CN114695336A - 芯片封装结构 - Google Patents
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Abstract
一种芯片封装结构,包含:至少一半导体芯片,具有信号处理功能;一底材,其中半导体芯片设置于底材上;至少一热传贴片,设置于该底材上;以及一封装材料,封装底材、该热传贴片以及以及半导体芯片,其中热传贴片形成至少一热传路径。
Description
技术领域
本发明涉及一种芯片封装结构,特别涉及一种在底材上贴附热传贴片及/或铜柱,以加强热传效果的芯片封装结构。
背景技术
现有技术中,参照图1,其显示韩国专利案KR 101271374的芯片封装结构,底材110为一硅材料所制作。为了导热效果,在底材上设置许多凹槽220,以增加散热面积。此制作过程需经过光罩腐蚀等过程,制作复杂。此外,需移除的热易积聚在凹槽220内,其散热效果增加有限。
参照图2,其显示美国专利案US 8202765的芯片封装结构。图2中芯片CH经由导热材料220连接至外盖210,如此芯片CH所产生的热从导热材料220、外盖210传递至芯片封装结构外。然而,此设计有几个缺点:1.外盖220与芯片之间的空间会积聚废热,导致芯片CH温度升高。2.外盖220为另外工艺所制作,其尺寸因制成而有所限制,不适用于小尺寸的芯片封装。
针对现有技术的缺点,本发明提供具有高效率散热功能的一芯片封装技术,此技术具有过程简单、制造容易、成本低、不受尺寸限制的优点。
发明内容
为了提供高效率散热功能,根据一个观点,本发明提供了一种芯片封装结构,包含:至少一半导体芯片,具有信号处理功能;一底材,半导体芯片设置于底材上;至少一热传贴片,设置于该底材上;以及一封装材料,封装底材、该热传贴片及/或半导体芯片;其中该热传贴片形成至少一热传路径。
半导体芯片所产生的热量,其主要为经由底材以及封装材料传递至芯片封装结构外。若仅通过底材以及封装材料,其传递热效果常不足。本发明所提供的无信号处理或传递功能的铜柱或热传贴片贴附于底材上的设计,通过简单的设计以提供经由铜柱或热传贴片的热传路径,可大幅提升芯片封装结构的散热效果。
一实施例中,底材包含一引线框架(Lead frame)、或一基板(Substrate)。
一实施例中,芯片封装结构还包含至少一铜柱(Copper pillar),设置于该底材上,且由该封装材料所封装,用以形成至少一热传路径,其中该铜柱不具有信号传输功能,且该铜柱的热传系数高于该封装材料。
一实施例中,芯片封装结构,可应用于倒装芯片封装(Flip chip package)、平面网格阵列封装(Land grid array,LGA)、或外露式芯片封装(Die exposed package)。
一实施例中,封装材料可包含一封装复合材料(Molding compound)或一陶瓷材料。
一实施例中,以底材的法线方向观察,热传贴片与半导体芯片的投影范围为彼此重叠或不重叠。
此外,本发明的芯片封装结构中,可不受限于一个热传贴片。其中,为加强热传效果,热传贴片中至少一部份通过打线(Wire bonding)彼此连接,以增强热传贴片间的热传效果。
一实施例中,半导体芯片包含多个焊垫,焊垫中包含信号传递功能焊垫与无信号传递功能焊垫,铜柱连接信号传递功能焊垫与无信号传递功能焊垫中至少一部份。
一实施例中,热传贴片的厚度越厚,热传贴片的散热效果越高。
一实施例中,至少一热传贴片与铜柱,可通过打线或半导体芯片的至少一焊垫彼此相连。
前述的封装材料包含一封装复合材料(Molding compound)或一陶瓷材料。
一实施例中,半导体芯片包含具线路运算功效以产生热量的元件,例如芯片或主动元件等。
一实施例中,本发明的芯片封装结构,可应用于平面网格阵列封装(Land gridarray,LGA)、引线框架封装(Lead frame package)、倒装芯片封装(Flip chip package)、外露式芯片封装(Die exposed package)。
一实施例中,该铜柱连接至一接地电位焊垫。
一实施例中,该热传贴片的一顶面裸露出于该封装材料之外。
一实施例中,该芯片封装结构包含多个该热传贴片,且多个该热传贴片具有相同高度。
以下通过具体实施例详加说明,会更容易了解本发明的目的、技术内容、特点及其所实现的功效。
附图说明
图1至图2显示现有技术中芯片封装结构的示意图。
图3A、图3B、图4与图5显示根据本发明多个实施例的芯片封装结构的示意图。
图中符号说明
10:芯片封装结构
50:半导体芯片
55:铜柱
100:封装材料
110:底材
115:热传贴片
120:线材
220:凹槽
210:外盖
220:导热材料
CH:芯片
N:法线方向
具体实施方式
本发明中的附图均属示意,主要意在表示各元件组成部分间的相互关系,至于形状与尺寸则并未依照比例绘制。
为了提供高效率散热功能,根据一个观点,参照图3A与图3B,图3A为未进行封装前的态样示意图,图3B为封装材料进行封装后的态样示意图。其中,本发明提供了一种芯片封装结构10,其包含:至少一半导体芯片50,具有信号处理功能,选择性具有至少一铜柱55(Copper pillar),图式中以三个铜柱55为例进行说明,然本发明的铜柱55不限于此数量,其可依散热需要而定,例如无铜柱、一或更多个铜柱;一底材110,半导体芯片50设置于底材110上,其中底材110上可设置铜柱55以热接触半导体芯片50、或设置至少一热传贴片115(图式中以两个热传贴片115为例进行说明,本发明的热传贴片115不限于此数量,例如无热传贴片、一或更多个热传贴片);以及一封装材料100,封装底材110、热传贴片115、铜柱55及/或半导体芯片50。其中热传贴片115与铜柱55的热传系数,高于封装材料(1至4W/(mK))。其中热传贴片115例如由一含硅材料(约117W/(mK))或一含铜材料(约385W/(mK))所制作。如此,在封装材料100中,热传贴片115或铜柱50的高热传系数,具有形成至少一热传路径的效果。
传统技术中,底材110上除了设置半导体芯片50、信号接点外,空余空间常为封装材料100所覆盖。本发明充分利用底材110上空余空间,设置不具有信号处理或传输功能的至少一热传贴片115及/或铜柱,以加强芯片封装结构10的散热。使用一般封装材料时,其散热效果仍属一般、有时甚至散热不足,需通过其他方式主动加强散热,这些主动加强散热元件十分耗能与占据空间。此外,除了一般装复合材料(Molding compound),封装材料100可使用一陶瓷材料。
一实施例中,半导体芯片50为运算过程中会产生热量的元件,包含电路或主动元件等。当半导体芯片50产生高热时,根据本发明所提供的这些热传路径,可大幅地提高芯片封装结构10的散热效率。此外,本发明所提供的铜柱55或热传贴片115的技术,可各别仅应用铜柱55或热传贴片115于芯片封装结构10中,或两者兼用于芯片封装结构10中,其端视需要而定。
一实施例中,此铜柱55可例如为半导体芯片50上设置锡球中所使用的铜柱(Copper pillar),本发明为通过习知封装技术,更进一步发挥铜柱55的高散热效果,以加强芯片封装结构10的散热效果。
一实施例中,底材110提供半导体芯片50的设置位置以及相关的线路功能。底材可包含一引线框架(Lead frame)、或一基板(Substrate)。
一实施例中,本发明的芯片封装结构,可应用于倒装芯片封装(Flip chippackage)、平面网格阵列封装(Land grid array,LGA)、或外露式芯片封装(Die exposedpackage)等。参照图4,其中外露式芯片封装中,芯片50的顶面为裸露于封装材料100之外,本发明的芯片封装结构亦可应用于此种封装设计。
一实施例中,以底材的法线方向观察,至少一热传贴片与至少一半导体芯片的投影范围可为彼此重叠或不重叠。例如,参照图3A,热传贴片115与半导体芯片50为分开设置在底材110上。于底材110的法线方向N上观察,热传贴片115与半导体芯片50的投影范围为彼此不重叠。然而,若需要,热传贴片115可设置于底材110的两侧,甚至于底材的法线方向N观之,一部分的热传贴片115与半导体芯片50的投影范围可重叠。
根据另一观点,热传贴片与铜柱的热传系数远高于封装材料,故热传贴片于封装材料中形成异材质的高热传路径。以宏观方式讨论,热传贴片提高芯片封装结构中的平均热传系数,故具有提高热传效能的效果。
一实施例中,包含多个热传贴片115的芯片封装结构10中,为加强热传效果,热传贴片115中至少一部份可通过打线(Wire bonding)彼此连接,以增强热传贴片115间的热传效果。如图5所示,其中热传贴片115间通过线材120连接,较佳为具高热传系数材质的线材120连接。
一实施例中,半导体芯片50包含多个焊垫(Pad),依工艺不同,焊垫有各种材质的选择,例如铝焊垫或铜焊垫等。半导体芯片50的焊垫中包含至少一信号传递功能焊垫与至少一无信号传递功能焊垫,信号传递功能焊垫用于收发信号,铜柱可连接信号传递功能焊垫与无信号传递功能焊垫中至少一部份。
一实施例中,芯片封装结构10的热阻反相关于高热传贴片115的厚度。其中,热阻是热管理技术中很重要的设计参数,定义为
R=ΔT/P
其中ΔT为温度差,P为芯片的热消耗。热阻R代表元件热传的难易度,热阻越大,元件的散热效果越差,如果热阻越小,则代表元件越容易散热。也就是说,热传贴片115的厚度越厚,的散热效果越高。当芯片封装结构中的热传贴片115的厚度越厚,则通过热传贴片115散热后,半导体芯片50的温度越低。用户可依照半导体芯片50所需的温度,设计热传贴片115的数量与厚度,以调整半导体芯片50的温度。
一实施例中,至少一热传贴片与铜柱,可通过打线或半导体芯片的至少一焊垫彼此相连,以加强散热效果。
一实施例中,半导体芯片50以倒装芯片(flip chip)方式设置于底材110上,且具有至少一铜柱55。在其中一种实施方式中,铜柱55连接至一接地电位焊垫,其中该接地电位焊垫电连接至接地电位。在其中一种实施方式中,芯片封装结构10包含多个热传贴片115,且多个热传贴片115具有相同高度。
一实施例中,热传贴片155的一顶面裸露出于封装材料100之外。也就是说,在此实施例中,封装材料100并未完全包覆热传贴片155,而使热传贴片155的顶面露出。
简言之,本发明通过简单的铜柱或热传贴片,就可达到增强芯片封装结构的散热效果。重要地,此技术不会增加芯片封装结构的尺寸,也不受限于芯片封装结构的大小,都可应用本发明的技术,以达到增强芯片封装结构的散热效果。
以上已针对实施例来说明本发明,但以上所述,仅为使本领域技术人员易于了解本发明的内容,并非用来限定本发明的权利范围。在本发明的相同精神下,本领域技术人员可以想到各种等效变化。
Claims (15)
1.一种芯片封装结构,包含:
至少一半导体芯片,具有信号处理功能;
一底材,该半导体芯片设置于该底材上;
至少一热传贴片,设置于该底材上;以及
一封装材料,封装该底材、该热传贴片及/或该至少一半导体芯片;
其中该热传贴片形成至少一热传路径。
2.如权利要求1所述的芯片封装结构,其中,该底材的结构包含一引线框架或一基板。
3.如权利要求1所述的芯片封装结构,其中,还包含至少一铜柱,设置于该底材上,且由该封装材料所封装,用以形成至少一热传路径,其中,该铜柱不具有信号传输功能,且该铜柱的热传系数高于该封装材料。
4.如权利要求1所述的芯片封装结构,应用于倒装芯片封装、平面网格阵列封装、或外露式芯片封装。
5.如权利要求1所述的芯片封装结构,其中,该封装材料包含一封装复合材料或一陶瓷材料。
6.如权利要求1所述的芯片封装结构,其中,该热传贴片的热传系数,高于该封装材料。
7.如权利要求1所述的芯片封装结构,其中,该热传贴片为一含硅材料或一含铜材料所制作。
8.如权利要求1所述的芯片封装结构,其中,以该底材的法线方向观察,该至少一热传贴片与该至少一半导体芯片的投影范围为彼此不重叠。
9.如权利要求1所述的芯片封装结构,其中,包含多个热传贴片,该些热传贴片中至少一部份通过打线彼此连接。
10.如权利要求3所述的芯片封装结构,其中,该半导体芯片又包含至少一信号传递功能焊垫与至少一无信号传递功能焊垫,且该铜柱连接该信号传递功能焊垫及/或该无信号传递功能焊垫。
11.如权利要求1所述的芯片封装结构,其中,该芯片封装结构的一热阻反相关于该热传贴片的厚度。
12.如权利要求3所述的芯片封装结构,其中,该至少一热传贴片与该铜柱,可通过打线或该半导体芯片的至少一焊垫彼此相连。
13.如权利要求3所述的芯片封装结构,其中,该铜柱连接至一接地电位焊垫。
14.如权利要求1所述的芯片封装结构,其中,该热传贴片的一顶面裸露出于该封装材料之外。
15.如权利要求1所述的芯片封装结构,其中,该芯片封装结构包含多个该热传贴片,且多个该热传贴片具有相同高度。
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