voltage balance of the switch tube is achieved.
On the basis, the modulation circuit provided by the scheme further comprises a clamping element, and the condition that the interelectrode voltage between the control end and the output end of the switching tube is not damaged by overvoltage is guaranteed. In addition, the modulation circuit provided by the scheme does not adopt a power resistor and a capacitor, so that the overall loss of the modulation circuit is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art modulation circuit;
FIG. 2 is a schematic diagram of a voltage equalizer circuit in the prior art;
fig. 3 is a schematic structural diagram of a modulation circuit provided in this embodiment;
fig. 4 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment;
fig. 5 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment;
fig. 6 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment;
fig. 7 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment;
fig. 8 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment;
fig. 9 is a schematic diagram of another specific structure of a modulation circuit provided in this embodiment.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a modulation circuit and a solid-state pulse modulator, wherein a first control circuit and a second control circuit adopt master-slave control and synchronous drive, the problem that each switching tube needs high-voltage isolation drive is solved, and the modulation circuit and the solid-state pulse modulator have good turn-off balance characteristics. When the first feedback branch and the second feedback branch detect that the voltage of the switching tube is greater than the preset value, the feedback branches are switched on, so that the current flows to the control end of the switching tube, the current of the control end of the switching tube is increased until the working point of the switching tube moves to the amplification area of the output characteristic, and the voltage balance of the switching tube is realized. On the basis, the modulation circuit provided by the scheme further comprises a clamping element, and the condition that the interelectrode voltage between the control end and the output end of the switching tube is not damaged by overvoltage is guaranteed. In addition, the modulation circuit provided by the scheme does not adopt a power resistor and a capacitor, so that the overall energy consumption and loss of the modulation circuit are reduced.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a modulation circuit according to the present embodiment. The modulation circuit comprises a power supply E, a pulse capacitor C, a load 2 and at least one modulation sub-circuit 1.
The specific circuit connection relationship is as follows:
a first output end of the power supply E is connected to a first end of the pulse capacitor C and an input end of the modulation sub-circuit 1, and an output end of the modulation sub-circuit 1 is connected to a second end of the pulse capacitor C and a second output end of the power supply E through the load 2;
the modulation sub-circuit 1 comprises a first control circuit 10 and at least one second control circuit 20, the first control circuit 10 comprises a first switching tube IGBT2 and a first feedback branch 101, the second control circuit 20 comprises a second switching tube IGBT1 and a second feedback branch 102, and a control end of the first switching tube IGBT2 is electrically connected with a control end of each second switching tube IGBT1 and receives the same driving signal;
the input end of the first feedback branch 101 is connected to the input end of the first switching tube IGBT2, and the output end of the first feedback branch is connected to the control end of the first switching tube IGBT2, so that when it is detected that the voltage of the first switching tube IGBT2 is greater than a first preset value, the first feedback branch 101 is turned on, and current flows to the control end of the first switching tube IGBT 2;
the input end of the second feedback branch 102 is connected to the input end of the second switching tube IGBT1, and the output end of the second feedback branch is connected to the control end of the second switching tube IGBT1, so that when it is detected that the voltage of the second switching tube IGBT1 is greater than a second preset value, the second feedback branch 102 is turned on, and current flows to the control end of the second switching tube IGBT 1;
the first switching tube IGBT2 and each second switching tube IGBT1 are connected in series, and the input end of the branch circuit after series connection is used as the input end of the modulation sub-circuit 1, and the output end of the branch circuit after series connection is used as the output end of the modulation sub-circuit 1.
In the present embodiment, the circuit structures of the first control circuit 10 and the second control circuit 20 are completely the same, and the circuit structures and principles of the first feedback branch and the second feedback branch are also the same, so for the sake of distinction, they are named as the first control circuit and the second control circuit, and the switching tube preferably uses an IGBT tube. Referring to fig. 4, the voltage-sharing principle of the modulation circuit provided in this embodiment is as follows: the feedback branches (the first feedback branch and the second feedback branch) measure the collector-emitter voltage and feed back the voltage to the control end (i.e. the gate of the switching tube) of the switching tube through one feedback branch (including the first feedback branch and the second feedback branch, wherein the feedback branch may include a voltage stabilizing element). When the collector-emitter voltage exceeds the avalanche breakdown voltage of the voltage stabilizing element, current flows into the gate through the coupling effect, so that the gate voltage is raised, and the collector current is increased until the operating point moves to the amplification region of the output characteristic.
The above describes that the first feedback branch and the second feedback branch have the same structure and principle, and now the first feedback branch is taken as an example to describe the working principle and the circuit composition thereof. The specific implementation circuit of the feedback branch can be as shown in fig. 5, that is, the feedback branch includes: and a first end of the voltage stabilizing element Z is connected with the input end of the first switching tube, and a second end of the voltage stabilizing element Z is connected with the control end of the first switching tube. Optionally, the voltage stabilizing element may be a voltage stabilizing diode, or may be a series branch of the voltage stabilizing diode, or may be another circuit structure having a voltage stabilizing function.
In addition, the first feedback branch further comprises: and the first diode Ds is connected with the voltage stabilizing element in series, a branch circuit after the series connection is connected between the input end of the first switch tube and the control end of the first switch tube in parallel, and the first diode Ds is used for preventing the current of the control end of the first switch tube from flowing to the input end of the first switch tube.
In summary, the feedback branch comprises a voltage stabilizing element Z and a first diode Ds, wherein the first diode Ds prevents current from flowing from the driver circuit to the collector during the turn-on of the IGBT.
On the basis of the above embodiments, please refer to fig. 6, which is a flowchart illustrating a master-slave control principle of the modulation circuit provided in this embodiment, as follows:
the lower switching tube is provided with a complete driving circuit, comprising an auxiliary power supply and an isolated control pulse input. The driving circuit of the above switching tube has no other components except for the output stage. The decoupling between the master and slave switches is undertaken by a high voltage tolerant diode. Once the potential from the switch emitter drops to the point where the decoupling diode can turn on, it is turned on. When the decoupling diode is cut off, the slave switch is turned off, and good turn-off balance is further ensured. It should be noted that several slave switches may be connected in multiple stages.
Preferably, as shown in fig. 7, the first control circuit further includes: a clamping element.
The clamping element is connected in parallel between the output end of the first switch tube and the control end of the first switch tube, and is used for enabling the voltage value between the control end of the first switch tube and the output end of the first switch tube to be not greater than a third preset value.
Alternatively, as shown in fig. 8, the clamping element includes: a first zener diode and a second zener diode,
the anode of the first voltage stabilizing diode is connected with the anode of the second voltage stabilizing diode, the cathode of the first voltage stabilizing diode is connected with the control end of the first switch tube, and the cathode of the second voltage stabilizing diode is connected with the output end of the first switch tube.
Or, the clamping element may be a first voltage-stabilizing resistor, wherein a first end of the first voltage-stabilizing resistor is connected to the control end of the first switch tube, and a second end of the first voltage-stabilizing resistor is connected to the output end of the first switch tube.
Specifically, the operating principle of the modulation circuit provided in fig. 8 is as follows:
before the IGBT is conducted, the voltage of the IGBT collector electrode is fed back to the grid electrode through the voltage stabilizing element and the diode, and the voltage stabilizing element and the diode and the grid electrode clamping part form an IGBT static voltage equalizing circuit; after a driving signal is applied to the gate of the IGBT2, the IGBT2 is turned on and the IGBT1 is also turned on simultaneously due to the master-slave principle; the IGBT2 turns off, the IGBT1 also turns off at the same time; after the IGBT is switched on, if the collector-emitter voltage exceeds the avalanche breakdown voltage of the voltage stabilizing element, current flows into the grid under the coupling action, so that the grid voltage is improved, the collector current is increased until the working point moves to an amplification area of the output characteristic, and the effect of dynamic voltage sharing is achieved.
The grid clamping part is used for protecting the voltage between the grid electrode and the emitter electrode of the IGBT from overvoltage damage, and the grid clamping part can be formed by reversely connecting two voltage stabilizing diodes (as shown in figure 8), or only replacing one resistor, or other circuits capable of achieving the protection function.
It should be noted that, assuming that the voltage of the high-voltage dc power supply is 2 kv, the IGBT is a 1200V withstand voltage class IGBT, the divided voltage of each IGBT is 1 kv, the avalanche breakdown voltage selected by the voltage stabilizing units Z10 and Z11 is 1 kv, and the IGBT driving voltage class is designed to be 15V, the gate clamping elements Z1, Z2, Z3, and Z4 can select 18V (slightly higher than 15V), and the main diode D5 needs to select a fast diode with a withstand voltage of 1000V or more. Of course, the embodiment is only for illustration, and those skilled in the art can select the types of the switch tube and the diode according to the actual design requirement, and the invention is not limited to the above examples.
The circuit is a circuit form of a solid-state pulse modulator with two IGBTs connected in series, and because the rapid high-voltage diode D5 has junction voltage drop, if the number of the IGBTs connected in series is too large, the driving voltage of the last IGBT in the IGBTs can be reduced inevitably, so that the circuit in the figure 9 can be adopted, and the problem of multiple series connections is solved.
In fig. 9, each two IGBT series circuits are designed as one component (or a plurality of IGBT series circuits are designed as one component), and then a plurality of components are connected in series, and the driving signals are synchronously driven, so that the purpose of connecting more IGBTs in series is achieved, and the pulse modulator operates at a higher voltage level.
In addition, the present embodiment provides a solid-state pulse modulator including any one of the above modulation circuits.
In summary, the control end of the first switch tube in the modulation circuit provided by the present invention is electrically connected to the control end of each of the second switch tubes, and receives the same driving signal, and it can be seen that the first control circuit and the second control circuit in the present disclosure adopt master-slave control and synchronous driving, thereby solving the problem that each switch tube needs high-voltage isolation driving, and having better turn-off balance characteristic.
When the first feedback branch detects that the voltage of the first switch tube is greater than a first preset value, the first feedback branch is conducted to enable current to flow to the control end of the first switch tube, and when the second feedback branch detects that the voltage of the second switch tube is greater than a second preset value, the second feedback branch is conducted to enable current to flow to the control end of the second switch tube, so that the current of the control end of the switch tube is increased until the working point of the switch tube moves to an amplification area of an output characteristic, and voltage balance of the switch tube is achieved.
On the basis, the modulation circuit provided by the scheme further comprises a clamping element, and the condition that the interelectrode voltage between the control end and the output end of the switching tube is not damaged by overvoltage is guaranteed. In addition, the modulation circuit provided by the scheme does not adopt a power resistor and a capacitor, so that the overall loss of the modulation circuit is reduced.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A modulation circuit, comprising: the circuit comprises a power supply, a pulse capacitor, a load and at least one modulation subcircuit;
the first output end of the power supply is connected with the first end of the pulse capacitor and the input end of the modulation sub-circuit, and the output end of the modulation sub-circuit is connected with the second end of the pulse capacitor and the second output end of the power supply through the load;
the modulation sub-circuit comprises a first control circuit and at least one second control circuit, the first control circuit comprises a first switch tube and a first feedback branch, the second control circuit comprises a second switch tube and a second feedback branch, and the control end of the first switch tube is electrically connected with the control end of each second switch tube and receives the same driving signal;
the input end of the first feedback branch is connected with the input end of the first switching tube, the output end of the first feedback branch is connected with the control end of the first switching tube, and the first feedback branch is used for conducting the first feedback branch when the voltage of the first switching tube is detected to be greater than a first preset value, so that current flows to the control end of the first switching tube;
the input end of the second feedback branch is connected with the input end of the second switching tube, the output end of the second feedback branch is connected with the control end of the second switching tube, and the second feedback branch is used for conducting the second feedback branch when the voltage of the second switching tube is detected to be greater than a second preset value, so that the current flows to the control end of the second switching tube; the first feedback branch and the second feedback branch have the same structure and are composed of voltage stabilizing diodes;
the first switch tube and each second switch tube are connected in series, the input end of the branch circuit after the series connection is used as the input end of the modulation sub-circuit, and the output end of the branch circuit after the series connection is used as the output end of the modulation sub-circuit.
2. The modulation circuit of claim 1, wherein the modulation subcircuit further comprises: a decoupling diode is connected to the first side of the diode,
the control end of the first switch tube is connected with the anode of the decoupling diode, and the cathode of the decoupling diode is connected with the control end of the second switch tube.
3. The modulation circuit of claim 1, wherein the first feedback branch comprises: a voltage-stabilizing element for controlling the voltage of the power supply,
the first end of the voltage stabilizing element is connected with the input end of the first switch tube, and the second end of the voltage stabilizing element is connected with the control end of the first switch tube.
4. The modulation circuit according to claim 3, wherein the voltage stabilizing component comprises at least one voltage stabilizing diode.
5. The modulation circuit of claim 3, wherein the first feedback branch further comprises: a first diode;
the first diode is connected in series with the voltage stabilizing element, a branch circuit after the series connection is connected in parallel between the input end of the first switch tube and the control end of the first switch tube, and the first diode is used for preventing the current of the control end of the first switch tube from flowing to the input end of the first switch tube.
6. The modulation circuit of claim 1, wherein the first control circuit further comprises: the clamping element is provided with a clamping element,
the clamping element is connected in parallel between the output end of the first switch tube and the control end of the first switch tube, and is used for enabling the voltage value between the control end of the first switch tube and the output end of the first switch tube to be not greater than a third preset value.
7. The modulation circuit of claim 6, wherein the clamping element comprises: a first zener diode and a second zener diode,
the anode of the first voltage stabilizing diode is connected with the anode of the second voltage stabilizing diode, the cathode of the first voltage stabilizing diode is connected with the control end of the first switch tube, and the cathode of the second voltage stabilizing diode is connected with the output end of the first switch tube.
8. The modulation circuit of claim 6, wherein the clamping element comprises: a first voltage-stabilizing resistor, a second voltage-stabilizing resistor,
the first end of the first voltage-stabilizing resistor is connected with the control end of the first switch tube, and the second end of the first voltage-stabilizing resistor is connected with the output end of the first switch tube.
9. The modulation circuit of claim 1, wherein the first switch tube and the second switch tube are insulated gate bipolar transistors.
10. A solid state pulse modulator comprising a modulation circuit according to any of claims 1-9.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741361A (en) * | 2009-11-13 | 2010-06-16 | 清华大学 | Slope and peak integrated control circuit for insulated gate bipolar transistor |
| CN102290969A (en) * | 2011-07-29 | 2011-12-21 | 清华大学 | Voltage sharing control circuit for series operation of insulated gate bipolar transistors |
| WO2012120271A1 (en) * | 2011-03-07 | 2012-09-13 | Amantys Ltd | Voltage balancing for power switching devices |
| CN102931822A (en) * | 2012-11-16 | 2013-02-13 | 清华大学 | Main circuit pulse based active voltage-equalizing device for high voltage IGBTs (Insulated Gate Bipolar Transistors) in series connection |
| CN102983712A (en) * | 2012-11-28 | 2013-03-20 | 清华大学 | Electromagnetic transient analysis method for large-capacity power-electron conversion system |
| CN202940722U (en) * | 2012-11-30 | 2013-05-15 | 南京南瑞继保电气有限公司 | Dynamic/static voltage-sharing circuit with voltage overshoot threshold limit for series connection of IGBTs |
| CN104967292A (en) * | 2015-06-29 | 2015-10-07 | 国网智能电网研究院 | Active uniform pressure control method for IGBT series connection valve segment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101984546B (en) * | 2010-02-05 | 2013-03-06 | 深圳市科陆变频器有限公司 | Power switching device series voltage-limiting circuit |
| CN104038044A (en) * | 2014-05-20 | 2014-09-10 | 广东美的暖通设备有限公司 | IGBT buffer circuit, PFC circuit and air conditioner control system |
| CN104579279A (en) * | 2015-01-20 | 2015-04-29 | 华北电力大学（保定） | Optical fiber trigger type high-voltage solid-state switch |
-
2016
- 2016-12-05 CN CN201611104598.4A patent/CN108155895B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741361A (en) * | 2009-11-13 | 2010-06-16 | 清华大学 | Slope and peak integrated control circuit for insulated gate bipolar transistor |
| WO2012120271A1 (en) * | 2011-03-07 | 2012-09-13 | Amantys Ltd | Voltage balancing for power switching devices |
| CN102290969A (en) * | 2011-07-29 | 2011-12-21 | 清华大学 | Voltage sharing control circuit for series operation of insulated gate bipolar transistors |
| CN102931822A (en) * | 2012-11-16 | 2013-02-13 | 清华大学 | Main circuit pulse based active voltage-equalizing device for high voltage IGBTs (Insulated Gate Bipolar Transistors) in series connection |
| CN102983712A (en) * | 2012-11-28 | 2013-03-20 | 清华大学 | Electromagnetic transient analysis method for large-capacity power-electron conversion system |
| CN202940722U (en) * | 2012-11-30 | 2013-05-15 | 南京南瑞继保电气有限公司 | Dynamic/static voltage-sharing circuit with voltage overshoot threshold limit for series connection of IGBTs |
| CN104967292A (en) * | 2015-06-29 | 2015-10-07 | 国网智能电网研究院 | Active uniform pressure control method for IGBT series connection valve segment |
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