CN112877655A - Reaction cavity for sputtering deposition - Google Patents
Reaction cavity for sputtering deposition Download PDFInfo
- Publication number
- CN112877655A CN112877655A CN202110249062.6A CN202110249062A CN112877655A CN 112877655 A CN112877655 A CN 112877655A CN 202110249062 A CN202110249062 A CN 202110249062A CN 112877655 A CN112877655 A CN 112877655A
- Authority
- CN
- China
- Prior art keywords
- shield
- ring
- groove
- reaction chamber
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 27
- 238000000151 deposition Methods 0.000 title abstract description 13
- 230000008021 deposition Effects 0.000 title abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000005488 sandblasting Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a reaction cavity for sputtering deposition, which comprises a cavity, a shield, a tray, a clamp ring and a target fixing device, wherein the shield, the tray, the clamp ring and the target fixing device are arranged in the cavity; the fixture ring is located below the shield ring, the fixture ring is used for placing a wafer, the tray is located below the fixture ring and used for fixing and supporting the fixture ring, the target fixing device is arranged in the shield and located above the shield ring and used for installing and fixing a target, and materials after reaction of the target are deposited on the wafer through the inner side area of the shield ring. By arranging the groove, the adhesion area of the material is increased, and a thermal deformation space on the surface of the material is reserved, so that the peeling caused by stress is reduced. The working condition service cycle of the shield can be prolonged, the cleaning and maintenance frequency of the equipment is reduced, the service efficiency of the equipment is improved, and the production cost is reduced.
Description
Technical Field
The invention relates to the field of devices for sputtering deposition in a semiconductor process, in particular to a reaction cavity for sputtering deposition.
Background
In the metallization process of semiconductor integrated circuits, sputtering deposition is the most commonly used physical deposition process. The ion bombardment involved in sputtering is the physical impact of atoms or molecules from the surface of a target of solid metal and the re-deposition of a thin film on the surface of the substrate. The sputtering process can deposit metal alloy films relatively easily by using alloy targets with appropriate metal ratios.
In the sputtering process, the target material is not only deposited on the wafer after reaction, but also deposited on the periphery of the reaction chamber cavity, so that the inner wall and other parts of the reaction chamber are influenced by the deposition of the metal film. Therefore, as shown in fig. 1, a typical sputtering process equipment is designed to form a shield 1 ' with a reaction zone formed in the shield 1 ', and the target 2 ' is only deposited on the wafer 3 ' and in the shield 1 ' after reaction, so that the equipment can be put into production again by replacing the dirty shield with a clean shield during maintenance work. However, the material deposited on the shield is accumulated with the production time of the equipment, and when the material is accumulated to a certain thickness, the material is peeled off, and the material adhered on the surface of the shield is peeled off to cause the pollution of the reaction chamber, so that the electrical characteristics of the formed film are poor, and the dirty shield is not suitable for use.
Disclosure of Invention
The invention aims to provide a reaction cavity for sputtering deposition, which has the advantages of reducing the cleaning and maintenance times of equipment, improving the use efficiency of the equipment and reducing the production cost.
In order to achieve the above purpose, the solution of the invention is:
a reaction cavity for sputtering deposition comprises a cavity body, a shield, a tray, a clamp ring and a target fixing device, wherein the shield, the tray, the clamp ring and the target fixing device are arranged in the cavity body;
the fixture ring is located below the shield ring, the fixture ring is used for placing a wafer, the tray is located below the fixture ring and used for fixedly supporting the fixture ring, the target fixing device is arranged in the shield and located above the shield ring, the target fixing device is used for installing and fixing a target, and materials after target reaction are deposited on the wafer through the inner side area of the shield ring.
Preferably, the surface of the shield ring is fully distributed with a circle of grooves, the depth of each groove is 1 mm-2 mm, the distance between every two grooves is 2 mm-10 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting.
Preferably, the cavity comprises an upper cover and a cavity body, the shield comprises an inner shield, an outer shield and the shield ring, the upper end of the outer shield is arranged on the upper part of the cavity body, the upper end of the inner shield is arranged on the upper part of the outer shield, and the upper cover is arranged on the outer shield, so that the upper cover, the inner shield, the outer shield and the cavity body form a closed reaction chamber.
Preferably, the lower end of the outer shield extends inwards and upwards to form a bottom groove, the inner shield body is arranged in the outer shield, and the lower end of the inner shield is positioned in the bottom groove.
Preferably, the bottom of the periphery of the shield ring is provided with a groove, so that the shield ring can be arranged on one groove edge of the bottom groove.
Preferably, the outer ring of the clamp ring is provided with a plurality of screw holes for mounting and fixing on the tray; and a plurality of brackets are arranged at the inner ring position of the clamp ring and used for placing the wafer.
Preferably, the inner side of the clamp ring is provided with a sunken part close to the support, the surface of the sunken part is fully distributed with crossed grooves, the depth of each groove is 1-2 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting. .
Preferably, the target fixing device is bowl-shaped, the surfaces of the target fixing device are fully distributed with crossed grooves, the depth of each groove is 1 mm-2 mm, the distance between every two grooves is 2 mm-10 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting.
After the technical scheme is adopted, the grooves are formed in the surface of the shield ring, so that the adhesion area of the material is increased, the thermal deformation space of the surface of the material is reserved due to the design of the grooves, and the peeling caused by stress is reduced. Therefore, the working condition service cycle of the protective cover can be prolonged, the cleaning and maintenance frequency of the equipment is reduced, the service efficiency of the equipment is improved, and the production cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a prior art sputter deposition process system with a shield.
FIG. 2 is a schematic cross-sectional view of a sputter deposition reaction chamber according to an embodiment of the present invention.
Fig. 3 is a perspective view of the shield ring of the present embodiment.
Fig. 4 is a sectional view of the shield ring of the present embodiment.
Fig. 5 is a perspective view of the clamp ring of the present embodiment.
Fig. 6 is a sectional view of the clamp ring of the present embodiment.
Fig. 7 is a perspective view of the clamp ring of this embodiment with a groove.
Fig. 8 is a perspective view of the target fixing device of the present embodiment.
Description of the symbols:
the device comprises a cavity 1, an upper cover 11, a cavity body 12, a shield 2, an inner shield 21, an outer shield 22, a shield ring 23, a bottom groove 24, a groove edge 241, a groove 231, a tray 3, a clamp ring 4, a target fixing device 5, a wafer 10, a target 20, an inner area 232, a groove 30, a screw hole 41 and a bracket 42.
Detailed Description
In order to further explain the technical solution of the present invention, the present invention is explained in detail by the following specific examples.
As shown in fig. 2, a reaction chamber for sputter deposition according to the present invention includes a chamber 1, a shield 2, a tray 3, a clamp ring 4 and a target fixing device 5. The cavity 1 comprises an upper cover 11 and a cavity body 12, the shield 2 is positioned in the cavity body 12, the shield 2 comprises an inner shield 21, an outer shield 22 and a shield ring 23, the upper end of the outer shield 22 is arranged on the upper portion of the cavity body 12, the upper end of the inner shield 21 is arranged on the upper portion of the outer shield 22, and then the upper cover 11 is arranged on the outer shield 22, so that the upper cover 11, the inner shield 21, the outer shield 22 and the cavity body 12 form a closed reaction chamber. The lower end of the outer shield 22 extends inward and then upward to form a bottom groove 24, the inner shield 21 is disposed inside the outer shield 22, and the lower end of the inner shield 21 is disposed inside the bottom groove 24. The inner region 232 of the shield ring 23 is hollow, and the bottom of the outer periphery of the shield ring 23 is provided with a groove 231, so that the shield ring 23 can be mounted on a groove edge 241 of the bottom groove 24, and the inner side of the inner shield 21 and the upper side of the shield ring 23 jointly form a reaction zone for sputter deposition.
Tray 3 is located the shield ring 23 below, and on anchor clamps ring 4 detachable was fixed in tray 3, anchor clamps ring 4 was used for placing a wafer 10, and tray 3 can be the displacement from top to bottom. The target fixing devices 5 are disposed in the middle of the inner shield 21 and above the shield ring 23, the target fixing devices 5 are used for mounting and fixing the targets 20, and the number of the target fixing devices 5 in this embodiment is four.
During the production, the wafer 10 is placed in the clamp ring 4 and fixed, and at this time, the wafer 10 is located in the inner region 232 of the shield ring 23, and during the sputtering deposition reaction process, the material reacted by the target 20 is mainly deposited on the surface of the wafer 10 through the inner region 232 in the reaction region, and is partially deposited on a partial region of the clamp ring 4, the surface of the target fixing device 5 and the inner region of the shield 2, so that other parts of the contamination chamber are not affected. When the material deposited on the shield 2 reaches a certain level, the production can be continued by only removing the contaminated shield 2 and the clamp ring 4 from the chamber body 12 and replacing the new shield 2 and clamp ring 4, which can reduce the idle cost of the equipment, and simultaneously, the cleaning of the shield 2 and the clamp ring 4 is simpler than the cleaning of the whole chamber and the related cost is lower.
As shown in fig. 3 and 4, which are a perspective view and a cross-sectional view of the shield ring 23 of the embodiment, a circle of grooves 30 is fully distributed on the surface of the shield ring 23, the depth of the grooves 30 is 1mm to 2mm, the distance between the grooves 30 is 2mm to 10mm, the inclination angle of the side wall of the groove 30 is 30 degrees to 60 degrees, and the right angle of each groove 30 is processed into an arc angle by sand blasting.
The grooves in the surface of the shield ring 23 may also be intersecting grooves (not shown).
As shown in fig. 5 and 6, the clamp ring 4 of the present embodiment is provided with a plurality of screw holes 41 at the outer ring position for being fixed on the tray 3. A plurality of brackets 42 are provided at inner circumferential positions of the clamp ring 4 for receiving the wafer 10. The inner side of the gripper ring 4 is provided with a lower recess 43 adjacent to the bracket 42.
As shown in FIG. 7, the surface of the concave part 43 of the clamp ring 4 can be fully distributed with cross grooves 30, the depth of each groove 30 is 1 mm-2 mm, the inclination angle of the side wall of each groove 30 is 30-60 degrees, and the right angle of each groove 30 is processed into an arc angle through sand blasting.
As shown in fig. 8, which is a perspective view of the target fixing device 5 of the present embodiment, the target fixing device 5 is bowl-shaped, the surface of the target fixing device is fully distributed with intersecting grooves 30, the depth of the grooves 30 is 1mm to 2mm, the distance between the grooves 30 is 2mm to 10mm, the inclination angle of the side wall of the groove 30 is 30 ° to 60 °, and the right angle of each groove 30 is processed into an arc angle by sand blasting.
In summary, the shield ring is disposed at the bottom of the shield and above the wafer, so that the sputtering deposition reaction chamber can block the material falling vertically during the sputtering deposition reaction process, and prevent the material from directly contaminating the bottom of the chamber from the bottom of the shield. With the increase of the equipment process, the materials deposited on the shield ring 23, the clamp ring 4 and the target fixing device 5 are accumulated continuously, the position where the peeling starts to occur at first is the position where the material stress is maximum, such as the position of some turning points, and the material stress increases the corresponding deformation of the materials, thereby reducing the adhesive force. By arranging the grooves 30 on the surfaces of the shield ring 23, the clamp ring 4 and the target fixing device 5, the design of the grooves 30 reserves the thermal deformation space on the surface of the material besides increasing the adhesion area of the material, and reduces the peeling caused by stress. Therefore, the working condition service cycle of the shield 2, the clamp ring 4 and the target fixing device 5 can be prolonged, namely, the service life can be increased by 15-30%, for example, the existing equipment needs to be maintained every 1700 hours, and the reaction cavity equipment provided by the invention is maintained every 2000 hours, so that the cleaning and maintenance frequency of the equipment is reduced, the service efficiency of the equipment is improved, and the production cost is reduced.
The above description is only a preferred embodiment of the present invention, and therefore should not be taken as limiting the scope of the invention, which is defined by the appended claims and their equivalents and modifications within the scope of the description.
Claims (8)
1. The utility model provides a reaction chamber body of sputter deposition, including a cavity, and locate guard shield, tray, anchor clamps ring and target fixing device in the cavity, its characterized in that:
the bottom of the shield is provided with a shield ring, the inner side area of the shield ring is hollow, and the surface of the shield ring is provided with a plurality of grooves;
the fixture ring is located below the shield ring, the fixture ring is used for placing a wafer, the tray is located below the fixture ring and used for fixedly supporting the fixture ring, the target fixing device is arranged in the shield and located above the shield ring, the target fixing device is used for installing and fixing a target, and materials after target reaction are deposited on the wafer through the inner side area of the shield ring.
2. The sputter deposition reaction chamber of claim 1, wherein: the surface of the shield ring is fully distributed with a circle of grooves, the depth of each groove is 1 mm-2 mm, the distance between every two grooves is 2 mm-10 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting.
3. The sputter deposition reaction chamber of claim 1, wherein: the cavity is including upper cover and chamber body, the guard shield is including interior guard shield, outer guard shield and above-mentioned guard shield ring, outer guard shield upper end is arranged in chamber body upper portion, and interior guard shield upper end is arranged in outer guard shield upper portion, will again the upper cover is arranged in on the outer guard shield, makes upper cover, interior guard shield, outer guard shield and chamber body form confined reaction chamber.
4. The sputter deposition reaction chamber of claim 3, wherein: the lower end of the outer protective cover extends inwards and upwards to form a bottom groove, the inner protective cover body is arranged in the outer protective cover, and the lower end of the inner protective cover is positioned in the bottom groove.
5. The sputter deposition reaction chamber of claim 4, wherein: the bottom of the periphery of the shield ring is provided with a groove, so that the shield ring can be arranged on one groove edge of the bottom groove.
6. The sputter deposition reaction chamber of claim 1, wherein: the outer ring of the clamp ring is provided with a plurality of screw holes for mounting and fixing on the tray; and a plurality of brackets are arranged at the inner ring position of the clamp ring and used for placing the wafer.
7. The sputter deposition reaction chamber of claim 1, wherein: the inner side of the clamp ring is provided with a concave part close to the bracket, the surface of the concave part is fully distributed with crossed grooves, the depth of each groove is 1 mm-2 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting.
8. The sputter deposition reaction chamber of claim 1, wherein: the target fixing device is bowl-shaped, the surfaces of the target fixing device are fully distributed with crossed grooves, the depth of each groove is 1 mm-2 mm, the distance between every two grooves is 2 mm-10 mm, the inclination angle of the side wall of each groove is 30-60 degrees, and the right angle of each groove is processed into an arc angle through sand blasting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110249062.6A CN112877655A (en) | 2021-03-08 | 2021-03-08 | Reaction cavity for sputtering deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110249062.6A CN112877655A (en) | 2021-03-08 | 2021-03-08 | Reaction cavity for sputtering deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112877655A true CN112877655A (en) | 2021-06-01 |
Family
ID=76055653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110249062.6A Pending CN112877655A (en) | 2021-03-08 | 2021-03-08 | Reaction cavity for sputtering deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112877655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114672780A (en) * | 2022-03-22 | 2022-06-28 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05106020A (en) * | 1990-03-02 | 1993-04-27 | Applied Materials Inc | Shield preparation for reducing fine particle in physical vapor deposition room |
| EP0836219A2 (en) * | 1996-10-08 | 1998-04-15 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
| JP2010129770A (en) * | 2008-11-27 | 2010-06-10 | Elpida Memory Inc | Semiconductor device and method for manufacturing the same |
| US20100144154A1 (en) * | 2008-05-12 | 2010-06-10 | Nec Electronics Corporation | Method of manufacturing semiconductor device, and etching apparatus |
| US20110159211A1 (en) * | 2009-12-31 | 2011-06-30 | Applied Materials, Inc. | Shadow ring for modifying wafer edge and bevel deposition |
| US20120103257A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Deposition ring and electrostatic chuck for physical vapor deposition chamber |
| JP2014022457A (en) * | 2012-07-13 | 2014-02-03 | Ps4 Luxco S A R L | Semiconductor device and manufacturing method of the same |
| TW201428125A (en) * | 2013-01-11 | 2014-07-16 | Shih Her Technologies Inc | Reaction chamber structure of semiconductor sputtering equipment |
| TWM566213U (en) * | 2018-04-03 | 2018-09-01 | 力鼎精密股份有限公司 | Wafer shield for physical vapor deposition coating |
| CN210916238U (en) * | 2019-11-26 | 2020-07-03 | 杭州福照光电有限公司 | Magnetron sputtering target gun shield |
| CN111793786A (en) * | 2020-06-23 | 2020-10-20 | 重庆中科渝芯电子有限公司 | Shielding ring device for preventing sticking of physical vapor deposition equipment |
| CN214736052U (en) * | 2021-03-08 | 2021-11-16 | 泰杋科技股份有限公司 | Reaction cavity for sputtering deposition |
-
2021
- 2021-03-08 CN CN202110249062.6A patent/CN112877655A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05106020A (en) * | 1990-03-02 | 1993-04-27 | Applied Materials Inc | Shield preparation for reducing fine particle in physical vapor deposition room |
| EP0836219A2 (en) * | 1996-10-08 | 1998-04-15 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
| US20100144154A1 (en) * | 2008-05-12 | 2010-06-10 | Nec Electronics Corporation | Method of manufacturing semiconductor device, and etching apparatus |
| JP2010129770A (en) * | 2008-11-27 | 2010-06-10 | Elpida Memory Inc | Semiconductor device and method for manufacturing the same |
| US20110159211A1 (en) * | 2009-12-31 | 2011-06-30 | Applied Materials, Inc. | Shadow ring for modifying wafer edge and bevel deposition |
| US20120103257A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Deposition ring and electrostatic chuck for physical vapor deposition chamber |
| JP2014022457A (en) * | 2012-07-13 | 2014-02-03 | Ps4 Luxco S A R L | Semiconductor device and manufacturing method of the same |
| TW201428125A (en) * | 2013-01-11 | 2014-07-16 | Shih Her Technologies Inc | Reaction chamber structure of semiconductor sputtering equipment |
| TWM566213U (en) * | 2018-04-03 | 2018-09-01 | 力鼎精密股份有限公司 | Wafer shield for physical vapor deposition coating |
| CN210916238U (en) * | 2019-11-26 | 2020-07-03 | 杭州福照光电有限公司 | Magnetron sputtering target gun shield |
| CN111793786A (en) * | 2020-06-23 | 2020-10-20 | 重庆中科渝芯电子有限公司 | Shielding ring device for preventing sticking of physical vapor deposition equipment |
| CN214736052U (en) * | 2021-03-08 | 2021-11-16 | 泰杋科技股份有限公司 | Reaction cavity for sputtering deposition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114672780A (en) * | 2022-03-22 | 2022-06-28 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
| CN114672780B (en) * | 2022-03-22 | 2023-09-19 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6699375B1 (en) | Method of extending process kit consumable recycling life | |
| JP5371785B2 (en) | RF shutter | |
| US6162336A (en) | Clamping ring design to reduce wafer sticking problem in metal deposition | |
| WO2012057987A2 (en) | Deposition ring and electrostatic chuck for physical vapor deposition chamber | |
| CN214736052U (en) | Reaction cavity for sputtering deposition | |
| CN112877655A (en) | Reaction cavity for sputtering deposition | |
| US6998033B2 (en) | Sputtering cathode adapter assembly and method | |
| KR19980070371A (en) | Back-sputtering shield | |
| CN112501577B (en) | Wafer fixing ring and preparation method and application thereof | |
| US20040245098A1 (en) | Method of fabricating a shield | |
| KR101082866B1 (en) | Film forming mask and mask assembly jig | |
| CN112864083A (en) | Wafer clamp of sputtering deposition equipment | |
| US20040149226A1 (en) | Substrate clamp ring with removable contract pads | |
| US20040245089A1 (en) | Method of surface treating a processing element in a processing system | |
| CN214378384U (en) | Wafer clamp of sputtering deposition equipment | |
| CN213163601U (en) | Electron beam welding tool for sputtering ring body and fixing assembly | |
| US7306707B2 (en) | Adaptable processing element for a processing system and a method of making the same | |
| CN215628263U (en) | PVD tray structure | |
| JP2023523434A (en) | Method and apparatus for reducing defects in preclean chamber | |
| CN220952025U (en) | Deposition ring and thin film deposition apparatus | |
| JP2011168894A (en) | Mask for film-deposition and method for cleaning the same | |
| TWI470104B (en) | Structure of reaction chamber of semiconductor sputtering equipment | |
| CN220597624U (en) | PVD work piece that physical vapor deposition semiconductor device coating film was used | |
| CN212925157U (en) | 8-inch physical vapor deposition tantalum cavity heating base protection accessory | |
| US6682635B2 (en) | Cathodic sputtering chamber for applying material to the surface of a semiconductor wafer located therein |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210601 |