CN114672780B

CN114672780B - Wafer tray and wafer sputtering equipment

Info

Publication number: CN114672780B
Application number: CN202210287197.6A
Authority: CN
Inventors: 洪俊
Original assignee: Hefei Qizhong Technology Co ltd; Chipmore Technology Corp Ltd
Current assignee: Hefei Qizhong Technology Co ltd; Chipmore Technology Corp Ltd
Priority date: 2022-03-22
Filing date: 2022-03-22
Publication date: 2023-09-19
Anticipated expiration: 2042-03-22
Also published as: CN114672780A

Abstract

The invention discloses a wafer tray and wafer sputtering equipment, wherein the wafer tray comprises: the tray body is provided with a wafer positioning groove which is arranged upwards and is used for positioning a wafer; the outer anti-splash groove is arranged on the tray body and positioned beside the wafer positioning groove, and is wound outside the wafer positioning groove in an arc shape; the baffle piece is oppositely arranged between the outer anti-splash groove and the wafer positioning groove. According to the invention, the outer anti-splash groove is arranged on the side of the wafer positioning groove on the wafer tray, when the wafer tray bears the wafer to the film plating process cavity, the formed film layer is formed in the outer anti-splash groove, and when the plasma bypasses the gap part to bombard the metal film in the outer anti-splash groove in the etching process, bombarded ions are generally directly deposited on the side wall of the outer anti-splash groove, so that the occurrence of ion sputtering deposited on the wafer tray to the upper surface of the wafer is effectively avoided, and the quality of film plating is improved.

Description

Wafer tray and wafer sputtering equipment

Technical Field

The invention relates to the technical field of plasma etching technology and wafer vacuum coating, in particular to a wafer tray and wafer sputtering equipment.

Background

The film plating technology, also called film technology, is to adopt a physical or chemical method under vacuum condition to obtain the required film body on the surface of an object. The coating technology is widely applied to the fields of acid resistance, corrosion resistance, heat resistance, surface hardening, photoelectric communication, integrated electronics, new energy and the like. Physical vapor deposition vacuum plating techniques (referred to as vacuum plating techniques because the process is performed substantially in a vacuum environment). The vacuum plating technology is to heat or bombard the material to be plated in a vacuum cavity to evaporate or ionize the metal, so as to agglomerate the metal film on the surface of the plated article.

The etching process is a dry etching technique using plasma. Higher pressure and less rf power are typically used to bring atoms or molecules of the surface layer of the wafer substrate into contact with reactive atoms in the plasma atmosphere and react to form gaseous products that leave the crystal plane to cause etching.

The etching process and the thin film technology are common means in the chip manufacturing process, and a metal sputtering machine is special equipment for performing plasma etching on the surface of a wafer and sputtering a layer of required metal thin film. In the production process of the equipment, the wafer is required to be placed on the wafer tray, and is automatically conveyed into the process cavity of the machine through the conveying mechanism in the machine to carry out the etching process and the coating process on the wafer. Specifically, in the etching process, a metal layer formed on the wafer tray in the film process is etched and splashed back to the surface of the wafer, so that the subsequent film plating process of the wafer is affected, and the quality of the film after film plating is reduced.

In order to prevent a metal layer formed by sputtering on the wafer tray from being splashed back to the surface of the wafer in the etching process, a shielding baffle is generally arranged in a process cavity of a machine, the shielding baffle is arranged on the upper side of the positioned wafer tray, a wafer positioning groove for positioning the wafer is formed in the wafer tray, a baffle body and baffle perforations are formed in the shielding baffle, the wafer placed on the wafer tray is exposed outwards through the baffle perforations, and other parts, except for the wafer positioning holes, on the wafer tray are covered by the baffle body. Through the arrangement of the structure, the metal film formed on the tray body is not affected when being etched, so that the metal film is prevented from being sputtered to the upper surface of the wafer by etched ions, and the subsequent coating film is prevented from being affected.

However, in the actual use process, a certain gap exists between the shielding baffle plate and the wafer tray, the part, close to the wafer positioning groove, of the tray body covered by the gap can still be bombarded by etching laser, and bombarded ions can be splashed to the upper surface of the wafer through the gap, so that the problem is not effectively solved.

Therefore, there is a need for a wafer tray that can effectively prevent the sputtering of the metal film on the tray to the upper surface of the wafer during the etching process.

Disclosure of Invention

The invention aims to provide a wafer tray to solve the defects in the prior art, and can effectively avoid the occurrence of ion sputtering deposited on the wafer tray to the upper surface of a wafer, thereby improving the quality of coating.

The wafer tray provided by the invention comprises:

the tray body is provided with a wafer positioning groove which is arranged upwards and is used for positioning a wafer;

the outer anti-back splash groove is arranged on the tray body and located beside the wafer positioning groove, and is wound outside the wafer positioning groove in an arc shape;

the baffle piece is oppositely arranged between the outer anti-splash groove and the wafer positioning groove.

Further, the tray body is further provided with an inner anti-splash groove which is arranged in the wafer positioning groove and exposed to the wafer positioning groove, the inner anti-splash groove is arranged at the edge of the wafer positioning groove in an arc shape, and a wafer supporting table for supporting the wafer is formed at the center of the wafer positioning groove relatively.

Further, the opening width of the inner anti-splash groove is not more than 2mm.

Further, the outer anti-splash groove is arranged in parallel with the inner anti-splash groove, the inner anti-splash groove and the outer anti-splash groove are arranged on two opposite sides of the baffle, and the baffle is arranged in parallel with the inner anti-splash groove.

Further, the bottom surface of the tray body is provided with a fork frame positioning groove with a downward opening, the position of the inner anti-splash groove is staggered with the position of the fork frame positioning groove, and the position of the outer anti-splash groove is staggered with the position of the fork frame positioning groove.

Further, the tray body is rectangular and has long sides and wide sides, the fork frame positioning groove extends in the direction parallel to the wide sides of the tray body, and the fork frame positioning groove is arranged on the bottom surface of the tray body and is close to the position of the wide sides; the position of one end of the inner anti-splash groove extending towards the broadside direction is not more than the position corresponding to the fork frame positioning groove;

the position of one end of the outer anti-splash groove extending towards the broadside direction is not more than the position corresponding to the fork frame positioning groove.

Further, the width of the barrier is not more than 3mm.

Further, the tray body is further provided with a wafer supporting table arranged in the wafer positioning groove, the wafer supporting table is arranged at the center of the wafer positioning groove, and the size of the wafer supporting table is smaller than that of the wafer positioning groove so as to form an inner anti-splash groove beside the wafer supporting table.

The invention also discloses wafer sputtering equipment, which comprises a frame, a tray positioning table arranged on the frame, a plasma source arranged on the upper side of the tray positioning table, a shielding baffle plate arranged between the plasma source and the tray positioning table and the wafer tray; the tray positioning table is provided with a positioning mechanism which is matched with the wafer tray and is used for positioning the wafer tray;

the shielding baffle is provided with a baffle body and baffle perforations arranged on the baffle body, and the shielding baffle is arranged on the upper side of the wafer tray after the wafer tray is positioned;

the baffle perforation is opposite to the position of the wafer positioning groove and used for exposing the wafer positioning groove outwards, and the baffle body is opposite to the position of the outer anti-splash groove and covers the outer anti-splash groove.

Further, the baffle body is opposite to the baffle member in position and covers part of the baffle member.

Compared with the prior art, the outer anti-back splash groove which is arranged at the side of the wafer positioning groove and is in an arc shape is arranged on the wafer tray, when the wafer tray bears the wafer to the film plating process cavity, the formed film layer is formed in the outer anti-back splash groove, when the wafer tray bears the wafer to the etching process cavity, when the plasma bypasses the gap part to bombard the metal film in the outer anti-back splash groove, the bombarded ions are generally directly deposited on the side wall of the outer anti-back splash groove, and the bombarded ions are difficult to cross the baffle part due to the existence of the baffle part, so that the ions deposited on the wafer tray are finally deposited in the outer anti-back splash groove, the occurrence of sputtering the ions deposited on the wafer tray to the upper surface of the wafer is effectively avoided, and the quality of the film plating is improved.

Drawings

FIG. 1 is a schematic diagram of a prior art wafer tray in use in cooperation with a shielding baffle;

FIG. 2 is a schematic diagram illustrating a matching relationship between a wafer tray and a shielding plate during use according to an embodiment of the present invention;

FIG. 3 is a schematic view of a mounting structure of a wafer tray on a positioning mechanism according to an embodiment of the present invention;

FIG. 4 is a schematic view of a wafer pallet according to an embodiment of the present invention after being positioned by a pre-positioning mechanism;

FIG. 5 is a schematic view of a first configuration of a wafer pallet according to an embodiment of the present invention;

FIG. 6 is a second schematic view of a wafer pallet according to an embodiment of the present invention;

FIG. 7 is a top view of a wafer pallet according to an embodiment of the present disclosure;

FIG. 8 is a cross-sectional view in the direction CC in FIG. 7;

FIG. 9 is an enlarged view of a portion of FIG. 8 at A;

FIG. 10 is a right side view of a wafer pallet as disclosed in an embodiment of the present invention;

FIG. 11 is a schematic view of a positioning mechanism according to an embodiment of the present invention;

FIG. 12 is a first schematic view of a pre-positioning mechanism according to an embodiment of the present invention;

FIG. 13 is a second schematic view of a positioning mechanism according to an embodiment of the present invention;

reference numerals illustrate: 1-a tray body, 10-a pinhole, 11-a wafer positioning groove, 111-an edge part, 112-a left wafer positioning groove, 113-a right wafer positioning groove and 114-a middle wafer positioning groove; 12-a wafer supporting table, 13-an inner anti-splash groove; 14-separating part, 15-long side, 16-wide side, 17-groove side body, 18-fork positioning groove, 19-preset positioning groove,

2-outer anti-splash groove, 21-left outer anti-splash groove, 22-middle anti-splash groove, 23-right outer anti-splash groove, 3-baffle piece, 4-middle positioning part, 5-shielding baffle plate, 51-baffle plate body, 52-baffle plate perforation,

6-positioning mechanism, 61-tab needle supporting plate, 62-thimble, 63-positioning mechanism, 631-positioning bracket, 6311-transverse mounting plate, 6312-vertical mounting plate, 632-roll shaft, 6321-supporting shaft, 6322-roll body,

100-wafer, 200-metal film and 300-gap part.

Detailed Description

The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.

Embodiments of the invention: a wafer tray for carrying a wafer and for carrying the wafer for movement into different process chambers is disclosed, the wafer tray moving the wafer into a coating process chamber during a coating process and the wafer tray moving the wafer into an etching process chamber during an etching process. Because the metal film layer is generated on the surface of the wafer tray when the wafer tray is in the film coating process cavity and the etching process cavity and moves back and forth, ions are easily ionized after the metal film layer is bombarded by laser plasmas in the etching process, and the ionized ions can be splashed and deposited on the upper surface of the wafer, so that the quality of a film produced by the wafer in the subsequent film coating process is affected.

In order to avoid the above problems, as shown in fig. 1, a shielding baffle plate 5 is generally disposed in the etching chamber during etching, and the shielding baffle plate 5 covers the area outside the tray body and the upper wafer positioning groove 11, so as to avoid the plasma bombarding the area outside the wafer positioning groove 11 during etching, but because a gap part 300 is disposed between the shielding baffle plate 5 and the tray body 1, the plasma can affect the area outside the wafer positioning groove 11 of the tray body 1 through the gap part 300, and ions generated by the bombarded metal film 200 can also splash onto the upper surface of the wafer 100 through the gap part 300, and still affect the quality of the film coating of the wafer 100.

In order to solve the above technical problems, as shown in fig. 2-9 of the present embodiment, a wafer tray is disclosed, the wafer tray includes a tray body 1, an outer anti-splash groove 2 and a baffle 3, the tray body 1 has a wafer positioning groove 11 which is opened upwards and is used for positioning a wafer 100; the outer anti-back splash groove 2 is arranged on the tray body 1 and located beside the wafer positioning groove 11, and the outer anti-back splash groove 2 is wound outside the wafer positioning groove 11 in an arc shape; the baffle 3 is oppositely arranged between the outer anti-splash groove 2 and the wafer positioning groove 11.

As shown in fig. 2, in this embodiment, the outer anti-splash groove 2 is formed around the wafer positioning groove 11 in an arc shape at the side of the wafer positioning groove 11, when the wafer tray carries the wafer to the plating process chamber, the formed metal film 200 is formed in the outer anti-splash groove 2, when the wafer tray carries the wafer to the etching process chamber, because the metal film 200 formed outside the wafer positioning groove 11 is generated in the groove, when the plasma bypasses the gap part 300 to bombard the metal film 200 in the outer anti-splash groove 2, the bombarded ions are generally directly deposited on the side wall of the outer anti-splash groove 2, and because of the existence of the baffle 3, the bombarded ions are difficult to cross the baffle 3, so that finally, the ions deposited on the wafer tray are also deposited in the outer anti-splash groove 2, the occurrence of ion sputtering onto the upper surface of the wafer 100 is effectively avoided, and the quality of the film formed in the subsequent plating process is improved.

The barrier 3 is higher than the wafer positioning grooves 11 and the outer anti-splash grooves 2 on both sides, which is equivalent to providing a barrier between the outer anti-splash grooves 2 and the wafer positioning grooves 11, and the thin film deposited in the anti-splash grooves 2 needs to cross the barrier 3 if the upper surface of the wafer 100 is to be splashed, so the arrangement of the barrier 3 forms an effective barrier for ion sputtering.

During use, however, if the width of the barrier 3 is large, a metal film is deposited on the barrier 3 during the film plating process, and ions bombarded on the barrier 3 under the action of plasma are sputtered onto the wafer.

Therefore, in order to better improve the coating quality, the width of the baffle 3 does not exceed 3mm. When the width of the barrier 3 is relatively narrow, it is not easy to form a metal thin film on the barrier 3, and even if the metal thin film is formed, the metal thin film has a relatively small influence on the sputtering action of the wafer under the plasma action.

The outer anti-back-splash groove 2 is arranged in practice, so that a thin film originally formed on the tray body 1 is formed in the outer anti-back-splash groove 2, and ions bombarded by plasmas are prevented from splashing to the upper surface of a wafer in the process of being bombarded by plasmas. The width dimension of the outer anti-splash groove 2 cannot be too narrow in the above process, and the width of the outer anti-splash groove 2 is not less than 20mm in the present embodiment. If the width of the outer anti-splash groove 2 is too narrow, the upper surface of the tray body 1 is also partially provided with the metal film 200, and the upper surface of the wafer is affected due to the close distance from the wafer.

In order to conveniently realize the placement of the wafer in the wafer positioning groove 11, the size of the wafer positioning groove 11 is generally set to be larger than the corresponding wafer 100, specifically, the diameter of the wafer positioning groove 11 is at least 2mm larger than that of the wafer, so that after the wafer is positioned to the center position in the wafer positioning groove 11, the gap between the edge of the wafer 100 and the side wall of the wafer positioning groove 11 is at least 1mm, and the taking and placing of the wafer 100 in the wafer positioning groove 11 are more conveniently realized.

In the prior art, as shown in fig. 1, due to the existence of the gap of 1mm, the edge 111 of the wafer positioning groove 11, which is offset from the wafer 100, is easy to form the metal film 200 during the film plating process, and further the metal film 200 is bombarded under the action of the plasma, so that the film of the edge 111 is easy to sputter ions onto the upper surface of the wafer 100 or the side surface of the wafer 100 after being bombarded, thereby affecting the film plating quality of the wafer 100.

In order to avoid the above problem, in this embodiment, the tray body 1 further has an inner anti-splash groove 13 disposed in the wafer positioning groove 11 and exposed to the wafer positioning groove 11, and the inner anti-splash groove 13 is disposed in an arc shape at an edge of the wafer positioning groove 11, and forms a wafer supporting table 12 for supporting a wafer at a center of the wafer positioning groove 11.

As shown in fig. 5, the inner anti-splash groove 13 surrounds the wafer support table 12, and the inner anti-splash groove 13 is actually a groove body formed at the bottom of the wafer positioning groove 11, and the groove body is disposed in the wafer positioning groove 11 and located at the edge of the wafer positioning groove 11. The arrangement of the inner anti-back-splash groove 13 ensures that a metal film deposited and formed in the film plating process is deposited in the inner anti-back-splash groove 13, and ions bombarded out of the film in the inner anti-back-splash groove 13 are back-splashed onto the side wall of the inner anti-back-splash groove 13 under the bombardment effect of plasma in the etching process, so that back-splash on the side wall of the wafer 100 and the upper surface of the wafer 100 is avoided.

Further, the opening width of the inner splash groove 13 is not more than 2mm in the present embodiment. Preferably, the opening width of the inner splash-proof trough 13 is 1.5mm.

In the practical use process, when the opening width of the inner anti-back-splash groove 13 is larger, the amount of the thin film deposited in the inner anti-back-splash groove 13 is larger, and the space of the inner anti-back-splash groove 13 is also increased due to the increase of the opening, so that the space of the inner anti-back-splash groove 13, in which the metal ions generated after the deposited thin film is bombarded, is larger, the ions cannot quickly find the attachment point, and are easy to splash to the back surface of the wafer 100, thereby affecting the sputtering degree of the back surface of the wafer 100 and the coating film of the wafer 100.

In this embodiment, the opening of the inner anti-splash groove 13 is set to be not more than 2mm, and because of the narrow space, the bombarded metal ions can always easily contact with the side wall of the inner anti-splash groove 13 in the process of drifting, that is, the bombarded ions can find the attachment point more quickly at a shorter distance, so that rapid precipitation is performed on the side wall of the inner anti-splash groove 13, further drifting in the space is avoided as much as possible, and the influence on the back surface of the wafer 100 is reduced.

In addition, the opening of the inner anti-splash groove 13 is set to be 1.5mm, so that machining and manufacturing can be realized more conveniently, and a groove body with the opening of 1.5mm can be arranged conveniently in the existing machining process.

In the above embodiment, it may be considered that a groove is formed in the wafer positioning groove 11 to form the inner anti-splash groove 13, in another embodiment, the inner anti-splash groove 13 may be formed by forming the inner anti-splash groove 13 by a manner that a wafer supporting table 12 is disposed in the wafer positioning groove 11 on the tray body 1, the wafer supporting table 12 is disposed at a central position of the wafer positioning groove 11, and a size of the wafer supporting table 12 is smaller than a size of the wafer positioning groove 11 to form the inner anti-splash groove 13 beside the wafer supporting table 12.

In the above process, the wafer supporting table 12 protruding upwards is disposed inside the wafer positioning groove 11, so that the concave inner anti-splash groove 13 is formed relatively at the edge of the wafer supporting table 12, it should be noted that, for conveniently implementing the positioning support of the wafer positioning groove 11 on the wafer, the height of the wafer supporting table 12 is not greater than the depth of the wafer positioning groove 11, that is, the upper surface of the wafer supporting table 12 does not protrude out of the upper surface of the tray body 1.

As a preferred solution, the radius of the wafer supporting table 12 is smaller than the radius of the wafer positioning groove 11 by 1.5mm, and the arrangement of the structure makes the opening size of the inner anti-splash groove 13 smaller than 1.5mm, so that the oversized opening of the inner anti-splash groove 13 is avoided.

The too large opening of the inner anti-back-splash groove 13 can cause that the ion is bombarded and then the ion splashes on the back surface of the wafer 100 easily due to the larger drifting space in the inner anti-back-splash groove 13, thereby influencing the film plating of the wafer.

In this embodiment, as shown in fig. 2, the outer anti-splash groove 2 is disposed parallel to the inner anti-splash groove 13, the inner anti-splash groove 13 and the outer anti-splash groove 2 are disposed on opposite sides of the baffle 3, and the baffle 3 is disposed parallel to the inner anti-splash groove 13.

The inner anti-splash groove 13 and the outer anti-splash groove 2 are matched with each other to reduce the influence on the wafer to the greatest extent more comprehensively, and the outer anti-splash groove 2 is annular and annularly arranged at the edge of the wafer positioning groove 11 so as to play a role in the edge of the round wafer 100.

Further, a plurality of wafer positioning slots 11 are generally arranged on one tray body 1 in parallel, so that simultaneous operation on a plurality of wafers is conveniently realized, and in this embodiment, three wafer positioning slots 11 are arranged on the tray body 1. The tray body 1 is rectangular and has a length direction and a width direction, three wafer positioning grooves 11 are arranged in parallel along the length direction of the tray body 1, and two adjacent wafer positioning grooves 11 are adjacent.

As shown in fig. 7, in the present embodiment, the wafer positioning grooves 11 are provided with three in total, a left wafer positioning groove 112, a right wafer positioning groove 113, and an intermediate wafer positioning groove 114 provided between the left wafer positioning groove 112 and the right wafer positioning groove 113, respectively.

The outer side of the left wafer positioning groove 112 is provided with a left outer anti-splash groove 21 which is arranged around the left wafer positioning groove 112, the outer side of the middle wafer positioning groove 113 is provided with a middle outer anti-splash groove 22 which is arranged around the middle wafer positioning groove 113, and the outer side of the right wafer positioning groove 114 is provided with a right outer anti-splash groove 23 which is arranged around the right wafer positioning groove 114.

Since the left wafer positioning groove 112 is adjacent to the intermediate wafer positioning groove 114 and both are circular, the left outer anti-splash groove 21 and the intermediate anti-splash groove 22 overlap each other at the crossing position. Correspondingly, the right outer anti-splash groove 23 and the middle anti-splash groove 22 also overlap each other.

In addition, since the adjacent left wafer positioning groove 112 is adjacent to the intermediate wafer positioning groove 114, and the outer splash preventing groove 2 is not required to be provided at the adjacent position, and at the same time, since the left wafer positioning groove 112 and the right wafer positioning groove 113 are provided at positions close to the edge in the length direction of the tray body 1, since the fork positioning groove 18 provided to be opened downward is provided at the positions close to the edge of the tray body 1, and since the thickness of the tray body 1 is limited, the outer splash preventing groove 2 is not generally provided at the position opposite to the fork positioning groove 18 at the upper surface of the tray body 1, otherwise, the stability of the tray body 1 is affected. Therefore, the outer splash groove 2 is generally arranged on the upper surface of the tray body 1 in a staggered manner with respect to the fork positioning groove 18.

The above-described configuration makes the left outer reverse sputtering groove 21 divided into two parts by the left wafer positioning groove 112, the two parts being disposed opposite to each other in the width direction and on opposite sides of the left wafer positioning groove 112.

The intermediate anti-splash groove 22 is divided into two parts by the intermediate wafer positioning groove 114, and the two parts are disposed opposite to each other in the width direction and on opposite sides of the intermediate wafer positioning groove 114.

The right anti-splash groove 23 is divided into two parts by the right wafer positioning groove 113, the two parts being disposed opposite to each other in the width direction and on opposite sides of the right wafer positioning groove 113.

The left outer anti-splash groove 21, the right outer anti-splash groove 23 and the middle anti-splash groove 22 which are opposite to each other and positioned on the same side are communicated with each other and are in a wave shape as a whole.

As shown in fig. 6 and 7, in the present embodiment, since the tray body 1 is further provided with the intermediate positioning portion 4 for positioning the tray body, the intermediate positioning portion 4 is provided on the tray body 1 and is provided downward opening, and the intermediate positioning portion 4 is provided at an intermediate position in the longitudinal direction on the tray body 1. The intermediate positioning portion 4 is used for positioning the tray body 1 in the longitudinal direction of the tray body 1 when the tray body 1 is at the loading station.

In the practical use process, certain requirements and limitations are provided for the thickness of the tray body 1, the thickness of the tray body 1 is generally required not to be too thick, and if the tray body 1 is too thick, the tray body 1 can be influenced to enter the working cavity. Therefore, the recess formed at the position of the middle positioning portion 4 needs to be avoided, in this embodiment, the outer splash-proof groove 2 is not provided in the area of the tray body 1 opposite to the position of the middle positioning portion 4, otherwise, the tray body 1 is severely thinned by providing the recess at the corresponding positions on the upper and lower sides of the tray body 1, and stability of the tray body 1 is further affected.

As shown in fig. 7, in the present embodiment, a partition 14 is formed on the upper surface of the tray body 1 in correspondence with the area facing the intermediate positioning portion 4, and the partition 14 divides the intermediate splash back-preventing tub 22 into two parts that are disposed opposite to each other in the longitudinal direction. The partition 14 is actually a portion of the upper surface of the tray body 1, and the intermediate splash grooves 22 formed on opposite sides of the portion are at a high point. The size of the partition 14 is relatively narrow, and even if a metal film is formed on the partition 14, the metal film does not splash on the upper surface of the wafer in the etching process, and the influence on the film coating on the surface of the wafer is small, but the stability of the tray body 1 in the use process is greatly improved.

As shown in fig. 10, in order to conveniently realize the transfer movement of the tray body 1, a fork positioning groove 18 with a downward opening is provided on the bottom surface of the tray body 1, the position of the inner anti-splash groove 13 and the position of the fork positioning groove 18 are offset, and the position of the outer anti-splash groove 2 and the position of the fork positioning groove 18 are also offset.

In this embodiment, the offset means that the inner splash groove 13 is not provided in the upper surface of the tray body 1 in the region opposite to the fork positioning groove 18, and the outer splash groove 2 is not provided. The arrangement of such a structure also considers the limitation of the thickness of the tray body 1, and if the outer anti-splash groove 2 or the inner anti-splash groove 13 are also arranged in the area opposite to the fork positioning groove 18 on the tray body 1, the thickness of the tray body 1 in the area is easily reduced, thereby influencing the supporting strength of the wafer dragging tray and further influencing the stable use.

In this embodiment, the tray body 1 is rectangular and has a long side 15 and a wide side 16, and the fork positioning groove 18 extends in a direction parallel to the wide side 16 of the tray body 1, that is, the fork positioning groove 18 extends in a width direction of the tray body 1. The fork positioning groove 18 is arranged on the bottom surface of the tray body 1 and is close to the wide edge 16, the tray body 1 is also provided with a groove edge body 17 which is relatively formed between the fork positioning groove 18 and the wide edge 16, and the fork positioning groove 18 is recessed relative to the groove edge body 17.

The position of one end of the inner splash-proof groove 13 extending towards the direction of the wide edge 16 is not more than the position corresponding to the fork positioning groove 18;

the position of one end of the outer splash guard 2 extending toward the wide side 16 does not exceed the position corresponding to the fork positioning groove 18.

The positioning of the fork positioning groove 18 near the wide side 16 can make narrower the area on the upper surface of the tray body 1 opposite to the fork positioning groove 18, where the outer anti-splash groove 2 cannot be provided in order to ensure the firmness of the tray body 1, so the narrower the area is, the more the influence of the metal film formed on the tray body 1 on the upper surface of the wafer sputtering during the etching process can be avoided.

The invention also discloses wafer sputtering equipment which comprises a frame, a tray positioning table arranged on the frame, a plasma source arranged on the upper side of the tray positioning table, a shielding baffle plate 5 arranged between the plasma source and the tray positioning table and the wafer tray; the tray positioning table is provided with a positioning mechanism 6 which is matched with the wafer tray and is used for positioning the wafer tray;

the shielding baffle 5 is provided with a baffle body 51 and baffle perforations 52 arranged on the baffle body 51, and the shielding baffle 5 is arranged on the upper side of the wafer tray after the wafer tray is positioned;

the baffle through holes 52 are opposite to the positions of the wafer positioning grooves 11 and are used for exposing the wafer positioning grooves 11 outwards, and the baffle body 51 is opposite to the positions of the outer anti-splash grooves 2 and is used for covering the outer anti-splash grooves 2.

In the wafer sputtering device disclosed in this embodiment, the shielding baffle 5 is arranged to cover the outer anti-back-sputtering groove 2, and the outer anti-back-sputtering groove 2 is arranged to enable the metal film originally formed on the upper surface of the wafer tray to be formed at the bottom of the groove, so that the distance and difficulty of metal ion sputtering to the upper surface of the wafer are increased in the etching process, and meanwhile, the shielding baffle 5 covers the outer anti-back-sputtering groove 2 to better prevent the metal film from splashing in the outer anti-back-sputtering groove 2 after being ionized.

Preferably, the baffle body 51 is opposite to the position of the baffle 3, and covers part of the baffle 3. The baffle body 51 covers the baffle 3, so that the effect of entering the outer anti-splash groove 2 from the plasma through the gap can be weakened, and metal ions can be better prevented from splashing when the plasma acts on the metal film formed in the outer anti-splash groove 2.

The position of the baffle through hole 52 is opposite to the position of the wafer positioning groove 11, and the size of the baffle through hole 52 is slightly larger than the size of the wafer positioning groove 11, and the position of the baffle body 51 at the edge of the baffle through hole extends to the center position to the edge of the baffle 3 close to the wafer positioning groove.

In a specific use process, the wafer tray can reciprocate among a wafer loading area, an etching process cavity and a film plating process cavity, and in the wafer loading area, wafers are unloaded from a wafer boat under the action of a manipulator and then loaded on the tray body 1, and finally positioned in the wafer positioning groove 11. The tray body 1 loaded with the wafers is conveyed into an etching process cavity for etching under the action of a conveying mechanism of a wafer sputtering device, an oxide film on the upper surface of the wafers is removed in the etching process, then the wafers are conveyed into a coating process cavity for coating, a layer of metal film is formed on the surfaces of the wafers after the coating is finished, and after the coated wafers are unloaded, the wafer tray is operated to a loading area again for loading the next wafers.

As shown in fig. 11-13, in order to achieve more accurate positioning of the wafer in the wafer positioning groove 11 during loading, the positioning mechanism 6 includes a needle splicing mechanism, and the needle splicing mechanism includes a needle splicing support plate 61 and a plurality of ejector pins 62 disposed on the needle splicing support plate 61, where the ejector pins 62 are vertically positioned on the needle splicing support plate 61 and can move up and down in a vertical direction.

The tray body 1 is provided with a pin hole 10 matched with the thimble, the thimble 62 moves upwards and passes through the pin hole 10 after the tray body 1 is positioned, and the thimble 62 protrudes out of the upper surface of the tray body 1 and is used for supporting the wafer 100. The wafer 100 is placed on the tray body 1 under the action of the manipulator, then the thimble 62 is dropped downwards, and the wafer 100 is moved downwards along with the thimble 62 and finally positioned in the wafer positioning groove 11.

The wafer 100 can be more accurately positioned into the wafer positioning groove 11 by loading the wafer 100 through the ejector pin 62, the radius size of the wafer positioning groove 11 in the prior art is generally set to be only 1mm larger than the radius size of the wafer 100, so that the accurate positioning requirement on the wafer 100 is necessarily high, meanwhile, because the wafer tray is in a movable state, the position of each time has deviation, the position of the wafer is determined, the wafer is accurately loaded onto the wafer tray by the mechanical arm, and the positioning requirement is very high.

In this embodiment, after the tray body 1 is moved in place, the positioning of the position of the tray body 1 is achieved through the cooperation of the thimble 62 and the pinhole 10 on the tray body 1. However, in the actual use process, the tray body 1 is often deviated, so that the ejector pins 62 and the pin holes 10 are mutually misplaced, the ejector pins 62 cannot effectively penetrate into the pin holes 10, and the ejector pins 62 are easy to jack up the tray body 1, so that the loading of the wafer 100 is influenced.

As shown in fig. 3 and fig. 11-13, in order to solve the above-mentioned problems, an embodiment of the present invention further discloses a wafer tray positioning structure, which includes:

a tab needle support plate 61;

the thimble 62 is arranged on the splicing needle supporting plate 61 and is perpendicular to the splicing needle supporting plate 61;

the pre-positioning mechanism 63 has a positioning bracket 631 provided on the needle-attaching support plate 61 and a roller shaft 632 rotatably mounted on the positioning bracket 631, and the axial direction of the roller shaft 632 is parallel to the plane of the needle-attaching support plate 61.

The thimble 62 is matched with the positioning groove 19 on the tray body 1 through the pre-positioning mechanism 63 before being positioned through the thimble 62 so as to pre-position the tray body 1, and the thimble 62 is just opposite to the pinhole 10 on the tray body 1 after being pre-positioned, so that the thimble 62 is conveniently penetrated through the pinhole 10, and the positioning and feeding of the wafer 100 on the tray body 1 are better realized.

The accuracy of positioning can be effectively improved through the roll shaft 632, and the situation that the pre-positioning mechanism 63 is clamped on the tray body 1 and cannot be completely positioned in the pre-positioning groove 19 is avoided, so that positioning inaccuracy is caused. Since the roller shaft 632 can rotate, the roller shaft 632 can rotate when the roller shaft 632 performs the positioning of the tray body 1, and thus the problem of the engagement on the side wall of the positioning groove 19 does not occur.

In this embodiment, the pre-positioning mechanisms 63 are disposed opposite to each other in pairs and are located on both sides of the tab needle support plate 61. A plurality of groups of pre-positioning mechanisms 63 can be arranged on the joint sheet supporting plate 61, so that positioning is realized better.

The top sheet needle supporting plate 61 is rectangular and includes a length direction and a width direction, and a set of pre-positioning mechanisms 63 are disposed opposite to each other along the length direction of the top sheet needle supporting plate 61 and are located at positions near the edges on the pre-positioning mechanisms 63.

The provision of the predetermined mechanism 63 at the edge of the top sheet needle support plate 61 can occupy less space inside the stator needle support plate 61, and can also provide a better wafer tray.

The pre-positioning mechanism 63 is provided at a central position in the width direction of the top sheet needle supporting plate 61. The positioning of the tray body 1 can be more stably achieved by being provided at the center position in the width direction of the stator needle support plate 61.

The positioning bracket 631 comprises a transverse mounting plate 6311 and a vertical mounting plate 6312 which is perpendicular to the transverse mounting plate 6311, wherein the transverse mounting plate 6311 is attached to the needle splicing support plate 61, and the roller shaft 632 is rotatably mounted on the vertical mounting plate 6311.

The transverse mounting plate 6311 has a fitting mounting portion fixedly fitted to the needle bar support 61 and a connecting portion extending outside the needle bar support 61, and the vertical mounting plate 6312 is fixed to the connecting portion.

The roll shaft 632 includes a support shaft 6321 fixed to the vertical mounting plate 6312 and a roll body 6322 rotatably mounted to the support shaft 6321, and the roll body 6322 is a cylinder.

The invention also discloses wafer sputtering equipment, which comprises a frame, a tray positioning table arranged on the frame, a wafer tray and a wafer tray positioning structure, wherein the wafer tray positioning structure is arranged on the tray positioning table;

the wafer tray comprises a tray body 1, a pre-positioning groove 19 and a pinhole 10, wherein the pre-positioning groove 19 and the pinhole 10 are arranged on the tray body 1, and the pre-positioning groove 19 is matched with the roll shaft 632 roll shaft; the pinhole 10 is matched with the thimble 62, and after the pre-positioning groove 19 is matched with the roller shaft 632 in a positioning way, the pinhole 10 is opposite to the thimble 62.

The wafer tray reciprocates among the wafer loading area, the etching process cavity and the coating process cavity under the action of the conveying mechanism, when the wafer tray moves to the wafer loading area, the splicing needle supporting plate 61 is controlled to approach the tray body 1 at the upper side, and the roller shaft 632 is positioned in the pre-positioning groove 19 on the tray body 1 in the moving and approaching process, so that the pre-positioning of the tray body 1 is realized. At this time, the position of the thimble 62 is opposite to that of the pinhole 10, and the thimble 62 is controlled to move upwards so as to penetrate the pinhole 10.

In the exemplary embodiment, the pre-positioning groove 19 comprises a semicircular groove bottom and a guide sidewall, the diameter of the semicircular groove bottom being adapted to the outer diameter of the roller shaft 632.

It is understood that the wafer sputtering device is also provided with a transmission mechanism for driving the wafer tray to move and a lifting mechanism for driving the thimble to lift.

While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A wafer pallet, comprising:

the baffle piece is oppositely arranged between the outer anti-splash groove and the wafer positioning groove;

the tray body is also provided with an inner anti-splash groove which is arranged in the wafer positioning groove and exposed to the wafer positioning groove, the inner anti-splash groove is arranged at the edge of the wafer positioning groove in an arc shape, and a wafer supporting table for supporting a wafer is formed at the center of the wafer positioning groove relatively;

the opening width of the inner anti-splash groove is not more than 2mm; the opening width of the inner anti-back-splash groove is 1.5mm, and the inner anti-back-splash groove is narrow so that the bombarded metal ions can be quickly deposited on the side wall of the inner anti-back-splash groove;

the outer anti-splash groove is arranged in parallel with the inner anti-splash groove, the inner anti-splash groove and the outer anti-splash groove are arranged on two opposite sides of the baffle, and the baffle is arranged in parallel with the inner anti-splash groove.

2. The wafer pallet of claim 1, wherein: the bottom surface of tray body is provided with down open-ended fork frame constant head tank, interior anti-splash groove place with fork frame constant head tank place dislocation each other, outer anti-splash groove place with fork frame constant head tank place dislocation each other.

3. The wafer pallet of claim 2, wherein: the tray body is rectangular and has long sides and wide sides, the fork frame positioning groove extends along the direction parallel to the wide sides of the tray body, and the fork frame positioning groove is arranged on the bottom surface of the tray body and is close to the position of the wide sides; the position of one end of the inner anti-splash groove extending towards the broadside direction is not more than the position corresponding to the fork frame positioning groove;

4. The wafer pallet of claim 1, wherein: the width of the barrier is not more than 3mm.

5. The wafer pallet of claim 1, wherein: the tray body is also provided with a wafer supporting table arranged in the wafer positioning groove, the wafer supporting table is arranged at the center of the wafer positioning groove, and the size of the wafer supporting table is smaller than that of the wafer positioning groove so as to form an inner anti-splash groove beside the wafer supporting table.

6. A wafer sputtering apparatus comprising a frame, a tray positioning table provided on the frame, a plasma source provided on an upper side of the tray positioning table, a shielding plate provided between the plasma source and the tray positioning table, and the wafer tray according to any one of claims 1 to 5; the tray positioning table is provided with a positioning mechanism which is matched with the wafer tray and is used for positioning the wafer tray;

7. The wafer sputter apparatus of claim 6, wherein: the baffle body is opposite to the baffle piece in position and covers part of the baffle piece.